JPH10144779A - Electrostatic chuck - Google Patents
Electrostatic chuckInfo
- Publication number
- JPH10144779A JPH10144779A JP30318696A JP30318696A JPH10144779A JP H10144779 A JPH10144779 A JP H10144779A JP 30318696 A JP30318696 A JP 30318696A JP 30318696 A JP30318696 A JP 30318696A JP H10144779 A JPH10144779 A JP H10144779A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- surface insulating
- resistance
- electrostatic chuck
- ωcm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はＣＶＤやエッチング
等の半導体の製造行程やその他の処理、運搬において使
用される静電チャックに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck used in a semiconductor manufacturing process such as CVD and etching, and other processes and transportation.
【０００２】[0002]
【従来の技術】ＣＶＤやエッチング等の半導体の製造行
程においては、ウエハが真空チャンバ内で静電チャック
により保持され、種々の処理が行われる。チップのパタ
ーンの細分化によって、微細なゴミが問題視されるよう
になり、メカニカルなチャックによる発塵や処理時のゴ
ミが問題になっている。このような観点から静電チャッ
クの採用率が増えてきている。2. Description of the Related Art In a semiconductor manufacturing process such as CVD or etching, a wafer is held in a vacuum chamber by an electrostatic chuck and various processes are performed. Due to the segmentation of the chip pattern, fine dust is regarded as a problem, and dust generated by a mechanical chuck or dust during processing is becoming a problem. From such a viewpoint, the adoption rate of the electrostatic chuck is increasing.
【０００３】静電チャックは、基板と、電極を有する表
面絶縁層（誘電体）とを備え、ウエハを静電チャックに
吸着保させるときに、ウエハは表面絶縁層の上に載置さ
れる。ウエハは、ウエハと電極との間に作用するクーロ
ン力によって表面絶縁層に保持される。このような静電
チャックは例えば特開平７−１８４３８号公報に開示さ
れている。[0003] An electrostatic chuck includes a substrate and a surface insulating layer (dielectric) having electrodes, and the wafer is placed on the surface insulating layer when the wafer is held by the electrostatic chuck. The wafer is held on the surface insulating layer by the Coulomb force acting between the wafer and the electrode. Such an electrostatic chuck is disclosed, for example, in JP-A-7-18438.
【０００４】静電チャックの表面絶縁層は接着剤により
基板に接着される。例えば、表面絶縁層はセラミックで
作られ、基板はアルミニウムで作られ、表面絶縁層を基
板に接着するためにシリコン接着剤が使用される。半導
体の製造行程においては、ウエハはＣＶＤやエッチング
のために高温の処理室内で処理されることがあり、静電
チャックはウエハとともに高温にさらされる。シリコン
接着剤は表面絶縁層と基板の熱膨張差を吸収するために
は有効な接着剤である。[0004] The surface insulating layer of the electrostatic chuck is bonded to the substrate with an adhesive. For example, the surface insulating layer is made of ceramic, the substrate is made of aluminum, and a silicon adhesive is used to adhere the surface insulating layer to the substrate. In a semiconductor manufacturing process, a wafer may be processed in a high-temperature processing chamber for CVD or etching, and the electrostatic chuck is exposed to a high temperature together with the wafer. Silicon adhesive is an effective adhesive for absorbing the difference in thermal expansion between the surface insulating layer and the substrate.
【０００５】[0005]
【発明が解決しようとする課題】静電チャックは、通電
することにより吸着作用が生じ、通電を停止することに
より吸着作用がなくなる。通電を停止したら、直ちに吸
着作用がなくなってウエハを静電チャックから取り出す
ことができることが望ましい。しかし、表面絶縁層及び
接着剤層に電荷が蓄積されていると、通電を停止して
も、残留吸着作用が生じることがある。残留吸着作用
は、表面絶縁層及び接着剤層の体積固有抵抗の値によっ
て大きくなったり、小さくなったりする。残留吸着作用
が大きいと、ウエハを静電チャックから簡単に取り出す
ことができなくなる。そこで、ウエハを裏面からピンに
よって突き上げて、強制的にウエハを離脱させることが
ある。しかし、この場合には、ウエハの割れや、跳ね
や、放電等が発生し、歩留りが低下する問題点がある。In the electrostatic chuck, an energizing action causes an attraction action, and an electric power supply stops the attraction action. It is desirable that the suction operation be stopped immediately after the energization is stopped so that the wafer can be taken out of the electrostatic chuck. However, if electric charges are accumulated in the surface insulating layer and the adhesive layer, a residual adsorption effect may be generated even when the current supply is stopped. The residual adsorption action increases or decreases depending on the value of the volume resistivity of the surface insulating layer and the adhesive layer. If the residual suction action is large, the wafer cannot be easily removed from the electrostatic chuck. Therefore, there is a case where the wafer is pushed up from the back surface by the pins and the wafer is forcibly detached. However, in this case, there is a problem that cracking, bouncing, discharging, or the like of the wafer occurs, and the yield decreases.
