JPH098009A - Plasma processor - Google Patents

Abstract

PURPOSE: To obtain a plasma processor which can secure high plasma density while keeping uniformity in the plasma density and also suppressing plasma diffusion. CONSTITUTION: A susceptor 6 and an upper electrode 32 are oppositely provided in a processing container 3, while high frequency power of relatively low frequency is applied from a first high frequency power source 41 to the susceptor 6 and high frequency power of relatively high frequency is applied from a second high frequency power source 44 to the upper electrode 32. Coils 51, 52 of a double coil structure for forming magnetic fields having polarities reverse to each other are placed above and below and outer periphery of the processing container 3. Plasma in the processing container is confined by a magnetic field wall having an approximate spindle-like shape to have plasma density increased. Since little magnetic field exists on a wafer, uniformity of the plasma density is good.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing various types of plasma processing such as etching processing on an object to be processed.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor manufacturing process, a plasma is generated in a processing container during a process such as a sputtering process or a CVD process including an etching process, and a substrate to be processed, for example, a semiconductor wafer, in the plasma atmosphere. A plasma processing apparatus configured to perform a predetermined process on the surface of a wafer (hereinafter, referred to as “wafer”) is used, but today, the degree of integration of devices is increasing, and improvement of throughput is also very important. Therefore, in these plasma processing apparatuses, not only the improvement of the yield but also the high-speed fine processing is emphasized.

In consideration of this point, for example, an etching apparatus will be described as an example. In a so-called cathode-coupled etching apparatus or anode-coupled etching apparatus that uses high-frequency power for generating plasma, the plasma is configured as it is. In order to increase the density, it is necessary to increase the high frequency power.

However, if the high frequency power is increased in this way, then the incident energy of ions is increased, resulting in damage to the wafer and deterioration of the mask resist.

In order to improve this, Japanese Patent Publication No. 58-123
No. 47 proposes that high frequencies having different frequencies are applied to the upper and lower electrodes, plasma is generated at high frequencies, and the energy of ion incidence is independently controlled at high frequencies.

[0006]

However, in the above-mentioned prior art, there is a limit in improving the plasma density,
When the pressure in the processing container is reduced to carry out finer processing, plasma diffuses into the processing container,
As a result, the desired high-density plasma may not be obtained.

Regarding this point, for example, a parallel magnetic field is formed on the object to be processed, and the configuration of a magnetron RIE apparatus utilizing the magnetron discharge by the orthogonal electromagnetic field formed on the surface of the object is introduced to further increase the plasma density. However, this makes it difficult to ensure the uniformity of the plasma density. Moreover, there still remains the problem of confining the plasma in the processing region in order to suppress the diffusion of the plasma.

The present invention has been made in view of the above points, and provides a plasma processing apparatus which can easily secure the uniformity of plasma density and can secure high plasma density by suppressing plasma diffusion. The purpose is to solve the problem.

[0009]

In order to achieve the above object, a plasma processing apparatus according to claim 1 has two electrodes in a processing container, and a plasma is generated in the processing container to discharge the electrodes. A processing apparatus for performing processing on an object to be processed on one of the electrodes, wherein the one electrode is connected to a first high frequency power source that outputs high frequency power of a relatively low frequency, and the other electrode Is connected to a second high-frequency power source that outputs high-frequency power of a relatively high frequency, and magnetic field generating means that forms a magnetic field wall for confining plasma in the processing container is arranged outside the processing container. It is characterized by that.

A plasma processing apparatus according to a second aspect of the present invention changes the application path of the high frequency power to the electrode in the plasma processing apparatus according to the first aspect, and outputs the high frequency power of a relatively low frequency through the mixing device. Both the first high-frequency power source and the second high-frequency power source that outputs high-frequency power of a relatively high frequency are connected to one electrode on which the object to be processed is placed, and the other electrode is grounded. To do.

According to another aspect of the plasma processing apparatus of the present invention, the one electrode is connected to a first high frequency power source for outputting a high frequency power of a relatively low frequency, the other electrode is grounded, and the inside of the processing container is further connected. A third electrode connected to a second power source that outputs high-frequency power of a relatively high frequency is disposed near the side wall of the processing chamber, and a magnetic field wall for confining the plasma in the processing chamber outside the processing chamber. It is characterized in that a magnetic field generating means for forming is arranged.

