CN104020604A - Two-sided transparent display device - Google Patents
Two-sided transparent display device Download PDFInfo
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- CN104020604A CN104020604A CN201410274652.4A CN201410274652A CN104020604A CN 104020604 A CN104020604 A CN 104020604A CN 201410274652 A CN201410274652 A CN 201410274652A CN 104020604 A CN104020604 A CN 104020604A
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Abstract
The invention discloses a two-sided transparent display device. The two-sided transparent display device comprises an array substrate, an opposite type substrate and a display dielectric layer. The array substrate is sequentially provided with a first black matrix pattern, a first metal layer pattern, a first metal insulation layer, a semiconductor layer, a second metal layer pattern, a protective insulation layer, a transparent organic insulation film and a pixel electrode in a matched mode, wherein the first black matrix pattern covers the first metal layer pattern and the second metal layer pattern. One side, facing the array substrate, of the opposite type substrate is provided with a second black matrix pattern in a matched mode. The second black matrix pattern covers the first metal layer pattern and the second metal layer pattern. The display dielectric layer is clamped between the array substrate and the opposite type substrate. The two-sided transparent display device can be watched from the obverse side and the reverse side, and the two sides are coincident in contrast ratio and are the same in display effect.
Description
Technical field
The present invention relates to display technique field, especially relate to a kind of two-side transparent display device.
Background technology
Thin Film Transistor-LCD (TFT-LCD) is jointly to be formed by array base palte, colored filter substrate and the liquid crystal that is located between this two substrates.TFT-LCD without backlight is equivalent to a liquid crystal light valve plate, under bright surround lighting irradiates, by driving circuit, drives this liquid crystal light valve plate to make beholder see the scene at TFT-LCD rear.
Transmission display screen makes beholder see that the device of display screen rear scene is called transparent display, and more common can be applicable to need be to present the use of display frame before showing physical item such as show window etc.The adoptable display technique of display panel that transparent display is arranged in pairs or groups has a variety of, so be widely used.By the improvement of material and technique, the transmitance of transparent display improves gradually.Without transparent display backlight, just becoming the emphasis of research in industry.
Fig. 1 is the structural representation of two-side transparent display device in prior art, and TFT-LCD display panel generally comprises colored filter substrate 12, array base palte 11 and sandwiched liquid crystal layer 13 formations therebetween as shown in Figure 1.On colored filter substrate 12, can be formed for successively the (not shown) such as black-matrix layer, chromatograph, common electrode, support column of shading, on array base palte 11, can form successively the (not shown) such as gate metal layer, gate insulator, semiconductor layer, source leakage metal level, source source/drain insulation layer, pixel electrode layer.
Without transparent display backlight, be generally double-sided display, from display both sides, can see picture.Owing to there is shading black matrix" in colored filter substrate side, its reflection coefficient is lower, lower for contrast impact.And when array base palte side is observed, due to gate metal and source, leak the reflective of metal level, and can cause watching while watching from array base palte side, contrast is low with respect to colored filter substrate side, and dazzle sense is serious.
For two-side transparent display, due to the metal reflective of array base palte side, can cause watching while watching from array base palte side, contrast is low with respect to colored filter substrate side, and dazzle sense is serious.
Summary of the invention
In view of this, for deficiency of the prior art, the invention provides a kind of two-side transparent display device, by the upper and lower both sides of the metal level in display device, configure black matrix" simultaneously, to eliminate array metal for the reflection of extraneous light, improve display comparison degree.
One embodiment of the invention provides a kind of two-side transparent display device, and it comprises:
Array basal plate, disposes the first black matrix pattern successively on it, the first metal layer pattern, the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection insulation course, transparent organic insulating film, pixel electrode, described the first black matrix pattern covers described first and second metal pattern;
One counter substrate disposes the second black matrix pattern at it in this array base palte one side, and this second black matrix pattern covers this first and second metal pattern;
One display dielectric layer, is located between this array base palte and this counter substrate.
