JP2020123629A - Method of manufacturing vibration power generation device and method of manufacturing magnetostrictive component - Google Patents

Abstract

To provide a method for manufacturing a vibration power generation device including a magnetostrictive component which is excellent in orientation and dispersion uniformity of a magnetostrictive material.SOLUTION: When manufacturing a vibration power generation device 1 including magnetic field acting means 4 for applying a magnetic field to at least a part of a vibration target body 2, a magnetostrictive component 5 which is provided in an acting region of magnetic field to be applied by the magnetic field acting means 4 out of the vibration target body 2 and includes a magnetostrictive material, and a coil 6 which is wound around the magnetostrictive component 5, and performs electromagnetic induction depending on the strain of the magnetostrictive material of the magnetostrictive component 5, the magnetostrictive component 5 is formed through a growing step 11 for growing a single crystal or polycrystal 12 made of a magnetostrictive material, a target preparation step 13 for preparing a sputtering target 14 from the single crystal or polycrystal 12 grown in the growing step 11, and a film forming step 15 for performing sputtering by using the sputter target 14 prepared in the target preparation step 13 to form a sputter film 5c on the surface of a base material 5a.SELECTED DRAWING: Figure 1

Description

The present invention relates to a vibration power generation device that generates power by vibration from a vibration source such as a motor, a bridge, or a person's movement, and particularly to a method for manufacturing a vibration power generation device using a magnetostrictive component made of a magnetostrictive material and a method for manufacturing the magnetostrictive component. Regarding

As a conventional vibration power generation technology, a technology that uses a piezoelectric element (a technology that deforms a piezoelectric element to generate electricity by applying an external force to the piezoelectric element in some way) or a technology that uses a magnetostrictive element (magnetostrictive element) In addition, a power generation technique utilizing the inverse magnetostriction effect using a magnet or a coil is already known.
Examples of this type of vibration power generation device include those described in Patent Documents 1 and 2.
Patent Literature 1 describes a sound power generation device that uses a piezoelectric element to generate power by utilizing pressure fluctuations of air due to sound, and a vibration power generation device that uses pressure variation due to vibration to generate power using a piezoelectric element. .. This is a system in which vibration of a human voice is deformed by a piezoelectric ceramic to obtain electric power. Although μW level electric power for producing sound from a speaker can be obtained, mW level electric power required for IOT communication cannot be obtained.
Further, in Patent Document 2, as a vibration power generator using a magnetostrictive element, a magnetostrictive rod having a fixed magnetostrictive material has a cantilever structure, and bending stress is applied to the magnetostrictive rod to bend and deform the magnetostrictive material. It is disclosed that an inverse magnetostrictive effect changes a magnetic flux passing through a coil wound around a magnetostrictive material to generate an induced voltage in the coil.

Japanese Unexamined Patent Publication No. 2006-166694 (best mode for carrying out the invention, FIG. 10) Japanese Patent No. 4905820 (Mode for carrying out the invention, FIG. 4A)

In the vibration force power generator using the piezoelectric element described in Patent Document 1, the piezoelectric material forming the piezoelectric element is a brittle material and is a material that is weak against bending and impact. Therefore, there is a problem that an excessive load cannot be applied, and it becomes difficult to apply a large bending or impact to increase the amount of power generation. Further, the piezoelectric element has a high impedance at a low frequency, and when a load having an impedance lower than that of the piezoelectric element is connected, the voltage generated in the load becomes small, so that the power generated by the power generation becomes small and the power generation efficiency is low. There is also a problem.
On the other hand, in the power generation element using the magnetostrictive material described in Patent Document 2, the magnetostrictive material is a ductile material and is more resistant to bending and impact than the piezoelectric material. Therefore, the amount of power generation can be increased by applying large bending or impact. It is possible to increase. Further, since the impedance of the power generation element is lower than that of the piezoelectric material, the power generation efficiency is less likely to decrease due to the connection of the load having low impedance, and the above-mentioned problems of the piezoelectric material can be solved.
However, the vibration power generation device described in Patent Document 2 includes a magnet for applying a bias magnetic field to the magnetostrictive rod, and generates a large amount of vibration from the vibration source in order to generate spring deformation of the magnetostrictive rod while vibrating. Vibration force is required, and there is a concern that the absorption of vibration energy will be worse. Further, since a frame such as an iron system is used for the frame (coupling yoke) that supports the magnetostrictive rod, rust and metal fatigue easily occur, and an adhesive or solder is used for joining the frame and the magnetostrictive rod. Therefore, there was a problem in long-term reliability.
Further, in order to manufacture a magnetostrictive rod made of a magnetostrictive material, since the crystal made of the magnetostrictive material has an ingot shape, it is necessary to process this into a plate shape to form a magnetostrictive rod. At this time, it is conceivable to use a method such as slicing, electric discharge machining, and wire saw for ingot-shaped crystals, but if this kind of processing method is adopted, a machining cutting margin will occur and most of the ingot-shaped crystals will be produced. May be discarded and wasted. Further, since the crystal is brittle and easily cracked, there is a concern that the processing cost will be very high. This type of processing method is generally difficult to adopt because of the high crystal cost including the processing cost.
Under these circumstances, in manufacturing a magnetostrictive component made of a magnetostrictive material, a manufacturing method effective for manufacturing a high quality magnetostrictive component is strongly desired.

