JPH0941100A - Iron-chromium-silicon base alloy and its production and strain gauge - Google Patents
Iron-chromium-silicon base alloy and its production and strain gaugeInfo
- Publication number
- JPH0941100A JPH0941100A JP22959195A JP22959195A JPH0941100A JP H0941100 A JPH0941100 A JP H0941100A JP 22959195 A JP22959195 A JP 22959195A JP 22959195 A JP22959195 A JP 22959195A JP H0941100 A JPH0941100 A JP H0941100A
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- gauge
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- small amount
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Links
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 108
- 239000000956 alloy Substances 0.000 title claims abstract description 108
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- XEVZIAVUCQDJFL-UHFFFAOYSA-N [Cr].[Fe].[Si] Chemical compound [Cr].[Fe].[Si] XEVZIAVUCQDJFL-UHFFFAOYSA-N 0.000 title 1
- 239000010409 thin film Substances 0.000 claims abstract description 52
- 239000011888 foil Substances 0.000 claims abstract description 50
- 229910052802 copper Inorganic materials 0.000 claims abstract description 48
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 48
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 47
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 47
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 47
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 47
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 46
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 46
- 229910052737 gold Inorganic materials 0.000 claims abstract description 45
- 229910052718 tin Inorganic materials 0.000 claims abstract description 44
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 42
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 42
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 41
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 41
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 40
- 229910052709 silver Inorganic materials 0.000 claims abstract description 40
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 39
- 229910052738 indium Inorganic materials 0.000 claims abstract description 39
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 37
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 36
- 229910052796 boron Inorganic materials 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 239000000203 mixture Substances 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 238000001816 cooling Methods 0.000 claims abstract description 6
- -1 and <=1% each of B Inorganic materials 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 57
- 239000012535 impurity Substances 0.000 claims description 50
- 229910019819 Cr—Si Inorganic materials 0.000 claims description 45
- 230000001590 oxidative effect Effects 0.000 claims description 32
- 229910052790 beryllium Inorganic materials 0.000 claims description 30
- 239000002994 raw material Substances 0.000 claims description 17
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000009966 trimming Methods 0.000 claims description 11
- 238000004070 electrodeposition Methods 0.000 claims description 7
- 238000007772 electroless plating Methods 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 238000005482 strain hardening Methods 0.000 claims description 6
- 229910017060 Fe Cr Inorganic materials 0.000 claims description 3
- 229910002544 Fe-Cr Inorganic materials 0.000 claims description 3
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910017112 Fe—C Inorganic materials 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 abstract description 7
- 238000000137 annealing Methods 0.000 abstract description 3
- 238000011282 treatment Methods 0.000 abstract description 3
- 238000005097 cold rolling Methods 0.000 abstract description 2
- 238000005098 hot rolling Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 39
- 239000011651 chromium Substances 0.000 description 33
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 33
- 239000010949 copper Substances 0.000 description 28
- 239000010955 niobium Substances 0.000 description 28
- 239000010931 gold Substances 0.000 description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 25
- 239000010936 titanium Substances 0.000 description 25
- 230000000694 effects Effects 0.000 description 7
- 239000011572 manganese Substances 0.000 description 7
- 229910052748 manganese Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910017110 Fe—Cr—Co Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 229910002060 Fe-Cr-Al alloy Inorganic materials 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010622 cold drawing Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000003832 thermite Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measurement Of Force In General (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、Ｆｅ（鉄），Ｃｒ（ク
ロム），Ｓｉ（シリコン）を主成分とし、副成分として
Ｎｉ（ニッケル），Ｃｏ（コバルト），Ｍｏ（モリブデ
ン），Ｗ（タングス），Ｖ（バナジウム），Ｎｂ（ニオ
ブ），Ｔａ（タンタル），Ｍｎ（マンガン），Ｃｕ
（銅），Ｔｉ（チタン），Ｚｒ（ジルコニウム），Ｈｆ
（ハフニウム），Ａｇ（銀），Ａｕ（金），Ａｌ（アル
ミニウム），Ｇｅ（ゲルマニウム），白金族元素，Ｓｎ
（錫），Ｓｂ（アンチモン），Ｇａ（ガリウム），Ｉｎ
（インジウム），希土類元素，Ｂｅ（ベリリウム），Ｂ
（ボロン），Ｃ（炭素）およびＮ（窒素）のうち１種ま
たは２種以上の合計０．００１〜５０％とからなるＦｅ
−Ｃｒ−Ｓｉ基合金およびその製造方法、ならびにこの
合金を使用したストレインゲージに関するもので、その
目的とするところはゲージ率が２以上で、且つ比電気抵
抗の温度係数が（−１０〜１０）×１０−４／℃以内を
有し良好な加工性を具備する線材および箔材ならびに薄
膜を提供するにある。また、該合金を使用して作成され
た線材、箔材および薄膜よりなるストレインゲージを提
供するにある。BACKGROUND OF THE INVENTION The present invention is mainly composed of Fe (iron), Cr (chromium), and Si (silicon), and has secondary components of Ni (nickel), Co (cobalt), Mo (molybdenum), and W (molybdenum). Tangs), V (vanadium), Nb (niobium), Ta (tantalum), Mn (manganese), Cu
(Copper), Ti (titanium), Zr (zirconium), Hf
(Hafnium), Ag (silver), Au (gold), Al (aluminum), Ge (germanium), platinum group element, Sn
(Tin), Sb (antimony), Ga (gallium), In
(Indium), rare earth element, Be (beryllium), B
Fe consisting of one or more of (boron), C (carbon) and N (nitrogen) and a total of 0.001 to 50%.
The present invention relates to a -Cr-Si-based alloy, a method for producing the same, and a strain gauge using this alloy. The purpose is to have a gauge factor of 2 or more and a temperature coefficient of specific electrical resistance (-10 to 10). × 10 -4 / good processability and comprising wire and has within ℃ to provide a Hakuzai and thin. Another object of the present invention is to provide a strain gauge composed of a wire material, a foil material and a thin film produced by using the alloy.
【０００２】[0002]
【従来の技術】ストレインゲージは、一般に弾性歪によ
ってゲージ細線またはゲージ箔の電気抵抗が変化する現
象を利用して、逆に抵抗変化を測定することによって歪
の量あるいは応力を計測したり歪や応力の変換機器にも
ちいられる。例えば、生産工業におけるストレインセン
サ、重量計測、加速度計や各種機器量−電気量変換機
器、土木工業における土圧計、建築業・エネルギー関連
業における圧力計や撓み量計測、航空・宇宙・鉄道・船
舶における各種応力・歪計測ばかりでなく民生用として
の商用秤や各種セキュリティ機器等にも多く利用されて
いる。2. Description of the Related Art Strain gauges generally use the phenomenon that the electrical resistance of a gauge wire or gauge foil changes due to elastic strain, and conversely measure the amount of strain or stress by measuring the change in resistance. It is also used as a stress converter. For example, strain sensors in the production industry, weight measurement, accelerometers and various equipment quantity-electricity conversion equipment, earth pressure gauges in the civil engineering industry, pressure gauges and flexure measurement in the construction / energy related industries, aviation / space / railroads / ships. It is widely used not only for various stress / strain measurement in Japan, but also for commercial scales and various security devices for consumer use.
【０００３】ストレインゲージは、その構造が金属細線
（１３〜２５μｍ）または金属箔（３〜５μｍ）をグリ
ッド状あるいはロゼット状に配置してなり、またその使
用法としては前期ゲージを被測定物に接着剤で貼付し、
被測定物に生じた歪をゲージの抵抗変化から間接的に測
定するものである。ストレインゲージの感度は、ゲージ
率Ｋによってきまり、Ｋ（２０℃）の値は一般に次の式
で表される。The strain gauge has a structure in which fine metal wires (13 to 25 μm) or metal foil (3 to 5 μm) are arranged in a grid or rosette shape. Stick with an adhesive,
The strain generated in the object to be measured is indirectly measured from the change in resistance of the gauge. The sensitivity of the strain gauge depends on the gauge factor K, and the value of K (20 ° C.) is generally expressed by the following equation.
