JPH0989462A - Heating furnace - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable control of the temperatures of heater blocks as prescribed without allowing the temperatures to be affected by the surroundings where a heating furnace is placed by making a gas flow from the side of low- temperature heating means to that of hightemperature heating means in a side- by-side arrangement of a plurality of heating means. SOLUTION: A gas outlet 10 is provided at the inlet (inlet to furnace for members to be heated) of a thermosetting furnace and by feeding into the furnace through the gas outlet 10 nitrogen gas, dry air, etc., warmed separately by an air heater, etc., a flow of gas is produced from the inlet of the furnace toward its outlet inside the furnace. At the preliminary heating by heater blocks HB1, HB2 a die bonding paste is held in a state of low viscosity preceding the setting and also made even state by vaporization of diluent. By main thermosetting at heater blocks HB4, HB5, HB6 a thermosetting reaction involving no foaming can be achieved. At a heater block HB3 the heater blocks HB2, HB4 do not interfere with each other so that adequate preliminary heating can be secured.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heating furnace, and more particularly to a thermosetting furnace for die bond paste for bonding semiconductor chips.

[0002]

2. Description of the Related Art A conventional heating furnace will be described below with reference to a die-curing paste thermosetting furnace for bonding semiconductor chips.

In recent years, there has been a need for value engineering by improving efficiency in mounting, shortening work steps, and saving labor. For example, in a die bonding process and a wire bonding process in a semiconductor device, the die bonding paste is improved by improving the die bonding paste. It is possible to cure for a long time, and by doing so, an in-line system has been constructed in which a die-curing paste thermosetting furnace is connected, and the die-bonding process and the wire-bonding process are performed continuously. The line has been built.

As shown in FIG. 10, the heat curing furnace comprises a plurality of heater blocks HB1 to HB6, a plurality of carrier wires 1 and a protector 2.

The heater blocks HB1 to HB6 are
The heater blocks HB1 to HB6 are arranged side by side at a predetermined interval (2 mm), and the heater blocks HB1 to HB6 are set to a predetermined temperature and directly heat the lead frame on which the semiconductor chip is mounted via the die bond paste.

The carrying wire 1 is for carrying the lead frame sequentially to the heater blocks HB1 to HB6, and is arranged in the grooves formed in the heater blocks HB1 to HB6, as shown in FIG. Then, the lead frame 3 is sequentially transported from the heater block HB1 to the heater block HB6 by repeating the ascending, the right moving, the descending and the left moving.

The protector 2 protects the lead frame 3 during the curing of the die bond paste, and also enhances the thermal efficiency and prevents the oxidation of the lead frame 3 and the semiconductor chip mounted thereon and the gas generated during the curing of the die bond paste. Nitrogen (N ₂ ) gas or dry air that has been separately warmed by an air heater or the like for exhausting is supplied to each heater block HB1 to HB6, and exhaust for forcibly exhausting through each heater block. It is provided with means 2b.

As shown in FIGS. 12A and 12B, in the lead frame 3 conveyed to the above-mentioned heat curing furnace, the semiconductor chip 4 is placed at a predetermined position of the header portion of the lead frame 3 via the die bond paste 5. The die bond paste 5 is mounted on the heater block HB1.
~ HB6 heat-cures by heating, so that the semiconductor chip 4 is fixed to the lead frame 3. In the figure,
Reference numeral 6 is an upper surface electrode of the semiconductor chip, 7 is an external connection lead, and 8 is a gold wire for electrically connecting the upper surface electrode 6 and the external connection lead 7.

As shown in FIG. 13, the conventional in-line die bond paste 5 has a curing temperature profile in which it is heated to 140.degree.
It is carried out by heating to 00 ° C. Along with this, in the above-described thermosetting furnace, the heater blocks HB1 to HB3 are set to 140 ° C. and the heater blocks HB4 to HB6 are set to 200 ° C.
Is set to

[0010]

By the way, when the semiconductor chip 4 is, for example, a light emitting diode chip, the die bond paste 5 is composed of a conductive die bond paste in which a conductive filler such as silver flakes is added to an epoxy resin, The semiconductor chip fixing portion made of the conductive die bond paste 5 has strong adhesiveness, good electrical conductivity for making contact with the chip back surface electrode, and the amount of power generated by the light emitting diode chip 4 during energization.
Good thermal resistance to radiate heat is required. That is, a good and stable die bond state is required.

