JPH0963910A - Joined wafer and manufacture thereof - Google Patents
Joined wafer and manufacture thereofInfo
- Publication number
- JPH0963910A JPH0963910A JP7245471A JP24547195A JPH0963910A JP H0963910 A JPH0963910 A JP H0963910A JP 7245471 A JP7245471 A JP 7245471A JP 24547195 A JP24547195 A JP 24547195A JP H0963910 A JPH0963910 A JP H0963910A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- silicon wafer
- bonded
- silicon
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は張り合わせウェー
ハおよびその製造方法、特にパワー素子・複合素子等に
使用される張り合わせウェーハおよびその製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonded wafer and a method for manufacturing the same, and more particularly to a bonded wafer used for a power element / composite element and the like and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来より、シリコンウェーハの張り合わ
せにあっては、用いられるシリコンウェーハとしてはＯ
Ｈ基を持った表面が必要とされている。シリコンウェー
ハ表面をこのように形成するには、通常ＳＣ１（ｓｔａ
ｎｄａｒｄ ｃｌｅａｎｉｎｇ１）洗浄液を用いて洗浄
して表面に自然酸化膜を形成するか、または、この後表
面をＨＦ（希フッ酸）処理していた。すなわち、シリコ
ンウェーハの表面にＳｉ−Ｈを生じさせ、これら表面同
士を重ね合わせて結合していた。2. Description of the Related Art Conventionally, when bonding silicon wafers, the silicon wafer used is O.
A surface with H groups is needed. To form a silicon wafer surface in this way, it is usually necessary to use SC1 (sta
The cleaning was performed by using a cleaning solution 1) to form a natural oxide film on the surface, or after that, the surface was treated with HF (dilute hydrofluoric acid). That is, Si-H was generated on the surface of the silicon wafer, and these surfaces were superposed and bonded.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、このよ
うなシリコンウェーハ表面に自然酸化膜を形成した場合
の張り合わせでは、図５（Ａ）に示すように、張り合わ
せ界面でのボロン汚染が顕著であり、かつ、界面に非晶
質の領域が層状となって存在するという不具合があっ
た。また、従来の希ＨＦ処理後のシリコンウェーハ同士
の張り合わせにあっては、張り合わせ界面での結晶格子
同士のミスフィットが生じ、これから欠陥が発生すると
いう課題があった。However, in the case where a natural oxide film is formed on the surface of such a silicon wafer, as shown in FIG. 5A, the boron contamination at the bonding interface is remarkable, In addition, there is a problem that amorphous regions exist in layers at the interface. In addition, in the conventional bonding of silicon wafers after the dilute HF treatment, there is a problem that a misfit occurs between crystal lattices at the bonding interface, which causes a defect.
【０００４】そこで、本願発明者は、張り合わせ界面に
ついて研究した結果、シリコンウェーハの張り合わせ面
に原子１層だけの薄い自然酸化膜を形成して張り合わせ
を行うことにより、張り合わせ界面がスムースで、か
つ、非晶質部分が少なくなるという知見を得た。そこ
で、本発明の目的は、張り合わせ界面で欠陥が発生せ
ず、かつ、その界面部分での連続性が高い張り合わせウ
ェーハおよびその製造方法を提供するものである。Then, as a result of researching the bonding interface, the inventor of the present invention forms a thin natural oxide film of only one atomic layer on the bonding surface of the silicon wafer to perform bonding, so that the bonding interface is smooth and We have found that the number of amorphous parts is reduced. Therefore, an object of the present invention is to provide a bonded wafer that does not cause defects at the bonded interface and has high continuity at the interface, and a method for manufacturing the bonded wafer.
【０００５】[0005]
【課題を解決するための手段】請求項１に記載の発明
は、２枚のシリコンウェーハを張り合わせた張り合わせ
ウェーハであって、その張り合わせ界面に１０〜５０ｎ
ｍの径の略球状の非晶質部分を有する張り合わせウェー
ハである。The invention according to claim 1 is a bonded wafer in which two silicon wafers are bonded together, and the bonded interface has a thickness of 10 to 50 n.
