JP3880107B2 - Sputtering target and bonding method thereof - Google Patents
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Description
【０００１】
【発明の属する技術分野】
本発明はスパッタリングにより薄膜を作成するためのターゲット材をバッキングプレート材にろう接により接合するスパッタリングターゲット及びその接合方法に関する。
【０００２】
【従来の技術】
スパッタリングターゲットは、強度上の補強等の目的でターゲット部材をバッキングプレートにろう材により接合して作製される。
ろう材としては、Ｉｎろう、低融点合金はんだ、銀ろう等が使用されている。接合の手順としては、ターゲット材とバッキングプレート材の接合面を、予め、ろう材の融点以上の温度に予熱した後、その接合面に十分な量のＩｎろう等のろう材を塗布してターゲット材とバッキングプレート材を重ね合わせ、圧着しながら冷却して接合を完了させるようにしている。
【０００３】
この接合時に、接合面にガスが残留すると、無接合部を生成し、また、ターゲット材とバッキングプレート材間の接合層の厚さが不均一になることがあると、このスパッタリングターゲットを用いてスパッタリングを行う際、スパッタリングターゲットの温度分布が不均一になり、基板における薄膜形成が妨げられると共に、スパッタリングターゲット自体の剥離や損傷等を招来する。このため、両材料の接合界面に炭素繊維、ガラス繊維を介在させて、接合時の接合界面におけるガス残留を防止する（特開平３−１１１５６３号公報）、また、両材料の接合界面に所定径の線、棒、球状物等を介在させて、ターゲット材とバッキングプレート材の平行度を保つ（特開平８−１７０１７０号公報）等の技術が提案されている。
【０００４】
【発明が解決しようとする課題】
しかしながら、このような接合技術にあっては、接合時に、圧着接合状態からの冷却過程においてバッキングプレート材にターゲット材との収縮量の差による反りをもたらすことがあるという問題があった。反りを生じたスパッタリングターゲットはスパッタリング装置への装着に支障があり、また、ターゲット材の機械的強度が弱い場合にはターゲット材に割れを来して使用不能になることがあり、さらに、スパッタ装置に装着できたとしも、使用中にクラックが発生するおそれがあり、またさらに、このようにターゲット材にクラックが発生すると、成膜不能となったり、薄膜に異物が付着するなど重大な事故を起こすという危険があった。
本発明は、このような問題に鑑み、スパッタリングターゲットの作製にあたり、ターゲット材とバッキングプレート材とをろう材を用いて接合する際に、接合に起因する両材料間の収縮率または熱膨張率の差による発生応力を低減させることにより反りの発生を防止することを目的とするものである。
【０００５】
【課題を解決するための手段】
上記の目的を解決するため、本発明は、ターゲット材とバッキングプレート材との接合界面に前記ターゲット材と同じ材質の粉体を該ターゲット材側に密に分散した低融点金属ろう材による接合層を介在させたことを特徴とするスパッタリングターゲットを、また、前記粉体は０.０１〜０.５ｍｍの粒度分布をなし、前記粉体の形状は球状体であり、且つ、前記粉体の前記低融点金属ろう材中の含有量は５〜４０重量％である上記スパッタリングターゲットを提供する。
【０００６】
さらに、本発明は、ターゲット材とバッキングプレート材との接合界面に前記ターゲット材と同じ材質の粉体を分散した低融点金属ろう材を介在させ、加熱接合して前記粉体を分散させた接合層を得る接合方法において、前記低融点金属ろう材の溶融層内における比重差を利用して前記粉体の粗密差を形成させ、前記接合層中の前記粉体が前記ターゲット材側において密になるようにすることを特徴とするスパッタリングターゲットの接合方法を、また、ターゲット材とバッキングプレート材との接合界面に前記ターゲット材と同じ材質の粉体を分散した低融点金属ろう材を介在させ、加熱接合して前記粉体を分散させた接合層を得る接合方法において、前記低融点金属ろう材の溶融層内における該ろう材との比重差を利用して前記粉体の粗密差を形成させ、前記接合層中の前記粉体が前記ターゲット材側において密になるようにした後に冷却することを特徴とするスパッタリングターゲットの接合方法を、そして、前記粉体は０.０１〜０.５ｍｍの粒度分布をなし、前記粉体の形状は球状体であり、且つ、前記粉体の前記低融点金属ろう材中の含有量は５〜４０重量％とすることを特徴とする上記スパッタリングターゲットの接合方法を提供するものである。