【０００６】また、ウエハの裏面からガスを吹き出して
ウエハを離脱させたり、離脱時に処理とは別に再度短時
間プラズマを起こし、残留電荷の除去を行ったりする試
みがある。しかし、これらの方法では、スループットの
低下を招く。さらに、シリコン接着剤によって表面絶縁
層を基板に接着する構成においては、例えばエッチング
処理（特に等方性エッチング）において、シリコン接着
剤がエッチングされてしまい、寿命が短くなるととも
に、絶縁破壊を引き起こす原因になることがある。この
ため、静電チャック全体をセラミックで作る等の試みが
なされているが、この方式では熱伝導性が極端に悪く、
価格も高くなるという問題点があった。[0006] Further, there is an attempt to blow out gas from the back surface of the wafer to separate the wafer, or to generate plasma again for a short time separately from the processing at the time of separation to remove residual charges. However, these methods cause a decrease in throughput. Further, in a configuration in which the surface insulating layer is bonded to the substrate with a silicon adhesive, the silicon adhesive is etched in, for example, an etching process (especially isotropic etching), thereby shortening the life and causing dielectric breakdown. It may be. For this reason, attempts have been made to make the entire electrostatic chuck from ceramics, but this method has extremely poor thermal conductivity,
There was a problem that the price became high.
【０００７】本発明の目的は、残留吸着作用を低減で
き、且つ長寿命の静電チャックを提供することである。An object of the present invention is to provide a long-life electrostatic chuck capable of reducing the residual suction action.
【０００８】[0008]
【課題を解決するための手段】本発明による静電チャッ
クは、基板と、電極を有する表面絶縁層と、該表面絶縁
層と該基板とを接着する接着剤層とを備え、該接着剤層
は該表面絶縁層と同等の抵抗をもつセラミック系の接着
剤からなることを特徴とする。この構成においては、セ
ラミック系の接着剤がエッチング等により損傷されにく
く、長寿命の静電チャックを提供することができる。ま
た、セラミック系の接着剤はその含有成分の調整によ
り、その体積固有抵抗を制御することができる。従っ
て、接着剤層は表面絶縁層と同等の抵抗をもつようにす
る。これによって、表面絶縁層と接着剤層とが、残留吸
着作用を低減又は生じさせないような体積固有抵抗をも
つように設定され、よって残留吸着作用を低減又は解消
することができる。また、セラミック系接着剤は熱伝導
性のよいものを選ぶのが好ましい。The electrostatic chuck according to the present invention comprises a substrate, a surface insulating layer having electrodes, and an adhesive layer for bonding the surface insulating layer and the substrate. Is made of a ceramic adhesive having the same resistance as the surface insulating layer. In this configuration, the ceramic adhesive is hardly damaged by etching or the like, and a long-life electrostatic chuck can be provided. Further, the volume specific resistance of the ceramic adhesive can be controlled by adjusting the contained components. Therefore, the adhesive layer has the same resistance as the surface insulating layer. Thereby, the surface insulating layer and the adhesive layer are set to have a volume specific resistance that does not reduce or cause the residual adsorption effect, and thus the residual adsorption effect can be reduced or eliminated. Further, it is preferable to select a ceramic adhesive having good heat conductivity.