In the plasma processing apparatus according to any one of claims 1 to 3, as described in claim 4, the magnetic field wall for confining plasma is spindle-shaped, and more preferably, the space between the opposing electrodes, that is, the object to be processed is processed. If the plasma is confined in the substantially spindle-shaped magnetic field wall around the processing space to be applied, the generated plasma density can be efficiently confined, and there is almost no space on the object to be treated. Since a magnetic field can be used, it is possible to improve the uniformity of processing on the object to be processed.

[0013]

In the plasma processing apparatus according to any one of claims 1, 2, 3 and 4, plasma is generated in the processing container by the high frequency power from the second high frequency power source which outputs the high frequency high frequency power, and the plasma is generated. It is possible to control the incident energy of the ions to the object to be processed by the low frequency high frequency power from the first high frequency power supply. In view of this effect, the frequency of the first high-frequency power source is preferably a frequency that can be followed by the ions, for example, a frequency of 1 MHz or less, such as a frequency on the order of several hundred kHz. On the other hand, the second
The frequency of the high frequency power source is a frequency for generating high density plasma, for example, 13.56 MHz, 27.12M.
Frequencies above 1 MHz, such as Hz, are preferred.

In each of the plasma processing apparatuses, a magnetic field generating means for forming a magnetic field wall for confining the plasma in the processing container is arranged outside the processing container. The plasma generated in the processing container by the high frequency electric power is confined by the magnetic field wall. As a result, the plasma does not diffuse and the plasma density increases.

Further, particularly when the substantially spindle-shaped magnetic field wall is formed as in the plasma processing apparatus of the fourth aspect, the magnetic field strength can be made almost 0 (zero) in the central portion of the processing container. In this way, by making the magnetic field strength on one electrode, that is, the object to be processed in a so-called non-magnetic field state, the uniformity of the plasma density on the object to be processed becomes good. Therefore, the uniformity of the treatment under the high density plasma can be improved.

[0016]

EXAMPLE An example in which the present invention is applied to an etching apparatus will be described below. FIG. 1 schematically shows a cross section of an etching apparatus 1 according to the first example. A processing chamber in the etching apparatus 1 is shown in FIG. 2 is formed in a cylindrical processing container 3 made of aluminum or the like which has been subjected to alumite treatment, and the processing chamber 2 is airtightly closed. The processing vessel 3 itself is grounded, for example, by being connected to a ground wire 4.

An insulating support plate 5 made of ceramic or the like is provided at the bottom of the processing chamber 2, and an object to be processed, for example, a semiconductor wafer having a diameter of 12 inches (hereinafter referred to as "wafer") is provided on the insulating support plate 5. A substantially columnar susceptor 6 for mounting W thereon is housed. This susceptor 6
For example, the lower electrode is made of aluminum that has been subjected to alumite treatment.

A refrigerant circulation path 7 through which a refrigerant flows is formed in the susceptor 6, and the refrigerant introduced from the refrigerant introduction pipe 8 circulates in the refrigerant circulation path 7 and a refrigerant discharge pipe 9 is formed.
From the processing container 3. With this configuration, the susceptor 6 and the wafer W can be cooled to a predetermined temperature. At the same time, a heating means such as a ceramic heater is separately provided in the susceptor 6, and the heating means is controlled by the control of an appropriate temperature sensor, and the wafer W is controlled to a predetermined temperature together with the action of the coolant circulation path 7 described above. It may be configured to. In this case, finer temperature adjustment is possible.

An electrostatic chuck 11 for attracting and holding the wafer W is provided on the susceptor 6. The electrostatic chuck 11 has a structure in which a conductive thin film 12 is sandwiched between polyimide resin films 13 from above and below, and a high-voltage DC power supply 1 installed outside the processing container 3 is provided.
4 is applied to the thin film 12 with a predetermined DC voltage, for example, a voltage of 1.5 kV to 2 kV, the resin film 13
The wafer W placed on the electrostatic chuck 11 is adsorbed and held on the upper surface of the electrostatic chuck 11 by the Coulomb force based on the electric charges generated above.

In the susceptor 6, there is provided a heat transfer gas introducing pipe 15 penetrating the bottom of the processing container 3 and the insulating support plate 5, and is connected to a gas passage 16 opened on the upper surface of the electrostatic chuck 11. ing. Then, an appropriate heat transfer gas, for example, He (helium) gas supplied from the outside of the processing container 3 is passed through the heat transfer gas introducing pipe 15 and the gas flow path 16 to the back surface of the wafer W held on the electrostatic chuck 11. Is supplied to the wafer W, the heat transfer efficiency between the wafer W and the electrostatic chuck 11, that is, the susceptor 6 is improved.

