JPH098379A - Magnetoelectric conversion element - Google Patents
Magnetoelectric conversion elementInfo
- Publication number
- JPH098379A JPH098379A JP7159526A JP15952695A JPH098379A JP H098379 A JPH098379 A JP H098379A JP 7159526 A JP7159526 A JP 7159526A JP 15952695 A JP15952695 A JP 15952695A JP H098379 A JPH098379 A JP H098379A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetoresistive effect
- conversion element
- magnetoelectric conversion
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 32
- 230000000694 effects Effects 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 abstract description 15
- 239000002184 metal Substances 0.000 abstract description 15
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 7
- 229910000679 solder Inorganic materials 0.000 abstract description 7
- 238000000206 photolithography Methods 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 82
- 230000001681 protective effect Effects 0.000 description 9
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 238000000605 extraction Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 239000000696 magnetic material Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910002555 FeNi Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】 外部磁場に対して抵抗値が変化
する性質を応用し、例えば角度センサとして用いられる
磁電変換素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoelectric conversion element which is used as an angle sensor, for example, by applying a property that a resistance value changes with an external magnetic field.
【０００２】[0002]
【従来の技術】 従来の磁電変換素子を図３、４、５を
用いて説明する。図３は従来の磁電変換素子２０の断面
図、図４はその平面図、図５はその製造工程を示す図で
ある。なお図３は、図４のＡ−Ａ線における断面を示
す。2. Description of the Related Art A conventional magnetoelectric conversion element will be described with reference to FIGS. FIG. 3 is a sectional view of the conventional magnetoelectric conversion element 20, FIG. 4 is a plan view thereof, and FIG. 5 is a view showing its manufacturing process. Note that FIG. 3 shows a cross section taken along the line AA of FIG.
【０００３】従来の磁電変換素子２０は、図３に示すよ
うに、磁性体からなる基板１に、引出電極３、３と、短
絡膜５、、、５とが形成された、例えばＩｎＳｂなどの
半導体材料からなる磁気抵抗効果膜２が樹脂層４を介し
て接着され、引出電極３、３に端子７、７が接続され、
磁気抵抗効果膜２に保護膜６が形成された断面構造を有
している。磁気抵抗効果膜２は、図４の平面図に示すよ
うに、ミアンダライン形状を有しており、その折り返し
部分と途中の何箇所には多数個の短絡膜５、、、５が形
成されている。なお、これらの短絡膜５、、、５は磁気
抵抗効果膜２を流れる電流を短絡することにより、磁気
抵抗効果膜２を電気的に他数個に分割し、この分割され
た多数個の磁気抵抗効果膜を、等価的に直列接続するよ
うにはたらく。図３に戻り、短絡膜５、、、５は、磁気
抵抗効果膜２に対する接着強度の高いＴｉからなる金属
膜５ｂと、半田付けが容易なＣｕからなる金属膜５ａと
からなる二層構造をしており、さらに磁気抵抗効果膜２
の両端には短絡膜５、、、５と同一の二層構造を有する
引出電極３、３が形成されている。引出電極３、３に
は、電気信号を入力あるいは出力するために、Ｃｕに半
田が被覆された端子７、７が、熱圧着により接続されて
いる。さらに磁気抵抗効果膜２を保護するとともに端子
７、７の接着強度を向上させるために、保護膜６が磁電
変換素子の上面に、シリカ、アルミナ、窒化ケイ素など
の無機材料を蒸着したり、もしくはエポキシ樹脂などの
有機材料を塗布し固化することにより形成されている。As shown in FIG. 3, a conventional magnetoelectric conversion element 20 has a substrate 1 made of a magnetic material on which lead electrodes 3 and 3 and short-circuit films 5 and 5 are formed, such as InSb. A magnetoresistive film 2 made of a semiconductor material is adhered via a resin layer 4, terminals 7 are connected to the extraction electrodes 3 and 3,