【０００７】
【発明の実施の形態】
ターゲット材とバッキングプレート材とをろう材を用いて接合し、スパッタリングターゲットを作製する場合において、Ｉｎろう材等低融点金属ろう材中にターゲット材と同じ材質の粉体を分散した状態になるようにした調製ろう材をターゲット材とバッキングプレート材の接合面に塗布した後、両材料を接合し、低融点金属ろう材の融点以上の温度で一定時間保持してから冷却することにより、界面の接合層にターゲット材に近い熱膨張率をもたせてターゲット材とバッキングプレート材との熱膨張率の差による応力を緩和することができる。例えば、ターゲット材の比重が溶融低融点金属ろう材より低い場合は、ターゲット材を上面にして前記の調製ろう材を塗布してバッキングプレート材を接合するなどし、低融点金属ろう材の融点以上の温度で一定時間保持することにより、溶融ろう材中の分散粉体粒子をターゲット材側にかたよらせ、接合層中の材料分布に傾斜をもたせた後、冷却することにより、接合層のターゲット材側にそのターゲット材に近い熱膨張率をもたせて効果的に応力を緩和することができ、反りの発生を防止することができる。
【０００８】
本発明は、無酸素銅等のバッキングプレート材に対して熱膨張率に大きな差のあるＩＴＯ（Ｉｎ−Ｓｉ系酸化物）、ＳｉＯ2 、ＢａＴｉＯ3 、ＰＬＺＴ（イットリウムアルミニウムガーネット）等のセラミックス系ターゲット材を接合する場合において特に有効である。ろう材としては、Ｉｎ、はんだ等の低融点金属が用いられる。
上記粉体入りのＩｎろう材等低融点金属ろう材は、好ましくは、接合対象とするターゲット材の一部を粉砕して０．０１〜０．５ｍｍの粒度分布を持つ粉体を作成し、この粉体を５〜４０重量％の含有割合になるように、融点以上の温度に加熱した低融点金属ろう材に加え、超音波ごてを使用するなどして溶融低融点金属ろう材中に分散させて調製する。
【０００９】
粉体の粒度が０．０１ｍｍ未満であると、微粉のため凝集性が強く、ろう材に分散し難い。また、この粒度が０．５ｍｍを越えると、接合時のろう材の厚みが粉体の最大粒子サイズにより決まることから、ろう材の消費量が多くなり、経済的でない。さらに、粉体含有量が５重量％未満であると、緩衝材としての効果が薄れ、４０重量％を越えると、ろう材の粘度が上がり過ぎ、接合作業が困難になる。
【００１０】
接合作業においては、予めターゲット材とバッキングプレート材は低融点金属ろう材で濡らし処理しておいたものを使用することが好ましく、このように濡らし処理をしたバッキングプレート材を加熱した後、前記の調製した低融点金属ろう材をバッキングプレート材に対して均一になるように塗布し、次いで、このバッキングプレート材上にターゲット材を接合し、所定時間、低融点金属ろう材の融点以上の温度で保持し、低融点金属ろう材中の粒子がターゲット材側に移動するのを待つ。時間としては長いほうがよいが、通常は、３０分程度でよい。粉体粒子のＩｎろう材内移動の確認は予めテストピースで行う。即ち、同じ配合割合で粉体を超音波はんだごて等で分散させて調製した低融点金属ろう材を所定時間で固化させ、その調製低融点金属ろう材のテストピース断面を観察し、粉体の移動状況により最適条件を確認する。
所定の最適時間及び温度を保持した後、冷却して接合を完了する。冷却時は、必要により加圧してもよい。
【００１１】
以上の操作により、低融点金属ろう材層中のターゲット材に接する側はターゲット材と同材質の粉体粒子を多く含み、バッキングプレート材に接する側は低融点金属ろう材成分の多い接合層が形成されることになる。接合時、低融点金属ろう材中に添加した粉体の最大粒子径を持つ粒子群がターゲット材とバッキングプレート材の両方に接触するようになるので、接合層の厚さは、この粒子群によって決められることになる。
