KR19990057019A - Reactive Monomer for Photosensitive Polyimide Composition - Google Patents

Abstract

The present invention relates to a reactive monomer capable of increasing the crosslinking density of the photosensitive polyimide composition with the polyimide precursor and improving the adhesion between the silicon wafer and the polyimide precursor. Reaction monomers having the following formula (IV) are prepared by reacting the following formulas (I), (II), (III) and halogen silicone compounds:

Wherein X ₁ and X ₂ are the same as each other and are Cl or Br, and R ₁ and R ₂ are monovalent organic groups having at least one aliphatic or aromatic unsaturated double bond, and (II) is NH ₂ -R ₁ (III) is HO-R ₂ , and (III) is HO-R ₁ when (II) is NH ₂ -R ₂ , and R ₃ is a group introduced from the halogen silicone compound.

In the present invention, the amount of the reactive monomer is used 1 to 20 parts by weight based on 100 parts by weight of the polyimide precursor solution. A photoinitiator, a sensitizer, a polymerization inhibitor and / or a colloidal inorganic additive may be further added to the polyimide composition to improve light sensitivity, thermal stability, and hardness of the film.

Description

[Name of invention]

Reactive Monomer for Photosensitive Polyimide Composition

Detailed description of the invention

Field of invention

The present invention relates to a reactive monomer and a photosensitive polyimide composition using the same. More specifically, the present invention relates to a reactive monomer that improves the crosslinking density and adhesion of the ester photosensitive polyimide precursor.

Background of the Invention

Recently, in the semiconductor device field mainly on semiconductors and liquid crystal display devices, as the movement of high integration, high density, high reliability, and high speed of electronic devices are rapidly spreading, there is an attempt to use the advantages of organic materials that are easy to process and high purity. Research is actively underway. However, in order for the organic polymer to be used in these fields, it must be thermally stable in a process requiring 200 ° C. or more during device fabrication. In addition to the excellent electrical properties such as high heat resistance, excellent mechanical strength, low dielectric constant and high insulation, the polyimide resin has good planarization characteristics of the coating surface, very low content of impurities which degrades the reliability of the device, and can easily form fine shapes. There is a resin most suitable for the above purpose. The general method for synthesizing polyimide is a two-stage condensation polymerization, in which a diamine component and an acid dianhydride are polymerized in a polar organic solvent such as NMP (N-methyl-2-pyrrolidone), DMAc (dimethylacetamide), or DMF (dimethylformamide). A solution is obtained, which is coated on a silicon wafer or glass and then cured by heat treatment to obtain a polyimide film. Commercialized polyimide products for electronic materials are supplied in the form of polyimide precursor solutions or polyimide films, mainly in the form of polyimide precursor solutions or polyimide films for semiconductor devices, and in the state of polyimide precursor solutions for semiconductor devices. Is supplied. In resin encapsulated LSI, cracks occur in the passivation film of the chip due to volume shrinkage of the resin after the encapsulation and thermal stress caused by the difference between the chip and the coefficient of thermal expansion of the resin. I wear it. This problem is solved by using a polyimide between the chip and the encapsulant as a buffer layer, and a polyimide film thickness of 10 μm or more serves as a buffering function. You can. Polyimides require the formation of micro holes (via holes) such as inter-electrode connections and wire bonding pads. In order to form a fine pattern (via hole) of the polyimide, a method of coating a photorest on an existing polyimide and etching is widely used, but recently, application of a photosensitive polyimide having a photosensitive function to the polyimide has been attempted.

