JPH10110266A - Sputtering target and joining method thereof - Google Patents
Sputtering target and joining method thereofInfo
- Publication number
- JPH10110266A JPH10110266A JP28296496A JP28296496A JPH10110266A JP H10110266 A JPH10110266 A JP H10110266A JP 28296496 A JP28296496 A JP 28296496A JP 28296496 A JP28296496 A JP 28296496A JP H10110266 A JPH10110266 A JP H10110266A
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- JP
- Japan
- Prior art keywords
- powder
- target
- joining
- backing plate
- target material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はスパッタリングによ
り薄膜を作成するためのターゲット材をバッキングプレ
ート材にろう接により接合するスパッタリングターゲッ
ト及びその接合方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering target for joining a target material for forming a thin film by sputtering to a backing plate material by soldering, and a joining method therefor.
【０００２】[0002]
【従来の技術】スパッタリングターゲットは、強度上の
補強等の目的でターゲット部材をバッキングプレートに
ろう材により接合して作製される。ろう材としては、Ｉ
ｎろう、低融点合金はんだ、銀ろう等が使用されてい
る。接合の手順としては、ターゲット材とバッキングプ
レート材の接合面を、予め、ろう材の融点以上の温度に
予熱した後、その接合面に十分な量のＩｎろう等のろう
材を塗布してターゲット材とバッキングプレート材を重
ね合わせ、圧着しながら冷却して接合を完了させるよう
にしている。2. Description of the Related Art A sputtering target is manufactured by joining a target member to a backing plate with a brazing material for the purpose of reinforcing the strength and the like. As brazing material, I
N-brazing, low melting point alloy solder, silver brazing, and the like are used. As a joining procedure, the joining surface of the target material and the backing plate material is preheated to a temperature equal to or higher than the melting point of the brazing material in advance, and then a sufficient amount of brazing material such as In brazing material is applied to the joining surface. The material and the backing plate material are overlapped and cooled while pressing, thereby completing the joining.
【０００３】この接合時に、接合面にガスが残留する
と、無接合部を生成し、また、ターゲット材とバッキン
グプレート材間の接合層の厚さが不均一になることがあ
ると、このスパッタリングターゲットを用いてスパッタ
リングを行う際、スパッタリングターゲットの温度分布
が不均一になり、基板における薄膜形成が妨げられると
共に、スパッタリングターゲット自体の剥離や損傷等を
招来する。このため、両材料の接合界面に炭素繊維、ガ
ラス繊維を介在させて、接合時の接合界面におけるガス
残留を防止する（特開平３−１１１５６３号公報）、ま
た、両材料の接合界面に所定径の線、棒、球状物等を介
在させて、ターゲット材とバッキングプレート材の平行
度を保つ（特開平８−１７０１７０号公報）等の技術が
提案されている。[0003] If gas remains on the bonding surface during the bonding, a non-bonded portion is formed. If the thickness of the bonding layer between the target material and the backing plate material becomes non-uniform, the sputtering target may become uneven. When the sputtering is performed using the sputtering method, the temperature distribution of the sputtering target becomes non-uniform, and the formation of a thin film on the substrate is hindered, and the sputtering target itself is peeled or damaged. For this reason, carbon fibers and glass fibers are interposed at the joining interface between the two materials to prevent gas remaining at the joining interface during joining (Japanese Patent Laid-Open No. 3-111563). A technique such as maintaining the parallelism between the target material and the backing plate material by interposing a line, a rod, a spherical object, or the like (Japanese Patent Application Laid-Open No. 8-170170) has been proposed.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うな接合技術にあっては、接合時に、圧着接合状態から
の冷却過程においてバッキングプレート材にターゲット
材との収縮量の差による反りをもたらすことがあるとい
う問題があった。反りを生じたスパッタリングターゲッ
トはスパッタリング装置への装着に支障があり、また、
ターゲット材の機械的強度が弱い場合にはターゲット材
に割れを来して使用不能になることがあり、さらに、ス
パッタ装置に装着できたとしも、使用中にクラックが発
生するおそれがあり、またさらに、このようにターゲッ
ト材にクラックが発生すると、成膜不能となったり、薄
膜に異物が付着するなど重大な事故を起こすという危険
があった。本発明は、このような問題に鑑み、スパッタ
リングターゲットの作製にあたり、ターゲット材とバッ
