JPH10104596A - Production of liquid crystal display device - Google Patents

Production of liquid crystal display device

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Publication number
JPH10104596A
JPH10104596A JP8259639A JP25963996A JPH10104596A JP H10104596 A JPH10104596 A JP H10104596A JP 8259639 A JP8259639 A JP 8259639A JP 25963996 A JP25963996 A JP 25963996A JP H10104596 A JPH10104596 A JP H10104596A
Authority
JP
Japan
Prior art keywords
light
liquid crystal
film
display device
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8259639A
Other languages
Japanese (ja)
Inventor
Naoya Sotani
直哉 曽谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP8259639A priority Critical patent/JPH10104596A/en
Publication of JPH10104596A publication Critical patent/JPH10104596A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To prevent the decrease of an aperture ratio by the misalignment between the light shielding film and TFT electrodes of the liquid crystal display device, the light escape by the faults of the TFTs, the peripheral parts of the TFT electrodes of the spacers for spacing control dispersed in liquid crystals and the increase in the working time for the purpose of correcting the liquid escape in an active matrix type liquid crystal display device. SOLUTION: A photographic emulsion contg. photosensitive silver halide is applied via a protective film 10 made of a UV curing acrylic resin copolymer on the outside surface of the liquid crystal display device and is used as a photosensitive film 11. The photosensitive films of the parts of the bright display where light is transmitted are exposed with respect to the regions 6 of the abnormally bright display and the regions of the TFTs among the pixels of the liquid crystal display device set at the black display, by which the silver is precipitated and the photosensitive films are converted to the light shielding films 9 of low light transmittance. The liquid passing the TFTs allowing the easy flow of light currents and the pixels of the bright display which induces the degradation in contrast is thus shut off, by which the rapid production of the bright and distinct liquid crystal display device by self-alignment is made possible.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶表示装置の遮
光膜に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light shielding film for a liquid crystal display.

【0002】[0002]

【従来の技術】図10は液晶表示装置の一対の基板の内
側に遮光膜の有る従来の液晶表示装置の断面図である。
図10に示すように、TFT基板1と対向基板2との間
に上の界面から下の界面までに至る区間で90度だけ長
軸が回転するTN型の液晶3が封入されている。
2. Description of the Related Art FIG. 10 is a sectional view of a conventional liquid crystal display device having a light shielding film inside a pair of substrates of the liquid crystal display device.
As shown in FIG. 10, between the TFT substrate 1 and the counter substrate 2, a TN type liquid crystal 3 whose major axis rotates by 90 degrees in a section from the upper interface to the lower interface is sealed.

【0003】一方、TFT基板1の外面に、断面と平行
な方向に偏光軸のあるTFT偏光板4が配置され、他
方、TFT偏光板4と偏光軸が直交し、断面と垂直な方
向に偏光軸のある対向偏光板5が対向基板2の外面に配
置されている。偏光軸が互いに直交する偏光板をTN型
の液晶の両側に配置すると、TFT基板上の透明なTF
T電極6と対向基板上の透明な対向電極7との間に電界
が無い場合、液晶表示装置は光を透過させる。
On the other hand, a TFT polarizing plate 4 having a polarization axis in a direction parallel to the cross section is arranged on the outer surface of the TFT substrate 1, and the polarizing axis is orthogonal to the TFT polarizing plate 4 and polarized in a direction perpendicular to the cross section. A counter polarizer 5 having an axis is arranged on the outer surface of the counter substrate 2. When polarizing plates whose polarization axes are orthogonal to each other are arranged on both sides of the TN type liquid crystal, the transparent TF on the TFT substrate becomes transparent.
When there is no electric field between the T electrode 6 and the transparent counter electrode 7 on the counter substrate, the liquid crystal display device transmits light.

【0004】また、TFT電極6と対向電極7との間に
電界が有る場合、液晶表示装置は偏光板の位置におい
て、光を遮断する。このようなモードの液晶表示装置
は、ノーマリーホワイト(電界を印加しない通常の場合
に明るい表示になる)モードの液晶表示装置と呼ばれて
いる。逆に、偏光軸が互いに平行な偏光板をTN型の液
晶の両側に配置する場合、ノーマリーブラック(電界を
印加しない通常の場合に暗い表示になる)モードの液晶
表示装置と呼ばれている。
When an electric field is present between the TFT electrode 6 and the counter electrode 7, the liquid crystal display blocks light at the position of the polarizing plate. The liquid crystal display device of such a mode is called a normally white (a bright display in a normal case where no electric field is applied) mode liquid crystal display device. Conversely, when polarizing plates whose polarization axes are parallel to each other are arranged on both sides of the TN type liquid crystal, it is called a normally black (dark display in a normal case where no electric field is applied) mode liquid crystal display device. .

【0005】液晶を挟持する一対の配向膜8は、先に述
べたモードに従って、液晶3の界面の方向を決定してい
る。ここで、液晶表示装置は、TFT電極6の部分だけ
に光を通過させるため、対向基板2上にTFT電極の周
囲を囲む格子状の遮光膜9を設けている。遮光膜9とT
FT電極6とは、別の基板に設けられているので2枚の
基板を貼り合わせるときに、位置合わせをしている。
A pair of alignment films 8 sandwiching the liquid crystal determine the direction of the interface of the liquid crystal 3 in accordance with the mode described above. Here, in the liquid crystal display device, a lattice-shaped light shielding film 9 surrounding the periphery of the TFT electrode is provided on the counter substrate 2 in order to allow light to pass only through the TFT electrode 6. Light shielding film 9 and T
Since the FT electrode 6 and the FT electrode 6 are provided on different substrates, they are aligned when two substrates are bonded to each other.

【0006】図11は別な従来例における液晶表示装置
の断面図である。図11に示すように、遮光膜9は、T
FT基板1の内側面でかつTFTの上方に設けられてい
る。図12は他の従来例における液晶表示装置の断面図
である。図12に図示するように、遮光膜9は、TFT
基板1の外面でかつTFT偏光板4の内面に形成されて
いる(特開平3−148637号公報)。
FIG. 11 is a sectional view of another conventional liquid crystal display device. As shown in FIG.
It is provided on the inner side surface of the FT substrate 1 and above the TFT. FIG. 12 is a cross-sectional view of another conventional liquid crystal display device. As shown in FIG. 12, the light shielding film 9 is a TFT
It is formed on the outer surface of the substrate 1 and on the inner surface of the TFT polarizing plate 4 (JP-A-3-148637).

【0007】また、図10、図11及び図12に示され
るように、TFT電極6と遮光膜9とは、TFT電極の
両端で互いに重なるように設計されている。このように
液晶表示装置は、通常その表示品位を向上させるため、
Cr等の金属や染料等の有機材料を用いてTFT基板ま
たは対向基板上に遮光膜を作成している。
As shown in FIGS. 10, 11 and 12, the TFT electrode 6 and the light-shielding film 9 are designed to overlap each other at both ends of the TFT electrode. As described above, the liquid crystal display device usually improves its display quality.
A light-shielding film is formed on a TFT substrate or a counter substrate using an organic material such as a metal such as Cr or a dye.

