JPH10163188A - Semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To remove the film rise in projection form from the pattern surface of a polyimide resin film, by forming a film of polyamide acid which is obtained by reacting tetracarboxylic acid dianhydride including the dianhydrous oxide expressed by the specified chemical formula and diamine. SOLUTION: A resin film is formed by applying polyamide solution which is obtained by reacting tetracarboxylic acid dianhydride including acid dianhydride shown by general formula (among the formula, n shows an integer of 2-16) and diamine. Then, thereon a resist film is formed. Next, the exposure, the development, and the exfoliation of the resist film are performed, and then, polyamide acid is dehydrated and cyclized. Together with it, this is heat-treated at a temperature above the glass transition temperature of polyimide resin obtained finally and besides not less than 300 deg.C so as to form an interlayer insulating film and/or surface protective film of polyimide resin.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to an interlayer insulating film and / or
Also, the present invention relates to a semiconductor device having a surface protective film and a method for manufacturing the same.

[0002]

2. Description of the Related Art Hitherto, a polyimide resin has been used as a surface protective film or an interlayer insulating film of various electronic parts such as semiconductors. This polyimide resin is made of PSG, SiO ₂ ,
A flat film can be formed on a substrate having large irregularities as compared with an inorganic insulating film such as SiN, and a film having a thickness of 1 μm or more can be easily formed. Further, heat resistance is higher than other organic materials. Because of its advantages, it is used as an interlayer insulating film of a bipolar IC, and has recently been widely used as an α-ray shielding film or a buffer coat film of a memory element.
The above-mentioned polyimide-based resin film is formed by applying a polyimide precursor composition onto a wafer which is a semiconductor substrate by a method such as a spin method, and performing a heat treatment. Further, it is necessary to form a pattern such as a via hole in the polyimide resin film, and this pattern is formed by a wet etching process through a photoresist or the like.

[0003] As a method of forming the pattern, 80-1
A positive resist is formed as a mask material on a polyimide resin film that has been heat-treated (prebaked) at 60 ° C., and after exposure, exposure of the positive resist and etching of the polyimide resin film are successively performed using an alkaline aqueous solution. A method of forming a pattern and the like are known. in this way,
After the pattern is formed, it is necessary to perform heat treatment again at a temperature of 300 ° C. or more to completely cure the polyimide resin film.

However, in the case of a general polyimide-based resin, when a polyimide-based resin film is etched using an alkaline aqueous solution and then heat-treated at a temperature equal to or higher than pre-bake, a protruding film bulge is formed at a pattern end on the surface of the polyimide-based resin film. Therefore, there is a problem that a metal wiring layer such as an aluminum electrode or a barrier metal (metal multilayer film) cannot be formed satisfactorily on the pattern forming portion. This problem becomes more serious as the thickness of the polyimide resin film forming the pattern increases. For this reason, recently, a method has been already proposed in which, after forming a pattern of a polyimide-based resin film, the surface of the resin film is dry-etched using a gas such as O ₂ to remove protrusion-like film bulges at pattern end portions. However, this method has a drawback that when the composition of the polyimide resin film is different, the dry etching conditions also need to be changed, and the pretreatment for forming the metal wiring layer increases.

[0005]

SUMMARY OF THE INVENTION The invention according to claim 1 solves the above-mentioned problems of the prior art, and there is no protrusion-like film bulge on the pattern surface of the polyimide resin film.
Provided is a semiconductor device in which a good metal wiring layer is formed above the resin film pattern. The invention according to claim 2 solves the above-mentioned problems of the prior art, and does not have a protruding film bulge on the surface of the pattern of the polyimide resin film, and easily forms a good metal wiring layer on the resin film pattern. Provided is a method for manufacturing a semiconductor device that can be formed.

[0006]

According to the present invention, there are provided (a) a compound represented by the following general formula (I):

Embedded image Wherein, in the formula, n represents an integer of 2 to 16; a polycarboxylic acid film obtained by reacting a tetracarboxylic dianhydride containing an acid dianhydride with (b) a diamine; Is a polyimide resin film obtained by dehydration and ring closure, wherein the polyimide resin has a glass transition temperature of 30% or more.
The present invention relates to a semiconductor device having a film heat-treated at a temperature of 0 ° C. or more as an interlayer insulating film and / or a surface protective film of a semiconductor substrate.

