JPH0492414A - Thin film formation device - Google Patents
Thin film formation deviceInfo
- Publication number
- JPH0492414A JPH0492414A JP20821590A JP20821590A JPH0492414A JP H0492414 A JPH0492414 A JP H0492414A JP 20821590 A JP20821590 A JP 20821590A JP 20821590 A JP20821590 A JP 20821590A JP H0492414 A JPH0492414 A JP H0492414A
- Authority
- JP
- Japan
- Prior art keywords
- reaction gas
- substrate
- nozzle
- reaction
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000012495 reaction gas Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は薄膜形成装置に関し、特に、化学的気相成長
［ＣｖＤ（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓ
ｉｔｉｏｎ）コ法により薄膜を形成する薄膜形成装置に
関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a thin film forming apparatus, and in particular, to a thin film forming apparatus for forming a thin film.
The present invention relates to a thin film forming apparatus for forming a thin film using the method.
［従来の技術〕
第３図は、例えば光・薄膜技術マニュアル（（株）オブ
トロニクス社）の１８４〜１８６ページに説明しである
従来の薄膜形成装置である。ここで、（１）はヒータ、
（２）は基板、（３）は反応ガス供給部、矢印（４）は
排気部である。[Prior Art] FIG. 3 shows a conventional thin film forming apparatus as described, for example, on pages 184 to 186 of the Optical/Thin Film Technology Manual (Obtronix Co., Ltd.). Here, (1) is a heater,
(2) is the substrate, (3) is the reaction gas supply section, and arrow (4) is the exhaust section.
このように構成された薄膜形成装置において、例えば基
板にシリコン酸化膜を形成する場合、ヒタ（１）によっ
て基板（２）を適当な温度まで加熱し、例えばＮ、ガス
をキャリアガスとする５ｉｔ（、ガスと０２ガスを反応
ガス供給部（３）のノズルより基板（２）上に供給し、
排気部（４）から排気する。In the thin film forming apparatus configured in this way, for example, when forming a silicon oxide film on a substrate, the substrate (2) is heated to an appropriate temperature by the heater (1), and then a 5IT ( , gas and 02 gas are supplied onto the substrate (2) from the nozzle of the reaction gas supply section (3),
Exhaust air from the exhaust section (4).
このとき、化学反応により基板（２）上にシリコン酸化
膜が形成される。At this time, a silicon oxide film is formed on the substrate (2) by a chemical reaction.
［発明が解決しようとする課題］
以上のような従来の薄膜形成装置においては、反応ガス
の流れがコントロールしに＜＜、ｍ厚の均一性に対して
悪い影響を与えるという問題点があった。[Problems to be Solved by the Invention] In the conventional thin film forming apparatus as described above, there was a problem in that the flow of the reactant gas was not controlled and had a negative effect on the uniformity of the thickness. .
この発明は上記の課題を解決するためになされタモので
、反応ガス流れのコントロールを好適に行うことができ
る薄膜形成装置を得ることを目的とする。The present invention was made in order to solve the above-mentioned problems, and therefore, it is an object of the present invention to provide a thin film forming apparatus that can suitably control the flow of a reaction gas.
［課題を解決するための手段］
この発明に係る薄膜形成装置は、反応ガス供給用ノズル
を２個以上の多数本設置し、しかも１個の／ズルＩこは
１つ以上の反応ガス噴出孔を設け、各ノズルは各々反応
ガス流量、ノズル出口と基板との距離をそれぞれ独立に
変化できるようにした。[Means for Solving the Problems] A thin film forming apparatus according to the present invention is provided with a large number of two or more reaction gas supply nozzles, and one or more reaction gas nozzles per nozzle. , so that each nozzle can independently change the flow rate of the reaction gas and the distance between the nozzle outlet and the substrate.
［作 用コ
この発明においては、各反応ガス供給用ノズルのガス流
量、基板との距離を調整することにより、反応に必要な
所望のガスの流れが、周囲の形状や環境に関係なく自由
に作ることができ、反応ガスの基板上での流れをコント
ロールできる。[Function] In this invention, by adjusting the gas flow rate of each reaction gas supply nozzle and the distance from the substrate, the desired gas flow required for the reaction can be freely achieved regardless of the surrounding shape or environment. The flow of reactive gases over the substrate can be controlled.
［実施例］
第１図、第２図はこの発明の一実施例を示し、図におい
て、（５）は耐食耐熱金属よりなる反応室壁面であり、
（６）は基板（２）を保持するためのサセプタ、（７）
は複数個の反応ガス供給ノズル、（７ａ）は反応ガス噴
出孔、（８）は反応ガスである。[Example] Figures 1 and 2 show an example of the present invention, in which (5) is a reaction chamber wall made of a corrosion-resistant and heat-resistant metal;
(6) is a susceptor for holding the substrate (2), (7)
denotes a plurality of reaction gas supply nozzles, (7a) a reaction gas ejection hole, and (8) a reaction gas.