Further embodiment of this invention also provides a kind of two-side transparent display device, and it comprises:
Array basal plate, disposes the first black matrix pattern successively on it, the first metal layer pattern, the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection insulation course, transparent organic insulating film, pixel electrode, the second black matrix pattern;
One counter substrate;
Wherein, described first and second black matrix pattern is overlapping, and covers described first and second metal pattern;
One display dielectric layer, is located between this array base palte and this counter substrate.
Another embodiment of the present invention also provides a kind of two-side transparent display device, and it comprises:
Array basal plate, has two surfaces, and the first black matrix pattern is set in surface thereof; On its another surface, dispose successively: the second black matrix pattern, the first metal layer pattern, the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection insulation course, transparent organic insulating film, pixel electrode;
One counter substrate;
Wherein, described first and second black matrix pattern is overlapping, and covers described first and second metal pattern;
One display dielectric layer, is located between this array base palte and this counter substrate.
Yet another embodiment of the invention also provides a kind of two-side transparent display device, and it comprises:
Array basal plate, has two surfaces, and the first black matrix pattern is set in surface thereof; On its another surface, dispose successively: the first metal layer pattern, the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection insulation course, transparent organic insulating film, pixel electrode;
One counter substrate disposes the second black matrix pattern at it in this array base palte one side;
Wherein, described first and second black matrix pattern is overlapping, and covers described first and second metal pattern;
One display dielectric layer, is located between this array base palte and this counter substrate.
In the middle of above-described embodiment, this first metal layer pattern comprises: sweep trace, storage electrode;
This second metal layer pattern comprises: data line, the first public electrode wire, the second public electrode wire, the source electrode of thin film transistor (TFT), drain electrode;
This first public electrode wire, has the discontinuous distributing line that is uniformly distributed gap;
This second public electrode wire, with this first public electrode wire pixel region that surrounds arranged in a crossed manner;
This data line, is arranged on the median vertical line of this pixel region, and passes this gap of this first public electrode wire;
This sweep trace, is arranged on the horizontal central line of this pixel region, and with the setting intersected with each other of this data line;
This thin film transistor (TFT), is arranged at this data line and this sweep trace intersection region;
This pixel electrode, and be electrically connected by the first contact hole and this thin film transistor (TFT);
This storage electrode, be disposed at this pixel electrode below, and overlapping with the projection of this first public electrode and this second public electrode, and this storage electrode is electrically connected by the second contact hole and this pixel electrode.
In the middle of above-described embodiment, this storage electrode is disposed at this first public electrode and the upper left corner of this second public electrode view field and the first area in the lower right corner, and this storage electrode configures the second projection region at non-this projection lap, on it, form this second contact hole, for this pixel electrode between equipotential be connected.
In the middle of above-described embodiment, this storage electrode is disposed at the lower left corner and the first area, the upper right corner of this first public electrode and this second public electrode view field, and this storage electrode configures the second projection region at non-this projection lap, on it, form this second contact hole, for this pixel electrode between equipotential be connected.
In the middle of above-described embodiment, below this pixel electrode, this first area of this storage electrode and this first public electrode and this second public electrode view field formation memory capacitance that partly overlaps.
In the middle of above-described embodiment, below this pixel electrode, this first area of this storage electrode and this first public electrode and this second public electrode view field overlap to form memory capacitance completely.
In the middle of above-described embodiment, this first and second public electrode wire is disposed at the below of this pixel electrode, and overlapping with this pixel electrode part.
Compared with prior art, its advantage is in the present invention: two-side transparent display device provided by the invention can be watched from tow sides, and the contrast on its two sides is consistent, and display effect is identical.