A technical problem to be solved by the present invention is to provide a method for manufacturing a vibration power generation device including a magnetostrictive component excellent in orientation and dispersion uniformity of a magnetostrictive material.

A first technical feature of the present invention is that a vibrated body that receives and propagates vibrations from a vibration source, a magnetic field acting unit that applies a magnetic field to at least a part of the vibrated body, and a vibrated body among the vibrated body. A magnetostrictive component that is provided in the magnetic field acting region of the magnetic field acting unit and includes a magnetostrictive material, and a coil that is wound around the magnetostrictive component and that electromagnetically induces depending on the strain of the magnetostrictive material of the magnetostrictive component, In manufacturing the vibration power generation device, the magnetostrictive component is a growing step of growing a single crystal or a polycrystal composed of a magnetostrictive material, and a sputtering target is made from the single crystal or the polycrystal grown in the growing step. It is produced through a target preparation step and a film formation step of forming a sputtered film on the surface of a base material by performing sputtering using the sputtering target prepared in the target preparation step. And a method for manufacturing a vibration power generation device.

A second technical feature of the present invention is the method for manufacturing a vibration power generation device having the first technical feature, wherein the growing step uses one of the Czochralski method, the vertical Bridgman method, and the floating zone method. And a method for manufacturing a vibration power generation device.
A third technical feature of the present invention is the method for manufacturing a vibration power generation device having the first or second technical feature, wherein the magnetostrictive material is Fe-Ga, Fe-Co, or Fe-Dy-Tb. It is a method for manufacturing a vibration power generation device, which is any one of the above.
A fourth technical feature of the present invention is the method for manufacturing a vibration power generation device having any one of the first to third technical features, wherein the sputtered film is formed to a thickness of 5 to 100 μm. And a method for manufacturing a vibration power generation device.
A fifth technical feature of the present invention is, in the method for manufacturing a vibration power generation device having any one of the first to fourth technical features, in the film forming step, before forming the sputtered film, The method for manufacturing a vibration power generation device is characterized in that an auxiliary film having an orientation property for increasing the magnetostriction constant of the sputtered film is formed as a base of the sputtered film.
A sixth technical feature of the present invention is the method for manufacturing an oscillating power generation device having the fifth technical feature, wherein the sputtered film has an orientation index of [001] and the auxiliary film has an orientation. An index is [100], which is a method for manufacturing a vibration power generation device.
A seventh technical feature of the present invention is the method for manufacturing a vibration power generation device having any one of the first to sixth technical features, wherein the base material of the magnetostrictive component has elasticity made of metal or resin. A method for manufacturing a vibration power generation device, which is characterized in that the vibration power generation device is configured by a plate material.
An eighth technical feature of the present invention is a method for manufacturing a vibration power generation device having any one of the first to seventh technical features, wherein at least one of the growing step and the film forming step is predetermined. It is a method of manufacturing a vibration power generation device, characterized in that it includes an annealing treatment for performing heat treatment under the prescribed temperature and time conditions.

A ninth technical feature of the present invention is, in manufacturing a magnetostrictive component used in a vibration power generation device, a growing step of growing a single crystal or a polycrystal made of a magnetostrictive material, and a single crystal grown in the growing step. Alternatively, a target production step of producing a sputtering target from a polycrystal, and a film formation step of performing sputtering using the sputtering target produced in the target production step and forming a sputtered film on the surface of the base material. And a magnetostrictive component manufacturing method.

According to the first technical feature of the present invention, it is possible to provide a vibration power generation device including a magnetostrictive component having excellent orientation and dispersion uniformity of a magnetostrictive material.
According to the second technical feature of the present invention, it is possible to provide a vibration power generation device including a magnetostrictive component capable of easily growing a single crystal or a polycrystal in which a magnetostrictive material is substantially uniformly dispersed.
According to the third technical feature of the present invention, it is possible to provide a vibration power generation device including a magnetostrictive component having a high magnetostriction constant.
According to the fourth technical feature of the present invention, it is possible to provide a vibration power generation device including a magnetostrictive component in which the thickness of a sputtered film is optimized and which has good power generation efficiency.
According to the fifth technical feature of the present invention, it is possible to provide the vibration power generation device including the magnetostrictive component in which the magnetostriction constant of the sputtered film is increased as compared with the case where the auxiliary film is not provided.
According to the sixth technical feature of the present invention, it is possible to provide a vibration power generation device including a magnetostrictive component having a magnetostriction constant of a sputtered film having a direction index of [001].
According to the seventh technical feature of the present invention, it is possible to provide a vibration power generation device that facilitates propagation of vibration from a vibrated body to a magnetostrictive component.
According to the eighth technical feature of the present invention, it is possible to provide a vibration power generation device including a magnetostrictive component in which the crystallinity of the magnetostrictive material is improved as compared with the case where no annealing treatment is included.
According to the ninth technical feature of the present invention, it is possible to provide a magnetostrictive component having excellent orientation and dispersion uniformity of the magnetostrictive material.