【０００４】[0004]
【数１】 ここで、Ｒはゲージ細線の全抵抗 σはゲージの細線のポアソン比 ρはゲージ細線の比電気抵抗 ｌはゲージ細線の全長 である。この式ではσは一般の金属・合金ではほぼ０．
３であるから、右辺第１項と第２項の合計は約１．６で
一定値となる。したがってゲージ率を大きくするために
は、上式の右辺第３項の（Δρ／ρ）・（Δｌ／ｌ）
−１が大きいことが必須条件である。すなわち、材料に
引っ張り変形を与えた時、材料の長さ方向の電子構造が
大幅に変化して、比電気抵抗の変化量Δρ／ρが増加す
ることによる。また、ストレインゲージ素子としては、
素子間のバラツキが少ないことも重要であり、ゲージ率
ロット間のばらつきΔＫは、次式で評価する。[Equation 1] Where R is the total resistance of the gauge wire, σ is the Poisson's ratio of the gauge wire, ρ is the specific electrical resistance of the gauge wire, and l is the total length of the gauge wire. In this formula, σ is almost 0 for ordinary metals and alloys.
Therefore, the sum of the first term and the second term on the right side is about 1.6, which is a constant value. Therefore, in order to increase the gauge factor, (Δρ / ρ) · (Δl / l) in the third term on the right side of the above equation
It is an essential condition that -1 is large. That is, when the material is subjected to tensile deformation, the electronic structure in the longitudinal direction of the material changes significantly, and the amount of change Δρ / ρ in the specific electric resistance increases. Moreover, as a strain gauge element,
It is also important that there is little variation between the elements, and the variation ΔK between gauge lots is evaluated by the following formula.
【０００５】[0005]
【数２】 [Equation 2]
【０００６】ストレインゲージ素子用材料として現在最
も多く使用されている材料は、Ｃｕ−Ｎｉ合金である。
この合金は、比電気抵抗温度係数Ｃｆが極めて小さい特
徴を有する反面、ゲージ率Ｋおよび比電気抵抗ρが小さ
く、また対銅熱起電力Ｅｍｆが大きいために、高感度・
高安定性ストレインゲージ用合金としては使用できな
い。さらにこの合金の問題として、ゲージ特性のばらつ
きが数％あることも製品の互換性に対して大きな問題で
あった。The most frequently used material for strain gauge elements at present is a Cu--Ni alloy.
This alloy, while the specific electric resistance temperature coefficient C f has a very small features, gage factor K and the electrical resistivity ρ is small, also because of the large TaidonetsuOkoshi power E mf, high sensitivity and
It cannot be used as an alloy for high stability strain gauges. Further, as a problem of this alloy, the variation of the gauge characteristics is several%, which is a big problem for the compatibility of products.
【０００７】この材料の他に、ゲージ率Ｋが大きな材料
には半導体の炭素（Ｃ）、シリコン（Ｓｉ）やゲルマニ
ウム（Ｇｅ）等が知られている。しかしこれら半導体の
場合、Ｋが数１０〜１７０で非常に大きいが、その値は
正および負を示すだけでなく、Ｋの異方性が大きく安定
性に欠けること、また機械的強度が劣るなどの欠点があ
るために、特殊な小型圧力変換機器に応用化されている
程度である。In addition to this material, semiconductors such as carbon (C), silicon (Si) and germanium (Ge) are known as materials having a large gauge factor K. However, in the case of these semiconductors, K is very large at several 10 to 170, but the value not only shows positive and negative values, but also has large anisotropy of K and lacks stability, and has poor mechanical strength. However, it is only applied to special small pressure transducers.
【０００８】Ｆｅ−Ｃｒ−Ｃｏ系やＦｅ−Ｃｒ−Ｃｏ
（Ｍｏ，Ｗ，Ｎｂ，Ｔａ）多元系合金などでは、Ｋが加
工状態で４また高温処理により１０以上であって、従来
の実用合金Ｃｕ−Ｎｉの２〜５倍の非常に大きい値を示
すので高感度ゲージの要求には応えられそうである。
（特公昭４５−１３２２９号、特開昭６１−１５９１４
号、特公平２−１３０２３号）。しかし、これらの合金
のＫは、ロット間のばらつきが大きく、約５〜７％を示
しゲージの互換性にはやや難があり、高安定性ゲージに
は不向きである。Fe-Cr-Co system and Fe-Cr-Co
In the case of (Mo, W, Nb, Ta) multi-component alloys and the like, K is 4 or more in the worked state and 10 or more by the high temperature treatment, which is a very large value of 2 to 5 times that of the conventional practical alloy Cu-Ni. Therefore, it seems that the demand for high-sensitivity gauges can be met.
(JP-B-45-13229, JP-A-61-15914)
No., Japanese Patent Publication No. 213023). However, the K of these alloys has large lot-to-lot variability, is about 5 to 7%, and there is some difficulty in gauge compatibility, making it unsuitable for high stability gauges.
【０００９】また、抵抗温度係数が小さい材料として開
発されたＦｅ−Ｃｒ−Ａｌ基合金は、耐酸化性に劣るだ
けでなく、かなり複雑な加工法で作成しなければならな
いなど多くの問題があった〔特開平５−２１４４９
３〕。以上説明したように、上記公知の材料には一長一
短があり、関連業界から本発明の目的である高いゲージ
率とばらつきの少ないゲージ特性を具備した新規な材料
の要望がなされている。Further, the Fe-Cr-Al based alloy developed as a material having a small temperature coefficient of resistance has many problems such as not only being inferior in oxidation resistance but also being required to be manufactured by a considerably complicated processing method. [JP-A-5-21449
3]. As described above, the known material has advantages and disadvantages, and there is a demand from a related industry for a new material having a high gauge ratio and a gauge characteristic with less variation, which is the object of the present invention.
【００１０】[0010]
【発明が解決しょうとする課題】さて、ストレインゲー
ジは、近年マイクロコンピューターの進歩に伴ってその
応用領域がますます拡大して超精密、小型化および高性
能化にむかっており、特に高感度で安定性を必要とする
圧力変換器やロードセルの他、ロボットの接触センサや
滑りセンサ等の要求が高まってきた。これらの各種セン
サ用ストレインゲージに対しては高感度で良好な安定性
を有する素材が緊急に求められている。[Problems to be Solved by the Invention] Strain gauges have been expanding their application fields with the progress of microcomputers in recent years and are aiming for ultra-precision, miniaturization and high performance. In addition to pressure transducers and load cells that require stability, there are increasing demands for robot contact sensors and slip sensors. Materials having high sensitivity and good stability are urgently required for these strain gauges for various sensors.
【００１１】これらの要望に応えられる材料としては、 １．ゲージ率が２以上で大きいこと。 ２．ゲージ率のロット間のバラツキが小さいこと。 ３．比電気抵抗の温度係数が小さいこと。 ４．比電気抵抗が大きいこと。 ５．対銅熱起電力が小さいこと。 ６．加工性がよく、機械的性質が良好であること。 ７．安価なこと。 等の性質を具備していることが望まれる。Materials that can meet these demands are: Gauge rate of 2 or more is large. 2. The gauge variation between lots is small. 3. The temperature coefficient of specific electrical resistance is small. 4. High specific electrical resistance. 5. Small thermoelectromotive force against copper. 6. Good workability and good mechanical properties. 7. Be cheap. It is desirable to have such properties.
【００１２】[0012]
【発明が解決するための手段】本発明は、上記の特性を
具備した材料の研究を幾多行い、Ｆｅ−Ｃｒ−Ｓｉ基合
金がストレインゲージ用材料に適していることを見い出
したのである。本発明を製造するには、重量比にてＣｒ
５〜３０％、Ｓｉ０．５１〜７％と、副成分としてＮ
ｉ，Ｃｏのそれぞれ４０％いか、Ｍｏ，Ｗ，Ｖ，Ｎｂ，
Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，Ｚｒ，
Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそれぞれ
７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，希土類元素のそれ
ぞれ５％以下、Ｂｅ３％以下、Ｂ，Ｃ，Ｎのそれぞれ１
％以下のうち１種または２種以上の合計０．００１〜５
０％および残部Ｆｅからなる原料を、必要ならば真空中
において融点以下まで加熱して含有ガスを十分に排気し
た後、好ましくは非酸化性ガス、還元性ガスまたは真空
中において溶解する。また溶融合金を十分に撹拌するこ
とによって、組成が均一化する。次に、適当な形および
大きさの鋳型に鋳造して健全なインゴットを得る。The present invention has conducted a number of studies on materials having the above-mentioned characteristics, and has found that Fe--Cr--Si based alloys are suitable for strain gauge materials. In order to manufacture the present invention, Cr is used in a weight ratio.