キングプレート材とをろう材を用いて接合する際に、接
合に起因する両材料間の収縮率または熱膨張率の差によ
る発生応力を低減させることにより反りの発生を防止す
ることを目的とするものである。However, in such a joining technique, a warp due to a difference in shrinkage amount between the backing plate material and the target material is caused in the cooling process from the press-bonded state at the time of joining. There was a problem. The warped sputtering target interferes with mounting to the sputtering device, and
If the mechanical strength of the target material is weak, the target material may crack and become unusable, and even if it can be mounted on a sputtering device, cracks may occur during use, Further, if the target material cracks as described above, there is a danger that a serious accident such as a failure to form a film or the attachment of foreign matter to the thin film may occur. The present invention has been made in view of such a problem, and in manufacturing a sputtering target, when a target material and a backing plate material are joined using a brazing material, a contraction rate or a thermal expansion rate between the two materials caused by the joining is reduced. An object of the present invention is to prevent the occurrence of warpage by reducing the stress generated due to the difference.
【０００５】[0005]
【課題を解決するための手段】上記の目的を解決するた
め、本発明は、ターゲット材とバッキングプレート材と
の接合界面に前記ターゲット材と同じ材質の粉体を分散
したＩｎろう材等低融点金属ろう材による接合層を介在
するスパッタリングターゲットを、また、前記粉体は
０．０１〜０．５ｍｍの粒度分布をなし、前記粉体の形
状は球状体であり、且つ、前記粉体の前記低融点金属ろ
う材中の含有量は５〜４０重量％であるスパッタリング
ターゲットを、さらに、前記接合層内において前記粉体
が前記ターゲット材側に密に分散しているスパッタリン
グターゲットを提供する。In order to achieve the above object, the present invention provides a low melting point material such as an In brazing material in which powder of the same material as the target material is dispersed at a bonding interface between the target material and the backing plate material. A sputtering target interposing a bonding layer of a brazing metal, the powder has a particle size distribution of 0.01 to 0.5 mm, the shape of the powder is a spherical body, and the powder The present invention provides a sputtering target whose content in a low melting point metal brazing material is 5 to 40% by weight, and a sputtering target in which the powder is densely dispersed in the bonding layer on the side of the target material.
【０００６】さらに、本発明は、ターゲット材とバッキ
ングプレート材との接合界面に前記ターゲット材と同じ
材質の粉体を分散した低融点金属ろう材を介在させ、加
熱接合して前記粉体を分散させた接合層を得るところの
スパッタリングターゲットの接合方法を、また、前記粉
体の粒度は０．０１〜０．５ｍｍの粒度分布をなし、前
記粉体の形状は球状体であり、且つ、前記粉体の前記低
融点金属ろう材中の含有量は５〜４０重量％とするとこ
ろのスパッタリングターゲットの接合方法を、そして、
前記低融点金属ろう材の溶融層内での比重差を利用して
前記粉体の粗密差を形成させ、前記接合層中の前記粉体
が前記ターゲット材側において密になるようにするとこ
ろのスパッタリングターゲットの接合方法を提供するも
のである。Further, according to the present invention, a low-melting metal brazing material in which powder of the same material as the target material is dispersed is interposed at the joining interface between the target material and the backing plate material, and the powder is dispersed by heating and joining. The bonding method of the sputtering target to obtain the bonding layer, the particle size of the powder has a particle size distribution of 0.01 to 0.5 mm, the shape of the powder is spherical, and the A method for joining a sputtering target, wherein the content of the powder in the low melting point metal brazing material is 5 to 40% by weight;
Using the specific gravity difference in the molten layer of the low melting point metal brazing material to form a difference in density of the powder, so that the powder in the bonding layer is dense on the target material side. A method for bonding a sputtering target is provided.
