JPH10107116A - Substrate treating device - Google Patents

Substrate treating device

Info

Publication number
JPH10107116A
JPH10107116A JP25842896A JP25842896A JPH10107116A JP H10107116 A JPH10107116 A JP H10107116A JP 25842896 A JP25842896 A JP 25842896A JP 25842896 A JP25842896 A JP 25842896A JP H10107116 A JPH10107116 A JP H10107116A
Authority
JP
Japan
Prior art keywords
wafer
substrate
plate
chamber
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25842896A
Other languages
Japanese (ja)
Inventor
Yukinori Yuya
幸則 油谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP25842896A priority Critical patent/JPH10107116A/en
Publication of JPH10107116A publication Critical patent/JPH10107116A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To improve the yield by including a plate for carrying a wafer between a carrying member and the wafer and treating the wafer in either the reaction chamber of the cooling chamber for each plate for carrying the wafer and hence preventing the wafer from being cracked on transportation, at the same time carrying only the wafer from a reaction chamber or a cooling chamber, and preventing the wafer from being contaminated with particles during transportation. SOLUTION: A plate 1 for carrying a wafer is carried between a reaction chamber and a cooling chamber 8 by a carrying member 6, while a wafer 5 is placed on the plate 1. A wafer support part 3 that supports the wafer 5 in dot shape in contact and consists of an inclination surface 4 is provided on the plate 1 for carrying the wafer. The plate 1 for carrying the wafer and the wafer 5 being carried on together are separated and supported by a wafer support stand 7 in the reaction room of the cooling room 8 so that only the wafer 5 can be supported by the carrying member 6.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は基板処理装置に係
り、特に基板搬送用プレートごと基板を処理して搬送す
る基板処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus that processes and transports a substrate together with a substrate transport plate.

【0002】[0002]

【従来の技術】図5は、従来のウェーハ処理装置である
枚葉式半導体製造装置の平面図である。搬送室11の周
囲にロードロック室12、冷却室13、反応室14が設
けられ、搬送室11にはウェーハ搬送ロボット15が設
けられている。ウェーハ搬送ロボット15は搬送アーム
16を備え、その搬送アーム16の先端にはツィーザと
呼ばれるウェーハ5を載置する搬送部材17が取り付け
られている。ウェーハ5は、図6に示すように、搬送部
材17によってすくい上げられ、2本の指17a、17
bと面接触して支持される。
2. Description of the Related Art FIG. 5 is a plan view of a single wafer type semiconductor manufacturing apparatus which is a conventional wafer processing apparatus. A load lock chamber 12, a cooling chamber 13, and a reaction chamber 14 are provided around the transfer chamber 11, and a wafer transfer robot 15 is provided in the transfer chamber 11. The wafer transfer robot 15 has a transfer arm 16, and a transfer member 17 called a tweezer for mounting the wafer 5 is attached to the tip of the transfer arm 16. As shown in FIG. 6, the wafer 5 is picked up by the transfer member 17 and has two fingers 17a, 17a.
b and is supported in surface contact.

【0003】上記ウェーハ5を処理するには、ウェーハ
搬送ロボット15の搬送部材17をロードロック室12
内に挿入し、ウェーハカセット18のウェーハ5を搬送
部材17で支持して反応室14内に搬入する。反応室1
4内でのウェーハ5の処理が完了すると、ウェーハ搬送
ロボット15により搬送部材16を反応室14内に挿入
し、処理済みのウェーハ5を搬送部材17で支持し、反
応室14からウェーハ5を搬出後、ロードロック室12
に戻す。このとき、ウェーハ5の処理でウェーハ5が高
温になる場合は、ロードロック室12に戻す前に、冷却
室13で一旦冷却し、冷却後ロードロック室12に戻し
ていた。
In order to process the wafer 5, the transfer member 17 of the wafer transfer robot 15 is moved to the load lock chamber 12.
The wafer 5 in the wafer cassette 18 is carried into the reaction chamber 14 while being supported by the transfer member 17. Reaction chamber 1
When the processing of the wafer 5 in the wafer 4 is completed, the transfer member 16 is inserted into the reaction chamber 14 by the wafer transfer robot 15, the processed wafer 5 is supported by the transfer member 17, and the wafer 5 is unloaded from the reaction chamber 14. Later, load lock room 12
Return to At this time, when the temperature of the wafer 5 becomes high due to the processing of the wafer 5, the wafer 5 is once cooled in the cooling chamber 13 before returning to the load lock chamber 12, and then returned to the load lock chamber 12 after cooling.

