JPH10135199A - Integrated circuit element and its manufacturing process - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an integrated circuit device having a low dielectric constant by forming a dielectric material containing hardened polyamic acid ester adjacently to metallic circuit wiring for interconnection on a substrate. SOLUTION: Metallic circuit wiring 4 and a dielectric material 6 are provided on the surface of a substrate 2 and vertical metallic studs 8 are provided in the substrate 2. The material 6 which is put on, around, and/or between the wiring 4 is constituted of imidized polyamic acid ester, containing (RO)m (R")n SiR' as an end group, where m, n, R and R', and R" respectively represent 1, 2, or 3, m+n=3, hydrocarbyl groups, and a hydride or hydrocarbyl group. This dielectric composition presents a low coefficient of thermal expansion of 1000×10<-6> at a high temperature. Therefore, an integrated circuit element having a high mechanical characteristic, a high frictional characteristic, a highly uniform optical characteristics, and a high dielectric characteristic can be obtained, because the cracking of films can be avoided during succeeding heat treatment processes.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

FIELD OF THE INVENTION The present invention relates to an improved dielectric composition and an integrated circuit having the improved dielectric material.

[0002]

2. Description of the Related Art Polyimide is known in the art for use in the manufacture of integrated circuits, including chips (such as the backside of a line), thin film packages, and printed circuit boards. Polyimide is a dielectric intermediate layer, a passive layer,
Useful in forming alpha particle barriers and stress relaxation.
Polyimide is particularly useful as an intervening dielectric material for insulating conductive interconnects that interconnect chips on a multichip module. This is known as thin film wiring. A multi-chip module is an intermediate package located between a chip and a circuit board. Multi-chip modules are a commonly known technology. Multi-chip modules are formed from multiple layers of power planes, signal planes, and ground planes, which supply power to the chips and between the chips on the module or to a circuit board or circuit. Distribute input / output signals from the board.

[0003] In the microelectronics industry, there is a continuing demand for improved circuit densities in multilayer circuit elements such as memories and logic elements. Thereby, the performance can be improved and the cost can be reduced.
In order to achieve this object, the minimum characteristic size such as the wiring width of the circuit is reduced, and the dielectric constant of the dielectric material to be interposed is reduced, so that the crosstalk and the capacitive coupling of the circuit wiring are not increased. Make it possible to further reduce the spacing. Polyimide has a dielectric constant of about 3.0 and mechanical and thermal properties that withstand current processing operations and thermal cycling for semiconductor manufacturing. However, it is desirable that dielectric materials for future integrated circuit devices exhibit lower dielectric constants (i.e., <3) than polyimides and satisfy mechanical and thermal properties.

[0004]

It is an object of the present invention to provide an improved integrated circuit device having an improved dielectric material. Other objects of the present invention will become clear from the following disclosure.

[0005]

SUMMARY OF THE INVENTION The improved dielectric material of the present invention comprises a cured polyamic acid ester, preferably terminated with a trialkoxysilylalkyl group. The invention further relates to an integrated circuit device. In one embodiment, the elements include (i) a substrate, (ii) an interconnect metal circuit trace located on the substrate, and (iii) the circuit trace (on and / or between the circuit traces). And an improved dielectric material located adjacent thereto.

[0006] The present invention further relates to an integrated circuit packaging device and a process for making the integrated circuit device of the present invention. A more detailed disclosure of the present invention is set forth in the following description and accompanying drawings.

[0007]

FIG. 1 is a diagram showing an embodiment of an integrated circuit according to the present invention. The device generally comprises a substrate 2, metal circuit wiring 4, and an improved dielectric material 6 according to the invention. The substrate 2 has vertical metal studs 8 formed therein. The circuit wiring functions to distribute an electric signal into the element, supply power, and output a signal from the element. Suitable integrated circuit elements typically have multiple layers of circuit wiring, which are interconnected by vertical metal studs.

[0008] Suitable substrates for the devices of the present invention include silicon, silicon dioxide, glass, silicon nitride, ceramics, aluminum, copper, and gallium arsenide. Other suitable substrates will be known to those skilled in the art. In a multi-layer integrated circuit device, the underlying insulated circuit wiring can also function as a substrate.

