JPH0957612A - Polishing apparatus - Google Patents

Polishing apparatus

Info

Publication number
JPH0957612A
JPH0957612A JP21183895A JP21183895A JPH0957612A JP H0957612 A JPH0957612 A JP H0957612A JP 21183895 A JP21183895 A JP 21183895A JP 21183895 A JP21183895 A JP 21183895A JP H0957612 A JPH0957612 A JP H0957612A
Authority
JP
Japan
Prior art keywords
polishing
polished
polishing liquid
nozzle
cloth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21183895A
Other languages
Japanese (ja)
Other versions
JP2708022B2 (en
Inventor
Hisashi Ueno
久史 上野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21183895A priority Critical patent/JP2708022B2/en
Publication of JPH0957612A publication Critical patent/JPH0957612A/en
Application granted granted Critical
Publication of JP2708022B2 publication Critical patent/JP2708022B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To uniformly spread an abrasive solution without irregularity on the polishing surface of a material to be polished, to carry out polishing stably using a little amount of abrasive solution, lower the polishing cost, and improve effective utilization of a polishing product by enhancing the quality of the polished product. SOLUTION: The apparatus is simplified by disposing an abrasive solution supplying nozzle 8 on a retainer ring 3, while abrasive solution 9 is supplied onto a polishing cloth 6 near a material to be polished by the nozzle 8. Otherwise, the nozzle 8 is provided with a structure having an inwardly curved shape so that the abrasive solution is supplied toward the contacting surface between the polishing cloth 6 and the material 1 to be polished. Further, the material with resistance to alkaline condition is provided for the inside wall of the nozzle 8, and the number of nozzles is also selected according to the material to be polished.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、研磨装置に関し、
特に半導体基板等の表面の凹凸を平坦化する研磨装置に
関する。
TECHNICAL FIELD The present invention relates to a polishing apparatus,
In particular, the present invention relates to a polishing device for flattening irregularities on the surface of a semiconductor substrate or the like.

【0002】[0002]

【従来の技術】図4は、従来の研磨装置の一実施例の主
要構成を示す断面図である。
2. Description of the Related Art FIG. 4 is a sectional view showing the main construction of an embodiment of a conventional polishing apparatus.

【0003】近年、半導体の製造プロセスにおいて、半
導体基板の凹凸および素子や配線の段差を平坦化する研
磨装置が使用されている。その研磨プロセスは一般に先
ず表面の凸部が研磨され消滅してから凹部の研磨が行わ
れ、表面の完全平坦化が達成される方式である。
In recent years, in a semiconductor manufacturing process, a polishing apparatus for flattening irregularities of a semiconductor substrate and steps of elements and wirings has been used. The polishing process is generally a method in which the convex portions on the surface are first polished and disappeared, and then the concave portions are polished to achieve complete flattening of the surface.

【0004】図4において、半導体ウエハー等の被研磨
材料41は、被研磨材料固定ブロック42に固定され
る。被研磨材料固定ブロック(以降、単に固定ブロック
と称する。)42には、研磨中に被研磨材料41が固定
ブロック42からずれたり外れたりするのを防ぐために
被研磨材料保持リング(以降、リテーナーリングと称す
る。)43が被研磨材料の外周部にはめ込まれている。
一方、駆動回転軸44Aを有する回転研磨テーブル45
の上部には研磨布46が接着され、研磨布46上中央部
には研磨液供給ノズル48が設置されている。
In FIG. 4, a polishing material 41 such as a semiconductor wafer is fixed to a polishing material fixing block 42. The polishing material fixing block (hereinafter, simply referred to as a fixing block) 42 has a polishing material holding ring (hereinafter, a retainer ring) to prevent the polishing material 41 from being displaced from or separated from the fixing block 42 during polishing. 43) is fitted in the outer peripheral portion of the material to be polished.
On the other hand, a rotary polishing table 45 having a drive rotary shaft 44A.
A polishing cloth 46 is adhered to the upper part of the above, and a polishing liquid supply nozzle 48 is installed at the center of the polishing cloth 46.