【００１２】
【実施例】
実施例１
ＩＴＯによる３８１×１２７×８ｍｍの寸法のターゲット材に超音波はんだごてを用いてＩｎろうを塗布し、同様に純銅のバッキングプレート材にＩｎろうを塗布した。また、予め、ＩＴＯ焼結体を粉砕して篩で整粒して得た４４μｍ〜５００μｍの粒度分布の粉体を用い、この粉体とＩｎろう材の割合を２０重量％と８０重量％として、超音波はんだごてを使用して、粉体入りのＩｎろう材を調製した。この作業温度は１６０〜２２０℃の範囲であった。この調製Ｉｎろう材をバッキングプレート材に塗布し、ＩＴＯターゲット材を気泡に巻き込まないように注意しながら接合した。１６０℃で３０分保持した後、２０ｋｇの重錘を乗せて冷却した。その結果、接合による反りは０．５ｍｍ以下で、超音波探傷による接合欠陥検査ではクラックが認められず、接合率も９６％を示し、良好であった。
【００１３】
実施例２
径が１５２ｍｍで厚さが８ｍｍの円板状のＢａＴｉＯ3 によるターゲット材と純銅によるバッキングプレート材に実施例１と同様に濡らし処理としてＩｎろうを塗布した。ＢａＴｉＯ3 焼結体を粉砕して篩で整粒して４４μｍ〜３００μｍの粉体を得た後、超音波はんだごてを使用し、粉体１５重量％とＩｎろう材８５重量％の割合で、Ｉｎろう材中に前記粉体を分散させた。このろう材をバッキングプレート材に塗布し、ＢａＴｉＯ3 ターゲット材を気泡を巻き込まないように注意しながら接合した。１６０℃で３０分保持した後、７．５ｋｇの重錘をのせた状態で冷却した。その結果、接合による反りは０．５ｍｍ以下で、超音波探傷による接合欠陥検査でクラックは認められず、接合率も９８％で良好であった。
【００１４】
実施例３
Ｔａ2 Ｏ5 による３８１×１２７×６ｍｍの寸法のターゲット材と純銅によるバッキングプレート材に実施例１と同様に濡らし処理としてＩｎろうを塗布した。２０〜５００μｍの粒度分布のＴａ2 Ｏ5 粉末を、超音波はんだこてを使用し、粉末２５重量％とＩｎろう材７５％となる割合で、前記Ｉｎろう材中に分散させた。このろう材をバッキングプレート材上に均一に塗布し、ターゲット材を気泡を巻き込まないように注意しながら接合した。１６０℃で３０分間保持した後、２０ｋｇの重錘をのせた状態で冷却した。その結果、接合による反りは０．５ｍｍ以下で、超音波探傷による接合欠陥検査ではクラックは認められず、接合率も９８％と良好であった。
【００１５】
比較例
ＩＴＯによる３９１×１２７×８ｍｍの寸法のターゲット材と純銅によるバッキングプレート材を用意し、実施例と同様にＩｎろう材で濡らし処理を施した後、ろう材として純Ｉｎを均一にバッキングプレート材に塗布し、気泡を巻き込まないように、注意しながらターゲット材を接合した。１６０℃で３０分保持した後、２０ｋｇの重錘をのせた状態で冷却した。その結果、接合による反りは、１．０ｍｍであり、超音波探傷による接合欠陥検査でクラックは認められなかったが、接合率は９２％と低い値を示した。
【００１６】
【発明の効果】
本発明はバッキングプレート材と同じ材質の粉体をろう材に混合した調製ろう材を使用するようにしたので、ターゲット材とバッキングプレート材との接合において、熱膨張率の異なる両材料の接合界面における応力差を、ろう材層の構造を複合化、傾斜化することにより緩和して反りを防止し、ターゲット材の割れや脱落を防止するという効果を奏する。
粉体を球状とし、粉体の粒度分布を０．０１〜０．５ｍｍ、粉体のろう材中の含有量を５〜４０％とすることにより、確実な反り防止が図れ、さらに、粉体をターゲット側に密に分布させるようにすることにより、より確実に反りの防止を図れるという効果を奏する。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a sputtering target for bonding a target material for forming a thin film by sputtering to a backing plate material by brazing and a bonding method thereof.
