JPH10163292A - Treating device - Google Patents

Treating device

Info

Publication number
JPH10163292A
JPH10163292A JP8322751A JP32275196A JPH10163292A JP H10163292 A JPH10163292 A JP H10163292A JP 8322751 A JP8322751 A JP 8322751A JP 32275196 A JP32275196 A JP 32275196A JP H10163292 A JPH10163292 A JP H10163292A
Authority
JP
Japan
Prior art keywords
substrate
transfer
semiconductor substrate
processing
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8322751A
Other languages
Japanese (ja)
Inventor
Manabu Matsuo
学 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Canon Marketing Japan Inc
Original Assignee
Canon Inc
Canon Marketing Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc, Canon Marketing Japan Inc filed Critical Canon Inc
Priority to JP8322751A priority Critical patent/JPH10163292A/en
Publication of JPH10163292A publication Critical patent/JPH10163292A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075Handling workpieces outside exposure position, e.g. SMIF box

Abstract

PROBLEM TO BE SOLVED: To provide a treating device which performs a series of treatment consisting of the application, exposure, and development of a photosensitive agent on a semiconductor substrate used for the manufacture of a semiconductor element, while the substrate is automatically transported and requires a small space factor in a clean room. SOLUTION: Substrate containers 5 each of which houses a plurality of semiconductor devices are placed in a line in a substrate housing section 1 which is elongated in one direction, and a first transportation path 6 is extended in a straight line along the section 1. A first transporting device 8, an application and development treating device 2, and an exposure treating device 3 are respectively provided on the first transporting path 6, adjacently to the side of the path 6 on the opposite side of the substrate housing section 1, and adjacently to one end of the path 6. The first transporting device 8 takes out the semiconductor substrates from the containers 5, and transports the substrates between the substrate housing section 1 and the application and development treating device 2, between the section 1 and the exposure treating device 3, and between the treating devices 2 and 3 in accordance with the progress of treatment.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子の製造
に使用される半導体基板の感光剤塗布、露光および現像
という、この一連の処理を半導体基板の自動搬送にて行
う処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus for performing a series of processes of applying a photosensitive agent, exposing and developing a semiconductor substrate used for manufacturing a semiconductor device by automatically transporting the semiconductor substrate.

【0002】[0002]

【従来の技術】一般に、半導体基板上に半導体素子を多
数同時に作り込む方法としてフォトリソグラフィーが応
用される。このフォトリソグラフィーでは、例えば集積
回路のパターンに応じて光を通す透明な部分(ポジ部)
と光を通さない不透明な部分(ネガ部)を写真操作で作
製してなるマスクを、感光剤が塗布された半導体基板上
に密着させるかあるいは少し離して位置合わせをした後
に、半導体基板に紫外線をマスクを介して露光する。ま
た、感光剤は感光すると現像液に溶けなくなる性質を持
っている。従って、マスクを通して露光された半導体基
板上の感光剤が現像液につけられると、マスクの透明な
部分(ポジ部)に対応する感光剤のみが半導体基板上に
残り、集積回路のパターンと同様の感光剤の膜が半導体
基板上に作られる。このように残った感光剤の膜を乾燥
して硬化させ(いわゆるベーキング処理)、次の工程の
処理に耐え得るように感光剤の膜の密着性や強度を増
す。半導体基板上に形成される半導体素子パターンの寸
法精度は、フォトリソグラフィーによる転写精度に依存
するので、フォトリソグラフィーは半導体素子の製造に
おいて極めて重要な工程である。
2. Description of the Related Art In general, photolithography is applied as a method for simultaneously forming a large number of semiconductor elements on a semiconductor substrate. In this photolithography, for example, a transparent portion (positive portion) that transmits light according to the pattern of an integrated circuit
After a mask made by photographic operation of an opaque part (negative part) that does not allow light to pass through, the mask is brought into close contact with the semiconductor substrate coated with the photosensitizer, or after a slight distance alignment, the ultraviolet light is applied to the semiconductor substrate. Is exposed through a mask. In addition, the photosensitive agent has a property of being insoluble in a developer when exposed to light. Therefore, when the photosensitive agent on the semiconductor substrate exposed through the mask is applied to the developer, only the photosensitive agent corresponding to the transparent portion (positive portion) of the mask remains on the semiconductor substrate, and the photosensitive agent similar to the pattern of the integrated circuit is exposed. A film of the agent is formed on the semiconductor substrate. The remaining photosensitive agent film is dried and cured (so-called baking treatment), and the adhesion and strength of the photosensitive agent film are increased so as to withstand the processing of the next step. Since the dimensional accuracy of a semiconductor element pattern formed on a semiconductor substrate depends on the transfer accuracy by photolithography, photolithography is a very important step in the manufacture of semiconductor elements.

【0003】上述した半導体素子を製造するためのフォ
トリソグラフィー工程は、自動搬送装置を用いた処理装
置で行われており、従来の処理装置の一例を図2に示
す。従来の処理装置では、図2に示すように、1方向に
延びる基板収納部101上に、複数の半導体基板を収納
した複数の基板収納容器105が基板収納部101の長
手方向に1列に並べて載置されており、この基板収納部
101に沿って一直線に第1の搬送路106が延びてい
る。また、基板収納部101の、第1の搬送路106側
とは反対側の側部に沿って基板搬送路118が一直線に
延びている。基板搬送路118上には自動搬送装置(不
図示)が配置されていて、基板収納部101と、図示さ
れていない他の装置や他の収納部との間で基板収納容器
105を搬送する。第1の搬送路106上には第1の搬
送装置108が配置されていて、命令により目的の基板
収納容器105に移動し、基板収納容器105内の半導
体基板を取り出す。第1の搬送路106の、基板収納部
101側とは反対側の側部には、第1の処理装置であ
る、塗布および現像処理装置102が隣接して設置され
ている。
The photolithography process for manufacturing the above-described semiconductor device is performed by a processing apparatus using an automatic transfer device. An example of a conventional processing apparatus is shown in FIG. In the conventional processing apparatus, as shown in FIG. 2, a plurality of substrate storage containers 105 storing a plurality of semiconductor substrates are arranged in a line in a longitudinal direction of the substrate storage unit 101 on a substrate storage unit 101 extending in one direction. The first transport path 106 extends in a straight line along the substrate storage unit 101. Further, a substrate transport path 118 extends in a straight line along the side of the substrate storage unit 101 opposite to the first transport path 106 side. An automatic transfer device (not shown) is disposed on the substrate transfer path 118, and transfers the substrate storage container 105 between the substrate storage unit 101 and another device or another storage unit (not shown). A first transfer device 108 is disposed on the first transfer path 106, moves to a target substrate storage container 105 by a command, and takes out the semiconductor substrate in the substrate storage container 105. A coating and developing processing apparatus 102, which is a first processing apparatus, is provided adjacent to a side of the first transport path 106 opposite to the substrate storage unit 101 side.

【0004】さらに、塗布および現像処理装置102の
内部について説明すると、塗布および現像処理装置10
2内部を2つのエリアに区分けするように、第2の搬送
路107が第1の搬送路106に対して直交する方向に
一直線に延びている。一方のエリアには複数のスピン処
理部110が第2の搬送路107と平行な方向に1列に
並べられて配置され、もう一方のエリアには複数の熱処
理部111が第2の搬送路107と平行な方向に1列に
並べられて設置されている。第2の搬送路107上には
第2の搬送装置109が配置されており、この第2の搬
送装置109は、第2の搬送路107と第1の搬送路1
06とが直交する位置で第1の搬送装置108と半導体
基板の授受を行い、第2の搬送路107を移動すること
によって塗布および現像処理装置102内で半導体基板
を搬送する。
[0004] Further, the inside of the coating and developing apparatus 102 will be described.
The second transport path 107 extends straight in a direction orthogonal to the first transport path 106 so as to divide the inside of the printer 2 into two areas. In one area, a plurality of spin processing units 110 are arranged in a row in a direction parallel to the second transport path 107, and in the other area, a plurality of heat treatment units 111 are provided. Are arranged in a row in a direction parallel to On the second transport path 107, a second transport apparatus 109 is disposed, and the second transport apparatus 109 is configured to include the second transport path 107 and the first transport path 1
The semiconductor substrate is exchanged with the first transfer device 108 at a position where the reference numeral 06 is orthogonal, and the semiconductor substrate is transferred within the coating and developing treatment device 102 by moving along the second transfer path 107.

【0005】上述した第2の搬送路107の、第1の搬
送路106とは反対側の端部には、第4の搬送装置12
1が備えられた受渡しステージ120を介して、第2の
処理装置である露光処理装置103が配置されている。
[0005] At the end of the second transport path 107 opposite to the first transport path 106, a fourth transport device 12 is provided.
An exposure processing apparatus 103, which is a second processing apparatus, is disposed via a delivery stage 120 provided with the first processing apparatus 1.