(A) is an explanatory view showing an outline of an embodiment of a vibration power generation device to which the present invention is applied, (b) is an explanatory view showing a structural example of a magnetostrictive component used in the vibration power generation device shown in (a), FIG. 3C is an explanatory diagram showing a method for manufacturing a magnetostrictive component used in this embodiment. (A) is explanatory drawing which shows the structural example of the vibration power generation device which concerns on Embodiment 1, (b) is explanatory drawing which shows the structural example of the magnetostrictive component used by (a), and the example of attachment to a support frame. (A)-(c) shows the manufacturing method of the magnetostrictive component used in Embodiment 1, (a) is a growing process which grows a single crystal ingot, (b) is a sputtering target preparation process, (c) 8A to 8C are explanatory views schematically showing film forming steps of forming a sputtered film of a magnetostrictive component. FIG. 6 is an explanatory diagram showing a configuration example of a vibration power generation device according to a second embodiment. FIG. 9 is an explanatory diagram showing a configuration example of a vibration power generation device according to a third embodiment, and FIG. 9B is an explanatory diagram showing an example of mounting a magnetostrictive component on a support frame. (A) is explanatory drawing which shows the structural example of the vibration power generation device which concerns on Embodiment 4, (b) is explanatory drawing which shows the principal part of the modification 4-1 of the vibration power generation device which concerns on Embodiment 4. FIG. ..

◎Outline of Embodiment FIG. 1A shows a configuration example of a vibration power generation device to which the present invention is applied.
In the figure, the vibration power generation device 1 includes a vibrated body 2 that receives and propagates vibrations from a vibration source 3, a magnetic field acting unit 4 that applies a magnetic field to at least a part of the vibrated body 2, and a vibrated body 2. Among them, a magnetostrictive component 5 including a magnetostrictive material is provided in a magnetic field acting area by the magnetic field acting means 4, and a coil 6 wound around the magnetostrictive component 5 and electromagnetically induced depending on the strain of the magnetostrictive material of the magnetostrictive component 5. And,.
When manufacturing the vibration power generation device 1 of this type, the magnetostrictive component 5 includes a growing step 11 for growing a single crystal or a polycrystal 12 made of a magnetostrictive material, and a growing step, as shown in FIGS. The target production step 13 for producing the sputtering target 14 from the single crystal or the polycrystal 12 grown in 11 and the sputtering target 14 produced in the target production step 13 are used to carry out sputtering to obtain the substrate 5a. And a film forming step 15 of forming a sputtered film 5c on the surface of. In addition, in FIG. 1C, reference numeral 16 is a sputtering device for performing sputtering.

In such a technical means, the vibrating body 2 may be made of any material as long as it can receive and propagate vibration. As the magnetic field acting means 4, a permanent magnet is typically mentioned, but a wide range of means for applying a magnetic field to the vibrated body 2 is included. Further, the basic structure of the magnetostrictive component 5 may be an aspect having a predetermined sputtered film 5c on the surface of the base material 5a. In addition, it is preferable to add a biasing force by a weight or a spring material in order to adjust the resonance frequency of the vibrated body 2.
Further, as a manufacturing process of the magnetostrictive component 5, a growing process 11, a target manufacturing process 13 and a film forming process 15 are required. At this time, the sputtering target 14 includes a wide range of targets that can be sputtered, but a mode in which a single crystal or polycrystal 12 ingot is processed into a circular crystal material, and a support plate (not shown) is attached to the back of this is wasteful. It is preferable in that the amount is reduced.

Next, a representative aspect or a preferable aspect of the method for manufacturing the vibration power generation device according to the present embodiment will be described.
First, as a typical aspect of the growing step 11, a Czochralski method (Czochralski method, crystal pulling method), a vertical Bridgman method (VB method: Vertical Bridgman method), or a floating zone method (Floating zone method) One of the strip method) is used.
Moreover, as a preferable aspect of the magnetostrictive material, any one of Fe-Ga, Fe-Co, and Fe-Dy-Tb can be mentioned. This example illustrates a magnetostrictive material having a high magnetostriction constant.

Further, as a preferable thickness of the sputtered film 5c, it is possible to cite a film thickness of 5 to 100 μm. In this example, if the thickness of the sputtered film 5c is less than 5 μm, the magnetostriction constant is small and it is difficult to generate the generated voltage, and if it exceeds 100 μm, the generated voltage is saturated.
Furthermore, as a preferable mode of the sputtered film 5c, in the film forming step, before forming the sputtered film 5c, an auxiliary film having an orientation property such that the magnetostriction constant of the sputtered film 5c becomes large as a base of the sputtered film 5c. 5b is a mode of forming a film. In this example, the auxiliary film 5b and the sputtered film 5c are formed in this order on the base material 5a.
Here, the auxiliary film 5b is preferably oriented in a direction index of [100], but it may be a polycrystalline film having many orientations.
In particular, as a specific example of a preferred embodiment of the sputtered film 5c, there is an embodiment in which the orientation of the sputtered film 5c is [001] and the orientation of the auxiliary film 5b is [100]. In this example, if the direction index of the sputtered film is [001] and the direction index of the auxiliary film is [100], the orientation of the sputtered film 5c is improved due to the influence of the auxiliary film 5b having high orientation. Show. Further, as a preferable mode of the auxiliary film, it is possible to form a Si or MgO film having a [100] orientation.