It has a sectional structure in which a protective film 6 is formed on the magnetoresistive film 2. As shown in the plan view of FIG. 4, the magnetoresistive effect film 2 has a meander line shape, and a large number of short-circuit films 5, 5, are formed at the folded-back portion and at some points in the middle. There is. The short-circuit films 5, 5, 5 electrically divide the magnetoresistive effect film 2 into several other parts by short-circuiting the current flowing through the magnetoresistive effect film 2, and the plurality of divided magnetic parts are separated. The resistance effect films are equivalently connected in series. Returning to FIG. 3, the short-circuit films 5, 5, have a two-layer structure composed of a metal film 5b made of Ti having high adhesive strength to the magnetoresistive effect film 2 and a metal film 5a made of Cu which can be easily soldered. In addition, the magnetoresistive effect film 2
Short-circuit films 5, 3, and lead-out electrodes 3, 3 having the same two-layer structure as that of the short-circuit films 5, are formed on both ends of. Terminals 7 and 7 in which Cu is coated with solder are connected to the extraction electrodes 3 and 3 by thermocompression bonding in order to input or output an electric signal. Further, in order to protect the magnetoresistive effect film 2 and improve the adhesive strength of the terminals 7 and 7, the protective film 6 vapor-deposits an inorganic material such as silica, alumina or silicon nitride on the upper surface of the magnetoelectric conversion element, or It is formed by applying an organic material such as an epoxy resin and solidifying it.
【０００４】この従来の磁電変換素子２０の製造方法を
図５を用いて説明する。A method of manufacturing the conventional magnetoelectric conversion element 20 will be described with reference to FIG.
【０００５】まず磁気抵抗効果を有する、例えばＩｎＳ
ｂからなるバルク８を準備する。次に図４（１）に示す
第１工程で、バルク８をエポキシ樹脂などの樹脂層４を
介して基板１に接着する。なおこの基板１には磁電変換
素子２０が多数個形成される。次に図４（２）に示す第
２工程で、研磨により、バルク８をＩｎＳｂ薄膜層２ａ
に形成する。次に図４（３）に示す第３工程で、フォト
リソグラフィ−法およびエッチング法によりＩｎＳｂ薄
膜層２ａをミアンダライン形状の磁気抵抗効果膜２に形
成する。次に図４（４）に示す第４工程で、磁気抵抗効
果膜２の表面に、Ｔｉからなる金属膜５ｂを蒸着法によ
り形成し、続いてＣｕからなる金属膜５ａを、同様に蒸
着法により形成する。次に図４（５）に示す第５工程
で、フォトリソグラフィ法およびエッチング法により金
属膜５ａ、５ｂを複数の短絡膜５、、、５に形成する。
同時に同一の工程で引出電極３、３も形成する。次に図
４（６）に示す第６工程で、基板１を切断して個々の単
独の素子に分離し、さらに図４（７）に示す第７工程
で、半田が被覆された端子７、７を引出電極３、３に熱
圧着により接続する。そして図４（８）に示す第８工程
で、エポキシ樹脂やポリイミド樹脂などの有機材料や、
あるいはシリカやアルミナなどの無機材料により保護膜
６を形成して磁電変換素子２０を得る。First, for example, InS having a magnetoresistive effect.
A bulk 8 consisting of b is prepared. Next, in a first step shown in FIG. 4A, the bulk 8 is adhered to the substrate 1 via the resin layer 4 such as an epoxy resin. A large number of magnetoelectric conversion elements 20 are formed on the substrate 1. Next, in the second step shown in FIG. 4B, the bulk 8 is polished to form the InSb thin film layer 2a.