【０００７】[0007]
【発明の実施の形態】ターゲット材とバッキングプレー
ト材とをろう材を用いて接合し、スパッタリングターゲ
ットを作製する場合において、Ｉｎろう材等低融点金属
ろう材中にターゲット材と同じ材質の粉体を分散した状
態になるようにした調製ろう材をターゲット材とバッキ
ングプレート材の接合面に塗布した後、両材料を接合
し、低融点金属ろう材の融点以上の温度で一定時間保持
してから冷却することにより、界面の接合層にターゲッ
ト材に近い熱膨張率をもたせてターゲット材とバッキン
グプレート材との熱膨張率の差による応力を緩和するこ
とができる。例えば、ターゲット材の比重が溶融低融点
金属ろう材より低い場合は、ターゲット材を上面にして
前記の調製ろう材を塗布してバッキングプレート材を接
合するなどし、低融点金属ろう材の融点以上の温度で一
定時間保持することにより、溶融ろう材中の分散粉体粒
子をターゲット材側にかたよらせ、接合層中の材料分布
に傾斜をもたせた後、冷却することにより、接合層のタ
ーゲット材側にそのターゲット材に近い熱膨張率をもた
せて効果的に応力を緩和することができ、反りの発生を
防止することができる。BEST MODE FOR CARRYING OUT THE INVENTION In a case where a target material and a backing plate material are joined by using a brazing material to form a sputtering target, powder of the same material as the target material is contained in a low-melting metal brazing material such as an In brazing material. After applying the brazing material prepared so as to be in a dispersed state to the joining surface of the target material and the backing plate material, the two materials are joined, and held at a temperature equal to or higher than the melting point of the low melting point metal brazing material for a certain time, By cooling, a stress due to a difference in the coefficient of thermal expansion between the target material and the backing plate material can be reduced by giving the interface layer a thermal expansion coefficient close to that of the target material. For example, if the specific gravity of the target material is lower than the molten low-melting metal brazing material, the prepared material is applied with the target material on the upper surface and the backing plate material is joined, and the melting point of the low-melting metal brazing material or more is applied. At a constant temperature for a certain period of time to cause the dispersed powder particles in the molten brazing material to lean toward the target material side, to make the distribution of the material in the bonding layer inclined, and then to cool the target material of the bonding layer. The side has a thermal expansion coefficient close to that of the target material, so that stress can be effectively alleviated and warpage can be prevented.
【０００８】本発明は、無酸素銅等のバッキングプレー
ト材に対して熱膨張率に大きな差のあるＩＴＯ（Ｉｎ−
Ｓｉ系酸化物）、ＳｉＯ2 、ＢａＴｉＯ3 、ＰＬＺＴ
（イットリウムアルミニウムガーネット）等のセラミッ
クス系ターゲット材を接合する場合において特に有効で
ある。ろう材としては、Ｉｎ、はんだ等の低融点金属が
用いられる。上記粉体入りのＩｎろう材等低融点金属ろ
う材は、好ましくは、接合対象とするターゲット材の一
部を粉砕して０．０１〜０．５ｍｍの粒度分布を持つ粉
体を作成し、この粉体を５〜４０重量％の含有割合にな
るように、融点以上の温度に加熱した低融点金属ろう材
に加え、超音波ごてを使用するなどして溶融低融点金属
ろう材中に分散させて調製する。The present invention provides an ITO (In-In) having a large difference in thermal expansion coefficient with respect to a backing plate material such as oxygen-free copper.
Si-based oxide), SiO 2 , BaTiO 3 , PLZT
This is particularly effective when a ceramic target material such as (yttrium aluminum garnet) is joined. As the brazing material, a low melting point metal such as In or solder is used. The low-melting metal brazing material such as the In brazing material containing the powder is preferably formed by crushing a part of the target material to be joined to form a powder having a particle size distribution of 0.01 to 0.5 mm, This powder is added to the low-melting metal brazing material heated to a temperature equal to or higher than the melting point so as to have a content ratio of 5 to 40% by weight, and is added to the low-melting metal brazing material by using an ultrasonic iron. Prepare by dispersing.