The appropriate circuit wiring is generally made of copper, aluminum, tungsten, gold, silver, or an alloy thereof.
It is a metal conductive material. Optionally, the circuit wiring is
Metallic liners such as nickel, tantalum or chromium, or other layers such as barrier layers or adhesive layers (eg,
(SiN, TiN).

A preferred embodiment of the present invention relates to an integrated circuit packaging element (multi-chip module) for providing signal and power supply current to one or more integrated circuit chips. This element has (i) a substrate having a conductor for connection to a circuit board, and (ii) a plurality of electric insulating layers and conductive layers alternately arranged on the substrate, wherein at least the conductive layer is Having an improved polyimide film according to the present invention, and (iii)
A plurality of paths electrically interconnect the conductors, the conductive layers, and the integrated circuit chip.

[0011] An integrated circuit packaging element is the packaging of an intermediate location between an integrated circuit chip and a circuit board. The integrated circuit chip is mounted on an integrated circuit packaging element, and the integrated circuit packaging element is mounted on a circuit board.

The substrate of the packaging element is generally an inert substrate such as glass, silicon or ceramics. An integrated circuit can be arbitrarily arranged on this substrate.
The substrate is provided with conductors such as input / output pins (I / O pins) for electrically connecting the packaging elements to the circuit board. A plurality of electrically insulating layers and conductive layers (layers having a conductive circuit disposed in a dielectric insulating material) are alternately stacked on a substrate. These layers are generally formed on a substrate to be one layer by a layer process,
Each layer is formed in a separate process step.

Further, the packaging element has a receiving means for receiving the integrated circuit chip. Appropriate receiving means,
Includes metal pads for solder connection to a pin board or chip that receives chip I / O pins. Generally, the packaging element also has a plurality of conductive paths, usually arranged in a vertical orientation, which interconnect the I / O pins, the conductive layers, and the integrated circuit chips located in the receiving means. . The functional structure and manufacturing method of integrated circuit packaging elements are known to those skilled in the art and are described in U.S. Pat. Nos. 4,489,364 and 4,50
No. 8,981, No. 4,628,411, and No. 4,811,082. These are referenced here.

An important feature of the present invention is the dielectric material located on, around, and / or between circuit traces. In multi-layer integrated circuit devices, the dielectric material can often be planar to function as a substrate for forming the next layer of circuit wiring. This dielectric material is (RO) _m (R ″) _n S
It has an imidized polyamic acid ester having iR'- as a terminal (terminal group). Here, m is 1, 2 or 3,
m + n = 3, R and R ′ are hydrocarbyl groups, and
R "is a hydride or a hydrocarbyl group. End groups is preferably mono-, di-, or tri C _1-6 alkoxysilyl C _{1 -6} alkyl group or allyl group (e.g., phenylene, benzylene, naphthylene , Anthracenylene, etc.) As used herein, a hydrocarbyl group refers to a hydrocarbon-based group (one or two functional groups) having a carbon atom attached to the rest of the molecule. Hydrocarbyl groups include the following:

(1) Hydrocarbon group: aliphatic (C1-C10 alkyl or alkenyl and C5-10 cycloalkyl or cycloalkenyl), aromatic, aliphatic-substituted aromatic, aromatic-substituted aliphatic and the like. These groups are known to those skilled in the art. For example, methyl (methylene bifunctional hydrocarbyl group), ethyl, butyl, hexyl,
There are octyl, decyl, dodecyl, tetradecyl, octadecyl, cyclohexyl, phenyl, naphthyl, benzyl, and anthracenyl (including all isomers).

(2) Substituted hydrocarbon group: a group containing a non-hydrocarbon substituent. For the purposes of the present invention, it is meant that the radical hydrocarbon properties of the group do not change. One skilled in the art is aware of appropriate substituents (eg, halo, alkoxy, carbalkoxy, nitro).

(3) Hetero group: contains non-carbon atoms present in the chain or ring, while having outstanding hydrocarbon properties within the scope of the present invention; Group. Suitable heteroatoms will be apparent to those skilled in the art, for example, nitrogen, oxygen, and sulfur.

Generally, every 10 carbon atoms in a hydrocarbon-based group will have about 3 substituents or heteroatoms.
Not more than one, and preferably not more than one.