The present invention also relates to (a) a compound represented by the general formula (I):

Embedded image Wherein n represents an integer of 2 to 16; and a polyamic acid solution obtained by reacting a tetracarboxylic dianhydride containing an acid dianhydride with (b) a diamine is applied to form a resin film. Is formed thereon, a resist film is formed thereon, and then exposure, development and peeling of the resist film are performed. Thereafter, the polyamic acid is dehydrated and ring-closed, and the glass transition temperature of the polyimide resin finally obtained is equal to or higher than 300 ° C. The present invention relates to a method for manufacturing a semiconductor device, comprising forming a polyimide resin interlayer insulating film and / or a surface protection film by performing a heat treatment at a temperature of not less than ° C.

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION Examples of the acid dianhydride represented by the general formula (I) used as the component (a) include tetramethylene bistrimellitate dianhydride, pentamethylene bistrimellitate dianhydride, and hexamethylene bistrimellitate dianhydride. Methylene bis trimellitate dianhydride, heptamethylene bis trimellitate dianhydride, octamethylene bis trimellitate dianhydride, nonamethylene bis trimellitate dianhydride, decamethylene bis trimellitate dianhydride, dodecamethylene bis trimellitate dianhydride Anhydrides and the like. These can be used alone or in combination of two or more. These acid dianhydrides can be synthesized from trimellitic anhydride monochloride and the corresponding diol. As the acid anhydride represented by the general formula (I), those having n of 8 to 12 in the general formula (I) are preferable since they have a high effect of forming a film having a smooth surface. General formula (I)
The acid dianhydride represented by is preferably used in an amount of at least 30 mol% in all the tetracarboxylic dianhydrides in view of the effect of forming a film having a good shape and the chemical resistance, and is preferably used in an amount of 40 to 90 mol%. Is more preferable, and it is particularly preferable to use 50 to 80 mol%.

The component (a) includes the above-mentioned general formula (I)
Other acid dianhydrides may be used in combination with the acid dianhydride represented by Other acid dianhydrides include, for example, pyromellitic dianhydride, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride, 3,3', 4,4'-benzophenonetetracarboxylic acid Dianhydride, cyclopentanetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 2,3,5 6,6-pyridinetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 4,4'-sulfonyldi Aromatic tetracarboxylic dianhydrides such as phthalic dianhydride are preferred. These can be used alone or in combination of two or more. These other acid dianhydrides may be used in a range of 70 mol% or less of the total acid dianhydride, and the curing temperature of the polyamic acid (imidation completion temperature)
From the viewpoint of chemical resistance, 10 to 60 mol%
It is more preferable to use them in combination, and it is particularly preferable to use 20 to 50 mol%. Among these other acid dianhydrides,
Benzophenone tetracarboxylic dianhydride and pyromellitic dianhydride are more preferred because they lower the glass transition temperature and can form a film having a good shape by heat treatment.

The diamine used as the component (b) in the present invention includes 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, and 4,4'-diamine.
Aromatic diamines such as diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfide, benzidine, metaphenylenediamine, paraphenylenediamine, 1,5-naphthalenediamine, and 2,6-naphthalenediamine are preferred. Can be used alone or in combination of two or more.

In addition, if necessary, the compound represented by the general formula (II)

Embedded image [Wherein R ¹ and R ⁶ are each independently a divalent hydrocarbon group (eg, an alkylene group having 1 to 4 carbon atoms, a phenylene group, a phenylene group substituted with an alkyl group having 1 to 4 carbon atoms, etc.)] Wherein R ² , R ³ , R ⁴ and R ⁵ are each independently a monovalent hydrocarbon group (for example, an alkyl group having 1 to 4 carbon atoms,
And m represents an integer of 1 or more.] Can be used as a part of the diamine. Specific examples of these diaminosiloxanes include compounds represented by the following formula.

[0012]

Embedded image When these are used, it is preferable to use 1 to 10 mol% in terms of film properties and adhesion to all diamine components,
It is more preferable to use 3 to 5 mol%.