【0004】[0004]

【発明が解決しようとする課題】上述したように従来の
ウェーハ処理装置では、スループット向上等の理由によ
り、反応室14で成膜後、表面温度が高いウェーハ5を
ロードロック室12に戻す前に冷却室13へ搬送してい
た。
As described above, in the conventional wafer processing apparatus, before film formation in the reaction chamber 14 and before returning the wafer 5 having a high surface temperature to the load lock chamber 12, It was transported to the cooling chamber 13.

【0005】しかし、成膜中、搬送部材17は常温の搬
送室11内で待機しているため、その搬送部材17を使
ってウェーハ15を取り出すと、ウェーハ5と搬送部材
17の温度差の影響によりウェーハ5に亀裂(スリップ
とも呼ばれている)が入るという問題があった。また、
搬送部材17によりウェーハ5を直接すくい上げて搬送
するため、搬送時の衝撃等によってもウェーハ5に亀裂
が入るという問題があった。
However, since the transfer member 17 is waiting in the transfer chamber 11 at room temperature during the film formation, when the wafer 15 is taken out using the transfer member 17, the influence of the temperature difference between the wafer 5 and the transfer member 17. Therefore, there is a problem that a crack (also called a slip) is formed in the wafer 5. Also,
Since the wafer 5 is directly picked up and transported by the transport member 17, there is a problem that the wafer 5 is cracked by an impact or the like during the transport.

【0006】また、ウェーハ5へのパーティクルの付着
は、ウェーハ5と搬送部材17との接触面積に比例する
が、ウェーハ5は搬送部材17に面接触しているため、
パーティクルの付着が多いという問題もあった。
The adhesion of particles to the wafer 5 is proportional to the contact area between the wafer 5 and the transfer member 17, but since the wafer 5 is in surface contact with the transfer member 17,
There was also a problem that a large amount of particles adhered.

【0007】本発明の目的は、上述した従来技術の問題
を解消して、基板に亀裂が入るのを防ぐとともに、基板
がパーティクルに汚染されることを防止して、歩留りを
向上させることができる基板処理装置を提供することに
ある。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art, to prevent the substrate from being cracked, and to prevent the substrate from being contaminated by particles, thereby improving the yield. It is to provide a substrate processing apparatus.

【0008】また、本発明の目的は、反応室または冷却
室に基板搬送用プレートおよびウェーハを一緒に搬入し
ても、処理後基板だけを搬出することができる基板処理
装置を提供することにある。
Another object of the present invention is to provide a substrate processing apparatus capable of carrying out only a processed substrate even if a substrate carrying plate and a wafer are carried together into a reaction chamber or a cooling chamber. .

【0009】[0009]

【課題を解決するための手段】本発明は、基板に成膜す
る反応室と基板を冷却する冷却室との間を、基板搬送用
プレート上に基板を載せた状態で搬送部材によって搬送
し、前記反応室または冷却室に基板搬送用プレートごと
基板を搬入して成膜または冷却する基板処理装置におい
て、上記基板搬送用プレートに基板を線接触支持する斜
面からなる基板支持部を設けたことを特徴とする基板処
理装置である。
According to the present invention, a substrate is transported between a reaction chamber for forming a film on a substrate and a cooling chamber for cooling the substrate by a transport member while the substrate is placed on a substrate transport plate. In the substrate processing apparatus for loading and cooling the substrate together with the substrate transport plate into the reaction chamber or the cooling chamber, the substrate transport plate may be provided with a substrate support portion having a slope for linearly supporting the substrate in line contact. It is a substrate processing apparatus characterized by the following.

