JPH10135376A - Semiconductor device and production thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance adhesion between a mold resin and a wiring board without prolonging the cure time at the time of molding a semiconductor device. SOLUTION: The semiconductor device 1 comprises a semiconductor chip 3 in which an integrated circuit is formed, a wiring board 4 comprising an insulating base material and a wiring metallization formed thereon and mounting the semiconductor chip 3 on one side thereof, a mold resin 7 for sealing the semiconductor chip 3 while being bonded to the sealing region of the wiring board 4, and a plurality of bumps projecting from the other side of the wiring board 4 and connected electrically with the semiconductor chip 3 through the wiring metallization wherein a recess 9 is made in a sealing region corresponding to the vicinity of the gate 16 of a molding die 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a technique effective when applied to a semiconductor device in which a semiconductor chip mounted on a wiring board is resin-sealed.

[0002]

2. Description of the Related Art For example, a BGA (Ball Grid Arrangement) in which a semiconductor chip mounted on a wiring board is sealed with mold resin.
In a semiconductor device having a one-sided mold structure such as a substrate type, a gate break for cutting and removing a runner attached to a wiring substrate at a gate position is performed after molding. Then, in order to improve the separation between the runner and the wiring board at the time of gate break, Au (gold) plating or the like is applied to the resin injection path to the cavity on the wiring board.

Examples of detailed descriptions of resin sealing technology for semiconductor devices include, for example, Nikkei BP, “Practical Course VLSI Packaging Technology (Lower)” (issued on May 31, 1993), There are P31 to P40.

[0004]

Here, when a gate break is performed, the direction in which the runner separates from the wiring board,
Alternatively, since the end portion of the wiring substrate is bent in a direction to be a fulcrum, the mold resin at a portion corresponding to the vicinity of the gate of the mold may be pulled, and a part of the resin may be peeled off together with the runner.

[0005] In this case, not only a mold defect is caused and the reliability of the product is impaired, but also the yield is reduced.

In order to prevent such resin peeling, it is conceivable to increase the holding time of the mold resin injected into the cavity during molding to improve the adhesive strength with the wiring substrate.

[0007] However, this requires a long cure time and deteriorates the throughput in the molding process.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a technique capable of improving the adhesiveness between a molding resin and a wiring board without lengthening a cure time in a mold for a semiconductor device.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0010]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, a semiconductor device according to the present invention comprises a semiconductor chip on which an integrated circuit is formed, a base material having an insulating property, and metallization of wiring formed on the base material, and the semiconductor chip is mounted on one surface. A wiring board, a mold resin that adheres to the sealing area of the wiring board and seals the semiconductor chip with a resin, and a plurality of wiring boards protruding from the other surface of the wiring board and electrically connected to the semiconductor chip through the wiring metallization. And a connected conductive member,
A concave portion or a convex portion is formed at a location of a sealing region corresponding to a vicinity of a gate of a mold.

In this semiconductor device, it is preferable that the concave portion or the convex portion is formed so that the width decreases toward the chip mounting surface of the wiring board. Further, the concave portion or the convex portion can be formed over the entire sealing region to which the mold resin is adhered.

A method of manufacturing a semiconductor device according to the present invention comprises a step of preparing a semiconductor chip on which an integrated circuit is formed, a base material having an insulating property, and a metallized wiring formed on the base material. A step of preparing a wiring substrate having a concave or convex portion formed at a sealing region corresponding to the vicinity of the gate of the mold; a step of mounting a semiconductor chip on the wiring substrate; and setting the wiring substrate in a cavity of a mold. Filling the cavity with a mold resin, bonding the mold resin to a sealing region including a concave portion or a convex portion, and resin sealing the semiconductor chip;
The method includes the steps of opening a mold and taking out a resin-sealed wiring board of a semiconductor chip, and a gate break step of cutting and removing a runner attached to the wiring board.

In this method of manufacturing a semiconductor device, it is desirable that the wiring substrate is set in a mold so that the gate break position is outside the concave or convex portion.

According to the above-mentioned means, since the bonding area between the wiring substrate and the molding resin is increased and the bonding strength between them is improved, a part of the molding resin is separated from the runner during the gate break. There is no. Also,
Since a sufficient adhesive force can be obtained between the wiring substrate and the molding resin in a short time, the curing time in the molding process can be reduced.

[0016]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments, the same members are denoted by the same reference numerals, and the description thereof will not be repeated.

(Embodiment 1) FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a part of a molding device used for manufacturing the semiconductor device of FIG. FIG. 3 is a sectional view showing a semiconductor device to be molded in the molding device of FIG.

The semiconductor device 1 shown in FIG. 1 is of a BGA type in which a semiconductor chip 3 on which an integrated circuit is formed and a printed circuit board are electrically connected via bumps (conductive members) 2.

The wiring board 4 includes a base material 4a made of, for example, epoxy resin and having an insulating property.
And a wiring metallization 4b made of, for example, Cu (copper). The wiring metallization 4b formed on one surface of the base material 4a is formed so as to protrude over the entire area of the other surface via a conductive contact metal 6 in a through hole 5 formed through the base material 4a. For example, it is electrically connected to the bump 2 made of Pb / Sn (lead / tin). The semiconductor chip 3 resin-sealed with the mold resin 7 is, for example, A
It is electrically connected to the wiring metallization 4b by a bonding wire 8 made of u (gold).

When such a semiconductor device 1 is mounted, the semiconductor chip 3 is electrically connected to the printed circuit board via the bonding wire 8, the wiring metallization 4b, the contact metal 6, and the bump 2.

As shown in the figure, a recess 9 is formed in a region of the wiring board 4 where the mold resin 7 is adhered, that is, in a portion of the sealing region A corresponding to the vicinity of a gate of a mold die described later. I have.

FIG. 2 shows a molding apparatus in which such a semiconductor device 1 is manufactured.

In the illustrated molding apparatus, an upper mold 11a and a lower mold 11b which constitute a pair of molds 11 are provided on opposing surfaces of an upper platen 10a and a lower platen 10b which are relatively movable toward and away from each other. And are respectively fixed. Therefore, the mold is clamped by the approaching operation of the upper and lower platens 10a and 10b, and the mold is opened by the separating operation.

On the mating surface of the upper mold 11a and the lower mold 11b, a cavity 12 formed by joining the two is formed. As shown, the cavity 12 has a semiconductor chip 3 to be molded. And the wiring board 4 having the concave portion 9 is located.

A cylindrical tablet 13 is placed in the upper mold 11a.
Is formed to penetrate toward the lower mold 11b, and a runner 15 is formed so as to communicate the pot 14 and the cavity 12 described above. Then, as shown in FIG.
Gate 16 serves as a resin inlet from cavity 5 to cavity 12.
Are formed. As shown, the narrow portion of the gate 16 is located outside the recess 9 so that the wiring board 4
Is set on the mold 11. Since this narrow portion becomes a break position in a gate break step of cutting and removing the runner 15 from the wiring substrate 4 after molding, the break position is a position away from the recess 9.

Above the pot 14, a plunger 17 for pressing the tablet 13 in the pot 14 is provided. Then, the mold resin 7, which is the tablet 13 heated to a predetermined temperature and in a fluidized state, is pressed by the plunger 17 and injected into the cavity 12 from the pot 14 through the runner 15. Thereby, the cavity 1
The semiconductor chip 3 on the wiring board 4 set in 2 is resin-sealed.

An air vent 18 is formed so that the cavity 12 and the outside are communicated with each other to exhaust air in the cavity 12 and the resin at the time of injecting the resin to the outside to complete the resin filling.

The semiconductor device 1 is molded as follows by the molding device having such a structure.

First, the semiconductor chip 3 and the wiring board 4 as described above are prepared, and the semiconductor chip 3 is mounted on the wiring board 4. After setting the wiring board 4 in the cavity 12, the upper and lower platens 10a and 10b are moved closer to each other to clamp the mold 11.