【0006】露光処理装置103について説明すると、
受渡しステージ120と接する露光処理装置103の側
面には基板受渡し口(不図示)が設けられ、この基板受
渡し口がある露光処理装置103の側面は露光処理装置
正面116と直交している。露光処理装置正面116は
操作スイッチなどがある操作面であり、この露光処理装
置正面116にマスク受渡し口(不図示)がある。露光
処理装置103の内部にはマスク受渡し部117が設置
されており、従来では、マスクが人手の作業によってマ
スク受渡し口を通してマスク受渡し部117へ搬入、あ
るいはマスク受渡し部117から搬出されている。露光
処理装置103の内部で基板受渡し口に近い位置には基
板受入れ部112と基板払出し部113とが配置され、
露光処理装置103のほぼ中央の位置に露光ステージ1
15が設置されている。基板受入れ部112から露光ス
テージ115への半導体基板の搬送および、露光ステー
ジ115から基板払出し部113への半導体基板の搬送
をするための第3の搬送装置114が露光処理装置10
3内部に配置されている。
The exposure processing apparatus 103 will be described.
A substrate delivery port (not shown) is provided on a side surface of the exposure processing apparatus 103 that is in contact with the delivery stage 120, and a side surface of the exposure processing apparatus 103 having the substrate delivery port is orthogonal to the front face 116 of the exposure processing apparatus. The front face of the exposure processing apparatus 116 is an operation surface having operation switches and the like. The front face of the exposure processing apparatus 116 has a mask delivery port (not shown). A mask delivery unit 117 is provided inside the exposure processing apparatus 103. Conventionally, a mask is carried into or out of the mask delivery unit 117 through a mask delivery port by manual operation. A substrate receiving unit 112 and a substrate unloading unit 113 are arranged at a position near the substrate transfer port inside the exposure processing apparatus 103,
An exposure stage 1 is provided at a substantially central position of the exposure processing apparatus 103.
15 are installed. The third transfer device 114 for transferring the semiconductor substrate from the substrate receiving unit 112 to the exposure stage 115 and for transferring the semiconductor substrate from the exposure stage 115 to the substrate unloading unit 113 includes the exposure processing apparatus 10.
3 are arranged inside.

【0007】従来の技術による処理装置の各搬送装置間
での半導体基板の受渡し方法としては、あらかじめ各搬
送装置間での受渡し場所に半導体基板の仮置き台を配置
し、受け渡す側の搬送装置が半導体基板を一時的に仮置
き台に置き、受け取る側の搬送装置が仮置き台の半導体
基板を取る動作が行われる。
As a method of transferring a semiconductor substrate between transfer devices of a processing apparatus according to the prior art, a temporary placing table for semiconductor substrates is previously arranged at a transfer place between transfer devices, and a transfer device on the transfer side is used. Temporarily places the semiconductor substrate on the temporary storage table, and the transfer device on the receiving side takes the semiconductor substrate on the temporary storage table.

【0008】ここで第1〜第4の各搬送装置の各々の上
下方向の移動範囲について説明する。例えば、基板収納
容器105内に直径200mmのシリコン基板が25枚
重なるように収納され、1番上の基板と上から25枚目
の基板との上下差の距離が152.4mmであり、第2
の搬送装置109との基板の受渡しのため、第1の搬送
装置108の上下方向の移動範囲は200mm以下とし
た。第2の搬送装置109では、スピン処理部110お
よび熱処理部111の位置が、第1の搬送装置108と
第2の搬送装置109との基板の受渡し位置よりも高く
してある。また、複数の熱処理プレートを積層状に配置
して構成された熱処理部111との基板の授受のため
に、第2の搬送装置109の上下方向の移動範囲は第1
の搬送装置108との基板受渡し位置から上方向へ50
0〜700mm必要とされる。第2の搬送装置109は
上下方向の移動範囲の最下端の位置で受渡しステージ1
20に基板を載置したり、受渡しステージ120に載置
された基板を受け取ったりする。露光ステージ115と
同等の高さに位置する基板受入れ部112および基板払
出し部113は、受渡しステージ120から400〜5
00mm下がる位置になるので、受渡しステージ120
から基板受入れ部112への搬送および、基板払出し部
113から受渡しステージ120への搬送を行うための
第4の搬送装置121は、上下方向の移動範囲が400
〜500mmになる。
Here, the vertical movement range of each of the first to fourth transfer devices will be described. For example, 25 silicon substrates each having a diameter of 200 mm are stored in the substrate storage container 105 so as to overlap with each other, and the vertical difference between the top substrate and the 25th substrate from the top is 152.4 mm, and the second substrate is the second.
In order to transfer the substrate to and from the transfer device 109, the vertical movement range of the first transfer device 108 was set to 200 mm or less. In the second transfer device 109, the positions of the spin processing unit 110 and the heat treatment unit 111 are higher than the transfer positions of the substrates between the first transfer device 108 and the second transfer device 109. In addition, in order to transfer a substrate to and from the heat treatment unit 111 configured by arranging a plurality of heat treatment plates in a stacked manner, the vertical moving range of the second transfer device 109 is the first movement range.
50 upward from the substrate transfer position with the transfer device 108
0-700 mm is required. The second transfer device 109 is located at the lowermost position of the vertical movement range,
The substrate is placed on the transfer stage 20 and the substrate placed on the delivery stage 120 is received. The substrate receiving unit 112 and the substrate unloading unit 113 located at the same height as the exposure stage 115
00mm lower than the delivery stage 120
The fourth transfer device 121 for transferring from the substrate to the substrate receiving unit 112 and transferring from the substrate unloading unit 113 to the delivery stage 120 has a vertical movement range of 400
500500 mm.

【0009】次に、上述のように構成された従来の処理
装置の動作について説明する。複数の半導体基板を収め
た基板収納容器105が、基板搬送路118上を移動す
る基板収納容器搬送装置(不図示)により搬送されて基
板収納部101に載置される。第1の搬送装置108が
あらかじめ設定された条件に従い、基板収納部101の
基板収納容器105から半導体基板を取り出して塗布お
よび現像処理装置102へ搬送し、感光性の樹脂を塗布
するために塗布および現像処理装置102内部の第2の
搬送装置109へ半導体基板を受け渡す。半導体基板を
受け取った第2の搬送装置109は、半導体基板をスピ
ン処理部110へ搬送する。スピン処理部110で感光
剤の塗布処理を終えた半導体基板は、第2の搬送装置1
09によってスピン処理部110から熱処理部111へ
搬送され、熱処理部111で半導体基板の露光前ベーキ
ングが行われ、半導体基板上の感光剤の膜が安定化され
る。露光前ベーキングを終えた半導体基板は第2の搬送
装置109によって熱処理部111から受渡しステージ
120へ搬送され、受渡しステージ120に載置され
る。受渡しステージ120上の半導体基板は、第4の搬
送装置121によって露光処理装置103内部の基板受
入れ部112へ搬送されて基板受入れ部112上に載置
される。基板受入れ部112上の半導体基板は、露光処
理装置103内部の第3の搬送装置114によって露光
ステージ115へ搬送されて露光ステージ115でマス
クを用いて露光される。露光された半導体基板は第3の
搬送装置114によって、露光ステージ115から基板
払出し部113へ搬送されて基板払出し部113上に載
置される。基板払出し部113上の半導体基板は、第4
の搬送装置121によって受渡しステージ120へ搬送
されて受渡しステージ120上に載置され、受渡しステ
ージ120上の半導体基板は第2の搬送装置109によ
って熱処理部111へ搬送される。熱処理部111で
は、半導体基板の露光後ベーキングが行われ、露光後の
感光剤が安定化される。露光後ベーキングを終えた半導
体基板は、第2の搬送装置109によって熱処理部11
1からスピン処理部110へ搬送され、スピン処理部1
10で現像される。現像された半導体基板は、第2の搬
送装置109によってスピン処理部110から第1の搬
送装置108へ搬送され、第1の搬送装置108に受け
渡される。第1の搬送装置108は受け渡された半導体
基板を、基板収納部101にある基板収納容器105内
部へ戻す。
Next, the operation of the conventional processing apparatus configured as described above will be described. The substrate storage container 105 storing a plurality of semiconductor substrates is transferred by a substrate storage container transfer device (not shown) moving on the substrate transfer path 118 and is placed on the substrate storage unit 101. The first transfer device 108 takes out the semiconductor substrate from the substrate storage container 105 of the substrate storage unit 101 according to a preset condition, and transports the semiconductor substrate to the coating and developing processing device 102 to apply the photosensitive resin. The semiconductor substrate is transferred to the second transfer device 109 inside the development processing device 102. The second transfer device 109 that has received the semiconductor substrate transfers the semiconductor substrate to the spin processing unit 110. The semiconductor substrate that has been subjected to the photosensitive agent application processing in the spin processing unit 110 is transferred to the second transport device 1
In step 09, the semiconductor substrate is transported from the spin processing unit 110 to the heat treatment unit 111, where the pre-exposure baking of the semiconductor substrate is performed in the heat treatment unit 111, thereby stabilizing the photosensitive agent film on the semiconductor substrate. The semiconductor substrate that has been subjected to the pre-exposure baking is transported from the heat treatment section 111 to the delivery stage 120 by the second transport device 109, and is placed on the delivery stage 120. The semiconductor substrate on the transfer stage 120 is transferred by the fourth transfer device 121 to the substrate receiving portion 112 inside the exposure processing device 103 and is placed on the substrate receiving portion 112. The semiconductor substrate on the substrate receiving unit 112 is transported to the exposure stage 115 by the third transport unit 114 inside the exposure processing apparatus 103, and is exposed on the exposure stage 115 using a mask. The exposed semiconductor substrate is transported from the exposure stage 115 to the substrate discharging unit 113 by the third transfer device 114 and placed on the substrate discharging unit 113. The semiconductor substrate on the substrate payout unit 113 is
The semiconductor substrate on the transfer stage 120 is transferred to the heat treatment unit 111 by the second transfer device 109. In the heat treatment section 111, post-exposure baking of the semiconductor substrate is performed, and the photosensitizer after exposure is stabilized. The semiconductor substrate that has been subjected to the post-exposure baking is subjected to the heat treatment section 11 by the second transfer device 109.
1 to the spin processing unit 110,
Developed at 10. The developed semiconductor substrate is transported from the spin processing unit 110 to the first transport device 108 by the second transport device 109, and is transferred to the first transport device 108. The first transfer device 108 returns the transferred semiconductor substrate to the inside of the substrate storage container 105 in the substrate storage unit 101.