Accompanying drawing explanation
Fig. 1 is the structural representation of two-side transparent display device in prior art;
Fig. 2 is the structural representation of the two-side transparent display device of first embodiment of the invention;
Fig. 3 is the pixelated array structural representation of the two-side transparent display device shown in Fig. 2 of the present invention;
Fig. 4 (a) is the floor map of the black matrix" layer pattern of dot structure shown in Fig. 3 of the present invention;
Fig. 4 (b) is the sectional drawing of the black matrix" layer pattern AA ' direction of dot structure shown in Fig. 3 of the present invention;
Fig. 5 (a) is the planimetric map of the first metal layer pattern of dot structure shown in Fig. 2 of the present invention;
Fig. 5 (b) is the sectional drawing of the first metal layer pattern AA ' direction of dot structure shown in Fig. 2 of the present invention;
Fig. 6 (a) is the planimetric map of the semiconductor layer pattern of dot structure shown in Fig. 2 of the present invention;
Fig. 6 (b) is the sectional drawing of the semiconductor layer pattern AA ' direction of dot structure shown in Fig. 2 of the present invention;
Fig. 7 (a) is the planimetric map of the second metal layer pattern of dot structure shown in Fig. 2 of the present invention;
Fig. 7 (b) is the sectional drawing of second metal layer pattern AA ' direction of dot structure shown in Fig. 2 of the present invention;
Fig. 8 (a) is the planimetric map of the contact hole pattern of dot structure shown in Fig. 2 of the present invention;
Fig. 8 (b) is the sectional drawing of the contact hole pattern AA ' direction of dot structure shown in Fig. 2 of the present invention;
Fig. 9 (a) is the planimetric map of the pixel electrode pattern of dot structure shown in Fig. 2 of the present invention;
Fig. 9 (b) is the sectional drawing of the pixel electrode pattern AA ' direction of dot structure shown in Fig. 2 of the present invention;
Figure 10 is the structural representation of the two-side transparent display device of second embodiment of the invention;
Figure 11 is the pixelated array structural representation of the two-side transparent display device shown in Figure 10 of the present invention;
Figure 12 (a) is the planimetric map of the upside black matrix pattern of dot structure shown in Figure 10 of the present invention;
Figure 12 (b) is the sectional drawing of the upside black matrix pattern AA ' direction of dot structure shown in Figure 10 of the present invention;
Figure 13 (a) is the planimetric map of the contact hole pattern of dot structure shown in Figure 10 of the present invention;
Figure 13 (b) is the sectional drawing of the contact hole pattern AA ' direction of dot structure shown in Figure 10 of the present invention;
Figure 14 (a) is the planimetric map of the pixel electrode pattern of dot structure shown in Figure 10 of the present invention;
Figure 14 (b) is the sectional drawing of the pixel electrode pattern AA ' direction of dot structure shown in Figure 10 of the present invention;
Figure 15 is the structure of the two-side transparent display device of third embodiment of the invention;
Figure 16 (a) is the planimetric map of the pixelated array structure of the two-side transparent display device shown in Figure 15 of the present invention;
Figure 16 (b) is the sectional drawing of the AA ' direction of the pixelated array structure of the two-side transparent display device shown in Figure 15 of the present invention;
Figure 17 is the structure of the two-side transparent display device of fourth embodiment of the invention;
Figure 18 (a) is the planimetric map of the pixelated array structure of the two-side transparent display device based on shown in Figure 17;
Figure 18 (b) is the sectional drawing of AA ' direction of the pixelated array structure of the two-side transparent display device based on shown in Figure 17;
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment mono-:
Fig. 2 is the structural representation of the two-side transparent display device of first embodiment of the invention.As shown in Figure 2, a kind of two-side transparent display device, it comprises: array basal plate 21, disposes the first black matrix pattern 24, tft array device 25 successively on it; One counter substrate 22 disposes the second black matrix pattern 26 at it in these array base palte 21 1 sides, and this second black matrix pattern 26 covers this tft array device 25; One display dielectric layer 23, as liquid crystal, is located between this array base palte 21 and this counter substrate 22.