【0010】基板支持部により基板を基板搬送用プレー
ト上に線接触で支持すると、基板搬送時にパーティクル
の発生を抑制することができる。また、基板搬送用プレ
ートごと基板を処理するため、基板搬送用プレートがバ
ッファとなり、反応室と冷却室間の搬送部材による搬送
時に基板に亀裂が入るのを有効に防止することができ
る。
When the substrate is supported by the substrate support on the substrate transfer plate in line contact, the generation of particles during the transfer of the substrate can be suppressed. In addition, since the substrate is processed together with the substrate transport plate, the substrate transport plate serves as a buffer, and it is possible to effectively prevent the substrate from being cracked when transported by the transport member between the reaction chamber and the cooling chamber.

【0011】特に、上記基板支持部を3箇所点状に設
け、これらを正三角形の頂点に配置することが好まし
い。基板支持部は円周上に連続して設けてもよいが、基
板支持部を3箇所点状に設け、これらを正三角形の頂点
に配置すると、パーティクルの発生を一層抑制すること
ができ、しかも基板のバランスがよく、搬送、移載時に
おける基板のずれを防止できる。
In particular, it is preferable that the substrate supporting portions are provided at three points, and these are disposed at the vertices of an equilateral triangle. The substrate supporting portions may be provided continuously on the circumference. However, if the substrate supporting portions are provided at three points and arranged at the vertices of an equilateral triangle, generation of particles can be further suppressed, and The balance of the substrate is good, and the displacement of the substrate during transfer and transfer can be prevented.

【0012】また、前記反応室または冷却室に、搬入さ
れた基板搬送用プレートと基板とを分離して支持する基
板支持台を設けることが好ましい。反応室または冷却室
で、基板搬送用プレートと基板とを分離して支持する
と、基板のみを搬出することもできるようになる。さら
に、前記基板搬送用プレートをリング状に形成するとと
もに、前記基板支持台を垂直な胴部と径方向外方に延び
る脚部とを有する断面L字部材で構成し、リング状の基
板搬送用プレートに支持された基板をリング穴から挿通
した前記垂直胴部で支持し、基板搬送用プレートを水平
脚部に引っ掛けて支持するようにすることが好ましい。
基板支持台をL字部材とするだけの簡単な構造で、基板
と基板搬送用プレートとを分離支持することができる。
It is preferable that a substrate support stand is provided in the reaction chamber or the cooling chamber for separating and supporting the loaded substrate transport plate and the substrate. When the substrate transfer plate and the substrate are separated and supported in the reaction chamber or the cooling chamber, only the substrate can be carried out. Further, the substrate transport plate is formed in a ring shape, and the substrate support base is formed of an L-shaped member having a vertical trunk portion and a leg portion extending radially outward. It is preferable that the substrate supported by the plate is supported by the vertical body inserted through the ring hole, and the substrate transport plate is supported by being hooked on the horizontal leg.
The substrate and the substrate transport plate can be separated and supported by a simple structure in which the substrate support is an L-shaped member.

【0013】また、本発明の基板処理装置は、基板が半
導体ウェーハである場合に特に好適に使用される。
[0013] The substrate processing apparatus of the present invention is particularly suitably used when the substrate is a semiconductor wafer.

【0014】[0014]

【発明の実施の形態】以下に本発明の実施の形態を図面
を用いて説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0015】本実施の形態では、ウェーハに亀裂が入る
のを防止するために、搬送部材上に直接ウェーハを載せ
るのではなく、間にウェーハ搬送用プレートを介在さ
せ、ウェーハ搬送用プレートごと処理、搬送するように
している。すなわち成膜前の常温状態のウェーハをウェ
ーハ搬送用プレートに載せ、ウェーハ搬送用プレートご
と搬送、成膜、冷却し、冷却後はウェーハ搬送用プレー
トからウェーハを外してロードロック室に戻すようにし
ている。
In this embodiment, in order to prevent the wafer from being cracked, the wafer is not directly placed on the transfer member, but a wafer transfer plate is interposed therebetween, and the whole wafer transfer plate is processed. It is transported. That is, the wafer in a normal temperature state before film formation is placed on the wafer transfer plate, and the wafer transfer plate is transferred, film-formed, cooled, and after cooling, the wafer is removed from the wafer transfer plate and returned to the load lock chamber. I have.

