JPH10121250A - Substrate temperature controller for cvd system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the efficiency of substrate temp. control by disposing a nozzle for gaseous flow for the purpose of temp. control in a direction different from the direction of a reactive gas supply nozzle and controlling the temp. and flow rate of the jet from the nozzle at the time of forming thin films by a CVD method. SOLUTION: The nozzle 8 for temp. control which supplies the gas for temp. control of the substrate 5 for film formation is disposed on the opposite side (back side), across the substrate 5, of the nozzle 1 for supplying the reactive gases to the substrate 5. At the time of the temp. control of the substrate 5, the reactive gas temp. is set lower by ΔT than a set substrate temp. and the temp. of the gas for temp. control is set higher by ΔT than the set substrate temp. and the flow rate of the reactive gases and the flow rate of the gas for temp. control are set at nearly the same rates, by which the substrate 5 is subjected to the temp. control to nearly a constant temp. distribution. Similarly, the method of setting the temp. of the reactive gas higher by ΔT than the set substrate temp., setting the temp. of the gas for temp. control lower by ΔT than the set substrate temp. and maintaining the flow rates of both at nearly the same rates may be adopted as well.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a CVD (Chemical).
The present invention relates to a substrate temperature control device for a vapor deposition device (chemical vapor deposition device).

[0002]

2. Description of the Related Art The prior art is shown in FIGS. FIG.
FIG. 2 is a diagram showing a configuration inside a CVD chamber of a conventional apparatus. FIG. 4 is a temperature distribution diagram of a substrate by a conventional apparatus.

In a CVD apparatus, it is necessary to control the temperature of the surface on which the film is to be deposited. The experimental conditions in FIG. 4 are as follows: substrate temperature 550 ° C. reaction gas temperature 200 ° C. distance between nozzle and substrate 5-20 mm glass substrate 5 cm × 5 cm glass substrate does not move

[0004]

However, the prior art has the following problems. (1) In the prior art, the temperature control of the substrate 5 is performed using the electric heater 16. However, even when the heating surface of the electric heater is brought into contact with the substrate or when the heating surface is heated without radiation, the reaction gas It is difficult to control the temperature of the substrate to just cancel the cooling effect of the substrate.

FIG. 4 shows an example. At the position of the glass substrate near the center of the reaction gas supply nozzle, a vertical jet collides with the substrate from the reaction gas supply nozzle, so that the cooling effect of the glass substrate is high.

On the other hand, the heating effect of the electric heater is substantially uniform regardless of the position of the glass substrate. Therefore, the temperature of the collision part of the jet becomes lower than the surroundings. (2) In order to prevent this temperature non-uniformity, it is conceivable to divide the center of the electric heater from the surroundings to control the amount of heat generation. However, the control for matching with the gas cooling effect is complicated and the substrate is moved. In the case of performing CVD while controlling, the control becomes more difficult. An object of the present invention is to provide a device that can solve these problems.

[0007]

[Means for Solving the Problems]

(First Means) A substrate temperature control apparatus according to the present invention is a so-called CVD (chemical vapor deposition) apparatus for depositing a reactive gas on a substrate.
And (B) a temperature control nozzle 8 for supplying gas for controlling the temperature of the substrate provided on the opposite side of the substrate 5. (Second Means) A substrate temperature control apparatus according to the present invention comprises:
Means, the reactive gas temperature is Δ Δ
T is lower, the temperature of the temperature control gas is ΔT higher than the set substrate temperature, and the reactive gas flow rate and the temperature control gas flow rate are substantially the same. (Third Means) A substrate temperature control apparatus according to the present invention comprises:
Means, the reactive gas temperature is Δ Δ
T is high, the temperature of the temperature control gas is lower than the set substrate temperature by ΔT, and the reactive gas flow rate and the temperature control gas flow rate are almost the same.