Further, as a typical mode of the base material 5a of the magnetostrictive component 5, a mode in which it is made of a metal or resin plate material having elasticity can be mentioned. In this example, when the magnetostrictive component 5 is provided on the vibrated body 2, the vibration of the vibrated body 2 is easily propagated to the magnetostrictive component 5.
Further, as a preferable aspect of the growing step 11 or the film forming step 15 in the manufacturing process of the magnetostrictive component 5, at least one of them includes an annealing treatment for performing heat treatment at a predetermined temperature and time condition. This example is a mode in which a heat treatment (annealing treatment) is included in the growing step 11 or the film forming step 15 to improve the crystallinity (the strain in the crystal is removed and the stress is relaxed to improve the orientation).

Further, in the present embodiment, the method of manufacturing the vibration power generation device 1 has been described, but it can be understood as a method of manufacturing the magnetostrictive component 5 used in the vibration power generation device 1.
Specifically, in manufacturing the magnetostrictive component 5 used in the vibration power generation device 1, a growing step 11 for growing a single crystal or a polycrystal 12 made of a magnetostrictive material and a single crystal or a poly grown in the growing step 11. Sputtering is carried out using the target preparation step 13 for preparing the sputtering target 14 from the crystal 12 and the sputtering target 14 prepared in the target preparation step 13 to form the sputtered film 5c on the surface of the substrate 5a. It suffices if it is manufactured through the film forming step 15.
This example is effective in consideration of the tradeability of the magnetostrictive component 5 alone, in the stage before being incorporated into the vibration power generation device, that is, in the manufacturing stage of the magnetostrictive component 5, and in exerting the effect of the right on the manufactured magnetostrictive component. ..

Hereinafter, the present invention will be described in more detail based on the embodiments shown in the accompanying drawings.
◎ Embodiment 1
FIG. 2A is an explanatory diagram showing the overall configuration of the vibration power generation device according to the first embodiment.
− Overall configuration of vibration power generation device −
In the figure, a vibration power generation device 1 includes a support frame 20 as a vibrating body that receives and propagates vibrations from a vibration source 3, and a magnet 30 as a magnetic field acting means that applies a magnetic field to at least a part of the support frame 20. And the magnetostrictive component 5 including the magnetostrictive material, which is provided in the region of the support frame 20 where the magnetic field is applied by the magnet 30, and is wound around the magnetostrictive component 5, and the electromagnetic induction depends on the strain of the magnetostrictive material of the magnetostrictive component 5. And a coil 6 to operate.

<Support frame>
In this example, the support frame 20 is composed of an elastic plate member 21 made of a magnetic material such as SUS having a substantially U-shaped cross section, and one arm part 22 of the elastic plate member 21 is fixed as a fixing part 20A to an installation location (not shown). In addition, the other arm portion 23 extending from the one arm portion 22 via the bending portion 24 is made to function as the movable portion 20B capable of vibrating. Further, in this example, the other arm portion 23 that is the movable portion 20B has the extension portion 25 on the side opposite to the bending portion 24 as compared with the one arm portion 22 that is the fixed portion. There is a positional relationship in which the vibration from the vibration source 3 is applied to the tip of the.

<Magnet>
Further, in this example, the magnet 30 is installed on the one arm portion 22 of the support frame 20, and the magnet 30 is a permanent magnet (for example, a neodymium magnet) having upper and lower magnetic poles N and S. An action region of the magnetic field G by the magnet 30 is formed in a portion of the other arm portion 23 of the armature 20 which is located almost directly above the magnet 30 in the one arm portion 22 via the curved portion 24. ..
<magnetostrictive parts>
Further, in this example, the elongated rectangular plate-shaped magnetostrictive component 5 manufactured by the manufacturing method described later is installed in the magnetic field G acting region of the other arm 23 of the support frame 20 by the magnet 30. In particular, in this example, as shown in FIGS. 2A and 2B, the other arm 23 is provided with a recess 40 capable of accommodating the magnetostrictive component 5, and the recess 40 is provided with a recess 40 of the magnetostrictive component 5. A step portion 41 that supports both end portions in the longitudinal direction is formed, and the magnetostrictive component 5 is fixedly installed on the step portion 41.
<coil>
In addition, in this example, the coil 6 is evenly wound around the magnetostrictive component 5, and a part of the coil 6 wound around the magnetostrictive component 5 is accommodated in the recess 40 together with the magnetostrictive component 5, and the coil 6 The part is arranged outside the recess 40.

<weight>
Further, in this example, a resonance frequency adjusting weight 50 is provided on the extension portion 25 of the other arm portion 23 of the support frame 20. The weight may be fixed by its own magnetic force by using a magnet, for example, or may be fixed by a separate fastener such as a screw. Further, the weight of the weight 50 can be appropriately adjusted, and the installation position of the weight 50 may be variably set as necessary.
<Power generation take-out structure>
Further, in the present example, the electrode 60 is provided in the vicinity of the coil 6 in the other arm portion 23 of the support frame 20, the wiring 61 from both ends of the coil 6 is drawn to the outside via the electrode 60, and the magnetostrictive component 5 is formed. The AC induction voltage from the coil 6 which electromagnetically induces depending on the strain of the magnetostrictive material is connected to a rectification booster circuit 62 which is boosted to a predetermined level after rectification, and the rectification booster circuit 62 outputs a power generation output E of a predetermined level. Is obtained.