Conventional non-photosensitive polyimide requires an etching process to process holes using a separate photoresist for wire-bonding and metal wiring, but the use of photosensitive polyimide If it is possible to omit some of the processes can greatly increase the productivity. Practical photosensitive polyimide was developed by Rubner et al. Of Siemen (US-A-3957512). This is a form in which the photosensitive group is bonded to the polyamic acid as a polyimide precursor through an ester bond. When the photosensitive polyimide precursor solution is coated on a substrate to form a film and exposed to ultraviolet light, photopolymerization occurs at the exposed portion to form a crosslinked structure. In this state, while developing with an organic solvent, the unexposed part is removed, and the final heat treatment results in the decomposition of the ester-bonded photosensitive component at the same time as the imidization reaction, thereby obtaining a desired pattern of polyimide. However, there is a disadvantage in that resolution is poor in patterning a thick polyimide precursor film. Meanwhile, Toray, Japan, has developed a photosensitive polyimide in which a compound having a photosensitive group and an amino component in a polyamic acid is ion-bonded (US-A-4243743). The combined photosensitive polyimide has advantages in that it is easy to manufacture and generates less harmful by-products than conventional photosensitive polyimide. However, in order to manufacture the photosensitive polyimide in this manner, since a polyamic acid, which is a precursor of a high molecular weight polyimide, is prepared by introducing a photosensitive group in an ionic bond form, it is difficult to form a coating film having a film thickness of 10 μm or more. In order to obtain the thickness of the thick film, it is necessary to increase the solid content concentration of the polyimide precursor solution, but according to the general manufacturing method, the viscosity becomes too high, resulting in uneven coating properties. For this reason, ester type photosensitive polyimide that can maintain a viscosity suitable for thick film formation is more advantageous in forming fine patterns having a film thickness of 10 μm or more, but ester type polyimide precursors have a low adhesive strength. There is a problem that if the film thickness of the fine pattern is 10 μm or more, there is a problem of falling off the wafer during development. Therefore, in order to overcome such weakness of adhesion, the prior art is formulated with an acrylate-based adhesive aid containing a silicone component, such as γ-glycidoxypropylmethyldimethoxysilane, or the silicone diamine with respect to the diamine content It is used by copolymerizing to 10 mol% or less. However, when the adhesion aid is used, the effect of increasing adhesion is insignificant, and when used in excess, the resolution decreases since the crosslinking density is lowered by combining with the functional group of the polymer. And in the case of copolymerizing the silicone diamine, the adhesion is improved to some extent, but there is a problem that the film physical properties are lowered.

Purpose of the Invention

It is an object of the present invention to provide a reactive monomer capable of increasing the crosslinking density of the photosensitive polyimide.

Another object of the present invention is to provide a reactive monomer capable of improving the adhesion of the photosensitive polyimide.

The above and other objects of the present invention can be achieved by the present invention described below.

Summary of the Invention

The present invention relates to a reactive monomer capable of increasing the crosslinking density of the photosensitive polyimide composition with the polyimide precursor and improving the adhesion between the silicon wafer and the polyimide precursor.

Reaction monomers having the following formula (IV) are prepared by reacting the following formulas (I), (II), (III) and halogen silicone compounds:

Wherein X ₁ and X ₂ are the same as each other and are Cl or Br, and R ₁ and R ₂ are monovalent organic groups having at least one aliphatic or aromatic unsaturated double bond, and (II) is NH ₂ -R ₁ (III) is HO-R ₂ , (II) is HO-R ₁ when (II) is NH ₂ -R ₂ , and R ₃ is a group introduced from the halogen silicone compound.

Examples of the compound (II) used in the present invention is 4-vinyl aniline, and examples of the compound (III) are 2-hydroxyethyl methacrylate (2-hydroxyethylmethacrylate), 2-hydroxyethyl acrylate ( 2-hydroxyethylacrylate), N- (2-hydroxyethyl) methacrylate (N- (2-hydroxyethyl) methacrylamide) and (2-hydroxypropyl) acrylamide.

As the halogen silicone compound used in the present invention, 4-bromophenoxy trimethylsilane, 3-chloropropyltriethoxysilane and 3-chloropropyltrimethoxysilane (3- chloropropyltrimethoxysilane).