To form. Next, in a third step shown in FIG. 4C, the InSb thin film layer 2a is formed on the meander line-shaped magnetoresistive effect film 2 by photolithography and etching. Next, in a fourth step shown in FIG. 4 (4), a metal film 5b made of Ti is formed on the surface of the magnetoresistive effect film 2 by a vapor deposition method, and then a metal film 5a made of Cu is similarly deposited by a vapor deposition method. Formed by. Next, in a fifth step shown in FIG. 4 (5), the metal films 5a and 5b are formed on the plurality of short-circuit films 5 and 5 by photolithography and etching.
At the same time, the extraction electrodes 3 and 3 are also formed in the same step. Next, in a sixth step shown in FIG. 4 (6), the substrate 1 is cut into individual devices, and in a seventh step shown in FIG. 4 (7), the solder-covered terminals 7, 7 is connected to the extraction electrodes 3 and 3 by thermocompression bonding. Then, in the eighth step shown in FIG. 4 (8), an organic material such as epoxy resin or polyimide resin,
Alternatively, the protective film 6 is formed of an inorganic material such as silica or alumina to obtain the magnetoelectric conversion element 20.
【０００６】[0006]
【発明が解決しようとする課題】 しかしながら上述し
た従来の磁電変換素子は、端子を接続するために、半田
に濡れやすい材料により引出電極を形成する必要がある
が、その材料としてはＣｕ、Ｉｎ、半田などに限定され
るという問題があった。However, in the conventional magnetoelectric conversion element described above, in order to connect the terminals, it is necessary to form the extraction electrode with a material that is easily wetted by solder. There was a problem that it was limited to solder and the like.
【０００７】しかも短絡膜が露出しているので耐湿性が
悪くなるので、信頼性が劣るという問題があり、保護膜
を形成しても十分な耐湿性が得られなかった。Moreover, since the short-circuit film is exposed, the moisture resistance deteriorates, so that there is a problem that the reliability is deteriorated. Even if the protective film is formed, sufficient moisture resistance cannot be obtained.
【０００８】本発明は上記問題点を解決するためになさ
れたものであり、半田を被覆した端子を磁気抵抗効果膜
に直接半田付けすることにより、短絡膜を形成する材料
が限定されず、しかも端子を接続するための引出電極を
形成する必要がない構造を有する磁電変換素子を提供す
るとともに、磁気抵抗効果膜の短絡膜を形成した面を基
板に接着することにより、耐湿性が高い磁電変換素子を
提供することを目的とする。The present invention has been made to solve the above problems, and by directly soldering a terminal coated with solder to a magnetoresistive effect film, the material for forming the short-circuit film is not limited, and The present invention provides a magnetoelectric conversion element having a structure in which it is not necessary to form an extraction electrode for connecting a terminal, and the surface of the magnetoresistive film on which the short-circuit film is formed is adhered to a substrate so that the magnetoelectric conversion has high moisture resistance. The purpose is to provide a device.
【０００９】[0009]
【課題を解決するための手段】 本発明の磁電変換素子
は、上記従来の磁電変換素子が有する問題を解決するた
めになされたもので、一方の面に複数の短絡膜が形成さ
れた磁気抵抗効果膜と、基板と、前記磁気抵抗効果膜の
両端に電気的にそれぞれ接続する一対の端子とを有する
磁電変換素子において、前記磁気抵抗効果膜の前記短絡
膜が形成された一方の面に前記基板が接着され、他方の
面の両端に前記一対の端子がそれぞれ接続された構造に
した。Means for Solving the Problems The magnetoelectric conversion element of the present invention has been made in order to solve the problem of the above-described conventional magnetoelectric conversion element, and is a magnetoresistive device having a plurality of short-circuit films formed on one surface thereof. In a magnetoelectric conversion element having an effect film, a substrate, and a pair of terminals electrically connected to both ends of the magnetoresistive effect film, the magnetoresistive effect film is provided on one surface on which the short-circuit film is formed. The substrate was adhered, and the pair of terminals were connected to both ends of the other surface.