This die-bonded state can be evaluated by a certain thermal resistance parameter [ΔV]. This method
For example, a method of measuring an electrical parameter (forward voltage) that linearly changes with respect to the junction temperature of the light emitting diode chip before and after applying heat to the light emitting diode chip before and after determining the die bond state based on the change in the value. Is.

FIG. 14 shows a standard measurement waveform. First,
The current I _M is applied for a time t ₁ and the voltage V ₁ is measured. Next, as a heating current, a current I _H of several tens to several hundreds times I _M is applied for a time t _H to heat. Then, the same current I _M and the initial current time t ₂ is applied again to measure the voltage V _2.
At this time, the quality of the semiconductor chip fixing portion is determined by the difference ΔV between the voltages V ₁ and V ₂ before and after heating.

The heat generated in the light emitting diode chip 4 by the current I _H in a short time is mainly transferred to the lead frame 3 through the die bond portion and radiated as shown by the arrow in FIG. It can be determined that the smaller the size, the better the state of die bonding. For example, the current I _M is 1 mA, the current I _H is 800 mA, and the times t ₁ and t _{2 are}
Of 8 msec and t _H of 20 msec, V before and after heating
₁ and V ₂ are measured, and the difference ΔV [mV] is obtained.

In this case, if the parameter ΔV (hereinafter simply referred to as “ΔV”) of the thermal resistance is 70 or less, it indicates that the state of the semiconductor chip fixing portion by the die bond paste 5 is good.

However, in the curing temperature profile shown in FIG. 13, ΔV has the distribution shown in FIG. The distribution of ΔV is often 70 or more, and it can be seen that the state of the semiconductor chip fixing portion by the die bond paste is not good.

This is because the die bond paste 5 was suddenly heated to the thermosetting reaction start temperature.
As a result, when the diluent generally contained in the die bond paste evaporates, it is likely to be trapped in the die bond paste, and as a result, it causes bubbles and adversely affects as described later. The diluent is used for adjusting the viscosity of the resin, and is generally contained in a general die bond paste.

Also, it has been found that the adhesiveness and electrical conductivity are not as good as the thermal resistance.

FIG. 16 shows an observation example in which the AA ′ cross section of FIG. 12A is cut in the semiconductor chip fixing portion by the die bond paste 5 having the distribution of ΔV of 70 or more. It has been confirmed that bubbles 9 are generated in FIG. The generation of the bubbles 9 adversely affects the adhesiveness and the electrical conductivity as well as the thermal resistance.

In order to solve the above-mentioned problems, for example, the applicant of the present invention has filed Japanese Patent Application No. 06-060547 (Heisei 06).
There is a method of manufacturing a semiconductor device (hereinafter referred to as “proposed example”) proposed in Mar. 30, 2013).

The curing temperature profile of the die bond paste according to the proposed example has a lower limit of the temperature at which the diluent of the die bond paste 5 starts to evaporate, and the die bond paste 5
After preheating at a temperature lower than the thermosetting reaction starting temperature of No. 1, heating at the thermosetting reaction starting temperature or more, that is, as shown in FIG. After that, the main curing is performed by heating at 200 ° C.

The temperature of the preheating is set by thermogravimetric measurement-differential thermal analysis (T) of the die bond paste shown in FIG.
G-DTA thermal analysis) data will be specifically described.
In the figure, the positive side of the DTA curve indicates an exothermic reaction, and the negative side indicates an endothermic reaction.