【0010】[0010]

【発明が解決しようとする課題】しかしながら、複数の
搬送装置を用いて半導体素子が製造される従来の処理装
置では、半導体素子の製造に用いられる半導体基板が大
型化されると、大型化された半導体基板を搭載するため
に各搬送装置が大型化し、それに従い、半導体基板が搬
送される各搬送路の専有面積が増大し、その結果、クリ
ーンルーム内で処理装置の専有面積が増大し、処理装置
のコストが増大するという問題がある。
However, in a conventional processing apparatus in which a semiconductor device is manufactured using a plurality of transfer devices, the size of a semiconductor substrate used for manufacturing the semiconductor device is increased. Each transfer device becomes larger in size for mounting the semiconductor substrate, and accordingly, the occupied area of each transfer path through which the semiconductor substrate is transferred is increased. As a result, the occupied area of the processing device is increased in the clean room, and the processing device is increased. However, there is a problem that the cost increases.

【0011】また、従来の処理装置では露光ステージで
用いられるマスクが人手の作業あるいは機械操作により
マスク受渡し部で授受されているが、今後はマスクの自
動搬送も検討され、通常、マスクの受渡し口がある露光
処理装置正面の前方に露光処理装置正面に沿って一直線
に延びるマスク搬送路(図2の符号119参照)が設け
られる。しかし、マスク搬送路の搬送経路は基板搬送路
の搬送経路と直交状態になるので、マスクの搬送装置と
基板収納容器の搬送装置とを1つの搬送装置で共用する
ためには、直線移動する搬送装置だけでは搬送路を共用
できなくなってしまう。各処理装置のレイアウトに合わ
せて搬送装置を直角に移動させたりする搬送路を組む
と、半導体基板の搬送手段のコストが増加し、工場内で
搬送路の専有面積が増大することがある。
In a conventional processing apparatus, a mask used in an exposure stage is transferred by a mask transfer unit by manual operation or mechanical operation. In the future, automatic transfer of a mask will be considered. A mask transport path (see reference numeral 119 in FIG. 2) extending straight along the front of the exposure processing apparatus is provided in front of a certain front of the exposure processing apparatus. However, since the transfer path of the mask transfer path is orthogonal to the transfer path of the substrate transfer path, in order to share the transfer apparatus for the mask and the transfer apparatus for the substrate storage container with one transfer apparatus, the transfer path that moves linearly The transport path cannot be shared by the apparatus alone. If a transfer path for moving the transfer apparatus at a right angle according to the layout of each processing apparatus is formed, the cost of the semiconductor substrate transfer means increases, and the occupied area of the transfer path in a factory may increase.

【0012】本発明の目的は、上述した従来技術の問題
に鑑み、半導体素子の製造に用いられる半導体基板が大
型化された場合に、クリーンルーム内で専有面積がより
小さい処理装置を提供することにある。
An object of the present invention is to provide a processing apparatus that occupies a smaller area in a clean room when a semiconductor substrate used for manufacturing a semiconductor device is increased in size in view of the above-mentioned problems in the prior art. is there.

【0013】また、上記目的に加えて、処理装置で今後
検討される、露光に用いるマスクの自動搬送の実施にお
いても、クリーンルーム内で専有面積がより小さい処理
装置を提供することにある。
Another object of the present invention is to provide a processing apparatus having a smaller occupied area in a clean room in the automatic conveyance of a mask used for exposure, which will be studied in the processing apparatus in the future.

【0014】[0014]

【課題を解決するための手段】上記目的を達成するため
の本発明は、複数の半導体基板が収納され、1方向に延
びる基板収納部と、該基板収納部に沿って一直線に延び
る第1の搬送路と、該第1の搬送路上を移動する第1の
搬送装置と、前記第1の搬送路の、前記基板収納部側と
は反対側の側部に隣接して配置され、前記第1の搬送装
置により搬送される半導体基板に対して処理を行う第1
の処理装置と、前記第1の搬送路の端部に隣接して配置
され、前記第1の処理装置が前記第1の搬送装置と半導
体基板の受渡しする位置と異なる高さに基板受渡し口を
備えて、前記第1の搬送装置により搬送される半導体基
板に対して処理を行う第2の処理装置とを有し、前記第
1の搬送装置は、前記基板収納部と前記第1の処理装置
間での半導体基板の搬送、前記基板収納部と前記第2の
処理装置間での半導体基板の搬送、第1および第2の処
理装置間での半導体基板の搬送を行うように構成された
ことを特徴とする。
SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a substrate accommodating portion accommodating a plurality of semiconductor substrates and extending in one direction, and a first linear extending along the substrate accommodating portion. A transport path, a first transport device that moves on the first transport path, and a first transport path that is disposed adjacent to a side of the first transport path opposite to the substrate storage unit side; That performs processing on semiconductor substrates transported by a transport device
And a substrate transfer port which is disposed adjacent to an end of the first transfer path and has a height different from a position at which the first processing apparatus transfers the semiconductor substrate with the first transfer apparatus. And a second processing device for performing processing on the semiconductor substrate transferred by the first transfer device, wherein the first transfer device includes the substrate storage unit and the first processing device. Transfer of the semiconductor substrate between the first and second processing units, transfer of the semiconductor substrate between the substrate storage unit and the second processing unit, and transfer of the semiconductor substrate between the first and second processing units. It is characterized by.

【0015】また、前記第1の処理装置は、前記第1の
搬送装置と基板の授受を行うと共に前記第1の処理装置
内で半導体基板の自動搬送を行う第2の搬送装置を有
し、感光剤を塗布する処理、露光された半導体基板を現
像する処理および、半導体基板の熱処理を行うものであ
り、前記第2の処理装置は、マスクを用いて半導体基板
の露光を行うものであることが好ましい。
Further, the first processing apparatus has a second transfer apparatus for transferring a substrate to and from the first transfer apparatus and for automatically transferring a semiconductor substrate in the first processing apparatus. A process of applying a photosensitive agent, a process of developing the exposed semiconductor substrate, and a heat treatment of the semiconductor substrate, wherein the second processing apparatus performs exposure of the semiconductor substrate using a mask. Is preferred.

【0016】さらに、前記第1の搬送装置は、必要に応
じ、前記第2の搬送装置の動作とは関係なく前記基板収
納部と前記第2の処理装置との間で半導体基板の搬送を
行うことが好ましい。
Further, the first transfer device transfers the semiconductor substrate between the substrate storage unit and the second processing device, if necessary, independently of the operation of the second transfer device. Is preferred.

【0017】さらに、前記第1の搬送装置は、前記第1
または第2の処理装置のいずれか一方で、機能維持のた
めに人的なあるいは自動化された回復処理を行う時およ
び、機能に何らかの障害が発生した時に、半導体基板に
対しての処理機能が失われていない一方の装置と前記基
板収納部との間で半導体基板の搬送を行うことが好まし
い。
Further, the first transporting device is provided with the first transporting device.
Alternatively, the processing function for the semiconductor substrate is lost when one of the second processing devices performs a human or automated recovery process for maintaining the function, and when a failure occurs in the function. It is preferable that the semiconductor substrate is transported between one of the devices that has not been moved and the substrate storage unit.

