JPH0997869A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPH0997869A
JPH0997869A JP7252233A JP25223395A JPH0997869A JP H0997869 A JPH0997869 A JP H0997869A JP 7252233 A JP7252233 A JP 7252233A JP 25223395 A JP25223395 A JP 25223395A JP H0997869 A JPH0997869 A JP H0997869A
Authority
JP
Japan
Prior art keywords
semiconductor element
stage
semiconductor device
resin
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7252233A
Other languages
Japanese (ja)
Inventor
Fumihiro Sei
文博 清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7252233A priority Critical patent/JPH0997869A/en
Publication of JPH0997869A publication Critical patent/JPH0997869A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Injection Moulding Of Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent a stage for mold resin from being peeled off in an ejection process after resin sealing regarding a semiconductor device and its manufacture where a semiconductor element is mounted on the stage of a lead frame, electrically connecting a lead terminal which is led externally and the electrode of the semiconductor element, and then the semiconductor element is subjected to resin sealing. SOLUTION: In a semiconductor device where a semiconductor element 1 is sealed by a mold resin 5 so that one edge part of a lead terminal 3 is led while the semiconductor element 1 is mounted on a stage 2 made of a metal plate and a plurality of electrode parts of the semiconductor element 1 and one edge part of the lead terminal 3 for external connection are electrically connected, a recessed part 2a which is made thinner than the other parts is formed on the lower surface of the stage 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、リードフレームのステ
ージ上に半導体素子を搭載し、外部に導出されるリード
端子と半導体素子の電極とを電気的に接続した後、半導
体素子を樹脂によって封止してなる半導体装置及びその
製造方法に関する。近年、電子機器の小型化に伴って、
半導体装置は薄型化する傾向にあり、外力による影響が
大きくなっている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention mounts a semiconductor element on a stage of a lead frame, electrically connects a lead terminal led to the outside and an electrode of the semiconductor element, and then seals the semiconductor element with a resin. The present invention relates to a stopped semiconductor device and a manufacturing method thereof. With the recent miniaturization of electronic devices,
Semiconductor devices tend to be thin, and the influence of external force is increasing.

【０００２】特に、樹脂モールド工程後における半導体
装置とモールド金型との分離時、即ちイジャクターピン
での突上げ時のダメージを緩和させることが望まれてい
る。In particular, it is desired to alleviate the damage at the time of separating the semiconductor device and the molding die after the resin molding process, that is, at the time of pushing up with the ejector pin.

【０００３】[0003]

【従来の技術】図５は従来の半導体装置の断面図であ
り、金属板からなるステージ２２上に半導体素子２１が
搭載され、この半導体素子２１の複数の電極部と外部に
導出されるリード端子２３とがワイヤー２４により電気
的に接続された状態でモールド樹脂２５により封止され
ている。2. Description of the Related Art FIG. 5 is a sectional view of a conventional semiconductor device, in which a semiconductor element 21 is mounted on a stage 22 made of a metal plate, and a plurality of electrode portions of the semiconductor element 21 and lead terminals led to the outside. 23 and 23 are electrically connected by a wire 24 and are sealed by a mold resin 25.

【０００４】モールド樹脂２５による封止工程は、それ
ぞれキャビティを有する上下の金型間に半導体素子２１
を搭載したリードフレームを介在させた状態として、キ
ャビティ内に樹脂を注入することによって行う。樹脂注
入後、所定の冷却時間をおいて半製品の半導体装置をモ
ールド金型から取り出すが、これは上下の金型を開くと
共に、下側よりイジェクターピンにより半導体装置の樹
脂部分を押し上げることによって行う。In the sealing process using the mold resin 25, the semiconductor element 21 is provided between the upper and lower molds each having a cavity.
This is performed by injecting resin into the cavity with the lead frame having the above-mentioned structure interposed. After injecting the resin, the semi-finished semiconductor device is taken out from the mold after a predetermined cooling time. This is done by opening the upper and lower molds and pushing up the resin part of the semiconductor device from below with ejector pins. .