Furthermore, a diaminoamide compound may be used as a part of the diamine. Specific examples of this compound include 4,4-diaminodiphenylether-3-sulfonamide and 3,4'-diaminodiphenylether-4.
-Sulfonamide, 3,4'-diaminodiphenylether-3'-sulfonamide, 3,3'-diaminodiphenylether-4-sulfonamide, 4,4'-diaminodiphenylmethane-3-sulfonamide, 3,4 '
-Diaminodiphenylmethane-4-sulfonamide,
3,4'-diaminodiphenylmethane-3'-sulfonamide, 3,3'-diaminodiphenylmethane-4-sulfonamide, 4,4'-diaminodiphenylsulfone-3-sulfonamide, 3,4'-diaminodiphenylsulfone- 4-sulfonamide, 3,4'-diaminodiphenylsulfone-3'-sulfonamide, 3,3'-
Diaminodiphenylsulfone-4-sulfonamide,
4,4'-diaminodiphenylsulfide-3-sulfonamide, 3,4'-diaminodiphenylsulfide-4-sulfonamide, 3,3'-diaminodiphenylsulfide-4-sulfonamide, 3,4'-diaminodiphenylsulfide -3'-sulfonamide,
1,4-diaminobenzene-2-sulfonamide, 4,
4'-diaminodiphenyl ether-3-carbonamide, 3,4'-diaminodiphenyl ether-4-carbonamide, 3,4-diaminodiphenyl ether-
3'-carbonamide, 3,3'-diaminodiphenylether-4-carbonamide, 4,4'-diaminodiphenylmethane-3-carbonamide, 3,4'-diaminodiphenylmethane-4-carbonamide, 3,4 '
-Diaminodiphenylmethane-3'-carbonamide,
3,3'-diaminodiphenylmethane-4-carbonamide, 4,4'-diaminodiphenylsulfone-3-carbonamide, 3,4'-diaminodiphenylsulfone-4-carbonamide, 3,4'-diaminodiphenylsulfone- 3'-carbonamide, 3,3'-diaminodiphenylsulfone-4-carbonamide, 4,4'-
Diaminodiphenyl sulfide-3-carbonamide, 3,4'-diaminodiphenyl sulfide-4-
Carbonamide, 3,3'-diaminodiphenylsulfide-4-carbonamide, 3,4'-diaminodiphenylsulfide-4-carbonamide, 3,3'-
Diaminodiphenyl sulfide-4-carbonamide, 3,4'-diaminodiphenyl sulfide-3 '
-Sulfonamide, 1,4-diaminobenzene-2-carbonamide and the like.

These diaminoamide compounds can be used alone or in combination of two or more. When these are used, they are preferably used in an amount of 3 to 20 mol%, more preferably 5 to 10 mol%, based on all diamine components.

The polyamic acid used in the present invention comprises an acid dianhydride as the component (a) and a diamine as the component (b),
Usually, it is obtained by reacting in an organic polar solvent in equimolar or almost equimolar. Examples of the organic polar solvent include N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, N, N-diethylformamide, dimethylsulfoxide, hexamethylphosphoramide, tetramethylenesulfone, Examples thereof include γ-butyrolactone, N-vinyl-pyrrolidone, diisobutyl ketone, and butyl cellosolve acetate, and one or more of these are used. In the reaction, the diamine component is dissolved well in the organic polar solvent, and then the acid component is added.
It is carried out with stirring at a temperature of ° C.

The semiconductor device of the present invention is obtained by forming a polyimide resin film obtained by dehydrating and cyclizing the polyamic acid obtained as described above by heat treatment as an interlayer insulating film and / or a surface protective film of a semiconductor substrate. Things. Specifically, first, the polyamic acid solution is adjusted to an appropriate viscosity for use, preferably 70 to 90 poise (25 ° C.), then spin-coated on a semiconductor substrate, and preferably 80 to 150 ° C. using a hot plate or the like. Pre-bake at a temperature in the range of 60 seconds to 10 minutes. Next, a photoresist film is formed thereon. The photoresist is not particularly limited, and for example, a mixture of novolak resin and naphthoquinonediazide is used, and commercially available products are OFPR-5000 (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.), RI-7912P
(Trade name, manufactured by Hitachi Chemical Co., Ltd.).