-Manufacturing method of magnetostrictive component-
In this example, the magnetostrictive component 5 is manufactured by the following manufacturing method.
<Growing process>.
In this example, a so-called Czochralski method is used to grow a single crystal Z made of a magnetostrictive material.
Specifically, as shown in FIG. 3A, after a raw material M made of a magnetostrictive material such as Fe-Ga, Fe-Co, or Fe-Dy-Tb is put into the crucible 70, the high-frequency coil is inserted. At 71, the crucible 70 is subjected to high-frequency induction heating to keep the raw material in the crucible 70 in a molten state, and then a seed crystal (not shown) is attached to the tip of a liftable pulling shaft 72 installed above the crucible 70. The operation of mounting and raising the pulling shaft 72 while rotating the seed crystal while adjusting the temperature of the raw material in the crucible 70 by bringing the seed crystal into contact with the melted raw material in the crucible 70 by making the pulling shaft 72 effective By doing so, the ingot-shaped single crystal Z may be grown.
Here, as the magnetostrictive material, all have a large magnetostriction constant and are preferable in terms of generating power even with weak vibration, but Fe-Dy-Tb has the highest magnetostriction constant, but is very hard and difficult to meet, Fe-Ga and Fe-Co contain 70 to 80% of Fe, and have a hardness close to that of Fe, so that workability is easier than that of Fe-Dy-Tb.
In this example, the Czochralski method is used to grow the single crystal Z, but it goes without saying that the vertical Bridgman method or the floating zone method may be adopted. Although the single crystal Z has a larger magnetostriction constant, a polycrystal may be grown.

<Target manufacturing process>
Next, as shown in FIG. 3B, the sputtering target 14 is manufactured from the ingot-shaped single crystal Z.
In this example, a disk-shaped target material 81 is cut out from a cylindrical portion Za of an ingot-shaped single crystal Z, and a back plate 82 is attached to the back surface of the target material 81 to produce a sputtering target 14 capable of sputtering. To do.
Therefore, in the conventional method (method in which a strip-shaped magnetostrictive crystal is cut out from an ingot-shaped single crystal), chips are generated at the time of cutting, and most of the cylindrical portion of the ingot-shaped single crystal is wasted. However, since the magnetostrictive crystal is fragile, it is difficult to machine it and the electric discharge machining is used, which causes the increase in the processing cost of the magnetostrictive crystal. However, these problems can be improved.

<Film forming process>
Next, as shown in FIG. 3C, after the sputtering target 14 is installed in the sputtering device 16, sputtering is performed on the base plate that will be the base 5 a of the magnetostrictive component 5, and the surface of the base 5 a Then, a sputtered film 5c having a predetermined thickness is formed.
Here, as the base material 5a, a plate material having elasticity made of metal or resin is used.
In the present example, the sputtering device 16 may be appropriately selected such as a magnetron sputtering device or an ion beam sputtering device. If the magnetostrictive material is Fe—Ga or Fe—Co, the sputtering target 14 contains 70% Fe. Since it contains -80%, it is electrically conductive, and either DC power supply or RF power supply may be used as the power supply. Further, the sputtering film 5c may be formed in an argon gas atmosphere.
Further, in this example, the thickness t1 of the sputtered film 5c may be selected to be 5 μm or more and 100 μm or less. If the thickness is less than 5 μm, the magnetostriction constant is small and there is a concern that the power generation voltage will not be generated. Further, the generated voltage tends to increase as the thickness increases, but if it exceeds 100 μm, it tends to be saturated.

Further, in this example, as shown in FIG. 2B, an auxiliary film 5b different from a magnetostrictive material is formed as a base of the sputtered film 5c by performing sputtering by a sputtering device, for example.
Here, the orientation of the sputtered film 5c is preferably the directional index [001], and the orientation of the auxiliary film 5b is preferably the directional index [100]. For example, a Si or MgO film is adopted. It has been confirmed that the orientation of the sputtered film 5c made of a magnetostrictive material tends to be more improved in such a mode in which the auxiliary film 5b is used as the base of the sputtered film 5c, as compared with the case where the auxiliary film 5b is not used. There is. The thickness t2 of the auxiliary film 5b may be appropriately selected, but it is not necessary to increase the thickness because it is formed in order to induce the orientation of the sputtered film 5c formed thereon, and the thickness t5 is about 5 to 100 nm. Is preferred.
Further, in this example, the annealing treatment, which is a heat treatment, is effective for improving the crystallinity of the sputtered film 5c of the magnetostrictive component 5. This annealing treatment may be performed together with the growing process or the film forming process. For example, by performing heat treatment at a temperature of 100 to 300° C. for about 1 to 4 hours, the strain in the single crystal or in the sputtered film 5c is reduced. It is presumed that the stress in the crystal is relaxed and the orientation is improved accordingly.

In such a film forming process, since the sputtered film 5c of the magnetostrictive component 5 is formed by using the sputtering target 14, the sputtered film 5c of the magnetostrictive component 5 has uniform characteristics, and the orientation of the magnetostrictive material and Those with excellent dispersion uniformity can be mass-produced.
Therefore, unlike the conventional method, the processing cost is not unnecessarily increased, and a large quantity of good quality magnetostrictive components 5 can be manufactured.
Since the sputtered film 5c is formed in conformity with the shape of the base material 5a, film formation on both sides and film thickness on the front and back sides should be changed to achieve compression and tension compatible with the vibration source. Is also possible. If a large installation area of the magnetostrictive component 5 is secured with respect to the support frame 20, it is possible to increase the amount of power generation from the magnetostrictive component 5 by that amount.

-Method of manufacturing vibration power generation device and operation example-
After the magnetostrictive component 5 is manufactured by the manufacturing method described above, the magnet 30 and the weight 50 are installed on the support frame 20, the coil 6 having a predetermined number of turns is wound around the magnetostrictive component 5, and the magnetostrictive component 5 with the coil 6 is supported on the support frame. It may be installed in the recess 40 of 20.
As described above, if the magnetostrictive component 5 having a large magnetostriction constant is mounted on the vibration power generation device 1, the vibration from the vibration source 3 is propagated to the support frame 20, and thus the magnetostrictive component 5 mounted on the support frame 20. When the magnetostrictive material of the sputtered film 5c is distorted with a regular orientation, a large induction voltage is generated in the coil 6 due to electromagnetic induction depending on the distortion. Therefore, a high power generation output from the rectification booster circuit 62 can be obtained.

◎ Embodiment 2
FIG. 4 shows a main part of the vibration power generation device according to the second embodiment.
In the figure, the vibration power generation device 1 includes a support frame 20, a magnet 30, a magnetostrictive component 5 (manufactured by the manufacturing method of the first embodiment), and a coil 6, as in the first embodiment. Unlike the first embodiment, the slide switch 100 is provided on the flexible rod 101 near the tip of one arm 22 of the support frame 20, and the tip position of the other arm 23 is set to the tip position of the one arm 22. It is arranged closer to the curved portion 24 than the curved portion 24, and the tip of the other arm portion 23 of the support frame 20 is pressed from above by the slide switch 100 described above, and the other arm portion is provided on one arm portion 22 of the support frame 20. A biasing spring 102 that biases 23 upward is provided. The same components as those in the first embodiment are designated by the same reference numerals as those in the first embodiment, and detailed description thereof will be omitted here.
According to the present embodiment, when slide switch 100 is moved away from the other arm portion 23, the pressing of the tip of the other arm portion 23 by slide switch 100 is released accordingly. Then, the other arm portion 23 of the support frame 20 is biased upward by the biasing spring 102, so that the movable portion 20B (the other arm portion 23+the bending portion 24) of the support frame 20 vibrates greatly. As a result, a large vibration is propagated to the magnetostrictive component 5 mounted on the support frame 20, and the strain of the magnetostrictive material of the magnetostrictive component 5 increases correspondingly, and the induced voltage from the coil 6 due to electromagnetic induction is increased. The vibration power generation device 1 can obtain a large power generation output.
In this example, the slide switch 100 supporting the flexible rod 101 and the biasing spring 102 are used as the vibration source. However, instead of the slide switch 100 supporting the flexible rod 101, the slide switch 100 supporting the flexible rod 101 is supported by a coil spring. It is also possible to apply a large vibration to the movable portion 20B of the support frame 20 by pressing the tip of the other arm portion 23 of the support frame 20 with the pushed push button and pushing down the push button to release it.

◎ Embodiment 3
FIG. 5A shows a main part of the vibration power generation device according to the third embodiment.
In the figure, the basic configuration of the vibration power generation device 1 includes a support frame 20, a magnetostrictive component 5 and a coil 6 as in the first embodiment, but unlike the first embodiment, the support frame 20 and the The configuration of the magnetic field acting means is different from that of the first embodiment. The same components as those in the first embodiment are designated by the same reference numerals as those in the first embodiment, and the detailed description thereof is omitted here.
In this example, the support frame 20 has a substantially U-shaped elastically deformable frame body 121 made of resin. Here, as the resin material 122, polyethylene, which is rich in corrosion resistance, heat resistance, mechanical strength and flexibility, olefin resin such as polypropylene, polyamide resin made of nylon 12, nylon 6 or the like, polyphenylene sulfide (PPS). ) Resin is used.
Further, magnetic powder 123 is dispersed in the frame body 121. As the magnetic powder 123, ferrite-based, neodymium-based, samarium-cobalt-based, samarium-iron-nitrogen-based particles having a particle size of about 1 to 10 μm are used. The magnetic powder 123 is uniformly mixed with the resin material 122 before injection-molding the support frame 20, and then uniformly dispersed in the resin by injection molding.
Further, in this example, since the magnetic powder 123 is dispersed in the support frame 20 as the magnetic field acting means, the magnetostriction in the other arm portion 23 of the pair of arm portions 22 and 23 of the support frame 20. N-pole and S-pole magnetized portions 124 and 125 are formed in a region sandwiching the installation location of the component 5, and a magnetic field G is formed at the installation location of the magnetostrictive component 5 between the magnetization portions 124 and 125. It has become.
Furthermore, in this example, as shown in FIG. 5B, the other arm portion 23 of the support frame 20 is provided with a recess 40 in which the magnetostrictive component 5 is accommodated. 5 are accommodated. Then, in the present example, unlike the first embodiment, the coil 6 is wound around the other arm portion 23 of the support frame 20 and the magnetostrictive component 5 by a predetermined number, and depends on the strain of the magnetostrictive material of the magnetostrictive component 5. The coil 6 is electromagnetically induced.
As described above, in the present embodiment, the support frame 20 has the resin frame main body 121 in which the magnetic powder 123 is dispersed, and further, the external magnet (the magnet 30 of the first and second embodiments) is used as the magnetic field acting means. By adopting the magnetizing portions 124 and 125 without using a magnetizing portion), it is possible to reduce the weight of the vibration power generation device 1 and to reduce the size because a magnet installation space is not required. It is possible.

◎ Embodiment 4
FIG. 6A shows a main part of the vibration power generation device according to the fourth embodiment.
In the figure, the basic configuration of the vibration power generation device 1 includes a support frame 20 having a resin frame body 121 in which magnetic powder 123 is dispersed, a magnetostrictive component 5, and a coil 6, as in the third embodiment. However, unlike the third embodiment, as magnetic field acting means, instead of the magnetizing portions 124 and 125, small magnets 131 and 132 having N and S poles are embedded in the frame body 121. The magnetic field G is made to act on the installation location of 5.
Therefore, also in the present embodiment, similarly to the third embodiment, the support frame 20 has the resin frame main body 121 in which the magnetic powder 123 is dispersed, and moreover, the external magnet ( Since the embedded small magnets 131 and 132 are adopted without using (corresponding to the magnet 30 of the first and second embodiments), the vibration power generation device 1 can be reduced in weight, and the installation space of the magnet, etc. Since it is unnecessary, the size can be reduced.
In the present embodiment, the support frame 20 has the resin frame body 121 in which the magnetic powder 123 is dispersed, but the present invention is not limited to this. For example, as shown in FIG. A resin frame body 121 ′ containing no magnetic powder 123 is adopted as the support frame 20, and the small magnets 131 and 132 are embedded in the frame body 121 ′, whereby the magnetic field G is placed at the installation location of the magnetostrictive component 5. It is also possible to make it act.

◎Example 1
As the growing step, a Fe—Ga single crystal having a diameter of 2 inches and a length of 25 mm was grown by the VB method (vertical Bridgman method).
It was cut to a thickness of 10 mm with a wire saw, and the surface was polished to a surface roughness Ra of 1 μm. It was melted and bonded to a 2-inch diameter copper backing plate using indium.
Next, the MgO and Fe-Ga single crystal targets were set in a DC magnetron sputtering device (manufactured by Shibaura Seisakusho, model CFS-4ES). A 3-inch diameter MgO target and a 2-inch diameter Fe—Ga target were mounted, and six aluminum plates (2×10×0.5 mm) for film formation were mounted. The distance between the sputtering target and the Al plate was 100 mm. First, while heating the substrate temperature to 150° C., a mixed gas of argon gas and oxygen was supplied as a reactive gas (flow rate of argon gas was 15 sccm, flow rate of oxygen was 10 sccm), and a MgO film was formed to a thickness of 20 nm. .. Subsequently, Fe-Ga was sputtered with only argon gas to form a film having a thickness of 1.3 μm.
The ultimate vacuum at the time of sputtering was 6.5×10 −3 Pa, the degree of vacuum after gas introduction was 3×10 −1 Pa, the sputtering output was 200 W, the MgO film formation time was 5 minutes, and the composition of Fe—Ga was formed. The membrane time was 35 minutes.
When the half width of the obtained Fe—Ga film was measured by X-ray diffraction (XRD), the (001) orientation was observed at 14.4°.
This material was used to fix to a SUS frame shown in the figure, and a copper wire having a diameter of 0.3 mm was wound around it 2000 times. The magnetic field was a small neodymium magnet.
The weight was adjusted so that the maximum voltage was obtained (resonance frequency) by placing 1 g of weight on the tip.
When a vibration having a frequency of 100 Hz and an acceleration of 0.1 G was applied using this device, a peak voltage of 0.25 V was generated.

◎Example 2
Same as Example 1 except that the same substrate and sputtering apparatus as in Example 1 were used, Si was used instead of MgO as the target, and Fe—Co was used instead of Fe—Ga, and the substrate heating temperature under the sputtering conditions was 200° C. A piezoelectric composite substrate was produced under the conditions.
The crystallinity of the obtained Fe-Co thin film was measured by X-ray diffraction (XRD) to find a half-value width. At 18.4°, a (001) orientation was observed.
This material was used for fixing to a SUS frame, and a copper wire having a diameter of 0.3 mm was wound 2000 times on the frame.
The bias magnetic field was generated by placing a small neodymium magnet.
The weight was adjusted so that the maximum voltage was obtained (resonance frequency) by placing 1 g of weight on the tip. When a vibration having a frequency of 100 Hz and an acceleration of 0.1 G was applied using this device, a peak voltage of 0.2 V was generated.