According to FIG. 18, the evaporation start temperature of the diluent,
That is, the temperature at which the weight (TG curve) begins to decrease is 60 ° C., and the thermosetting reaction start temperature of the die bond paste, that is, the temperature at which the exothermic reaction starts is 100 ° C.

From this content, the preheating temperature is set to 60
It is desirable that the temperature is in the range of 80 ° C to 80 ° C and the holding time is 20 seconds or more. This is because if the temperature is lower than 60 ° C, the diluent does not evaporate, and if the temperature exceeds 80 ° C, the curing reaction may occur closer to the thermosetting reaction initiation temperature when the holding time is taken.

As a result, the distribution of ΔV becomes 70 or less as shown in FIG. 19, which shows that the state of the semiconductor chip fixing portion by the die bond paste 5 is good.

Further, FIG. 20 shows an observation example in which the AA ′ cross section of FIG. 12 (a) is cut in the semiconductor chip fixing portion, and there are no bubbles in the die bond paste 5 and the thermal resistance is It is good. Also, the adhesiveness and electrical conductivity are as good as the improved thermal resistance.

However, in order to obtain the curing temperature profile shown in FIG. 17, the transfer cycle time of the heat curing furnace is 20 seconds and the temperature of the heater blocks HB1 to HB6 is H.
B1, HB2 is 70 ℃, HB3 is 140 ℃, HB4, H
When B5 and HB6 are set to 200 ° C., the actual curing temperature profile tends to shift HB2 and HB3 to the high temperature side as shown in FIG. For example, H
B2 may exceed 80 ° C.

This is the heater block HB2 and HB
3 is heated by the adjacent heater blocks HB3 and HB4. Especially, the heater block HB
If an object is arranged above the supply means 2a above 1 to HB6, the atmosphere immediately above the heater blocks HB1 to HB6 is hard to be cooled, and the supply means 2 is also provided.
This is because heat reflection by an object such as “a” is also added, and it is affected by the adjacent heater block.

Further, the environmental conditions in which the heat curing furnace is installed, particularly the influence of the air flow from an air conditioner or the like, has a great influence. That is, when air flows from the heater block HB6 side to the heater block HB1 side, the heater block HB6
2 and HB3 are heated by the heater blocks HB3 and HB4.

As a result, the curing reaction starts without securing the preheating time of 60 to 80 ° C., and therefore the distribution of ΔV is shown in FIG.
As shown in FIG. 2, more than 70 were generated, and the good and stable die bond state that should be obtained was not obtained.

In view of the above problems, the present invention is a heating system capable of setting the temperature of the heater block as set, without being affected by the state of the environment in which the heating furnace (thermosetting furnace) is installed. The purpose is to provide a furnace.

[0031]

A heating furnace according to claim 1 of the present invention comprises a plurality of heating means for heating a member to be heated at different temperatures, and a conveying means for conveying the member to be heated to each of the heating means. A heating furnace in which the plurality of heating means are juxtaposed in close proximity to each other, and a flow means for flowing a gas from the low temperature heating means side of the plurality of heating means to the high temperature heating means side is provided. It is characterized by

The heating furnace according to claim 2 of the present invention is
It is characterized in that the flow means comprises a first gas outlet provided at at least one of a furnace inlet and a furnace outlet of the member to be heated.

Further, in the heating furnace according to claim 3 of the present invention, the fluidizing means is provided above the heating means, and is inclined from the low temperature heating means side of the plurality of heating means to the high temperature heating means side. It is characterized by comprising the above-mentioned second gas outlet.

In addition, in the heating furnace according to claim 4 of the present invention, a plurality of heating means for heating the lead frame mounted with the semiconductor chip via the adhesive containing the diluent at different temperatures, and the lead. A diluent for the adhesive in a heating furnace comprising: a transporting unit that sequentially transports a frame from a low-temperature heating unit to a high-temperature heating unit, wherein the plurality of heating units are juxtaposed side by side in the order of low-temperature to high-temperature. Has a lower limit of the temperature at which the vaporization starts and is preheated at a temperature lower than the thermosetting reaction start temperature of the adhesive, second heating means for heating at the thermosetting start temperature or higher, and A third heating means for heating at a temperature substantially intermediate between the temperature of the first heating means and the temperature of the second heating means;
And a flow means for flowing the gas from the heating means side to the third heating means side.