【０００５】モールド樹脂２５の下面には、イジェクタ
ーピンが挿入されるピン用穴２６が予め形成されてお
り、このピン用穴２６をイジェクターピンが突上げるこ
とによって、下金型と半導体装置とが分離される。その
後、リードフレームの不要部分を切断すると共に、リー
ド端子２３の曲げ加工を行うことにより、図５に示す半
導体装置を完成させる。A pin hole 26 into which an ejector pin is inserted is formed in advance on the lower surface of the mold resin 25, and the ejector pin pushes up the pin hole 26 to separate the lower mold and the semiconductor device. To be separated. Then, unnecessary portions of the lead frame are cut and the lead terminals 23 are bent to complete the semiconductor device shown in FIG.

【０００６】[0006]

【発明が解決しようとする課題】近年、半導体装置は薄
型化する傾向にあり、モールド樹脂２５も薄く形成され
ている。このようにモールド樹脂２５が薄く形成された
半導体装置では、外力の影響を受け易く、従来の半導体
装置では、モールド金型より分離させる際のイジェクタ
ーピンと半導体素子２１を搭載しているステージ２２と
の距離が短くなり、イジェクターピンのストレスによっ
て、モールド樹脂２５とステージ２２との界面の密着力
が低下してしまう。この結果、モールド樹脂２５からの
ステージ剥離或いは膨れといった障害が発生することと
なる。In recent years, semiconductor devices have tended to be made thinner, and the molding resin 25 is also made thinner. In such a semiconductor device in which the molding resin 25 is formed thin, it is easily affected by an external force, and in the conventional semiconductor device, the ejector pin when separating from the molding die and the stage 22 on which the semiconductor element 21 is mounted are separated. The distance becomes shorter, and the stress of the ejector pin reduces the adhesive force at the interface between the mold resin 25 and the stage 22. As a result, problems such as stage peeling or swelling from the mold resin 25 will occur.

【０００７】本発明は、上記従来の課題を解決して、ス
テージの剥離或いは膨れを防止することにより、良好な
特性を有する半導体装置及びその製造方法を提供するこ
とを目的としている。An object of the present invention is to solve the above-mentioned conventional problems and to provide a semiconductor device having good characteristics by preventing peeling or swelling of a stage, and a manufacturing method thereof.

【０００８】[0008]

【課題を解決するための手段】上記課題を解決するため
の本発明は、金属板よりなるステージ２上に半導体素子
１が搭載され、該半導体素子１の複数の電極部と外部接
続用のリード端子３とが電気的に接続された状態で、前
記リード端子３の一端部が外部に導出されるように前記
半導体素子１がモールド樹脂５にて封止される半導体装
置において、前記ステージ２下面には、他の部分より薄
くされる凹部２ａが形成されていることを特徴としてい
る。According to the present invention for solving the above problems, a semiconductor element 1 is mounted on a stage 2 made of a metal plate, and a plurality of electrode portions of the semiconductor element 1 and leads for external connection. In a semiconductor device in which the semiconductor element 1 is sealed with a mold resin 5 so that one end of the lead terminal 3 is led to the outside in a state where the terminal 3 is electrically connected, the lower surface of the stage 2 Is characterized in that a concave portion 2a is formed to be thinner than other portions.

【０００９】[0009]

【作用】上記本発明の半導体装置によれば、モールド金
型とモールド樹脂とを分離する際に用いるイジェクター
ピンが接触する部分の樹脂厚さが確保されているため、
樹脂強度が大きくなり、イジェクターピンのストレスが
モールド樹脂とステージの界面部分に伝わることがな
く、ステージの剥離及び膨れ等の発生を抑えることが可
能となる。According to the above semiconductor device of the present invention, since the resin thickness of the portion in contact with the ejector pin used when separating the mold die and the mold resin is secured,
The resin strength is increased, the stress of the ejector pin is not transmitted to the interface between the mold resin and the stage, and it is possible to prevent the stage from peeling and swelling.

【００１０】[0010]

【実施例】以下に本発明の実施例を図面を参照しながら
詳細に説明する。図１は、本発明の第１実施例を示す半
導体装置の断面図であり、下面の所定箇所に凹部２ａを
有するステージ２上に半導体素子１が搭載された状態
で、半導体素子１の電極部と外部に導出されるリード端
子３とがワイヤー４によって電気的に接続され、ステー
ジ２及びワイヤー４等を含んで半導体素子１がモールド
樹脂５によって封止されている。Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a sectional view of a semiconductor device showing a first embodiment of the present invention, in which an electrode portion of the semiconductor element 1 is mounted on a stage 2 having a recess 2a at a predetermined position on the lower surface thereof. And the lead terminal 3 led out to the outside are electrically connected by the wire 4, and the semiconductor element 1 including the stage 2, the wire 4, etc. is sealed by the mold resin 5.