【0005】従来の研磨方法は、上述の研磨装置におい
て研磨液供給ノズル48から研磨材を含有する研磨液4
9が動力で回転する研磨布46上に200cc/min
の割合で供給され、研磨液49は遠心力により回転テー
ブル45の中央部から端部へと研磨布46を伝わって拡
散する。この状態で、固定ブロック42に保持した被研
磨材料41を研磨布46に圧着して研磨を行う。その
際、被研磨材料41の面内の研磨速度の均一性を確保す
るために固定ブロック42も回転および揺動させてい
る。
In the conventional polishing method, the polishing liquid 4 containing the polishing material is supplied from the polishing liquid supply nozzle 48 in the above-mentioned polishing apparatus.
200 cc / min on the polishing cloth 46 that rotates with power
The polishing liquid 49 is supplied in a ratio of 1 to 3, and is diffused by the centrifugal force along the polishing cloth 46 from the central portion to the end portion of the rotary table 45. In this state, the material 41 to be polished held by the fixed block 42 is pressed against the polishing cloth 46 to perform polishing. At that time, the fixed block 42 is also rotated and swung in order to ensure the uniformity of the in-plane polishing rate of the material 41 to be polished.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、前述し
た従来の研磨装置および研磨方法では、研磨液49は遠
心力によって回転研磨テーブル45の中心から外周に向
かって拡散するので実際に研磨に使用される研磨液49
は少なく、したがって効率よく利用されることが望めな
い。つまり、被研磨材料41と研磨液供給ノズル48の
間に距離があるので、供給する研磨液49の一部しか被
研磨材料41に到達せず、大半は回転研磨テーブル45
外に振り切れてしまい無駄になる。特に、回転研磨テー
ブル45の回転速度が速いとき研磨液49が殆ど研磨に
使用されず無駄が多くなる。
However, in the above-described conventional polishing apparatus and polishing method, since the polishing liquid 49 diffuses from the center to the outer periphery of the rotary polishing table 45 by centrifugal force, it is actually used for polishing. Polishing liquid 49
Therefore, it cannot be expected to be used efficiently. That is, since there is a distance between the material to be polished 41 and the polishing liquid supply nozzle 48, only a part of the polishing liquid 49 to be supplied reaches the material to be polished 41, and most of them is the rotary polishing table 45.
It's useless because it swings out. In particular, when the rotation speed of the rotary polishing table 45 is high, the polishing liquid 49 is scarcely used for polishing, resulting in a large amount of waste.

【0007】そこで、研磨液の供給量を減らしたとき、
研磨中に研磨液49が研磨布46と被研磨材料41との
間で不足すると、摩擦力が大きくなり、その結果、被研
磨材料41がリテーナーリング43から外れたり、リテ
ーナーリング43内で割れる可能性がある。したがっ
て、安定性良く研磨を行うためには研磨液48を多量に
流す必要があるので、コスト高になる。
Therefore, when the amount of polishing liquid supplied is reduced,
When the polishing liquid 49 is insufficient between the polishing cloth 46 and the material 41 to be polished during polishing, the frictional force becomes large, and as a result, the material 41 to be polished can be disengaged from the retainer ring 43 or broken in the retainer ring 43. There is a nature. Therefore, it is necessary to flow a large amount of the polishing liquid 48 in order to perform polishing with good stability, resulting in high cost.

【0008】また、研磨中、研磨液49は被研磨材料4
1の周辺部に多く、中心部に少なく供給されるので、被
研磨材料41の研磨速度は端部で速く、中心部で遅くな
り(後述、図2参照)、面内分布は不均一になる。被研
磨材料41の径が大きい場合これが顕著になる。
During polishing, the polishing liquid 49 is used as the material 4 to be polished.
Since a large amount is supplied to the peripheral portion of 1 and a small amount is supplied to the central portion, the polishing rate of the material 41 to be polished is high at the end portion and slow at the central portion (see FIG. 2 described later), and the in-plane distribution becomes nonuniform . This becomes remarkable when the diameter of the material 41 to be polished is large.