In the present invention, the amount of the reactive monomer is used 1 to 20 parts by weight based on 100 parts by weight of the polyimide precursor solution.

A photoinitiator, a sensitizer, a polymerization inhibitor and / or a colloidal inorganic additive may be further added to the polyimide composition to improve light sensitivity, thermal stability, and hardness of the film.

Detailed Description of the Invention

The present invention relates to novel reactive monomers and photosensitive polyimide compositions using the same that can simultaneously increase crosslinking density and adhesion.

The structure of the novel reactive monomer of the present invention is represented by the following structural formula (I). In the following formula (I), R ₁ and R ₂ serve to increase the crosslinking density of the polyimide precursor and R ₃ serves to increase the adhesion between the silicon wafer and the polyimide precursor:

In the above, R ₁ and R ₂ are monovalent organic groups having one or more aliphatic or aromatic unsaturated double bonds, and R ₃ is a monovalent organic group containing a silicon component. R ₁ and R ₂ may be the same kind or different as components crosslinked with the unsaturated double bond which is the photosensitive group of the photosensitive polyamic ester:

Reactive monomers having the structure of formula (I) are starting materials of 3,5-dichlorophenol (3,5-dichlorophenol) or 3,5-dibromophenol (3,5-dibromophenol) of formula (II). R ₁ and R ₂ groups are introduced here by reacting monovalent aliphatic or aromatic compounds having the structures (III) and (IV) below:

NH ₂ -R ₄ (III)

HO-R ₄ (IV)

In the above, R ₄ is a monovalent organic group having at least one unsaturated double bond.

Examples of the compound having the structural formula (IV) include 4-vinylaniline, and specific examples of the compound having the structural formula (III) include 2-hydroxyethylmethacrylate, 2 2-hydroxyethylacrylate, N- (2-hydroxyethyl) methacrylate (N- (2-hydroxyethyl) methacrylamide) and (2-hydroxypropyl) acrylamide ).

R ₃ is introduced by reacting a halogen silicone compound with the compound of formula (II). Specific examples of the halogen silicone compound include 4-bromophenoxy trimethylsilane and 3-chloropropyltriethoxysilane. (3-chloropropyltriethoxysilane) and 3-chloropropyltrimethoxysilane.

The polyimide precursor has a structure represented by general formula (V) below:

In the above, X is a tetravalent aromatic organic group, Y is a divalent aromatic organic group, R ₅ and R ₆ are represented by -OR ₇ , -NHR ₈ , -O ^- N ⁺ R ₉ or -OH group, R ₇ , R ₈ and R ₉ are monovalent organic groups having at least one unsaturated double bond.

In the polyimide precursor having the above formula (V), X structure is determined by aromatic acid dianhydride, and Y is determined by aromatic diamine.

Aromatic acid dianhydrides have the structure as shown in formula (VI)