The polyamic acid ester having a terminal group is
Preferably, it is formed from (i) a diamine, (ii) a diester diacyl halide (eg, chloride), and (iii) an aminoalkoxysilane. A suitable diamine is H ₂ N
In the form of RNH ₂ , where R is:

[0020]

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In the formula 1, X represents 1 to 3 carbon atoms or halo carbon atoms, carbonyl, --O--, --S--,
It is selected from the group consisting of alkylene chains having -SO2- and -N-alkyl. Additionally, the alkylene chain can be substituted with haloalkyl (eg, trifluoromethyl) and phenyl. The aromatic ring can be optionally substituted with, for example, trifluoromethoxy or the like. The appropriate R for the diamine includes the following.

[0022]

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In formula 2, y is trifluoromethyl,
Selected from phenyl or substituted phenyl.
Suitable aromatic diamines are p-phenylenediamine, 4,4 '
-Diamino-diphenylamine, benzidine, 4,4'-diamino-diphenyl ether, 1,5-diamino-naphthalene,
3,3'-dimethyl-4,4'diamino-biphenyl, 3,3'-dimethoxybenzidine, 1,4-bis (p-aminophenoxy) benzene, 1,3-bis (p-aminophenoxy) benzene, 2 , 2-bis
[4-aminophenyl] hexafluoropropane.

R in the diamine can also be an aliphatic or alicyclic group. For example, cycloalkylene such as cyclohexylene. Suitable aliphatic diamines include 1,4-diaminocyclohexane and bis (4-aminocyclohexyl) methane.

Preferred diamines are those in which X in the above formula is> C (phenyl) (trifluoromethyl). Suitable diamines include 9,9'-bis (4-aminophenyl) fluorene (FDA), 4,4'-oxydianiline, and 1,1-bis (4-aminophenyl) -1-phenyl-2. ,
There is 2,2-trifluoroethane (3FDA).

The diester diacyl chloride is suitably formed from the corresponding dianhydride, optionally having the following formula:

[0027]

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In the chemical formula 3, Ar can be selected from the following.

[0029]

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Suitable dianhydrides include pyromellitic dianhydride, benzophenone dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 3,3 ', 4,4 '-Biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, bis (3,4-dicarboxyphenyl) thioether dianhydride, bisphenol A
Bisether dianhydride, 2,2-bis (3,4-dicarboxylphenyl) hexafluoropropane dianhydride, 2,3,6,7-
Naphthalenetetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 2,2 ', 3,3'-biphenyl There are tetracarboxylic dianhydride, 3,4,3 ', 4'-benzophenone tetracarboxylic dianhydride, and terphenyl dianhydride. A preferred diester diacyl chloride is diethyl pyromellitic diacyl chloride.

The diester diacyl chloride is produced by sequentially reacting the corresponding acid anhydride with an appropriate alcohol and oxalyl chloride. A suitable alcohol is ethanol. The rate of imidization can be varied by the effect of the electron substituent on the ester group (eg, the ethyl ester substituent from ethanol). Other suitable alcohols for use in the present invention are well known to those skilled in the art, and are described, for example, in "High Perfoam" by Hergenrother.
rmance Polymers "(1994), which is hereby incorporated by reference. Suitable diester diacyl chlorides are diethyl dichloro pyromellitate, diethyl dichloro biphenyl tetracarboxylate, and diethyl dichlor oxydiphthalate. Other suitable diamines and diester diacyl chlorides are well known to those skilled in the art,
For example, U.S. Pat.No. 4,720,539 and U.S. Pat.
No. 058,303 (filed May 10, 1992), which is hereby incorporated by reference.

A suitable aminoalkoxysilane is (H ₂ N
R′Si (R ″) _m (OR) _n ), where m + n
= 3 (n is preferably 3) and R is preferably _C1-6alkyl . And R 'is preferably C _1-6 alkylene
(E.g., methylene) or a non-heteroatom allyl group (hydrocarbon aromatic group without heteroatoms) such as phenylene, benzylene or naphthylene, located between the amino group and the silicon atom. Since R is cleaved off from the composition during the reaction, R can be any organic group that does not inadvertently interfere with the reaction. And such groups should be considered equivalent to those described herein. When n is less than 3, R ″ is preferably hydride or lower C _1-6 alkyl. Suitable silanes are
Aminophenyltrimethoxysilane. Other suitable silane reactants will be known to those skilled in the art.