【0009】若し、研磨後の被研磨材料41の面内の膜
厚が大きくばらつくと、例えば、被研磨材料41が層間
絶縁膜の場合において、研磨後にドライエッチング工程
を用いてコンタクトホールまたはスルーホールを開孔す
る際、開孔の深さにばらつきが生じる。その結果、コン
タクト抵抗またはスルーホール抵抗がばらついたり、配
線間の導通が取れなくなるという問題が生じる。さら
に、層間絶縁膜のばらつきは配線間容量に悪影響を与
え、配線間の遅延時間のばらつきの原因となって歩留り
も低下してしまう可能性がある。
If the in-plane film thickness of the material to be polished 41 after polishing greatly varies, for example, in the case where the material to be polished 41 is an interlayer insulating film, a contact hole or a through hole is formed by a dry etching process after polishing. When opening a hole, the depth of the opening varies. As a result, there arise problems that the contact resistance or the through-hole resistance fluctuates, and that conduction between wirings cannot be established. Furthermore, variations in the interlayer insulating film adversely affect the inter-wiring capacitance, which may cause variations in the delay time between the wirings and reduce the yield.

【0010】そこで本発明の目的は、研磨液が被研磨材
料の研磨面にむらなく均一に拡がり、少ない研磨液量で
安定した研磨を行うことができ、したがって研磨コスト
の引き下げと、研磨製品の高品質化による製品利用能率
の向上に貢献する研磨装置を提供することである。
Therefore, an object of the present invention is that the polishing liquid uniformly spreads evenly on the polishing surface of the material to be polished, and stable polishing can be performed with a small amount of polishing liquid. Therefore, the polishing cost can be reduced and the polishing product It is an object of the present invention to provide a polishing apparatus that contributes to the improvement of product utilization efficiency by improving quality.

【0011】[0011]

【課題を解決するための手段】本発明の研磨装置は、回
転研磨テーブル上に貼付された研磨布上に研磨液を供給
し、被研磨材料保持リング(以降リテーナーリングとい
う。)内側に保持された被研磨材料を研磨布に圧接して
該被研磨材料を平面研磨する研磨装置において、研磨液
供給ノズルがリテーナーリングに設けられ、研磨液が研
磨液供給ノズルから研磨布上に供給されることを特徴と
している。
A polishing apparatus according to the present invention supplies a polishing liquid onto a polishing cloth attached to a rotary polishing table and holds the polishing liquid inside a material holding ring (hereinafter referred to as a retainer ring). In a polishing apparatus that presses a material to be polished onto a polishing cloth and planarly polishes the material to be polished, a polishing liquid supply nozzle is provided in a retainer ring, and the polishing liquid is supplied from the polishing liquid supply nozzle onto the polishing cloth. Is characterized by.

【0012】なお、研磨液供給ノズルへの流入口が、リ
テーナーリングの軸方向一端面に設けられ、ノズルの形
状が、ほぼ他端面内側端に設けられた噴出口へ向かって
湾曲している、ことが望ましい。また、ノズルは、内壁
が、Ph10〜11のアルカリ度をもった研磨液に耐え
る材料からなることも望ましい。なおまた、複数のノズ
ルが、リテーナーリングの軸心を中心とする一円周上
に、ほぼ等間隔に配置されていることも一層望ましい。
An inlet to the polishing liquid supply nozzle is provided on one end face in the axial direction of the retainer ring, and the shape of the nozzle is curved toward an ejection port provided on the inner end of the other end face. Is desirable. It is also preferable that the inner wall of the nozzle is made of a material that withstands a polishing liquid having an alkalinity of Ph10-11. Furthermore, it is more desirable that the plurality of nozzles are arranged at substantially equal intervals on one circumference centered on the axis of the retainer ring.