5 to 30%, Si 0.51 to 7%, and N as an accessory component
i, Co 40% each, Mo, W, V, Nb,
10% or less of each of Ta, Mn, and Cu, Ti, Zr,
Hf, Ag, Au, Al, Ge, platinum group elements each 7% or less, Sn, Sb, Ga, In, rare earth elements each 5% or less, Be 3% or less, B, C, N each 1
% Or less, total of 1 or 2 or more 0.001-5
A raw material consisting of 0% and the balance Fe is heated to a temperature equal to or lower than the melting point in a vacuum if necessary to sufficiently exhaust the contained gas, and then preferably dissolved in a non-oxidizing gas, a reducing gas or a vacuum. Further, the composition is homogenized by sufficiently stirring the molten alloy. It is then cast into a mold of suitable shape and size to obtain a healthy ingot.
【００１３】このインゴットを、必要ならば高温度、好
ましくは９００℃以上融点以下で適当時間、好ましくは
１分以上１０時間以下加熱して、均質化処理を施すか、
または直ちに鍛造、熱間圧延などの熱間加工により所望
の丸棒あるいは板材となし、ついで必要ならば４００℃
以上融点以下の温度で軟化焼鈍を施しながら、これをス
エージングマシン、線引加工機あるいは冷間圧延機など
の冷間加工により、所望の形状、例えば線経０．１ｍｍ
以下の細線および０．１ｍｍ以下のリボン等の線材、厚
さ０．１ｍｍ以下の箔材またはターゲット材などを得
る。さらにこのターゲット材からは、電着、蒸着、無電
解メッキまたはスパってリンク等より選択された方法に
よって真空中あるいは種々なガス雰囲気中で適当な基板
上に所望の形状および厚さの薄膜を形成する。または適
当な形状の薄膜を形成した後所望の形状に打ち抜き、フ
ォトエッチングまたはトリミング加工を施して素子とな
す。さらに必要ならば温度補償として、該素子と直角成
分の素子を同一面内に構築してゲージパターンを形成す
る。さらにこれに電極を構成し、このままで使用する
か、またはこれらの線材、箔材または薄膜を非酸化性ガ
ス、還元性ガスまたは真空中の４００℃以上１２００℃
以下の温度で、適当な時間、好ましくは１分間以上１０
０時間以下加熱後適度な速度で好ましくは１℃／時〜１
００℃／分の速度で冷却することによって、ゲージ率が
２以上で、且つ比電気抵抗の温度係数が（−１０〜１
０）×１０−４／℃以内の値を有するストレインゲージ
用合金の線材、箔材または薄膜が得られる。If necessary, this ingot is heated at a high temperature, preferably 900 ° C. or higher and a melting point or lower, for a suitable period of time, preferably 1 minute or longer and 10 hours or shorter, to carry out homogenization treatment, or
Or immediately by hot working such as forging and hot rolling to form the desired round bar or plate, and then 400 ° C if necessary.
While subjecting to softening annealing at a temperature not lower than the melting point, it is subjected to cold working such as swaging machine, wire drawing machine or cold rolling machine to obtain a desired shape, for example, wire diameter 0.1 mm.
The following thin wire and a wire material such as a ribbon having a thickness of 0.1 mm or less, a foil material having a thickness of 0.1 mm or less, or a target material are obtained. Further, from this target material, a thin film having a desired shape and thickness can be formed on a suitable substrate in a vacuum or in various gas atmospheres by a method selected from electrodeposition, vapor deposition, electroless plating, sparing and the like. Form. Alternatively, a thin film having an appropriate shape is formed, punched into a desired shape, and photoetching or trimming is performed to form an element. Further, if necessary, as a temperature compensation, an element having a component orthogonal to the element is constructed in the same plane to form a gauge pattern. Further, an electrode is formed on this, and it is used as it is, or these wires, foils or thin films are used in a non-oxidizing gas, reducing gas or vacuum at 400 ° C or higher and 1200 ° C or higher.
At the following temperature for a suitable time, preferably 1 minute or more 10
After heating for 0 hours or less, at a moderate rate, preferably 1 ° C / hour to 1
By cooling at a rate of 00 ° C / min, the gauge factor is 2 or more, and the temperature coefficient of the specific electric resistance is (-10 to 1).
A wire, foil or thin film of strain gauge alloy having a value within 0) × 10 −4 / ° C. is obtained.
【００１４】第１発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％および
残部Ｆｅと少量の不純物とからなり、ゲージ率が２以上
で、且つ比電気抵抗の温度係数が（−１０〜１０）×１
０−４／℃以内であることを特徴とするストレインゲー
ジ用Ｆｅ−Ｃｒ−Ｓｉ基合金。The first invention is composed of 5 to 30% by weight of Cr, 0.51 to 7% of Si and the balance Fe and a small amount of impurities, has a gauge factor of 2 or more, and has a temperature coefficient of specific electric resistance of (-10). -10) x 1
Fe-Cr-Si based alloy for strain gauge, characterized in that it is within 0-4 / ° C.
【００１５】第２発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＮｉ，Ｃｏのそれぞれ４０％以下、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，
希土類元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，
Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以上の
合計０．００１〜５０％および残部Ｆｅと少量の不純物
とからなり、ゲージ率が２以上で、且つ比電気抵抗の温
度係数が（−１０〜１０）×１０−４／℃以内であるこ
とを特徴とするストレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基
合金。Second invention: 5 to 30% by weight of Cr, 0.51 to 7% of Si, and 40% or less of each of Ni and Co as auxiliary components, Mo,
W, V, Nb, Ta, Mn, and Cu are each 10% or less, Ti, Zr, Hf, Ag, Au, Al, Ge, and platinum group elements are each 7% or less, Sn, Sb, Ga, In,
5% or less for each rare earth element, 3% or less for Be, B,
Of 1% or less of each of C and N, one or more of 0.001 to 50% in total and the balance Fe and a small amount of impurities, a gauge factor of 2 or more, and a temperature coefficient of specific electrical resistance Fe-Cr-Si based alloy for strain gauges, which is within (-10 to 10) x 10-4 / C.
【００１６】第３発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＮｉ４０％以下，Ｃｏ１７％未満、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，
希土類元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，
Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以上の
合計０．００１〜５０％および残部Ｆｅと少量の不純物
とからなり、ゲージ率が２以上で、且つ比電気抵抗の温
度係数が（−１０〜１０）×１０−４／℃以内であるこ
とを特徴とするストレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基
合金。Third invention: Cr 5 to 30% by weight, Si 0.51 to 7% by weight, Ni 40% or less as auxiliary components, Co 17% or less, Mo,
W, V, Nb, Ta, Mn, and Cu are each 10% or less, Ti, Zr, Hf, Ag, Au, Al, Ge, and platinum group elements are each 7% or less, Sn, Sb, Ga, In,
5% or less for each rare earth element, 3% or less for Be, B,
Of 1% or less of each of C and N, one or more of 0.001 to 50% in total and the balance Fe and a small amount of impurities, a gauge factor of 2 or more, and a temperature coefficient of specific electrical resistance Fe-Cr-Si based alloy for strain gauges, which is within (-10 to 10) x 10-4 / C.
【００１７】第４発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＣｏ４０％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔ
ａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈ
ｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそれぞれ７
％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，希土類元素のそれぞ
れ５％以下、Ｂｅ３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％
以下のうち１種または２種以上の合計０．００１〜５０
％および残部Ｆｅと少量の不純物とからなり、ゲージ率
が２以上で、且つ比電気抵抗の温度係数が（−１０〜１
０）×１０−４／℃以内であることを特徴とするストレ
インゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合金。Fourth invention Cr 5 to 30% by weight, Si 0.51 to 7% by weight, Co 40% or less as an accessory component, Mo, W, V, Nb, T.
10% or less of a, Mn, and Cu, Ti, Zr, and H
f, Ag, Au, Al, Ge, each of the platinum group elements 7
%, Sn, Sb, Ga, In, rare earth elements each 5% or less, Be 3% or less, B, C, N each 1%
One or two or more of the following total 0.001-50
% And the balance Fe and a small amount of impurities, the gauge factor is 2 or more, and the temperature coefficient of the specific electric resistance is (-10 to 1).
0) × 10 −4 / ° C. or less, Fe—Cr—Si based alloy for strain gauge.