Wherein this tft array device 25 is specially the first metal layer pattern is set successively on this array base palte; the first metal dielectric layer; semiconductor layer; the second metal layer pattern; protection insulation course; transparent organic insulating film, pixel electrode, described the first black matrix pattern covers described first and second metal pattern.
Fig. 3 is the pixelated array structural representation of the two-side transparent display device shown in Fig. 2 of the present invention.As shown in Figure 3, this first metal layer pattern comprises: sweep trace 32, storage electrode 33; This second metal layer pattern comprises: data line 35, the first public electrode wires 36, the second public electrode wire, the source electrode of thin film transistor (TFT), drain electrode 37; This first public electrode wire 36, has the discontinuous distributing line that is uniformly distributed gap; This second public electrode wire, with this first public electrode wire 36 pixel region that surrounds arranged in a crossed manner; This data line 35, is arranged on the median vertical line of this pixel region, and passes this gap of this first public electrode wire; This sweep trace 32, is arranged on the horizontal central line of this pixel region, and with the setting intersected with each other of this data line 35; This thin film transistor (TFT), is arranged at this data line and this sweep trace 32 intersection regions; This pixel electrode 39, and be electrically connected by the first contact hole and this thin film transistor (TFT); This storage electrode 33, be disposed at this pixel electrode 39 below, and overlapping with the projection of this second public electrode with this first public electrode 36, and this storage electrode 33 is by the second contact hole and 39 electric connections of this pixel electrode.
As an embodiment, this storage electrode is disposed at this first public electrode and the upper left corner of this second public electrode view field and the first area in the lower right corner, and this storage electrode configures the second projection region at non-this projection lap, on it, form this second contact hole, for this pixel electrode between equipotential be connected.
As another embodiment, this storage electrode is disposed at the lower left corner and the first area, the upper right corner of this first public electrode and this second public electrode view field, and this storage electrode configures the second projection region at non-this projection lap, on it, form this second contact hole, for this pixel electrode between equipotential be connected.
In the above-described embodiments, below this pixel electrode, the view field of this first area of this storage electrode and this first public electrode and this second public electrode view field formation memory capacitance that partly overlaps.
In the middle of above-described embodiment, below this pixel electrode, the view field of this first area of this storage electrode and this first public electrode and this second public electrode overlaps to form memory capacitance completely.
In the middle of above-described embodiment, this first and second public electrode wire is disposed at the below of this pixel electrode, and overlapping with this pixel electrode part.
Pixelated array structure based on shown in Fig. 3, the method for making of its corresponding array base palte is as follows:
Step a, on glass substrate, applies black-matrix material, and black-matrix material is black organic material.The thickness of black matrix" is 0.01 micron to 2 microns, after the technique such as by exposure, develop, solidify, forms black matrix pattern as shown in Figure 4.
Step b, on black matrix", by chemical vapour deposition technique, forms inorganic insulation layer.The material of inorganic insulation layer can select SiNx, SiO2 or Al2O3 etc., preferably SiNx material.Then, above inorganic insulation layer, sputter forms the first metal layer, and the first metal layer can be metal or the alloys such as Ti, Al, Cu, Mo, and the thickness of the first metal layer is
by photoresist coating, exposure, development, etching, the technique such as peel off, form the patterns such as sweep trace as shown in Figure 5, storage electrode.
Step c, above the first metal layer, by chemical vapour deposition technique, forms semiconductor layer.Semiconductor material can be amorphous silicon, polysilicon or oxide semiconductor etc., and thickness is
extremely
the pattern of semiconductor layer as shown in Figure 6, is positioned at the center of pixel.
Steps d, above semiconductor layer, sputter forms the second metal level.The second metal level can be metal or the alloys such as Ti, Al, Cu, Mo, and the thickness that metal level is leaked in source is
by photoresist coating, exposure, development, etching, the technique such as peel off, form the patterns such as data line as shown in Figure 7, public electrode wire, TFT drain electrode.