【０００９】請求項２においては、該表面絶縁層が高抵
抗型のセラミックからなり、該接着剤層が該表面絶縁層
と同等の高い抵抗をもつようにする。例えば、このとき
の体積固有抵抗は１０14Ωcm以上である。請求項３にお
いては、該表面絶縁層が低抵抗型のセラミックからな
り、該接着剤層が該表面絶縁層と同等の低い抵抗をもつ
ようにする。例えば、このときの体積固有抵抗は１０8
Ωcmから１０11Ωcm程度である。体積固有抵抗が１０8
Ωcm以下のものは、静電的には導通みなされ、あまり用
いられない。体積固有抵抗が１０11Ωcmから１０14Ωcm
の間にあると、残留吸着作用が発生しやすい。In the present invention, the surface insulating layer is made of a high-resistance ceramic, and the adhesive layer has a high resistance equivalent to that of the surface insulating layer. For example, the volume resistivity at this time is 10 14 Ωcm or more. In the third aspect, the surface insulating layer is made of a low-resistance ceramic, and the adhesive layer has a low resistance equivalent to that of the surface insulating layer. For example, the volume resistivity at this time is 10 8
Ωcm to about 10 11 Ωcm. Volume resistivity is 10 8
Those having a resistance of less than Ωcm are regarded as conductive and are rarely used. Volume resistivity from 10 11 Ωcm to 10 14 Ωcm
If it is between the two, the residual adsorption action is likely to occur.
【００１０】また、請求項４に記載の静電チャックは、
基板と、電極を有する表面絶縁層と、該表面絶縁層と該
基板とを接着する接着剤層と、該表面絶縁層と該基板と
の間で該接着剤層を取り囲むシールとからなることを特
徴とする。この構成では、接着剤層がシールによって取
り囲まれ、このシールがエッチング等により損傷されに
くい材料で形成されるので、接着剤層が損傷しない。従
って、静電チャックの寿命は低下しない。The electrostatic chuck according to claim 4 is
A substrate, a surface insulating layer having electrodes, an adhesive layer for bonding the surface insulating layer and the substrate, and a seal surrounding the adhesive layer between the surface insulating layer and the substrate. Features. In this configuration, the adhesive layer is surrounded by the seal, and the seal is formed of a material that is not easily damaged by etching or the like, so that the adhesive layer is not damaged. Therefore, the life of the electrostatic chuck does not decrease.
【００１１】[0011]
【発明の実施の形態】以下本発明の実施例について説明
する。図１は本発明の第１実施例の静電チャック１０を
示す図である。静電チャック１０は、アルミニウムの基
板１２と、円板状のセラミックの表面絶縁層１４とから
なる。この表面絶縁層１４は平坦な円板状の電極１６
ａ，１６ｂを有する。各電極１６ａ，１６ｂは例えば半
円形状、あるいは櫛歯状に形成されることができる。電
極１６ａ，１６ｂは例えば蒸着により表面絶縁層１４の
表面に設けられ、導線１８，２０により電源に接続され
る。ウエハＷは表面絶縁層１４にのせられ、クーロン力
により静電チャック１０に保持される。Embodiments of the present invention will be described below. FIG. 1 is a view showing an electrostatic chuck 10 according to a first embodiment of the present invention. The electrostatic chuck 10 includes an aluminum substrate 12 and a disc-shaped ceramic surface insulating layer 14. This surface insulating layer 14 is a flat disk-shaped electrode 16.
a and 16b. Each of the electrodes 16a and 16b can be formed, for example, in a semicircular shape or a comb shape. The electrodes 16a and 16b are provided on the surface of the surface insulating layer 14 by, for example, vapor deposition, and are connected to a power supply by conducting wires 18 and 20. The wafer W is placed on the surface insulating layer 14 and held on the electrostatic chuck 10 by Coulomb force.
【００１２】表面絶縁層１４は接着剤層２２により基板
１２に接着されている。接着剤層２２は表面絶縁層１４
と同等の抵抗をもつセラミック系の接着剤（例えばジル
コニア、マグネシア、アルミナベースのもの）からな
る。例えば、表面絶縁層１４が体積固有抵抗が１０14Ω
cm以上の高抵抗型のセラミックからなる場合には、接着
剤層２２も体積固有抵抗が１０14Ωcm以上の表面絶縁層
１４と同等の抵抗をもつようにする。また、表面絶縁層
１４が体積固有抵抗が１０8 Ωcmから１０11Ωcmの範囲
にある低抵抗型のセラミックからなる場合には、接着剤
層２２も体積固有抵抗が１０8 Ωcmから１０11Ωcmの範
囲にある表面絶縁層１４と同等の抵抗をもつようにす
る。The surface insulating layer 14 is bonded to the substrate 12 by an adhesive layer 22. The adhesive layer 22 is formed on the surface insulating layer 14.