【0013】[0013]

【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して説明する。
Next, embodiments of the present invention will be described with reference to the drawings.

【0014】図1の(a)は、本発明の研磨装置の一実
施の形態の主要構成を示す断面図、(b)は、(a)の
線B−B平断面図、(c)は、(a)の部分拡大断面
図、図2は、本実施の形態および従来例における研磨速
度の面内分布を示す図、図3の(a)は、研磨工程前の
被研磨材料の凹凸状況を示す断面図、(b)は、(a)
の本実施形態による研磨工程後の断面図である。
FIG. 1A is a sectional view showing the main structure of an embodiment of a polishing apparatus of the present invention, FIG. 1B is a plane sectional view taken along the line BB of FIG. 1A, and FIG. 3A is a partially enlarged cross-sectional view of FIG. 2A, FIG. 2 is a diagram showing the in-plane distribution of the polishing rate in the present embodiment and the conventional example, and FIG. Is a cross-sectional view showing (a), (b) is (a)
FIG. 6B is a cross-sectional view after the polishing step according to the present embodiment.

【0015】図1に示すように、被研磨材料1を固定す
る被研磨材料固定ブロック(以下、単に固定ブロックと
いう。)2と一体となっているリテーナーリング3には
複数の研磨液供給ノズル8が設けられている。また、固
定ブロック2と連結している回転軸4Bの中心には研磨
液供給路7が貫通しており、この研磨液供給路7は、不
図示の流量調節弁および研磨液昇圧ポンプにこの順に連
結されている。
As shown in FIG. 1, a plurality of polishing liquid supply nozzles 8 are provided in a retainer ring 3 which is integrated with a polishing material fixing block (hereinafter, simply referred to as a fixing block) 2 for fixing a polishing material 1. Is provided. Further, a polishing liquid supply passage 7 penetrates through the center of a rotary shaft 4B connected to the fixed block 2, and the polishing liquid supply passage 7 is connected to a flow control valve (not shown) and a polishing liquid pressure pump in this order. It is connected.

【0016】また、回転研磨テーブル5にも固定ブロッ
ク2同様、回転軸4Aお有し、回転研磨テーブル5上部
には、多孔質硬化型発泡ポリウレタン樹脂からなる研磨
布6が粘着テープで貼り付けられている。
Similarly to the fixed block 2, the rotary polishing table 5 has a rotary shaft 4A, and a polishing cloth 6 made of a porous curable polyurethane foam resin is attached to the upper portion of the rotary polishing table 5 with an adhesive tape. ing.

【0017】本発明の研磨装置は、回転研磨テーブル5
上に貼付された研磨布6上に研磨液9を供給し、リテー
ナーリング3内に保持された被研磨材料1を研磨布6に
圧着して該被研磨材料1を平面研磨する研磨装置におい
て、研磨液供給ノズル8がリテーナーリング3に設けら
れ、研磨液9が研磨液供給ノズル8から研磨布6上に供
給されることを特徴としている。
The polishing apparatus of the present invention comprises a rotary polishing table 5
In a polishing apparatus for supplying a polishing liquid 9 onto a polishing cloth 6 attached to the upper surface of the polishing cloth 6 and pressing the material to be polished 1 held in a retainer ring 3 to the polishing cloth 6 to polish the material to be polished 1 into a flat surface, The polishing liquid supply nozzle 8 is provided in the retainer ring 3, and the polishing liquid 9 is supplied from the polishing liquid supply nozzle 8 onto the polishing cloth 6.

