JPH0992135A - Pattern forming method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a pattern forming method by which excessive cutting and noncutting by a sand blast are not caused. SOLUTION: An auxiliary mask 16 which has sand blast resistant characteristics and whose film thickness is adjusted so that excessive cutting in a cutting speed fast area 18a and noncutting in a cutting speed slow area are not caused, is pre-arranged in an area 18b where cutting speed by a sand blast becomes slow. Cuttings to the cutting speed slow area 18b and the cutting speed fast area 18a are simultaneously finished.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern forming method for a DC type gas discharge display panel (DC type PDP).

[0002]

2. Description of the Related Art DC type PDP using a sandblast method
As a pattern forming method, there is a method disclosed in Document I (Document I: 1992, Technical Report of the Institute of Electrical Communication, EID 91-104, pp. 53-56). This document I discloses a method of forming a partition using a sandblast method.

According to this conventional method, first, a Ni cathode is formed at a predetermined position on the rear substrate by a printing method. Next, a dielectric layer is embedded and formed on the surface of the back substrate including the cathode by using a blade coating method. Then, in order to form a display cell on the dielectric layer, a dry film serving as an anti-sandblast mask is laminated and exposed and developed to form an anti-sandblast mask. Subsequently, the dielectric layer is cut by sandblasting from above the dielectric layer using a sandblasting device to form partitions.

[0004]

However, in the conventional method of forming barrier ribs by sandblasting, when the barrier ribs having the display cells and the auxiliary cells of the DC type PDP are to be simultaneously formed, there are the following problems. It was The shape and size of the display cell and the auxiliary cell viewed from the front of the panel in a DC type PDP are different from each other, and when both are cut by sandblasting,
There is a difference in the cutting speed between a region where the cutting speed is high (corresponding to the display cell region) and a region where the cutting speed is low (corresponding to the auxiliary cell region). This state will be described in detail with reference to FIGS. 6 and 7 (shown in a sectional view taken along a plane orthogonal to the front surface of the panel).

The display anodes 32 are formed on the rear substrate 30 with a space therebetween. After that, the auxiliary anode 34 is formed at the center of the display anode 32 ((A) of FIG. 6). Then, the display anode 3
The surface of the back substrate 30 including the electrode 2 and the auxiliary anode 34 is covered with a dielectric layer 36.

Next, an anti-sandblast mask 38 corresponding to the partition pattern is formed on the dielectric layer 36 (FIG. 6B). Usually, the display cell region 39 is formed to be larger in dimension than the auxiliary cell region 41.

Next, a cutting material (cutting powder) is blown from above the dielectric layer 36 in a direction perpendicular to the surface of the dielectric layer 36 using a sandblasting machine to cut the dielectric layer 36 (FIG. (C) of 6). At this time, the display cell area 39
However, since it is dimensionally larger than the auxiliary cell region 41, a difference occurs in the cutting speed. That is, the cutting speed on the display cell side increases, and the planned cutting on the display cell side ends during the cutting on the auxiliary cell side ((A) in FIG. 7).

After that, when cutting is continued, the display cell area 3
9 dielectric layer, that is, a partition wall 36a made of a dielectric layer
Will exceed the planned cutting, and will be in an excessively cutting state under the influence of the rebound of the cutting material, and the inner wall of the display cell partition wall 36a will be cut to form a recess in the wall surface. Therefore, the thickness of the partition wall 36a becomes thin, and in an extreme case, a hole is formed in the partition wall 36a. The end point of sandblasting is the end of cutting when the auxiliary cell is formed as planned ((B) of FIG. 7). After that, the sandblast resistant 38 is removed by any suitable method to form the partition wall 36a ((C) of FIG. 7).

A partition wall 36a formed through the above steps
Since the inner wall of the partition wall on the display cell side is excessively cut, the wall thickness of the partition wall becomes thin, which causes erroneous discharge and discharge leakage when the DC type PDP is constructed.

[0010] Therefore, the emergence of a pattern forming method that does not cause excessive cutting and uncut by sandblasting has been desired.

[0011]

Therefore, according to the pattern forming method of the present invention, when the different regions of the layer to be processed are cut by the same sandblasting process to form the pattern of the layer to be processed, the cutting by sandblasting is performed. For the region where the speed is slow, the film has an anti-sandblast property in advance, and the film thickness is adjusted so as not to cause excess in the region where the cutting speed is high and uncut in the region where the cutting speed is slow. It is characterized in that an auxiliary mask is provided, and the cutting of a region with a low cutting speed and a region with a high cutting speed are simultaneously finished.