It is a bonded wafer having a substantially spherical amorphous portion with a diameter of m.
【０００６】請求項２に記載の発明は、表面を水素で終
端させた後、その表面にあって１原子層を酸化したシリ
コンウェーハを用いて張り合わせを行う張り合わせウェ
ーハの製造方法である。The invention described in claim 2 is a method of manufacturing a bonded wafer, which comprises terminating the surface with hydrogen and then bonding the silicon wafer on the surface of which one atomic layer is oxidized.
【０００７】請求項３に記載の発明は、シリコンウェー
ハ表面を希フッ酸溶液で洗浄した後、このシリコンウェ
ーハを用いて張り合わせを行う張り合わせウェーハの製
造方法において、上記希フッ酸での洗浄後のシリコンウ
ェーハ表面にて１原子層を酸化させ、このシリコンウェ
ーハ表面を、同じく１原子層を酸化したシリコンウェー
ハ表面に重ね合わせて張り合わせを行う請求項２に記載
の張り合わせウェーハの製造方法である。According to a third aspect of the present invention, in a method for producing a bonded wafer in which the surface of a silicon wafer is washed with a dilute hydrofluoric acid solution, and then the silicon wafer is used for bonding, in 3. The method for producing a bonded wafer according to claim 2, wherein one atomic layer is oxidized on the surface of the silicon wafer, the surface of the silicon wafer is superposed on the surface of the silicon wafer on which the same atomic layer has been oxidized, and bonded.
【０００８】請求項４に記載の発明は、シリコンウェー
ハ表面を希フッ酸で洗浄した後、その表面にオゾンまた
は過酸化水素水を作用させることにより、１原子層を酸
化させた請求項２に記載の張り合わせウェーハの製造方
法である。According to a fourth aspect of the present invention, after cleaning the surface of the silicon wafer with dilute hydrofluoric acid, ozone or hydrogen peroxide solution is allowed to act on the surface to oxidize one atomic layer. It is a method for manufacturing a bonded wafer as described.
【０００９】請求項５に記載の発明は、張り合わせ用の
シリコンウェーハの表面を希フッ酸溶液で洗浄した後、
このシリコンウェーハを用いて張り合わせを行う張り合
わせウェーハの製造方法において、上記希フッ酸溶液で
の洗浄後、ＨＣｌとＨ2Ｏ2との混合溶液を用いてそのシ
リコンウェーハ表面を洗浄した請求項１に記載の張り合
わせウェーハの製造方法である。According to a fifth aspect of the invention, after the surface of the silicon wafer for bonding is washed with a dilute hydrofluoric acid solution,
In the method for manufacturing a bonded wafer in which the silicon wafer is bonded, the surface of the silicon wafer is cleaned with a mixed solution of HCl and H 2 O 2 after cleaning with the diluted hydrofluoric acid solution. It is a method for manufacturing a bonded wafer as described.
【００１０】請求項６に記載の発明は、希フッ酸溶液で
の洗浄後のシリコンウェーハ表面を純水でリンスする工
程を含む請求項３〜５のいずれか１項に記載の張り合わ
せウェーハの製造方法である。The invention according to claim 6 includes the step of rinsing the surface of the silicon wafer after cleaning with a dilute hydrofluoric acid solution with pure water to manufacture the bonded wafer according to any one of claims 3 to 5. Is the way.