It is made of a ceramic adhesive (for example, one based on zirconia, magnesia, or alumina) having a resistance equivalent to that of. For example, the surface insulating layer 14 has a volume resistivity of 10 14 Ω.
In the case of a high-resistance type ceramic having a volume resistivity of at least 10 cm, the adhesive layer 22 also has a resistance equivalent to that of the surface insulating layer 14 having a volume resistivity of at least 10 14 Ωcm. When the surface insulating layer 14 is made of a low-resistance ceramic having a volume resistivity in the range of 10 8 Ωcm to 10 11 Ωcm, the adhesive layer 22 also has a volume resistivity of 10 8 Ωcm to 10 11 Ωcm. The resistance is set equal to that of the surface insulating layer 14 in the range.
【００１３】図２は本発明の第２実施例の静電チャック
１０を示す図である。静電チャック１０は、アルミニウ
ムの基板１２と、円板状のセラミックの表面絶縁層１４
とからなる。この表面絶縁層１４は電極１６ａ，１６ｂ
を有し、電極１６ａ，１６ｂは表面絶縁層１４の内部に
埋設されている。例えば、２枚のセラミックのグリーン
シートを準備し、一方のグリーンシートに電極１６ａ，
１６ｂを蒸着しておき、２枚のグリーンシートを重ねて
焼成すれば、この構成の表面絶縁層１４を得ることがで
きる。電極１６ａ，１６ｂは導線１８，２０により電源
に接続される。この場合にも、表面絶縁層１４は接着剤
層２２により基板１２に接着され、接着剤層２２は表面
絶縁層１４と同等の抵抗をもつセラミック系の接着剤か
らなる。FIG. 2 is a view showing an electrostatic chuck 10 according to a second embodiment of the present invention. The electrostatic chuck 10 includes an aluminum substrate 12 and a disc-shaped ceramic surface insulating layer 14.
Consists of The surface insulating layer 14 has electrodes 16a, 16b
And the electrodes 16 a and 16 b are embedded in the surface insulating layer 14. For example, two ceramic green sheets are prepared, and one of the green sheets has electrodes 16a,
By depositing 16b and depositing and firing two green sheets, the surface insulating layer 14 having this configuration can be obtained. The electrodes 16a and 16b are connected to a power supply by wires 18 and 20. Also in this case, the surface insulating layer 14 is bonded to the substrate 12 by the adhesive layer 22, and the adhesive layer 22 is made of a ceramic adhesive having the same resistance as the surface insulating layer 14.
【００１４】図３は本発明の第３実施例の静電チャック
１０を示す図である。静電チャック１０は、アルミニウ
ムの基板１２と、円板状のセラミックの表面絶縁層１４
とからなる。この表面絶縁層１４は平坦な１つの円板状
の電極１６を有し、電極１６が図１と同様に表面絶縁層
１４の表面に蒸着されている。電極１６は導線１８によ
り電源に接続される。この場合にも、表面絶縁層１４は
接着剤層２２により基板１２に接着され、接着剤層２２
は表面絶縁層１４と同等の抵抗をもつセラミック系の接
着剤からなる。FIG. 3 is a view showing an electrostatic chuck 10 according to a third embodiment of the present invention. The electrostatic chuck 10 includes an aluminum substrate 12 and a disc-shaped ceramic surface insulating layer 14.
Consists of The surface insulating layer 14 has one flat disk-shaped electrode 16, and the electrode 16 is deposited on the surface of the surface insulating layer 14 as in FIG. 1. The electrode 16 is connected to a power supply by a conductor 18. Also in this case, the surface insulating layer 14 is bonded to the substrate 12 by the adhesive layer 22 and the adhesive layer 22
Is made of a ceramic adhesive having the same resistance as the surface insulating layer 14.