[0002]
[Prior art]
The sputtering target is manufactured by bonding a target member to a backing plate with a brazing material for the purpose of reinforcing the strength.
As the brazing material, In brazing, low melting point alloy solder, silver brazing or the like is used. As a joining procedure, the joining surface of the target material and the backing plate material is preheated to a temperature equal to or higher than the melting point of the brazing material in advance, and then a sufficient amount of brazing material such as In brazing is applied to the joining surface. The material and the backing plate material are overlapped and cooled while being crimped to complete the joining.
[0003]
If gas remains on the bonding surface during this bonding, a non-bonded portion is generated, and the thickness of the bonding layer between the target material and the backing plate material may be uneven. When performing sputtering, the temperature distribution of the sputtering target becomes non-uniform, which prevents the formation of a thin film on the substrate, and causes the peeling or damage of the sputtering target itself. For this reason, carbon fibers and glass fibers are interposed at the bonding interface between the two materials to prevent gas residue at the bonding interface during bonding (Japanese Patent Laid-Open No. 3-111563), and a predetermined diameter is provided at the bonding interface between the two materials. A technique has been proposed in which the parallelism between the target material and the backing plate material is maintained (Japanese Patent Laid-Open No. Hei 8-170170) by interposing a wire, a rod, a spherical object, and the like.
[0004]
[Problems to be solved by the invention]
However, in such a joining technique, there has been a problem that, during joining, the backing plate material may be warped due to a difference in shrinkage from the target material during the cooling process from the crimping joined state. The warped sputtering target has a hindrance to the mounting to the sputtering apparatus, and if the target material has low mechanical strength, the target material may crack and become unusable. May cause cracks during use, and furthermore, if cracks occur in the target material in this way, film formation may become impossible or foreign matter may adhere to the thin film. There was a danger of waking up.
In view of such a problem, the present invention, when producing a sputtering target, when joining the target material and the backing plate material using a brazing material, the shrinkage rate or the thermal expansion coefficient between the two materials due to the joining. The object is to prevent the occurrence of warping by reducing the stress generated by the difference.
[0005]
[Means for Solving the Problems]
In order to solve the above-mentioned object, the present invention provides a bonding layer made of a low melting point metal brazing material in which powder of the same material as the target material is densely dispersed on the target material side at the bonding interface between the target material and the backing plate material. The powder has a particle size distribution of 0.01 to 0.5 mm, the powder has a spherical shape, and the powder The content of the low-melting-point metal brazing material is 5 to 40% by weight.
[0006]
Furthermore, the present invention provides a bonding method in which a low melting point metal brazing material in which powder of the same material as the target material is dispersed is interposed at the bonding interface between the target material and the backing plate material, and the powder is dispersed by heat bonding. In the joining method for obtaining a layer, a difference in density of the powder is formed by utilizing a specific gravity difference in the molten layer of the low melting point metal brazing material, and the powder in the joining layer is densely formed on the target material side. Sputtering target bonding method characterized by becoming , interposing a low melting point metal brazing material in which powder of the same material as the target material is dispersed at the bonding interface between the target material and the backing plate material, the joining method of obtaining a bonding layer obtained by dispersing the powder heat-bonding to the coarse of the powder by utilizing the difference in specific gravity between the said brazing material in the melting layer of low-melting brazing metal To form a difference, a method of bonding a sputtering target in which the powder of the bonding layer, characterized in that the cooling after the arranged densely in the target material side, and said powder 0.01 The particle size distribution of 0.5 mm, the shape of the powder is a spherical body, and the content of the powder in the low melting point metal brazing material is 5 to 40% by weight A method for bonding a sputtering target is provided.