As described above, since the auxiliary mask having the adjusted film thickness is provided in advance in the region where the cutting speed is low, the film thickness of the layer to be processed on the side where the auxiliary mask is formed becomes thin. Therefore, it is possible to simultaneously finish the cutting in the high cutting speed region and the low cutting speed region. Therefore, it is possible to avoid excessive cutting and uncutting in the respective regions, and it is possible to reduce damage to the layer to be processed in the regions where the cutting speed is high.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, with reference to the drawings, an embodiment of a pattern forming method of barrier ribs and electrodes used in a DC type gas discharge display panel (hereinafter referred to as DC type PDP) in the present invention will be described. It should be noted that each drawing merely schematically shows the shape, size, and arrangement relationship of each component so that the present invention can be understood. Also, although specific materials and conditions are used in the following description, these materials and conditions are merely examples of preferred embodiments, and thus,
The present invention is not limited to this.

<1. Method of Forming Partition> In order to facilitate understanding of the present invention, first, with reference to FIG. 1, a schematic structure of a rear substrate panel suitable for application of the present invention will be described.

Stripe-shaped display anodes 12 are arranged in two rows on the rear substrate 10, and auxiliary anodes 14 are arranged in parallel between the display anodes 12 in one row. However, the actual panel is the display anode 1
A large number of 2 and the auxiliary anodes 14 are arranged at a ratio of 2: 1.

Around the display anode 12, partition walls 21 (21a and 21b) for forming a display discharge are provided, and a window surrounded by the partition walls 21 (21a and 21b) is called a display cell 17. . In this embodiment,
The partition wall 21 in the direction parallel to the display anode 12 is indicated by the reference numeral 21a, and the partition wall 2 in the direction orthogonal to the display anode 12 is shown.
1 is indicated by the reference numeral 21b. Further, phosphors 22a and 22b are provided on the inner wall of the partition wall 21 of the display cell 17.

On the other hand, a partition wall 21a for forming an auxiliary discharge is provided around the auxiliary anode 14, and the partition wall 21a.
The area sandwiched by a is called an auxiliary cell 19.

Next, with reference to FIGS. 2, 3 and 4, the pattern forming method according to the present invention will be described by taking a method of forming partition walls by a sandblast method as an example. 2 and 3 are views for explaining the step of forming the partition wall, and show a cut cross section in the middle of the step when cut along the line X-X in FIG. Further, FIG. 4 is a plan view of the structure in the step (B) of FIG. 3 as viewed from above.

First, a glass substrate (hereinafter referred to as a substrate) is used as the rear substrate 10. On this substrate 10, two rows of stripe-shaped display anodes 12 and one row of auxiliary anodes 14 are sequentially formed in the center of the display anodes 12 by screen printing. In this embodiment, the material of the display anode 12 is aluminum paste (for example, Okuno Pharmaceutical Co., Ltd .: trade name DS-5002), and the material of the auxiliary anode 14 is nickel paste (for example, Electro Science Laboratory: trade name # 2554). ).

After printing the respective pastes for the display anode 12 and the auxiliary anode 14 on the substrate 10, the pastes are dried (at 150 ° C. for 10 minutes).

After that, the structure in which the paste is formed is carried into a heating furnace and subjected to a firing treatment (holding at 580 ° C. for 10 minutes) to form the display anode 12 and the auxiliary anode 14. Here, the substrate 10, the display electrode 12, and the auxiliary anode 14 are collectively referred to as a base 11.

Next, the film thickness is adjusted on the auxiliary anode 14 so as to have an anti-sandblast property and to prevent excessive cutting in a high cutting speed region and uncut cutting in a low cutting speed region. The auxiliary mask 16 is formed ((A) of FIG. 2). Here, the area where the cutting speed is high (also referred to as a display cell area) is the sandblast resistant masks 20a and 2a.
A region between 0b and a region between 20c and 20d, and a region having a slow cutting speed (also referred to as an auxiliary cell region) is defined as a region between the sandblast resistant masks 20b and 20c.

The film thickness of the auxiliary mask 16 at this time must be determined in advance to a suitable value. How to determine the film thickness will be described with reference to FIGS. 6 and 7 already described.