【0018】さらに、前記基板収納部は、他の工程の処
理装置との間で半導体基板が搬送されるために、前記基
板収納部の、前記第1の搬送路側とは反対側の側部に沿
って一直線に延びる基板搬送路を有し、前記第2の処理
装置は、マスク受渡し口を備え、該マスク受渡し口が設
けられた前記第2の処理装置の側面に沿って一直線に延
びるマスク搬送路を有し、前記基板搬送路と前記マスク
搬送路とが平行もしくは、同一直線になるように構成さ
れたことが好ましい。
Further, since the semiconductor substrate is transported to and from the processing apparatus in another process, the substrate storage section is provided on a side of the substrate storage section opposite to the first transfer path. The second processing apparatus includes a mask transfer port, and the mask transfer port extends linearly along a side surface of the second processing apparatus provided with the mask transfer port. It is preferable that the substrate transport path and the mask transport path are configured to be parallel or co-linear with each other.

【0019】上記のとおりの発明では、第1および第2
処理装置がそれぞれ、基板収納部に沿って一直線に延び
る第1の搬送路に隣接して配置され、第1の搬送路上を
移動する第1の搬送装置のみによって基板収納部と第1
の処理装置の間、基板収納部と第2の処理装置の間、第
1および第2の処理装置の間での半導体基板の搬送が行
われる。従って、第1の搬送装置と第1の処理装置との
半導体基板の受渡し位置が第2の処理装置の基板受渡し
口と高さが異なっていても、第1の搬送装置に、上下方
向に半導体基板を移動させる機能を持たせることで、第
1および第2の処理装置間で半導体基板の搬送が可能に
なる。
In the invention as described above, the first and the second
Each of the processing apparatuses is disposed adjacent to a first transfer path extending straight along the substrate storage section, and the first storage apparatus moves on the first transfer path and the substrate storage section and the first processing apparatus are respectively disposed.
The transfer of the semiconductor substrate is performed between the first processing device, the substrate storage section and the second processing device, and between the first and second processing devices. Therefore, even if the transfer position of the semiconductor substrate between the first transfer device and the first processing device is different from the height of the substrate transfer port of the second transfer device, the semiconductor device is vertically transferred to the first transfer device. By providing the function of moving the substrate, the semiconductor substrate can be transferred between the first and second processing apparatuses.

【0020】また、第1の処理装置は感光剤を塗布する
処理、露光された半導体基板を現像する処理および半導
体の熱処理を行うものであり、その上、第1の処理装置
内に第2の搬送装置が配置され、第2の搬送装置が第1
の搬送装置と半導体基板の授受を行って第1の処理装置
内で半導体基板の搬送をするように第1の処理装置が構
成される。また、第2の処理装置は半導体基板をマスク
を通して露光する処理を行うものであることにより、以
下で説明する半導体素子の製造の一連の処理が行われ
る。基板収納部に収納される半導体基板が第1の搬送装
置により第1の処理装置へ搬送され、第1の処理装置内
で感光剤を塗布され、熱処理を施される。第1の処理装
置で感光剤を塗布された半導体基板は、第1の搬送装置
により第1の処理装置から第2の処理装置へ搬送され、
第2の処理装置でマスクを通して露光される。第2の処
理装置で露光された半導体基板は、第1の搬送装置によ
り第2の処理装置から再び第1の処理装置へ搬送され、
第2の処理装置で現像され、熱処理を施される。第1の
処理装置で現像された半導体基板は、第1の搬送装置に
より第1の処理装置から基板収納部へ搬送され、再び基
板収納部に収納される。この一連の処理により、集積回
路のパターンと同様の感光剤の膜が半導体基板上に形成
される。
The first processing device performs a process of applying a photosensitive agent, a process of developing the exposed semiconductor substrate, and a heat treatment of the semiconductor. In addition, the second processing device is provided in the first processing device. A transport device is disposed, and the second transport device is the first transport device.
The first processing apparatus is configured to transfer the semiconductor substrate within the first processing apparatus by exchanging the semiconductor substrate with the transfer apparatus. Further, since the second processing apparatus performs processing for exposing a semiconductor substrate through a mask, a series of processing for manufacturing a semiconductor element described below is performed. The semiconductor substrate accommodated in the substrate accommodating section is transported by the first transport device to the first processing device, where a photosensitive agent is applied in the first processing device and subjected to heat treatment. The semiconductor substrate coated with the photosensitive agent in the first processing device is transported from the first processing device to the second processing device by the first transport device,
Exposure is performed through a mask in a second processing apparatus. The semiconductor substrate exposed by the second processing device is transported again from the second processing device to the first processing device by the first transport device,
It is developed in a second processing device and subjected to a heat treatment. The semiconductor substrate developed by the first processing device is transported from the first processing device to the substrate storage by the first transfer device, and stored again in the substrate storage. Through this series of processes, a film of a photosensitive agent similar to the pattern of the integrated circuit is formed on the semiconductor substrate.

【0021】さらに、第1の搬送装置は、必要に応じて
第2の搬送装置の動作と関係なく基板収納部と第2の処
理装置との間で半導体基板の搬送を行うので、第2の処
理装置で行う処理の前に行われる処理を終えた複数の半
導体基板を、あらかじめ基板収納部に収納しておき、そ
の半導体基板のみに対して、第1の搬送装置が基板収納
部と第2の処理装置との間の半導体基板の搬送を行う。
従って、第1の処理装置内で第2の搬送装置が半導体基
板を搬送して第1の処理装置で半導体素子の製造のため
の処理が行われるのとは別に、第2の処理装置で半導体
素子の製造のための処理を行うことができ、装置運用の
柔軟性の高い処理装置が可能となる。
Furthermore, the first transfer device transfers the semiconductor substrate between the substrate storage unit and the second processing device as necessary, regardless of the operation of the second transfer device. A plurality of semiconductor substrates that have been processed before the processing performed by the processing apparatus are stored in the substrate storage unit in advance, and only the semiconductor substrate is moved by the first transfer device between the substrate storage unit and the second storage unit. Transfer of the semiconductor substrate to and from the processing apparatus.
Therefore, aside from the second transfer device transferring the semiconductor substrate in the first processing device and performing the processing for manufacturing the semiconductor device in the first processing device, the semiconductor device is processed in the second processing device. Processing for manufacturing an element can be performed, and a processing apparatus with high flexibility in apparatus operation can be realized.

【0022】さらに、第1または第2の処理装置のいず
れか一方で保守および点検などの、機能維持のために人
的な、あるいは自動化された回復処理を行う時および、
機能に何らかの障害が発生した時に、処理機能を有する
もう一方の装置で処理可能な半導体基板が基板収納部に
ある場合は、処理可能な半導体基板を第1の搬送装置に
よって基板収納部と、正常に処理機能を有するもう一方
の装置との間で搬送して、処理を行うことができる。
Further, when performing a human or automated recovery process for maintenance of functions such as maintenance and inspection in one of the first and second processing units, and
When a failure occurs in a function, when a semiconductor substrate that can be processed by another apparatus having a processing function is present in the substrate storage unit, the semiconductor substrate that can be processed is transferred to the substrate storage unit by the first transfer device. Can be transported to and from another device having a processing function.

【0023】さらに、基板収納部は、基板収納部の、第
1の搬送路側とは反対側の側部に沿って一直線に延びる
基板搬送路を有し、第2の処理装置は、マスク受渡し口
を備え、マスク受渡し口を備えた第2の処理装置の側面
に沿って一直線に延びるマスク搬送路を有し、基板搬送
路とマスク搬送路とが平行もしくは、同一直線になるよ
うに本発明の処理装置が構成される。従って、半導体基
板とマスクがそれぞれ、互いに平行な搬送路である基板
搬送路とマスク搬送路とで他の装置や他の保管場所から
搬送されたり、半導体基板とマスクが同一の搬送路で他
の装置や他の保管場所から搬送されたりする。この時、
基板搬送路とマスク搬送路とが互いに平行な場合は、基
板搬送路とマスク搬送路の2本の搬送路が互いに干渉し
ないように工場内での処理装置のレイアウトがしやすく
なる。基板搬送路とマスク搬送路とが同一直線の場合
は、専有面積が小さい処理装置を構成することができ
る。
Further, the substrate storage section has a substrate transfer path extending straight along a side of the substrate storage section opposite to the first transfer path side, and the second processing apparatus includes a mask transfer port. A mask transfer path extending straight along the side surface of the second processing apparatus provided with a mask transfer port, and the substrate transfer path and the mask transfer path are parallel or co-linear. A processing device is configured. Therefore, the semiconductor substrate and the mask are transported from another apparatus or another storage location on the substrate transport path and the mask transport path, which are transport paths parallel to each other, or the semiconductor substrate and the mask are transported on the same transport path. Transported from equipment or other storage locations. At this time,
When the substrate transport path and the mask transport path are parallel to each other, the layout of the processing apparatus in the factory becomes easy so that the two transport paths of the substrate transport path and the mask transport path do not interfere with each other. When the substrate transport path and the mask transport path are on the same straight line, a processing apparatus having a small occupied area can be configured.