【0018】なお、研磨液供給ノズル8への流入口が、
リテーナーリング3の軸方向上端面に設けられ、ノズル
8の形状が、ほぼ下端面内側端に設けられた噴出口へ向
かって湾曲している。また、ノズル8は、内壁が、Ph
10〜11のアルカリ度をもった研磨液9に耐える材料
からなる。なおまた、複数(図示の場合は8個)のノズ
ル8が、リテーナーリングの軸心を中心とする一円周上
に、ほぼ等間隔を置いて設けられている。なお、このノ
ズルの個数は被研磨材料の大きさ等に応じて適当に選定
される。
The inlet to the polishing liquid supply nozzle 8 is
The nozzle 8 is provided on the upper end surface in the axial direction of the retainer ring 3, and the shape of the nozzle 8 is curved toward the ejection port provided on the inner end of the lower end surface. The inner wall of the nozzle 8 is Ph
It is made of a material that withstands the polishing liquid 9 having an alkalinity of 10 to 11. In addition, a plurality of (eight in the illustrated case) nozzles 8 are provided at substantially equal intervals on one circumference around the axis of the retainer ring. The number of the nozzles is appropriately selected according to the size of the material to be polished.

【0019】次に、本実施の形態による研磨装置の動作
について説明する。図1には固定ブロック2内に真空吸
着系統を示していないが、先ずリテーナーリング3内に
被研磨材料1を真空吸着により固定し、被研磨材料1を
回転研磨テーブル5上に着地しない状態で回転研磨テー
ブル5を回転させながら研磨液供給ノズル8から研磨液
9を流す。研磨液9は平均粒径20nmの二酸化珪素
(SiO2 )を含むPH10〜11のアルカリ系(例え
ば、水酸化カリウム、水酸化アンモニウム、水酸化ナト
リウム、有機アミンなど)の水溶液で、昇圧ポンプによ
り固定ブロック2内の研磨液供給路7を経由してリテー
ナーリング3に設けた研磨液供給ノズル8から研磨布6
上に流す。このリテーナーリング3内においてノズル8
の噴出口へ向かう流路が前述のように下端面の内側端に
向かって湾曲しているので、研磨液9はその流路に従い
被研磨材料1の方向に噴出し、被研磨材料1と研磨布6
との接触面で実際に使用される比率が高まる。したがっ
て研磨液9の使用量は少なくてすむこととなる。研磨液
9の流量は、100cc/minで、流量調節弁でコン
トロールされる。また、回転研磨テーブル5は30rp
mで回転させる。
Next, the operation of the polishing apparatus according to this embodiment will be described. Although the vacuum suction system is not shown in the fixed block 2 in FIG. 1, first, the material to be polished 1 is fixed in the retainer ring 3 by vacuum suction, and the material to be polished 1 is not landed on the rotary polishing table 5. While rotating the rotary polishing table 5, the polishing liquid 9 is caused to flow from the polishing liquid supply nozzle 8. The polishing liquid 9 is an alkaline aqueous solution (for example, potassium hydroxide, ammonium hydroxide, sodium hydroxide, organic amine, etc.) having a pH of 10 to 11 and containing silicon dioxide (SiO 2 ) having an average particle diameter of 20 nm, and is fixed by a boost pump. From the polishing liquid supply nozzle 8 provided in the retainer ring 3 via the polishing liquid supply passage 7 in the block 2 to the polishing cloth 6
Pour on. In this retainer ring 3, the nozzle 8
As described above, since the flow path toward the ejection port of No. 1 is curved toward the inner end of the lower end surface, the polishing liquid 9 is ejected in the direction of the material to be polished 1 according to the flow path, and the material to be polished 1 and the polishing material 1 are polished. Cloth 6
The ratio actually used at the contact surface with is increased. Therefore, the amount of the polishing liquid 9 used can be small. The flow rate of the polishing liquid 9 is 100 cc / min and is controlled by the flow rate control valve. Also, the rotary polishing table 5 is 30 rp
Rotate at m.

【0020】研磨液9が研磨布6上に十分拡散した状態
で、固定ブロック2を30rpmで回転させながら被研
磨材料1を研磨布6に着地させ、固定ブロック2に徐々
に圧力を加えて被研磨材料1を研磨する。
While the polishing liquid 9 is sufficiently dispersed on the polishing cloth 6, the fixed block 2 is rotated at 30 rpm to land the material 1 to be polished on the polishing cloth 6, and a pressure is gradually applied to the fixed block 2 to apply the material to be ground. The polishing material 1 is polished.