To form the polyamic acid ester reactant, three precursors are added in appropriate stoichiometric amounts (eg, to obtain a polymer product of the desired molecular weight, 1: 1 diamine and diester diacyl chloride). With the amount of silane calculated from the Calosas formula) in a suitable solvent (NMP
Etc.). Thereby, a polyamic acid ester having an alkoxysilylalkyl terminal is obtained. The polyamic acid ester reactant having an alkoxysilylalkyl end has a molecular weight (Mn) of about 5,000 to 20,000.
0 g / mol. The appropriate alkoxysilylalkyl-terminated polyamic acid ester has the following structure.

[0034]

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In Formula 5, R is phenyl or C _1-6 alkyl, and the polyamic acid ester substituent is ethyl.

If necessary, the polyamic acid ester can be isolated and purified. The polyamic acid ester solution has a low viscosity and a high solid content (for example,> 40 to 5).
0% by weight). The polyamic acid ester can be deposited on the substrate as a film by standard well-known techniques.

The dielectric composition is formed by curing a polyamic acid ester. Polyamic acid esters have a high imidization temperature of 375 ° C. or higher. To cure the composition, the composition is heated to an elevated temperature, either directly or in a stepwise manner (eg, heating at 200 ° C. for 2 hours to elongate the chain, then increasing to 400 ° C. and holding for 2 hours). This completes imidization of the polyamic acid ester and cross-linking condensation of the silyl reactive group.

The dielectric composition of the present invention has a dielectric constant at 80 ° C. of less than 3.2, preferably less than 3.0, and more preferably less than 2.8. This dielectric composition has a low coefficient of thermal expansion at high temperatures (eg, 1000 × at 450 ° C.).
10 ⁻⁶ (ie 1000 ppm), preferably 500 × 1
0 ^-6 , more preferably 100 × 10 ^-6 ), so that cracking of the film can be avoided even during the subsequent heat treatment step.
The composition has strong mechanical and frictional properties and highly uniform optical and dielectric properties. Further, the composition has a thermal stress of less than 100 MPa,
Preferably it is less than 50 MPa. Furthermore, the dielectric composition has mechanical properties that resist cracking, so that it can be chemically / mechanically planarized and further circuit layers can easily be formed lithographically in multilayer integrated circuit devices. The dielectric composition has a large dielectric breakdown voltage, excellent toughness, and high crack resistance even in high ambient humidity in a thick film state. The dielectric composition is optically transparent and adheres well to the substrate. This dielectric composition
Minimal shrinkage during heating (eg, less than 10%).

The present invention further relates to a process for manufacturing an integrated circuit device. FIG. 2 illustrates the first step of one exemplary process, in which a layer 10 of a dielectric composition of the present invention comprising a trialkoxysilylalkyl terminated polyamic acid ester is disposed on a substrate 2. Substrate 2
Are shown with vertical metal studs 8. Polyamic acid ester is dimethylpropylene urea (D
(MPU), NMP, etc., and then applied to the substrate by a known method such as spin coating or spray coating or doctor blading. Since the solution has a unique high solids content (40-50%), it exhibits excellent planarization properties. In the second step of the process, the polyamic acid ester is heated to an elevated temperature for both chain elongation and imidization of the polyamic acid ester. Suitably, the composition is heated in the presence of a base such as an amine or Bronsted base. The base is a catalyst that allows imidization at lower initial cure temperatures, for example, below 200 ° C. Suitably, the base is an organic amine. The amine preferably has a high boiling point and can be removed by heating when the reaction is complete. A suitable base is N-methyldiethanolamine. Other suitable bases are well known to those skilled in the art and are disclosed, for example, in US Pat. No. 5,206,117.

FIG. 3 shows the third step of the process, in which a lithographic technique is used to pattern the dielectric composition layer 10 so that a trench is formed in the composition layer.
(Recess) 12 is formed. The trench 12 shown in FIG. 3 extends into the substrate 2 and the metal stud 8. Pattern formation by lithography is generally (i) for example, Shipley or Hoec
coating the layer of dielectric composition 10 with a positive or negative photoresist (AZ photoresist) marketed by hst Celanese, and (ii) imaging the photoresist against radiation, such as electromagnetic waves such as UV or deep UV. Exposure (through a mask), (iii) developing the image in the resist using a suitable basic developer, and (iv) a suitable transfer technique such as reactive ion beam etching (RIE) Is used to transfer the image to the substrate 2 through the layer 10 of the dielectric composition. Appropriate lithographic patterning techniques are well known to those skilled in the art and are described by Thompson et al.
Auction to Microlithography "(1994).