その他、第３図におけると同一符号は同一部分である。In addition, the same reference numerals as in FIG. 3 indicate the same parts.
以上の構成により、基板（２）はサセプタ（６）により
保持され、ヒーター（１）により所望の温度、たとえば
２００〜３００°Ｃまで加熱される。加熱された基板（
２ン上に反応ガス供給ノズル（７ンにより反応ガス（８
）が供給されるが、反応ガス供給ノズル（７）は２つ以
上設置され、反応ガス〈８ンか噴出する反応ガス噴出孔
（７ａ）は各々の反応ガス供給用ノズル（７）に１つ以
上設置されているので、多数個の反応ガス供給ノズル（
７）に供給される反応ガス（８）は各々独立に、例えば
図示していないがマスフローコントローラによって制御
される。With the above configuration, the substrate (2) is held by the susceptor (6) and heated by the heater (1) to a desired temperature, for example, 200 to 300°C. heated substrate (
The reaction gas supply nozzle (7 nozzles)
), but two or more reaction gas supply nozzles (7) are installed, and each reaction gas supply nozzle (7) has one reaction gas blow-off hole (7a) that spouts out the reaction gas. Since the above is installed, a large number of reaction gas supply nozzles (
The reaction gases (8) supplied to the reactor gases (8) are each independently controlled, for example, by a mass flow controller (not shown).
また、基板（２）と反応ガス供給ノズル（７ンの出口（
１ａ）との距離は、各々独立に設定される。In addition, the substrate (2) and the reaction gas supply nozzle (7 outlet (
1a) are set independently.
このようにして、反応ガス供給ノズル（７）の反応ガス
流量と、反応ガス供給ノズル出口（γａ）と基板（２）
との距離を制御することにより、基板（２）に到達する
反応ガス（８）の濃度をコントロールす「発明の効果コ
以上のように、この発明によれば、反応室内に収容され
た基板を保持するサセプタ、基板を加熱するヒータ、基
板に供給される反応ガスを供給する反応ガス供給ノズル
を備え、複数個の反応ガス供給ノズルの反応ガス供給量
と、反応ガス供給ノズル出口と基板間の距離とを、各々
独立に制御することにより、基板に到達する反応ガスの
濃度をコントロールでき、基板上での反応ガス濃度を均
一にすることにより、基板に成膜される膜厚の均一性が
向上する。In this way, the reaction gas flow rate of the reaction gas supply nozzle (7), the reaction gas supply nozzle outlet (γa) and the substrate (2) are controlled.
As described above, according to the present invention, the concentration of the reaction gas (8) reaching the substrate (2) can be controlled by controlling the distance between the substrate (2) and the substrate (2). It is equipped with a susceptor for holding the substrate, a heater for heating the substrate, and a reaction gas supply nozzle for supplying the reaction gas supplied to the substrate. By controlling each distance independently, the concentration of the reaction gas that reaches the substrate can be controlled, and by making the concentration of the reaction gas uniform on the substrate, the uniformity of the film thickness formed on the substrate can be achieved. improves.
第１図はこの発明の一実施例の縦断面図、第２図は同じ
く一部切欠き斜視図、第３図は従来の薄膜形成装置の縦
断面図である。
（１）・・ヒーター、（２）・・基板、（４）・・排気
部、（５）・・反応室、（６）・・サセプタ、（７）・
反応ガス供給ノズル、（７ａ）・・反応ガス噴出孔、（
８）・・反応ガス。
なお、各図中、同一符号は同−又は相当部分を示す。FIG. 1 is a longitudinal sectional view of an embodiment of the present invention, FIG. 2 is a partially cutaway perspective view, and FIG. 3 is a longitudinal sectional view of a conventional thin film forming apparatus. (1)...Heater, (2)...Substrate, (4)...Exhaust section, (5)...Reaction chamber, (6)...Susceptor, (7)...