[0007]
DETAILED DESCRIPTION OF THE INVENTION
When joining a target material and a backing plate material using a brazing material to produce a sputtering target, the powder of the same material as the target material is dispersed in a low melting point metal brazing material such as an In brazing material. After applying the prepared brazing material to the joining surface of the target material and the backing plate material, the two materials are joined together, held at a temperature above the melting point of the low melting point metal brazing material for a certain period of time, and then cooled. By giving the bonding layer a thermal expansion coefficient close to that of the target material, stress due to the difference in the thermal expansion coefficient between the target material and the backing plate material can be relieved. For example, when the specific gravity of the target material is lower than that of the molten low melting point metal brazing material, the above-mentioned prepared brazing material is applied with the target material as the upper surface and the backing plate material is joined. By holding at a temperature for a certain period of time, the dispersed powder particles in the molten brazing material are made to contact the target material side, the material distribution in the bonding layer is inclined, and then cooled, so that the target material of the bonding layer is cooled. The thermal expansion coefficient close to that of the target material can be provided on the side, so that the stress can be effectively relieved and the occurrence of warpage can be prevented.
[0008]
The present invention relates to ceramic targets such as ITO (In-Si oxide), SiO 2 , BaTiO 3 , PLZT (yttrium aluminum garnet) which have a large difference in thermal expansion coefficient with respect to a backing plate material such as oxygen-free copper. This is particularly effective when joining materials. As the brazing material, a low melting point metal such as In or solder is used.
The low-melting-point metal brazing material such as In brazing material containing powder is preferably a powder having a particle size distribution of 0.01 to 0.5 mm by pulverizing a part of the target material to be joined, In addition to the low melting point metal brazing material heated to a temperature equal to or higher than the melting point so that the content of the powder is 5 to 40% by weight, in the molten low melting point metal brazing material by using an ultrasonic iron or the like. Prepare by dispersing.
[0009]
If the particle size of the powder is less than 0.01 mm, the powder is fine and highly cohesive and difficult to disperse in the brazing material. On the other hand, if this particle size exceeds 0.5 mm, the thickness of the brazing material at the time of joining is determined by the maximum particle size of the powder, so that the consumption of the brazing material increases, which is not economical. Further, if the powder content is less than 5% by weight, the effect as a buffering material is reduced, and if it exceeds 40% by weight, the viscosity of the brazing material is excessively increased and the joining operation becomes difficult.
[0010]
In the joining operation, it is preferable to use the target material and the backing plate material that have been wetted with a low melting point metal brazing material in advance, and after heating the wetted backing plate material, The prepared low melting point metal brazing material is applied uniformly to the backing plate material, and then the target material is bonded onto the backing plate material, and at a temperature equal to or higher than the melting point of the low melting point metal brazing material for a predetermined time. Hold and wait for the particles in the low melting point metal brazing material to move to the target material side. The longer the time, the better, usually around 30 minutes. Confirmation of the movement of the powder particles in the In brazing material is performed in advance with a test piece. That is, a low melting point metal brazing material prepared by dispersing powder with an ultrasonic soldering iron or the like at the same blending ratio is solidified in a predetermined time, and a cross section of the test piece of the prepared low melting point metal brazing material is observed. The optimum conditions are confirmed according to the movement situation of.
After maintaining the predetermined optimum time and temperature, cooling is completed to complete the joining. During cooling, pressurization may be applied as necessary.
[0011]
By the above operation, the side in contact with the target material in the low melting point metal brazing material layer contains a lot of powder particles of the same material as the target material, and the side in contact with the backing plate material has a bonding layer with a large amount of low melting point metal brazing material component. Will be formed. During bonding, the particle group having the maximum particle size of the powder added to the low melting point metal brazing material comes into contact with both the target material and the backing plate material, so the thickness of the bonding layer depends on this particle group. It will be decided.
[0012]
【Example】
Example 1
In solder was applied to a target material having a size of 381 × 127 × 8 mm made of ITO using an ultrasonic soldering iron, and In solder was similarly applied to a pure copper backing plate material. In addition, a powder having a particle size distribution of 44 μm to 500 μm obtained by pulverizing an ITO sintered body in advance and sizing with a sieve was used, and the ratio of this powder to the In brazing material was 20 wt% and 80 wt%. Using an ultrasonic soldering iron, a powdery In brazing material was prepared. This working temperature ranged from 160 to 220 ° C. This prepared In brazing material was applied to a backing plate material and joined with care so that the ITO target material was not caught in the bubbles. After maintaining at 160 ° C. for 30 minutes, a 20 kg weight was placed and cooled. As a result, the warpage due to bonding was 0.5 mm or less, and no crack was observed in the bonding defect inspection by ultrasonic flaw detection. The bonding rate was 96%, which was good.