【００１０】[0010]
【作用】 本発明の磁電変換素子は、磁気抵抗効果膜に
短絡膜を形成し、短絡膜が形成された面を樹脂により基
板に接着したのち、反対側の面の磁気抵抗効果膜上に直
接端子を接続する構造としたので、磁気抵抗効果膜で短
絡膜が保護されるとともに、半田に対する濡れ性を考慮
せずに、短絡膜の材料を選択できる。According to the magneto-electric conversion element of the present invention, a short-circuit film is formed on the magnetoresistive effect film, the surface on which the short-circuit film is formed is adhered to the substrate by resin, and then directly on the magnetoresistive effect film on the opposite surface. Since the terminal is connected, the short-circuit film is protected by the magnetoresistive film, and the material of the short-circuit film can be selected without considering the wettability with solder.
【００１１】[0011]
【実施例】 本発明の一実施例の磁電変換素子を図１、
２を用いて説明する。図１は本発明の一実施例の磁電変
換素子１０の断面図、図２は本発明の磁電変換素子１０
の製造工程を示す図である。なお従来例と同一の部分に
ついては同一の符号を用いその説明を省略する。EXAMPLE FIG. 1 shows a magnetoelectric conversion element according to an example of the present invention.
2 is used for the explanation. FIG. 1 is a sectional view of a magnetoelectric conversion element 10 of one embodiment of the present invention, and FIG. 2 is a magnetoelectric conversion element 10 of the present invention.
It is a figure which shows the manufacturing process of. The same parts as those of the conventional example are designated by the same reference numerals and the description thereof will be omitted.
【００１２】図１に示すように、磁電変換素子１０は、
ミアンダライン形状を有しＩｎＳｂからなる磁気抵抗効
果膜２に複数個の短絡膜５、、、５が形成され、短絡膜
５、、、５が形成された面にエポキシ樹脂などの樹脂層
４により基板１が接着され、磁気抵抗効果膜２の両端に
端子７、７が接続され、磁気抵抗効果膜２および端子
７、７の接続部分が保護膜６で被覆された構造を有して
いる。なお短絡膜５は、ＩｎＳｂとの接着強度が高いＴ
ｉからなる金属膜５ｂと、膜形成が容易でかつ、信頼性
の高いＡｌからなる金属膜５ａとにより構成された、二
層構造を有している。As shown in FIG. 1, the magnetoelectric conversion element 10 has
A plurality of short-circuit films 5, 5, are formed on the magnetoresistive film 2 having a meander line shape and made of InSb, and a resin layer 4 such as an epoxy resin is formed on the surface on which the short-circuit films 5, 5, are formed. The structure is such that the substrate 1 is adhered, the terminals 7, 7 are connected to both ends of the magnetoresistive effect film 2, and the connecting portions of the magnetoresistive effect film 2 and the terminals 7, 7 are covered with the protective film 6. The short-circuit film 5 has a high T adhesion strength with InSb.
It has a two-layer structure composed of a metal film 5b made of i and a metal film 5a made of Al which is easy and reliable to form a film.
【００１３】次に図２を用いて、磁電変換素子１０の製
造方法を説明する。Next, a method of manufacturing the magnetoelectric conversion element 10 will be described with reference to FIG.
【００１４】まず磁気抵抗効果を有する、例えばＩｎＳ
ｂからなるバルク８を準備する。次に図２（１）に示す
第１工程で、バルク８の一方の面に、フォトリソグラフ
ィ−法により磁気抵抗効果膜２を形成する。次に図２
（２）に示す第２工程で、磁気抵抗効果膜２に、まずＴ
ｉからなる金属膜５ｂを、続いてＡｌからなる金属膜５
ａを蒸着法により形成する。次に図２（３）に示す第３
工程で、フォトリソグラフィ法およびエッチング法によ
り金属膜５ａ、５ｂを複数の短絡膜５、、、５に形成す
る。次に図２（４）に示す第４工程で、短絡膜５、、、
５を形成した面をエポキシ樹脂などによる樹脂層４を介
して基板１に接着する。次に図２（５）に示す第５工程
で、磁気抵抗効果膜２を残してバルク８を研磨する。次
に図２（６）に示す第６工程で、基板１を個々の単独の
素子に切断し、さらに図２（７）に示す第７工程で半田
メッキされた端子７、７を熱圧着により、磁気抵抗効果
膜２の両端に電気的に接続する。さらに図２（８）に示
す第８工程で、磁気抵抗効果膜２に、エポキシ樹脂やポ
リイミド樹脂などの有機材料やシリカやアルミナなどの
無機材料からなる保護膜６を形成し、磁電変換素子１０
を得る。First, for example, InS having a magnetoresistive effect.