【００１８】第５発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％、希土
類元素０．００１〜５％と、副成分としてＮｉ，Ｃｏの
それぞれ４０％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍ
ｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａ
ｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそれぞれ７％以
下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，のそれぞれ５％以下、Ｂ
ｅ３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種
または２種以上の合計０．００１〜５０％および残部Ｆ
ｅと少量の不純物とからなり、ゲージ率が２以上で、且
つ比電気抵抗の温度係数が（−１０〜１０）×１０−４
／℃以内であることを特徴とするストレインゲージ用Ｆ
ｅ−Ｃｒ−Ｓｉ基合金。Fifth invention Cr 5 to 30% by weight, Si 0.51 to 7%, rare earth element 0.001 to 5%, and 40% or less of Ni and Co respectively as auxiliary components, Mo, W, V, Nb, Ta, M
10% or less of each of n and Cu, Ti, Zr, Hf, A
g, Au, Al, Ge, platinum group elements each 7% or less, Sn, Sb, Ga, In, each 5% or less, B
e 3% or less, 1% or less of B, C, and N each 1% or less, 0.001 to 50% in total and the balance F
e and a small amount of impurities, the gauge factor is 2 or more, and the temperature coefficient of specific electrical resistance is (-10 to 10) x 10-4.
F for strain gauges, characterized by being within / ° C
e-Cr-Si based alloy.
【００１９】第６発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％および
残部Ｆｅと少量の不純物とからなる合金組成の原料を、
非酸化性ガス、還元性ガスまたは真空中において溶解し
た後、適当な鋳型で鋳造し、得られたインゴットを熱間
加工により所望の丸棒または板材となし、ついで冷間加
工を施して線材または箔材となし、そのままか、または
これをさらに非酸化性ガス、還元性ガスまたは真空中の
４００℃以上１２００℃以下の温度で加熱後冷却するこ
とを特徴とするゲージ率が２以上で、且つ比電気抵抗の
温度係数が（−１０〜１０）×１０−４／℃以内である
ことを特徴とするストレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ
基合金の製造法。Sixth Invention A raw material having an alloy composition of 5 to 30% by weight of Cr, 0.51 to 7% of Si, and the balance Fe and a small amount of impurities is used.
After melting in a non-oxidizing gas, reducing gas or vacuum, cast in a suitable mold, the obtained ingot is formed into a desired round bar or plate by hot working, and then cold working to make a wire or It has a gauge factor of 2 or more, which is characterized in that it is used as a foil material as it is, or it is further heated at a temperature of 400 ° C. or more and 1200 ° C. or less in a non-oxidizing gas, a reducing gas or a vacuum and then cooled, and Fe-Cr-Si for strain gauges, which has a temperature coefficient of specific electric resistance of (-10 to 10) x 10-4 / C or less.
Base alloy manufacturing method.
【００２０】第７発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＮｉ，Ｃｏのそれぞれ４０％以下、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素 のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉ
ｎ，希土類元素のそれぞれ５％以下、Ｂｅ３％以下，
Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以
上の合計０．００１〜５０％および残部Ｆｅと少量の不
純物とからなる合金組成の原料を、非酸化性ガス、還元
性ガスまたは真空中において溶解した後、適当な鋳型で
鋳造し、得られたインゴットを熱間加工により所望の丸
棒または板材となし、ついで冷間加工を施して線材また
は箔材となし、そのままか、またはこれをさらに非酸化
性ガス、還元性ガスまたは真空中の４００℃以上１２０
０℃以下の温度で加熱後冷却することを特徴とするゲー
ジ率が２以上で、且つ比電気抵抗の温度係数が（−１０
〜１０）×１０−４／℃以内であることを特徴とするス
トレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合金の製造法。Seventh Invention A weight ratio of Cr is 5 to 30%, Si is 0.51 to 7%, and Ni and Co are 40% or less of Mo,
W, V, Nb, Ta, Mn, and Cu are each 10% or less, Ti, Zr, Hf, Ag, Au, Al, Ge, and platinum group elements are each 7% or less, Sn, Sb, Ga, and I.
n, 5% or less for each rare earth element, 3% or less for Be,
A raw material having an alloy composition of 0.001 to 50% in total of one or more of B, C, and N of 1% or less and the balance Fe and a small amount of impurities is used as a non-oxidizing gas and a reducing gas. Alternatively, after melting in a vacuum, casting in a suitable mold, the obtained ingot is formed into a desired round bar or plate material by hot working, and then subjected to cold working into a wire material or foil material, or as it is, Alternatively, it is further heated at 400 ° C. or higher in a non-oxidizing gas, reducing gas or vacuum 120
The gauge factor is 2 or more, and the temperature coefficient of specific electric resistance is (-10
10) × 10 −4 / ° C. or less, a method for producing a Fe—Cr—Si based alloy for strain gauges.
【００２１】第８発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＮｉ４０％以下，Ｃｏ１７％未満、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，
希上類元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，
Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以上の
合計０．００１〜５０％および残部Ｆｅと少量の不純物
とからなる合金組成の原料を、非酸化性ガス、還元性ガ
スまたは真空中において溶解した後、適当な鋳型で鋳造
し得られたインゴットを熱間加工により所望の丸棒また
は板材となし、ついで冷間加工を施して線材または箔材
となし、そのままか、またはこれをさらに非酸化性ガ
ス、還元性ガスまたは真空中の４００℃以上１２００℃
以下の温度で加熱後冷却することを特徴とするゲージ率
が２以上で、且つ比電気抵抗の温度係数が（−１０〜１
０）×１０−４／℃以内であることを特徴とするストレ
インゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合金の製造法。Eighth invention Cr is 5 to 30% by weight, Si is 0.51 to 7%, and Ni is 40% or less, Co is less than 17%, Mo,
W, V, Nb, Ta, Mn, and Cu are each 10% or less, Ti, Zr, Hf, Ag, Au, Al, Ge, and platinum group elements are each 7% or less, Sn, Sb, Ga, In,
5% or less of each rare earth element, 3% or less of Be, B,
A raw material having an alloy composition consisting of 0.001 to 50% in total of one or more of C and N of 1% or less and the balance Fe and a small amount of impurities is used as a non-oxidizing gas, a reducing gas, or a vacuum. After melting in, the ingot obtained by casting in an appropriate mold is hot worked into a desired round bar or plate, then cold worked into a wire or foil, either as is or Furthermore, 400 ℃ or more and 1200 ℃ or more in non-oxidizing gas, reducing gas or vacuum
The gauge ratio is 2 or more, which is characterized by heating at the following temperature and then cooling, and the temperature coefficient of specific electric resistance is (-10 to 1).
0) × 10 −4 / ° C. or less, a method for producing a Fe—Cr—Si based alloy for a strain gauge.
【００２２】第９発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＣｏ４０％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔ
ａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈ
ｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそれぞれ７
％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，希土類元素のそれぞ
れ５％以下、Ｂｅ３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％
以下のうち１種または２種以上の合計０．００１〜５０
％および残部Ｆｅと少量の不純物とからなる合金組成の
原料を、非酸化性ガス、還元性ガスまたは真空中におい
て溶解した後、適当な鋳型で鋳造し、得られたインゴッ
トを熱間加工により所望の丸棒または板材となし、つい
で冷間加工を施して線材または箔材となし、そのまま
か、またはこれをさらに非酸化性ガス、還元性ガスまた
は真空中の４００℃以上１２００℃以下の温度で適当な
時間加熱後冷却することを特徴とするゲージ率が２以上
で、且つ比電気抵抗の温度係数が（−１０〜１０）×１
０−４／℃以内であるストレインゲージ用Ｆｅ−Ｃｒ−
Ｓｉ基合金の製造法。Ninth invention In a weight ratio, Cr is 5 to 30%, Si is 0.51 to 7%, and Co is 40% or less as a subcomponent, Mo, W, V, Nb, and T.
10% or less of a, Mn, and Cu, Ti, Zr, and H
f, Ag, Au, Al, Ge, each of the platinum group elements 7
%, Sn, Sb, Ga, In, rare earth elements each 5% or less, Be 3% or less, B, C, N each 1%
One or two or more of the following total 0.001-50
%, The balance Fe and a raw material of an alloy composition consisting of a small amount of impurities are melted in a non-oxidizing gas, a reducing gas or in a vacuum, and then cast in an appropriate mold, and the obtained ingot is subjected to hot working to obtain a desired product. No round bar or plate, then cold-worked into wire or foil, either as it is or at a temperature of 400 ° C to 1200 ° C in non-oxidizing gas, reducing gas or vacuum. It has a gauge factor of 2 or more, which is characterized by being heated and cooled for an appropriate time, and has a temperature coefficient of specific electric resistance of (-10 to 10) x 1
Fe-Cr- for strain gauges within 0-4 / ° C
Manufacturing method of Si-based alloy.