FIG. 4 shows a fourth step in the process of manufacturing the integrated circuit of the present invention, in which a metal film 14 is deposited on the patterned dielectric layer 10. Suitable metallic materials include copper, tungsten, and aluminum. The metal is suitably deposited on the patterned dielectric layer by known techniques. For example, chemical vapor deposition (C
VD), plasma enhanced CVD, electroplating and chemical plating, sputtering and the like.

FIG. 5 shows the last step of the process, which removes excess metal material (ie, metal film 1).
4 is flattened) so that the film 14 is about the same height as the patterned dielectric layer 10. Planarization can be performed using chemical or mechanical polishing, or using selective dry or wet etching. Appropriate chemical or mechanical polishing is a technique well known to those skilled in the art.

6 to 8 show another example of the process of the present invention for manufacturing an integrated circuit. In the first step of this example, the metal film 16 is deposited on the substrate 18.
The substrate 18 is also provided with a vertical metal stud 20. FIG. 7 shows the second step in this process, in which the metal film is lithographically patterned through a mask to form trenches 22. FIG. 8 is the third step in this process, in which a layer 24 of the polyamic acid ester of the present invention is provided on the patterned metal film 16. In the last step of the process, the polyamic acid ester is imidized by heating the polyamic acid ester. Thereafter, the dielectric layer may optionally be planarized for subsequent processing in the multilayer integrated circuit.

[0044]

The following example is a detailed description of the invention.
The detailed description is exemplary and is within the scope of the more generally described methods described above. Each example is provided by way of explanation, and is not intended to limit the scope of the invention.

Example 1: Synthesis of trimethoxysilane-terminated polyamic acid ethyl ester diethyl metaacyl pyromellitate diacyl chloride (PMD
A) 1,1-bis (4-aminophenyl) -1-phenyl-2,2,2-trifluoroethane (3FDA) in a three-necked flask equipped with an overhead stirrer, nitrogen inlet, and addition funnel , 9.48 mmol (3.2
456 g) of 3FDA, 1.04 mmol (0.2218 g) of aminophenyltrimethoxysilane, 25 mmol (2 g) of pyridine, and 50 mL of distilled NMP were charged. The system was kept under a continuous nitrogen purge. The reaction mixture was cooled to 0 ° C. PMDA diethyl ester diacyl chloride (10 mmol, 3.4716 g)
L was dissolved in methylene chloride and quantitatively transferred to an addition funnel. Methylene chloride solution was added dropwise into the reaction mixture. After the addition was completed, polymerization was carried out at room temperature overnight. The polyamic acid ethyl ester oligomer (Mn = 10,000) was isolated by coagulation in methanol, filtered and dried in a vacuum oven at 60 ° C.

Example 2: Film formation The polyamic acid ethyl ester oligomer from Example 1 was dissolved in NMP. A clear solution having a solids content of 45% by weight was produced. Subsequently, the solution was cast on a glass plate by spin coating to form a film having a thickness of 1 to 10 μm. This polymer membrane is
200 ° C, 300 ° C, 400 ° C respectively in N ₂ atmosphere
, Was heated for 1 hour to perform imidization. The cured polyimide film was then slowly cooled to room temperature. The cured polyimide has no cracks and 8
It exhibits a dielectric constant of about 3.0 at 0 ° C., a thermal stress of about 45 Mpa, and a coefficient of thermal expansion of 75 × 10 ⁻⁶ at 450 ° C.

Although the invention has been described with reference to specific embodiments, the details thereof are not to be construed as limiting,
Various embodiments without departing from the spirit and scope thereof,
It will be apparent that variations and modifications are possible and that such equivalent embodiments are also intended to fall within the scope of the invention.

In summary, the following matters are disclosed regarding the configuration of the present invention.