An annular focus ring 17 is provided around the electrostatic chuck 11 on the outer peripheral edge of the upper surface of the susceptor 6 so as to surround the electrostatic chuck 11. The focus ring 17 has a function of improving the uniformity of plasma density around the wafer W when formed of, for example, conductive single crystal silicon or the like, and is formed of an insulator such as quartz. In this case, it has a function of not attracting ions in the plasma and improving the efficiency of incidence on the wafer W. In consideration of such an action, if the conductive focus ring is arranged inside and the insulating focus ring is arranged around the outer periphery thereof, the uniformity of the plasma density around the wafer W is improved, and The effect of increasing the plasma density on the wafer W is obtained.

A baffle plate 18 having a large number of through holes is arranged around the susceptor 6, and an exhaust port 19 is provided below the baffle plate 18 near the bottom of the processing container 3. The exhaust port 19 is provided and is connected to an exhaust pipe 21 that communicates with a vacuuming means 20 such as a turbo molecular pump. Therefore, the evacuation means 20
By the operation of, the inside of the processing container 3 can be evacuated to a predetermined decompression degree, for example, to 10 mTorr, and in that case, the gas inside the processing container 3 is exhausted through the baffle plate 18, so that the gas can be uniformly discharged. It is possible to exhaust to.

The exhaust of the inside of the processing container 3 and the maintenance of the reduced pressure inside the processing container 3 by the operation of the vacuuming means 20 are detected by a detection signal from a pressure sensor (not shown) provided in the processing container 3. It is designed to be controlled automatically based on this.

An upper electrode 32 is provided above the processing chamber 2 via an insulating material 31 made of alumina, for example. The upper electrode 32 is made of a conductive material, for example, aluminum that has been subjected to alumite oxide treatment. At least the surface 32a facing the wafer W is made of another conductive material, for example, single crystal silicon. Good. The upper electrode 32 has a hollow portion 32b inside.
And a gas inlet 33 is formed in the upper center of the upper electrode 32, and the gas inlet 33 communicates with the hollow portion 32b. A large number of ejection ports 32c are formed on the surface 32a facing the wafer W.

A gas introduction pipe 34 is provided at the gas introduction port 33.
Is connected to the gas introduction pipe 34, and the valve 3 is connected to the gas introduction pipe 34.
5. A processing gas supply source 37 is connected via a mass flow controller 36 for adjusting the flow rate. In this embodiment, a predetermined processing gas, for example, a CF-based etching gas such as CF ₄ gas or C ₄ F ₈ gas is supplied from the processing gas supply source 47, and the etching gas is a mass flow. The flow rate is adjusted by the controller 36,
The ejection port 32c of the upper electrode 32 is configured to uniformly eject the wafer W.

Next, the high frequency power supply system of the etching apparatus 1 will be described. First, the frequency of the lower electrode susceptor 6 is about several hundred kHz, for example, 80.
First high frequency power supply 41 that outputs high frequency power of 0 kHz
Power is supplied from the matching unit 42 having a blocking capacitor or the like. On the other hand, for the upper electrode 32, from the second high frequency power supply 44 that outputs a high frequency power of 1 MHz or higher, for example, 27.12 MHz, whose frequency is higher than that of the first high frequency power supply 41, via the matching unit 43. Is configured to be supplied with power.

A coil 5 is provided above and below the outer circumference of the processing container 3.
1, 52 are arranged to face each other. The coil 51 has a double coil structure including an inner coil 51a and an outer coil 51b, and the coil 52 also includes an inner coil 52a and an outer coil 5.
2b has a double coil structure. Then, when a power source (not shown) from the outside supplies mutually opposite currents to the inner coil 51a and the outer coil 51b, respectively, and mutually opposite currents also flow to the inner coil 52a and the outer coil 52b. , Magnetic fields having mutually opposite polarities can be formed.

The magnetomotive force of each coil 51 is
1 outer coil 51b, outer coil 52b of coil 52
Is 1000 AT to 4000 AT, the inner coil 51a of the coil 51 and the inner coil 52a of the coil 52 are -1000 AT.
It is preferable to set to ˜-4000 AT. However, regarding the absolute magnetomotive force, the outer coils 51b> the inner coil 51a and the outer coil 52b> the inner coil 52a are in a relationship with each other in order to suitably form the magnetic field wall.