【００１５】図４は本発明の第４実施例の静電チャック
１０を示す図である。静電チャック１０は、アルミニウ
ムの基板１２と、円板状のセラミックの表面絶縁層１４
とからなる。この表面絶縁層１４は平坦な１つの円板状
の電極１６を有し、電極１６が図２と同様に表面絶縁層
１４の内部に埋設されている。電極１６は導線１８によ
り電源に接続される。この場合にも、表面絶縁層１４は
接着剤層２２により基板１２に接着され、接着剤層２２
は表面絶縁層１４と同等の抵抗をもつセラミック系の接
着剤からなる。FIG. 4 is a view showing an electrostatic chuck 10 according to a fourth embodiment of the present invention. The electrostatic chuck 10 includes an aluminum substrate 12 and a disc-shaped ceramic surface insulating layer 14.
Consists of The surface insulating layer 14 has one flat disk-shaped electrode 16, and the electrode 16 is buried inside the surface insulating layer 14 as in FIG. The electrode 16 is connected to a power supply by a conductor 18. Also in this case, the surface insulating layer 14 is bonded to the substrate 12 by the adhesive layer 22 and the adhesive layer 22
Is made of a ceramic adhesive having the same resistance as the surface insulating layer 14.
【００１６】図５は本発明の第５実施例の静電チャック
１０を示す図である。静電チャック１０は、アルミニウ
ムの基板１２と、円板状のセラミックの表面絶縁層１４
とからなる。この表面絶縁層１４は平坦な１つの円板状
の電極１６あるいは２つの電極１６ａ，１６ｂを有す
る。電極１６，１６ａ，１６ｂは導線により電源に接続
される。FIG. 5 is a view showing an electrostatic chuck 10 according to a fifth embodiment of the present invention. The electrostatic chuck 10 includes an aluminum substrate 12 and a disc-shaped ceramic surface insulating layer 14.
Consists of The surface insulating layer 14 has one flat disk-shaped electrode 16 or two electrodes 16a and 16b. The electrodes 16, 16a, 16b are connected to a power supply by conducting wires.
【００１７】この場合にも、表面絶縁層１４は接着剤層
２２により基板１２に接着され、接着剤層２２は表面絶
縁層１４と同等の抵抗をもつセラミック系の接着剤から
なる。また、サイドシール２４が表面絶縁層１４と基板
１２との間で接着剤層２２を取り囲むように設けられ
る。サイドシール２４は、この静電チャック１０に保持
されたウエハをエッチングする際にエッチングされない
材料で形成されている。Also in this case, the surface insulating layer 14 is adhered to the substrate 12 by the adhesive layer 22, and the adhesive layer 22 is made of a ceramic adhesive having the same resistance as the surface insulating layer 14. A side seal 24 is provided between the surface insulating layer 14 and the substrate 12 so as to surround the adhesive layer 22. The side seal 24 is formed of a material that is not etched when etching the wafer held on the electrostatic chuck 10.
【００１８】図６は上記各実施例において、表面絶縁層
１４が体積固有抵抗が１０14Ωcm以上の高抵抗型のセラ
ミック（例えばＡｌ2 Ｏ3 ，ＭｇＯ，ＳｉＯ2 ，ＣａＯ
を含むもの）からなる場合を示す図である。接着剤層２
２も体積固有抵抗が１０14Ωcm以上の表面絶縁層１４と
同等の抵抗をもつようにする。この場合には、表面絶縁
層１４及び接着剤層２２の抵抗が非常に高いために、微
小な電流も流れず、表面絶縁層１４及び接着剤層２２に
電荷が蓄積されない。従って、電極１６，１６ａ，１６
ｂへの通電を停止したときに、残留吸着作用は生じず、
通電停止と同時に静電チャック１０の吸着力はなくなっ
てウエハを取り出すことができる。FIG. 6 shows that in each of the above-described embodiments, the surface insulating layer 14 is made of a high-resistance ceramic (for example, Al 2 O 3 , MgO, SiO 2 , CaO) having a volume resistivity of 10 14 Ωcm or more.
FIG. Adhesive layer 2
2 also has the same resistance as the surface insulating layer 14 having a volume resistivity of 10 14 Ωcm or more. In this case, since the resistance of the surface insulating layer 14 and the adhesive layer 22 is extremely high, a minute current does not flow, and no charge is accumulated in the surface insulating layer 14 and the adhesive layer 22. Therefore, the electrodes 16, 16a, 16
When the power supply to b is stopped, no residual adsorption action occurs,
At the same time when the power supply is stopped, the chucking force of the electrostatic chuck 10 disappears, and the wafer can be taken out.