【００１１】尚、モールド樹脂５下面には、モールド樹
脂による封止工程後のモールド金型との分離時に用いる
イジェクターピンが挿入されるピン用穴６がステージ２
の凹部２ａに対向する位置に形成されている。次に、図
１に示す半導体装置の製造方法について説明する。図２
は、本発明の半導体装置に用いるリードフレームを示す
平面図であり、その裏面側から見たものである。On the lower surface of the mold resin 5, there is provided a pin hole 6 into which the ejector pin used for separation from the mold after the molding resin sealing step is inserted.
Is formed at a position facing the concave portion 2a. Next, a method for manufacturing the semiconductor device shown in FIG. 1 will be described. FIG.
[FIG. 4] is a plan view showing a lead frame used in the semiconductor device of the present invention, as seen from the back surface side thereof.

【００１２】本実施例のリードフレーム７は、プレス加
工或いはエッチング加工によって、中央の２箇所に他の
部分より薄く形成される凹部２ａを有するステージ２
と、その周辺部に位置する複数本のリード端子３とが一
体的に形成されたものとなっている。まず、この図２に
示すリードフレーム７のステージ２表面に銀ペースト等
の接着剤を介して半導体素子１を搭載する。その後、半
導体素子１の複数の電極とステージ２の周囲に位置する
リード端子３の一端部とをワイヤー４によって電気的に
接続する。The lead frame 7 of this embodiment has a stage 2 having a recess 2a formed in two central portions by press work or etching work so as to be thinner than other parts.
And a plurality of lead terminals 3 located in the periphery thereof are integrally formed. First, the semiconductor element 1 is mounted on the surface of the stage 2 of the lead frame 7 shown in FIG. 2 via an adhesive such as silver paste. After that, the plurality of electrodes of the semiconductor element 1 and one ends of the lead terminals 3 located around the stage 2 are electrically connected by the wires 4.

【００１３】以上の如くワイヤーボンディングを行った
後、半導体素子１を搭載したリードフレーム７をモール
ド金型内に挿入して、半導体素子１をモールド樹脂にて
封止する。図３は、モールド金型での樹脂封止工程を説
明するための断面図である。モールド金型は、それぞれ
キャビティ８ａ，９ａを有する上金型８、下金型９とよ
りなり、キャビティ８ａ，９ａ内に半導体素子１が位置
されるように、上金型８と下金型９の間に上記リードフ
レーム７を介在させる。After performing the wire bonding as described above, the lead frame 7 on which the semiconductor element 1 is mounted is inserted into the molding die, and the semiconductor element 1 is sealed with the molding resin. FIG. 3 is a cross-sectional view for explaining a resin sealing process using a molding die. The molding die includes an upper die 8 and a lower die 9 having cavities 8a and 9a, respectively. The upper die 8 and the lower die 9 are arranged so that the semiconductor element 1 is located in the cavities 8a and 9a. The lead frame 7 is interposed between them.

【００１４】そして、キャビティ８ａ，９ａ内に図示せ
ぬ樹脂通路を介して樹脂を充填することによって、ステ
ージ２及びリード端子３の一部を含んで半導体素子１を
モールド樹脂５にて封止する。半導体素子１を封止した
後、樹脂が冷却固化した時点で上金型８と下金型９とを
開くと同時に下金型９側よりイジェクターピン１０でモ
ールド樹脂５の下面を突き上げる。この際、イジェクタ
ーピン１０の先端は、モールド樹脂５のピン用穴６（図
１参照）内に接触している。Then, the semiconductor elements 1 including a part of the stage 2 and the lead terminals 3 are sealed with the molding resin 5 by filling the cavities 8a and 9a with a resin through a resin passage (not shown). . After the semiconductor element 1 is sealed, when the resin is cooled and solidified, the upper mold 8 and the lower mold 9 are opened, and at the same time, the lower surface of the mold resin 5 is pushed up by the ejector pin 10 from the lower mold 9 side. At this time, the tip of the ejector pin 10 is in contact with the pin hole 6 (see FIG. 1) of the mold resin 5.