The main part of the etching apparatus 1 according to the first embodiment is configured as described above, and the side surface of the etching apparatus 1 is, for example, via a gate valve (not shown), a transfer arm or the like. Load lock chambers (not shown) accommodating the wafer transfer means and the like are arranged in parallel.

Next, by using the etching apparatus 1 having the above-described structure, for example, an oxide film (SiO ₂ ) of a silicon wafer W is formed.
The process, action, etc. in the case of etching will be described. First, the wafer W as the object to be processed is carried into the processing chamber 2 from the load lock chamber, and the electrostatic chuck 1
When the wafer W is placed on the electrostatic chuck 11, a predetermined voltage is applied from the high-voltage DC power supply 14 to the conductive thin film 12 in the electrostatic chuck 11, and the wafer W is attracted and held on the electrostatic chuck 11.

Next, the inside of the processing chamber 2 is evacuated by the evacuation means 20 to a predetermined degree of vacuum, for example, 10
After reaching mTorr, a predetermined processing gas, for example CF _4, is supplied from the processing gas supply source 37 at a predetermined flow rate ratio, and the pressure in the processing chamber 2 is set and maintained at a predetermined vacuum degree, for example, 20 mTorr.

Thereafter, the inner coil 51 of the coil 51 is
a, 51b and the inner coil 52a, 52b of the coil 52
When a predetermined reverse current is supplied to the processing container 3 from an external power source (not shown), as shown in FIG.
A magnetic field wall is formed around the facing space between the upper electrode 32 and the susceptor 6 in such a manner that the facing space bulges outward as it approaches the central portion in the vertical direction, that is, a substantially spindle-shaped envelope. It

Next, with respect to the upper electrode 32, the frequency is 27.12 MHz and the power is 2 k from the second high frequency power source 44.
When the high frequency power of W is supplied, plasma is generated between the upper electrode 32 and the susceptor 6. With a slight delay (timing delay of 1 second or less) from this, the frequency from the first high frequency power supply 41 to the susceptor 6 becomes 80%.
High frequency power of 0 kHz and power of 1 kW is supplied.
In this way, by supplying the high frequency power to the susceptor 6 with a timing delayed from the upper electrode 32,
The wafer W can be prevented from being damaged by an excessive voltage.

The plasma generated by the application of the high frequency (27.12 MHz) from the second high frequency power source 44 dissociates the etching gas in the processing chamber 2, that is, the gas molecules of the CF ₄ gas, and the etchant ions generated thereby. However, while the incident speed is controlled by the high frequency (800 kHz) having a relatively low frequency supplied from the first high frequency power supply 41 to the susceptor 6 side, the wafer W
The silicon oxide film (SiO ₂ ) on the surface is etched. Therefore, a predetermined etching process can be performed without damaging the wafer W.

In this case, since the spindle-shaped magnetic field wall is formed around the facing space between the upper electrode 32 and the susceptor 6 as described above, the upper electrode 32 and the susceptor 6 are formed.
The plasma generated during this is prevented from diffusing by the wall of the magnetic field. Therefore, the plasma density in the region between the upper electrode 32 and the susceptor 6 becomes correspondingly high, and as a result, the wafer W can be subjected to a high-speed etching process under the high-density plasma. ing.

Further, since the magnetic field is such that the opposing space between the upper electrode 32 and the susceptor 6 is wrapped in a substantially spindle shape, the magnetic field strength on the susceptor 6 is almost 0 (zero).
Or a value close to it.

When the magnetic field strength on the wafer W was actually verified by using the etching apparatus 1 according to the first embodiment,
The results shown in the graph of FIG. 3 were obtained. In the graph, the horizontal axis represents the distance (mm) from the center of the wafer W, the vertical axis represents the magnetic field strength (Gauss), and the parameter Z represents the vertical distance (mm) from the wafer W.

According to this, the peripheral edge of the wafer W is 1
The magnetic field strength sharply rises from a point slightly outside of 50 mm, and a magnetic field strength of about 120 Gauss is obtained at a point of about 225 mm on the surface of the wafer W (Z = 0 mm) and about 150 Gauss at a point 10 mm above the wafer W. On the other hand,
The magnetic field strength at the center of the wafer W was about 6 Gauss. Therefore, while there is almost no magnetic field on the wafer W,
It can be confirmed that a magnetic field wall is formed outside the peripheral portion.

Therefore, the plasma generated in the processing container 3 is confined substantially in the facing space between the upper electrode 32 and the susceptor 6 by the wall of the magnetic field, and the wafer W
Since the upper part has almost no magnetic field, the uniformity of the plasma density on the wafer W is not hindered. Therefore, the wafer W can be subjected to high-speed and uniform etching treatment in a high-density and uniform plasma atmosphere.