【００２３】第１０発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％、希土
類元素０．００１〜５％と、副成分としてＮｉ，Ｃｏの
それぞれ４０％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍ
ｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａ
ｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそれぞれ７％以
下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎのそれぞれ５％以下、Ｂｅ
３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種ま
たは２種以上の合計０．００１〜５０％および残部Ｆｅ
と少量の不純物とからなる合金組成の原料を、非酸化性
ガス、還元性ガスまたは真空中において溶解した後、適
当な鋳型で鋳造し、得られたインゴットを熱間加工によ
り所望の丸棒または板材となし、ついで冷間加工を施し
て線材または箔材となし、そのままか、またはこれをさ
らに非酸化性ガス、還元性ガスまたは真空中の４００℃
以上１２００℃以下の温度で加熱後冷却することを特徴
とするゲージ率が２以上で、且つ比電気抵抗の温度係数
が（−１０〜１０）×１０−４／℃以内であるストレイ
ンゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合金の製造法。Tenth Invention Cr 5 to 30% by weight, Si 0.51 to 7%, rare earth element 0.001 to 5% by weight, and 40% or less of Ni and Co respectively as auxiliary components, Mo, W, V, Nb, Ta, M
10% or less of each of n and Cu, Ti, Zr, Hf, A
g, Au, Al, Ge, platinum group elements each 7% or less, Sn, Sb, Ga, In each 5% or less, Be
3% or less, 1% or less of each of B, C and N of 1% or less, 0.001 to 50% in total and the balance Fe
A raw material of an alloy composition consisting of a small amount of impurities and non-oxidizing gas, reducing gas or after melting in a vacuum, cast in a suitable mold, the ingot obtained by hot working desired round bar or It is made into a plate material, and then cold-worked into a wire material or foil material, as it is or at 400 ° C in a non-oxidizing gas, reducing gas or vacuum.
Fe for a strain gauge having a gauge factor of 2 or more and having a temperature coefficient of specific electric resistance of (-10 to 10) x 10 -4 / ° C or less, characterized by being heated at a temperature of 1200 ° C or less and then cooled. -Method for producing a Cr-Si based alloy.
【００２４】第１１発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％および
残部Ｆｅと少量の不純物とからなり、ゲージ率が２以上
で、且つ比電気抵抗の温度係数が（−１０〜１０）×１
０−４／℃以内であるストレインゲージ用Ｆｅ−Ｃｒ−
Ｓｉ基合金の線材、箔材または薄膜のいずれかよりなる
ストレインゲージ。Eleventh Invention A weight ratio of 5 to 30% Cr, 0.51 to 7% Si, balance Fe and a small amount of impurities, a gauge factor of 2 or more, and a temperature coefficient of specific electric resistance (-10). -10) x 1
Fe-Cr- for strain gauges within 0-4 / ° C
A strain gauge made of a wire, foil or thin film of Si-based alloy.
【００２５】第１２発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＮｉ，Ｃｏのそれぞれ４０％以下、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕ のそれぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，
希土類元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，
Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以上の
合計０．００１〜５０％および残部Ｆｅと少量の不純物
とからなり、ゲージ率が２以上で、且つ比電気抵抗の温
度係数が（−１０〜１０）×１０−４／℃以内であるス
トレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基の線材、箔材また
は薄膜のいずれかよりなるストレインゲージ。Twelfth invention In a weight ratio, Cr is 5 to 30%, Si is 0.51 to 7%, and Ni and Co are 40% or less of Mo and
W, V, Nb, Ta, Mn, Cu 10% or less each, Ti, Zr, Hf, Ag, Au, Al, Ge, platinum group element each 7% or less, Sn, Sb, Ga, In,
5% or less for each rare earth element, 3% or less for Be, B,
Of 1% or less of each of C and N, one or more of 0.001 to 50% in total and the balance Fe and a small amount of impurities, a gauge factor of 2 or more, and a temperature coefficient of specific electrical resistance A strain gauge comprising a Fe-Cr-Si-based wire rod, a foil material or a thin film for a strain gauge, which is within (-10 to 10) x 10-4 / C.
【００２６】第１３発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＮｉ４０％以下，Ｃｏ１７％未満、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，
希土類元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，
Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以上の
合計０．００１〜５０％および残部Ｆｅと少量の不純物
とからなり、ゲージ率が２以上で、且つ比電気抵抗の温
度係数が（−１０〜１０）×１０−４／℃以内であるス
トレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合金の線材、箔材
または薄膜のいずれかよりなるストレインゲージ。Thirteenth invention: Cr is 5 to 30% by weight, Si is 0.51 to 7%, and Ni is 40% or less, Co is less than 17%, Mo,
W, V, Nb, Ta, Mn, and Cu are each 10% or less, Ti, Zr, Hf, Ag, Au, Al, Ge, and platinum group elements are each 7% or less, Sn, Sb, Ga, In,
5% or less for each rare earth element, 3% or less for Be, B,
Of 1% or less of each of C and N, one or more of 0.001 to 50% in total and the balance Fe and a small amount of impurities, a gauge factor of 2 or more, and a temperature coefficient of specific electrical resistance A strain gauge consisting of a wire material, a foil material or a thin film of a Fe-Cr-Si based alloy for strain gauge, which is within (-10 to 10) x 10-4 / C.
【００２７】第１４発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＣｏ４０％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔ
ａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈ
ｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそれぞれ７
％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，希土類元素のそれぞ
れ５％以下、Ｂｅ３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％
以下のうち１種または２種以上の合計０．００１〜５０
％および残部Ｆｅと少量の不純物とからなり、ゲージ率
が２以上で、且つ比電気抵抗の温度係数が（−１０〜１
０）×１０−４／℃以内であるストレインゲージ用Ｆｅ
−Ｃｒ−Ｓｉ基合金の線材、箔材または薄膜のいずれか
よりなるストレインゲージ。Fourteenth invention Cr 5 to 30% by weight, Si 0.51 to 7% by weight, Co 40% or less as an accessory component, Mo, W, V, Nb, T.
10% or less of a, Mn, and Cu, Ti, Zr, and H
f, Ag, Au, Al, Ge, each of the platinum group elements 7
%, Sn, Sb, Ga, In, rare earth elements each 5% or less, Be 3% or less, B, C, N each 1%
One or two or more of the following total 0.001-50
% And the balance Fe and a small amount of impurities, the gauge factor is 2 or more, and the temperature coefficient of the specific electric resistance is (-10 to 1).
0) Fe for strain gauge within 10 × 10 −4 / ° C.
A strain gauge made of a wire, foil or thin film of a Cr-Si based alloy.
【００２８】第１５発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％、希土
類元素０．００１〜５％と、副成分としてＮｉ，Ｃｏの
それぞれ４０％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍ
ｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａ
ｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそれぞれ７％以
下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎのそれぞれ５％以下、Ｂｅ
３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種ま
たは２種以上の合計０．００１〜５０％および残部Ｆｅ
と少量の不純物とからなり、ゲージ率が２以上で、且つ
比電気抵抗の温度係数が（−１０〜１０）×１０−４／
℃以内であるストレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合
金の線材、箔材または薄膜のいずれかよりなるストレイ
ンゲージ。Fifteenth invention: 5 to 30% by weight of Cr, 0.51 to 7% of Si, 0.001 to 5% of rare earth element, and 40% or less of each of Ni and Co as auxiliary components, Mo, W, V, and Nb, Ta, M
10% or less of each of n and Cu, Ti, Zr, Hf, A
g, Au, Al, Ge, platinum group elements each 7% or less, Sn, Sb, Ga, In each 5% or less, Be
3% or less, 1% or less of each of B, C and N of 1% or less, 0.001 to 50% in total and the balance Fe
And a small amount of impurities, the gauge factor is 2 or more, and the temperature coefficient of specific electric resistance is (-10 to 10) x 10 -4 /
A strain gauge made of a wire material, a foil material, or a thin film of a Fe-Cr-Si-based alloy for a strain gauge, which is within a temperature of 0 ° C.
【００２９】第１６発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％および
残部Ｆｅと少量の不純物とからなるＦｅ−Ｃｒ−Ｓｉ基
合金の線材または箔材を、適当なベース面に貼付して素
子となし、そのままか、または必要ならばさらに温度補
償として、該素子と直角成分の素子を同一面内に構築し
てゲージパターンを形成したことを特徴とするストレイ
ンゲージ。Sixteenth invention A wire or foil material of Fe-Cr-Si based alloy consisting of Cr 5-30% by weight, Si 0.51-7% by weight and the balance Fe and a small amount of impurities is applied to a suitable base surface. A strain gauge characterized in that a gauge pattern is formed by adhering it to form an element, as it is, or if necessary, as temperature compensation, by constructing an element having a component orthogonal to the element in the same plane.