【0024】[0024]

【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して説明する。
Next, embodiments of the present invention will be described with reference to the drawings.

【0025】図1は、本発明の処理装置の一実施形態を
示す概略構成図であり、本実施形態で用いた塗布および
現像処理装置と、露光処理装置とには従来の処理装置で
用いたものと同等のものを用いている。
FIG. 1 is a schematic structural view showing one embodiment of the processing apparatus of the present invention. The coating and developing processing apparatus used in this embodiment and the exposure processing apparatus used in the conventional processing apparatus are used. The equivalent is used.

【0026】本実施形態の処理装置は図1に示すよう
に、1方向に延びる基板収納部1に、複数の半導体基板
を収納した基板収納容器5が基板収納部1の長手方向に
1列に並べて載置されており、この基板収納部1に沿っ
て一直線に第1の搬送路6が延びている。第1の搬送路
6上には第1の搬送装置8が配置されていて、第1の搬
送装置8が第1の搬送路6上を直線移動することによ
り、目的の基板収納容器5に到達し、この基板収納容器
5内部に収められた半導体基板を取り出す。第1の搬送
路6の、基板載置部1側とは反対側の側部には、第1の
処理装置である塗布および現像処理装置2が隣接して配
置され、第1の搬送路6の端部には、第2の処理装置で
ある露光処理装置3が隣接して配置されている。基板収
納部1の、第1の搬送路6とは反対側の側部に沿って基
板搬送路18が一直線に延び、基板搬送路18上を移動
する自動搬送装置(不図示)によって、図示されていな
い他の収納部や他の処理装置などと基板収納部1との間
で基板収納容器5を搬送する。
As shown in FIG. 1, in the processing apparatus of this embodiment, substrate storage containers 5 storing a plurality of semiconductor substrates are arranged in a row in the longitudinal direction of the substrate storage portion 1 in a substrate storage portion 1 extending in one direction. The first transport path 6 extends in a straight line along the substrate storage unit 1. A first transfer device 8 is arranged on the first transfer path 6, and the first transfer device 8 linearly moves on the first transfer path 6 to reach the target substrate storage container 5. Then, the semiconductor substrate contained in the substrate container 5 is taken out. On the side of the first transport path 6 opposite to the substrate mounting section 1 side, a coating and developing processing apparatus 2 which is a first processing apparatus is disposed adjacent to the first transport path 6. Exposure processing apparatus 3 as a second processing apparatus is disposed adjacent to the end of. A substrate transport path 18 extends in a straight line along a side of the substrate storage unit 1 opposite to the first transport path 6 and is illustrated by an automatic transport device (not shown) moving on the substrate transport path 18. The substrate storage container 5 is transported between the substrate storage unit 1 and another storage unit or another processing device that is not present.

【0027】さらに、塗布および現像処理装置2の内部
について説明すると、塗布および現像処理装置2内部を
2つのエリアに区分けするように、第2の搬送路7が第
1の搬送路6に対して直交する方向に一直線に延びてい
る。一方のエリアには複数のスピン処理部10が第2の
搬送路7と平行な方向に1列に並べられて配置され、も
う一方のエリアには複数の熱処理部11が第2の搬送路
7と平行な方向に1列に並べられて設置されている。第
2の搬送路7上には第2の搬送装置9が配置されてお
り、この第2の搬送装置9は、第2の搬送路7と第1の
搬送路6とが直交する位置で第1の搬送装置8との半導
体基板の授受を行い、第2の搬送路7を移動することに
よって塗布および現像処理装置2内で半導体基板を搬送
する。
Further, the inside of the coating and developing treatment apparatus 2 will be described. The second transporting path 7 is moved relative to the first transporting path 6 so as to divide the inside of the coating and developing processing apparatus 2 into two areas. It extends in a straight line in a direction orthogonal to the direction. In one area, a plurality of spin processing units 10 are arranged in a row in a direction parallel to the second transport path 7, and in the other area, a plurality of heat treatment units 11 are provided in the second transport path 7. Are arranged in a row in a direction parallel to A second transfer device 9 is arranged on the second transfer path 7, and the second transfer device 9 is located at a position where the second transfer path 7 and the first transfer path 6 are orthogonal to each other. The transfer of the semiconductor substrate to and from the first transfer device 8 is performed, and the semiconductor substrate is transferred in the coating and developing treatment device 2 by moving along the second transfer path 7.

【0028】露光処理装置3について説明すると、第1
の搬送路6と接する露光処理装置3の側面には基板受渡
し口(不図示)が設けられており、この基板受渡し口が
ある露光処理装置3の側面は、露光処理装置正面16と
直交している。露光処理装置正面16は操作スイッチな
どがある操作面であり、この露光処理装置正面16にマ
スク受渡し口(不図示)がある。露光処理装置3の内部
にはマスク受渡し部17が設置されており、従来では、
マスクが人手の作業によってマスク受渡し口を通してマ
スク受渡し部17へ搬入、あるいはマスク受渡し部17
から搬出されている。露光処理装置3の内部で基板受渡
し口に近い位置には基板受入れ部12と基板払出し部1
3とが配置され、露光処理装置3のほぼ中央の位置に露
光ステージ15が設置されている。基板受入れ部12か
ら露光ステージ15への半導体基板の搬送および、露光
ステージ15から基板払出し部13への半導体基板の搬
送をするための第3の搬送装置14が露光処理装置3内
部に配置されている。
The exposure processing apparatus 3 will be described.
A substrate delivery port (not shown) is provided on a side surface of the exposure processing apparatus 3 which is in contact with the transfer path 6 of the exposure processing apparatus 3. The side face of the exposure processing apparatus 3 having the substrate delivery port is orthogonal to the front face 16 of the exposure processing apparatus. I have. The front face 16 of the exposure processing apparatus is an operation surface having operation switches and the like, and the front face 16 of the exposure processing apparatus has a mask delivery port (not shown). A mask delivery unit 17 is provided inside the exposure processing apparatus 3, and conventionally,
The mask is manually carried into the mask delivery unit 17 through the mask delivery port, or the mask delivery unit 17
Has been carried out from. A substrate receiving unit 12 and a substrate unloading unit 1 are located inside the exposure processing apparatus 3 near the substrate delivery port.
And an exposure stage 15 is installed at a substantially central position of the exposure processing apparatus 3. A third transfer device 14 for transferring the semiconductor substrate from the substrate receiving unit 12 to the exposure stage 15 and transferring the semiconductor substrate from the exposure stage 15 to the substrate unloading unit 13 is disposed inside the exposure processing apparatus 3. I have.

【0029】本実施形態の処理装置に用いた各搬送装置
間での半導体基板の受渡し方法としては、あらかじめ各
搬送装置間での受渡し場所に半導体基板の仮置き台を配
置し、受け渡す側の搬送装置が半導体基板を一時的に仮
置き台に置き、受け取る側の搬送装置が仮置き台の半導
体基板を取る動作が行われる。
As a method of transferring a semiconductor substrate between the transfer devices used in the processing apparatus of the present embodiment, a temporary placing table of the semiconductor substrate is previously arranged at a transfer place between the transfer devices, and a transfer side of the transfer side is used. The transfer device temporarily places the semiconductor substrate on the temporary placing table, and the receiving transfer device takes the semiconductor substrate on the temporary placing table.

【0030】本実施形態では、上述したように従来の処
理装置に用いていたものと同等の塗布および現像処理装
置2、露光処理装置3を用いたので、第2の搬送装置9
の上下方向の移動範囲および、基板受入れ部12と基板
払出し部13の高さはそれぞれが対応する従来のものと
同様であり、第2の搬送装置9の上下方向の移動範囲が
500〜700mm、第2の搬送装置9の上下方向の移
動範囲の最下端の位置から400〜500mm下がった
高さに基板受入れ部12と基板払出し部13とがある。
従って、第1の搬送装置8は、第2の搬送装置9との半
導体基板の授受や、基板受入れ部12および基板払出し
部13で半導体基板の授受をするため、上下方向の移動
範囲が400〜500mmになる。このように塗布およ
び現像処理装置2と露光処理装置3とを隣接させず、塗
布および現像処理装置2と露光処理装置3との間の半導
体基板の搬送が第1の搬送装置8を介して行われるの
で、従来の処理装置の塗布および現像処理装置と、露光
処理装置との間に配置されていた自動搬送装置が必要な
くなり、従来の処理装置と比較して本実施形態の処理装
置の方が、自動搬送装置が1つ少ない構成になる。基板
収納容器5内には、25枚の半導体基板が互いが平行に
上下方向に並べて収納され、1番上の半導体基板と、1
番上の半導体基板から152.4mm下がった位置にあ
る上から25枚目の半導体基板とが第1の搬送装置8の
上下方向の移動範囲である400〜500mmの範囲内
にあれば良い。
In this embodiment, as described above, the same coating and developing processing apparatus 2 and exposure processing apparatus 3 as those used in the conventional processing apparatus are used.
The vertical moving range and the heights of the substrate receiving portion 12 and the substrate discharging portion 13 are the same as those of the corresponding conventional devices, and the vertical moving range of the second transfer device 9 is 500 to 700 mm. The substrate receiving unit 12 and the substrate unloading unit 13 are located at a height lower by 400 to 500 mm from the lowermost position of the vertical movement range of the second transfer device 9.
Accordingly, the first transfer device 8 transfers the semiconductor substrate to and from the second transfer device 9 and transfers the semiconductor substrate at the substrate receiving unit 12 and the substrate unloading unit 13. 500 mm. In this manner, the coating and developing treatment apparatus 2 and the exposure processing apparatus 3 are not adjacent to each other, and the transfer of the semiconductor substrate between the coating and developing processing apparatus 2 and the exposure processing apparatus 3 is performed via the first transfer device 8. This eliminates the need for an automatic transport device disposed between the coating and developing processing apparatus of the conventional processing apparatus and the exposure processing apparatus, and the processing apparatus of the present embodiment is more efficient than the conventional processing apparatus. In this case, the number of the automatic transfer devices is reduced by one. In the substrate storage container 5, 25 semiconductor substrates are stored side by side in a vertical direction in parallel with each other.
It suffices that the 25th semiconductor substrate from the top located at a position lower by 152.4 mm from the uppermost semiconductor substrate is within the range of 400 to 500 mm, which is the vertical movement range of the first transfer device 8.