【０００９】粉体の粒度が０．０１ｍｍ未満であると、
微粉のため凝集性が強く、ろう材に分散し難い。また、
この粒度が０．５ｍｍを越えると、接合時のろう材の厚
みが粉体の最大粒子サイズにより決まることから、ろう
材の消費量が多くなり、経済的でない。さらに、粉体含
有量が５重量％未満であると、緩衝材としての効果が薄
れ、４０重量％を越えると、ろう材の粘度が上がり過
ぎ、接合作業が困難になる。When the particle size of the powder is less than 0.01 mm,
Due to the fine powder, it has strong cohesion and is hard to disperse in brazing filler metal. Also,
If the particle size exceeds 0.5 mm, the thickness of the brazing filler metal at the time of joining is determined by the maximum particle size of the powder, so that the consumption of the brazing filler metal increases, which is not economical. Further, if the powder content is less than 5% by weight, the effect as a buffer material is weakened, and if it exceeds 40% by weight, the viscosity of the brazing material becomes too high and the joining operation becomes difficult.
【００１０】接合作業においては、予めターゲット材と
バッキングプレート材は低融点金属ろう材で濡らし処理
しておいたものを使用することが好ましく、このように
濡らし処理をしたバッキングプレート材を加熱した後、
前記の調製した低融点金属ろう材をバッキングプレート
材に対して均一になるように塗布し、次いで、このバッ
キングプレート材上にターゲット材を接合し、所定時
間、低融点金属ろう材の融点以上の温度で保持し、低融
点金属ろう材中の粒子がターゲット材側に移動するのを
待つ。時間としては長いほうがよいが、通常は、３０分
程度でよい。粉体粒子のＩｎろう材内移動の確認は予め
テストピースで行う。即ち、同じ配合割合で粉体を超音
波はんだごて等で分散させて調製した低融点金属ろう材
を所定時間で固化させ、その調製低融点金属ろう材のテ
ストピース断面を観察し、粉体の移動状況により最適条
件を確認する。所定の最適時間及び温度を保持した後、
冷却して接合を完了する。冷却時は、必要により加圧し
てもよい。In the joining operation, it is preferable to use a target material and a backing plate material which have been wetted with a low melting point brazing material in advance, and after heating the backing plate material thus wetted, ,
The prepared low-melting metal brazing material is uniformly applied to a backing plate material, and then a target material is bonded onto the backing plate material for a predetermined time, the melting point of which is equal to or higher than the melting point of the low-melting metal brazing material. Hold at the temperature and wait for the particles in the low melting point brazing metal to move to the target material side. The longer the time, the better, but usually about 30 minutes. Confirmation of the movement of the powder particles in the In brazing material is performed by a test piece in advance. That is, the low-melting metal brazing material prepared by dispersing the powder in the same mixing ratio with an ultrasonic soldering iron or the like is solidified for a predetermined time, and the test piece cross section of the prepared low-melting metal brazing material is observed, and the powder is observed. Check the optimal conditions according to the moving conditions of After maintaining the predetermined optimal time and temperature,
Cool to complete joining. During cooling, pressure may be applied as necessary.
【００１１】以上の操作により、低融点金属ろう材層中
のターゲット材に接する側はターゲット材と同材質の粉
体粒子を多く含み、バッキングプレート材に接する側は
低融点金属ろう材成分の多い接合層が形成されることに
なる。接合時、低融点金属ろう材中に添加した粉体の最
大粒子径を持つ粒子群がターゲット材とバッキングプレ
ート材の両方に接触するようになるので、接合層の厚さ
は、この粒子群によって決められることになる。By the above operation, the side in contact with the target material in the low melting point metal brazing material layer contains many powder particles of the same material as the target material, and the side in contact with the backing plate material has many low melting point metal brazing material components. A bonding layer will be formed. At the time of joining, the particles having the largest particle diameter of the powder added to the low melting point metal brazing material come into contact with both the target material and the backing plate material, so the thickness of the joining layer depends on the particles. It will be decided.