A bulk 8 consisting of b is prepared. Next, in a first step shown in FIG. 2A, the magnetoresistive film 2 is formed on one surface of the bulk 8 by photolithography. Next, FIG.
In the second step shown in (2), first the T
the metal film 5b made of i, and then the metal film 5 made of Al.
a is formed by a vapor deposition method. Next, the third shown in FIG.
In the step, the metal films 5a and 5b are formed into the plurality of short-circuit films 5 and 5 by the photolithography method and the etching method. Next, in a fourth step shown in FIG. 2D, the short-circuit film 5 ,.
The surface on which 5 is formed is bonded to the substrate 1 through a resin layer 4 made of epoxy resin or the like. Next, in a fifth step shown in FIG. 2 (5), the bulk 8 is polished while leaving the magnetoresistive film 2. Next, in a sixth step shown in FIG. 2 (6), the substrate 1 is cut into individual elements, and the solder-plated terminals 7 and 7 are subjected to thermocompression bonding in a seventh step shown in FIG. 2 (7). , Are electrically connected to both ends of the magnetoresistive film 2. Further, in the eighth step shown in FIG. 2 (8), a protective film 6 made of an organic material such as epoxy resin or polyimide resin or an inorganic material such as silica or alumina is formed on the magnetoresistive effect film 2, and the magnetoelectric conversion element 10 is formed.
Get.
【００１５】なお本実施例においては、基板１が磁性体
からなる場合について述べたが、磁性体に限定されるわ
けではなく、誘電体や絶縁体であってもよい。さらに磁
性体からなる基板をフェライトトップとして、磁気抵抗
効果膜２に樹脂層により接着してもよい。このような例
においては、保護膜は形成されなくてもよい。In the present embodiment, the case where the substrate 1 is made of a magnetic material has been described. However, the material is not limited to the magnetic material and may be a dielectric material or an insulating material. Further, a substrate made of a magnetic material may be used as a ferrite top and bonded to the magnetoresistive effect film 2 with a resin layer. In such an example, the protective film may not be formed.
【００１６】さらに本実施例においては、磁気抵抗効果
膜がＩｎＳｂのバルクを研磨して形成される場合につい
て述べたが、スパッタリング法やＣＶＤ法や蒸着法によ
り形成されてもよいし、ＦｅＮｉなどの他の磁気抵抗効
果を有する材料で形成されていてもよい。Further, in this embodiment, the case where the magnetoresistive effect film is formed by polishing the bulk of InSb has been described, but it may be formed by a sputtering method, a CVD method, a vapor deposition method, FeNi or the like. It may be formed of another material having a magnetoresistive effect.