【0016】図3に示すように、ウェーハ搬送用プレー
ト1は中央に穴2の開いたリング状をしており、内径は
ウェーハ径よりも大きく、外径はウェーハ径よりも小さ
く形成してある。リング状のプレート1の周方向に適宜
間隔を開けて複数のウェーハ支持部3が設けてある。図
示例では120°間隔で3個所点状に設けてある。3箇
所のウェーハ支持部3の配置が正三角形であると、より
バランス良くウェーハを支持することができる。このウ
ェーハ支持部3は、ウェーハ5と線接触ないし点接触さ
せるために他部よりも隆起し、その隆起表面がプレート
1の径方向内方に向かうに従って低くなる傾斜面4で構
成される。ウェーハ搬送用プレート1からの金属汚染を
防止するために、ウェーハ5の外周が当接するウェーハ
支持部3の傾斜面4には、例えば硬質炭素膜であるDL
C(Diamond LikeCarbon)をコーテ
ィングしてある。ウェーハ搬送用プレート1は例えばア
ルミナで構成される。
As shown in FIG. 3, the wafer transfer plate 1 has a ring shape with a hole 2 in the center, and has an inner diameter larger than the wafer diameter and an outer diameter smaller than the wafer diameter. . A plurality of wafer supports 3 are provided at appropriate intervals in the circumferential direction of the ring-shaped plate 1. In the illustrated example, three points are provided at 120 ° intervals. When the arrangement of the three wafer support portions 3 is a regular triangle, the wafer can be supported in a more balanced manner. The wafer supporting portion 3 is constituted by an inclined surface 4 which is raised more than other portions in order to make line contact or point contact with the wafer 5 and whose raised surface becomes lower inward in the radial direction of the plate 1. In order to prevent metal contamination from the wafer transfer plate 1, a hard carbon film DL
C (Diamond LikeCarbon) is coated. The wafer transfer plate 1 is made of, for example, alumina.

【0017】図4は、上述したウェーハ搬送用プレート
1上にウェーハ5を載置した状態を示す。ウェーハ支持
部1を傾斜面4で構成し、ウェーハ5を3点支持させて
いるために、ウェーハ5との接触面積が小さく、パーテ
ィクルの発生を抑えることができる。
FIG. 4 shows a state in which a wafer 5 is placed on the above-described wafer transport plate 1. Since the wafer supporting portion 1 is constituted by the inclined surface 4 and the wafer 5 is supported at three points, the contact area with the wafer 5 is small and the generation of particles can be suppressed.

【0018】このように搬送部材(図示略)上に直接ウ
ェーハ5を載せるのではなく、間にウェーハ搬送用プレ
ート1を介在させ、ウェーハ搬送用プレート1ごと冷却
室または反応室でウェーハ5を処理するようにしてい
る。これによりウェーハ搬送用プレート1がバッファと
なるので、ウェーハ5と搬送部材の温度差の影響や、搬
送時の衝撃等によりウェーハ5に亀裂が入るのを防止で
きる。
In this manner, the wafer 5 is not directly placed on the transfer member (not shown), but the wafer transfer plate 1 is interposed therebetween, and the wafer 5 is processed together with the wafer transfer plate 1 in the cooling chamber or the reaction chamber. I am trying to do it. As a result, the wafer transfer plate 1 serves as a buffer, so that the wafer 5 can be prevented from being cracked due to the influence of the temperature difference between the wafer 5 and the transfer member and the impact during transfer.

【0019】ところで、冷却室または反応室から搬出す
るときは、上述したウェーハ搬送用プレート1を室内に
残してウェーハ5のみを搬出したい場合もある。図1ま
たは2は、そのような場合を想定した基板処理装置を示
す。
When the wafer is unloaded from the cooling chamber or the reaction chamber, it may be desired to leave the above-mentioned wafer transfer plate 1 in the chamber and unload only the wafer 5. FIG. 1 or 2 shows a substrate processing apparatus assuming such a case.