According to the graph shown in FIG. 3, at the position 20 mm above the wafer W, on the surface of the wafer W (Z
It can be seen that the magnetic field strength characteristics are the same as those of (= 0 mm). This is because, as described above, the two spindles 51 and 52 form a substantially spindle-shaped magnetic field, so that the magnetic field strength is vertically symmetrical. Therefore, from this point as well, it can be confirmed that the plasma in the processing container 3 is not biased and has high uniformity.

In the etching apparatus 1 according to the first embodiment, the susceptor 6 is connected to the first high frequency power source 41 for generating high frequency high frequency power, and the upper electrode 32 is relatively high. Although the second high frequency power source 44 for generating high frequency power of the frequency is connected, the high frequency power of these two different frequencies is used like the etching apparatus 61 according to the second embodiment shown in FIG. Both the first high-frequency power supply 41 and the second high-frequency power supply 44 that generate the noise may be connected to the susceptor 6. In FIG. 4, members designated by the same reference numerals as those in FIG. 1 have the same configurations as the members in the etching apparatus 1 according to the first embodiment.

That is, in the etching apparatus 61 shown in FIG. 4, the first high frequency power supply 41 and the second high frequency power supply 44 are used.
Both of them are connected to a mixing device 64 through matching devices 62 and 63 each having a built-in filter or the like for preventing mutual interference, and high-frequency powers of two different frequencies are superposed through the mixing device 94. In the form
It is configured to be applied to the susceptor 6.

Further, in this etching apparatus 61,
The upper electrode 32 is directly fixed to the processing container 3 without an insulating material, and the processing container 3 and the upper electrode grounded by the ground wire 4 have the same potential, that is, the upper electrode 32 is grounded.

Also with the etching apparatus 61 having such a configuration, the etchant ions dissociated by the plasma generated by the application of the high frequency (for example, 27.12 MHz) from the second high frequency power supply 44 are applied from the first high frequency power supply 41. High frequency of low frequency (eg 8
(00 kHz), the surface of the wafer W is etched while the incident speed is controlled. Therefore,
High-speed etching without damage is possible.

Of course, similar to the etching apparatus 1 according to the first embodiment, a coil 51 having a double coil structure is provided outside the processing container 3 as a means for forming a magnetic field wall.
52 are arranged above and below, so that each of these coils 5
1, 52 form a substantially spindle-shaped magnetic field wall in the processing container 3, and like the etching apparatus 1 according to the first embodiment, the plasma generated in the processing container 3 is confined by the magnetic field wall. The plasma density of the processing space is high. Therefore, a high etching rate can be obtained. Further, as in the above-mentioned embodiment, since there is almost no magnetic field on the wafer W, the uniformity of processing is good.

Next, an etching apparatus 71 according to the third embodiment shown in FIG. 5 will be described. In addition, in FIG.
The members indicated by the same reference numerals have the same structure as the members in the etching apparatus 1 according to the first embodiment. In the etching apparatus 71 according to the third embodiment, the application route of high frequency power of relatively high frequency for generating plasma in the processing container 3 and the electrode configuration are changed.

That is, in the etching apparatus 71 shown in FIG. 5, similarly to the etching apparatus 61 according to the second embodiment, first, the upper electrode 32 is directly fixed to the processing container 3,
The same potential as the processing container 3 which is grounded by the ground wire 4,
That is, it is set to the ground potential. Then, near the side wall in the processing container 3, for example, an annular third electrode 72, which is insulated from the processing container 3, is provided, and a third electrode 72 having a relatively high frequency is provided to the third electrode 72 via the matching unit 43. The second high frequency power supply 44 for generating high frequency power is connected.

In the case of the etching apparatus 71 having such a structure, the high frequency (for example, 2) from the second high frequency power source 44 is used.
(7.12 MHz) is applied to the third electrode 72,
Plasma is generated in the processing container 3. Then, the etchant ions in the plasma etch the surface of the wafer W while controlling the incident speed thereof by a high frequency (for example, 800 kHz) having a low frequency from the first high frequency power source 41 applied to the susceptor 6. is there. Therefore, similar to each of the above-described embodiments, high-speed etching without damage is possible.