Therefore, the following operation is performed. A gas flow nozzle for temperature control is installed from a different direction from the reaction gas supply nozzle 1, and the temperature and flow rate (flow velocity distribution) of the jet from this nozzle are adjusted to reduce the temperature of the substrate. Control.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION

(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
2 to FIG. FIG. 1 is a diagram showing a configuration inside a CVD chamber of the apparatus according to the first embodiment of the present invention.

FIG. 2 is a temperature distribution diagram of the substrate according to the first embodiment of the present invention. The gas flowing in the gas outflow direction 7 from the temperature control nozzle 8 in FIG. 1 collides with the substrate 5 and then flows along the electric heater 16.

In this case, if the reactive gas is caused to collide from the reactive gas supply nozzle 1 at a temperature lower by ΔT than the substrate temperature, and the temperature control gas flows at a temperature higher by ΔT than the substrate temperature and at the same flow rate as the reactive gas, The temperature distribution diagram of the substrate 5 can be controlled to a substantially constant temperature.

Similarly, if the reactive gas is caused to collide from the reactive gas supply nozzle 1 at a temperature higher than the substrate temperature by ΔT, and the temperature control gas flows at a temperature lower by ΔT than the substrate temperature and at the same flow rate as the reactive gas, The temperature distribution diagram of the substrate 5 can be controlled to a substantially constant temperature.

The experimental conditions in FIG. 2 are as follows: substrate temperature 550 ° C. reaction gas temperature 200 ° C. gas temperature for temperature control 700-800 ° C. distance between nozzle and substrate 5-20 mm glass substrate 5 cm × 5 cm thickness 1.1 mm glass The substrate does not move. For the used gas and the transparent electrode, reaction gas SnCl ₄ and H ₂ O temperature control gas N ₂ gas flow rate reaction gas SnCl ₄ 15000 cc / min H ₂ O 1 g / min temperature control gas 50000 cc / min Deposit SnO ₂ Spreads evenly with a thickness of several μ

[0014]

Since the present invention is configured as described above, it has the following effects. (1) At a substrate position near the center of the nozzle where the reactive gas from the reactive gas supply nozzle collides with the substrate has a high cooling effect, the temperature adjusting gas collides from the back surface, and the heating effect is also high.

On the other hand, at a substrate position shifted from the center of the nozzle where the cooling effect of the reactive gas on the substrate 5 is reduced, the heating effect of the temperature adjusting gas from the back surface is also reduced. (2) Therefore, the temperature distribution of the substrate can be controlled to be substantially constant as shown in FIG.

[Brief description of the drawings]

FIG. 1 shows a CVD apparatus according to a first embodiment of the present invention.
The figure which shows the structure in a chamber.

FIG. 2 is a temperature distribution diagram of the substrate according to the first embodiment of the present invention.

FIG. 3 is a diagram showing a conventional device.

FIG. 4 is a temperature distribution diagram of a substrate by a conventional apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Reaction gas supply nozzle 2 ... Outflow direction of reaction gas 3 ... Flow of gas along a substrate 4 ... Deposit 5 ... Substrate 6 ... Flow of gas along a substrate 7 ... Outflow direction of temperature control gas 8 ... Temperature control Gas supply nozzle 16: Electric heater

Claims (3)

[Claims] In a so-called CVD (chemical vapor deposition) apparatus for depositing a reactive gas on a substrate, (A) a nozzle 1 for supplying a reactive gas, and (B) a nozzle 1 provided on the opposite side with a substrate 5 interposed therebetween. Temperature control nozzle having a gas supply temperature control nozzle 8 for controlling a substrate temperature 2. The method according to claim 1, wherein the reactive gas temperature is .DELTA.T lower than the set substrate temperature, the temperature control gas temperature is .DELTA.T higher than the set substrate temperature, and the reactive gas flow rate and the temperature control gas flow rate are substantially the same. The substrate temperature control device according to claim 1, 3. The temperature of the reactive gas is ΔT higher than the set substrate temperature, the temperature of the temperature control gas is ΔT lower than the set substrate temperature, and the reactive gas flow rate and the temperature control gas flow rate are substantially the same. The substrate temperature control device according to claim 1,