【００１５】以上のように、半導体素子１がモールド樹
脂５にて封止された半製品状態の半導体装置をモールド
金型より分離させる。本実施例によれば、ステージ２の
イジェクターピン１０が接触する部分に対向する位置に
他の部分より薄くなるように凹部２ａが形成されている
ため、その部分のモールド樹脂５はステージ２とは反対
に他の部分より厚くなっている。そのため、イジェクタ
ーピン１０の先端部とステージ２との距離が確保され、
イジェクターピン１０のストレスによるモールド樹脂５
とステージ２との密着力の低下を防止することが可能と
なる。As described above, the semi-finished semiconductor device in which the semiconductor element 1 is sealed with the molding resin 5 is separated from the molding die. According to the present embodiment, since the recess 2a is formed at a position facing the portion where the ejector pin 10 of the stage 2 comes into contact with the recess 2a so as to be thinner than the other portion, the mold resin 5 at that portion is different from the stage 2. On the contrary, it is thicker than other parts. Therefore, the distance between the tip of the ejector pin 10 and the stage 2 is secured,
Mold resin 5 due to stress of ejector pin 10
It is possible to prevent a decrease in the adhesion force between the stage 2 and the stage.

【００１６】モールド金型より分離された半導体装置の
半製品は、次工程において、リードフレーム７の不要部
分が切断されると共に、リード端子３の曲げ加工が施さ
れることによって、図１に示す如き半導体装置が完成さ
れる。図４は、本発明の第２実施例を説明する半導体装
置断面図であり、前実施例と同一部分には同一符号を付
している。The semi-finished product of the semiconductor device separated from the mold is shown in FIG. 1 by cutting unnecessary portions of the lead frame 7 and bending the lead terminals 3 in the next step. Such a semiconductor device is completed. FIG. 4 is a sectional view of a semiconductor device for explaining a second embodiment of the present invention, in which the same parts as those in the previous embodiment are designated by the same reference numerals.

【００１７】本実施例では、半導体素子１を搭載するス
テージ１２の凹部１２ａが半導体素子１の下面まで貫通
する形状に形成されており、イジェクターピンが接触す
る部分のモールド樹脂５を更に厚くすることができるた
め、イジェクターピンによるストレスをより多く吸収す
ることができる。従って、イジェクターピンのストレス
による障害を更に抑止することができる。In the present embodiment, the recess 12a of the stage 12 on which the semiconductor element 1 is mounted is formed to penetrate to the lower surface of the semiconductor element 1, and the mold resin 5 in the portion in contact with the ejector pin should be made thicker. Therefore, it is possible to absorb more stress caused by the ejector pin. Therefore, the damage due to the stress of the ejector pin can be further suppressed.

【００１８】[0018]

【効果】以上説明した本発明による半導体装置、及び半
導体装置の製造方法によれば、モールド樹脂の全体亡き
厚みを薄くした場合においても、モールド金型とモール
ド樹脂とを分離する際に用いるイジェクターピンが接触
する部分の樹脂厚さが十分確保されているため、樹脂強
度が大きくなる。According to the semiconductor device and the method for manufacturing a semiconductor device according to the present invention described above, the ejector pin used for separating the mold die from the mold resin even when the overall thickness of the mold resin is reduced. Since the resin thickness of the portion in contact with is sufficiently secured, the resin strength increases.

【００１９】従って、イジェクターピンのストレスがモ
ールド樹脂とステージとの界面部分まで伝わることがな
く、モールド樹脂からのステージの剥離及び膨れ等の障
害を防止することが可能となる。Therefore, the stress of the ejector pin does not reach the interface between the mold resin and the stage, and it is possible to prevent the stage from peeling and swelling from the mold resin.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の第１実施例を説明するための半導体装
置断面図である。FIG. 1 is a sectional view of a semiconductor device for explaining a first embodiment of the present invention.

【図２】本発明の半導体装置に用いるリードフレームを
示す平面図である。FIG. 2 is a plan view showing a lead frame used in the semiconductor device of the present invention.

【図３】本発明の半導体装置の製造方法に係り、モール
ド金型での樹脂封止工程を説明するための断面図であ
る。FIG. 3 is a cross-sectional view for explaining a resin sealing step with a molding die according to the method for manufacturing a semiconductor device of the present invention.