According to the above construction, the heating furnace according to the first to third aspects of the present invention is a flow means for flowing the gas from the low temperature heating means side of the plurality of heating means to the high temperature heating means side, that is, A first gas outlet provided at at least one of a furnace inlet and a furnace outlet of a member to be heated or a heating means provided above the heating means and having a high temperature from a low temperature heating means side of the plurality of heating means. Since the second gas outlets inclined to the side are provided, the low-temperature heating means of the heating means that are close to each other is installed in the heating furnace by the first or second gas outlets. It is possible to prevent the temperature from increasing due to the influence of the high-temperature heating means without depending on the environmental condition.

The heating furnace according to claim 4 of the present invention is
First heating means for preheating at a temperature lower than the temperature at which the adhesive diluent starts to evaporate and lower than the thermosetting reaction initiation temperature of the adhesive, and second heating for heating at the thermosetting initiation temperature or higher. Means, the temperature of the first heating means and the second
The third heating means for heating at a temperature substantially intermediate to the temperature of the heating means, and the flow means for flowing the gas from the first heating means side to the third heating means side are provided.
Of the first and third heating means that are close to each other by the flow means, the first low-temperature heating means that is close to the high-temperature third heating means that is close to each other without being influenced by the environmental conditions in which the heating furnace is installed. The temperature of the first heating means is less likely to increase due to the influence of the heating means, and the first heating means can be stably set to a temperature lower than the temperature at which the diluent starts to evaporate and lower than the thermosetting reaction start temperature of the adhesive. it can. As a result, the adhesive is kept in a low-viscosity state before curing by the preheating by the first heating means, and the diluent is evaporated to be in a uniform state, and the main curing is performed by the second heating means. It is possible to provide a heating furnace capable of obtaining a curing reaction without generation of bubbles. Further, the third heating means prevents the first heating means and the second heating means from interfering with each other, and sufficient preheating can be ensured.

[0037]

BEST MODE FOR CARRYING OUT THE INVENTION A heating furnace according to the first embodiment of the present invention, that is, a thermosetting furnace will be described below. Regarding the heat curing furnace, the same components as those of the conventional heat curing furnace shown in FIG. 10 are designated by the same reference numerals, and only different points will be described.

FIG. 1 is a sectional view showing a thermosetting furnace according to the first embodiment.

The thermosetting furnace is the same as the conventional thermosetting furnace shown in FIG. 10, except that a gas outlet 10 is provided at the entrance of the furnace (the entrance of the heated member). As a result, nitrogen (N ₂ ) gas or dry air separately warmed by an air heater or the like is supplied into the furnace through the gas outlet 10.
A gas flow is provided in the furnace from the furnace inlet to the furnace outlet.

FIG. 2 is a sectional view showing a heat curing furnace according to another embodiment.

This heat curing furnace is different from the conventional heat curing furnace shown in FIG. 10 in place of the gas outlets provided in the supply means 2a of the protective body 2 and provided in the direction perpendicular to the heater blocks HB1 to HB6. The heater block HB6 is provided with a gas outlet 11 that is inclined at a constant angle. Thereby, similar to the above, the gas outlet 11
Nitrogen (N
₂ ) Gas and dry air are supplied into the furnace so that the inside of the furnace has a gas flow from the furnace inlet to the furnace outlet.

In FIGS. 1 and 2, the cycle time of carrying the carrying wire 1 is set to 20 for the purpose of obtaining the curing temperature profile of the Dunbond paste shown in FIG.
Seconds, and set the temperature of the heater blocks HB1 to HB6 to HB
1, HB2 70 ℃, HB3 140 ℃, HB4, HB
By setting HB6 and HB6 to 200 ° C., the desired curing temperature as shown in FIG. 3 can be obtained without being affected by the influence of the adjacent high temperature heater block and the state of the environment where the heat curing furnace is installed. The profile can be obtained.