【００３０】第１７発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＮｉ，Ｃｏのそれぞれ４０％以下、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，
希土類元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，
Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以上の
合計０．００１〜５０％および残部Ｆｅと少量の不純物
とからなるＦｅ−Ｃｒ−Ｓｉ基合金の線材または箔材
を、適当なベース面に貼付して素子となし、そのまま
か、または必要ならばさらに温度補償として、該素子と
直角成分の素子を同一面内に構築してゲージパターンを
形成したことを特徴とするストレインゲージ。Seventeenth invention Cr 5 to 30% by weight, Si 0.51 to 7% by weight, and 40% or less of each of Ni and Co as auxiliary components, Mo,
W, V, Nb, Ta, Mn, and Cu are each 10% or less, Ti, Zr, Hf, Ag, Au, Al, Ge, and platinum group elements are each 7% or less, Sn, Sb, Ga, In,
5% or less for each rare earth element, 3% or less for Be, B,
A wire or foil material of a Fe-Cr-Si based alloy consisting of 0.001 to 50% in total of 1 or 2 or more of 1% or less of C and N and the balance Fe and a small amount of impurities is suitable. A strain gauge characterized in that a gauge pattern is formed by adhering to a base surface to form an element, as it is, or as necessary for further temperature compensation, an element having a component orthogonal to the element is constructed in the same plane.
【００３１】第１８発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＮｉ４０％以下，Ｃｏ１７％未満、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素の それぞれ７％以下Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，
希土類元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，
Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以上の
合計０．００１〜５０％および残部Ｆｅと少量の不純物
とからなるＦｅ−Ｃｒ−Ｓｉ基合金の線材または箔材
を、適当なベース面に貼付して素子となし、そのまま
か、または必要ならばさらに温度補償として、該素子と
直角成分の素子を同一面内に構築してゲージパターンを
形成したことを特徴とするストレインゲージ。Eighteenth invention Cr is 5 to 30% by weight, Si is 0.51 to 7%, and Ni is 40% or less, Co is less than 17%, Mo,
W, V, Nb, Ta, Mn, and Cu are each 10% or less, Ti, Zr, Hf, Ag, Au, Al, Ge, and platinum group elements are each 7% or less Sn, Sb, Ga, In,
5% or less for each rare earth element, 3% or less for Be, B,
A wire or foil material of a Fe-Cr-Si based alloy consisting of 0.001 to 50% in total of 1 or 2 or more of 1% or less of C and N and the balance Fe and a small amount of impurities is suitable. A strain gauge characterized in that a gauge pattern is formed by adhering to a base surface to form an element, as it is, or, if necessary, as temperature compensation, by constructing an element having a component orthogonal to the element in the same plane.
【００３２】第１９発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＣｏ４０％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔ
ａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈ
ｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそれぞれ７
％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，希土類元素のそれぞ
れ５％以下、Ｂｅ３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％
以下のうち１種または２種以上の合計０．００１〜５０
％および残部Ｆｅと少量の不純物とからなるＦｅ−Ｃｒ
−Ｓｉ基合金の線材または箔材を、適当なベース面に貼
付して素子となし、そのままか、または必要ならばさら
に温度補償として、該素子と直角成分の素子を同一面内
に構築してゲージパターンを形成したことを特徴とする
ストレインゲージ。Nineteenth invention Cr 5 to 30% by weight, Si 0.51 to 7% by weight, Co 40% or less as an accessory component, Mo, W, V, Nb, T.
10% or less of a, Mn, and Cu, Ti, Zr, and H
f, Ag, Au, Al, Ge, each of the platinum group elements 7
%, Sn, Sb, Ga, In, rare earth elements each 5% or less, Be 3% or less, B, C, N each 1%
One or two or more of the following total 0.001-50
% And the balance Fe and a small amount of impurities Fe-Cr
-A wire or foil material of Si-based alloy is attached to an appropriate base surface to form an element, and as it is, or if necessary, as a temperature compensation, an element having a component orthogonal to the element is formed in the same plane. A strain gauge characterized by forming a gauge pattern.
【００３３】第２０発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％、希土
類元素０．００１〜５％と、副成分としてＮｉ，Ｃｏの
それぞれ４０％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍ
ｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａ
ｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそれぞれ７％以
下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎのそれぞれ５％以下、Ｂｅ
３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種ま
たは２種以上の合計０．００１〜５０％および残部Ｆｅ
と少量の不純物とからなるＦｅ−Ｃｒ−Ｓｉ基合金の線
材または箔材を、適当なベース面に貼付して素子とな
し、そのままか、または必要ならばさらに温度補償とし
て、該素子と直角成分の素子を同一面内に構築してゲー
ジパターンを形成したことを特徴とするストレインゲー
ジ。Twentieth invention By weight ratio, Cr is 5 to 30%, Si is 0.51 to 7%, rare earth element is 0.001 to 5%, and Ni and Co are 40% or less of each of secondary components, Mo, W, V, and Nb, Ta, M
10% or less of each of n and Cu, Ti, Zr, Hf, A
g, Au, Al, Ge, platinum group elements each 7% or less, Sn, Sb, Ga, In each 5% or less, Be
3% or less, 1% or less of each of B, C and N of 1% or less, 0.001 to 50% in total and the balance Fe
And a small amount of impurities, a wire or foil of an Fe-Cr-Si-based alloy is attached to a suitable base surface to form an element, and as it is, or if necessary, as temperature compensation, a component perpendicular to the element is formed. A strain gauge characterized in that a gauge pattern is formed by constructing the above elements in the same plane.
【００３４】第２１発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％および
残部Ｆｅと少量の不純物とからなるＦｅ−Ｃｒ−Ｓｉ基
合金を、電着、蒸着、無電解メッキまたはスパッタリン
グより選択した方法で、所望の形状に薄膜を形成するか
または薄膜を形成後所望の形状に打ち抜き、フォトエッ
チングまたはトリミングなどの加工を施して素子とな
し、必要ならば温度補償として、該素子と直角成分の素
子を同一面内に構築してゲージパターンを形成し、さら
に電極を構成し、そのままか、またはこれをさらに非酸
化性ガス、還元性ガスまたは真空中で熱処理を施したこ
とを特徴とする薄膜ストレインゲージ。Twenty-first invention A Fe-Cr-Si based alloy consisting of Cr 5-30% by weight, Si 0.51-7% by weight and the balance Fe and a small amount of impurities is electrodeposited, vapor-deposited, electroless plated or sputtered. By a more selected method, a thin film is formed in a desired shape, or after the thin film is formed, the thin film is punched into a desired shape and subjected to processing such as photoetching or trimming to form an element. Characteristic is that elements with right-angled components are constructed in the same plane to form a gauge pattern, and electrodes are further configured, either directly or by heat treatment in a non-oxidizing gas, reducing gas or vacuum. Thin film strain gauge
【００３５】第２２発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＮｉ，Ｃｏのそれぞれ４０％以下、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕの それぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，
希土類元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，
Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以上の
合計０．００１〜５０％および残部Ｆｅと少量の不純物
とからなるＦｅ−Ｃｒ−Ｓｉ基合金を、電着、蒸着、無
電解メッキまたはスパッタリングより選択した方法で、
所望の形状に薄膜を形成するかまたは薄膜を形成後所望
の形状に打ち抜き、フォトエッチングまたはトリミング
などの加工を施して素子となし、必要ならば温度補償と
して、該素子と直角成分の素子を同一面内に構築してゲ
ージパターンを形成し、さらに電極を構成し、そのまま
か、またはこれをさらに非酸化性ガス、還元性ガスまた
は真空中で熱処理を施したことを特徴とする薄膜ストレ
インゲージ。Twenty-second invention: By weight ratio, Cr is 5 to 30%, Si is 0.51 to 7%, and Ni and Co are 40% or less of Mo and
W, V, Nb, Ta, Mn, and Cu are each 10% or less, Ti, Zr, Hf, Ag, Au, Al, Ge, and platinum group elements are each 7% or less, Sn, Sb, Ga, In,
5% or less for each rare earth element, 3% or less for Be, B,
Fe-Cr-Si based alloys consisting of 0.001 to 50% of one or two or more of 1% or less of C and N respectively and the balance Fe and a small amount of impurities are electrodeposited, vapor-deposited and electroless. By the method selected from plating or sputtering,
Form a thin film in the desired shape, or after forming the thin film, punch it into the desired shape and apply photo-etching or trimming to make it into an element. A thin film strain gauge characterized by being constructed in-plane to form a gauge pattern, and further constituting an electrode, which is either directly or further heat-treated in a non-oxidizing gas, a reducing gas or in a vacuum.