【００１９】図７は上記各実施例において、表面絶縁層
１４が体積固有抵抗が１０8 Ωcmから１０11Ωcmの範囲
にある低抵抗型のセラミック（例えばＡｌ2 Ｏ3 ，Ｍｇ
Ｏ，ＳｉＯ2 ，ＣａＯ，ＴｉＯ2 ，Ｃｒ2 Ｏ2 を含むも
の）からなる場合を示す図である。接着剤層２２も体積
固有抵抗が１０8 Ωcmから１０11Ωcmの範囲にある表面
絶縁層１４と同等の抵抗をもつようにする。FIG. 7 shows that in each of the above embodiments, the surface insulating layer 14 is made of a low-resistance ceramic (for example, Al 2 O 3 , Mg) having a volume resistivity in the range of 10 8 Ωcm to 10 11 Ωcm.
FIG. 3 is a diagram showing a case of a material including O, SiO 2 , CaO, TiO 2 , and Cr 2 O 2 ). The adhesive layer 22 also has a resistance equivalent to that of the surface insulating layer 14 having a volume resistivity in the range of 10 8 Ωcm to 10 11 Ωcm.
【００２０】この場合には、表面絶縁層１４及び接着剤
層２２の抵抗が比較的に低いために、微小な電流が流
れ、表面絶縁層１４及び接着剤層２２に電荷が蓄積され
る。蓄積された電荷は吸着界面でジョンソンラーベック
力として作用し、ケーロン力と合わせて、強力な吸着力
を及ぼす。そして、通電を停止したときには、表面絶縁
層１４及び接着剤層２２の体積固有抵抗が１０8 Ωcmか
ら１０11Ωcmの範囲にあると、微小な電流は比較的に流
れやすいので、蓄積されていた電荷が容易に抜けてい
き、残留吸着作用はほとんどない。In this case, since the resistance of the surface insulating layer 14 and the adhesive layer 22 is relatively low, a minute current flows, and electric charges are accumulated in the surface insulating layer 14 and the adhesive layer 22. The accumulated charge acts as a Johnson-Rahbek force at the adsorption interface, and exerts a strong adsorption force together with the Coulomb force. When the energization was stopped, if the volume resistivity of the surface insulating layer 14 and the adhesive layer 22 was in the range of 10 8 Ωcm to 10 11 Ωcm, the minute current was relatively easy to flow and was accumulated. The charge is easily released, and there is almost no residual adsorption action.
【００２１】表面絶縁層１４及び接着剤層２２、または
それらの一方の体積固有抵抗が１０ 11Ωcmから１０14Ω
cmの範囲にあると、微小な電流は流れることができて、
残留電荷が蓄積され、そして、通電を停止したときに
は、蓄積されていた電荷が抜けにくく、残留吸着作用が
生じる。図８は、温度と体積固有抵抗との関係を示す図
である。線Ｘは表面絶縁層１４に使用されるセラミック
の性質の一例を示す図である。表面絶縁層１４に使用さ
れるセラミックは、温度が高くなると体積固有抵抗が低
下する性質がある。従って、使用目的に応じてセラミッ
クの種類を選択する必要がある。体積固有抵抗が１０14
Ωcm以上で、微小電流が流れない、高抵抗型のセラミッ
クは、低温領域で使用するのに適している。体積固有抵
抗が１０8 Ωcmから１０11Ωcmの範囲にある、電荷の抜
けがいい、低高抵抗型のセラミックは、高温領域で使用
するのに適している。体積固有抵抗が１０8 Ωcmから１
０11Ωcmの範囲にある場合には、電荷が残留しやすく、
残留吸着作用があるので、ウエハを静電チャックから取
り出す場合には、補助の離脱手段を使用する必要があ
る。The surface insulating layer 14 and the adhesive layer 22, or
One of them has a volume resistivity of 10 11Ωcm to 1014Ω
When it is in the range of cm, a small current can flow,
When the residual charge is accumulated and
Is difficult to remove the accumulated charge,
Occurs. FIG. 8 is a diagram showing a relationship between temperature and volume resistivity.
It is. Line X is a ceramic used for surface insulating layer 14
FIG. 4 is a diagram illustrating an example of the property of the scalar. Used for surface insulating layer 14
Ceramics have lower volume resistivity at higher temperatures.