Next, the photoresist film is exposed through a photomask. Exposure includes ultraviolet light, electron beam,
Active rays such as X-rays are used, and examples of the apparatus include a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, and a g-ray stepper. For example, 25 g with a g-line stepper (FPA1550, manufactured by Canon Inc.)
It can be performed under the condition of 0 mJ / cm ² . Develop after exposure.
For example, a pattern is formed by continuously developing a photoresist and etching a partially dehydrated and closed polyamic acid film (hereinafter, referred to as a polyimide resin film for convenience) by a paddle method using an alkali developer. As the alkali developer, an aqueous solution of tetramethylammonium hydroxide,
For example, commercially available NMD-3 (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.) and the like can be mentioned. Next, only the photoresist film is etched, and a photoresist stripper that does not adversely affect the polyimide resin film, for example, n-butyl acetate or the like is applied by a spray method or the like to remove the photoresist film.

Next, the polyimide resin film on which the pattern is formed is completely dehydrated and ring-closed. At the same time, in order to obtain a polyimide resin film capable of favorably forming a metal wiring having a smooth surface portion, the present invention is applied. Then, the glass transition temperature of the polyimide resin finally obtained (hereinafter, Tg
) And heat treatment at a temperature of 300 ° C. or more. The polyimide resin obtained in the present invention is preferably prepared to have a Tg of 200 to 350 ° C, more preferably 230 to 300 ° C. In the present invention, Tg is a value measured by a thermomechanical analyzer (TMA).

In the present invention, the polyimide resin T
Before heat treatment at a temperature of at least g, heat treatment at a temperature lower than that and a certain degree of ring closure by dehydration are preferred because stress on the substrate can be reduced. Specifically, the temperature is 15
The temperature is preferably from 0 to 250C, more preferably from 180 to 230C, and the time is preferably from 10 minutes to 2 hours, more preferably from 30 minutes to 1 hour. The final heat treatment is performed at a temperature of not less than Tg of the polyimide resin and not less than 300 ° C., whereby the solvent is removed, and the polyimide resin film is completely dehydrated and closed, and has a gentle pattern shape due to reflow properties. A resulting film is obtained. If the final heat treatment is lower than Tg of the polyimide resin or lower than 300 ° C., sufficient reflow properties cannot be obtained. The heat treatment temperature is specifically 3
The temperature is preferably from 00 to 450 ° C, more preferably from 300 to 400 ° C, and particularly preferably from 320 to 380 ° C. The treatment time is preferably 30 minutes to 3 hours, more preferably 30 minutes to 1 hour.

Next, the present invention will be described in more detail with reference to the drawings. FIG. 1 is a process diagram illustrating an example of a manufacturing process of a semiconductor device of the present invention. In FIG. 1A, aluminum (A) formed in a predetermined shape on a semiconductor substrate 1 is formed.
1), a part of the first conductor layer 2 is exposed to the inorganic insulating layer 3 (so-called passivation film) made of a silicon oxide film to form an electrode (bonding pad), and a polyimide resin film layer is formed on the semiconductor wafer. 4 are stacked. The polyimide resin film layer 4 is formed by spin-coating a polyamic acid solution on a semiconductor wafer, removing the solvent by heat treatment, and dehydrating and closing a part of the solvent. For example, a phenol novolak-based positive resist layer 5 is formed on the polyimide-based resin film layer 4 by spin coating.

Next, as shown in FIG. 1B, the positive resist layer 5 is formed by a known photolithography technique, for example, a chemical etching means using an aqueous solution of an organic alkali such as a tetramethylammonium hydroxide solution as an etching solution. Is continuously performed and the pattern 6 is selectively formed in a predetermined portion, and the Al bonding pad portion is completely exposed. Thereafter, the positive resist layer 5 is completely removed with a stripping solution such as an organic solvent so as not to dissolve the polyimide resin film layer 4 or cause damage such as cracks. At this time, the pattern surface portion 7 is as shown in FIG.
The shape is as shown in FIG.

The polyimide resin film layer 4 is heated at a temperature lower than Tg, for example, 200 to 250 ° C. for 1 hour or less, and then at a temperature higher than Tg and 300 ° C. or higher, for example,
When heat treatment is performed at a temperature in the range of 400 ° C. for 3 hours or less, and the ring is completely dehydrated and closed, the surface portion 7a of the pattern 6 has a reflow property and has a gentle shape as shown in FIG. Further, as shown in FIG. 1E, a second conductor layer 8 made of nickel, gold, aluminum or the like is formed by using a known metal film forming method such as a sputter plating method and a photolithography technique. The electrical connection with one conductor layer 2 is made completely.