【0031】次に、上述のように構成された本実施形態
の処理装置の動作について説明する。複数の半導体基板
を収めた基板収納容器5が、基板搬送路18上を移動す
る基板収納容器搬送装置(不図示)により搬送されて基
板載置部1に載置される。第1の搬送装置8があらかじ
め設定された条件に従い、基板載置部1の基板収納容器
5から半導体基板を取り出して搬送し、感光性の樹脂を
塗布するために塗布および現像処理装置2内部の第2の
搬送装置9へ半導体基板を受け渡す。半導体基板を受け
取った第2の搬送装置9は、半導体基板をスピン処理部
10へ搬送する。半導体基板はスピン処理部10で半導
体基板と感光剤との密着性を向上させるためにHMDS
(ヘキサメチレンジシラン)蒸気で処理された後に半導
体基板に感光剤が塗布される。感光剤の塗布処理を終え
た半導体基板は第2の搬送装置9によってスピン処理部
10から熱処理部11に搬送され、熱処理部11で半導
体基板の露光前ベーキングが行われ、半導体基板上の感
光剤の膜が適当に硬化され、安定化される。露光前ベー
キングを終えた半導体基板は第2の搬送装置9によって
熱処理部11から第1の搬送装置8へ搬送されて第1の
搬送装置8に受け渡される。第1の搬送装置8は受け取
った半導体基板を基板受入れ部12へ搬送し、半導体基
板を基板受入れ部12上に載置する。基板受入れ部12
上の半導体基板は露光処理装置3内部の第3の搬送装置
14によって基板受入れ部12から露光ステージ15へ
搬送され、露光ステージ15で半導体基板がマスクを用
いて露光される。露光された半導体基板が第3の搬送装
置14によって露光ステージ15から基板払出し部13
へ搬送されて基板払出し部13上に載置される。基板払
出し部13上の半導体基板は第1の搬送装置8によって
第2の搬送装置9へ搬送されて第2の搬送装置9に受け
渡される。第2の搬送装置9は受け取った半導体基板を
熱処理部11へ搬送し、熱処理部11で半導体基板の露
光後ベーキングが行われる。露光後ベーキングを終えた
半導体基板は第2の搬送装置2によって熱処理部11か
らスピン処理部10へ搬送され、スピン処理部10で現
像される。現像された半導体基板は、第2の搬送装置2
によって再びスピン処理部10から熱処理部11へ搬送
され、現像後の半導体基板上に形成された感光剤のパタ
ーンを安定化するために熱処理部11で半導体基板の現
像後ベーキングが行われる。この処理装置での全ての処
理を終えた半導体基板は第2の搬送装置9によって熱処
理部11から第1の搬送装置8へ搬送され、第1の搬送
装置8が第2の搬送装置9から受け取った半導体基板を
基板収納部1上の基板収納容器5内部へ戻す。
Next, the operation of the processing apparatus of this embodiment configured as described above will be described. The substrate storage container 5 containing a plurality of semiconductor substrates is transferred by a substrate storage container transfer device (not shown) moving on the substrate transfer path 18 and placed on the substrate mounting portion 1. The first transfer device 8 takes out the semiconductor substrate from the substrate storage container 5 of the substrate mounting portion 1 according to a preset condition, transfers the semiconductor substrate, and applies the photosensitive resin to the inside of the coating and developing treatment device 2 to apply the photosensitive resin. The semiconductor substrate is transferred to the second transfer device 9. The second transfer device 9 that has received the semiconductor substrate transfers the semiconductor substrate to the spin processing unit 10. The semiconductor substrate is HMDS to improve the adhesion between the semiconductor substrate and the photosensitive agent in the spin processing unit 10.
After being treated with (hexamethylenedisilane) vapor, a photosensitive agent is applied to the semiconductor substrate. The semiconductor substrate that has been subjected to the photosensitive agent coating process is transported from the spin processing unit 10 to the heat treatment unit 11 by the second transport device 9, where the semiconductor substrate is baked before exposure in the heat treatment unit 11, and the photosensitive agent on the semiconductor substrate is exposed. Is appropriately cured and stabilized. The semiconductor substrate that has been subjected to the pre-exposure baking is transferred from the heat treatment section 11 to the first transfer device 8 by the second transfer device 9 and transferred to the first transfer device 8. The first transfer device 8 transfers the received semiconductor substrate to the substrate receiving unit 12, and places the semiconductor substrate on the substrate receiving unit 12. Substrate receiving part 12
The upper semiconductor substrate is transferred from the substrate receiving section 12 to the exposure stage 15 by the third transfer device 14 inside the exposure processing apparatus 3, and the semiconductor substrate is exposed on the exposure stage 15 using a mask. The exposed semiconductor substrate is transferred from the exposure stage 15 to the substrate delivery unit 13 by the third transfer device 14.
And is placed on the substrate payout unit 13. The semiconductor substrate on the substrate unloading section 13 is transported by the first transport device 8 to the second transport device 9 and delivered to the second transport device 9. The second transfer device 9 transfers the received semiconductor substrate to the heat treatment unit 11 where the semiconductor substrate is subjected to post-exposure baking. The semiconductor substrate that has been subjected to the post-exposure baking is transferred from the heat treatment unit 11 to the spin processing unit 10 by the second transfer device 2 and developed by the spin processing unit 10. The developed semiconductor substrate is transferred to the second transfer device 2
Then, the semiconductor substrate is transported from the spin processing unit 10 to the heat treatment unit 11 again, and the semiconductor substrate is baked after development in the heat treatment unit 11 to stabilize the pattern of the photosensitive agent formed on the semiconductor substrate after development. The semiconductor substrate that has been completely processed by this processing apparatus is transferred from the heat treatment section 11 to the first transfer apparatus 8 by the second transfer apparatus 9, and the first transfer apparatus 8 receives the semiconductor substrate from the second transfer apparatus 9. The returned semiconductor substrate is returned to the inside of the substrate storage container 5 on the substrate storage unit 1.

【0032】このようにして、本実施形態の処理装置を
用いて半導体基板上に、集積回路に応じたパターンの感
光剤の膜が形成されるが、従来に用いていた処理装置に
比べて本実施形態のものの方が、搬送装置が1つ少ない
構成になり、クリーンルーム内での処理装置の専有面積
が従来の処理装置よりも小さくなる。その上、搬送装置
が1つ少ない構成なので、半導体基板が大型化されて
も、半導体基板の大型化に伴う搬送装置の大型化によ
る、処理装置の専有面積の増大が抑えられる。
As described above, a photosensitive agent film having a pattern corresponding to an integrated circuit is formed on a semiconductor substrate by using the processing apparatus of the present embodiment. In the embodiment, the number of transfer devices is one less, and the occupation area of the processing device in the clean room is smaller than that of the conventional processing device. In addition, since the number of the transfer devices is one, even if the size of the semiconductor substrate is increased, the increase in the occupation area of the processing device due to the increase in the size of the transfer device accompanying the increase in the size of the semiconductor substrate is suppressed.