【0008】[0008]

【発明が解決しようとする課題】ところが、図10の対
向基板上に遮光膜を設ける液晶表示装置は、位置合わせ
の際にTFT基板と対向基板とがほぼずれることが確実
なので、あらかじめTFT電極と遮光膜との重なりが大
きくなるように設定して、位置合わせマージンを大きく
するため、液晶表示装置の開口率を小さくなる惧れがあ
る。
However, in the liquid crystal display device in which a light-shielding film is provided on the opposing substrate shown in FIG. 10, since the TFT substrate and the opposing substrate are almost displaced at the time of alignment, it is necessary to use a TFT electrode and a TFT electrode in advance. Since the overlap with the light-shielding film is set to be large to increase the alignment margin, the aperture ratio of the liquid crystal display device may be reduced.

【0009】また、一対の基板を互いに貼りつけた後に
TFTが故障した場合、顕微鏡下で個々に遮光膜で好ま
しくない画素を塗りつぶした後、良好な画素までに及ん
だ遮光膜の過剰な部分を削り取るという時間の掛かる作
業が必要であった。そして、図11のTFT上に遮光膜
を設ける液晶表示装置は、開口率が高くなるが、TFT
のソースとドレインへのコンタクトが同時に形成でき
ず、対向基板上の製造工程に比べてより難しいTFT基
板上の製造工程がさらに複雑化して、歩留りが低下する
ことがあった。
If the TFT breaks down after a pair of substrates are attached to each other, an undesired pixel is individually filled with a light-shielding film under a microscope, and then an excess portion of the light-shielding film reaching a good pixel is obtained. Time-consuming work of shaving off the steel. The liquid crystal display device in which a light-shielding film is provided on the TFT shown in FIG. 11 has a high aperture ratio.
In this case, the contact to the source and the drain cannot be formed at the same time, and the manufacturing process on the TFT substrate, which is more difficult than the manufacturing process on the counter substrate, is further complicated, and the yield may be reduced.

【0010】また、図12のTFT基板上に遮光膜を設
ける液晶表示装置は、TFT基板と遮光膜との位置合わ
せが必要となり開口率が減少して、先の従来例と同様な
問題が生じる。本発明は、前述した事情に鑑みてなされ
てものであり、液晶表示装置のスループットを向上させ
ると共に開口率を上げることをその目的とする。
Further, in the liquid crystal display device in which a light-shielding film is provided on the TFT substrate shown in FIG. 12, the alignment between the TFT substrate and the light-shielding film is required, the aperture ratio is reduced, and the same problem as in the prior art is caused. . The present invention has been made in view of the above circumstances, and has as its object to improve the throughput of a liquid crystal display device and increase the aperture ratio.

【0011】[0011]

【課題を解決するための手段】本発明の液晶表示装置の
製造方法は、一対の基板間に液晶を挟持し、一方の基板
に設けた画素群を暗い表示形態と明るい表示形態との少
なくとも二つの表示形態の間で駆動する液晶表示装置の
製造方法において、液晶表示装置の全ての画素を暗い表
示形態に設定した状態において、液晶表示装置の光抜け
する領域に対応する少なくとも一方の基板の外側面に遮
光膜を形成することを特徴とする。
According to a method of manufacturing a liquid crystal display device of the present invention, a liquid crystal is sandwiched between a pair of substrates, and a group of pixels provided on one of the substrates is formed by at least two of a dark display mode and a bright display mode. In a method of manufacturing a liquid crystal display device driven between two display modes, in a state in which all pixels of the liquid crystal display device are set to a dark display mode, at least one of the substrates corresponding to a light-exiting region of the liquid crystal display device is disposed. A light-shielding film is formed on the side surface.

【0012】また、本発明の液晶表示装置の製造方法
は、前記光抜けする領域が、画素駆動用トランジスタ部
または配線の欠陥によって設定状態にかかわらず明るい
表示形態となった画素や、前記トランジスタ部自身や、
基板に平行な電界により光漏れする画素の周辺や、一対
の基板間の間隔制御するスペーサの周囲で液晶の配向が
乱れることから特定の液晶の厚さの場合に発生し、スペ
ーサの直径の数倍の大きさに達する輝点などの領域であ
ることを特徴とする。
Further, in the method of manufacturing a liquid crystal display device according to the present invention, there is provided a method of manufacturing a liquid crystal display device, comprising: Myself,
Occurs when the liquid crystal orientation is disturbed around the pixel where light leaks due to an electric field parallel to the substrate, or around the spacer that controls the distance between the pair of substrates. It is an area such as a bright spot that reaches twice the size.

【0013】さらに、本発明の液晶表示装置の製造方法
は、前記遮光膜を、露光により光透過率が下がる感光膜
を形成した後、前記光抜けする領域から露出する光によ
って前記感光膜を露光することにより形成したことを特
徴とする。あるいは、本発明の液晶表示装置の製造方法
は、前記遮光膜を、露光により分解するポジレジスト型
の感光膜を形成した後、前記光抜けする領域から露出す
る光によって前記感光膜を露光後現像して、前記暗い表
示形態の画素の領域に感光膜を残存させ、続いて不透明
な堆積膜を全面に堆積し、感光膜を剥離することによっ
て形成したことを特徴とする。
Further, in the method for manufacturing a liquid crystal display device according to the present invention, the light-shielding film is formed by forming a photosensitive film whose light transmittance is reduced by exposure, and then exposing the photosensitive film by light exposed from the light-exiting region. It is characterized by being formed by performing. Alternatively, in the method of manufacturing a liquid crystal display device according to the present invention, the light-shielding film is formed by forming a positive resist type photosensitive film which is decomposed by exposure, and thereafter, the photosensitive film is developed by light exposed from the light-exiting region. Then, a photosensitive film is left in a region of the pixel in the dark display mode, an opaque deposition film is deposited on the entire surface, and the photosensitive film is peeled off.

【0014】加えて、本発明の液晶表示装置の製造方法
は、前記遮光膜を、最初に還元により光透過率が下がる
透明膜を形成し、次に透明膜の外面に露光により分解す
るポジレジスト型の感光膜を形成した後、該感光膜を前
記光抜けする領域から露出する光によって露光後現像
し、前記暗い表示形態の画素の領域の透明膜上に感光膜
を残存させ、続いて感光膜に覆われていない光抜けする
領域の透明膜を還元することにより形成したことを特徴
とする。
In addition, in the method for manufacturing a liquid crystal display device according to the present invention, the light-shielding film is preferably formed by first forming a transparent film whose light transmittance is reduced by reduction, and then decomposing the outer surface of the transparent film by exposure. After forming a photosensitive film of the mold, the photosensitive film is exposed and developed by light exposed from the light-exiting region, and developed to leave the photosensitive film on the transparent film in the region of the pixel in the dark display mode. It is characterized in that it is formed by reducing a transparent film in a region through which light is not covered by a film.