【００１２】[0012]
実施例１ ＩＴＯによる３８１×１２７×８ｍｍの寸法のターゲッ
ト材に超音波はんだごてを用いてＩｎろうを塗布し、同
様に純銅のバッキングプレート材にＩｎろうを塗布し
た。また、予め、ＩＴＯ焼結体を粉砕して篩で整粒して
得た４４μｍ〜５００μｍの粒度分布の粉体を用い、こ
の粉体とＩｎろう材の割合を２０重量％と８０重量％と
して、超音波はんだごてを使用して、粉体入りのＩｎろ
う材を調製した。この作業温度は１６０〜２２０℃の範
囲であった。この調製Ｉｎろう材をバッキングプレート
材に塗布し、ＩＴＯターゲット材を気泡に巻き込まない
ように注意しながら接合した。１６０℃で３０分保持し
た後、２０ｋｇの重錘を乗せて冷却した。その結果、接
合による反りは０．５ｍｍ以下で、超音波探傷による接
合欠陥検査ではクラックが認められず、接合率も９６％
を示し、良好であった。Example 1 In brazing was applied to a target material of 381 × 127 × 8 mm by ITO using an ultrasonic soldering iron, and In brazing was similarly applied to a pure copper backing plate material. In addition, a powder having a particle size distribution of 44 μm to 500 μm obtained by previously pulverizing and sieving the ITO sintered body and using a sieve was used, and the ratio of this powder to the In brazing material was set to 20% by weight and 80% by weight. A powdered In brazing material was prepared using an ultrasonic soldering iron. This working temperature was in the range of 160-220 ° C. This prepared In brazing material was applied to a backing plate material, and bonded while being careful not to involve the ITO target material in bubbles. After holding at 160 ° C. for 30 minutes, a weight of 20 kg was put thereon and cooled. As a result, the warpage due to bonding was 0.5 mm or less, no crack was observed in the bonding defect inspection by ultrasonic testing, and the bonding rate was 96%.
Was good.
【００１３】実施例２ 径が１５２ｍｍで厚さが８ｍｍの円板状のＢａＴｉＯ3
によるターゲット材と純銅によるバッキングプレート材
に実施例１と同様に濡らし処理としてＩｎろうを塗布し
た。ＢａＴｉＯ3 焼結体を粉砕して篩で整粒して４４μ
ｍ〜３００μｍの粉体を得た後、超音波はんだごてを使
用し、粉体１５重量％とＩｎろう材８５重量％の割合
で、Ｉｎろう材中に前記粉体を分散させた。このろう材
をバッキングプレート材に塗布し、ＢａＴｉＯ3 ターゲ
ット材を気泡を巻き込まないように注意しながら接合し
た。１６０℃で３０分保持した後、７．５ｋｇの重錘を
のせた状態で冷却した。その結果、接合による反りは
０．５ｍｍ以下で、超音波探傷による接合欠陥検査でク
ラックは認められず、接合率も９８％で良好であった。Example 2 Disk-shaped BaTiO 3 having a diameter of 152 mm and a thickness of 8 mm
In the same manner as in Example 1, an In braze was applied to a target material made of pure copper and a backing plate made of pure copper. The BaTiO 3 sintered body is pulverized and sized with a sieve to obtain 44 μm.
After obtaining a powder of m to 300 μm, the powder was dispersed in the In brazing material at a ratio of 15% by weight of the powder and 85% by weight of the In brazing material using an ultrasonic soldering iron. This brazing material was applied to a backing plate material, and a BaTiO 3 target material was bonded while being careful not to entrap bubbles. After holding at 160 ° C. for 30 minutes, the mixture was cooled with a 7.5 kg weight placed thereon. As a result, the warpage due to bonding was 0.5 mm or less, no crack was observed in the bonding defect inspection by ultrasonic flaw detection, and the bonding rate was 98%, which was good.