【0020】ウェーハ5の搬送される冷却室または反応
室8には、ウェーハ5を支持するウェーハ支持台7を設
ける。ウェーハ支持台7は、その胴部7aがウェーハ支
持台7の穴2内で、周方向に適宜間隔を開けて複数個配
列され、ウェーハ支持台7の穴2内でウェーハ5を支持
するようになっている。図示例では120°間隔で3個
所点状に設けてある。このようにすると、ウェーハ支持
部3の場合と同様に、よりバランス良くウェーハを支持
することができる。
A wafer support table 7 for supporting the wafer 5 is provided in a cooling chamber or reaction chamber 8 in which the wafer 5 is transferred. The plurality of wafer supports 7 are arranged such that a plurality of body portions 7 a are arranged in the holes 2 of the wafer support 7 at appropriate intervals in the circumferential direction, and support the wafer 5 in the holes 2 of the wafer support 7. Has become. In the illustrated example, three points are provided at 120 ° intervals. In this way, the wafer can be supported in a more balanced manner, as in the case of the wafer support unit 3.

【0021】より詳しくは図2に示すように、ウェーハ
支持台3はL字部材から構成され、ウェーハ支持台3の
穴2内に望むように配置された垂直な胴部7aと、径方
向外方に延びる水平な脚部7bとを備える。胴部7aに
よってウェーハ搬送用プレート1の穴2内でウェーハ5
と接触させ、冷却室または反応室8から浮かしてウェー
ハ5を支持する。ウェーハ支持台7にウェーハ5を預け
られて空になったウェーハ搬送用プレート1は、ウェー
ハ支持台7の脚部7bに引っ掛けられる。このように冷
却室または反応室8にウェーハ5とウェーハ搬送用プレ
ート1とを分離して支持するウェーハ支持台7を設ける
と、ウェーハ5とウェーハ搬送用プレート1との間に搬
送部材6を挿入できる空間ができるので、そこに搬送部
材6を挿入してすくい上げればウェーハ5だけを搬出す
ることができる。また、二点鎖線で示すように、ウェー
ハ搬送用プレート1の下に搬送部材6を挿入してすくい
上げればウェーハ搬送用プレート1およびウェーハ5を
一緒に搬出することもできる。
More specifically, as shown in FIG. 2, the wafer support 3 is formed of an L-shaped member, and has a vertical body 7a disposed as desired in the hole 2 of the wafer support 3, and a radially outer portion. And a horizontal leg 7b extending in the right direction. The wafer 5 is inserted into the hole 2 of the wafer transport plate 1 by the body 7a.
, And floated from the cooling chamber or the reaction chamber 8 to support the wafer 5. The empty wafer transfer plate 1 with the wafer 5 deposited on the wafer support 7 is hooked on the leg 7 b of the wafer support 7. When the wafer support table 7 that supports the wafer 5 and the wafer transfer plate 1 separately in the cooling chamber or the reaction chamber 8 is provided, the transfer member 6 is inserted between the wafer 5 and the wafer transfer plate 1. Since a space is created, if the transport member 6 is inserted into the space and scooped up, only the wafer 5 can be carried out. Further, as shown by a two-dot chain line, if the transfer member 6 is inserted under the wafer transfer plate 1 and scooped up, the wafer transfer plate 1 and the wafer 5 can be carried out together.

【0022】[0022]

【発明の効果】本発明によれば、基板搬送プレートと基
板との接触面積が少ないので、基板へのパーティクル付
着が減少する。また、基板搬送用プレートと基板とを一
緒に処理するので、基板搬送用プレートがバッファにな
り、搬送部材を使って基板を処理室から冷却室に搬送し
ても、搬送部材の温度差の影響や搬送時の衝撃等による
亀裂の発生を防ぐことができ、基板処理の歩留りが向上
する。
According to the present invention, since the contact area between the substrate carrying plate and the substrate is small, the adhesion of particles to the substrate is reduced. In addition, since the substrate transport plate and the substrate are processed together, the substrate transport plate serves as a buffer, and even if the substrate is transported from the processing chamber to the cooling chamber using the transport member, the effect of the temperature difference of the transport member will affect the substrate. And the occurrence of cracks due to impact during transportation and the like can be prevented, and the yield of substrate processing is improved.