(1) (a) substrate, (b) metal circuit wiring disposed on the substrate, (c) disposed adjacent to the circuit wiring, and (RO) _m (R ″) _n SiR ′ Having a-terminated imidized polyamic acid ester, wherein R and R 'are each independently a hydrocarbyl group and R "is a hydride or hydrocarbyl group and m is 1, 2 or 3; And n + m = 3, and the coefficient of thermal expansion is 1000 × 1
Integrated circuit device having a dielectric composition is less than 0 ^-6. (2) The device according to the above (1), wherein the polyamic acid ester is terminated with a tri-C _1-10 alkoxysilyl C _1-10 alkyl group or a tri-C _1-10 alkoxysilylaryl group. (3) The polyamic acid ester is 9,9′-bis (4-aminophenyl) fluorene, 4,4′-oxydianiline and
1,1-bis (4-aminophenyl) -1-phenyl-2,2,2 a diamine selected from trifluoroethane, pyromellitic di-C _1-6 alkyl-dichlorophenyl, oxydiphthalic acid di C _1-6 The device according to the above (2), comprising an alkyl dichloride and a diester diacyl halide selected from diC _1-6 alkyldichlorobiphenyl tetracarboxylate. (4) The device according to (2), wherein the dielectric composition has a dielectric constant of less than 3.0. (5) (a) (RO) _m (R ″) _n SiR′—
And R 'is independently a hydrocarbyl group and R "is a hydride or hydrocarbyl group and m is 1,
Disposing a layer of a dielectric composition having a polyamic acid ester in which 2 or 3 and n + m = 3 on a substrate, and (b) imidizing the polyamic acid ester to obtain an imidized polyamic acid ester of 10
Heating the dielectric composition to have a coefficient of thermal expansion of less than 00 × 10 ⁻⁶ ; (c) lithographically patterning the dielectric layer; and (d) on the patterned dielectric layer. Depositing a metal film on the substrate; and (e) planarizing the metal film to form the integrated circuit. (6) The process according to (5), wherein the polyamic acid ester is terminated with a tri-C _1-10 alkoxysilyl C _1-10 alkyl group or a tri-C _1-10 alkoxysilylaryl group. (7) The polyamic acid ester is 9,9′-bis (4-aminophenyl) fluorene, 4,4′-oxydianiline and
1,1-bis (4-aminophenyl) -1-phenyl-2,2,2 a diamine selected from trifluoroethane, pyromellitic di-C _1-6 alkyl-dichlorophenyl, oxydiphthalic acid di C _1-6 The process according to (6) above, comprising alkyl dichlor and a diester diacyl halide selected from diC _1-6 alkyldichlorobiphenyl tetracarboxylate. (8) (a) depositing a metal film on a substrate;
(B) patterning the metal film by lithography; and (c) terminating (RO) _m (R ″) _n SiR′—, wherein R and R ′ are each independently a hydrocarbyl group and R ″ Is a hydride or hydrocarbyl group and m
Providing a layer of a dielectric composition having a polyamic acid ester wherein is 1, 2 or 3 and n + m = 3 on the patterned metal film; and (d) imidizing the polyamic acid ester, Heating the dielectric composition such that the oxidized polyamic acid ester has a coefficient of thermal expansion of less than 1000 × 10 ⁻⁶ . (9) The process according to (8), wherein the polyamic acid ester is terminated with a tri-C _1-10 alkoxysilyl C _1-10 alkyl group or a tri-C _1-10 alkoxysilylaryl group. (10) The polyamic acid ester is 9,9'-bis (4-
(Aminophenyl) fluorene, 4,4′-oxydianiline and 1,1-bis (4-aminophenyl) -1-phenyl-2,2,2-trifluoroethane, a diamine selected from pyromellitic acid diC _1-6 alkyl dichloride, oxydiphthalic acid di C _1-6
The process according to (9) above, comprising alkyl dichlor and a diester diacyl halide selected from diC _1-6 alkyldichlorobiphenyl tetracarboxylate. (11) (RO) _m (R ″) _n SiR′-, wherein R and R ′ are each independently C _1-10 alkyl or phenyl;
R ″ is a hydride, C _1-10 alkyl or phenyl, m is 1, 2 or 3, and n + m = 3. (12) The ester is a tri-C _1-10 alkoxysilyl C The polyamic acid ester according to the above (11), which is terminated by a _1-10 alkyl group or tri-C _1-10 alkoxysilylaryl group (13) Integrated circuit packaging for providing a signal and a power supply current to an integrated circuit chip In the device, (i) a substrate having a conductor for connection to a circuit board, and (ii) a plurality of electrically insulating layers and conductive layers alternately arranged on the substrate, At least one layer has (R
O) _m (R ") _n SiR'- terminated imidized polyamic acid ester, wherein R and R 'are each independently a hydrocarbyl group and R" is a hydride or hydrocarbyl group. M is 1, 2 or 3 and n + m
= 3, wherein the thermal expansion coefficient of the imidized polyamic acid ester is less than 1000 × 10 ⁻⁶ ,
ii) an integrated circuit packaging element having a plurality of paths for electrically interconnecting the conductor, the conductive layer and the integrated circuit chip. (14) The device according to the above (13), wherein the polyamic acid ester has a tri-C _1-10 alkoxysilyl C _1-10 alkyl group or a tri-C _1-10 alkoxysilylaryl group as a terminal. (15) The polyamic acid ester is 9,9'-bis (4-
(Aminophenyl) fluorene, 4,4′-oxydianiline and 1,1-bis (4-aminophenyl) -1-phenyl-2,2,2-trifluoroethane, a diamine selected from pyromellitic acid diC _1-6 alkyl dichloride, oxydiphthalic acid di C _1-6
(14) The device according to the above (14), comprising an alkyl dichloride and a diester diacyl halide selected from diC _1-6 alkyldichlorobiphenyl tetracarboxylate.