【0015】本発明の液晶表示装置の製造方法は、光学
部品として表示上の欠陥をそのまま感光膜の露光に用い
る。すなわち、液晶表示装置の片側に感光膜を塗布し、
液晶表示装置に黒表示をさせた後、感光膜と逆の液晶表
示装置の側から光を当て光抜け部分の感光膜を感光させ
ることにより遮光膜を形成して、格子状のBM(ブラッ
クマトリクス)の作成及びドット修正を行う。
In the method of manufacturing a liquid crystal display device according to the present invention, a defect on a display as an optical component is directly used for exposing a photosensitive film. That is, a photosensitive film is applied to one side of the liquid crystal display device,
After the liquid crystal display device performs black display, a light-shielding film is formed by applying light from the side of the liquid crystal display device opposite to the photosensitive film and exposing the light-exposed portion of the photosensitive film to form a grid-like BM (black matrix). ) And dot correction.

【0016】従来、やや広めな面積に遮光膜であるBM
を作成し、光抜けを無くしていたが、感光膜を用いるこ
とで実際に光抜けを起こしている部分のみを確実に遮光
できるため、開口率が大きくなる。また、ドット欠陥の
部分も光抜けと同時に遮光されるのでスループットが向
上する。
Conventionally, a light shielding film BM having a slightly larger area is used.
Was formed to eliminate light leakage. However, by using a photosensitive film, only the portion where light leakage actually occurred can be reliably blocked, and the aperture ratio increases. Further, the dot defect portion is shielded simultaneously with the light leakage, so that the throughput is improved.

【0017】以上のような構成によれば、従来に比べて
明るい液晶表示装置がより早く生産される。
According to the above configuration, a liquid crystal display device which is brighter than the conventional one can be produced more quickly.

【0018】[0018]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

(第1実施形態)本発明の第1実施形態を図1及び図2
に基づいて説明する。図1は第1実施形態における液晶
表示装置の断面図である。但し、従来例と同様の構成部
材には同符号を用い、その詳細な説明を省略する。
(First Embodiment) FIGS. 1 and 2 show a first embodiment of the present invention.
It will be described based on. FIG. 1 is a sectional view of the liquid crystal display device according to the first embodiment. However, the same reference numerals are used for the same components as those in the conventional example, and the detailed description is omitted.

【0019】図1に示すように、TFT基板1と対向基
板2との間にTN型の液晶3が封入されている。偏光軸
が互いに直交するTFT偏光板4と対向偏光板5からな
る一対の偏光板をTN型の液晶の両側に配置すること
で、TFT基板上の透明なTFT電極6L、6Rと対向
基板上の透明な対向電極7との間に電界が無い場合、液
晶表示装置は光を透過させる。
As shown in FIG. 1, a TN type liquid crystal 3 is sealed between a TFT substrate 1 and a counter substrate 2. By disposing a pair of polarizing plates composed of a TFT polarizing plate 4 and a counter polarizing plate 5 whose polarizing axes are orthogonal to each other on both sides of the TN type liquid crystal, the transparent TFT electrodes 6L, 6R on the TFT substrate and the counter substrate When there is no electric field between the liquid crystal display device and the transparent counter electrode 7, the liquid crystal display device transmits light.

【0020】また、TFT電極6と対向電極7との間に
電界が有る場合、液晶表示装置は偏光板の位置におい
て、光を遮断する。図1において、6Lは正常なTFT
に接続されたTFT電極、6Rは異常なTFTに接続さ
れたTFT電極である。ここで、TFTは周知の通り、
画素駆動用トランジスタの一種である。
When there is an electric field between the TFT electrode 6 and the counter electrode 7, the liquid crystal display blocks light at the position of the polarizing plate. In FIG. 1, 6L is a normal TFT.
Is connected to the abnormal TFT, and 6R is a TFT electrode connected to the abnormal TFT. Here, TFT is well known,
This is a kind of pixel driving transistor.

【0021】また、図1に特徴的に図示するように、T
FT偏光板4の表面にTFT偏光板を保護する保護膜1
0が設けられている。この保護膜10は、シリコンアク
リレートまたはエポキシアクリレートを主成分とする紫
外線硬化樹脂を表面が三酢酸セルロース製のTFT偏光
板4上に塗布後、80Wの高圧水銀灯の光源から1cm
だけ離して1000mjcm-2のエネルギー密度で5秒
間から15秒間までの照射時間で光硬化させて形成した
ものである。
As is characteristically shown in FIG. 1, T
Protective film 1 for protecting TFT polarizing plate on the surface of FT polarizing plate 4
0 is provided. This protective film 10 is coated with an ultraviolet-curable resin containing silicon acrylate or epoxy acrylate as a main component on a TFT polarizing plate 4 whose surface is made of cellulose triacetate, and then 1 cm from a light source of a high-pressure mercury lamp of 80 W.
It is formed by photo-curing at an energy density of 1000 mjcm -2 for an irradiation time of 5 seconds to 15 seconds.

【0022】さらに保護膜10上にTFT電極6Lの位
置に露光されていない厚さ2〜40μmの有機樹脂を主
成分とする感光膜11が形成されている。この感光膜1
1は、感光性ハロゲン化銀等の写真乳剤を硬化した保護
膜10上に感光しないようにイエロールーム中で塗布し
た後、イエロールーム内で信号入力回路を接続し、暗い
表示形態に設定した後、対向基板2から波長0.3〜
0.1μmの平行紫外線により露光した上、現像定着を
行って、自然光下で変色しにくくしたものである。
Further, on the protective film 10, a photosensitive film 11 mainly composed of an organic resin and having a thickness of 2 to 40 μm, which is not exposed, is formed at the position of the TFT electrode 6L. This photosensitive film 1
1 is a method in which a photographic emulsion such as photosensitive silver halide is coated on a cured protective film 10 in a yellow room so as not to be exposed to light, and a signal input circuit is connected in the yellow room to set a dark display mode. , The wavelength of 0.3 to
After exposure with 0.1 μm parallel ultraviolet rays, development and fixing were performed to make the color hardly changed under natural light.

【0023】同じく保護膜10上に異常なTFTに接続
されたTFT電極6Rの位置及び各TFTの位置に、感
光により感光膜から変換された、光透過率の低い厚さ2
μmの遮光膜9が作製されている。また、遮光膜9は、
イエロールームで保護膜10上に塗布した感光膜を液晶
表示装置により選択的に露光して、ドット欠陥や薄膜等
の平行紫外線を透過する液晶表示装置の部分で銀を析出
させて、光透過率を下げたものである。
Similarly, on the protective film 10, the position of the TFT electrode 6R connected to the abnormal TFT and the position of each TFT are replaced by the thickness 2 having a low light transmittance converted from the photosensitive film by exposure.
A light-shielding film 9 of μm is manufactured. Further, the light shielding film 9
The photosensitive film coated on the protective film 10 in the yellow room is selectively exposed by a liquid crystal display device, and silver is deposited at a portion of the liquid crystal display device that transmits parallel ultraviolet rays, such as dot defects and thin films, to obtain a light transmittance. Is lowered.