【0023】また、反応室または冷却室で基板搬送用プ
レートと基板とを分離して支持した場合には、基板搬送
用プレートを残して基板のみを容易に搬出することがで
きる。
When the substrate transport plate and the substrate are separately supported in the reaction chamber or the cooling chamber, only the substrate can be easily carried out while leaving the substrate transport plate.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本実施の形態による冷却室または反応室内でウ
ェーハ支持台にウェーハおよびウェーハ搬送用プレート
を分離して支持している様子を示す平面図である。
FIG. 1 is a plan view showing a state where a wafer and a wafer transfer plate are separated and supported on a wafer support table in a cooling chamber or a reaction chamber according to the present embodiment.

【図2】本実施の形態によるウェーハ支持台にウェーハ
を載置する説明図であり、(a)はウェーハ載置前の断
面図、(b)はウェーハ載置後の断面図であって、ウェ
ーハ支持台の支持部でウェーハを支持し、脚部にウェー
ハ搬送用プレートを引っ掛かけている様子を示す図であ
る。
FIGS. 2A and 2B are explanatory views of mounting a wafer on a wafer support according to the present embodiment, wherein FIG. 2A is a cross-sectional view before mounting a wafer, and FIG. It is a figure which shows a mode that the wafer is supported by the support part of a wafer support stand, and the wafer conveyance plate is hooked on the leg part.

【図3】本実施の形態によるウェーハ搬送用プレートを
示す説明図であって、(a)は平面図、(B)はb−b
線断面図である。
3A and 3B are explanatory views showing a wafer transfer plate according to the present embodiment, wherein FIG. 3A is a plan view and FIG. 3B is bb
It is a line sectional view.

【図4】本実施の形態によるウェーハ搬送用プレート上
にウェーハを載せた状態の説明図であって、(a)は平
面図、(b)はb−b線断面図である。
4A and 4B are explanatory views of a state where a wafer is placed on a wafer transfer plate according to the present embodiment, wherein FIG. 4A is a plan view and FIG. 4B is a cross-sectional view taken along line bb.

【図5】従来例の基板処理装置を構成する枚葉式半導体
製造装置の平面図である。
FIG. 5 is a plan view of a single-wafer-type semiconductor manufacturing apparatus constituting a conventional substrate processing apparatus.

【図6】従来例の搬送部材によるウェーハ支持の様子を
示す平面図である。
FIG. 6 is a plan view showing a state in which a wafer is supported by a conventional transport member.

【符号の説明】[Explanation of symbols]

1 ウェーハ搬送用プレート 3 ウェーハ支持部 5 ウェーハ 6 搬送部材 7 ウェーハ支持台 8 冷却室または反応室 DESCRIPTION OF SYMBOLS 1 Wafer transfer plate 3 Wafer support part 5 Wafer 6 Transfer member 7 Wafer support 8 Cooling chamber or reaction chamber

