JPH0989930A - Contact for electronic equipment and its manufacture - Google Patents
Contact for electronic equipment and its manufactureInfo
- Publication number
- JPH0989930A JPH0989930A JP27487595A JP27487595A JPH0989930A JP H0989930 A JPH0989930 A JP H0989930A JP 27487595 A JP27487595 A JP 27487595A JP 27487595 A JP27487595 A JP 27487595A JP H0989930 A JPH0989930 A JP H0989930A
- Authority
- JP
- Japan
- Prior art keywords
- clad
- coating
- diamond
- needle
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は例えばIC・LSI
チップの導通テスト用探触子、チップとテスタを媒介す
るコンタクト治具などとして用いられる電子機器用接触
子に関する。TECHNICAL FIELD The present invention relates to an IC / LSI, for example.
The present invention relates to a probe for a continuity test of a chip, a contact for electronic equipment used as a contact jig for mediating a chip and a tester.
【0002】[0002]
【従来の技術】図4は、W製のブローブピン1の1例を
示すもので、ピン先端面径Aは50μm、研磨した先細部
Bは3000μm、曲げ角Cは 103°、ピン直径Dは 250μ
mに形成されている。2. Description of the Related Art FIG. 4 shows an example of a W-made probe pin 1 having a pin tip surface diameter A of 50 μm, a polished tapered portion B of 3000 μm, a bending angle C of 103 °, and a pin diameter D of 250 μm.
m.
【0003】図5Aは、上記ブローブピン1による導通
テストの1例を示すもので、エポキシプローブカード基
盤2に取り付けられたブローブピン1の先端部Aは、L
SIダイ3上に設けられた多数のボンディングパッド4
に接触し、電極表面の酸化被膜を破って導通する。この
酸化被膜を破るため、ブローブピン1は、その先端部A
が接触したまゝ図5Bの矢印のように相対的に移動させ
られる。FIG. 5A shows an example of the continuity test using the probe pin 1. The tip portion A of the probe pin 1 attached to the epoxy probe card substrate 2 is L.
Many bonding pads 4 provided on the SI die 3
, And breaks the oxide film on the electrode surface to conduct electricity. In order to break this oxide film, the probe pin 1 has a tip A
Until they come into contact with each other, they are relatively moved as shown by the arrow in FIG. 5B.
【0004】この接触、移動、離脱のタッチタダウンは
繰返し行われ、先端部Aへのアルミニウム屑の付着や先
端部Aの摩捐により、安定したブロービングが得られな
いと言う問題がある。Touch-down such as contact, movement, and detachment is repeatedly performed, and there is a problem that stable brobbing cannot be obtained due to adhesion of aluminum chips to the tip portion A and abrasion of the tip portion A.
【0005】[0005]
【発明が解決しようとする課題】上記問題は、LSIの
高集積化、パッケージの短小軽薄化に伴いピン数が増
し、ボンディングパッドピッチが小さくなるので更に切
実となっている。摩捐を防ぐため、ピン先端にダイヤモ
ンド微粒をNiめっきで付着することや、ピン型によら
ないコンタクト方法も考えられているが、末だ充分とは
言えず、安定して長寿命の接触子が求められている。The above problem is further urgent because the number of pins is increased and the bonding pad pitch is reduced in accordance with the high integration of the LSI and the reduction in size and weight of the package. In order to prevent abrasion, it is considered that diamond fine particles are attached to the tip of the pin by Ni plating, or a contact method that does not rely on the pin type is considered, but this is not enough at the end, and it is a stable and long-life contactor. Is required.
【0006】[0006]
【課題を解決するための手段】本発明は前記従来のピン
型のブロービングにおいても、ピン型以外の突出した接
触部を有する接触子においても、所要の強度を有する材
料であって、且つ気相合成法によりダイヤモンドの被覆
の可能なものを選択し、試作の結果到達したもので、以
下の特徴を備えてなるものである。The present invention is a material having a required strength both in the conventional pin type brobbing and in the contactor having a protruding contact portion other than the pin type, and It has been reached as a result of trial production by selecting a material that can be coated with diamond by the phase synthesis method, and has the following features.
【0007】Va族またはV1a族の単金属もしくはこ
れらの合金よりなる針状あるいは板状などの基体の、少
なくとも接触部に、気相合成法によるダイヤモンドの被
覆を設け、かつその被覆の外表面に金属被覆を施してな
る接触子である。At least a contact portion of a needle-shaped or plate-shaped substrate made of a Va or V1a single metal or an alloy thereof is provided with a diamond coating by a vapor phase synthesis method, and the outer surface of the coating is provided. It is a contactor provided with a metal coating.