【0021】図2には、本実施形態における研磨終了ま
での被研磨材料1の研磨速度の面内分布を従来例におけ
るものと比較して示す。本発明においては図中の線Cの
ように、被研磨材料1の中心部と端部との間における研
磨速度の差は0.01μmであり、従来技術における線
Dと比べて研磨速度のばらつきが約1/5に縮小し良好
な面内均一性を得ることが可能となった。
FIG. 2 shows the in-plane distribution of the polishing rate of the material to be polished 1 in the present embodiment until the end of polishing, as compared with that in the conventional example. In the present invention, as indicated by the line C in the figure, the difference in the polishing rate between the central portion and the end portion of the material to be polished 1 is 0.01 μm, and the variation in the polishing rate compared to the line D in the prior art. Was reduced to about 1/5, and it became possible to obtain good in-plane uniformity.

【0022】そのうえ、上述のとおり研磨液供給ノズル
8がリテーナーリング3内に設けられた構造とすること
により装置全体の簡素化が実現できた。
In addition, the polishing liquid supply nozzle 8 is provided in the retainer ring 3 as described above, so that the entire apparatus can be simplified.

【0023】[0023]

【発明の効果】以上説明したように本発明は、研磨液供
給ノズルがリテーナーリングに設けられ、研磨液が被研
磨材料に向けて直接供給される構造とすること等によ
り、従来に比し、装置全体の簡素化とともに、著しく研
磨液を有効活用でき、したがって研磨液を過剰に流すこ
となしに研磨布と被研磨材料との間で研磨液不足および
それに伴う摩擦弊害のおそれなく、その結果、研磨液が
研磨面にむらなく均一に拡がり、安定した研磨を行える
ので、高品質すなわち使用歩留りのよい製品を低コスト
で製造できる研磨装置を提供できる効果がある。
As described above, the present invention has a structure in which the polishing liquid supply nozzle is provided in the retainer ring and the polishing liquid is directly supplied to the material to be polished. Along with the simplification of the entire apparatus, it is possible to remarkably utilize the polishing liquid, and therefore, without causing excessive flow of the polishing liquid, there is no fear of a shortage of the polishing liquid between the polishing cloth and the material to be polished and a frictional adverse effect thereof, and as a result, Since the polishing liquid uniformly spreads evenly on the polishing surface and stable polishing can be performed, there is an effect that it is possible to provide a polishing apparatus capable of manufacturing a product of high quality, that is, a high yield, at low cost.

【図面の簡単な説明】[Brief description of drawings]

【図1】(a)は、本発明の研磨装置の一実施の形態の
主要構成を示す断面図、(b)は、(a)の線B−B平
断面図、(c)は、(a)の部分拡大断面図である。
1A is a cross-sectional view showing a main configuration of an embodiment of a polishing apparatus of the present invention, FIG. 1B is a plane cross-sectional view taken along line BB of FIG. 1A, and FIG. It is a partial expanded sectional view of a).

【図2】本実施の形態および従来例における研磨速度の
面内分布を示す図である。
FIG. 2 is a diagram showing an in-plane distribution of a polishing rate in the present embodiment and a conventional example.

【図3】(a)は、研磨工程前の被研磨材料の凹凸状況
を示す断面図、(b)は、(a)の本実施の形態による
研磨工程後の断面図である。
FIG. 3A is a sectional view showing a concavo-convex state of a material to be polished before a polishing step, and FIG. 3B is a sectional view after a polishing step according to the present embodiment of FIG.

【図4】従来の研磨装置の一実施例の主要構成を示す断
面図である。
FIG. 4 is a sectional view showing a main configuration of an embodiment of a conventional polishing apparatus.