【0024】図1から分かるように、遮光膜9は、液晶
表示装置の外側面の設けられると共に、正常なTFTに
接続されたTFT電極6Lとの重なりが従来より小さく
なる。従って、本実施形態によれば、従来に比べて液晶
表示装置の開口率が向上する。
As can be seen from FIG. 1, the light-shielding film 9 is provided on the outer surface of the liquid crystal display device, and the overlap with the TFT electrode 6L connected to the normal TFT is smaller than in the conventional case. Therefore, according to the present embodiment, the aperture ratio of the liquid crystal display device is improved as compared with the related art.

【0025】図2は露光により光透過率が下がる感光膜
を形成する液晶表示装置の製造方法の断面工程図であ
る。図2aに示すように、液晶表示装置の対向基板2側
から波長0.3〜0.1μmの平行紫外線12を保護膜
10と感光膜11とを設けたTFT基板1側へ照射す
る。
FIG. 2 is a sectional process view of a method of manufacturing a liquid crystal display device in which a photosensitive film whose light transmittance is lowered by exposure is formed. As shown in FIG. 2A, parallel ultraviolet rays 12 having a wavelength of 0.3 to 0.1 μm are irradiated from the side of the counter substrate 2 of the liquid crystal display device to the side of the TFT substrate 1 on which the protective film 10 and the photosensitive film 11 are provided.

【0026】図2aで正常なTFTに接続されたTFT
電極6Lには暗い表示形態の信号が伝えられているの
で、感光膜11の露光に用いられる平行紫外線12はT
FT偏光板4で遮光される。一方、図2bで異常なTF
Tに接続されたTFT電極6RにはTFTの異常のた
め、暗い表示形態の信号が伝えられず、平行紫外線12
はTFT偏光板4を透過して感光膜を変色させる。
In FIG. 2a, a TFT connected to a normal TFT
Since a dark display signal is transmitted to the electrode 6L, the parallel ultraviolet light 12 used for exposing the photosensitive film 11 is T
The light is shielded by the FT polarizing plate 4. On the other hand, in FIG.
A dark display signal is not transmitted to the TFT electrode 6R connected to T due to an abnormality of the TFT.
Is transmitted through the TFT polarizing plate 4 to change the color of the photosensitive film.

【0027】さらに、TFTを構成する、厚さ数100
0Å程度のSi膜は赤く着色し、可視部の光を幾らか吸
収するが、波長0.3〜0.1μmの紫外線は透過する
ので平行紫外線によりTFT部分の感光膜は変色する。
このように、光を透過する薄いTFTや平行電界による
TFT電極の周囲やスペーサに起因する輝点も遮光膜に
よって見えなくなる。
Further, a TFT having a thickness of 100
The Si film of about 0 ° is colored red and absorbs some light in the visible region, but transmits ultraviolet light having a wavelength of 0.3 to 0.1 μm, so that the photosensitive film in the TFT portion is discolored by the parallel ultraviolet light.
As described above, the light-transmitting thin TFT and the bright spot caused by the spacer and the periphery of the TFT electrode due to the parallel electric field are also invisible by the light shielding film.

【0028】従って、図2bに示すように、正常なTF
Tに接続されたTFT電極6Lの部分だけに光透過率の
高い感光膜11が自己整合で形成され、TFTや光抜け
またはドット欠陥の部分に自動的に光透過率の低い遮光
膜9が作製される。第1実施形態によれば、映像が鮮明
になるだけでなく、液晶表示装置の外側面を比較的厚い
層で覆うことになるので、液晶表示装置の耐衝撃性が高
まる。
Therefore, as shown in FIG.
A photosensitive film 11 having a high light transmittance is formed in a self-aligned manner only on a portion of the TFT electrode 6L connected to the T, and a light-shielding film 9 having a low light transmittance is automatically formed on a portion of the TFT, light leakage or dot defect. Is done. According to the first embodiment, not only the image becomes clearer, but also the outer surface of the liquid crystal display device is covered with a relatively thick layer, so that the shock resistance of the liquid crystal display device is improved.

【0029】(第2実施形態)本発明の第2実施形態を
図3及び図4に基づいて説明する。図3は露光により分
解するポジレジスト型の感光膜で遮光膜をリフトオフに
よって形成した液晶表示装置の断面図である。図3に特
徴的に図示するように、TFT偏光板4の表面にTFT
偏光板を保護する保護膜10が設けられている。
(Second Embodiment) A second embodiment of the present invention will be described with reference to FIGS. FIG. 3 is a sectional view of a liquid crystal display device in which a light-shielding film is formed by lift-off using a positive resist type photosensitive film that is decomposed by exposure. As is characteristically shown in FIG. 3, the TFT polarizing plate 4 has a TFT
A protective film 10 for protecting the polarizing plate is provided.

【0030】この保護膜10は、シリコンアクリレート
またはエポキシアクリレートを主成分とする紫外線硬化
樹脂から構成されている。さらに保護膜10上に異常な
TFTに接続されたTFT電極6Rの位置及び各TFT
の位置に厚さ1500ÅのCr製の遮光膜9が作製され
ている。逆に正常なTFTに接続されたTFT電極6L
の位置の保護膜10上には何も形成されていない。
The protective film 10 is made of an ultraviolet curable resin containing silicon acrylate or epoxy acrylate as a main component. Further, the position of the TFT electrode 6R connected to the abnormal TFT on the protective film 10 and each TFT
A light-shielding film 9 made of Cr and having a thickness of 1500 ° is formed at the position of. Conversely, a TFT electrode 6L connected to a normal TFT
Nothing is formed on the protective film 10 at the position of.

【0031】この遮光膜9は、減圧されたアルゴン雰囲
気中でスパッタリングにより、保護膜10上に形成され
る。図4はポジレジスト型の感光膜をリフトオフして遮
光膜9を形成する液晶表示装置の製造方法の断面工程図
である。図4aに示すように、液晶表示装置の外面の保
護膜10上に露光により分解するポジレジスト型の感光
膜を形成した後、明るい表示形態の画素の領域から露出
する光によって液晶表示装置の外面の感光膜を露光後現
像して、正常な暗い表示の画素の領域に感光膜11を残
存させる。
The light-shielding film 9 is formed on the protective film 10 by sputtering in a reduced-pressure argon atmosphere. FIG. 4 is a sectional process view of a method for manufacturing a liquid crystal display device in which a light-shielding film 9 is formed by lifting off a positive resist type photosensitive film. As shown in FIG. 4A, after forming a positive resist type photosensitive film which is decomposed by exposure on a protective film 10 on the outer surface of the liquid crystal display device, light exposed from a pixel region of a bright display form is used to expose the outer surface of the liquid crystal display device. After the exposure, the photosensitive film 11 is developed to leave the photosensitive film 11 in a region of a pixel having a normal dark display.