【0008】上記ダイヤモンドの被覆を密実とせず、外
表面上の金属被覆の1部が直接基体に接着した構成とす
ることも別の特徴の1つである。Another feature is that the diamond coating is not made solid and a part of the metal coating on the outer surface is directly adhered to the substrate.
【0009】基体は針状で、プローブカードピンとして
用いられることも特徴の1つである。One of the features is that the base is needle-shaped and is used as a probe card pin.
【0010】更に今1つの特徴は、上記のような接触子
を製造する方法として、基体をマイクロ波CVD装置に
装入してダイヤモンド被覆を施す工程と、該ダイヤモン
ド被覆外面上に、金属めっきを施す工程とを具備するこ
とである。Still another feature is, as a method of manufacturing the above-mentioned contactor, a step of charging a substrate into a microwave CVD apparatus to apply a diamond coating, and a metal plating on the outer surface of the diamond coating. And the step of applying.
【0011】[0011]
【実施例】図1はW線を切断加工して製作したW針状体
5の側面図で、Dは直径、Lは長さ、Bは先細の先端部
長さ、θは先端角、Aは先端面直径である。7は、後述
する気相合成法によって形成されたダイヤモンド被覆6
の上に、無電解めっきにより被着したNiの被覆であ
る。EXAMPLE FIG. 1 is a side view of a W needle-shaped body 5 produced by cutting a W line. D is a diameter, L is a length, B is a tapered tip portion length, θ is a tip angle, and A is a tip angle. It is the tip surface diameter. 7 is a diamond coating 6 formed by the vapor phase synthesis method described later.
Is a Ni coating deposited by electroless plating.
【0012】W針状体5の各部の寸法は表1に示すとお
りで、直径0.25mmの純度 100%に近いW線を、超音波探
傷器にかけてクラックのないことを確かめた後、切断、
先端加工を施して作製した。The dimensions of each part of the W needle-shaped body 5 are as shown in Table 1. A W wire having a diameter of 0.25 mm and a purity of 100% was applied to an ultrasonic flaw detector to confirm that there were no cracks, and then cut.
It was manufactured by performing tip processing.
【0013】[0013]
【表1】 [Table 1]
【0014】このW針状体5の表面の粗さは 0.2μmR
a程度で、これをよく洗浄して、CVD装置に、装入
し、下記条件でその先端部にダイヤモンド6を被覆し
た。なお装入は、W針状体5の多数を、Si製の穴開き
保持板に先端部を上にして突き差し保持して行った。The surface roughness of this W needle 5 is 0.2 μmR.
At about a, this was thoroughly washed, charged into a CVD apparatus, and its tip was coated with diamond 6 under the following conditions. The charging was performed by inserting a large number of the W needle-shaped bodies 5 into a perforated holding plate made of Si with the tip end facing upward and holding it.
【0015】 使用装置 熱フィラメントCVD装置 マイクロ波CVD装置 (針状体装入本数) 400〜600 本 100本 H2 流量 1000CCM 200CCM CH4 流量 12CCM 2CCM 圧力 100Torr 30Torr 基材温度 900℃ 900℃ 保持時間 7時間 7時間Equipment used Hot filament CVD equipment Microwave CVD equipment (the number of needles charged) 400 to 600 100 H 2 flow rate 1000 CCM 200 CCM CH 4 flow rate 12 CCM 2 CCM pressure 100 Torr 30 Torr substrate temperature 900 ° C. 900 ° C. holding time 7 Time 7 hours
【0016】形成されたダイヤモンド被覆6の厚みは3
〜10μmで、図2Aに先端の側断面を拡大して示すよう
に、その外表面上にNi被覆7を無電解めっきにより3
〜5μm厚さに設けた。The diamond coating 6 thus formed has a thickness of 3
˜10 μm, a Ni coating 7 is formed on the outer surface by electroless plating as shown in FIG.
˜5 μm thick.