The display anode 32 and the auxiliary anode 34 are formed on the rear substrate 30, and then the dielectric layer 36 is formed on the surface of the substrate 30 including the display anode 32 and the auxiliary anode 34. Here, the film thickness of the dielectric layer 36 is 150 to 250 μm.
m ((A) and (B) in FIG. 6).

Then, a sandblast resistant mask 38 having a region 39 having a high cutting speed and a region 41 having a low cutting speed is formed on the dielectric layer 36 ((B) of FIG. 6).

Next, the region 39 and the region 41 having a high cutting speed are simultaneously cut by the sandblast method. At this time, as described above, the region 39 with a high cutting speed is used.
Region 41 having a slower cutting speed than the region 41 having a slower cutting speed than the region 41 having a slower cutting speed.
In No. 1, the surface does not reach the surface of the auxiliary anode 34 yet, and the state becomes uncut (see FIG. 7A). Here, the uncut dielectric layer is denoted by reference numeral 36b. At this time, the film thickness of the dielectric layer 36b remaining as uncut is measured. Assuming that the film thickness of the remaining dielectric layer 36b is t, the film thickness of the auxiliary mask is equal to or slightly larger than the value of the film thickness t of the remaining dielectric layer 36b. It may be set to the film thickness.

If an auxiliary mask having such a film thickness is provided on the upper surface of the auxiliary anode 34, when the region 39 with a high cutting speed has finished cutting as planned, it will reach just the upper surface of the auxiliary mask. Cutting will be completed as scheduled.

In this embodiment, the material of the dielectric layer 36 that is normally used, that is, a dielectric paste (for example, Sumitomo Metal Mining Co., Ltd .: trade name GLP16062) is used, and the difference in cutting speed in the regions 39 and 41 is taken into consideration. The film thickness of the auxiliary mask is preferably about 25 to 50 μm. Here, the material of the auxiliary mask 16 is a dry film resist (for example, manufactured by Tokyo Ohka Co., Ltd .: trade name ORDYL, BF403).

Next, returning to FIG. 2B, the subsequent steps of the present invention will be described. A layer to be processed 18, here a dielectric layer, is formed so that the auxiliary mask 16 and the display anode 12 are embedded in the surface of the substrate 10 including the auxiliary mask 16 and the display anode 12. Here, this processed layer 18
Is referred to as a dielectric layer. The dielectric layer 18 is first formed by solid-printing a dielectric paste (for example, manufactured by Sumitomo Metal Mining Co., Ltd .: trade name GLP16062) on the surface of the substrate 10 including the auxiliary mask 16 and the display anode 12 using a screen printing method. The dielectric paste is dried (150 ° C., 10 minutes).

Next, the barrier ribs 21a and 21b shown in FIG. 1 necessary to define the display cell region and the auxiliary cell region are formed on the dielectric layer 18, and thus the barrier ribs 2a and 21b are formed.
Sandblast resistant mask 20 (20a, 20b, 20c, 2) having substantially the same pattern shape as 1a, 21b.
0d) is formed ((B) of FIG. 2). The mask 20 defines an area 18a having a high cutting speed (area corresponding to the display cell area) 18a and an area 18b having a low cutting speed (area corresponding to the auxiliary cell area) 18b in the dielectric layer 18. In this case, the material of the sandblast resistant mask 20 is dry film resist (for example, manufactured by Tokyo Ohka Co., Ltd .: trade name ORDYL, BF403).

Next, a cutting material (for example, Fuji Seisakusho: trade name SiC # 1000) is sprayed onto the surface of the dielectric layer 18 from above the dielectric layer 18 by using a sandblasting device, except for the sandblast resistant mask 20. The dielectric layer 18 exposed at the bottom is cut ((C) in FIG. 2) to finally form the layer patterns 21a and 21b to be processed (FIG. 3).
(A)). Here, the processed layer patterns 21a and 21b form partition walls. At this time, the dielectric layer 18
The area corresponding to the display cell area 18a of the auxiliary cell area 1
Since the cutting speed is higher than that in the region corresponding to 8b, deeper cutting is performed at the same time. However, since the auxiliary mask 16 is formed in advance on the auxiliary anode 14 in the area corresponding to the auxiliary cell area 18b, the dielectric layer portion in the area corresponding to the display cell area 18a is cut and the auxiliary mask 16 is cut into the area. The surface of the substrate 10 appears, and at the same time when this region reaches the end point, the region corresponding to the auxiliary cell region 18b has just reached the upper surface of the auxiliary mask 16 and the cutting in this region is completed. Therefore, since the dielectric layer 18 is not excessively cut, the partition wall 2 formed on the display cell region 18a side
The inner wall surfaces of 1a and 21b are not damaged, and partition walls 21a and 21b that are almost vertical are obtained.