【0032】続いて、不透明なCr製の堆積膜13を液
晶表示装置の全面に堆積すると、光抜けするTFT及び
TFT電極の領域は、液晶表示装置の外面に設けられた
保護膜10が不透明な堆積膜13により覆われた形状と
なる。そして、正常な暗い表示形態のTFT電極の領域
は、液晶表示装置の外面に設けられた保護膜10上に厚
さ2μmの感光膜11と厚さ1500Åの堆積膜13と
が積層した形態となる。
Subsequently, when an opaque Cr deposition film 13 is deposited on the entire surface of the liquid crystal display device, the area of the TFTs and the TFT electrodes from which light leaks is covered by the opaque protective film 10 provided on the outer surface of the liquid crystal display device. The shape is covered by the deposition film 13. Then, the region of the TFT electrode in a normal dark display form has a form in which a photosensitive film 11 having a thickness of 2 μm and a deposited film 13 having a thickness of 1500 ° are laminated on a protective film 10 provided on the outer surface of the liquid crystal display device. .

【0033】図4aの構成に対して剥離液を作用させる
と、感光膜11が溶解して、感光膜上の堆積膜はリフト
オフされる。すると、図4bに示すように、液晶表示装
置の外側面の内、明るい表示形態の画素の領域だけに不
透明な堆積膜が残るため、遮光膜9が光抜けした部分に
作製される。
When a stripper is applied to the structure shown in FIG. 4A, the photosensitive film 11 is dissolved, and the deposited film on the photosensitive film is lifted off. Then, as shown in FIG. 4B, since the opaque deposited film remains only in the bright display mode pixel region on the outer surface of the liquid crystal display device, the light-shielding film 9 is formed in the portion where light is leaked.

【0034】尚、堆積膜13は、Crだけに留まらず、
Al、Ti、Ni、W、Moなどの不透明で導電性の有
る金属膜であれば良い。あるいは、堆積膜13は、カー
ボンや導電性高分子の一種であるポリピロールなどの抵
抗の低い膜であっても良い。第2実施形態によれば、映
像が鮮明になるだけでなく、液晶表示装置の外面を格子
状の低い抵抗の層で覆うことになるので、液晶表示装置
の耐静電気性が高まる。
The deposited film 13 is not limited to Cr only.
Any opaque and conductive metal film such as Al, Ti, Ni, W, and Mo may be used. Alternatively, the deposited film 13 may be a low-resistance film such as carbon or polypyrrole, which is a kind of conductive polymer. According to the second embodiment, not only the image becomes clear, but also the outer surface of the liquid crystal display device is covered with a lattice-like low-resistance layer, so that the electrostatic resistance of the liquid crystal display device is improved.

【0035】(第3実施形態)本発明の第3実施形態を
図5及び図6に基づいて説明する。図5は露光により分
解するポジレジスト型の感光膜で部分的に被覆し、還元
により光透過率が下がる透明膜を感光膜の有無によって
選択的に還元して遮光膜を形成した液晶表示装置の断面
図である。
(Third Embodiment) A third embodiment of the present invention will be described with reference to FIGS. FIG. 5 shows a liquid crystal display device in which a light-shielding film is formed by partially coating a positive resist type photosensitive film which is decomposed by exposure, and selectively reducing a transparent film whose light transmittance is reduced by reduction depending on the presence or absence of the photosensitive film. It is sectional drawing.

【0036】図5に特徴的に図示するように、TFT偏
光板4の表面にTFT偏光板を保護する保護膜10が設
けられている。この保護膜10は、アクリル樹脂と他の
樹脂との共重合体に光硬化剤を添加した紫外線硬化樹脂
により作製される。さらに保護膜10上に異常なTFT
に接続されたTFT電極6Rの位置及び各TFTの位置
に、厚さ500Åの光透過率が10%程度の、還元され
たITO製の遮光膜9が作製されている。
As shown in FIG. 5, a protective film 10 is provided on the surface of the TFT polarizing plate 4 to protect the TFT polarizing plate. This protective film 10 is made of an ultraviolet curable resin obtained by adding a photocuring agent to a copolymer of an acrylic resin and another resin. Furthermore, an abnormal TFT is formed on the protective film 10.
A light-shielding film 9 made of reduced ITO and having a light transmittance of about 10% with a thickness of 500 mm is formed at the position of the TFT electrode 6R connected to the TFT and at the position of each TFT.

【0037】また、正常なTFTに接続されたTFT電
極6Lの位置の保護膜上に、厚さ500Åの光透過率が
90%程度の、ITO製の透明膜14が形成されてい
る。この透明膜14は、減圧下のスパッタリングにより
透明な面抵抗100Ω/□のITO膜を保護膜10上に
常温で堆積させたものである。遮光膜9は、光抜けして
ポジレジスト型の感光膜に覆われていない透明膜14
を、減圧下のプラズマ処理によりITO製の透明膜から
酸素を除き、透明状態から白濁状態に変えて形成され
る。
On the protective film at the position of the TFT electrode 6L connected to the normal TFT, a transparent film 14 made of ITO and having a thickness of 500 ° and a light transmittance of about 90% is formed. The transparent film 14 is formed by depositing a transparent ITO film having a sheet resistance of 100Ω / □ on the protective film 10 at normal temperature by sputtering under reduced pressure. The light-shielding film 9 is a transparent film 14 which is not covered with the positive resist type photosensitive film due to light leakage.
Is formed by removing oxygen from a transparent film made of ITO by plasma treatment under reduced pressure and changing the transparent state to a cloudy state.

【0038】図6はポジレジスト型の感光膜に覆われて
いない明るい表示形態の画素の領域の透明膜を還元して
遮光膜を形成する液晶表示装置の製造方法の断面工程図
である。図6aに示すように、最初に液晶表示装置の外
面に還元により光透過率が下がる透明膜14を形成す
る。
FIG. 6 is a sectional process view of a method of manufacturing a liquid crystal display device in which a transparent film in a pixel region of a bright display form not covered with a positive resist type photosensitive film is reduced to form a light shielding film. As shown in FIG. 6A, first, a transparent film 14 whose light transmittance is reduced by reduction is formed on the outer surface of the liquid crystal display device.

【0039】次に、透明膜14の外面に露光により分解
するポジレジスト型の感光膜を形成した後、明るい表示
形態の画素の領域から露出する光によって液晶表示装置
の外面の感光膜を露光後現像して、正常な暗い表示形態
の画素の領域に感光膜11を残存させる。続いて、感光
膜11に覆われていない明るい表示形態の画素の領域の
透明膜14をプラズマ15により還元する。
Next, after forming a positive resist type photosensitive film which is decomposed by exposure on the outer surface of the transparent film 14, the photosensitive film on the outer surface of the liquid crystal display device is exposed by light exposed from a pixel region of a bright display form. By developing, the photosensitive film 11 is left in a region of a pixel having a normal dark display mode. Subsequently, the transparent film 14 in the region of the pixel in the bright display mode which is not covered with the photosensitive film 11 is reduced by the plasma 15.