Step e, on the second metal level, by chemical vapour deposition technique, forms inorganic insulation layer.The material of inorganic insulation layer can select SiNx, SiO2 or Al2O3 etc., preferably SiNx material.The thickness of inorganic insulation layer is
above inorganic insulation layer, apply organic insulator, the thickness of organic insulator is at 1um-3um.Above organic insulator, by photoresist coating, exposure, development, etching, the technique such as peel off, form contact hole pattern as shown in Figure 8, comprise the contact hole of TFT drain electrode top, and the contact hole of storage electrode top.
Step f, above organic insulating film and contact hole, sputter forms transparent conductive film, preferred ito thin film, thickness is
extremely
by photoresist coating, exposure, development, etching, the technique such as peel off, form pixel electrode pattern as shown in Figure 9.
Embodiment bis-:
Figure 10 is the structural representation of the two-side transparent display device of second embodiment of the invention, shown in Figure 10, the invention provides a kind of two-side transparent display device, it comprises: array basal plate 101, on it, dispose successively the first black matrix pattern 104, tft array device 105, the second black matrix patterns 106; One counter substrate 102, as colored filter substrate; Wherein, described first and second black matrix" 104,106 pattern overlappings, and cover described tft array device 105; One display dielectric layer 103, as liquid crystal, is located between this array base palte 101 and this counter substrate 102.
Referring to Figure 10,11, wherein, this tft array device 105 is specially the first metal layer pattern, the first metal dielectric layer, semiconductor layer 114, the second metal layer patterns, protection insulation course, transparent organic insulating film, pixel electrode.
Figure 11 is the pixelated array structural representation of the two-side transparent display device shown in Figure 10 of the present invention.As shown in figure 11, this first metal layer pattern comprises: sweep trace 112, storage electrode 113; This second metal layer pattern comprises: data line 115, the first public electrode wires 116, the second public electrode wire, the source electrode of thin film transistor (TFT), drain electrode 117; This first public electrode wire 116, has the discontinuous distributing line that is uniformly distributed gap; This second public electrode wire, with this first public electrode wire 116 pixel region that surrounds arranged in a crossed manner; This data line 115, is arranged on the median vertical line of this pixel region, and passes this gap of this first public electrode wire; This sweep trace 112, is arranged on the horizontal central line of this pixel region, and with the setting intersected with each other of this data line 115; This thin film transistor (TFT), is arranged at this data line and this sweep trace 112 intersection regions; This pixel electrode 110, and be electrically connected by the first contact hole and this thin film transistor (TFT); This storage electrode 113, be disposed at this pixel electrode 110 below, and overlapping with the projection of this second public electrode intersection region with this first public electrode 116, and this storage electrode 113 is by the second contact hole and 110 electric connections of this pixel electrode.
As an embodiment, this storage electrode is disposed at this first public electrode and the upper left corner of this second public electrode view field and the first area in the lower right corner, and this storage electrode configures the second projection region at non-this projection lap, on it, form this second contact hole, for this pixel electrode between equipotential be connected.
As another embodiment, this storage electrode is disposed at the lower left corner and the first area, the upper right corner of this first public electrode and this second public electrode view field, and this storage electrode configures the second projection region at non-this projection lap, on it, form this second contact hole, for this pixel electrode between equipotential be connected.
In the above-described embodiments, below this pixel electrode, this first area of this storage electrode and this first public electrode and this second public electrode view field formation memory capacitance that partly overlaps.
In the middle of above-described embodiment, below this pixel electrode, this first area of this storage electrode and this first public electrode and this second public electrode view field overlap to form memory capacitance completely.
In the middle of above-described embodiment, this first and second public electrode wire is disposed at the below of this pixel electrode, and overlapping with this pixel electrode part.