Here, the sum of the gas supply from the gas outlet 10 or the gas supply from the plurality of gas outlets 11 is
Supply 5 to 20 liters per minute. That is, if it is less than 5 liters, the heater blocks HB2 and HB3 are warmed by HB3 and HB4, respectively, and the temperature rises due to the environmental conditions in which the thermosetting furnace is installed. At that time (particularly when the carrier wire 1 is moved to the right), the lead frame 3 is cooled by the gas from the gas outlets 10 and 11, and cannot maintain a predetermined temperature. This is because problems such as delayed reaction occur.

As a result, the heater block HB
1, die bond paste 5 by preheating with HB2
The low viscosity state before curing is ensured and the diluent is evaporated to make a uniform state.
It is possible to provide a heating furnace capable of obtaining a curing reaction without generation of bubbles by the main curing with 4, HB5 and HB6. Further, the heater block HB3 does not interfere with the heater blocks HB2 and HB4, so that preheating can be sufficiently ensured.

Therefore, according to the thermosetting oven, it is possible to obtain a semiconductor chip fixing portion having good thermal resistance, adhesiveness and electrical conductivity.

The amount of gas supplied is set in the case where the height of the transport path of the lead frame 3, that is, the distance between the heater block and the supply means 2a is set to 15 mm and the width of the transport path (in the depth direction) is set to 360 mm. It is needless to say that it is the supply amount and is changed by changing the height and width of the transport path.

As described above, the present embodiment is suitable for the step-up temperature profile.

FIG. 4 is a sectional view showing a thermosetting furnace according to the second embodiment of the present invention.

The thermosetting furnace is the same as the conventional thermosetting furnace shown in FIG. 10, except that a gas outlet 10a is provided at the exit of the furnace (the exit of the heated member). As a result, nitrogen (N ₂ ) gas or dry air that has been separately heated by an air heater or the like is supplied into the furnace through the gas outlet 10a, and a gas flow is provided in the furnace from the furnace outlet toward the furnace inlet. It is a thing.

FIG. 5 is a sectional view showing a thermosetting furnace according to another embodiment.

This heat curing furnace is different from the conventional heat curing furnace shown in FIG. 10 in place of the gas outlets provided in the supply means 2a of the protective body 2 and provided in the direction perpendicular to the heater blocks HB1 to HB6. The heater block HB1 side is provided with a gas outlet 11a inclined at a constant angle. Thereby, similar to the above, the gas outlet 1
Through 1a, nitrogen (N ₂ ) gas or dry air which has been separately heated by an air heater or the like is supplied into the furnace, and a gas flow is provided in the furnace from the furnace outlet to the furnace inlet.

The amount of gas supplied is set in the same manner as in the first embodiment.

The present embodiment is suitable for a step-down temperature profile, and the curing temperature profile as shown in FIG. 6 is changed depending on the influence of the adjacent high temperature heater block and the environment condition in which the heat curing furnace is installed. You can get it without being done.

FIG. 7 is a sectional view showing a thermosetting furnace according to the third embodiment of the present invention.

The heat curing furnace is the same as the conventional heat curing furnace shown in FIG. 10, and gas outlets 10 and 10 are provided at the inlet and outlet of the furnace.
This is a configuration provided with a. As a result, nitrogen (N ₂ ) gas or dry air that has been separately warmed by an air heater or the like is supplied into the furnace through the gas outlets 10 and 10a, and gas is supplied from the furnace inlet and the furnace outlet toward the center of the furnace. It has a flow of.

FIG. 8 is a sectional view showing a thermosetting furnace according to another embodiment.