【００１１】[0011]
【作用】この発明によれば、鏡面加工したシリコンウェ
ーハ表面を例えばＳＣ１液で洗浄し、パーティクルを除
去する。そして、純水でリンスする。次いで、希フッ酸
で洗浄し、そのシリコンウェーハ表面から自然酸化膜を
除去し、純水でリンスする。このようにしてシリコンウ
ェーハ表面にＳｉ−Ｈの結合を形成する。さらに、この
シリコンウェーハ表面を室温のＳＣ２液（ＨＣｌ／Ｈ2
Ｏ2／Ｈ2Ｏ）に、例えば２分間浸漬させる。なお、高温
の場合は、温度に対応して浸漬時間を短く調整する（例
えば８５℃で２秒間）。この結果、シリコンウェーハ表
面に原子１層分だけの酸化膜が形成される。また、ＳＣ
２液処理に代えてオゾンまたは過酸化水素水にその表面
を作用させる。さらには、このシリコンウェーハ表面を
純水でリンスした後、通常の条件で張り合わせを行う。
このような本発明方法により張り合わせたシリコンウェ
ーハ同士の界面には、ボロン汚染が少なく、かつ、非晶
質部分が少なくその連続性も優れている。According to the present invention, the surface of the mirror-finished silicon wafer is washed with, for example, SC1 liquid to remove particles. Then, rinse with pure water. Then, the surface of the silicon wafer is washed with diluted hydrofluoric acid to remove the natural oxide film, and rinsed with pure water. In this way, Si—H bonds are formed on the surface of the silicon wafer. Furthermore, the surface of this silicon wafer is cooled to room temperature with SC2 solution (HCl / H 2
It is immersed in O 2 / H 2 O) for 2 minutes, for example. When the temperature is high, the immersion time is adjusted to be short according to the temperature (for example, 85 ° C. for 2 seconds). As a result, an oxide film corresponding to one atomic layer is formed on the surface of the silicon wafer. Also, SC
Instead of the two-liquid treatment, the surface is made to act on ozone or hydrogen peroxide water. Furthermore, after rinsing the surface of this silicon wafer with pure water, bonding is performed under normal conditions.
At the interface between silicon wafers bonded together by such a method of the present invention, there is little boron contamination, there are few amorphous parts, and their continuity is excellent.
【００１２】[0012]
【発明の実施の形態】以下この発明の実施例を図面を参
照して説明する。図１はこの発明方法で作製された張り
合わせウェーハの張り合わせ界面を模式的に示す図であ
る。図２は本発明の張り合わせウェーハの製造方法の一
実施例を説明するためのフローチャートである。図３は
一実施例に係る張り合わせ用のシリコンウェーハの表面
部分の原子構造を模式的に示す図である。図４はこの発
明の一実施例に係る処理でのシリコンウェーハ表面の酸
化膜厚を示すグラフである。また、図５の（Ｂ）には一
実施例に係る張り合わせウェーハの界面でのボロン濃度
を示している。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram schematically showing a bonding interface of a bonded wafer manufactured by the method of the present invention. FIG. 2 is a flow chart for explaining one embodiment of the bonded wafer manufacturing method of the present invention. FIG. 3 is a diagram schematically showing an atomic structure of a surface portion of a silicon wafer for bonding according to an example. FIG. 4 is a graph showing the oxide film thickness on the surface of the silicon wafer in the process according to the embodiment of the present invention. Further, FIG. 5B shows the boron concentration at the interface of the bonded wafer according to the example.
【００１３】張り合わせに使用するポリッシュドウェー
ハＰＷは、まず、ＳＣ１洗浄液で表面を洗浄する。純水
での流水リンスの後、希フッ酸洗浄を行う。例えば、ウ
ェーハをＨＦ：Ｈ2Ｏ＝１：１００のＨＦ溶液に１分
間、室温で浸した後、純水による流水リンスを行った。
さらに、室温のＳＣ２洗浄液（組成：ＨＣｌ／Ｈ2Ｏ2／
Ｈ2Ｏ＝１／１／５）中に最長で２分間（１２０秒間）
浸漬する。なお、高温（例えば８５℃）の場合は例えば
２秒間浸漬する。この結果、シリコンウェーハ表面には
自然酸化膜が原子１層分だけ形成される（図３）。図４
はこの場合の自然酸化膜の厚さと浸漬の時間との関係を
示している。そして、この表面を純水でリンスした。こ
の流水リンスは１０ｌ／分で、５分間行い、その後の乾
燥はスピンドライで行った。The surface of the polished wafer PW used for bonding is first cleaned with an SC1 cleaning solution. After rinsing with running deionized water, dilute hydrofluoric acid cleaning is performed. For example, the wafer was immersed in a HF solution of HF: H 2 O = 1: 100 for 1 minute at room temperature, and then rinsed with pure water.