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】基板に成膜する反応室と基板を冷却する冷
却室との間を、基板搬送用プレート上に基板を載せた状
態で搬送部材によって搬送し、前記反応室または冷却室
に基板搬送用プレートごと基板を搬入して成膜または冷
却する基板処理装置において、 上記基板搬送用プレートに基板を線接触支持する斜面か
らなる基板支持部を設けたことを特徴とする基板処理装
置。
A substrate is transported by a transport member between a reaction chamber for forming a film on a substrate and a cooling chamber for cooling the substrate, with the substrate placed on a substrate transport plate, and the substrate is transferred to the reaction chamber or the cooling chamber. What is claimed is: 1. A substrate processing apparatus for loading a substrate together with a transport plate and depositing or cooling the substrate, wherein the substrate transport plate is provided with a substrate support portion having a slope for linearly supporting the substrate.
【請求項2】前記反応室または冷却室に、搬入された基
板搬送用プレートと基板とを分離して支持する基板支持
台を設け、この基板支持台を垂直な胴部と径方向外方に
延びる脚部とを有する断面L字部材で構成し、 前記基板搬送用プレートをリング状に形成し、 リング状の基板搬送用プレートに支持された基板をリン
グ穴から挿通した前記垂直胴部で支持し、基板搬送用プ
レートを水平脚部に引っ掛けて支持するようにした請求
項1に記載の基板処理装置。
2. A substrate supporter for separating and supporting a loaded substrate transfer plate and a substrate is provided in the reaction chamber or the cooling chamber, and the substrate supporter is disposed radially outward with respect to a vertical body. An L-shaped cross-section member having an extending leg portion, wherein the substrate transport plate is formed in a ring shape, and the substrate supported by the ring-shaped substrate transport plate is supported by the vertical body portion inserted through a ring hole. The substrate processing apparatus according to claim 1, wherein the substrate transport plate is supported by being hooked on the horizontal leg.
JP25842896A 1996-09-30 1996-09-30 Substrate treating device Pending JPH10107116A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25842896A JPH10107116A (en) 1996-09-30 1996-09-30 Substrate treating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25842896A JPH10107116A (en) 1996-09-30 1996-09-30 Substrate treating device

Publications (1)

Publication Number Publication Date
JPH10107116A true JPH10107116A (en) 1998-04-24

Family

ID=17320084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25842896A Pending JPH10107116A (en) 1996-09-30 1996-09-30 Substrate treating device

Country Status (1)

Country Link
JP (1) JPH10107116A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280370A (en) * 2001-03-15 2002-09-27 Tokyo Electron Ltd Unit and method of cooling object to be treated, and system and method for heat treatment
JP2009105116A (en) * 2007-10-22 2009-05-14 Shin Etsu Polymer Co Ltd Wafer storage container and handling method for wafer
JP2009253257A (en) * 2008-04-11 2009-10-29 Sumitomo Heavy Ind Ltd Support mechanism for object to be coated

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280370A (en) * 2001-03-15 2002-09-27 Tokyo Electron Ltd Unit and method of cooling object to be treated, and system and method for heat treatment
JP2009105116A (en) * 2007-10-22 2009-05-14 Shin Etsu Polymer Co Ltd Wafer storage container and handling method for wafer
JP2009253257A (en) * 2008-04-11 2009-10-29 Sumitomo Heavy Ind Ltd Support mechanism for object to be coated

Similar Documents

Publication Publication Date Title
JP3234617B2 (en) Substrate support for heat treatment equipment
US6026589A (en) Wafer carrier and semiconductor apparatus for processing a semiconductor substrate
US7611322B2 (en) Processing thin wafers
US20070122128A1 (en) Method and system for loading substrate supports into a substrate holder
JPH1098091A (en) Semiconductor wafer carrier
TWI692052B (en) Substrate processing device and method
JPH10107116A (en) Substrate treating device
JP3157738B2 (en) Wafer transfer device and transfer method
JPS6317521A (en) Carrying method of wafer boat
JPH07211658A (en) Wafer carrier
KR100968725B1 (en) Blade for transferring substrate and apparatus for transferring substrate
JP2639424B2 (en) Transport method
JP2630366B2 (en) Loading / unloading method and loading / unloading device for plate-like body
JPH10107117A (en) Substrate treating device
JP2961480B2 (en) Fork for transferring semiconductor wafers
JPH0995783A (en) Sputtering device
JP2007281030A (en) Method of holding silicon wafer
JP2006032427A (en) Substrate processing apparatus and cleaning method of electrostatic chuck
JPH0529431A (en) Transferring arm for substrate
JPH0395952A (en) Device for manufacturing semiconductor device
JP2004031449A (en) Conveying tray and substrate processing device
JPH0758035A (en) Heat treatment jig for semiconductor wafer
JPH01194317A (en) Holding jig of semiconductor wafer
JPH10114425A (en) Boat
JP4298331B2 (en) Foreign matter removing wafer and susceptor cleaning method