【0017】かく形成された被覆針状体5は、図4に示
すプローブカードピンと同形状に折曲げ加工を施して用
いられる。図2Bは使用によりNi被覆7の先端面が摩
捐し、ダイヤモンド被覆6が露出した状態を示してい
る。この形となっても露出面で充分酸化被膜を破ること
ができ、導通は側面部分のNi被覆7によって行うこと
ができる。しかも露出面はアルミニウム屑などが付着し
にくく、硬く耐摩性に秀れているので、長寿命でしかも
安定したブロービングを行うことができる。The coated needle-shaped body 5 thus formed is used after being bent into the same shape as the probe card pin shown in FIG. FIG. 2B shows a state in which the tip surface of the Ni coating 7 is worn and the diamond coating 6 is exposed by use. Even in this shape, the oxide film can be sufficiently broken on the exposed surface, and conduction can be performed by the Ni coating 7 on the side surface portion. Moreover, the exposed surface is hard to be attached with aluminum scraps and is hard and has excellent abrasion resistance, so that long-life and stable blobbing can be performed.
【0018】図3Aは、ダイヤモンド被覆6の形成を、
初期核形成の段階に止め、被覆を密実にせずダイヤモン
ド微粒間に3μm程度の隙間を残し、その上にNi被覆
7を施したものである。従ってNi被覆7は部分的にW
針状体5に直接付着している。FIG. 3A shows the formation of the diamond coating 6.
The coating is not made solid at the stage of initial nucleation, a gap of about 3 μm is left between fine diamond particles, and a Ni coating 7 is applied thereon. Therefore, the Ni coating 7 is partially W
It is directly attached to the needle-shaped body 5.
【0019】図3Bは、図2Bと同様に使用し、摩捐し
た状態を示すもので、ダイヤモンド微粒とNi被覆の共
存により、耐摩耗性が保たれ、導通もよいと言う特長を
有する。FIG. 3B shows a state in which it is used and worn similarly to FIG. 2B, and it has the features that abrasion resistance is maintained and conductivity is good due to the coexistence of fine diamond particles and Ni coating.
【0020】W針状体は充分な強度を持ち、またその表
面が清浄であれば、格別表面処理を施さなくても、気相
合成法によりダイヤモンドの被覆は容易である。しかも
形成された被覆は強固に付着され、Wの強度とダイヤモ
ンド被覆の耐摩耗性により、変形、欠捐を生せず、Ni
被覆により所要の導通が得られる。The W needles have sufficient strength, and if the surface is clean, the diamond can be easily coated by the vapor phase synthesis method without any special surface treatment. Moreover, the formed coating adheres firmly, and due to the strength of W and the wear resistance of the diamond coating, it does not cause deformation or damage,
The coating provides the required conduction.
【0021】この効果は、表2に示すようにWと同種の
高融点金属であるMo、CrのVa族並びにVIa族の
Ta、Nb、Vにおいても期待できるので、必要によっ
てはWに替え、このVa族、VIa族の他の金属ないし
はその合金を用いることができる。As shown in Table 2, this effect can be expected also in high melting point metals of the same kind as W, such as Mo and Cr in the Va group and in the VIa groups of Ta, Nb, and V. The other metals of the Va group and the VIa group or alloys thereof can be used.
【0022】[0022]
【表2】 [Table 2]
【0023】また被覆金属はNiの実施例を示したが、
導電性を保つために施したものであるから、更に導通性
のよいTi−Pt−AuやTiなど、他の金属を用いる
ことができ、被覆法もそれに応じて選ぶことができる。
試作の段階においては、微細なダイヤモンド被覆を得る
には、熱フィラメント法よりマイクロ波法による方が適
しているようであった。なお、ダイヤモンドにはダイヤ
モンド状炭素が含まれてもよい。Although the coating metal is Ni in the embodiment,
Since it is applied to maintain conductivity, other metals such as Ti-Pt-Au and Ti, which have better conductivity, can be used, and the coating method can be selected accordingly.
At the trial production stage, the microwave method seemed to be more suitable than the hot filament method for obtaining a fine diamond coating. Note that diamond-like carbon may be included in diamond.
【0024】[0024]
【発明の効果】本発明によれば、耐用寿命が長く安定し
たプロービングの出来る接触子を容易に提供することが
できる。According to the present invention, it is possible to easily provide a contactor having a long service life and stable probing.
【図1】実施例のW針状体の形状、寸法を示す側面図で
ある。FIG. 1 is a side view showing the shape and dimensions of a W needle-shaped body of an example.
【図2】Aは図1の先端部の側断面の拡大図、BはAの
先端が摩捐した状態を説明する図面である。2A is an enlarged view of a side cross-section of the tip end portion of FIG. 1, and FIG. 2B is a drawing explaining a state in which the tip end portion of A is worn.