Furthermore, a room temperature SC2 cleaning solution (composition: HCl / H 2 O 2 /
Up to 2 minutes (120 seconds) in H 2 O = 1/1/5
Soak. In the case of high temperature (for example, 85 ° C.), it is immersed for 2 seconds, for example. As a result, a natural oxide film corresponding to one atomic layer is formed on the surface of the silicon wafer (FIG. 3). FIG.
Shows the relationship between the thickness of the natural oxide film and the immersion time in this case. Then, this surface was rinsed with pure water. The running water rinse was performed at 10 l / min for 5 minutes, and the subsequent drying was performed by spin drying.
【００１４】そして、乾燥後３０分以内にこのウェーハ
を用いて室温で所定条件の下に重ね合わせて接着した。
その後の接合熱処理は、ドライＯ2雰囲気で２時間、８
５０℃に加熱した。この結果、シリコンウェーハには、
図３に示すような、Ｈは加熱されて除去された張り合わ
せのための表面が形成され、よって、結晶格子の連続性
が担保され、かつ、非晶質部分の少ない接合界面を得る
ことができる。Then, within 30 minutes after drying, the wafer was laminated and bonded at room temperature under predetermined conditions.
Subsequent heat treatment for bonding is performed in a dry O 2 atmosphere for 2 hours and 8 hours.
Heated to 50 ° C. As a result, the silicon wafer
As shown in FIG. 3, H is heated to form a surface for bonding which is removed, so that the continuity of the crystal lattice is ensured and a bonding interface with few amorphous parts can be obtained. .
【００１５】図１（Ａ）はこの張り合わせウェーハの接
合界面を模式的に示している。ａｍｒは非晶質（アモル
ファス：ＳｉＯｘ）部分を示している。このように界面
には、１０〜５０ｎｍ程度の径の球状の非晶質部分が残
る程度である。この観察はＴＥＭ等で行うことができ
る。比較例として同図（Ｂ）にはＨＦ洗浄直後に張り合
わせたウェーハの接合界面を示す。界面に欠陥ｆが多く
存在している。また、（Ｃ）はＳＣ１洗浄後の張り合わ
せにおけるウェーハの接合界面を示している。この界面
には層状のアモルファス部分ａｍｒが存在している。ウ
ェーハの連続性を阻害していることが明確に示されてい
る。さらに、図５（Ｂ）にはＳＩＭＳ（二次イオン質量
分析）による、この接合界面のボロン濃度を示してい
る。ＳＣ１洗浄後の張り合わせによる場合（同図
（Ａ））と比較してその界面にボロンが多く存在するこ
とはない。よって、この部分でのｐｎ反転等による不具
合発生は完全に防止される。FIG. 1A schematically shows the bonding interface of this bonded wafer. amr indicates an amorphous (amorphous: SiOx) portion. Thus, a spherical amorphous portion having a diameter of about 10 to 50 nm remains on the interface. This observation can be performed by TEM or the like. As a comparative example, FIG. 1B shows a bonding interface of wafers bonded together immediately after HF cleaning. There are many defects f at the interface. Further, (C) shows the bonded interface of the wafer in the bonding after the SC1 cleaning. A layered amorphous portion amr exists at this interface. It is clearly shown to hinder the continuity of the wafer. Further, FIG. 5B shows the boron concentration at this junction interface by SIMS (secondary ion mass spectrometry). Compared to the case of laminating after SC1 cleaning (FIG. 9A), there is not much boron present at the interface. Therefore, the occurrence of defects due to pn inversion or the like in this portion can be completely prevented.