Specific examples of the aromatic acid dianhydride include 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride (3,3', 4,4'-benzophenonetetracarboxylic dianhydride), pyromellitic acid dianhydride), 3,4,9,10-perylenetetracarboxylic dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 4,4-sulfonyldiphthalic dianhydride (4,4-sulfonyldiphthalic dianhydride), 3,3 ', 4,4'-biphenyl tetracarboxylic dianhydride (3,3', 4,4'-biphenyltetracarboxylic dianhydride), 1,2,5,6, -naphthalenetetracarboxylic dianone Hydride (1,2,5,6-naphthalenetetracarboxylic dianhydride), 2,3,6,7-naphthalenetetracarboxylic dianhydride (2,3,6,7-naphthalenetetracarboxylic dianhydride), 1,4,5,8 Naphthalenetetracarboxylic dianhydride (1,4,5,8-naphthalenetetracarboxylic dianhydride), 2,3,5,6-pyridinetetracarboxylic dianhydride (2,3,5,6-pyri dinetetracarboxylic dianhydride), m-terphenyl-3,3 ', 4,4'-tetracarboxylic dianhydride (m-terphenyl-3,3', 4,4'-tetracarboxylic dianhydride), p-terphenyl-3 P-terphenyl-3,3 ', 4,4'-tetracarboxylic dianhydride, 4,4-oxydiphthalic dianhydride (4,4-oxydiphthalic dianhydride), 1,1,1,3,3,3-hexafluoro-2,2-bis (2,3 or 3,4-dicarboxoxyphenoxy) phenylpropane dianhydride (1,1,1 , 3,3,3-hexafluoro-2,2-bis (2,3 or 3,4-dicarboxyphenoxy) phenylpropane dianhydride), 2,2-bis [4- (2,3 or 3,4-dicarboxyphenoxy ) Phenyl] propane dianhydride (2,2-bis [4- (2,3 or 3,4-dicarboxyphenoxy) phenyl] propane dianhydride) and 1,1,1,3,3,3-hexafluoro-2 , 2-bis [4- (2,3 or 3,4-dicarboxyphenoxy) phenyl] propane dianhydride (1,1,1,3,3,3-hexafluoro-2,2-bis [4- (2,3 or 3,4-dicarboxyphenoxy) phenyl] propane dianhydride).

In addition, the aromatic diamines used in the present invention have a structure such as the following structure (VII)

H ₂ NY-NH ₂ (VII)

Specific examples of the aromatic diamine include m-phenylenediamine, p-phenylenediamine, m-xylylenediamine, 1,5-diaminonaphthalene (1,5 -diaminonaphthalene), 3,3'-dimethylbenzidine, 4,4- (or 3,4'-3,3'-2,4 'or 2,2'-) diaminodi Phenylmethane (4,4- (or 3,4'-3,3'-2,4 'or-2,2'-) diaminodiphenylmethane), 4,4- (or 3,4'-3,3'- 2,4 'or-2,2'-) diaminodiphenylether (4,4- (or 3,4'-3,3'-, 2,4 'or 2,2'-) diaminodiphenylether), 4 , 4- (or 3,4'-3,3'-2,4- or-2,2 '-) diaminodiphenylsulfide (4,4- (or 3,4'-3,3'- 2,4 'or-2,2'-) diaminodiphenylsulfide), 4,4- (or 3,4'-3,3'-2,4 'or -2,2'-) diaminodiphenylsulfide ( 4,4- (or 3,4'-, 3,3-, 2,4'- or 2,2 '-) diaminodiphenylsulfide), 1,1,1,3,3,3-hexafluoro-2, 2-bis (4-aminophenyl) propane ((1,1,1,3,3,3-hexafluoro-2,2-bis (4-aminophenyl) propane), 2,2-bis (4- (4- Aminophenoxy) phenyl) propane (2,2-bis (4- (4-aminophenoxy) phenyl) prop ane), 4,4-benzophenonediamine, 4,4'-di- (4-aminophenoxy) phenylsulfone (4,4'-di- (4-aminophenoxy) phenylsulfone), 3,3-dimethyl-4,4-diaminodiphenylmethane, 4,4'-di- (3-aminophenoxy) phenylsulfone (4,4 ' -di- (3-aminophenoxy) phenylsulfone), 2,4-diaminotoluene, 2,5-diaminotoluene, 2,6-diaminotoluene (2 , 6-diaminotoluene, benzidine, o-tolidine, 4,4'-diaminoterphenyl, 2,5-diaminopyridine (2,5 -diaminopyridine), 4,4'-bis (p-aminophenoxy) biphenyl (4,4'-bis (p-aminophenoxy) biphenyl) and hexahydro-4,7-methanoindanylene dimethylene diamine (hexahydro -4,7-methanoindanylene dimethylene diamine).