【0040】さらに、感光膜11を剥離液により除去し
て、感光膜下の透明膜を表面に露出させる。そうする
と、図6bに示すように、暗い表示形態の正常なTFT
に接続されたTFT電極6Lの領域の保護膜10上に光
透過率の高い透明膜14が作製される。
Further, the photosensitive film 11 is removed by a stripping solution to expose a transparent film under the photosensitive film on the surface. As a result, as shown in FIG.
Is formed on the protective film 10 in the region of the TFT electrode 6L connected to the transparent film 14 having a high light transmittance.

【0041】また、TFTや明るい表示形態の異常なT
FTに接続されたTFT電極6Rの領域の保護膜上に透
明膜を還元して作製された、光透過率の低い遮光膜9が
形成される。尚、遮光膜9は、ITOだけでなく、Zn
O等の透明な金属酸化物を還元して形成しても良い。
In addition, a TFT or an abnormal T
On the protective film in the region of the TFT electrode 6R connected to the FT, a light-shielding film 9 having a low light transmittance and formed by reducing the transparent film is formed. The light shielding film 9 is made of not only ITO but also Zn.
It may be formed by reducing a transparent metal oxide such as O.

【0042】第3実施形態によれば、映像が鮮明になる
だけでなく、液晶表示装置の全面を層で覆うことになる
ので、完成後にTFTが故障しても、新規に膜を形成す
ることなく、その部分を新たに還元して不透明にするこ
とが可能になる。図7は、本発明の液晶表示装置の製造
時に用いられる紫外線による露光量と製造後の可視光に
よるコントラストとの関係図である。
According to the third embodiment, not only the image becomes clear, but also the entire surface of the liquid crystal display device is covered with a layer. Therefore, even if the TFT breaks down after completion, a new film can be formed. Instead, the part can be newly reduced and made opaque. FIG. 7 is a diagram showing the relationship between the amount of exposure to ultraviolet light used in manufacturing the liquid crystal display device of the present invention and the contrast of visible light after manufacture.

【0043】図中で、露光量は波長0.1〜0.3μm
の紫外線の露光時間と光量の積で表され、コントラスト
は可視光における暗い表示形態の光透過率と明るい表示
形態の光透過率との比である。図7に示すように、露光
量の増大に従って開口率は急減した後、一定値となった
後、逓減していく。
In the drawing, the exposure amount is 0.1 to 0.3 μm in wavelength.
The contrast is the ratio of the light transmittance of a dark display mode to the light transmittance of a bright display mode in visible light. As shown in FIG. 7, the aperture ratio sharply decreases as the exposure amount increases, reaches a constant value, and then gradually decreases.

【0044】一見望ましいと思われる、開口率の大きな
図7の領域Iは、紫外線による露光が不足し、電圧の強
弱に因らない光抜けが生じるため、コントラストが低
い。図7の領域IIは、従来より開口率及びコントラス
トが大きく、TFT電極を透過する光量が最大となる、
最も望ましい領域である。図7から、領域IIは、液晶
プロジェクタで望まれる300以上のコントラストの値
を満たしていることが分かる。
In the region I of FIG. 7, which is seemingly desirable, having a large aperture ratio, the exposure with ultraviolet rays is insufficient, and light leakage occurs regardless of the intensity of the voltage, so that the contrast is low. In the area II of FIG. 7, the aperture ratio and the contrast are larger than before, and the amount of light transmitted through the TFT electrode is maximized.
This is the most desirable area. From FIG. 7, it can be seen that the region II satisfies the contrast value of 300 or more desired by the liquid crystal projector.

【0045】また、露光が過剰になる図7の領域III
では、露光時の光の回り込みにより遮光膜の割合が増え
て光の透過率が減るので液晶表示装置の画面が暗くな
る。このように、紫外線による適度な露光条件によれ
ば、電界の有無によらず光抜けする部分が遮光されるの
で、液晶表示装置が鮮明になる。また、光を通さない遮
光膜と光を通すTFT電極との重なりを小さくできるか
ら、液晶表示装置が明るくなる。
Further, the region III in FIG.
In this case, the ratio of the light-shielding film increases due to the wraparound of light at the time of exposure, and the transmittance of the light decreases. As described above, under appropriate exposure conditions with ultraviolet light, a portion through which light leaks is shielded regardless of the presence or absence of an electric field, so that the liquid crystal display device becomes clear. Further, the overlap between the light-shielding film that does not transmit light and the TFT electrode that transmits light can be reduced, so that the liquid crystal display device becomes bright.

【0046】尚、本実施形態では、保護膜を介して遮光
膜を形成しているが、延伸したポリビニルアルコールに
沃素を分散させた偏光子の両側を覆う膜がポリイミド等
の耐薬品性の高い膜である場合、紫外線硬化性の保護膜
は必ずしも必要ではない。 (第4実施形態)本発明の第4実施形態を図8及び図9
に基づいて説明する。
In the present embodiment, the light-shielding film is formed via the protective film. However, the film covering both sides of the polarizer in which iodine is dispersed in stretched polyvinyl alcohol has high chemical resistance such as polyimide. In the case of a film, an ultraviolet-curable protective film is not necessarily required. (Fourth Embodiment) FIGS. 8 and 9 show a fourth embodiment of the present invention.
It will be described based on.

【0047】ここまでの実施形態は、BMとBM以外の
遮光膜とを紫外線露光により同時に作製していたが、以
下に述べるようにBMは、露光以前にあらかじめ作製さ
れた状態であっても良い。図8は対向基板上にBM16
を有する液晶表示装置の偏光板に直接、遮光膜を形成す
る本実施形態の液晶表示装置の製造工程図である。
In the embodiments described above, the BM and the light-shielding film other than the BM are simultaneously manufactured by ultraviolet exposure. However, as described below, the BM may be manufactured in advance before the exposure. . FIG. 8 shows BM16 on the opposite substrate.
FIG. 7 is a manufacturing process diagram of the liquid crystal display device of the present embodiment in which a light-shielding film is formed directly on the polarizing plate of the liquid crystal display device having the above.

【0048】図8aに示すように、表面がエポキシ樹脂
である対向偏光板5の上に光により着色する感光膜11
を堆積した後、TFT基板1側から平行紫外線12を照
射する。平行紫外線12は、異常なTFTに接続される
TFT電極6Rの領域だけを透過していく。
As shown in FIG. 8A, a photosensitive film 11 colored by light is placed on a counter polarizing plate 5 whose surface is an epoxy resin.
Is deposited, and parallel ultraviolet rays 12 are irradiated from the TFT substrate 1 side. The parallel ultraviolet rays 12 pass only through the region of the TFT electrode 6R connected to the abnormal TFT.