Next, the sandblast resistant mask 20 and the exposed auxiliary mask 16 are removed by using any suitable method ((B) in FIG. 3). Then, the treated structure is loaded into a heating furnace and fired (580 ° C., 10 minutes) to form partition walls. In this way, the partition wall 2 is provided on the display anode side.
The display cell 17 sandwiched by 1 is formed, and the auxiliary cell 19 sandwiched by the partition wall 21a is formed on the auxiliary anode side. Further, FIG. 4 shows a configuration of the structure formed in the step (B) of FIG. 3 when seen from a plane. Note that FIG. 4 is a plan view for explaining the partition structure during the formation of the back substrate panel.

A plurality of display cells 17 are formed on the display anode 12 side, and a plurality of auxiliary cells 19 are also formed on the auxiliary anode 14 side (in FIG. 4, only one column is displayed. ).

Next, after the phosphor paste is embedded in the partition walls 21a and 21b on the display cell 17 side by a printing method, the phosphor paste is dried (150 ° C., 10 minutes).
Let it. The phosphor paste at this time is preferably a mixture of a phosphor powder and a resin vehicle. The phosphor powder is red (made by Kasei Optonix:
Product name KX504A), green (made by Kasei Optonix KK:
Product name P1G1) and blue (made by Kasei Optonix):
The powder of the product name KX501A) is used, and the screen oil (for example, product name # 6009 manufactured by Okuno Pharmaceutical Co., Ltd.) is used as the material of the resin vehicle.

Next, a part of the phosphor 22 (22a and 22b) embedded in the partition walls 21a and 21b of the display cell 17 is cut by using, for example, a sandblast method to leave the phosphor 22 on the inner wall surface. The portion of the phosphor 22 around the display anode 12 is removed to expose a part of the display anode 12 on the bottom surface of the display cell 17 to obtain the structure shown in FIG. Then, the phosphor paste is fired (580 ° C., 1
The phosphor 22 is formed after 0 minutes (FIG. 3C).
Through the above-described steps, the rear substrate panel is completed.

On the other hand, a front substrate (not shown) provided facing the rear substrate is formed. A glass substrate is used as the front substrate. A striped cathode is formed on the front substrate so as to be orthogonal to the display anode of the rear substrate. A Ni paste layer for forming a cathode is formed by screen printing using, for example, a Ni paste (produced by Electroscience Laboratories, trade name # 2554) as a material of the cathode. Thereafter, the Ni paste layer is dried (150 ° C., 1
0 minutes) and dry. Further, the structure of the front substrate is carried into a heating furnace and subjected to heat treatment (about 580 ° C. for 10 minutes), and N
The i paste layer is fired to form a cathode.

Using this front substrate and the already formed rear substrate panel, the cathode of the front substrate and the display anode of the rear substrate are connected so as to be orthogonal to each other, and then a discharge gas is optionally and preferably enclosed in the display cell. DC type PDP is completed.

<2. Method of Forming Electrodes> Next, as a second embodiment, an example of forming an electrode pattern on the rear substrate by using the sandblast method will be described with reference to FIGS.

FIGS. 5A to 5D are cross-sectional views for explaining a step of forming an electrode by the sandblast method.

In the second embodiment, the auxiliary mask 23 is formed on the rear substrate 10 in parallel and at a distance from each other. Also in this case, as in the case of the above-described first embodiment, the film thickness of the auxiliary mask 23 is set in advance so that excessive cutting and uncutting do not occur in a region where the cutting speed is fast and a region where the cutting speed is slow. Determine the thickness.

After that, an electrode preliminary layer is formed as the layer to be processed 24 on the rear substrate 10 so as to fill the auxiliary mask 23 ((A) of FIG. 5). The auxiliary mask 23 is formed by using a dry film resist, and the electrode preliminary layer 24 is formed by using aluminum or nickel paste. After forming the electrode preliminary layer 24, the auxiliary mask 23 is sandwiched between the electrode preliminary layer 24 and the auxiliary mask 23.
The sandblasting-resistant mask 26 is formed at a position opposed to or against the auxiliary mask 23 (FIG. 5B).