[Brief description of the drawings]

FIG. 1 is a partial sectional view of an integrated circuit device according to the present invention.

FIG. 2 is a diagram showing a process for manufacturing an integrated circuit device of the present invention.

FIG. 3 is a diagram showing a process for manufacturing an integrated circuit device of the present invention.

FIG. 4 is a diagram showing a process for manufacturing an integrated circuit device of the present invention.

FIG. 5 is a diagram showing a process for manufacturing an integrated circuit device of the present invention.

FIG. 6 is a diagram showing another process for producing the integrated circuit device of the present invention.

FIG. 7 is a diagram showing another process for manufacturing the integrated circuit device of the present invention.

FIG. 8 is a diagram showing another process for producing the integrated circuit device of the present invention.

[Explanation of symbols]

 2 Substrate 4 Metal circuit wiring 6 Dielectric material 8 Metal stud 10 Dielectric composition layer 14 Metal film 16 Metal film 18 Substrate

 ────────────────────────────────────────────────── ─── Continued on Front Page (72) Robert Dennis Miller, Inventor, USA 95120, Tam Oshunter Drive, San Jose, California 6614 (72) Inventor, Satiana Layan Ayanger Sriniva San Rochester, NY 14620 United States of America , Server Bang Court Number 8 102

Claims (15)