【００１６】なお、上記実施例ではＳＣ２洗浄による１
原子層の酸化を説明したが、この他、オゾン、過酸化水
素水での処理を施すことでも同様に１原子層分の厚さに
酸化膜を形成することができる。オゾンの場合は、例え
ば８ｐｐｍのオゾン水に５秒間シリコンウェーハを浸漬
することで、その表面に自然酸化膜が１層分形成され
る。In the above embodiment, SC2 cleaning
Although the oxidation of the atomic layer has been described, the oxide film can be similarly formed to a thickness of one atomic layer by performing treatment with ozone or hydrogen peroxide solution. In the case of ozone, for example, by immersing a silicon wafer in 8 ppm ozone water for 5 seconds, one layer of a natural oxide film is formed on the surface thereof.
【００１７】[0017]
【発明の効果】この発明によれば、張り合わせ界面で欠
陥が発生しない張り合わせウェーハを得ることができ
る。また、その界面部分での連続性が高い張り合わせウ
ェーハを得ることができる。According to the present invention, it is possible to obtain a bonded wafer in which no defects occur at the bonding interface. Further, a bonded wafer having high continuity at the interface can be obtained.
【図１】この発明の一実施例に係る張り合わせウェーハ
の張り合わせ界面を模式的に示す図である。FIG. 1 is a diagram schematically showing a bonding interface of a bonded wafer according to an embodiment of the present invention.
【図２】この発明の一実施例に係る張り合わせウェーハ
の製造方法を説明するためのフローチャートである。FIG. 2 is a flow chart for explaining a bonded wafer manufacturing method according to an embodiment of the present invention.
【図３】この発明の一実施例に係る張り合わせ用のシリ
コンウェーハの表面部分の原子構造を模式的に示す図で
ある。FIG. 3 is a diagram schematically showing an atomic structure of a surface portion of a silicon wafer for bonding according to an embodiment of the present invention.
【図４】この発明の一実施例に係るＳＣ２処理でのシリ
コンウェーハ表面の酸化膜厚と時間との関係を示すグラ
フである。FIG. 4 is a graph showing a relationship between an oxide film thickness on a silicon wafer surface and time in SC2 processing according to an example of the present invention.
【図５】張り合わせウェーハの接合界面でのボロン汚染
を示すグラフである。FIG. 5 is a graph showing boron contamination at the bonding interface of bonded wafers.
ａｍｒ 非晶質部分 amr amorphous part
───────────────────────────────────────────────────── フロントページの続き (72)発明者 石神 俊一郎 埼玉県大宮市北袋町１丁目297番地 三菱 マテリアル株式会社総合研究所内 (72)発明者 遠藤 光弘 東京都千代田区大手町１丁目５番１号 三 菱マテリアルシリコン株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shunichiro Ishigami 1-1297 Kitabukuro-cho, Omiya-shi, Saitama Inside Research Center, Mitsubishi Materials Corporation (72) Inventor Mitsuhiro Endo 1-1-5 Otemachi, Chiyoda-ku, Tokyo Sanryo Material Silicon Co., Ltd.
Claims (6)
張り合わせウェーハであって、 その張り合わせ界面に１０〜５０ｎｍの径の略球状の非
晶質部分を有する張り合わせウェーハ。1. A bonded wafer obtained by bonding two silicon wafers together, and having a substantially spherical amorphous portion with a diameter of 10 to 50 nm at the bonded interface.
あって１原子層を酸化したシリコンウェーハを用いて張
り合わせを行う張り合わせウェーハの製造方法。2. A method for producing a bonded wafer, which comprises terminating the surface with hydrogen, and then bonding the silicon wafer on the surface of which one atomic layer has been oxidized.