【００３６】第２３発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＮｉ４０％以下，Ｃｏ１７％未満、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，
希土類元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，
Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以上の
合計０．００１〜５０％および残部Ｆｅと少量の不純物
とからなるＦｅ−Ｃｒ−Ｓｉ基合金を、電着、蒸着、無
電解メッキまたはスパッタリングより選択した方法で、
所望の形状に薄膜を形成するかまたは薄膜を形成後所望
の形状に打ち抜き、フォトエッチングまたはトリミング
などの加工を施して素子となし、必要ならば温度補償と
して、該素子と直角成分の素子を同一面内に構築してゲ
ージパターンを形成し、さらに電極を構成し、そのまま
か、またはこれをさらに非酸化性ガス、還元性ガスまた
は真空中で熱処理を施したことを特徴とする薄膜ストレ
インゲージ。Twenty-third Invention Cr is 5 to 30% by weight, Si is 0.51 to 7%, and Ni is 40% or less, Co is less than 17%, Mo,
W, V, Nb, Ta, Mn, and Cu are each 10% or less, Ti, Zr, Hf, Ag, Au, Al, Ge, and platinum group elements are each 7% or less, Sn, Sb, Ga, In,
5% or less for each rare earth element, 3% or less for Be, B,
Fe-Cr-Si based alloys consisting of 0.001 to 50% of one or two or more of 1% or less of C and N respectively and the balance Fe and a small amount of impurities are electrodeposited, vapor-deposited and electroless. By the method selected from plating or sputtering,
Form a thin film in the desired shape, or after forming the thin film, punch it into the desired shape and apply photo-etching or trimming to make it into an element. A thin film strain gauge characterized by being constructed in-plane to form a gauge pattern, and further constituting an electrode, which is either directly or further heat-treated in a non-oxidizing gas, a reducing gas or in a vacuum.
【００３７】第２４発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％と、副
成分としてＣｏ４０％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔ
ａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈ
ｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそれぞれ７
％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，希土類元素のそれぞ
れ５％以下、Ｂｅ３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％
以下のうち１種または２種以上の合計０．００１〜５０
％および残部Ｆｅと少量の不純物とからなるＦｅ−Ｃｒ
−Ｓｉ基合金を、電着、蒸着、無電解メッキまたはスパ
ッタリングより選択した方法で、所望の形状に薄膜を形
成しするかまたは薄膜を形成後所望の形状に打ち抜き、
フォトエッチングまたはトリミングなどの加工を施して
素子となし、必要ならば温度補償として、該素子と直角
成分の素子を同一面内に構築してゲージパターンを形成
し、さらに電極を構成し、そのままか、またはこれをさ
らに非酸化性ガス、還元性ガスまたは真空中で熱処理を
施したことを特徴とする薄膜ストレインゲージ。Twenty-fourth invention By weight ratio, Cr is 5 to 30%, Si is 0.51 to 7%, and Co is 40% or less as a subcomponent, Mo, W, V, Nb, and T.
10% or less of a, Mn, and Cu, Ti, Zr, and H
f, Ag, Au, Al, Ge, each of the platinum group elements 7
%, Sn, Sb, Ga, In, rare earth elements each 5% or less, Be 3% or less, B, C, N each 1%
One or two or more of the following total 0.001-50
% And the balance Fe and a small amount of impurities Fe-Cr
-Si-based alloy, by a method selected from electrodeposition, vapor deposition, electroless plating or sputtering, to form a thin film in a desired shape, or punched into a desired shape after forming the thin film,
Photo-etching or trimming is applied to form an element, and if necessary, as temperature compensation, an element having a component orthogonal to the element is constructed in the same plane to form a gauge pattern, and then an electrode is formed. Or a thin film strain gauge characterized by being further heat-treated in a non-oxidizing gas, a reducing gas or in a vacuum.
【００３８】第２５発明 重量比にてＣｒ５〜３０％，Ｓｉ０．５１〜７％、希土
類元素０．００１〜５％と、副成分としてＮｉ，Ｃｏの
それぞれ４０％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍ
ｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａ
ｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそれぞれ７％以
下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，のそれぞれ５％以下、Ｂ
ｅ３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種
または２種以上の合計０．００１〜５０％および残部Ｆ
ｅと少量の不純物とからなるＦｅ−Ｃｒ−Ｓｉ基合金
を、電着、蒸着、無電解メッキまたはスパッタリングよ
り選択した方法で、所望の形状に薄膜を形成するかまた
は薄膜を形成後所望の形状に打ち抜き、フォトエッチン
グまたはトリミングなどの加工を施して素子となし、必
要ならば温度補償として、該素子と直角成分の素子を同
一面内に構築してゲージパターンを形成し、さらに電極
を構成し、そのままか、またはこれをさらに非酸化性ガ
ス、還元性ガスまたは真空中で熱処理を施したことを特
徴とする薄膜ストレインゲージ。Twenty-fifth invention Cr is 5 to 30% by weight, Si is 0.51 to 7%, rare earth element is 0.001 to 5%, and Ni and Co are 40% or less of each of secondary components, Mo, W, V, and Nb, Ta, M
10% or less of each of n and Cu, Ti, Zr, Hf, A
g, Au, Al, Ge, platinum group elements each 7% or less, Sn, Sb, Ga, In, each 5% or less, B
e 3% or less, 1% or less of B, C, and N each 1% or less, 0.001 to 50% in total and the balance F
A Fe-Cr-Si based alloy consisting of e and a small amount of impurities is formed into a desired shape by a method selected from electrodeposition, vapor deposition, electroless plating or sputtering, or a desired shape after the thin film is formed. Punching, photo-etching or trimming is performed to form an element, and if necessary, temperature compensation is performed by constructing an element having a component orthogonal to the element in the same plane to form a gauge pattern and further forming an electrode. A thin film strain gauge, characterized by being heat-treated as it is or in a non-oxidizing gas, a reducing gas or a vacuum.
【００３９】[0039]
【作用】図１および図２は、Ｆｅ−Ｃｒ−Ｓｉ系合金の
加工率９０％におけるゲージ率Ｋおよび比電気抵抗の温
度係数Ｃｆを示したものである。Ｆｅ−Ｃｒ２元系合金
のＫおよびＣｆは非常に大きいが、これにＳｉを添加す
ると、一般にＳｉ量の増加とともにＫおよびＣｆは減少
する。すなわち、Ｓｉ７％以上ではＫが２以下となり、
またＳｉが０．５１％以下ではＣｆが（−１０〜１０）
×１０−４以外となり、ストレインゲージ用合金として
好ましくなく、本発明の所期の特性が得られないので、
Ｓｉ量を０．５１〜７％、望ましくは１．０〜５％と限
定した。また、Ｃｒ５％以下では比電気抵抗が小さく、
他方Ｃｒ３０％以上では細線および箔に加工することが
困難になるので、Ｃｒ量を５〜３０％、望ましくは１０
〜２５％に限定した。1 and 2 show the gauge factor K and the temperature coefficient Cf of the specific electric resistance of the Fe-Cr-Si alloy at a working rate of 90%. The Fe and Cr binary alloys have very high K and Cf, but when Si is added to them, K and Cf generally decrease as the amount of Si increases. That is, when Si is 7% or more, K is 2 or less,
When Si is 0.51% or less, Cf is (-10 to 10).
Other than × 10 −4 , it is not preferable as an alloy for strain gauges, and the desired characteristics of the present invention cannot be obtained.
The Si amount is limited to 0.51 to 7%, preferably 1.0 to 5%. When Cr is 5% or less, the specific electric resistance is small,
On the other hand, if the Cr content is 30% or more, it becomes difficult to form fine wires and foils, so the Cr content is 5 to 30%, preferably 10%.
Limited to ~ 25%.
【００４０】さらに、図３〜図６に見られるように、副
成分として添加するＮｉ，Ｃｏのそれぞれ４０％以下、
Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕ，のそれぞれ１
０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇ
ｅ，白金族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇ
ａ，Ｉｎ，希土類元素のそれぞれ５％以下、Ｂｅ３％以
下、Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種または２
種以上の合計０．００１〜５０％および残部Ｆｅと、そ
れぞれの範囲に限定した理由は、この範囲ではゲージ率
が２以上の高い値が得られ、且つ比電気抵抗の温度係数
が（−１０〜１０）×１０−４／℃以内の小さい値が得
られるからであり、またゲージ率のバラツキが極めて少
なく、ゲージ特性が改善され、加工性も向上するが、こ
れらの範囲外では、これらの効果が期待できないからで
ある。Further, as shown in FIGS. 3 to 6, 40% or less of each of Ni and Co added as sub-components,
1 for each of Mo, W, V, Nb, Ta, Mn, Cu
0% or less, Ti, Zr, Hf, Ag, Au, Al, G
e, 7% or less of each of platinum group elements, Sn, Sb, G
One or two of 5% or less of each of a, In and rare earth elements, 3% or less of Be, and 1% or less of each of B, C and N.