When a multilayer wiring structure having three or more layers is formed, the above steps are repeated to form each layer. That is, an interlayer insulating film serving as a conductor layer and an insulating layer of the conductor layer and a surface protective film serving as a protective layer of the conductor layer can be obtained by repeating the above method. In the semiconductor device of the present invention, the above-mentioned polyimide resin film may be used for only interlayer insulation or surface protection of the semiconductor device, or may be used for both interlayer insulation and surface protection of the semiconductor device. Thereafter, a semiconductor device can be obtained through a wire bonding step, a sealing step using a sealing resin, and the like.

[0024]

Next, the present invention will be described in more detail by way of examples, which should not be construed as limiting the present invention. Example 1 In a three-necked flask equipped with a thermometer, stirrer and calcium chloride tube, 4,4'-diaminodiphenyl ether 5
4.05 g (0.27 mol) and 1.45 g (0.15 g) of 1,3-bis (aminopropyl) tetramethyldisiloxane.
03 mol) in 800 g of N-methyl-2-pyrrolidone and thoroughly stirred and dissolved, and then 3,3 ', 4,4'-
48.33 g of benzophenonetetracarboxylic dianhydride
(0.15 mol) and 74.10 g (0.15 mol) of octamethylene bistrimellitate dianhydride were gradually added. After the addition, stirring was continued for 6 hours at 5 ° C., and then the reaction was continued for 8 hours at 80 ° C. to obtain a viscosity of 80 poise (25 ° C.).
Value) and a polyamic acid solution having a resin concentration of 18.6% by weight.

This solution is used in the step of FIG.
After spin coating at 2000 rpm for 30 seconds using a coater (manufactured by Dainippon Screen Mfg. Co., Ltd., SC-W80A) on the semiconductor substrate 1 on which the first conductor layer 2 made of Al and the inorganic insulating layer 3 are formed, 100 ° C in plate
And a heat treatment (pre-bake) at 115 ° C. for 60 seconds to form a 13 μm-thick polyimide-based resin film layer 4 as a surface protective film layer. Next, a phenol novolak resin-based photosensitive resin (positive photoresist, trade name OFPR-5000,
(Manufactured by Tokyo Ohka Kogyo Co., Ltd.) was spin-coated at 2800 rpm to form a positive resist layer 5.

Next, in the step of FIG. 1B, in order to selectively remove only the bonding pad portion and the scribe line, which are predetermined portions of the polyimide resin film layer 4,
After exposing a via hole size of 100 μm square and a scribe line width size of 70 μm by photolithography to dissolve the irradiated surface, a tetramethylammonium hydroxide aqueous solution-based developer (trade name: NMD-3, manufactured by Tokyo Ohka Kogyo Co., Ltd.)
Is used as an etching solution, the development of the positive resist layer 5 and the etching of the polyimide-based resin film layer 4 are continuously performed at 23 ° C. for 110 seconds to form a pattern 6 on the polyimide-based resin film layer 4. The bonding pad portion as the layer 2 was exposed. The exposed bonding pad portion is 130
It has an area of μm × 130 μm. The bottom of the pattern 6 of the polyimide resin film layer 4 is 100 μm × 1
It has a size of 00 μm.

Next, in the step of FIG. 1C, only the positive resist layer 5 is etched without causing corrosion of the bonding pad portion where the first conductor layer 2 is exposed and cracks in the polyimide resin film layer 4. A resist stripping solution (n-butyl acetate) to be engraved is dropped on the entire surface of the wafer by a spray nozzle, and treated at room temperature for 90 seconds to form a positive resist layer 5.
Was completely removed. Next, in the step of FIG.
Put into a hot air dryer, 200 ° C for 30 minutes, then 3
By heat-treating at 50 ° C. for 60 minutes, the surface protection film composed of the polyimide resin film layer 4 having a thickness of 8 μm was obtained in which the surface portion 7 a of the via hole pattern 6 was gentle and dehydrated and closed. The Tg of this polyimide resin was 235 ° C.