洗浄した後、このシリコンウェーハを用いて張り合わせ
を行う張り合わせウェーハの製造方法において、 上記希フッ酸での洗浄後のシリコンウェーハ表面にて１
原子層を酸化させ、このシリコンウェーハ表面を、同じ
く１原子層を酸化したシリコンウェーハ表面に重ね合わ
せて張り合わせを行う請求項２に記載の張り合わせウェ
ーハの製造方法。3. A method for producing a bonded wafer, which comprises cleaning the surface of a silicon wafer with a dilute hydrofluoric acid solution, and then bonding the silicon wafer with the diluted hydrofluoric acid solution.
3. The method for manufacturing a bonded wafer according to claim 2, wherein the atomic layer is oxidized, and the surface of the silicon wafer is bonded to the surface of the silicon wafer similarly oxidized by one atomic layer to bond the surface.
した後、その表面にオゾンまたは過酸化水素水を作用さ
せることにより、１原子層を酸化させた請求項２に記載
の張り合わせウェーハの製造方法。4. The method for producing a bonded wafer according to claim 2, wherein the surface of the silicon wafer is washed with dilute hydrofluoric acid, and one atomic layer is oxidized by causing ozone or hydrogen peroxide solution to act on the surface. .
を希フッ酸溶液で洗浄した後、このシリコンウェーハを
用いて張り合わせを行う張り合わせウェーハの製造方法
において、 上記希フッ酸溶液での洗浄後、ＨＣｌとＨ2Ｏ2との混合
溶液を用いてそのシリコンウェーハ表面を洗浄した請求
項１に記載の張り合わせウェーハの製造方法。5. A method for manufacturing a bonded wafer, which comprises cleaning the surface of a silicon wafer for bonding with a dilute hydrofluoric acid solution, and then bonding the silicon wafer with the diluted hydrofluoric acid solution. The method for producing a bonded wafer according to claim 1, wherein the surface of the silicon wafer is washed with a mixed solution of H 2 O 2 .
ーハ表面を純水でリンスする工程を含む請求項３〜５の
いずれか１項に記載の張り合わせウェーハの製造方法。6. The method for producing a bonded wafer according to claim 3, further comprising a step of rinsing the surface of the silicon wafer after cleaning with a dilute hydrofluoric acid solution with pure water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24547195A JP3611142B2 (en) | 1995-08-29 | 1995-08-29 | Bonded wafer and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24547195A JP3611142B2 (en) | 1995-08-29 | 1995-08-29 | Bonded wafer and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0963910A true JPH0963910A (en) | 1997-03-07 |
| JP3611142B2 JP3611142B2 (en) | 2005-01-19 |
Family
ID=17134160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24547195A Expired - Fee Related JP3611142B2 (en) | 1995-08-29 | 1995-08-29 | Bonded wafer and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3611142B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100935397B1 (en) * | 2007-03-14 | 2010-01-06 | 가부시키가이샤 사무코 | Method of manufacturing bonded wafer |
| WO2021225027A1 (en) | 2020-05-08 | 2021-11-11 | 信越半導体株式会社 | Method for forming thermal oxide film of semiconductor substrate |
| WO2021240948A1 (en) | 2020-05-26 | 2021-12-02 | 信越半導体株式会社 | Method for forming thermal oxide film of semiconductor substrate |
| WO2022264843A1 (en) | 2021-06-15 | 2022-12-22 | 信越半導体株式会社 | Method for forming thermally oxidized film of semiconductor substrate and method for manufacturing semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05166690A (en) * | 1991-12-11 | 1993-07-02 | Sony Corp | Lamination method for semiconductor wafer |
| JPH05198549A (en) * | 1991-08-26 | 1993-08-06 | Nippondenso Co Ltd | Manufacture of semiconductor substrate |
| JPH06283693A (en) * | 1993-03-26 | 1994-10-07 | Mitsubishi Materials Corp | Manufacture of soi wafer |
-
1995
- 1995-08-29 JP JP24547195A patent/JP3611142B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05198549A (en) * | 1991-08-26 | 1993-08-06 | Nippondenso Co Ltd | Manufacture of semiconductor substrate |
| JPH05166690A (en) * | 1991-12-11 | 1993-07-02 | Sony Corp | Lamination method for semiconductor wafer |
| JPH06283693A (en) * | 1993-03-26 | 1994-10-07 | Mitsubishi Materials Corp | Manufacture of soi wafer |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100935397B1 (en) * | 2007-03-14 | 2010-01-06 | 가부시키가이샤 사무코 | Method of manufacturing bonded wafer |
| US8802540B2 (en) | 2007-03-14 | 2014-08-12 | Sumco Corporation | Method of manufacturing bonded wafer |