【００１４】実施例３ Ｔａ2 Ｏ5 による３８１×１２７×６ｍｍの寸法のター
ゲット材と純銅によるバッキングプレート材に実施例１
と同様に濡らし処理としてＩｎろうを塗布した。２０〜
５００μｍの粒度分布のＴａ2 Ｏ5 粉末を、超音波はん
だこてを使用し、粉末２５重量％とＩｎろう材７５％と
なる割合で、前記Ｉｎろう材中に分散させた。このろう
材をバッキングプレート材上に均一に塗布し、ターゲッ
ト材を気泡を巻き込まないように注意しながら接合し
た。１６０℃で３０分間保持した後、２０ｋｇの重錘を
のせた状態で冷却した。その結果、接合による反りは
０．５ｍｍ以下で、超音波探傷による接合欠陥検査では
クラックは認められず、接合率も９８％と良好であっ
た。Example 3 Example 1 was applied to a target material of 381 × 127 × 6 mm made of Ta 2 O 5 and a backing plate made of pure copper.
In the same manner as described above, In solder was applied as a wetting treatment. 20 ~
Ta 2 O 5 powder having a particle size distribution of 500 μm was dispersed in the In brazing material at a ratio of 25% by weight of powder and 75% of In brazing material using an ultrasonic soldering iron. This brazing material was uniformly applied on a backing plate material, and the target material was joined while being careful not to entrap air bubbles. After being kept at 160 ° C. for 30 minutes, it was cooled with a 20 kg weight placed thereon. As a result, the warpage due to bonding was 0.5 mm or less, no crack was observed in the bonding defect inspection by ultrasonic flaw detection, and the bonding ratio was 98%, which was good.
【００１５】比較例 ＩＴＯによる３９１×１２７×８ｍｍの寸法のターゲッ
ト材と純銅によるバッキングプレート材を用意し、実施
例と同様にＩｎろう材で濡らし処理を施した後、ろう材
として純Ｉｎを均一にバッキングプレート材に塗布し、
気泡を巻き込まないように、注意しながらターゲット材
を接合した。１６０℃で３０分保持した後、２０ｋｇの
重錘をのせた状態で冷却した。その結果、接合による反
りは、１．０ｍｍであり、超音波探傷による接合欠陥検
査でクラックは認められなかったが、接合率は９２％と
低い値を示した。Comparative Example A target material having a size of 391.times.127.times.8 mm made of ITO and a backing plate made of pure copper were prepared, wetted with an In brazing material in the same manner as in the example, and then pure In was uniformly used as a brazing material. To the backing plate material,
The target material was carefully bonded so that air bubbles were not involved. After holding at 160 ° C. for 30 minutes, cooling was performed with a 20 kg weight placed thereon. As a result, the warpage due to bonding was 1.0 mm, and no crack was observed in the bonding defect inspection by ultrasonic flaw detection, but the bonding rate showed a low value of 92%.
【００１６】[0016]
【発明の効果】本発明はバッキングプレート材と同じ材
質の粉体をろう材に混合した調製ろう材を使用するよう
にしたので、ターゲット材とバッキングプレート材との
接合において、熱膨張率の異なる両材料の接合界面にお
ける応力差を、ろう材層の構造を複合化、傾斜化するこ
とにより緩和して反りを防止し、ターゲット材の割れや
脱落を防止するという効果を奏する。粉体を球状とし、
粉体の粒度分布を０．０１〜０．５ｍｍ、粉体のろう材
中の含有量を５〜４０％とすることにより、確実な反り
防止が図れ、さらに、粉体をターゲット側に密に分布さ
せるようにすることにより、より確実に反りの防止を図
れるという効果を奏する。According to the present invention, a brazing material prepared by mixing powder of the same material as the backing plate material with the brazing material is used. Therefore, in joining the target material and the backing plate material, the coefficient of thermal expansion differs. The effect of reducing the stress difference at the joint interface between the two materials by compounding and inclining the structure of the brazing material layer to prevent warpage and preventing the target material from cracking or falling off. Make the powder spherical,
By setting the particle size distribution of the powder to 0.01 to 0.5 mm and the content of the powder in the brazing material to 5 to 40%, reliable warpage can be prevented, and the powder can be densely placed on the target side. By distributing, there is an effect that warpage can be more reliably prevented.