In addition, the compounds used to introduce R ₅ and R ₆ include 4-vinylaniline, 2-hydroxyethyl methacrylate, 2-hydroxyethyl acrylate (2- hydroxyethylacrylate), N- (2-hydroxyethyl) methacrylate (N- (2-hydroxyethyl) methacrylamide), (2-hydroxypropyl) acrylamide, 2-isocyanateethyl Methacrylate (2-isocyanate ethylmethacrylate), 2-diethylamino ethylmethacrylate (2-diethylamino ethylmethacrylate) and glycidyl methacrylate (glycidylmethacrylate).

As a photoinitiator used for the polyimide precursor of Structural Formula (V), 2,6-di- (p-azidobenzal) -4-methylcyclohexanone (2,6-di- (p-azidobenzal) -4 bisazide compounds such as -methylcyclohexanone) and 2,6-di- (p-azidobenzal) -cyclohexanone, benzophenone, methyl o-benzoylbenzoate, 4,4'-bis (dimethyl Aminobenzophenone) 4,4-bis (diethylaminobenzophenone), 4,4-dichlorobenzophenone, 4-benzoyl-4'-methyldiphenylketone, dibenzylketone, florenone, 2,2'- Diethoxyacetophenone, 1-phenyl-1,2-butadione-2- (o-methoxycarbonyl) oxime (1-phenyl-propandione-2- (o-ethoxycarbonyl) oxime), 1,3-diphenyl Propanedione-2- (o-ethoxycarbonyl) oxime (1,3-diphenyl-propandione-2- (o-ethoxycarbonyl) oxime), 1-phenyl-3-ethoxy-propanedione-2- (o -Benzyl) oxime (1-phenyl-3-ethoxy-propandione-2- (o-benzyl) oxime), miharazketone, N-phenylglycidine, 3-phenyl-5-isoxazolone, 1-hydro Roxycyclohex Silphenylketone, 2-methyl- (4- (methylthio) phenyl) -2-morpholino-1-propanone, naphthalenesulfonylchloride, quinolinesulfonyl chloride, N-phenylthioacridone, 4, 4'-azobisisobutyronitrile, diphenyldisulfide, benzthiazoledisulfide, triphenylphosphine, campolquinone, carbon tetrabromide, tribrophenylsulfone, benzoylphenoxide and the like can be used.

In the present invention, the photopolymerization initiator may be used alone or by mixing two or more thereof. The amount of the photoinitiator contained in the photosensitive polyimide precursor of the present invention is preferably 0.1 to 40% by weight, preferably 1 to 15% by weight, based on the solid content of the polyimide precursor.

If the amount of the photopolymerization initiator is too small, the photosensitivity of the composition is lowered, and if it is too large, the film thickness decreases during curing of the film.

In the present invention, a sensitizer may be used to improve light sensitivity. Examples of sensitizers include miharazketone, 2,5-bis (4'-diethylaminobenzal) cyclopentanone, 2,6-bis (4'-dimethylaminobenzal) cyclohexanone, 4,4'-bis (Diethylamino) benzophenone, 4,4'-bis (dimethylamino) chalcone, 4,4'-bis (diethylamino) chalcone, p-dimethylaminobenzylidene indanone, 2- (p-dimethylaminophenyl Vinylene) -isonaphthothiazole, 2- (p-dimethylaminophenylvinylene) benzothiazol, 1,3-bis (4'-dimethylaminobenzal) acetone, 1,3-bis (4'-di Ethylaminobenzal) acetone, 3,3'-carbonyl-bis- (7-diethylaminocumalin), N-phenyldiethanoldiamine, N-tolyldiethanolamine, N-phenylethanoldiamine, dimethylaminobenzoic acid Isoamyl, 3-phenyl-5-isoxazolone, 1-phenyl-5-benzoylthio-tetrazole, 1,5-ethoxycarbonylthio-tetrazole and the like. The sensitizers may be used alone or in a mixture of two or more. The amount of the sensitizer is preferably 0.1 to 30% by weight based on the polyamic acid, preferably 0.5 to 15% by weight. If the amount is too large, the film thickness decreases and the mechanical properties deteriorate when the film is cured. If the amount is too small, the light sensitivity of the composition is poor.