Next, the electrode preliminary layer 24 is cut by blowing a cutting material from above the substrate to the region 25 having a high cutting speed and the region 27 having a low cutting speed from above the substrate by using the sandblast method. Display anodes 24a, 24b, 2
4d and 24e, and the auxiliary anode 24c are formed ((C) of FIG. 5).

Thereafter, the remaining sandblast resistant mask 26 and auxiliary mask 23 are formed using any suitable method.
Are removed ((D) of FIG. 5). Through these steps, the patterns of the display anodes 24a, 24b, 24d, 24e and the auxiliary anode 24c are formed on the substrate 10.

Even when the electrode pattern is formed, since the auxiliary mask 23 is provided on the bottom surface of the electrode preliminary layer in the region where the cutting speed is slow, the time for completing the cutting of both regions can be adjusted. Therefore, excessive cutting due to sandblasting of the side wall surfaces of the display anodes 24a, 24b, 24d and 24e in the region where the cutting speed is high can be avoided, and a good electrode pattern can be obtained.

In the above-described embodiment, the example in which the display anode and the auxiliary anode are formed on the rear substrate has been described, but the present invention can also be applied to the case where the cathode is formed on the rear substrate to form a predetermined partition wall.

[0046]

As is apparent from the above description, according to the pattern forming method of the present invention, a region having a low cutting speed by sandblasting has a sandblasting resistance property in advance and a region having a high cutting speed is used. Since the auxiliary mask whose film thickness is adjusted is used for the excessive cutting and the uncutting in the slow cutting speed area, the cutting in the high cutting speed area and the slow cutting speed area can be finished at the same time. Therefore, a recess (damage) or an uncut portion due to excessive cutting does not occur in the layer pattern to be processed, and the pattern can be formed favorably. Therefore, when the panel is formed by using the back substrate panel of the present invention, excellent panel characteristics without erroneous discharge or discharge leakage can be obtained.

[Brief description of drawings]

FIG. 1 is a plan view provided for explaining a structure of a rear substrate panel of the present invention.

2A to 2C are process drawings for explaining a process of forming a partition wall.

FIGS. 3A to 3D are process diagrams for explaining a process subsequent to FIG. 2;

FIG. 4 is a plan view provided for explaining the structure in FIG. 3B.

5A to 5D are process charts provided for explaining a process of forming an electrode.

6A to 6C are process drawings provided for explaining a conventional process of forming a partition wall.

7A to 7C are process drawings provided for explaining a process of forming partition walls following FIG.

[Explanation of symbols]

 10: Back substrate 11: Underlayer 12: Display anode 14: Auxiliary anode 16, 23: Auxiliary mask 17: Display cell 18: Dielectric layer 18a: High cutting speed region 18b: Low cutting speed region 19: Auxiliary cell 20: Anti-sandblast mask 21: Partition 21a: Partition parallel to display anode 21b: Partition orthogonal to display anode 22, 22a, 22b: Phosphor

Claims (3)

[Claims] 1. When cutting different regions of a layer to be processed by the same sandblasting process to form a pattern of the layer to be processed, the region having a slow cutting speed by the sandblasting has a sandblasting resistance property in advance. And an auxiliary mask whose film thickness is adjusted so as to prevent excessive cutting in a high cutting speed region and uncutting in the low cutting speed region, and a low cutting speed region and a high cutting speed region. A pattern forming method, characterized in that cutting on an area is finished at the same time. 2. A step of (a) forming an auxiliary mask on a base in cutting different regions of a layer to be processed by the same sandblasting process to form a pattern of the layer to be processed,
(B) forming a layer to be processed on the surface of a base including the auxiliary mask; and (c) separating the opposing mask on both sides of the auxiliary mask with the opposing auxiliary mask interposed therebetween. A step of forming anti-sandblast masks at predetermined intervals at the predetermined positions, and (d) a layer pattern to be processed by cutting the exposed portion of the to-be-processed layer other than the anti-sandblast mask using a sandblasting method. And a step (e) of removing the sandblast resistant mask and the auxiliary mask remaining on the layer to be processed. 3. The pattern forming method according to claim 2, wherein the base has a structure in which a display anode and an auxiliary anode are arranged in parallel and spaced from each other on a substrate, and the auxiliary mask is formed on an upper surface of the auxiliary anode. A method of forming a pattern, comprising: