JPH0953171A - Production of magnetostriction thin film - Google Patents
Production of magnetostriction thin filmInfo
- Publication number
- JPH0953171A JPH0953171A JP20812795A JP20812795A JPH0953171A JP H0953171 A JPH0953171 A JP H0953171A JP 20812795 A JP20812795 A JP 20812795A JP 20812795 A JP20812795 A JP 20812795A JP H0953171 A JPH0953171 A JP H0953171A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetostriction
- magnetostrictive
- substrate
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 abstract description 14
- 239000010408 film Substances 0.000 abstract description 6
- 238000001659 ion-beam spectroscopy Methods 0.000 abstract description 6
- 238000010884 ion-beam technique Methods 0.000 abstract description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 239000012071 phase Substances 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は磁歪薄膜の製造方法
に関する。TECHNICAL FIELD The present invention relates to a method for manufacturing a magnetostrictive thin film.
【０００２】[0002]
【従来の技術】磁歪材料は磁気−応力の変換を可能に
し、かつ圧電材料と比較して降伏を起こしにくいため大
きな力と変位を生じさせる可能性を有している。このた
め、磁歪材料の薄膜は、周波数可変型の磁気表面弾性波
（Ｍａｇｎｅｔｉｃ Ｓｕｒｆａｃｅ Ａｃｏｕｓｔｉ
ｃ Ｗａｖｅ：Ｍ−ＳＡＷ）フィルター素子や、アクチ
ュエータデバイスとしての利用が期待されている。2. Description of the Related Art Magnetostrictive materials enable the conversion of magnetism into stress, and are less prone to yielding than piezoelectric materials, and therefore have the potential to generate large forces and displacements. For this reason, the thin film of the magnetostrictive material has a variable frequency surface acoustic wave (Magnetic Surface Acoustic Wave).
It is expected to be used as a c Wave: M-SAW) filter element or an actuator device.
【０００３】しかし、所望のデバイスの要求に応じた特
性を得るためには、従来は組成を変化させて磁歪材料の
合金バルクを調製するという方法が採られており、特性
の制御性の点で問題があった。However, in order to obtain the characteristics according to the requirements of a desired device, conventionally, a method of changing the composition to prepare an alloy bulk of a magnetostrictive material has been adopted, and in terms of the controllability of the characteristics. There was a problem.
【０００４】[0004]
【発明が解決しようとする課題】本発明は任意の組成を
有する磁歪薄膜の磁歪特性を任意に制御できる製造方法
を提供することを目的としている。SUMMARY OF THE INVENTION An object of the present invention is to provide a manufacturing method capable of arbitrarily controlling the magnetostrictive characteristics of a magnetostrictive thin film having an arbitrary composition.
【０００５】[0005]
【課題を解決するための手段】本発明の磁歪薄膜の製造
方法は、基板上に磁歪材料を気相成長させて磁歪薄膜を
製造するにあたり、磁歪薄膜を成膜中または成膜後に熱
処理を行うことにより、その磁歪特性を制御することを
特徴とするものである。According to the method of manufacturing a magnetostrictive thin film of the present invention, when a magnetostrictive material is vapor-deposited on a substrate to manufacture a magnetostrictive thin film, a heat treatment is performed during or after film formation of the magnetostrictive thin film. Thus, the magnetostrictive characteristic is controlled.
【０００６】[0006]
【発明の実施の形態】以下、本発明をさらに詳細に説明
する。本発明において、磁歪材料としては種々の材料を
用いることができるが、特に大きな磁歪を示すＲＴ2
（Ｒ：希土類元素、Ｔ：遷移金属元素）で表される希土
類−遷移金属系の合金を用いることが好ましい。磁歪材
料を気相成長させるには種々の方法を用いることがで
き、具体的にはプラズマフィラメント型イオンビームス
パッタリングなどのスパッタリング法、フラッシュ蒸着
などの蒸着法、イオンプレーティング法、プラズマＣＶ
Ｄ法、ダイナミックミキシング法などが挙げられる。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in more detail below. In the present invention, various materials can be used as the magnetostrictive material, but RT 2 which exhibits a particularly large magnetostriction
It is preferable to use a rare earth-transition metal alloy represented by (R: rare earth element, T: transition metal element). Various methods can be used for vapor-phase growth of a magnetostrictive material. Specifically, a sputtering method such as plasma filament type ion beam sputtering, a vapor deposition method such as flash vapor deposition, an ion plating method, and a plasma CV method.
D method, dynamic mixing method, etc. are mentioned.
【０００７】本発明において、基板としてはＳｉなどの
半導体単結晶基板、ＬｉＮｂＯ3 などの酸化物単結晶基
板、ポリイミド（例えばカプトン）などのポリマーシー
トなどを用いることができる。In the present invention, a semiconductor single crystal substrate such as Si, an oxide single crystal substrate such as LiNbO 3 or a polymer sheet such as polyimide (eg Kapton) can be used as the substrate.
【０００８】本発明の原理を図１を参照して説明する。
なお、この図は成膜方法としてイオンビームスパッタリ
ングを用いた例を示している。本発明の方法では、イオ
ン源１によりイオンビーム２を発生させ磁歪材料からな
るターゲット３をスパッタリングして基板４上に磁歪材
料を成膜させるが、この成膜中または成膜後に磁歪薄膜
を熱処理する。熱処理の手段は、熱伝導、輻射でもよい
し、加速された高エネルギー粒子または電子線による加
熱でもよい。熱処理温度は２００〜１３００℃とするこ
とが好ましい。これは２００℃未満では磁歪特性を十分
に制御することができず、逆に１３００℃を超えると所
望の金属間化合物相を得ることができなくなるなどの問
題が生じるためである。また、磁歪薄膜が酸化されるの
を避けるために、１０-1Ｐａ以下の真空またはＡｒなど
の不活性ガス雰囲気中で熱処理することが好ましい。こ
のような方法により、任意の組成を有する磁歪薄膜の磁
歪特性を制御することができ、具体的には例えば正磁歪
から負磁歪へと変化させることができる。The principle of the present invention will be described with reference to FIG.
Note that this figure shows an example using ion beam sputtering as a film forming method. In the method of the present invention, the ion beam 2 is generated by the ion source 1 and the target 3 made of a magnetostrictive material is sputtered to form a magnetostrictive material on the substrate 4. During or after the film formation, the magnetostrictive thin film is heat-treated. To do. The heat treatment means may be heat conduction, radiation, or heating with accelerated high-energy particles or electron beams. The heat treatment temperature is preferably 200 to 1300 ° C. This is because if the temperature is lower than 200 ° C., the magnetostrictive properties cannot be sufficiently controlled, and if the temperature exceeds 1300 ° C., a desired intermetallic compound phase cannot be obtained. Further, in order to avoid the magnetostrictive thin film from being oxidized, it is preferable to perform heat treatment in a vacuum of 10 −1 Pa or less or in an inert gas atmosphere such as Ar. By such a method, the magnetostrictive characteristic of the magnetostrictive thin film having an arbitrary composition can be controlled, and specifically, for example, it can be changed from positive magnetostriction to negative magnetostriction.
【０００９】[0009]
【実施例】以下、本発明を実施例に基づいて説明する。
図２に本実施例において用いたプラズマフィラメント型
イオンビームスパッタリング装置の概略的な構成図を示
す。図２の各部材は真空容器（図示せず）の内部に設置
されている。イオン源１はプラズマ発生器１１とアーク
チャンバー１２とからなっており、これらの内部にＡｒ
ガスが供給されるが、アークチャンバー１２内はプラズ
マ発生器１１内よりも低圧に設定される。これらの部材
に対して図中矢印で示すように下向き方向に外部磁場Ｂ
が印加されている。プラズマ発生器１１内に供給された
Ａｒガスはタングステン製フィラメントからなるカソー
ド（熱陰極）１３から生じる熱電子によりプラズマとな
り、第１アノード１４および第２アノード１５により引
かれてアークチャンバー１２内に入る。この結果、アー
クチャンバー１２内ではプラズマフィラメント１６が発
生し、Ａｒはイオン化される。生成したＡｒイオンは第
３アノード１７を通して抽出電極１８により引き出され
る。イオン源１からのイオンビーム２は、その出射方向
に対して４５度傾けて設けられた磁歪材料からなるター
ゲット３をスパッタリングし、ターゲット３の上方に設
けられた基板４に磁歪薄膜が成膜される。EXAMPLES The present invention will be described below based on examples.
FIG. 2 shows a schematic configuration diagram of the plasma filament type ion beam sputtering apparatus used in this example. Each member in FIG. 2 is installed inside a vacuum container (not shown). The ion source 1 is composed of a plasma generator 11 and an arc chamber 12, inside of which an Ar
Although the gas is supplied, the pressure inside the arc chamber 12 is set to be lower than that inside the plasma generator 11. An external magnetic field B is applied to these members in a downward direction as shown by arrows in the figure.
Is applied. The Ar gas supplied into the plasma generator 11 becomes plasma by thermoelectrons generated from the cathode (hot cathode) 13 made of a tungsten filament and is drawn by the first anode 14 and the second anode 15 into the arc chamber 12. . As a result, the plasma filament 16 is generated in the arc chamber 12, and Ar is ionized. The generated Ar ions are extracted by the extraction electrode 18 through the third anode 17. The ion beam 2 from the ion source 1 sputters a target 3 made of a magnetostrictive material, which is provided at an angle of 45 degrees with respect to the emission direction, and a magnetostrictive thin film is formed on a substrate 4 provided above the target 3. It
【００１０】本実施例では、ターゲット３を構成する磁
歪材料としてＴｂ0.3 Ｄｙ0.7 Ｆｅ2 を用いて上記のよ
うにイオンビームスパッタリングにより基板上に成膜し
た。そして、基板４上に磁歪薄膜を成膜した直後に、加
熱処理を行った。加熱条件は、真空容器内圧力０．８×
１０-6Ｐａ、加熱温度４５０℃、加熱時間１２時間とし
た。In this example, Tb 0.3 Dy 0.7 Fe 2 was used as the magnetostrictive material forming the target 3 to form a film on the substrate by ion beam sputtering as described above. Then, immediately after the magnetostrictive thin film was formed on the substrate 4, the heat treatment was performed. The heating condition is a vacuum vessel pressure of 0.8 x
The temperature was 10 −6 Pa, the heating temperature was 450 ° C., and the heating time was 12 hours.
【００１１】図３に得られた磁歪薄膜の磁歪特性を示
す。なお、この図には、熱処理を行っていない磁歪薄膜
の磁歪特性も示す。この図は薄膜に平行に印加した磁場
Ｈの大きさと磁歪薄膜の面内の磁歪量Δｌ／ｌとの関係
をしめすものである。FIG. 3 shows the magnetostrictive characteristics of the magnetostrictive thin film obtained. The figure also shows the magnetostrictive characteristics of the magnetostrictive thin film that has not been heat-treated. This figure shows the relationship between the magnitude of the magnetic field H applied parallel to the thin film and the in-plane magnetostriction amount Δl / l of the magnetostrictive thin film.
【００１２】これらの図からわかるように、熱処理を行
っていない磁歪薄膜が正磁歪を示すのに対し、熱処理を
行った磁歪薄膜は負磁歪を示している。また、処理温
度、処理時間などを適宜設定することにより、磁歪薄膜
の磁歪特性を広い範囲にわたって連続的に変化させるこ
とが可能である。したがって、この磁歪薄膜をマイクロ
アクチュエータに応用する場合、その用途に応じて所望
の最適な磁歪特性を得ることができる。さらに、磁歪特
性のヒステリシスは加熱処理後でも加熱処理前と同様に
非常に小さく、この磁歪薄膜を高周波対応のＭ−ＳＡＷ
フィルター素子にも好適に応用できる。As can be seen from these figures, the magnetostrictive thin film which has not been heat-treated exhibits positive magnetostriction, whereas the magnetostrictive thin film which has been heat-treated exhibits negative magnetostriction. Further, by appropriately setting the processing temperature, the processing time, etc., it is possible to continuously change the magnetostrictive characteristics of the magnetostrictive thin film over a wide range. Therefore, when this magnetostrictive thin film is applied to a microactuator, desired optimum magnetostrictive characteristics can be obtained according to the application. Further, the hysteresis of the magnetostrictive property is very small even after the heat treatment as in the case before the heat treatment, and this magnetostrictive thin film is used for high-frequency compatible M-SAW.
It can be suitably applied to a filter element.
【００１３】[0013]
【発明の効果】以上詳述したように本発明の方法を用い
れば、任意の組成を有する磁歪薄膜の磁歪特性を任意に
制御でき、この磁歪薄膜をマイクロマシーンデバイス、
マイクロアクチュエータ、Ｍ−ＳＡＷフィルター素子と
して好適に応用できる。As described in detail above, by using the method of the present invention, the magnetostrictive characteristics of a magnetostrictive thin film having an arbitrary composition can be arbitrarily controlled, and this magnetostrictive thin film can be used as a micromachine device,
It can be suitably applied as a microactuator and an M-SAW filter element.
【図１】本発明方法の原理を説明する図。FIG. 1 illustrates the principle of the method of the present invention.
【図２】本発明の実施例において用いられたプラズマフ
ィラメント型イオンビームスパッタリング装置の構成を
示す図。FIG. 2 is a diagram showing a configuration of a plasma filament type ion beam sputtering apparatus used in an example of the present invention.
【図３】本発明の実施例において製造された磁歪薄膜の
磁歪特性を示す図。FIG. 3 is a diagram showing the magnetostrictive characteristics of the magnetostrictive thin film manufactured in the example of the present invention.
１…イオン源、２…イオンビーム、３…ターゲット、４
…基板、１１…プラズマ発生器、１２…アークチャンバ
ー、１３…カソード、１４…第１アノード、１５…第２
アノード、１６…プラズマフィラメント、１７…第３ア
ノード、１８…抽出電極。1 ... Ion source, 2 ... Ion beam, 3 ... Target, 4
... substrate, 11 ... plasma generator, 12 ... arc chamber, 13 ... cathode, 14 ... first anode, 15 ... second
Anode, 16 ... Plasma filament, 17 ... Third anode, 18 ... Extraction electrode.
Claims (1)
薄膜を製造するにあたり、磁歪薄膜を成膜中または成膜
後に熱処理を行うことにより、その磁歪特性を制御する
ことを特徴とする磁歪薄膜の製造方法。1. When a magnetostrictive material is vapor-deposited on a substrate to manufacture a magnetostrictive thin film, a heat treatment is performed during or after the magnetostrictive thin film is formed to control the magnetostrictive characteristics. Manufacturing method of magnetostrictive thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20812795A JP3785581B2 (en) | 1995-08-15 | 1995-08-15 | Method for producing magnetostrictive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20812795A JP3785581B2 (en) | 1995-08-15 | 1995-08-15 | Method for producing magnetostrictive thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0953171A true JPH0953171A (en) | 1997-02-25 |
| JP3785581B2 JP3785581B2 (en) | 2006-06-14 |
Family
ID=16551093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20812795A Expired - Fee Related JP3785581B2 (en) | 1995-08-15 | 1995-08-15 | Method for producing magnetostrictive thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3785581B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002335027A (en) * | 2001-05-08 | 2002-11-22 | Fdk Corp | Supermagnetostriction thin film element and method of manufacturing it |
| JP2020123629A (en) * | 2019-01-29 | 2020-08-13 | 住友金属鉱山株式会社 | Method of manufacturing vibration power generation device and method of manufacturing magnetostrictive component |
-
1995
- 1995-08-15 JP JP20812795A patent/JP3785581B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002335027A (en) * | 2001-05-08 | 2002-11-22 | Fdk Corp | Supermagnetostriction thin film element and method of manufacturing it |
| JP2020123629A (en) * | 2019-01-29 | 2020-08-13 | 住友金属鉱山株式会社 | Method of manufacturing vibration power generation device and method of manufacturing magnetostrictive component |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3785581B2 (en) | 2006-06-14 |
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