Next, the tablet 13 in the pot 14 is pressed by the plunger 17, and the thermosetting mold resin 7 is injected into the cavity 12 from the runner 15.
As a result, air is pushed out from the air vent 18 to the outside, and the cavity 12 is filled with the mold resin 7, and the semiconductor chip 3 is sealed with the resin in a shape along the cavity 12.

After completion of the molding, the mold 11 is opened, and the resin-sealed wiring board 4 of the semiconductor chip 3 is taken out. Then, a gate break for removing the runner attached to the wiring board 4 is performed.

Here, since the concave portion 9 is formed at the portion of the sealing region A corresponding to the vicinity of the gate 16, the bonding area between the wiring substrate 4 and the mold resin 7 is increased at this portion, and The adhesion between the two is stronger than at the location. Thereby, even if the runner is removed by the gate break, a part of the mold resin 7 does not separate with the runner.

In addition, since such a concave portion 9 allows a sufficient adhesive force to be obtained between the wiring board 4 and the mold resin 7 in a short time, the cure time is shortened,
Throughput can be improved. In particular,
The cure time is reduced from 150sec to 100sec by the recess 9 for 50s.
ec was shortened.

Further, as described above, since the gate break position is located away from the concave portion 9, the peeling stress between the peeling portion of the runner and the mold resin 7 is relaxed, so that the gate breaking operation can be performed smoothly. It can be carried out.

After the gate break, the wiring board 4 is cut into a product outer size, and further processed. Thus, the semiconductor device 1 shown in FIG. 3 is obtained.

(Embodiment 2) FIG. 4 is a sectional view showing a molding step of a semiconductor device according to another embodiment of the present invention.

In the semiconductor device 1 shown in the drawing, the concave portion 9 is formed so that the width decreases toward the chip mounting surface of the wiring board 4. The other points of the present embodiment are the same as those described in the first embodiment.

By forming the recess 9 in such a shape, the molding resin 7 bites into the wiring board 4, so that the adhesive force between the wiring board 4 and the molding resin 7 becomes stronger, and Peeling can be reliably prevented.

(Embodiment 3) FIG. 5 is a sectional view showing a molding process of a semiconductor device according to still another embodiment of the present invention.

In this semiconductor device 1, a convex portion 19 is formed instead of the concave portion 9 as shown in the first and second embodiments. The other points of the present embodiment are the same as those described in the first embodiment.

As described above, since the adhesive force between the wiring board 4 and the molding resin 7 is improved even if the projections 19 are formed, the molding resin 7 can be prevented from peeling off.

(Embodiment 4) FIG. 6 is a sectional view showing a molding step of a semiconductor device according to still another embodiment of the present invention.

In the semiconductor device 1, the protrusion 19 as shown in the third embodiment is formed so that the width decreases toward the chip mounting surface of the wiring board 4. The other points in this embodiment are the same as those described in the first embodiment.

By forming the convex portion 19 in such a wedge shape, the mold resin 7 and the wiring board 4 are engaged with each other, so that the adhesive strength between them is stronger as in the case of the second embodiment. Thus, peeling of the mold resin 7 can be reliably prevented.

Although the invention made by the inventor has been specifically described based on the embodiment, the invention is not limited to the embodiment, and various modifications may be made without departing from the gist of the invention. It goes without saying that it is possible.

For example, various shapes can be adopted for the concave portions 9 and the convex portions 19 formed on the wiring board, and are not limited to the shapes described in the above-described embodiment. For example, in the case of the recess 9, a dimple as shown in FIG. 7 can be formed. Further, the number of the concave portions 9 and the number of the convex portions 19 can be plural as shown in FIGS.

In addition, such concave portions 9 and convex portions 19 may be formed not only in the portion of the wiring substrate 4 corresponding to the vicinity of the gate of the mold 11 but also in the entire sealing region A. In this way, the entire wiring substrate 4 and the molding resin 7 are joined with a strong adhesive force.

Further, the semiconductor device 1 to be manufactured is not a BGA as shown in this embodiment, but is a PGA (Pin Grid).
Other substrate type semiconductor devices such as Array) may be used. In this case, the lead pins serve as conductive members. Then, the semiconductor chip 3 is connected to the bonding wire 8.
Instead, they may be connected by bumps.