Picture element array structure based on shown in Figure 11, the method for making of corresponding array base palte is similar with embodiment mono-before the making step of the pattern of the second metal level:
Step a, on glass substrate, applies black-matrix material, and black-matrix material is black organic material.The thickness of black matrix" is 0.01 micron to 2 microns, after the technique such as by exposure, develop, solidify, forms black matrix pattern.
Step b, on black matrix", by chemical vapour deposition technique, forms inorganic insulation layer.The material of inorganic insulation layer can select SiNx, SiO2 or Al2O3 etc., preferably SiNx material.Then, above inorganic insulation layer, sputter forms the first metal layer, and the first metal layer can be metal or the alloys such as Ti, Al, Cu, Mo, and the thickness of the first metal layer is
by photoresist coating, exposure, development, etching, the technique such as peel off, form the patterns such as sweep trace, storage electrode.
Step c, above the first metal layer, by chemical vapour deposition technique, forms semiconductor layer.Semiconductor material can be amorphous silicon, polysilicon or oxide semiconductor etc., and thickness is
extremely
the pattern of semiconductor layer is positioned at the center of pixel.
Steps d, above semiconductor layer, sputter forms the second metal level.The second metal level can be metal or the alloys such as Ti, Al, Cu, Mo, and the thickness that metal level is leaked in source is
by photoresist coating, exposure, development, etching, the technique such as peel off, form the patterns such as data line, public electrode wire, TFT drain electrode.
Dot structure based on shown in Figure 11, method for making corresponding after the pattern of the second metal level is as follows:
Step e, on the second metal level, by chemical vapour deposition technique, forms inorganic insulation layer.The material of inorganic insulation layer can select SiNx, SiO2 or Al2O3 etc., preferably SiNx material.Above inorganic insulation layer, apply black-matrix material, black-matrix material is black organic material.The thickness of black matrix" is 0.01 micron to 2 microns, after the technique such as by exposure, develop, solidify, forms upside black matrix pattern as shown in figure 12.
Step f, above upside black-matrix layer, by chemical vapour deposition technique, forms inorganic insulation layer.The material of inorganic insulation layer can select SiNx, SiO2 or Al2O3 etc., preferably SiNx material.Above inorganic insulation layer, by photoresist coating, exposure, development, etching, the technique such as peel off, form contact hole pattern as shown in figure 13, comprise the contact hole of TFT drain electrode top, and the contact hole of storage electrode top.
Step g, above inorganic insulating membrane and contact hole, sputter forms transparent conductive film, preferred ito thin film, thickness is
extremely
by photoresist coating, exposure, development, etching, the technique such as peel off, form pixel electrode pattern as shown in figure 14.
As Figure 14 a, shown in 14b, this pixel electrode structure is specially: array basal plate is provided, forms successively the first black matrix" 111, sweep trace 112, storage electrode 113, semiconductor layer 114, data line 115, public electrode wire 116, TFT drain electrode 117, contact hole 118, upside black matrix" 119, pixel electrode 110 on it.Sweep trace 112 is with layer metal with storage electrode 113, is called first layer metal; Data line 115, public electrode wire 116 and TFT drain electrode 117 are with layer metal, are called second layer metal.The pattern of first layer metal and the pattern of second layer metal are all between the first black matrix" 119 and the second black matrix" 111.The surrounding of pixel is surrounded and is formed by common electrode lines 116, sweep trace 112 passes through in pixel region intermediate interdigitated with data line 115, TFT device is positioned at the center of pixel, and pixel electrode 110 is connected to the first metal layer storage electrode 113 by contact hole 118 forms memory capacitance with common electrode lines 116.