Next, in the step of FIG. 1 (e), a second conductor layer 8 (barrier metal) made of nickel having a thickness of 0.2 μm is formed by a known atmospheric pressure sputtering method and a photolithography technique. Then, electrical connection with the first conductor layer 2 was made to manufacture a semiconductor device. In the barrier metal formed on the surface protective film, no break was observed in the via hole pattern portion having a polyimide resin film thickness, and the barrier metal had a good shape.

Example 2 In Example 1, the acid dianhydride was changed to 26.16 g (0.12 mol) of pyromellitic dianhydride and 93.96 g (0.18 mol) of decamethylene bistrimellitic dianhydride. A polyamic acid solution was synthesized in the same manner as in Example 1 except that the mixture was changed to a mixture of the above. A via hole pattern was similarly formed using the polyamic acid solution, and a film thickness of 0 was formed on the heat-treated polyimide resin film by a vacuum evaporation method. A second conductor layer made of aluminum having a thickness of 0.8 μm was formed, and was electrically connected to the first conductor layer, whereby a semiconductor device was manufactured. The Tg of the polyimide resin obtained in this example was 276 ° C. The aluminum wiring formed on the polyimide resin film also showed a good shape in the via hole pattern portion.

Comparative Example 1 In Example 1, 32.71 g (0.15 mol) of pyromellitic anhydride and 3,3 ', 4,4'
-Benzophenonetetracarboxylic dianhydride 48.33
g (0.15 mol), except that a polyamic acid solution was synthesized in the same manner as in Example 1, and a via-hole pattern was formed using the polyamic acid solution. Although a base resin film layer was obtained, as shown in FIG. 2, a projection-like phenomenon occurred on the pattern surface portion 7b, so that the second conductor layer was disconnected at the via hole portion, and a favorable shape could not be obtained. Was. The Tg of this polyimide resin was 300 ° C.

Comparative Example 2 In Example 1 and Example 2, the final heat treatment after the pattern formation of the polyimide resin film was performed at 350 ° C. for 60 minutes.
A polyimide resin film layer was formed in the same manner as in Example 1 and Example 2 except that the temperature was changed to 80 ° C. for 60 minutes, but disconnection was observed in the second conductor layer as in Comparative Example 1. A good semiconductor device could not be manufactured.

[0032]

According to the first aspect of the present invention, there is provided a semiconductor device in which a projection-like film bulge is not formed on the pattern surface of the polyimide resin film, and a good metal wiring layer is formed on the resin film pattern. According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein a protruding film bulge is not formed on a pattern surface portion of a polyimide resin film, and a good metal wiring layer can be easily formed on the resin film pattern.

[Brief description of the drawings]

FIG. 1 is a process chart showing an example of a manufacturing process of a semiconductor device of the present invention.

FIG. 2 is a process chart showing an example of a conventional semiconductor device manufacturing process.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 semiconductor substrate 2 first conductor layer 3 inorganic insulating layer 4 polyimide resin film layer 5 positive resist layer 6 pattern 7 pattern surface portion 8 second conductor layer

Claims (2)

[Claims] (A) General formula (I) Wherein, in the formula, n represents an integer of 2 to 16; a polycarboxylic acid film obtained by reacting a tetracarboxylic dianhydride containing an acid dianhydride with (b) a diamine; Is a polyimide resin film obtained by dehydration and ring closure, wherein the polyimide resin has a glass transition temperature of 30% or more.
A semiconductor device having a film heat-treated at a temperature of 0 ° C. or more as an interlayer insulating film and / or a surface protective film of a semiconductor substrate. (A) General formula (I) Wherein, in the formula, n represents an integer of 2 to 16; a resin of a polyamic acid obtained by reacting a tetracarboxylic dianhydride containing an acid dianhydride with (b) a diamine; Form a film, form a resist film thereon, then perform exposure, development and peeling of the resist film, and then, while dehydrating and ring-closing the polyamic acid, and above the glass transition temperature of the finally obtained polyimide resin and Heat-treated at a temperature of 300 ° C. or more and an interlayer insulating film of polyimide resin and / or
Alternatively, a method for manufacturing a semiconductor device, comprising forming a surface protective film.