【0033】上記の処理装置の動作の説明では、1枚の
半導体基板の処理が終了するまでの一連の工程を説明し
たが、本実施形態では基板収納部1に沿って延びる第1
の搬送路6に、塗布および現像処理装置2と露光処理装
置3とが隣接しているため、半導体基板が塗布および露
光前ベーキングの処理を終えて露光処理装置3へ搬送さ
れる前に基板収納部1の基板収納容器5へ半導体基板を
一時的に戻すことができる。あるいは、半導体基板が露
光処理装置3内部で露光されて塗布および現像処理装置
2へ搬送される前にも基板収納部1の基板収納容器5へ
半導体基板を一時的に戻すことができる。例えば、塗布
および露光前ベーキングの処理を終えてあらかじめ基板
収納部1に収納された複数の半導体基板を、第2の搬送
装置9の動作と関係なく、第1の搬送装置8が露光処理
装置3のみに対して搬送を行わせてもよく、装置運用の
柔軟性の高い処理装置が可能となる。
In the above description of the operation of the processing apparatus, a series of steps up to the end of processing of one semiconductor substrate has been described. In the present embodiment, however, the first step extending along the substrate storage 1 is described.
Since the coating and developing processing apparatus 2 and the exposure processing apparatus 3 are adjacent to the transfer path 6, the semiconductor substrate is stored before the semiconductor substrate is transferred to the exposure processing apparatus 3 after completing the coating and pre-exposure baking processing. The semiconductor substrate can be temporarily returned to the substrate storage container 5 of the part 1. Alternatively, the semiconductor substrate can be temporarily returned to the substrate storage container 5 of the substrate storage unit 1 even before the semiconductor substrate is exposed inside the exposure processing apparatus 3 and transported to the coating and developing processing apparatus 2. For example, after the coating and pre-exposure baking processes have been completed, the first transfer device 8 transfers the plurality of semiconductor substrates previously stored in the substrate storage unit 1 to the exposure processing device 3 irrespective of the operation of the second transfer device 9. Only the transfer may be performed, and a processing apparatus with high flexibility in the operation of the apparatus can be realized.

【0034】また、塗布および現像処理装置2または露
光処理装置3のいずれか一方の装置で、保守および点検
などの、機能維持のために人的な、あるいは自動化され
た回復処理を行う時および、機能に何らかの障害が発生
した時などの、装置の機能が失われる場合がある。この
場合、機能を有しているもう一方の装置で処理する準備
ができている半導体基板を、第1の搬送装置8により基
板収納部1と機能を有しているもう一方の装置との間で
搬送し、機能を有する装置を稼動させることで、生産効
率の高い処理装置が可能になる。
When one of the coating and developing processing apparatus 2 and the exposure processing apparatus 3 performs a human or automated recovery processing for maintaining functions, such as maintenance and inspection, and The function of the device may be lost, for example, when some trouble occurs in the function. In this case, the semiconductor substrate which is ready to be processed by the other device having the function is transferred between the substrate storage unit 1 and the other device having the function by the first transfer device 8. And a device having a function is operated, thereby enabling a processing device with high production efficiency.

【0035】本実施形態の処理装置では、露光ステージ
15で用いられるマスクの搬送が自動化されておらず、
人的な作業あるいは人的な操作により行われ、マスクの
交換では複数のマスクを収納したマスク収納容器(不図
示)がマスク受渡し部17へ搬送される。しかし、今後
はマスクの自動搬送が検討されることになり、マスク収
納容器を搬送するマスクの搬送装置(不図示)が移動す
るためのマスク搬送路19が、マスク受渡し部17を設
けた露光処理装置正面16に沿って一直線に延びること
になる。この場合、マスク搬送路19が基板搬送路18
に対して平行となるので、マスク搬送路19が基板搬送
路18に干渉しにくくなり、マスク搬送路19を組みや
すくなる。その上、マスクの搬送装置と基板収納容器の
搬送装置とを1つの搬送装置で共用するために、基板搬
送路18とマスク搬送路19とを1つにまとめて共用す
ることも検討でき、工場内のレイアウトの柔軟性が向上
する。
In the processing apparatus of the present embodiment, the transport of the mask used in the exposure stage 15 is not automated,
This is performed by a human operation or a human operation. In mask replacement, a mask storage container (not shown) storing a plurality of masks is transported to the mask delivery unit 17. However, in the future, automatic transfer of a mask will be considered, and a mask transfer path 19 for moving a mask transfer device (not shown) for transferring a mask storage container is provided with an exposure process provided with a mask transfer unit 17. It will extend straight along the apparatus front 16. In this case, the mask transport path 19 is
, The mask transport path 19 does not easily interfere with the substrate transport path 18, and the mask transport path 19 is easily assembled. In addition, in order to share the transfer device for the mask and the transfer device for the substrate storage container with one transfer device, it is also possible to consider sharing the substrate transfer path 18 and the mask transfer path 19 as one. Increased layout flexibility within.

【0036】また、本実施形態の処理装置では基板収納
部1に沿って延びる第1の搬送路6に塗布および現像処
理装置2と露光処理装置3とが隣接し、基板収納部1に
ある半導体基板が直接、塗布および現像処理装置2と露
光処理装置3とに搬送されるので、マスクの自動搬送の
際には、マスクを基板収納部1に収納させ、マスクを半
導体基板と同じ搬送経路で基板収納部1から露光処理装
置3へ自動搬送することができる。
In the processing apparatus according to the present embodiment, the coating and developing processing apparatus 2 and the exposure processing apparatus 3 are adjacent to the first transport path 6 extending along the substrate storage section 1, and Since the substrate is directly transported to the coating and developing processing apparatus 2 and the exposure processing apparatus 3, the mask is stored in the substrate storing section 1 and the mask is transported along the same transport path as the semiconductor substrate during automatic transport of the mask. Automatic transfer from the substrate storage unit 1 to the exposure processing apparatus 3 is possible.

【0037】さらに、本実施形態の処理装置では、第1
の搬送装置6の端部に露光処理装置3が隣接している
が、この露光処理装置3が第1の搬送装置6のどちらの
端部に隣接されていてもよい。あるいは、塗布および現
像処理装置2が第1の搬送路6の端部に隣接し、露光処
理装置3が第1の搬送路のもう一方の端部に隣接してい
る構成でもよく、クリーンルーム内で装置が効率良く配
置できるように各装置の形状や大きさに合わせて処理装
置を構成すればよい。
Further, in the processing apparatus of the present embodiment, the first
Although the exposure processing apparatus 3 is adjacent to the end of the transfer apparatus 6, the exposure processing apparatus 3 may be adjacent to either end of the first transfer apparatus 6. Alternatively, the coating and developing processing apparatus 2 may be adjacent to an end of the first transport path 6 and the exposure processing apparatus 3 may be adjacent to the other end of the first transport path. What is necessary is just to configure the processing device according to the shape and size of each device so that the devices can be efficiently arranged.

【0038】[0038]

【発明の効果】以上説明したように本発明は、半導体素
子の製造に使用され、半導体基板が自動で搬送される処
理装置において、第1の処理装置である塗布および現像
処理装置と、第2処理装置である露光装置処理装置とが
それぞれ、基板収納部に沿って一直線に延びる第1の搬
送路に隣接して配置され、第1の搬送路上を移動する第
1の搬送装置によって基板収納部と第1の処理装置の
間、基板収納部と第2の処理装置の間、第1および第2
の処理装置の間で半導体基板の搬送が行われる。このこ
とにより、第1の搬送装置と第1の処理装置との基板の
受渡し位置が、第2の処理装置の基板の受渡し位置であ
る基板受渡し口と高さが異なっていても、第1および第
2の処理装置の基板受渡し位置の上下方向の間で、第1
の搬送装置が半導体基板の搬送を行うので、従来の処理
装置のように第1の処理装置から第2の処理装置へ半導
体基板を搬送するための専用の搬送装置が不要になる。
従って、本発明は、上来の処理装置に比べ、クリーンル
ーム内での処理装置の専有面積が少なく、コストを抑え
た処理装置を実現する効果がある。
As described above, according to the present invention, in a processing apparatus used for manufacturing a semiconductor device and in which a semiconductor substrate is automatically transferred, a coating and developing processing apparatus as a first processing apparatus, An exposure apparatus and a processing apparatus, which are processing apparatuses, are respectively disposed adjacent to a first transport path extending linearly along the substrate storage section, and the substrate storage section is moved by the first transport apparatus moving on the first transport path. And the first processing device, between the substrate storage unit and the second processing device, the first and second processing devices.
The transfer of the semiconductor substrate is performed between the processing apparatuses. Thereby, even if the transfer position of the substrate between the first transfer device and the first processing device is different from the substrate transfer port which is the transfer position of the substrate of the second processing device, the first and the second transfer positions are different. In the vertical direction between the substrate transfer positions of the second processing apparatus, the first
The transfer device for transferring the semiconductor substrate does not require a dedicated transfer device for transferring the semiconductor substrate from the first processing device to the second processing device as in the conventional processing device.
Therefore, the present invention has an effect of realizing a processing apparatus in which the occupation area of the processing apparatus in the clean room is small and the cost is reduced as compared with the conventional processing apparatuses.