This heat curing furnace is different from the conventional heat curing furnace shown in FIG. 10 in place of the gas outlets provided in the supply means 2a of the protector 2 and provided in the direction perpendicular to the heater blocks HB1 to HB6. , Heater block HB1 ~ H
A gas outlet 11 that is inclined at a constant angle on the heater block HB6 side is provided above B3, and a heater block HB1 is provided above the heater blocks HB4 to HB6.
This is a configuration in which a gas outlet 11a that is inclined at a constant angle is provided on the side. As a result, similarly to the above, nitrogen (N ₂ ) gas or dry air separately heated by an air heater or the like is supplied into the furnace through the gas outlets 11 and 11a, and the inside of the furnace is directed from the furnace inlet and outlet toward the center of the furnace. It has a gas flow.

The amount of gas supplied is set in the same manner as in the first embodiment.

The present embodiment is suitable for the required temperature profile for both step-up and step-down, and the curing temperature profile as shown in FIG. 9 is set by the influence of the adjacent heater block and the thermal curing furnace. It can be obtained without being influenced by the state of the environment in which it is present.

Further, with the configuration of FIG. 7, the gas outlet 1
By controlling (on / off) the flow rate of 0, 10a, it can be applied to the thermosetting furnace shown in FIG. 1 or the thermosetting furnace shown in FIG.

Since the above-mentioned thermosetting furnace of FIGS. 2, 5 and 8 uses the conventional supplying means in common as a fluidizing means, it separately flows like the thermosetting furnaces of FIGS. 1, 4 and 7. There is also an effect that it is not necessary to provide means.

Further, in the above-mentioned first to third embodiments, the flow means has been described as the first or second gas outlet, but as the flow means, the gas for contacting the heating means is made to flow. Means such as a gas absorption port or a fan may be used.

[0063]

As described above, according to the first aspect of the present invention.
According to the heating furnace of any one of claims 1 to 3, the flow means for flowing the gas from the low temperature heating means side of the plurality of heating means to the high temperature heating means side, that is, at least one of the furnace inlet and the furnace outlet of the heated member. A first gas outlet provided or a second gas outlet provided above the heating means and inclined from the low temperature heating means side to the high temperature heating means side of the plurality of heating means is provided. With this configuration, the low-temperature heating means of the heating means that are close to each other are brought close to each other by the first or second gas outlet without being influenced by the state of the environment in which the heating furnace is installed. It is possible to prevent the temperature from increasing due to the influence of the high-temperature heating means. Therefore, it becomes possible to bring each heating means to a temperature as set.

The heating furnace according to claim 4 of the present invention is
First heating means for preheating at a temperature lower than the temperature at which the adhesive diluent starts to evaporate and lower than the thermosetting reaction initiation temperature of the adhesive, and second heating for heating at the thermosetting initiation temperature or higher. Means, the temperature of the first heating means and the second
The third heating means for heating at a temperature substantially intermediate to the temperature of the heating means, and the flow means for flowing the gas from the first heating means side to the third heating means side are provided.
Of the first and third heating means that are close to each other by the flow means, the first low-temperature heating means that is close to the high-temperature third heating means that is close to each other without being influenced by the environmental conditions in which the heating furnace is installed. The temperature of the first heating means is less likely to increase due to the influence of the heating means, and the first heating means can be stably set to a temperature lower than the temperature at which the diluent starts to evaporate and lower than the thermosetting reaction start temperature of the adhesive. it can. As a result, the adhesive is kept in a low viscosity state before curing by the preheating by the first heating means and the diluent is evaporated to be in a uniform state, and the main curing is performed by the second heating means. It is possible to provide a heating furnace capable of obtaining a curing reaction without generation of bubbles. Further, the third heating means prevents the first heating means and the second heating means from interfering with each other, and sufficient preheating can be ensured. Therefore, it is possible to obtain a semiconductor chip fixing portion having good thermal resistance, adhesiveness, and electrical conductivity.

[Brief description of drawings]

FIG. 1 is a sectional view showing a heating furnace according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a heating furnace according to another embodiment.

FIG. 3 is a diagram showing an example of a temperature profile of the heating furnace shown in FIG. 1 or FIG.