【００１７】[0017]
【発明の効果】 本発明の磁電変換素子は、磁気抵抗効
果膜の短絡膜が形成された面に樹脂により基板が接着さ
れ、反対側の面に端子が接続された構造を有するので、
半田に対する濡れ性を考慮せずに短絡膜を形成すること
ができる。すなわち短絡膜を形成するために、磁気抵抗
効果膜との接着強度が高いＴｉや、Ｃｒや、ＮｉＣｒ等
の膜上に形成する金属膜として様々な種類の金属が使用
可能であり、例えば上記実施例のように膜形成が容易な
Ａｌ膜を用いることができる。また磁気抵抗効果膜が保
護膜としてはたらくので、磁電変換素子の耐湿性が向上
する。EFFECTS OF THE INVENTION Since the magnetoelectric conversion element of the present invention has a structure in which the substrate is adhered to the surface of the magnetoresistive film on which the short-circuit film is formed with resin and the terminal is connected to the opposite surface,
The short-circuit film can be formed without considering the wettability with respect to solder. That is, in order to form the short-circuit film, various kinds of metals can be used as the metal film formed on the film such as Ti, Cr, or NiCr, which has high adhesive strength with the magnetoresistive effect film. As in the example, an Al film that can be easily formed can be used. Further, since the magnetoresistive effect film acts as a protective film, the moisture resistance of the magnetoelectric conversion element is improved.
【図１】本発明の一実施例の磁電変換素子の断面図であ
る。FIG. 1 is a sectional view of a magnetoelectric conversion element according to an embodiment of the present invention.
【図２】本発明の一実施例の磁電変換素子の製造工程を
示す図である。FIG. 2 is a diagram showing a manufacturing process of the magnetoelectric conversion element according to the embodiment of the present invention.
【図３】従来の磁電変換素子の断面図である。FIG. 3 is a sectional view of a conventional magnetoelectric conversion element.
【図４】磁気抵抗効果膜の平面図である。FIG. 4 is a plan view of a magnetoresistive film.
【図５】従来の磁電変換素子の製造工程を示す図であ
る。FIG. 5 is a diagram showing a manufacturing process of a conventional magnetoelectric conversion element.
１ 基板 ２ 磁気抵抗効果膜 ３ 引出電極 ４ 樹脂層 ５ 短絡膜 ５ａ、５ｂ 金属膜 ６ 保護膜 ７ 端子 ８ バルク １０、２０ 磁電変換素子 1 Substrate 2 Magnetoresistive film 3 Extraction electrode 4 Resin layer 5 Short-circuit film 5a, 5b Metal film 6 Protective film 7 Terminal 8 Bulk 10 and 20 Magnetoelectric conversion element
───────────────────────────────────────────────────── フロントページの続き (72)発明者 池田 利昭 京都府長岡京市天神二丁目26番10号 株式 会社村田製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshiaki Ikeda 2-10-10 Tenjin, Nagaokakyo, Kyoto Prefecture Murata Manufacturing Co., Ltd.
Claims (1)
気抵抗効果膜と、基板と、前記磁気抵抗効果膜の両端に
電気的にそれぞれ接続する一対の端子とを有する磁電変
換素子において、前記磁気抵抗効果膜の前記短絡膜が形
成された一方の面に前記基板が接着され、他方の面の両
端に前記一対の端子がそれぞれ接続されていることを特
徴とする磁電変換素子。1. A magnetoelectric conversion element comprising: a magnetoresistive effect film having a plurality of short-circuit films formed on one surface; a substrate; and a pair of terminals electrically connected to both ends of the magnetoresistive effect film. The magnetoelectric conversion element, wherein the substrate is adhered to one surface of the magnetoresistive film on which the short-circuit film is formed, and the pair of terminals are connected to both ends of the other surface, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07159526A JP3085147B2 (en) | 1995-06-26 | 1995-06-26 | Magnetoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07159526A JP3085147B2 (en) | 1995-06-26 | 1995-06-26 | Magnetoelectric conversion element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH098379A true JPH098379A (en) | 1997-01-10 |
| JP3085147B2 JP3085147B2 (en) | 2000-09-04 |
Family
ID=15695701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07159526A Expired - Lifetime JP3085147B2 (en) | 1995-06-26 | 1995-06-26 | Magnetoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3085147B2 (en) |
-
1995
- 1995-06-26 JP JP07159526A patent/JP3085147B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3085147B2 (en) | 2000-09-04 |
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