【0039】また、処理装置が上記のように配置される
ので、半導体基板を1枚毎に一連の処理を行うだけでな
く、第1または第2の処理装置で処理を終えた半導体基
板を基板収納部に収納した後に、第1の搬送装置が第1
または第2の処理装置のいずれか一方のみに対して半導
体基板の搬送を行い、1つの処理のみを行うことが可能
であり、装置運用の柔軟性を高める効果がある。
Further, since the processing apparatus is arranged as described above, not only is a series of processing performed for each semiconductor substrate, but also the semiconductor substrate, which has been processed by the first or second processing apparatus, is processed. After being stored in the storage section, the first transport device
Alternatively, the semiconductor substrate can be transferred to only one of the second processing apparatuses and only one processing can be performed, which has an effect of increasing the flexibility of apparatus operation.

【0040】さらに、露光処理装置に沿って一直線に延
びるマスク搬送路を設け、他の工程の処理装置と基板収
納容器との間で半導体基板が搬送される基板搬送路と、
マスク搬送路とが平行になるように処理装置を構成する
ことにより、基板搬送路とマスク搬送路とが干渉しにく
くなる。その上、基板の搬送装置とマスクの搬送装置と
を1つにまとめて共用するために、基板搬送路とマスク
搬送路とを1つの搬送路にまとめて共用することも検討
でき、工場内で搬送路のレイアウトの柔軟性を向上させ
る効果がある。
Further, there is provided a mask transfer path extending in a straight line along the exposure processing apparatus, and a substrate transfer path for transferring the semiconductor substrate between the processing apparatus in another process and the substrate storage container;
By configuring the processing apparatus so that the mask transport path is parallel to the mask transport path, the substrate transport path and the mask transport path are less likely to interfere. In addition, in order to combine and share the substrate transfer device and the mask transfer device into one, it is also possible to consider sharing and sharing the substrate transfer path and the mask transfer path into one transfer path. This has the effect of improving the flexibility of the layout of the transport path.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施形態を示す処理装置の概略構成
図である。
FIG. 1 is a schematic configuration diagram of a processing apparatus showing an embodiment of the present invention.

【図2】従来の技術による処理装置の概略構成図であ
る。
FIG. 2 is a schematic configuration diagram of a processing apparatus according to a conventional technique.

【符号の説明】 1、101 基板収納部 2、102 塗布および現像処理装置 3、103 露光処理装置 5、105 基板収納容器 6、106 第1の搬送路 7、107 第2の搬送路 8、108 第1の搬送装置 9、109 第2の搬送装置 10、110 スピン処理部 11、111 熱処理部 12、112 基板受入れ部 13、113 基板払出し部 14、114 第3の搬送装置 15、115 露光ステージ 16、116 露光処理装置正面 17、117 マスク受渡し部 18、118 基板搬送路 19、119 マスク搬送路 120 受け渡しステージ 121 第4の搬送装置DESCRIPTION OF SYMBOLS 1, 101 Substrate storage unit 2, 102 Coating and development processing device 3, 103 Exposure processing device 5, 105 Substrate storage container 6, 106 First transport path 7, 107 Second transport path 8, 108 First transfer device 9, 109 Second transfer device 10, 110 Spin processing unit 11, 111 Heat treatment unit 12, 112 Substrate receiving unit 13, 113 Substrate unloading unit 14, 114 Third transfer device 15, 115 Exposure stage 16 , 116 Exposure processing apparatus front face 17, 117 Mask transfer section 18, 118 Substrate transfer path 19, 119 Mask transfer path 120 Transfer stage 121 Fourth transfer apparatus

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 複数の半導体基板が収納され、1方向に
延びる基板収納部と、 該基板収納部に沿って一直線に
延びる第1の搬送路と、 該第1の搬送路上を移動する第1の搬送装置と、 前記第1の搬送路の、前記基板収納部側とは反対側の側
部に隣接して配置され、前記第1の搬送装置により搬送
される半導体基板に対して処理を行う第1の処理装置
と、 前記第1の搬送路の端部に隣接して配置され、前記第1
の処理装置が前記第1の搬送装置と半導体基板の受渡し
する位置と異なる高さに基板受渡し口を備えて、前記第
1の搬送装置により搬送される半導体基板に対して処理
を行う第2の処理装置とを有し、 前記第1の搬送装置は、前記基板収納部と前記第1の処
理装置間での半導体基板の搬送、前記基板収納部と前記
第2の処理装置間での半導体基板の搬送、第1および第
2の処理装置間での半導体基板の搬送を行うように構成
されたことを特徴とする処理装置。
1. A substrate accommodating portion, in which a plurality of semiconductor substrates are accommodated and extending in one direction, a first transport path extending straight along the substrate accommodating portion, and a first moving path moving on the first transport path. And a semiconductor device transported by the first transport device and disposed adjacent to a side of the first transport path opposite to the substrate storage unit side. A first processing device, which is disposed adjacent to an end of the first transport path;
A processing apparatus provided with a substrate transfer port at a height different from a position where the semiconductor substrate is transferred between the first transfer apparatus and the second transfer apparatus for performing processing on the semiconductor substrate transferred by the first transfer apparatus. A processing device, wherein the first transfer device transfers a semiconductor substrate between the substrate storage unit and the first processing device, and a semiconductor substrate between the substrate storage unit and the second processing device. And a transfer of the semiconductor substrate between the first and second processing apparatuses.
【請求項2】 前記第1の処理装置は、前記第1の搬送
装置と基板の授受を行うと共に前記第1の処理装置内で
半導体基板の自動搬送を行う第2の搬送装置を有し、感
光剤を塗布する処理、露光された半導体基板を現像する
処理および、半導体基板の熱処理を行うものであり、前
記第2の処理装置は、マスクを用いて半導体基板の露光
を行うものである、請求項1に記載の処理装置。
2. The first processing device includes a second transfer device that exchanges a substrate with the first transfer device and that automatically transfers a semiconductor substrate within the first processing device. A process of applying a photosensitive agent, a process of developing the exposed semiconductor substrate, and a heat treatment of the semiconductor substrate, wherein the second processing apparatus performs exposure of the semiconductor substrate using a mask, The processing device according to claim 1.
【請求項3】 前記第1の搬送装置は、必要に応じ、前
記第2の搬送装置の動作とは関係なく前記基板収納部と
前記第2の処理装置との間で半導体基板の搬送を行う請
求項2に記載の処理装置。
3. The first transfer device transfers a semiconductor substrate between the substrate storage unit and the second processing device as necessary, irrespective of the operation of the second transfer device. The processing device according to claim 2.
【請求項4】 前記第1の搬送装置は、前記第1または
第2の処理装置のいずれか一方で、機能維持のために人
的なあるいは自動化された回復処理を行う時および、機
能に何らかの障害が発生した時に、半導体基板に対して
の処理機能が失われていない一方の装置と前記基板収納
部との間で半導体基板の搬送を行う、請求項1、2たは
3に記載の処理装置。
4. The first transfer device is configured to perform a human or automated recovery process for maintaining a function in one of the first and second processing devices, and to perform some function on the function. 4. The process according to claim 1, wherein when a failure occurs, the semiconductor substrate is transported between the one device in which the processing function for the semiconductor substrate is not lost and the substrate storage unit. apparatus.
【請求項5】 前記基板収納部は、他の工程の処理装置
との間で半導体基板が搬送されるために、前記基板収納
部の、前記第1の搬送路側とは反対側の側部に沿って一
直線に延びる基板搬送路を有し、 前記第2の処理装置は、マスク受渡し口を備え、該マス
ク受渡し口が設けられた前記第2の処理装置の側面に沿
って一直線に延びるマスク搬送路を有し、 前記基板搬送路と前記マスク搬送路とが平行もしくは、
同一直線になるように構成された請求項2、3または4
に記載の処理装置。
5. The substrate storage section is provided on a side of the substrate storage section opposite to the first transfer path, since the semiconductor substrate is transferred to and from a processing apparatus in another process. The second processing apparatus includes a mask transfer port, and the mask transfer port extends linearly along a side surface of the second processing apparatus provided with the mask transfer port. A path, wherein the substrate transport path and the mask transport path are parallel or
5. The method of claim 2, 3 or 4, wherein the lines are arranged so as to be on the same straight line.
A processing device according to claim 1.
JP8322751A 1996-12-03 1996-12-03 Treating device Withdrawn JPH10163292A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8322751A JPH10163292A (en) 1996-12-03 1996-12-03 Treating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8322751A JPH10163292A (en) 1996-12-03 1996-12-03 Treating device

Publications (1)

Publication Number Publication Date
JPH10163292A true JPH10163292A (en) 1998-06-19

Family

ID=18147243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8322751A Withdrawn JPH10163292A (en) 1996-12-03 1996-12-03 Treating device

Country Status (1)

Country Link
JP (1) JPH10163292A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100452340C (en) * 2004-12-24 2009-01-14 日本网目版制造株式会社 Substrate treating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100452340C (en) * 2004-12-24 2009-01-14 日本网目版制造株式会社 Substrate treating apparatus

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