Embodiment tri-:
Figure 15 is the structure of the two-side transparent display device of third embodiment of the invention.As shown in figure 15, the invention provides a kind of two-side transparent display device, it comprises: array basal plate 151, there are two surfaces, and the first black matrix pattern 154 is set in surface thereof; On its another surface, dispose successively: the second black matrix pattern 156, the first metal layer pattern 154, tft array device 155; One counter substrate 152, as colored filter substrate; Wherein, described first and second black matrix pattern 154,156 is overlapping, and covers described tft array device 155; One display dielectric layer 153, as liquid crystal, is located between this array base palte 151 and this counter substrate 152.
Wherein, tft array device 155 is specially the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection insulation course, transparent organic insulating film, pixel electrode.
Figure 16 (a) is the planimetric map of the pixelated array structure of the two-side transparent display device shown in Figure 15 of the present invention; Figure 16 (b) is the sectional drawing of the AA ' direction of the pixelated array structure of the two-side transparent display device shown in Figure 15 of the present invention.As Figure 16 (a), shown in 16 (b), array basal plate is provided, on it, is followed successively by glass side black matrix" 161, sweep trace 162, storage electrode 163, semiconductor layer 164, data line 165, public electrode wire 166, TFT drain electrode 167, face side black matrix" 168, contact hole 169, pixel electrode 160.Sweep trace 162 is with layer metal with storage electrode 163, is called first layer metal; Data line 165, public electrode wire 166 and TFT drain electrode 167 are with layer metal, are called second layer metal.The surrounding of pixel is surrounded and is formed by common electrode lines 166, sweep trace 162 passes through in pixel region intermediate interdigitated with data line 165, TFT device is positioned at the center of pixel, and pixel electrode 160 is connected to the first metal layer storage electrode 163 by contact hole 169 forms memory capacitance with common electrode lines 166.
Described tft array device on array base palte in this embodiment, dot structure, pel array and preparation method thereof are similar to the above embodiments, do not repeat them here.
Embodiment tetra-:
Figure 17 is the structure of the two-side transparent display device of third embodiment of the invention.As shown in figure 17, provide a kind of two-side transparent display device, it comprises: array basal plate 171, there are two surfaces, and the first black matrix pattern 174 is set in surface thereof; On its another surface, dispose successively: tft array device 175; One counter substrate 172 as colored filter substrate, disposes the second black matrix pattern 176 at it in this array base palte one side; Wherein, described first and second black matrix pattern is overlapping 174,176, and covers described tft array device 175; One display dielectric layer 173, as liquid crystal, is located between this array base palte and this counter substrate.
Wherein, described tft array device 175 is specially the first metal layer pattern, the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection insulation course, transparent organic insulating film, pixel electrode.
Figure 18 (a) is the planimetric map of the pixelated array structure of the two-side transparent display device based on shown in Figure 17; Figure 18 (b) is the sectional drawing of AA ' direction of the pixelated array structure of the two-side transparent display device based on shown in Figure 17.As Figure 18 (a), shown in 18 (b), array basal plate is provided, on it, is followed successively by glass side black matrix" 181, sweep trace 182, storage electrode 183, semiconductor layer 184, data line 185, public electrode wire 186, TFT drain electrode 187, contact hole 188, pixel electrode 189.Sweep trace 182 is with layer metal with storage electrode 183, is called first layer metal; Data line 185, public electrode wire 186 and TFT drain electrode 187 are with layer metal, are called second layer metal.The surrounding of pixel is surrounded and is formed by common electrode lines 186, sweep trace 182 passes through in pixel region intermediate interdigitated with data line 185, TFT device is positioned at the center of pixel, and pixel electrode 189 is connected to the first metal layer storage electrode 183 by contact hole 188 forms memory capacitance with common electrode lines 186.
On array base palte in this embodiment described tft array device, dot structure, pel array and preparation method thereof similar to the above embodiments, do not repeat them here.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.
Claims (10)
1. a two-side transparent display device, it comprises:
Array basal plate, on it, dispose successively the first black matrix pattern, the first metal layer pattern, the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection insulation course, transparent organic insulating film, pixel electrode, described the first black matrix pattern covers described first and second metal layer pattern;
One counter substrate disposes the second black matrix pattern at it in this array base palte one side, and this second black matrix pattern covers this first and second metal layer pattern;
One display dielectric layer, is located between this array base palte and this counter substrate.