【図3】Aは図2とは別の実施例の先端部の側断面の拡
大図、BはAの先端が摩捐した状態を説明する図面であ
る。FIG. 3A is an enlarged view of a side cross section of a tip end portion of an embodiment different from FIG. 2, and FIG.
【図4】従来のプローブカードピンの1例を説明する側
面図である。FIG. 4 is a side view illustrating an example of a conventional probe card pin.
【図5】Aは図4のピンによる導通テストの1例を説明
する概略図、Bはその部分拡大図である。5A is a schematic diagram illustrating an example of a continuity test using the pins of FIG. 4, and B is a partially enlarged view thereof.
1 プローブカードピン 2 エポキシプローブカード基盤 3 LSIダイ 4 ボンデイングパッド 5 W針状体 6 ダイヤモンド被覆 7 Ni被覆 A W針状体の先端面直径(プローブカードピンの先端
面直径) B W針状体の先細部長さ C プローブカードピンの曲げ角度 D W針状体の直径(プローブカードピンの直径) L W針状体の長さ1 Probe card pin 2 Epoxy probe card substrate 3 LSI die 4 Bonding pad 5 W needle-shaped body 6 Diamond coating 7 Ni coating A W Tip surface diameter of needle-shaped body (tip surface diameter of probe card pin) B W Needle-shaped body Tapered length C Bend angle of probe card pin D W Needle diameter (diameter of probe card pin) L W Needle length
Claims (4)
これらの合金よりなる基体の、少なくとも接触部が、気
相合成法によるダイヤモンドによって被覆され、かつ該
被覆の外表面には金属被覆が施されてなることを特徴と
する電子機器用接触子。1. A substrate made of a Va or VIa single metal or an alloy thereof, at least a contact portion is coated with diamond by a vapor phase synthesis method, and an outer surface of the coating is provided with a metal coating. A contactor for electronic equipment, which is characterized in that
覆の外表面に施した金属被覆は、部分的に直接基体に接
着していることを特徴とする請求項1記載の接触子。2. The contact according to claim 1, wherein the diamond coating is not solid and the metal coating on the outer surface of the coating is partially adhered directly to the substrate.
1又は2記載の接触子。3. The contactor according to claim 1, wherein the substrate is a probe card pin.
ダイヤモンド被覆を施す工程と、該ダイヤモンド被覆外
表面上に、金属めっきを施す工程とを具備することを特
徴とする請求項1,2又は3記載の接触子の製造方法。4. The method according to claim 1, further comprising a step of loading the substrate into a microwave CVD apparatus to apply a diamond coating, and a step of applying a metal plating to the outer surface of the diamond coating. Or the method of manufacturing the contactor according to 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27487595A JPH0989930A (en) | 1995-09-27 | 1995-09-27 | Contact for electronic equipment and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27487595A JPH0989930A (en) | 1995-09-27 | 1995-09-27 | Contact for electronic equipment and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0989930A true JPH0989930A (en) | 1997-04-04 |
Family
ID=17547776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27487595A Pending JPH0989930A (en) | 1995-09-27 | 1995-09-27 | Contact for electronic equipment and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0989930A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008128650A (en) * | 2006-11-16 | 2008-06-05 | Kyushu Institute Of Technology | Contact for probe card, and method of producing the same |
JPWO2006064546A1 (en) * | 2004-12-14 | 2008-06-12 | 株式会社アドバンテスト | Contact pin, probe card and electronic component testing apparatus using the same |
JP2008249449A (en) * | 2007-03-30 | 2008-10-16 | Kanai Hiroaki | Probe needle and its manufacturing method |
WO2014010373A1 (en) * | 2012-07-12 | 2014-01-16 | 日産自動車株式会社 | Electrical contact structure and electric motor |
-
1995
- 1995-09-27 JP JP27487595A patent/JPH0989930A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2006064546A1 (en) * | 2004-12-14 | 2008-06-12 | 株式会社アドバンテスト | Contact pin, probe card and electronic component testing apparatus using the same |
US7667471B2 (en) | 2004-12-14 | 2010-02-23 | Advantest Corporation | Contact pin probe card and electronic device test apparatus using same |
JP2008128650A (en) * | 2006-11-16 | 2008-06-05 | Kyushu Institute Of Technology | Contact for probe card, and method of producing the same |
JP2008249449A (en) * | 2007-03-30 | 2008-10-16 | Kanai Hiroaki | Probe needle and its manufacturing method |
WO2014010373A1 (en) * | 2012-07-12 | 2014-01-16 | 日産自動車株式会社 | Electrical contact structure and electric motor |
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