| WO2021225027A1 (en) | 2020-05-08 | 2021-11-11 | 信越半導体株式会社 | Method for forming thermal oxide film of semiconductor substrate |
| KR20230008710A (en) | 2020-05-08 | 2023-01-16 | 신에쯔 한도타이 가부시키가이샤 | Method of forming a thermal oxide film on a semiconductor substrate |
| WO2021240948A1 (en) | 2020-05-26 | 2021-12-02 | 信越半導体株式会社 | Method for forming thermal oxide film of semiconductor substrate |
| KR20230014689A (en) | 2020-05-26 | 2023-01-30 | 신에쯔 한도타이 가부시키가이샤 | Method of forming a thermal oxide film on a semiconductor substrate |
| WO2022264843A1 (en) | 2021-06-15 | 2022-12-22 | 信越半導体株式会社 | Method for forming thermally oxidized film of semiconductor substrate and method for manufacturing semiconductor device |
| KR20240019142A (en) | 2021-06-15 | 2024-02-14 | 신에쯔 한도타이 가부시키가이샤 | Method for forming thermal oxide film on semiconductor substrate and manufacturing method for semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3611142B2 (en) | 2005-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5451547A (en) | Method of manufacturing semiconductor substrate | |
| KR101035699B1 (en) | A method of direct bonding two substrates used in electronics, optics, or optoelectronics | |
| KR101057140B1 (en) | Silicon-on-Insulator Substrates with Fine Buried Insulation Layers | |
| JP3175323B2 (en) | Semiconductor substrate manufacturing method | |
| KR102021160B1 (en) | Method for producing transparent soi wafer | |
| JP6168143B2 (en) | Method for manufacturing hybrid substrate | |
| US5763288A (en) | Method for producing semiconductor substrate by wafer bonding | |
| JPH09331049A (en) | Pasted soi substrate and its production | |
| JP5619872B2 (en) | Method for thinning a silicon-on-insulator substrate | |
| KR20070005660A (en) | Preparing a surface of a semiconductor wafer for bonding with another wafer | |
| US5953620A (en) | Method for fabricating a bonded SOI wafer | |
| KR100827907B1 (en) | Process for cleaning silicon substrate | |
| JPH11121310A (en) | Manufacture of semiconductor substrate | |
| JPH09260619A (en) | Soi substrate and its manufacture | |
| JPH0963910A (en) | Joined wafer and manufacture thereof | |
| JPH11354761A (en) | Soi substrate and its production | |
| KR100253583B1 (en) | Fabricating method for junction soi wafer | |
| JP3902321B2 (en) | Manufacturing method of bonded substrates | |
| JPH05109678A (en) | Manufacture of soi substrate | |
| RU2382437C1 (en) | Method of making silicon-on-insulator structures | |
| KR100935397B1 (en) | Method of manufacturing bonded wafer | |
| JPH11260774A (en) | Manufacture of laminated substrate | |
| JPH07245382A (en) | Manufacture of composite element and lamination substrate | |
| JPH07130590A (en) | Manufacture of semiconductor substrate | |
| KR0180622B1 (en) | Method of manufacturing soi wafer having a multi-layer structure by silicon wafer junction at low temperature and soi wafer manufactured by this method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040310 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040610 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040806 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20041001 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20041014 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081029 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081029 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091029 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091029 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101029 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101029 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111029 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111029 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121029 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131029 Year of fee payment: 9 |
|
| LAPS | Cancellation because of no payment of annual fees |