In addition, a thermal polymerization inhibitor may be added to improve thermal stability during storage of the photosensitive polyimide precursor. Examples of thermal polymerization inhibitors include hydroquinone, N-nitrosodiphenylamine, phenothiazine, pt-butylcatechol, N-phenylnaphthylamine, 2,6-di-t-butyl-p-methylphenol, chloranyl Etc.

In order to improve the hardness of the formed polyimide film, colloidal inorganic fine particles may be used. Examples of inorganic fine particles include silica sol, titania sol and zirconia sol. The amount of the colloidal inorganic fine particles used is 1 to 50% by weight based on the solids content of the polyimide precursor, preferably 2 to 30% by weight. When dissolving all components constituting the photosensitive polyimide precursor composition or when dissolving an additive in the composition, colloidal inorganic fine particles or the like may be added to prepare a coating solution.

The prepared solutions can be prepared by coating, submerging or spraying the substrate by spin coater, bar coater, braid coater and screen printer techniques. Substrates are semiconductors such as silicon and gallium-malcenic, inorganic insulators such as alumina ceramics or glass ceramics, metals such as aluminum or steel, organic insulators such as polyester films, and the like. When the prepared solution is applied to a semiconductor, an organic insulator or a metal, the substrate surface may be treated with a bonding aid such as a silane binder, an aluminum chelating agent, a titanium chelating agent, or the like to improve adhesion between the polyimide and the substrate.

After treating the substrate with the presently invented solution, the photosensitive polyimide precursor film is formed by air drying, heating drying or vacuum drying. The produced film is exposed to light using a photomask. Ultraviolet ray, electron ray, X-ray, etc. are used for the exposed light. Lighter sources include low pressure mercury vapor lamps, high pressure mercury vapor lamps, ultra high pressure mercury vapor lamps, halogen lamps and the like, and exposure is under vacuum or nitrogen streams.

Development after exposure takes place by the doping or spraying method. The developing solution is formed by combining an organic solvent having excellent solubility in a polyimide precursor solution and related additives with an organic solvent having low solubility, that is, a poor solvent. The amount of the poor solvent is 1 to 95% by weight based on the organic solvent, preferably 5 to 60% by weight.

After development, washing with water is carried out using organic solvents such as alcohol, hexane, pentane and the like. The pattern of the polyimide precursor obtained after development is converted into a polyimide pattern by heat treatment. The heat treatment is carried out stepwise or continuously between 0.5 to 5 hours at 100 ° C. to 400 ° C. under vacuum or under a nitrogen stream. In this step, polyamic acid or polyamic ester, which is a polyimide precursor, is converted to a relatively low molecular polyimide.

The present invention will be further illustrated by the following examples, which are only described for the purpose of illustrating the present invention and are not intended to limit the protection scope of the present invention.

EXAMPLE

Example 1

Synthesis of Reactive Monomers

A solution of 13 g of 2-hydroxyethyl methacrylate (HEMA) and 10.1 g of triethylamine was dissolved in 150 ml of dimethyl sulfoxide (DMSO) in a 250 ml three-necked flask, and 3,5 in 50 ml of DMSO under nitrogen stream. Dissolve 8.13 g of dichlorophene into the reactor, and react for 2 hours at 50 ° C and 5 hours at 100 ° C under a copper (Cu) catalyst. 13.91 g of 3-chloropropyltriethoxysilane and 5.05 g of triethylamine were dissolved in 50 ml of DMSO, and reacted at 60 to 80 ° C. for 2 hours to synthesize a novel reactive monomer.