2. a two-side transparent display device, it comprises:
Array basal plate, disposes the first black matrix pattern successively on it, the first metal layer pattern, the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection insulation course, transparent organic insulating film, pixel electrode, the second black matrix pattern;
One counter substrate;
Wherein, described first and second black matrix pattern is overlapping, and covers described first and second metal pattern;
One display dielectric layer, is located between this array base palte and this counter substrate.
3. a two-side transparent display device, it comprises:
Array basal plate, has two surfaces, and the first black matrix pattern is set in surface thereof; On its another surface, dispose successively: the second black matrix pattern, the first metal layer pattern, the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection insulation course, transparent organic insulating film, pixel electrode;
One counter substrate;
Wherein, described first and second black matrix pattern is overlapping, and covers described first and second metal pattern;
One display dielectric layer, is located between this array base palte and this counter substrate.
4. a two-side transparent display device, it comprises:
Array basal plate, has two surfaces, and the first black matrix pattern is set in surface thereof; On its another surface, dispose successively: the first metal layer pattern, the first metal dielectric layer, semiconductor layer, the second metal layer pattern, protection insulation course, transparent organic insulating film, pixel electrode;
One counter substrate disposes the second black matrix pattern at it in this array base palte one side;
Wherein, described first and second black matrix pattern is overlapping, and covers described first and second metal pattern;
One display dielectric layer, is located between this array base palte and this counter substrate.
5. the two-side transparent display device as described in any one in claim 1-4, is characterized in that:
This first metal layer pattern comprises: sweep trace, storage electrode;
This second metal layer pattern comprises: data line, the first public electrode wire, the second public electrode wire, the source electrode of thin film transistor (TFT), drain electrode;
This first public electrode wire, has the discontinuous distributing line that is uniformly distributed gap;
This second public electrode wire, with this first public electrode wire pixel region that surrounds arranged in a crossed manner;
This data line, is arranged in the vertical direction of this pixel region, and passes this gap of this first public electrode wire;
This sweep trace, is arranged in the horizontal direction of this pixel region, and with the setting intersected with each other of this data line;
This thin film transistor (TFT), is arranged at this data line and this sweep trace intersection region;
This pixel electrode, and be electrically connected by the first contact hole and this thin film transistor (TFT);
This storage electrode, is disposed at the below of this pixel electrode, and overlapping with the projection of this first public electrode and this second public electrode, and this storage electrode is electrically connected by the second contact hole and this pixel electrode.
6. two-side transparent display device as claimed in claim 5, it is characterized in that: this storage electrode is disposed at this first public electrode and the upper left corner of this second public electrode view field and the first area in the lower right corner, and this storage electrode configures the second projection region at non-this projection lap, on it, form this second contact hole, for this pixel electrode between equipotential be connected.
7. two-side transparent display device as claimed in claim 5, it is characterized in that: this storage electrode is disposed at the lower left corner and the first area, the upper right corner of this first public electrode and this second public electrode view field, and this storage electrode configures the second projection region at non-this projection lap, on it, form this second contact hole, for this pixel electrode between equipotential be connected.
8. the two-side transparent display device as described in claim 6 or 7, is characterized in that: below this pixel electrode, and this first area of this storage electrode and this first public electrode and this second public electrode view field formation memory capacitance that partly overlaps.
9. the two-side transparent display device as described in claim 6 or 7, is characterized in that: below this pixel electrode, this first area of this storage electrode and this first public electrode and this second public electrode view field overlap to form memory capacitance completely.
10. the two-side transparent display device as described in claim 6 or 7, is characterized in that: this first and second public electrode wire is disposed at the below of this pixel electrode, and overlapping with this pixel electrode part.
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