【符号の説明】[Explanation of symbols]

1,41 被研磨材料 2,42 被研磨材料固定ブロック 3,43 リテーナーリング(被研磨材料保持リン
グ) 4A,4B,44A,44B 回転軸 5,45 回転研磨テーブル 6,46 研磨布 7,47 研磨液供給路 8,48 研磨液供給ノズル 9,49 研磨液 21 半導体基板 22 絶縁膜 23 Al配線 24 プラズマ酸化膜
1,41 Polishing material 2,42 Polishing material fixing block 3,43 Retainer ring (polishing material retaining ring) 4A, 4B, 44A, 44B Rotating shaft 5,45 Rotating polishing table 6,46 Polishing cloth 7,47 Polishing Liquid supply path 8,48 Polishing liquid supply nozzle 9,49 Polishing liquid 21 Semiconductor substrate 22 Insulating film 23 Al wiring 24 Plasma oxide film

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 回転研磨テーブル上に貼付された研磨布
上に研磨液を供給し、被研磨材料保持リング内側に保持
された被研磨材料を前記研磨布に圧接して該被研磨材料
を平面研磨する研磨装置において、研磨液供給ノズルが
前記被研磨材料保持リングに設けられ、前記研磨液が前
記研磨液供給ノズルから前記研磨布上に供給されること
を特徴とする研磨装置。
1. A polishing liquid is supplied onto a polishing cloth attached on a rotary polishing table, and the polishing material held inside a polishing material holding ring is pressed against the polishing cloth to flatten the polishing material. In a polishing device for polishing, a polishing liquid supply nozzle is provided in the material to be polished holding ring, and the polishing liquid is supplied from the polishing liquid supply nozzle onto the polishing cloth.
【請求項2】 前記研磨液供給ノズルへの流入口が、前
記被研磨材料保持リングの軸方向一端面に設けられ、前
記ノズルの形状が、ほぼ他端面内側端に設けられた噴出
口へ向かって湾曲している、請求項1記載の研磨装置。
2. An inflow port to the polishing liquid supply nozzle is provided on one end face in the axial direction of the polishing target material holding ring, and the shape of the nozzle is directed to an ejection port provided on the inner end of the other end face. The polishing apparatus according to claim 1, wherein the polishing apparatus is curved.
【請求項3】 前記ノズルは、内壁が、Ph10〜11
のアルカリ度をもった研磨液に耐える材料からなる、請
求項1記載の研磨装置。
3. The nozzle has an inner wall of Ph10-11.
The polishing apparatus according to claim 1, which is made of a material that withstands the polishing liquid having the alkalinity.
【請求項4】 複数の前記ノズルが、前記保持リングの
軸心を中心とする一円周上に、ほぼ等間隔に配置されて
いる、請求項1記載の研磨装置。
4. The polishing apparatus according to claim 1, wherein the plurality of nozzles are arranged at substantially equal intervals on one circumference centered on the axis of the retaining ring.
JP21183895A 1995-08-21 1995-08-21 Polishing equipment Expired - Lifetime JP2708022B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21183895A JP2708022B2 (en) 1995-08-21 1995-08-21 Polishing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21183895A JP2708022B2 (en) 1995-08-21 1995-08-21 Polishing equipment

Publications (2)

Publication Number Publication Date
JPH0957612A true JPH0957612A (en) 1997-03-04
JP2708022B2 JP2708022B2 (en) 1998-02-04

Family

ID=16612430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21183895A Expired - Lifetime JP2708022B2 (en) 1995-08-21 1995-08-21 Polishing equipment

Country Status (1)