【0049】その結果、図8bに図示するように、光抜
けした領域だけに遮光膜9が形成される。図9はTFT
上にBM16を有する液晶表示装置の偏光板に直に遮光
膜を形成する本実施形態の液晶表示装置の製造工程図で
ある。図9aに示すように、表面がポリイミド樹脂であ
るTFT偏光板4の上に光により不透明になる感光膜1
1を積層した後、対向基板2側から平行紫外線12を照
射する。
As a result, as shown in FIG. 8B, the light-shielding film 9 is formed only in the light-exited region. Figure 9 shows a TFT
It is a manufacturing process figure of the liquid crystal display of this embodiment which forms a light-shielding film directly on the polarizing plate of the liquid crystal display having BM16 on top. As shown in FIG. 9A, a photosensitive film 1 which becomes opaque due to light on a TFT polarizing plate 4 whose surface is a polyimide resin.
After laminating 1, parallel ultraviolet rays 12 are irradiated from the counter substrate 2 side.

【0050】平行紫外線12は、正常なTFTに接続さ
れるTFT電極6Lと異常なTFTとの間の領域と、異
常なTFTに接続されるTFT電極6Rの領域とを透過
していく。そして、図9bに図示するように、光抜けし
た領域だけに遮光膜9が形成される。
The parallel ultraviolet rays 12 pass through a region between the TFT electrode 6L connected to the normal TFT and the abnormal TFT, and a region of the TFT electrode 6R connected to the abnormal TFT. Then, as shown in FIG. 9B, the light-shielding film 9 is formed only in the light-exited region.

【0051】本第4実施形態においては、正常なTFT
に接続されるTFT電極6Lの右端とTFT上を覆うB
M16とが離れていても、自己整合的にその対応する個
所に遮光膜9を形成できる。また、TFTを有する液晶
表示装置において、TFTの故障によって光抜けする画
素は必ず発生する。
In the fourth embodiment, a normal TFT
B covering the right end of the TFT electrode 6L connected to the
Even if M16 is separated, the light-shielding film 9 can be formed in a corresponding place in a self-aligned manner. Further, in a liquid crystal display device having a TFT, a pixel through which light leaks due to a failure of the TFT always occurs.

【0052】本発明の製造方法によって、光抜けする画
素を修正した場合、画素の周囲の光抜けも自動的に修正
されるので、一対の基板の位置合わせが従来より簡単に
なる。尚、以上の実施形態においては、TN型液晶の例
しか記述しなかったが、本発明はSTN型液晶や強誘電
性液晶に適用しても良い。
When a pixel that leaks light is corrected by the manufacturing method of the present invention, light leak around the pixel is also automatically corrected, so that the alignment of the pair of substrates becomes easier than before. In the above embodiment, only an example of a TN type liquid crystal has been described, but the present invention may be applied to an STN type liquid crystal or a ferroelectric liquid crystal.

【0053】[0053]

【発明の効果】以上に説明したように、液晶表示装置の
偏光板の外面に遮光膜を形成する液晶表示装置の製造方
法によれば、光抜けやTFTの光電流による液晶表示装
置のコントラストの低下が解消され、また、TFT電極
と遮光膜との位置ずれによる開口率の減少がなくなるか
ら、より明るく鮮明な液晶表示装置の製造方法が可能と
なる。
As described above, according to the method of manufacturing a liquid crystal display device in which a light-shielding film is formed on the outer surface of the polarizing plate of the liquid crystal display device, the contrast of the liquid crystal display device due to light leakage or photocurrent of the TFT is reduced. Since the decrease is eliminated and the aperture ratio does not decrease due to the displacement between the TFT electrode and the light-shielding film, a brighter and clearer manufacturing method of the liquid crystal display device becomes possible.

【0054】また、液晶表示装置の完成後の露光により
光透過率を下げたり、堆積膜をリフトオフしたり、透明
膜を選択還元したりして遮光膜を形成するので、本来、
光が遮断されている部分の光抜けを自己整合的に遮光で
きるだけでなく、液晶表示装置のスループットを向上さ
せることもできる。
Further, since the light transmittance is reduced by the exposure after the completion of the liquid crystal display device, the deposited film is lifted off, and the transparent film is selectively reduced, the light shielding film is formed.
Not only can light leakage in a portion where light is blocked be blocked in a self-aligned manner, but also the throughput of the liquid crystal display device can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の光で透過率が下がる感光膜を用いた液
晶表示装置の断面図である。
FIG. 1 is a cross-sectional view of a liquid crystal display device using a photosensitive film whose transmittance is reduced by light according to the present invention.

【図2】本発明の露光に左右される感光膜を用いた液晶
表示装置の断面工程図である。
FIG. 2 is a cross-sectional process diagram of a liquid crystal display device using a photosensitive film which is influenced by exposure according to the present invention.

【図3】本発明の遮光膜をリフトオフにより残した液晶
表示装置の断面図である。
FIG. 3 is a cross-sectional view of a liquid crystal display device in which a light-shielding film of the present invention is left by lift-off.

【図4】本発明の遮光膜をリフトオフによって残す液晶
表示装置の断面工程図である。
FIG. 4 is a sectional process view of the liquid crystal display device in which a light-shielding film of the present invention is left by lift-off.

【図5】本発明の透明膜を還元して遮光膜にした液晶表
示装置の断面図である。
FIG. 5 is a cross-sectional view of a liquid crystal display device in which a transparent film of the present invention is reduced to a light-shielding film.

【図6】本発明の透明膜を還元して遮光膜にする液晶表
示装置の断面工程図である。
FIG. 6 is a cross-sectional process diagram of the liquid crystal display device of the present invention in which a transparent film is reduced into a light shielding film.

【図7】本発明の紫外線の露光量と可視光下でのコント
ラストとの関係図である。
FIG. 7 is a diagram showing the relationship between the exposure amount of ultraviolet light and the contrast under visible light according to the present invention.

【図8】本発明の遮光膜とBMを対向基板に有する液晶
表示装置の断面工程図である。
FIG. 8 is a sectional process view of a liquid crystal display device having the light-shielding film and the BM of the present invention on a counter substrate.

【図9】本発明の遮光膜とBMをTFT基板に有する液
晶表示装置の工程図である。
FIG. 9 is a process diagram of a liquid crystal display device having a light-shielding film and a BM on a TFT substrate according to the present invention.

【図10】従来の遮光膜を対向基板の内面に設けた液晶
表示装置の断面図である。
FIG. 10 is a cross-sectional view of a conventional liquid crystal display device in which a light-shielding film is provided on an inner surface of a counter substrate.

【図11】従来の遮光膜をTFTの上方に設けた液晶表
示装置の断面図である。
FIG. 11 is a cross-sectional view of a conventional liquid crystal display device in which a light shielding film is provided above a TFT.

【図12】従来の遮光膜をTFT偏光板の内面に設けた
液晶表示装置の断面図である。
FIG. 12 is a cross-sectional view of a conventional liquid crystal display device in which a light-shielding film is provided on an inner surface of a TFT polarizing plate.