◎Example 3
Example 1 except that the same substrate and sputtering apparatus as in Example 1 were used, Si was used as the target instead of MgO, and Fe-Dy-Tb was used instead of Fe-Ga, and the substrate heating temperature under the sputtering conditions was 200°C. A piezoelectric composite substrate was produced under the same conditions as above.
The crystallinity of the obtained Fe-Dy-Tb thin film was measured for half width by X-ray diffraction (XRD). As a result, a (001) orientation was observed at 16.4°.
This material was used for fixing to a SUS frame, and a copper wire having a diameter of 0.3 mm was wound 2000 times on the frame.
The bias magnetic field was generated by placing a small neodymium magnet.
The weight was adjusted so that the maximum voltage was obtained (resonance frequency) by placing 1 g of weight on the tip. When a vibration having a frequency of 100 Hz and an acceleration of 0.1 G was applied using this device, a peak voltage of 0.6 V was generated.

◎Comparative example 1
The machining cost of the electric discharge machining of the Fe-Ga crystal into a size of length 10 x width 2 x thickness 0.5 mm was 2,000 yen.

Since the vibration power generation device according to the present invention is equipped with a highly mass-producible magnetostrictive component excellent in the orientation and dispersion uniformity of the magnetostrictive material, it is possible to reduce the price of the magnetostrictive component. The price of the vibration power generation device can be reduced. Therefore, it can be effectively used for a sensor of a communication module for IoT and a power supply for communication which are required to be low in price.

DESCRIPTION OF SYMBOLS 1 Vibration power generation device 2 Vibrated body 3 Vibration source 4 Magnetic field acting means 5 Magnetostrictive component 5a Base material 5b Auxiliary film 5c Sputtered film 6 Coil 11 Growth process 12 Single crystal or polycrystal 13 Target creation process 14 Sputtering target 15 Film formation process 16 Sputtering device E Power generation output G Magnetic field 20 Support frame 20A Fixed part 20B Movable part 21 Elastic plate material 22 One arm part 23 One arm part 23 The other arm part 24 Bent part 25 Extension part 30 Magnet 40 Recessed part 41 Step part 50 Weight 60 Electrode 61 Wiring 62 Rectifying and boosting circuit 70 Crucible 71 High frequency coil 72 Pulling shaft 81 Target material 82 Back plate Z Ingot-shaped single crystal Za Cylindrical part 100 Slide switch 101 Rod 102 Energizing spring 121 Frame body 122 Resin material 123 Magnetic powder 124 Magnetizing part 125 Magnetic part 131 Small magnet 132 Small magnet

Claims (9)

A vibrating body that receives and propagates vibrations from a vibration source,
Magnetic field acting means for acting a magnetic field on at least a part of the vibrated body,
A magnetostrictive component including a magnetostrictive material, which is provided in a magnetic field acting area of the vibrating body by the magnetic field acting means,
A coil wound around the magnetostrictive component, and a coil for electromagnetic induction depending on the strain of the magnetostrictive material of the magnetostrictive component, and in producing a vibration power generation device,
The magnetostrictive component is
A growing step of growing a single crystal or a polycrystal made of a magnetostrictive material,
A target production step of producing a sputtering target from the single crystal or polycrystal grown in the growth step,
A vibration power generation device characterized by being formed through a film forming step of forming a sputtered film on a surface of a base material by performing sputtering using the sputtering target prepared in the target preparing step. Production method. The method for manufacturing the vibration power generation device according to claim 1,
The method of manufacturing a vibration power generation device, wherein the growing step uses any one of the Czochralski method, the vertical Bridgman method, and the floating zone method. The method for manufacturing a vibration power generation device according to claim 1 or 2,
The method for manufacturing a vibration power generation device, wherein the magnetostrictive material is any one of Fe-Ga, Fe-Co, and Fe-Dy-Tb. The method for manufacturing a vibration power generation device according to claim 1,
The method of manufacturing a vibration power generation device, wherein the sputtered film is formed to a thickness of 5 to 100 μm. The method for manufacturing a vibration power generation device according to claim 1,
In the film forming step, before forming the sputtered film, an auxiliary film having an orientation property that increases a magnetostriction constant of the sputtered film is formed as a base of the sputtered film, which is a vibration power generation device. Manufacturing method. The method for manufacturing a vibration power generation device according to claim 5,
The method for manufacturing a vibration power generation device, wherein the orientation of the sputtered film has a directional index of [001], and the orientation of the auxiliary film has a directional index of [100]. The method for manufacturing a vibration power generation device according to any one of claims 1 to 6,
The method for manufacturing a vibration power generation device, wherein the base material of the magnetostrictive component is made of a metal or resin plate material having elasticity. The method for manufacturing a vibration power generation device according to claim 1,
A method for manufacturing a vibration power generation device, characterized in that at least one of the growing step and the film forming step includes an annealing treatment for performing a heat treatment at a predetermined temperature and time condition. When manufacturing magnetostrictive components used in vibration power generation devices,
A growing step of growing a single crystal or a polycrystal made of a magnetostrictive material,
A target production step of producing a sputtering target from the single crystal or polycrystal grown in the growth step,
Manufacture of a magnetostrictive component characterized by being manufactured through a film forming step of forming a sputtered film on the surface of a base material by performing sputtering using the sputtering target prepared in the target preparing step. Method.

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