There is a property to fall. Therefore, depending on the purpose of use,
You need to select the type of work. Volume resistivity is 1014
Ωcm or more, a high-resistance ceramic
Is suitable for use in the low temperature range. Volume specific resistance
Anti 108Ωcm to 1011Within the Ωcm range.
Good injuries, low and high resistance type ceramics are used in high temperature range
Suitable to do. Volume resistivity is 1081 from Ωcm
011When it is within the range of Ωcm, the charge is likely to remain,
Since there is a residual suction action, remove the wafer from the electrostatic chuck.
Use a separate release means.
You.
【００２２】以上は本発明を半導体製造用の静電チャッ
クを例として説明したが、本発明は半導体製造用の静電
チャックに限定されるものではない。吸着するものとし
てはウエハに限定されるものでもない。例えば、ウエハ
に限らず、その他の物品を搬送する搬送手段や、加熱、
冷却装置等に設けた静電チャックとしてもよい。Although the present invention has been described with reference to the electrostatic chuck for manufacturing semiconductors as an example, the present invention is not limited to electrostatic chucks for manufacturing semiconductors. What is adsorbed is not limited to the wafer. For example, not only wafers, but also transport means for transporting other articles, heating,
It may be an electrostatic chuck provided in a cooling device or the like.
【００２３】[0023]
【発明の効果】以上説明したように、本発明によれば、
残留吸着作用を低減でき、且つ長寿命の静電チャックを
得ることができる。As described above, according to the present invention,
The residual chucking action can be reduced, and a long-life electrostatic chuck can be obtained.
【図１】本発明の実施例の静電チャックを示す断面図で
ある。FIG. 1 is a sectional view showing an electrostatic chuck according to an embodiment of the present invention.
【図２】本発明の他の実施例の静電チャックを示す断面
図である。FIG. 2 is a sectional view showing an electrostatic chuck according to another embodiment of the present invention.
【図３】本発明の他の実施例の静電チャックを示す断面
図である。FIG. 3 is a sectional view showing an electrostatic chuck according to another embodiment of the present invention.
【図４】本発明の他の実施例の静電チャックを示す断面
図である。FIG. 4 is a sectional view showing an electrostatic chuck according to another embodiment of the present invention.
【図５】本発明の他の実施例の静電チャックを示す断面
図である。FIG. 5 is a sectional view showing an electrostatic chuck according to another embodiment of the present invention.
【図６】高抵抗型の表面絶縁層を使用した場合の静電チ
ャックを示す図である。FIG. 6 is a diagram showing an electrostatic chuck when a high-resistance surface insulating layer is used.
【図７】低抵抗型の表面絶縁層を使用した場合の静電チ
ャックを示す図である。FIG. 7 is a diagram showing an electrostatic chuck when a low-resistance surface insulating layer is used.
【図８】表面絶縁層を形成するセラミックの温度と抵抗
の関係を示す図である。FIG. 8 is a diagram showing a relationship between temperature and resistance of a ceramic forming a surface insulating layer.
１０…静電チャック １２…基板 １４…表面絶縁層 １６，１６ａ，１６ｂ…電極 ２２…接着剤層 Reference Signs List 10 electrostatic chuck 12 substrate 14 surface insulating layer 16, 16a, 16b electrode 22 adhesive layer
Claims (4)
表面絶縁層と該基板とを接着する接着剤層とを備え、該
接着剤層は該表面絶縁層と同等の抵抗をもつセラミック
系の接着剤からなることを特徴とする静電チャック。1. A ceramic having a substrate, a surface insulating layer having electrodes, and an adhesive layer for bonding the surface insulating layer and the substrate, wherein the adhesive layer has a resistance equivalent to that of the surface insulating layer. An electrostatic chuck comprising a system adhesive.
らなり、該接着剤層が該表面絶縁層と同等の高い抵抗を
もつことを特徴とする請求項１に記載の静電チャック。2. The electrostatic chuck according to claim 1, wherein the surface insulating layer is made of a high-resistance ceramic, and the adhesive layer has a high resistance equivalent to that of the surface insulating layer.
らなり、該接着剤層が該表面絶縁層と同等の低い抵抗を
もつことを特徴とする請求項１に記載の静電チャック。3. The electrostatic chuck according to claim 1, wherein the surface insulating layer is made of a low-resistance ceramic, and the adhesive layer has a low resistance equivalent to the surface insulating layer.