Country Link
JP (1) JP2708022B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999051397A1 (en) * 1998-04-06 1999-10-14 Ebara Corporation Polishing device
EP1038636A2 (en) * 1999-03-26 2000-09-27 Applied Materials, Inc. A carrier head for providing a polishing slurry
WO2002018101A2 (en) * 2000-08-31 2002-03-07 Multi-Planar Technologies, Inc. Chemical mechanical polishing (cmp) head, apparatus, and method and planarized semiconductor wafer produced thereby
JP2002124492A (en) * 2000-10-16 2002-04-26 Nec Corp Semiconductor manufacturing equipment
EP1053830A3 (en) * 1999-05-19 2003-02-05 Infineon Technologies North America Corp. System for dispensing polishing liquid during chemical mechanical polishing of a semiconductor wafer
US6540590B1 (en) 2000-08-31 2003-04-01 Multi-Planar Technologies, Inc. Chemical mechanical polishing apparatus and method having a rotating retaining ring
US6565424B2 (en) 2000-05-26 2003-05-20 Hitachi, Ltd. Method and apparatus for planarizing semiconductor device
EP1495838A1 (en) * 1999-03-15 2005-01-12 Ebara Corporation Wafer polishing apparatus and method for manufacturing wafer
JP2007152499A (en) * 2005-12-06 2007-06-21 Fujikoshi Mach Corp Work polishing method
CN104249290A (en) * 2013-06-28 2014-12-31 上海华虹宏力半导体制造有限公司 Buffer platform device with second choke flow ring in grinding device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6293858B1 (en) 1998-04-06 2001-09-25 Ebara Corporation Polishing device
WO1999051397A1 (en) * 1998-04-06 1999-10-14 Ebara Corporation Polishing device
EP1495838A1 (en) * 1999-03-15 2005-01-12 Ebara Corporation Wafer polishing apparatus and method for manufacturing wafer
EP1038636A2 (en) * 1999-03-26 2000-09-27 Applied Materials, Inc. A carrier head for providing a polishing slurry
JP2000317812A (en) * 1999-03-26 2000-11-21 Applied Materials Inc Carrier head for supplying polishing slurry
JP4693203B2 (en) * 1999-03-26 2011-06-01 アプライド マテリアルズ インコーポレイテッド Carrier head for supplying polishing slurry
KR100726507B1 (en) * 1999-03-26 2007-06-11 어플라이드 머티어리얼스, 인코포레이티드 A chemical mechanical polishing apparatus, a carrier head for the chemical mechanical polishing apparatus, retaining ring for the carrier head, and method for the chemical mechanical polishing apparatus
EP1038636A3 (en) * 1999-03-26 2003-05-14 Applied Materials, Inc. A carrier head for providing a polishing slurry
EP1053830A3 (en) * 1999-05-19 2003-02-05 Infineon Technologies North America Corp. System for dispensing polishing liquid during chemical mechanical polishing of a semiconductor wafer
US6565424B2 (en) 2000-05-26 2003-05-20 Hitachi, Ltd. Method and apparatus for planarizing semiconductor device
WO2002018101A2 (en) * 2000-08-31 2002-03-07 Multi-Planar Technologies, Inc. Chemical mechanical polishing (cmp) head, apparatus, and method and planarized semiconductor wafer produced thereby
US6540590B1 (en) 2000-08-31 2003-04-01 Multi-Planar Technologies, Inc. Chemical mechanical polishing apparatus and method having a rotating retaining ring
WO2002018101A3 (en) * 2000-08-31 2003-01-23 Multi Planar Technologies Inc Chemical mechanical polishing (cmp) head, apparatus, and method and planarized semiconductor wafer produced thereby
JP2012151501A (en) * 2000-08-31 2012-08-09 Ebara Corp Chemical mechanical polishing (cmp) head, apparatus and method
JP2002124492A (en) * 2000-10-16 2002-04-26 Nec Corp Semiconductor manufacturing equipment
JP2007152499A (en) * 2005-12-06 2007-06-21 Fujikoshi Mach Corp Work polishing method
US8025554B2 (en) 2005-12-06 2011-09-27 Fujikoshi Machinery Corp. Method of polishing work
CN104249290A (en) * 2013-06-28 2014-12-31 上海华虹宏力半导体制造有限公司 Buffer platform device with second choke flow ring in grinding device

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