Claims (6)
の接合界面に前記ターゲット材と同じ材質の粉体を分散
した低融点金属ろう材による接合層を介在させたことを
特徴とするスパッタリングターゲット。1. A sputtering target wherein a bonding layer made of a low melting point brazing material in which powder of the same material as the target material is dispersed is interposed at a bonding interface between the target material and the backing plate material.
分布をなし、前記粉体の形状は球状体であり、且つ、前
記粉体の前記低融点金属ろう材中の含有量は５〜４０重
量％であることを特徴とする請求項１に記載のスパッタ
リングターゲット。2. The powder has a particle size distribution of 0.01 to 0.5 mm, the shape of the powder is spherical, and the content of the powder in the low melting point brazing metal is: The sputtering target according to claim 1, wherein the content is 5 to 40% by weight.
ット材側に密に分散していることを特徴とする請求項２
又は３に記載のスパッタリングターゲット。3. The method according to claim 2, wherein the powder is densely dispersed in the bonding layer toward the target material.
Or the sputtering target of 3.
の接合界面に前記ターゲット材と同じ材質の粉体を分散
した低融点金属ろう材を介在させ、加熱接合して前記粉
体を分散させた接合層を得ることを特徴とするスパッタ
リングターゲットの接合方法。4. A bonding layer in which a low-melting metal brazing material in which powder of the same material as that of the target material is dispersed is interposed at a bonding interface between the target material and the backing plate material, and the powder is dispersed by heating and bonding. A method for joining sputtering targets, characterized by obtaining
分布をなし、前記粉体の形状は球状体であり、且つ、前
記粉体の前記低融点金属ろう材中の含有量は５〜４０重
量％とすることを特徴とする請求項４に記載のスパッタ
リングターゲットの接合方法。5. The powder has a particle size distribution of 0.01 to 0.5 mm, the shape of the powder is spherical, and the content of the powder in the low-melting metal brazing material is: The method for joining sputtering targets according to claim 4, wherein the content is 5 to 40% by weight.
る比重差を利用して前記粉体の粗密差を形成させ、前記
接合層中の前記粉体が前記ターゲット材側において密に
なるようにすることを特徴とする請求項４又は５に記載
のスパッタリングターゲットの接合方法。6. A difference in the density of the powder is formed by utilizing a specific gravity difference in a molten layer of the low-melting metal brazing material so that the powder in the bonding layer becomes dense on the target material side. The method for bonding a sputtering target according to claim 4 or 5, wherein:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28296496A JP3880107B2 (en) | 1996-10-04 | 1996-10-04 | Sputtering target and bonding method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28296496A JP3880107B2 (en) | 1996-10-04 | 1996-10-04 | Sputtering target and bonding method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10110266A true JPH10110266A (en) | 1998-04-28 |
| JP3880107B2 JP3880107B2 (en) | 2007-02-14 |
Family
ID=17659421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28296496A Expired - Fee Related JP3880107B2 (en) | 1996-10-04 | 1996-10-04 | Sputtering target and bonding method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3880107B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0952031A2 (en) | 1998-04-21 | 1999-10-27 | Fuji Kiko Company Limited | Seat reclining device |
| JP2009203511A (en) * | 2008-02-27 | 2009-09-10 | Fujikura Ltd | Oxide target for laser vapor deposition |
-
1996
- 1996-10-04 JP JP28296496A patent/JP3880107B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0952031A2 (en) | 1998-04-21 | 1999-10-27 | Fuji Kiko Company Limited | Seat reclining device |
| JP2009203511A (en) * | 2008-02-27 | 2009-09-10 | Fujikura Ltd | Oxide target for laser vapor deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3880107B2 (en) | 2007-02-14 |
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