【符号の説明】[Explanation of symbols]

1 TFT基板 2 対向基板 3 液晶 4 TFT偏光板 5 対向偏光板 6 TFT電極 7 対向電極 8 配向膜 9 遮光膜 10 保護膜 11 感光膜 12 平行紫外線 13 堆積膜 14 透明膜 15 プラズマ 16 BM 6L 正常なTFTに接続されたTFT電極 6R 異常なTFTに接続されたTFT電極 DESCRIPTION OF SYMBOLS 1 TFT substrate 2 Counter substrate 3 Liquid crystal 4 TFT polarizing plate 5 Counter polarizing plate 6 TFT electrode 7 Counter electrode 8 Alignment film 9 Shielding film 10 Protective film 11 Photosensitive film 12 Parallel ultraviolet light 13 Deposition film 14 Transparent film 15 Plasma 16 BM 6L Normal TFT electrode connected to TFT 6R TFT electrode connected to abnormal TFT

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 一対の基板間に液晶を挟持し、一方の基
板に設けた画素群を暗い表示形態と明るい表示形態との
少なくとも二つの表示形態の間で駆動する液晶表示装置
の製造方法において、 液晶表示装置の全ての画素を暗い表示形態に設定した状
態において、液晶表示装置の光抜けする領域に対応する
少なくとも一方の基板の外側面に遮光膜を形成すること
を特徴とする液晶表示装置の製造方法。
1. A method of manufacturing a liquid crystal display device, comprising interposing a liquid crystal between a pair of substrates and driving a pixel group provided on one substrate between at least two display modes of a dark display mode and a bright display mode. A liquid crystal display device, wherein a light-shielding film is formed on an outer surface of at least one substrate corresponding to a light-exiting region of the liquid crystal display device in a state where all pixels of the liquid crystal display device are set to a dark display mode. Manufacturing method.
【請求項2】 前記光抜けする領域は、画素駆動用トラ
ンジスタ部または配線の欠陥によって設定状態にかかわ
らず明るい表示形態となった画素や、前記トランジスタ
部自身や、基板に平行な電界により光漏れする画素の周
辺や、一対の基板間の間隔制御するスペーサの周囲で液
晶の配向が乱れることから特定の液晶の厚さの場合に発
生し、スペーサの直径の数倍の大きさに達する輝点など
の領域であることを特徴とする請求項1記載の液晶表示
装置の製造方法。
2. The light-leakage region is formed by a pixel having a bright display mode irrespective of a setting state due to a defect of a pixel driving transistor portion or a wiring, or light leakage due to an electric field parallel to the transistor portion itself or a substrate. A bright spot that is generated at a specific liquid crystal thickness because the orientation of the liquid crystal is disturbed around the pixel to be controlled and around the spacer that controls the distance between the pair of substrates, and reaches several times the diameter of the spacer 2. The method for manufacturing a liquid crystal display device according to claim 1, wherein the region is a region such as
【請求項3】 前記遮光膜は、露光により光透過率が下
がる感光膜を形成した後、前記光抜けする領域から露出
する光によって前記感光膜を露光することにより形成し
たことを特徴とする請求項1記載の液晶表示装置の製造
方法。
3. The light-shielding film according to claim 1, wherein the light-shielding film is formed by forming a photosensitive film whose light transmittance is reduced by exposure, and exposing the photosensitive film with light exposed from the light-exiting region. Item 2. The method for manufacturing a liquid crystal display device according to Item 1.
【請求項4】 前記遮光膜は、露光により分解するポジ
レジスト型の感光膜を形成した後、前記光抜けする領域
から露出する光によって前記感光膜を露光後現像して、
前記暗い表示形態の画素の領域に感光膜を残存させ、続
いて不透明な堆積膜を全面に堆積し、感光膜を剥離する
ことによって形成したことを特徴とする請求項1記載の
液晶表示装置の製造方法。
4. The light-shielding film, after forming a positive resist type photosensitive film that decomposes by exposure, develops the photosensitive film after exposure by light exposed from the light-exiting area,
2. The liquid crystal display device according to claim 1, wherein a photosensitive film is left in a region of the pixel in the dark display mode, an opaque deposition film is deposited on the entire surface, and the photosensitive film is peeled off. Production method.
【請求項5】 前記遮光膜は、最初に還元により光透過
率が下がる透明膜を形成し、次に透明膜の外面に露光に
より分解するポジレジスト型の感光膜を形成した後、該
感光膜を前記光抜けする領域から露出する光によって露
光後現像し、前記暗い表示形態の画素の領域の透明膜上
に感光膜を残存させ、続いて感光膜に覆われていない光
抜けする領域の透明膜を還元することにより形成したこ
とを特徴とする請求項1記載の液晶表示装置の製造方
法。
5. The light-shielding film first forms a transparent film whose light transmittance is reduced by reduction, and then forms a positive resist type photosensitive film which is decomposed by exposure on the outer surface of the transparent film. Is developed after exposure by light exposed from the light-exiting region, a photosensitive film is left on the transparent film in the pixel region of the dark display mode, and then the transparent film in the light-exiting region not covered with the photosensitive film is exposed. 2. The method according to claim 1, wherein the film is formed by reducing the film.
JP8259639A 1996-09-30 1996-09-30 Production of liquid crystal display device Pending JPH10104596A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8259639A JPH10104596A (en) 1996-09-30 1996-09-30 Production of liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8259639A JPH10104596A (en) 1996-09-30 1996-09-30 Production of liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH10104596A true JPH10104596A (en) 1998-04-24

Family

ID=17336860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8259639A Pending JPH10104596A (en) 1996-09-30 1996-09-30 Production of liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH10104596A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010066340A (en) * 2008-09-09 2010-03-25 U-Tec Corp Detector for bright spot defect
CN103365013A (en) * 2013-07-01 2013-10-23 京东方科技集团股份有限公司 Array substrate, liquid crystal display screen and display device
CN104020604A (en) * 2014-06-18 2014-09-03 南京中电熊猫液晶显示科技有限公司 Two-sided transparent display device
CN111025777A (en) * 2019-12-31 2020-04-17 成都中电熊猫显示科技有限公司 Pixel structure and liquid crystal panel

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010066340A (en) * 2008-09-09 2010-03-25 U-Tec Corp Detector for bright spot defect
CN103365013A (en) * 2013-07-01 2013-10-23 京东方科技集团股份有限公司 Array substrate, liquid crystal display screen and display device
WO2015000269A1 (en) * 2013-07-01 2015-01-08 京东方科技集团股份有限公司 Array substrate, liquid crystal display screen, and display device
CN103365013B (en) * 2013-07-01 2016-03-02 京东方科技集团股份有限公司 A kind of array base palte, LCDs and display device
CN104020604A (en) * 2014-06-18 2014-09-03 南京中电熊猫液晶显示科技有限公司 Two-sided transparent display device
CN111025777A (en) * 2019-12-31 2020-04-17 成都中电熊猫显示科技有限公司 Pixel structure and liquid crystal panel
CN111025777B (en) * 2019-12-31 2023-05-09 成都京东方显示科技有限公司 Pixel structure and liquid crystal panel

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