Reaction gas supply nozzle, (7a)... Reaction gas ejection hole, (
8)...Reactive gas. In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
反応ガスを供給する反応ガス供給部と、上記基板を加熱
するヒーターとを有する反応室を備え、上記基板上に薄
膜を形成するものにおいて、上記反応ガス供給部として
、複数個の反応ガス供給用ノズルを設置し、しかも１個
のノズルには少なくとも１つの反応ガス噴出孔を設け、
上記各反応ガス供給用ノズルは反応ガス流量および上記
反応ガス噴出口と基板間の距離を各独立に変化できるよ
うにしたことを特徴とする薄膜形成装置。a susceptor that houses a substrate and on which the substrate is installed;
A reaction chamber including a reaction gas supply section for supplying a reaction gas and a heater for heating the substrate, and forming a thin film on the substrate, wherein the reaction gas supply section includes a reaction chamber for supplying a plurality of reaction gases. installing nozzles, each nozzle having at least one reactive gas ejection hole;
A thin film forming apparatus characterized in that each of the reaction gas supply nozzles can independently change the flow rate of the reaction gas and the distance between the reaction gas outlet and the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20821590A JPH0492414A (en) | 1990-08-08 | 1990-08-08 | Thin film formation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20821590A JPH0492414A (en) | 1990-08-08 | 1990-08-08 | Thin film formation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0492414A true JPH0492414A (en) | 1992-03-25 |
Family
ID=16552585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20821590A Pending JPH0492414A (en) | 1990-08-08 | 1990-08-08 | Thin film formation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0492414A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100279963B1 (en) * | 1997-12-30 | 2001-04-02 | 윤종용 | Gas diffuser for semiconductor device manufacturing and reactor installed |
| JP2002507315A (en) * | 1997-06-26 | 2002-03-05 | アプライド サイエンス アンド テクノロジー，インコーポレイテッド | Toroidal low-field reactive gas source |
| US20100037820A1 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Vapor Deposition Reactor |
| FR2961717A1 (en) * | 2010-06-23 | 2011-12-30 | Soitec Silicon On Insulator | System useful for gas treatment of at least one substrate, comprises reaction chamber, substrate support structure for holding one substrate arranged in reaction chamber, static gas injector, and at least one movable gas injector |
| US8691669B2 (en) | 2008-08-13 | 2014-04-08 | Veeco Ald Inc. | Vapor deposition reactor for forming thin film |
| US8840958B2 (en) | 2011-02-14 | 2014-09-23 | Veeco Ald Inc. | Combined injection module for sequentially injecting source precursor and reactant precursor |
| US8851012B2 (en) | 2008-09-17 | 2014-10-07 | Veeco Ald Inc. | Vapor deposition reactor using plasma and method for forming thin film using the same |
| US8871628B2 (en) | 2009-01-21 | 2014-10-28 | Veeco Ald Inc. | Electrode structure, device comprising the same and method for forming electrode structure |
| US8877300B2 (en) | 2011-02-16 | 2014-11-04 | Veeco Ald Inc. | Atomic layer deposition using radicals of gas mixture |
| US8895108B2 (en) | 2009-02-23 | 2014-11-25 | Veeco Ald Inc. | Method for forming thin film using radicals generated by plasma |
| US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
| US9385622B2 (en) | 2011-09-23 | 2016-07-05 | Eaton Corporation | Power system including an electret for a power bus |
-
1990
- 1990-08-08 JP JP20821590A patent/JPH0492414A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002507315A (en) * | 1997-06-26 | 2002-03-05 | アプライド サイエンス アンド テクノロジー，インコーポレイテッド | Toroidal low-field reactive gas source |
| JP2007165304A (en) * | 1997-06-26 | 2007-06-28 | Mks Instruments Inc | Toroidal plasma chamber |
| JP2008218431A (en) * | 1997-06-26 | 2008-09-18 | Mks Instruments Inc | Toroidal plasma chamber |
| KR100279963B1 (en) * | 1997-12-30 | 2001-04-02 | 윤종용 | Gas diffuser for semiconductor device manufacturing and reactor installed |
| US8691669B2 (en) | 2008-08-13 | 2014-04-08 | Veeco Ald Inc. | Vapor deposition reactor for forming thin film |
| US20100037820A1 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Vapor Deposition Reactor |
| US8851012B2 (en) | 2008-09-17 | 2014-10-07 | Veeco Ald Inc. | Vapor deposition reactor using plasma and method for forming thin film using the same |
| US8871628B2 (en) | 2009-01-21 | 2014-10-28 | Veeco Ald Inc. | Electrode structure, device comprising the same and method for forming electrode structure |
| US8895108B2 (en) | 2009-02-23 | 2014-11-25 | Veeco Ald Inc. | Method for forming thin film using radicals generated by plasma |
| FR2961717A1 (en) * | 2010-06-23 | 2011-12-30 | Soitec Silicon On Insulator | System useful for gas treatment of at least one substrate, comprises reaction chamber, substrate support structure for holding one substrate arranged in reaction chamber, static gas injector, and at least one movable gas injector |
| US8840958B2 (en) | 2011-02-14 | 2014-09-23 | Veeco Ald Inc. | Combined injection module for sequentially injecting source precursor and reactant precursor |
| US8877300B2 (en) | 2011-02-16 | 2014-11-04 | Veeco Ald Inc. | Atomic layer deposition using radicals of gas mixture |
| US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
| US9385622B2 (en) | 2011-09-23 | 2016-07-05 | Eaton Corporation | Power system including an electret for a power bus |
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