[0049]

The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

(1) According to the semiconductor device of the present invention, since the concave portion or the convex portion is formed at the position of the sealing region corresponding to the vicinity of the gate, the bonding area between the wiring substrate and the mold resin is increased. Thus, the adhesive strength between the two is improved. This allows
At the time of a gate break, a part of the mold resin does not separate with the runner. Therefore, the quality and the yield of the semiconductor device can be improved.

(2) Since a sufficient adhesive force can be obtained between the wiring substrate and the molding resin in a short time by the concave or convex portions, the cure time is shortened and the throughput in the molding process is improved. Can be.

(3) By forming the concave portion or the convex portion so that the width becomes narrower toward the chip mounting surface of the wiring substrate, the mold resin and the wiring substrate are engaged with each other, so that the adhesive strength between the two is improved. Thus, the mold resin can be more reliably prevented from peeling off.

(4) If the concave portions and the convex portions are formed over the entire sealing region, the entire wiring substrate and the molding resin are joined with a strong adhesive force.

(5) By setting the gate break position outside the concave portion and the convex portion, the peeling stress between the peeling portion of the runner and the mold resin is alleviated, and the gate break operation is performed smoothly. be able to.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a sectional view showing a part of a molding apparatus used for manufacturing the semiconductor device of FIG. 1;

FIG. 3 is a sectional view showing a semiconductor device molded in the molding device of FIG. 2;

FIG. 4 is a sectional view showing a molding step of the semiconductor device according to the second embodiment of the present invention;

FIG. 5 is a sectional view showing a molding step of the semiconductor device according to the third embodiment of the present invention;

FIG. 6 is a cross-sectional view showing a molding step of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 7 is a cross-sectional view illustrating a molding step of a semiconductor device according to a modification of the present invention.

[Explanation of symbols]

 Reference Signs List 1 semiconductor device 2 bump (conductive member) 3 semiconductor chip 4 wiring board 4a base material 4b wiring metallization 5 through hole 6 contact metal 7 molding resin 8 bonding wire 9 recess 10a upper platen 10b lower platen 11 molding die 11a upper die 11b Lower mold 12 Cavity 13 Tablet 14 Pot 15 Runner 16 Gate 17 Plunger 18 Air vent 19 Convex part A Sealing area

Claims (5)

[Claims] A semiconductor substrate on which an integrated circuit is formed; a base material having an insulating property; and a wiring metallization formed on the base material, and a wiring board having the semiconductor chip mounted on one surface thereof; A mold resin that adheres to the sealing region of the wiring board and seals the semiconductor chip with a resin; and a plurality of mold resins protruding from the other surface of the wiring board are provided and electrically connected to the semiconductor chip through the wiring metallization. A conductive member, and a concave or convex portion is formed at a location of the sealing region corresponding to a vicinity of a gate of a mold. 2. The semiconductor device according to claim 1, wherein the width of the concave portion or the convex portion decreases toward a chip mounting surface of the wiring substrate. 3. The semiconductor device according to claim 1, wherein the concave portion or the convex portion is formed over the entire sealing region to which the mold resin is adhered. 4. A step of preparing a semiconductor chip on which an integrated circuit is formed, a base material having an insulating property, and a metallization formed on the base material, and sealing corresponding to the vicinity of a gate of a mold. A step of preparing a wiring board having a concave portion or a convex portion formed at a stop area; a step of mounting the semiconductor chip on the wiring board; and setting the wiring board in a cavity of the mold, and Filling the mold resin into the inside, bonding the mold resin to a sealing region including the concave portion or the convex portion, and sealing the semiconductor chip with a resin. A step of taking out the sealed wiring board; and a gate break step of cutting and removing a runner attached to the wiring board. The method of manufacturing a semiconductor device according to claim. 5. The method of manufacturing a semiconductor device according to claim 4, wherein the wiring substrate is set in the mold so that a gate break position is located outside the concave portion or the convex portion. Manufacturing method of a semiconductor device.