表面絶縁層と該基板とを接着する接着剤層と、該表面絶
縁層と該基板との間で該接着剤層を取り囲むシールとか
らなることを特徴とする静電チャック。4. A substrate, a surface insulating layer having electrodes, an adhesive layer for bonding the surface insulating layer and the substrate, and a seal surrounding the adhesive layer between the surface insulating layer and the substrate. An electrostatic chuck comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30318696A JP4033508B2 (en) | 1996-11-14 | 1996-11-14 | Electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30318696A JP4033508B2 (en) | 1996-11-14 | 1996-11-14 | Electrostatic chuck |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007025992A Division JP4879771B2 (en) | 2007-02-05 | 2007-02-05 | Electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10144779A true JPH10144779A (en) | 1998-05-29 |
| JP4033508B2 JP4033508B2 (en) | 2008-01-16 |
Family
ID=17917922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30318696A Expired - Lifetime JP4033508B2 (en) | 1996-11-14 | 1996-11-14 | Electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4033508B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004312025A (en) * | 2004-04-23 | 2004-11-04 | Sumitomo Electric Ind Ltd | Wafer holder for semiconductor manufacturing system |
| JP2005150370A (en) * | 2003-11-14 | 2005-06-09 | Kyocera Corp | Electrostatic chuck |
| KR100572975B1 (en) * | 1998-08-03 | 2006-04-24 | 가부시키가이샤 도모에가와 세이시쇼 | Static chuck device |
| JP2006344999A (en) * | 2006-09-04 | 2006-12-21 | Sumitomo Osaka Cement Co Ltd | Susceptor and its manufacturing method |
| JP2007142456A (en) * | 2007-02-05 | 2007-06-07 | Fujitsu Ltd | Electrostatic chuck |
| JP2013131541A (en) * | 2011-12-20 | 2013-07-04 | Tokyo Electron Ltd | Placement table and plasma processing apparatus |
| JP2014232773A (en) * | 2013-05-28 | 2014-12-11 | リンテック株式会社 | Electrostatic holding device and method for removing holding object from the same |
| JP2015035485A (en) * | 2013-08-08 | 2015-02-19 | 株式会社東芝 | Electrostatic chuck, placement plate support and manufacturing method of electrostatic chuck |
| CN112534565A (en) * | 2018-08-29 | 2021-03-19 | 京瓷株式会社 | Electrostatic chuck and method for manufacturing electrostatic chuck |
-
1996
- 1996-11-14 JP JP30318696A patent/JP4033508B2/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100572975B1 (en) * | 1998-08-03 | 2006-04-24 | 가부시키가이샤 도모에가와 세이시쇼 | Static chuck device |
| JP2005150370A (en) * | 2003-11-14 | 2005-06-09 | Kyocera Corp | Electrostatic chuck |
| JP2004312025A (en) * | 2004-04-23 | 2004-11-04 | Sumitomo Electric Ind Ltd | Wafer holder for semiconductor manufacturing system |
| JP2006344999A (en) * | 2006-09-04 | 2006-12-21 | Sumitomo Osaka Cement Co Ltd | Susceptor and its manufacturing method |
| JP2007142456A (en) * | 2007-02-05 | 2007-06-07 | Fujitsu Ltd | Electrostatic chuck |
| JP2013131541A (en) * | 2011-12-20 | 2013-07-04 | Tokyo Electron Ltd | Placement table and plasma processing apparatus |
| JP2014232773A (en) * | 2013-05-28 | 2014-12-11 | リンテック株式会社 | Electrostatic holding device and method for removing holding object from the same |
| JP2015035485A (en) * | 2013-08-08 | 2015-02-19 | 株式会社東芝 | Electrostatic chuck, placement plate support and manufacturing method of electrostatic chuck |
| US9370920B2 (en) | 2013-08-08 | 2016-06-21 | Kabushiki Kaisha Toshiba | Electrostatic chuck, mount plate support, and manufacturing method of electrostatic chuck |
| CN112534565A (en) * | 2018-08-29 | 2021-03-19 | 京瓷株式会社 | Electrostatic chuck and method for manufacturing electrostatic chuck |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4033508B2 (en) | 2008-01-16 |
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