【図４】本発明の第２実施例を説明するための半導体装
置断面図である。FIG. 4 is a sectional view of a semiconductor device for explaining a second embodiment of the present invention.

【図５】従来の半導体装置を説明するための断面図であ
る。FIG. 5 is a cross-sectional view for explaining a conventional semiconductor device.

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 金属板よりなるステージ（２）上に半導
体素子（１）が搭載され、該半導体素子（１）の複数の
電極部と外部接続用のリード端子（３）とが電気的に接
続された状態で、前記リード端子（３）の一端部が外部
に導出されるように前記半導体素子（１）がモールド樹
脂（５）にて封止される半導体装置において、 前記ステージ（２）下面には、他の部分より薄くされる
凹部（２ａ）が形成され、該凹部（２ａ）は、モールド
金型との分離時に用いるイジェクターピンが挿入される
モールド樹脂（５）下面のピン用穴（７）に対向する位
置に設けられていることを特徴とする半導体装置。1. A semiconductor element (1) is mounted on a stage (2) made of a metal plate, and a plurality of electrode portions of the semiconductor element (1) and a lead terminal (3) for external connection are electrically connected. A semiconductor device in which the semiconductor element (1) is sealed with a mold resin (5) so that one end of the lead terminal (3) is led out to the outside in a connected state, the stage (2) A recess (2a) that is thinner than other portions is formed on the lower surface, and the recess (2a) is a pin hole on the lower surface of the mold resin (5) into which an ejector pin used when separating from the mold is inserted. A semiconductor device provided at a position facing (7). 【請求項２】 前記ステージ（２）の凹部（２ａ）は、
貫通して半導体素子（１）の下面とモールド樹脂（５）
とが接触していることを特徴とする請求項１記載の半導
体装置。2. The recess (2a) of the stage (2) is
Through the bottom surface of the semiconductor element (1) and the molding resin (5)
The semiconductor device according to claim 1, wherein is in contact with. 【請求項３】 裏面の所定位置に凹部（２ａ）を有する
半導体素子搭載用のステージ（２）と、該ステージ
（２）の周辺部に位置する複数本のリード端子（３）と
が一体的に備えられてなるリードフレーム（７）の前記
ステージ（２）上面に半導体素子（１）を搭載する工
程、 該半導体素子（１）の複数の電極部と前記リード端子
（３）とを電気的に接続する工程、 半導体素子（１）を搭載したリードフレーム（７）をそ
れぞれキャビティを有する上下のモールド金型（８，
９）間に介在させた後、キャビティ内に樹脂を注入して
前記半導体素子（１）を封止する工程、 前記上下のモールド金型を開くと共に、下側よりイジェ
クターピン（１０）によってモールド樹脂（５）突上げ
ることにより、該モールド樹脂（５）とモールド金型と
を分離する工程、 前記リードフレーム（７）の不要部を切断すると共に、
リード端子（３）の曲げ加工を行う工程を順次施すこと
を特徴とする半導体装置の製造方法。3. A semiconductor element mounting stage (2) having a recess (2a) at a predetermined position on the back surface, and a plurality of lead terminals (3) located in the peripheral portion of the stage (2) are integrated. A step of mounting the semiconductor element (1) on the upper surface of the stage (2) of the lead frame (7) provided in the semiconductor device, wherein the plurality of electrode portions of the semiconductor element (1) and the lead terminals (3) are electrically connected. , The lead frame (7) on which the semiconductor element (1) is mounted has upper and lower mold dies (8,
9) a step of injecting a resin into the cavity to seal the semiconductor element (1) after interposing it therebetween, and opening and closing the upper and lower molding dies, and molding resin by an ejector pin (10) from below. (5) A step of separating the molding resin (5) and the molding die by pushing up, cutting unnecessary portions of the lead frame (7), and
A method of manufacturing a semiconductor device, which comprises sequentially performing a step of bending a lead terminal (3).
JP7252233A 1995-09-29 1995-09-29 Semiconductor device and its manufacture Pending JPH0997869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7252233A JPH0997869A (en) 1995-09-29 1995-09-29 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7252233A JPH0997869A (en) 1995-09-29 1995-09-29 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPH0997869A true JPH0997869A (en) 1997-04-08

Family

ID=17234377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7252233A Pending JPH0997869A (en) 1995-09-29 1995-09-29 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPH0997869A (en)

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