SG55379A1 - Dielectric composition and integrated circuit device - Google Patents

Dielectric composition and integrated circuit device

Info

Publication number
SG55379A1
SG55379A1 SG1997003477A SG1997003477A SG55379A1 SG 55379 A1 SG55379 A1 SG 55379A1 SG 1997003477 A SG1997003477 A SG 1997003477A SG 1997003477 A SG1997003477 A SG 1997003477A SG 55379 A1 SG55379 A1 SG 55379A1
Authority
SG
Singapore
Prior art keywords
integrated circuit
circuit device
dielectric composition
dielectric
composition
Prior art date
Application number
SG1997003477A
Inventor
James Lupton Hedrick
Robert Dennis Miller
Satyanarayan Ayanga Srinivasan
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG55379A1 publication Critical patent/SG55379A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG1997003477A 1996-10-28 1997-09-20 Dielectric composition and integrated circuit device SG55379A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73913596A 1996-10-28 1996-10-28

Publications (1)

Publication Number Publication Date
SG55379A1 true SG55379A1 (en) 1998-12-21

Family

ID=24970981

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003477A SG55379A1 (en) 1996-10-28 1997-09-20 Dielectric composition and integrated circuit device

Country Status (4)

Country Link
JP (1) JPH10135199A (en)
KR (1) KR19980032200A (en)
SG (1) SG55379A1 (en)
TW (1) TW359018B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4998040B2 (en) * 2007-03-27 2012-08-15 Jsr株式会社 Polyamic acid imidized polymer insulating film, film-forming composition and production method thereof
JPWO2022162895A1 (en) * 2021-01-29 2022-08-04

Also Published As

Publication number Publication date
TW359018B (en) 1999-05-21
JPH10135199A (en) 1998-05-22
KR19980032200A (en) 1998-07-25

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