[0013]
Example 2
As in Example 1, In brazing was applied to a target material made of disc-shaped BaTiO 3 having a diameter of 152 mm and a thickness of 8 mm and a backing plate material made of pure copper in the same manner as in Example 1. The BaTiO 3 sintered body is pulverized and sized with a sieve to obtain a powder of 44 μm to 300 μm. Then, an ultrasonic soldering iron is used, and the ratio of the powder is 15% by weight and the In brazing material is 85% by weight. The powder was dispersed in In brazing material. This brazing material was applied to the backing plate material, and the BaTiO 3 target material was joined with care so as not to entrap bubbles. After maintaining at 160 ° C. for 30 minutes, it was cooled with a 7.5 kg weight placed on it. As a result, warpage due to bonding was 0.5 mm or less, no crack was observed in the bonding defect inspection by ultrasonic flaw detection, and the bonding rate was 98%, which was good.
[0014]
Example 3
It was applied In brazing as well as wet treatment as in Example 1 to a backing plate material by the target material and the pure copper dimensions of 381 × 127 × 6 mm by Ta 2 O 5. A Ta 2 O 5 powder having a particle size distribution of 20 to 500 μm was dispersed in the In brazing material at a ratio of 25% by weight of powder and 75% of In brazing material using an ultrasonic soldering iron. This brazing material was uniformly applied onto the backing plate material, and the target material was joined with care so as not to entrap bubbles. After maintaining at 160 ° C. for 30 minutes, it was cooled with a 20 kg weight placed on it. As a result, warpage due to bonding was 0.5 mm or less, no crack was observed in the bonding defect inspection by ultrasonic flaw detection, and the bonding rate was as good as 98%.
[0015]
Comparative Example A target material having a size of 391 × 127 × 8 mm made of ITO and a backing plate material made of pure copper were prepared. After wetting treatment with In brazing material in the same manner as in the example, pure In was uniformly used as the brazing plate. The target material was bonded to the material with care so as not to entrain air bubbles. After maintaining at 160 ° C. for 30 minutes, it was cooled with a 20 kg weight placed on it. As a result, the warpage due to bonding was 1.0 mm, and no crack was observed in the bonding defect inspection by ultrasonic flaw detection, but the bonding rate was as low as 92%.
[0016]
【The invention's effect】
Since the present invention uses the prepared brazing material in which the powder of the same material as the backing plate material is mixed with the brazing material, in the joining of the target material and the backing plate material, the joining interface between the two materials having different thermal expansion coefficients. The stress difference is reduced by compounding and inclining the structure of the brazing material layer to prevent warping and to prevent the target material from cracking or falling off.
By making the powder spherical, the particle size distribution of the powder is 0.01 to 0.5 mm, and the content of the powder in the brazing material is 5 to 40%, it is possible to surely prevent warping, and further, the powder By closely distributing to the target side, there is an effect that warpage can be prevented more reliably.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28296496A JP3880107B2 (en) | 1996-10-04 | 1996-10-04 | Sputtering target and bonding method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28296496A JP3880107B2 (en) | 1996-10-04 | 1996-10-04 | Sputtering target and bonding method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10110266A JPH10110266A (en) | 1998-04-28 |
| JP3880107B2 true JP3880107B2 (en) | 2007-02-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28296496A Expired - Fee Related JP3880107B2 (en) | 1996-10-04 | 1996-10-04 | Sputtering target and bonding method thereof |
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| Country | Link |
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| JP (1) | JP3880107B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11299563A (en) | 1998-04-21 | 1999-11-02 | Fuji Kiko Co Ltd | Play prevention of seat reclining device for vehicle and its structure |
| JP2009203511A (en) * | 2008-02-27 | 2009-09-10 | Fujikura Ltd | Oxide target for laser vapor deposition |
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1996
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| JPH10110266A (en) | 1998-04-28 |
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