Of course, like the etching apparatuses 1 and 61 according to the first and second embodiments, coils 51 and 52 having a double coil structure are vertically arranged outside the processing container 3 as means for forming a magnetic field wall. Since the coils 51 and 52 are arranged, a substantially spindle-shaped magnetic field wall is formed in the processing chamber 3, and the plasma generated in the processing chamber 3 is generated by the upper electrode 32 and the susceptor as in the above-described embodiments. The plasma density is high because it is confined in the facing space between 6 and 6. Therefore, a high etching rate can be obtained.

Further, as in the above-mentioned respective embodiments, the coils 51, 5
As a result of the formation of the reverse polarity magnetic field by 2, the plasma is confined by the wall of the substantially spindle-shaped magnetic field, so that there is almost no magnetic field on the wafer W and the uniformity of the process is good.

The shape of the third electrode 72 is not limited to the annular shape as long as plasma can be generated in the processing container 3 by applying high-frequency power, and an appropriate shape can be used.

Although each of the above-described embodiments is an example configured as an etching apparatus, the present invention is not limited to this, and the present invention is embodied as another plasma processing apparatus such as an ashing apparatus, a sputtering apparatus, and a CVD apparatus. it can.
Further, the object to be processed is not limited to the wafer but may be an LCD substrate.

[0053]

According to the plasma processing apparatus of the present invention, the magnetic field generating means forms a magnetic field wall for confining the plasma, and the plasma is confined in the magnetic field wall. The spread of
Various plasma treatments can be performed on the object under high plasma density. Furthermore, high-speed and fine processing can be performed without damaging the object to be processed. Further, in particular, according to the plasma processing apparatus of the fourth aspect, the magnetic field on the object to be processed can be made almost non-magnetic, the uniformity of the plasma density on the object to be processed can be improved, and uniform processing can be realized.

[Brief description of drawings]

FIG. 1 is a sectional explanatory view of an etching apparatus according to a first embodiment of the present invention.

FIG. 2 is an explanatory view showing a form of a magnetic field wall in the etching apparatus of FIG.

3 is a graph showing the relationship between the distance from the wafer center and the magnetic field strength in the etching apparatus of FIG.

FIG. 4 is a sectional explanatory view of an etching apparatus according to a second embodiment of the present invention.

FIG. 5 is a cross-sectional explanatory view of an etching apparatus according to a third embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 etching apparatus 2 processing chamber 3 processing container 6 susceptor 11 electrostatic chuck 20 evacuation means 32 upper electrode 37 processing gas supply source 41 first high frequency power supply 44 second high frequency power supply 51, 52 coil 51a, 52a inner coil 51b, 52b Outer coil W wafer

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Yoichi Araki 1 2381 Kitashitajo Kitashitajo, Fujii-cho, Nirasaki-shi, Yamanashi Tokyo Electron Yamanashi Co., Ltd.

Claims (4)

[Claims] 1. Two electrodes are arranged opposite to each other in a processing container,
A processing apparatus for generating plasma in the processing container to perform processing on an object to be processed on one of the electrodes, wherein the one electrode supplies high frequency power of a relatively low frequency. It is connected to a first high frequency power source for outputting, the other electrode is connected to a second high frequency power source for outputting high frequency high frequency power, and the plasma inside the processing vessel is outside the processing vessel. Magnetic field generating means for forming a magnetic field wall for confining the
Plasma processing equipment. 2. The two electrodes are arranged to face each other in the processing container,
A processing apparatus for generating plasma in the processing container to perform processing on an object to be processed on one of the electrodes, wherein the one electrode is relatively moved through a mixing device. The processing chamber is connected to both a first high frequency power source that outputs a low frequency high frequency power and a second high frequency power source that outputs a relatively high frequency high frequency power, and the other electrode is grounded. Outside of
A plasma processing apparatus, characterized in that a magnetic field generating means for forming a magnetic field wall for confining plasma in the processing container is arranged. 3. Two electrodes are arranged opposite to each other in a processing container,
A processing apparatus for generating plasma in the processing container to perform processing on an object to be processed on one of the electrodes, wherein the one electrode supplies high frequency power of a relatively low frequency. A second electrode which is connected to a first high frequency power source for outputting and the other electrode is grounded, and which outputs high frequency high frequency power in the vicinity of the side wall in the processing container.
A third electrode connected to the power source of the plasma processing apparatus, and a magnetic field generating means for forming a magnetic field wall for confining the plasma inside the processing chamber is arranged outside the processing chamber. Processing equipment. 4. The plasma processing apparatus of claim 1, 2 or 3, wherein the magnetic field wall has a substantially spindle shape.