[Claims] (A) a substrate; (b) a metal circuit wiring disposed on the substrate; (c) a metal circuit wiring disposed adjacent to the circuit wiring;
_m (R ″) _n SiR′-terminated imidized polyamic acid ester, wherein R and R ′ are each independently a hydrocarbyl group and R ″ is a hydride or hydrocarbyl group, Is 1, 2 or 3 and n + m =
And a dielectric composition having a coefficient of thermal expansion of less than 1000 × 10 ⁻⁶ . 2. The method of claim 1, wherein said polyamic acid ester is tri-C
_1-10 alkoxysilyl C _1-10 alkyl group or tri-C
_{2. The method according} to claim 1, wherein the terminal is a _1-10 alkoxysilylaryl group.
An element according to claim 1. 3. The polyamic acid ester according to claim 1, wherein the 9,9'-bis (4-aminophenyl) fluorene, 4,4'-oxydianiline and 1,1-bis (4-aminophenyl) -1-phenyl- 2,2,
A diamine selected from 2-trifluoroethane, pyromellitic di-C _1-6 alkyl-dichlorophenyl, oxydiphthalic acid di C _1-6 alkyl-dichlorobenzene, and tetracarboxylic di C ₁
3. A device according to claim 2, comprising a diester diacyl halide selected from _-6 alkyldichlorobiphenyl. 4. The device according to claim 2, wherein said dielectric composition has a dielectric constant of less than 3.0. 5. (a) (RO) _m (R ″) _n SiR′—, wherein R and R ′ are each independently a hydrocarbyl group and R ″ is a hydride or hydrocarbyl group. M
Disposing a layer of a dielectric composition having a polyamic acid ester wherein 1, 2, or 3 and n + m = 3 on a substrate; and (b) imidizing the polyamic acid ester to obtain an imidized polyamic acid. The ester is 1000 × 10 ^-6
Heating said dielectric composition to have a coefficient of thermal expansion less than; (c) lithographically patterning said dielectric layer; and (d) depositing a metal film on said patterned dielectric layer. Forming an integrated circuit, the method comprising: (e) planarizing the metal film to form the integrated circuit. 6. The polyamic acid ester is tri-C
_1-10 alkoxysilyl C _1-10 alkyl group or tri-C
_{6. The method according} to claim 5, wherein the terminal is a _1-10 alkoxysilylaryl group.
The process described in. 7. The polyamic acid ester according to claim 1, wherein 9,9'-bis (4-aminophenyl) fluorene, 4,4'-oxydianiline and 1,1-bis (4-aminophenyl) -1-phenyl- 2,2,
A diamine selected from 2-trifluoroethane, pyromellitic di-C _1-6 alkyl-dichlorophenyl, oxydiphthalic acid di C _1-6 alkyl-dichlorobenzene, and tetracarboxylic di C _1
And a diester diacyl halide selected from _-6 alkyldichlorobiphenyl. 8. A method comprising: (a) depositing a metal film on a substrate; (b) patterning said metal film by lithography; and (c) (RO) _m (R ″) _n SiR′-. A polyamic acid ester in which R and R 'are each independently a hydrocarbyl group and R "is a hydride or hydrocarbyl group, m is 1, 2 or 3, and n + m = 3 Providing a layer of a dielectric composition on the patterned metal film; and (d) imidizing the polyamic acid ester, wherein the imidized polyamic acid ester is 1000 × 10 ^−6.
Heating the dielectric composition to have a coefficient of thermal expansion less than. 9. The polyamic acid ester according to claim 1, wherein said triamic acid ester is tri-C.
_1-10 alkoxysilyl C _1-10 alkyl group or tri-C
_{9. A} terminal having a _1-10 alkoxysilylaryl group as a terminal.
The process described in. 10. The polyamic acid ester is 9,9′-
Bis (4-aminophenyl) fluorene, 4,4'-oxydianiline and 1,1-bis (4-aminophenyl) -1-phenyl-2,
Select a diamine selected from 2,2-trifluoroethane, pyromellitic di-C _1-6 alkyl-dichlorophenyl, oxydiphthalic acid di C _1-6 alkyl-dichlorobenzene, and the tetracarboxylic acid di-C _{1 -6} alkyl dichlorobiphenyl 10. The process according to claim 9, wherein the diester diacyl halide is provided. 11. A method according to claim 11, wherein (RO) _m (R ″) _n SiR′—
R and R 'are independently C _1-10 alkyl or phenyl, R ″ is hydride, C _1-10 alkyl or phenyl, m is 1, 2 or 3 and n + m = 3
A polyamic acid ester. 12. The polyamic acid ester according to claim 11, wherein the ester is terminated with a tri-C _1-10 alkoxysilyl C _1-10 alkyl group or a tri-C _1-10 alkoxysilylaryl group. 13. An integrated circuit packaging device for providing a signal and a power supply current to an integrated circuit chip, comprising: (i) a substrate having a conductor for connection to a circuit board; A plurality of electrically insulating layers and conductive layers, wherein at least one of the plurality of layers has an imidized polyamic acid ester terminated with (RO) _m (R ″) _n SiR′- , R and R ′ are each independently a hydrocarbyl group and R ″ is a hydride or hydrocarbyl group, m is 1, 2 or 3 and n + m = 3, and the imidized polyamic acid ester is A plurality of layers having a coefficient of thermal expansion of less than 1000 × 10 ⁻⁶ , and (iii) a plurality of paths for electrically interconnecting the conductor, the conductive layer, and the integrated circuit chip. element . 14. The device according to claim 13, wherein said polyamic acid ester is terminated with a tri-C _1-10 alkoxysilyl C _1-10 alkyl group or a tri-C _1-10 alkoxysilylaryl group. 15. The method of claim 15, wherein the polyamic acid ester is 9,9′-
Bis (4-aminophenyl) fluorene, 4,4'-oxydianiline and 1,1-bis (4-aminophenyl) -1-phenyl-2,
Select a diamine selected from 2,2-trifluoroethane, pyromellitic di-C _1-6 alkyl-dichlorophenyl, oxydiphthalic acid di C _1-6 alkyl-dichlorobenzene, and the tetracarboxylic acid di-C _{1 -6} alkyl dichlorobiphenyl 15. The device according to claim 14, comprising a diester diacyl halide.