Example 2

Preparation of Photosensitive Polyimide Precursor

4,4'-diaminodiphenyl in 176.4 g of N-methyl-2-pyrrolidone under a stream of nitrogen in a 300 ml five-necked flask equipped with a thermometer, agitator, and nitrogen inlet tube cooler. 23.76 g of methane (4,4'-diaminodiphenylmethane, MDA) are dissolved, and 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride (3,3', 4,4'-biphenyltetracarboxylic dianhydride, BPDA) 35.28g was added and polymerized at room temperature for 12-14 hours. Then, 28.4 g of glycidyl methacrylate (glycidylmethacrylate, GMA) was added thereto, and reacted at 60 ° C. for 24 hours to prepare a polyimide precursor having a solid content of 30%.

Example 3

Preparation of Photosensitive Resin Composition

As a photoinitiator to 30 g of the polyimide precursor solution prepared in Example 2, 1-phenyl-1,2-propanedione- (0-ethoxycarbonyl) oxime (1-phenyl-1,2-propanedion-2- (0 0.36 g of -ethoxycarbonyl) oxime), 0.09 g of 4,4'-bis (diethylamino) benzophenone as a sensitizer, 0.36 g of the novel reactive monomer prepared in Example 1 and 2-nitroso-1- which is a polymerization inhibitor 0.15 g of naphthol was mixed and dissolved, and filtered through a 5 μm filter to prepare a photosensitive polyimide composition.

Evaluation of Adhesion between Polyimide Film and Substrate

The photosensitive composition was spin coated onto a 4 inch silicon wafer and heated at 80 ° C. for 3 minutes to have a composition thickness of 18 μm. 1000 mJ was irradiated with an ultra high press Mercury lamp using a photomask. After irradiation, the solution was immersed in developer N-methylpyrrolidone: ethanol = 8: 2 (volume: volume) and developed for 100 seconds with ultrasonicate. A negative pattern with high resolution was obtained. The patterned silicon wafer was heat-treated under a nitrogen stream atmosphere for 10 minutes at 80 ° C., 60 minutes at 120 ° C., and 60 minutes at 350 ° C. in a hot plate to form a 11.6 μm patterned polyimide film. Spin coating the photosensitive composition on another 4-inch silicon wafer and coating the composition to a thickness of 20 μm, followed by drying and scratching 100 grids at 1 mm intervals on the surface of the cloth by using a pressure cooking tester (PCT) at 2.1 atmospheres. And 100 hours under 100% relative humidity. After the treatment, it was attached to the lattice surface with 3M cellophane tape and peeled at a 90 degree angle (JISK-5400). As a result of the experiment, the separation between the silicon wafer and the polyimide film lattice was not performed, and thus the adhesion between the polyimide film and the substrate (silicon wafer) was excellent.

Simple modifications or changes of the present invention can be easily carried out by those skilled in the art, and all such modifications or changes can be seen to be included in the scope of the present invention.

Claims (3)

Reactive monomers having the following structure capable of increasing the crosslinking density of the photosensitive polyimide composition with the polyimide precursor and improving the adhesion between the silicon wafer and the polyimide precursor: Wherein R ₁ and R ₂ are monovalent organic groups having one or more aliphatic or aromatic unsaturated double bonds, and R ₃ is a monovalent organic group containing a silicone component. A process for preparing a reactive reactive monomer of formula (IV) characterized by reacting the following structural formulas (I), (II), (III) and a halogen silicone compound: Wherein X ₁ and X ₂ are the same as each other and are Cl or Br, and R ₁ and R ₂ are monovalent organic groups having at least one aliphatic or aromatic unsaturated double bond, and (II) is NH ₂ -R ₁ (III) is HO-R ₂ , and (III) is HO-R ₁ when (II) is NH ₂ -R ₂ , and R ₃ is a group introduced from the halogen silicone compound. 1-20 weight part of reactive monomers of Claim 1 are contained in 100 weight part of polyimide precursor solutions, The photosensitive polyimide composition characterized by the above-mentioned.