FIG. 4 is a sectional view showing a heating furnace according to a second embodiment of the present invention.

FIG. 5 is a sectional view showing a heating furnace according to another embodiment.

6 is a diagram showing an example of a temperature profile of the heating furnace shown in FIG. 4 or FIG.

FIG. 7 is a sectional view showing a heating furnace according to a third embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a heating furnace according to another embodiment.

9 is a diagram showing an example of a temperature profile of the heating furnace shown in FIG. 7 or FIG.

FIG. 10 is a cross-sectional view showing a conventional heating furnace.

FIG. 11 is a diagram for explaining the operation of the conventional heating furnace, in which (a) is a plan view and (b) is a side view.

12A and 12B are diagrams showing a state in which a semiconductor chip is die-bonded onto a lead frame via an adhesive, FIG. 12A is a plan view, and FIG. 12B is a sectional view taken along line AA ′ of FIG. is there.

FIG. 13 is a diagram showing an example of a curing temperature profile of a conventional adhesive.

14A and 14B are diagrams showing standard measurement waveforms of thermal resistance parameters.

15 is a diagram showing a distribution of thermal resistance parameters according to the curing temperature profile of FIG.

16 is a cross-sectional view showing a state of a semiconductor chip fixing portion according to the curing temperature profile of FIG.

FIG. 17 is a diagram showing an example of a curing temperature profile of the adhesive of the proposed example.

FIG. 18 is a view showing thermogravimetric measurement-differential thermal analysis (TG-DTA) data of a conductive adhesive of epoxy resin.

19 is a diagram showing distribution of thermal resistance parameters according to the curing temperature profile of FIG.

20 is a cross-sectional view showing a state of a semiconductor chip fixing portion according to the curing temperature profile of FIG.

FIG. 21 shows the curing temperature profile shown in FIG.
It is a figure which shows the hardening temperature profile when it sets in the heating furnace shown in FIG.

22 is a diagram showing distribution of thermal resistance parameters according to the curing temperature profile of FIG. 21.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Conveying wire (conveying means) 2 Protecting body 2a Supplying means 3a Ejecting means 3 Lead frame (heated member) 4 Semiconductor chip 5 Die bond paste (adhesive) 10,10a First gas outlet (flowing means) 11,11a Second gas outlet (flow means) HB1, HB2 heater block (first heating means) HB3 heater block (third heating means) HB4, HB5, HB6 heater block (second heating means)

Claims (4)

[Claims] 1. A plurality of heating means for heating a member to be heated at different temperatures, and a conveying means for conveying the member to be heated to each of the heating means, wherein the plurality of heating means are juxtaposed in close proximity to each other. A heating furnace comprising: a heating means for flowing a gas from a low temperature heating means side of the plurality of heating means to a high temperature heating means side. 2. The heating furnace according to claim 1, wherein the flowing means comprises a first gas outlet provided at at least one of a furnace inlet and a furnace outlet of the member to be heated. 3. The second flow means comprises a second gas outlet provided above the heating means and inclined from the low temperature heating means side of the plurality of heating means to the high temperature heating means side. The heating furnace according to claim 1, wherein the heating furnace is a heating furnace. 4. A plurality of heating means for heating a lead frame on which a semiconductor chip is mounted via an adhesive containing a diluent at different temperatures, and the lead frame is sequentially heated from a low temperature heating means to a high temperature heating means. In a heating furnace comprising a transporting means for transporting, wherein the plurality of heating means are juxtaposed in close proximity to each other in the order of low temperature to high temperature, the temperature at which the diluent of the adhesive begins to evaporate is set as a lower limit, and A first heating means for preheating at a temperature lower than the thermosetting reaction starting temperature; a second heating means for heating at a temperature not lower than the thermosetting starting temperature; and a temperature of the first heating means and a second heating means. A heating furnace comprising: a third heating means for heating at a temperature substantially intermediate to the temperature; and a flow means for flowing a gas from the first heating means side to the third heating means side.