The reason for limiting the total of 0.001 to 50% of the seeds and the balance Fe to the respective ranges is that a high value of a gauge factor of 2 or more is obtained in this range and the temperature coefficient of the specific electric resistance is (-10 This is because a small value within 10) × 10 −4 / ° C. can be obtained, and the variation in gauge ratio is extremely small, the gauge characteristics are improved, and the workability is also improved. This is because the effect cannot be expected.
【００４１】すなわち、Ｃｏ，Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｚ
ｒ，Ｈｆ，Ｂｅ，Ｂ，ＣおよびＮは、特にゲージ率を高
める効果が大きく、またＮｉ，Ａｌ，Ｇｅ，Ｇａ，Ｉ
ｎ，希土類元素およびＢｅは抵抗温度係数を小さくする
効果が大きく、さらにＮｉ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｔ
ｉ，Ｚｒ，Ｈｆ，Ａｌ，白金族元素および希土類元素
は、加工性を向上する効果が大きい。また本発明の代表
的合金の極細線（線径０．０６ｍｍ、加工率９０％）の
ゲージ特性を測定した結果、表１に示すような値が得ら
れた。That is, Co, Mo, W, V, Nb, Z
r, Hf, Be, B, C and N have a particularly large effect of increasing the gauge factor, and Ni, Al, Ge, Ga, I
n, rare earth elements and Be have a large effect of reducing the temperature coefficient of resistance, and further Ni, V, Nb, Ta, Mn, T
i, Zr, Hf, Al, platinum group elements and rare earth elements have a great effect of improving workability. Further, as a result of measuring the gauge characteristics of the ultrafine wire (wire diameter 0.06 mm, processing rate 90%) of the representative alloy of the present invention, the values shown in Table 1 were obtained.
【００４２】[0042]
【表１】 さらに、図８および図９に見られるように、本発明合金
を４００℃以上１２００℃以下の温度範囲において、１
分間以上１００時間以下加熱し、ついで１℃／時以上１
００℃／分以下の速度で冷却することにより、所期のゲ
ージ特性が得られるのである。一般にゲージ特性は、加
熱温度の上昇とともに、短い時間加熱することによっ
て、所期の特性が得られる。したがって４００℃以下の
低い温度で加熱する場合は長時間の加熱を要するので経
済的に好ましくなく、また１２００℃以上では、所期の
ゲージ特性が得られないからである。[Table 1] Further, as shown in FIGS. 8 and 9, the alloy of the present invention is
Heat for 1 minute or more and 100 hours or less, then 1 ° C / hour or more 1
By cooling at a rate of 00 ° C./minute or less, the desired gauge characteristics can be obtained. In general, the gage characteristics can be obtained by heating for a short time as the heating temperature rises. Therefore, when heating at a low temperature of 400 ° C. or lower, long-time heating is required, which is economically undesirable, and at 1200 ° C. or higher, desired gauge characteristics cannot be obtained.
【００４３】尚、希土類元素は、Ｓｃ，Ｙおよびランタ
ン系元素からなるが、その効果は均等であり、また白金
族元素はＰｄ，Ｐｔ，Ｒｈ，Ｉｒ，ＲｕおよびＯｓから
なるがその効果も均等であり、これらはいずれも同効成
分である。さらに、熱処理の条件において、４００℃以
上１２００℃以下の温度と限定し、好ましくは１分間以
上１０時間加熱するように限定した理由は、この処理条
件内では、冷間加工が容易となり、またゲージ率が２以
上で、且つ比電気抵抗の温度係数が（−１０〜１０）×
１０−４／℃以内になって好ましいからである。The rare earth element is Sc, Y and a lanthanum element, but the effect is uniform, and the platinum group element is Pd, Pt, Rh, Ir, Ru and Os, but the effect is also uniform. And these are all the same-effect ingredients. Further, the reason for limiting the heat treatment condition to a temperature of 400 ° C. or more and 1200 ° C. or less, preferably heating for 1 minute or more and 10 hours is that the cold working becomes easy and the gauge The rate is 2 or more, and the temperature coefficient of the specific electric resistance is (-10 to 10) x
This is because it is preferable to be within 10 −4 / ° C.
【００４４】[0044]
【実施例】以下、本発明の実施例について述べる。 実施例１ 合金番号２７（組成：Ｆｅ−１８％Ｃｒ−２
％Ｓｉ−１０％Ｎｉ）合金の線材・箔材の製造と評価 原料としては、９９．９％純度の電解鉄、９９．４％純
度のテルミットクロムおよびシリコン、９９．９％純度
の電解ニッケルを用いた。試料を造るには、先ず全重量
の１００ｇの原料をアルミナ坩堝に入れ、真空中で高周
波誘導電解炉を用いて徐々に加熱し、融点直下で暫く一
定の温度に保ち原料中のガスを排気する。その後、さら
に温度を昇温して全体が溶融状態とする。この作業にお
いて、融液を撹拌して均質な溶融合金とする。つぎに内
径１０ｍｍ、高さ１２０ｍｍの鉄型に鋳込み鋳塊とし
た。このような方法で、同じインゴットを１０本製造し
た。これらのインゴットを１１５０℃で鍛造して、外径
５ｍｍの丸棒にし、さらに１０００℃の中間焼鈍を何度
か繰り返した後、スエージングおよび冷間線引き抜きに
より直径０．０６ｍｍの極細線を造った。この場合の加
工率は、９０％であった。つぎに、得られた極細線に対
して、真空中４００〜１２００℃の各種温度で１０分〜
５時間加熱後、室温まで炉中冷却（平均１００℃／時
間）した。表２には、種々な熱処理を施した場合の特性
値を示した。EXAMPLES Examples of the present invention will be described below. Example 1 Alloy No. 27 (Composition: Fe-18% Cr-2
% Si-10% Ni) alloy wire / foil material production and evaluation As raw materials, electrolytic iron of 99.9% purity, thermite chromium and silicon of 99.4% purity, electrolytic nickel of 99.9% purity are used. Using. In order to prepare a sample, first, 100 g of the total weight of the raw material is put into an alumina crucible, gradually heated in a high frequency induction electrolysis furnace in a vacuum, and the gas in the raw material is exhausted while keeping a constant temperature just below the melting point for a while. . Then, the temperature is further raised to bring the whole into a molten state. In this operation, the melt is agitated to form a homogeneous molten alloy. Next, an ingot was cast into an iron mold having an inner diameter of 10 mm and a height of 120 mm to form an ingot. In this way, 10 identical ingots were manufactured. These ingots were forged at 1150 ° C to make a round bar with an outer diameter of 5 mm, and after repeating intermediate annealing at 1000 ° C several times, an ultrafine wire with a diameter of 0.06 mm was made by swaging and cold drawing. It was The processing rate in this case was 90%. Next, the obtained ultrafine wire is vacuumed at various temperatures of 400 to 1200 ° C. for 10 minutes to
After heating for 5 hours, it was cooled to room temperature in the furnace (average 100 ° C./hour). Table 2 shows the characteristic values when various heat treatments were performed.
【００４５】[0045]
【表２】 [Table 2]
【００４６】上記極細線とは別に、同様な方法で作製し
たインゴットから圧延と熱処理の工程を経て厚さ３μｍ
および１００ｍｍの箔材を得た。ここで、圧延の加工率
および熱処理などの条件は、極細線のそれと殆ど同じで
あった。図７は、合金番号２７のロット１０種から製造
した極細線の加工状態におけるゲージ率Ｋの測定結果を
示す。この図からＫの平均値（図中印）、最大値、最小
値、およびＫのばらつきΔＫなどが求められる。本発明
のＫは、ロット内では４．００±０．０２およびロット
間では４．００±０．０２で、それらのばらつきΔＫ
は、０．５％で非常に小さい。すなわち、本発明合金の
ΔＫは、比較合金のそれに比べて約１０分の１で、著し
く改善されていることが分かった。なお、箔材の場合の
ゲージ特性は、線材のΔＫとほぼ一致した。Separately from the above ultrafine wire, an ingot produced by the same method is rolled and heat-treated to have a thickness of 3 μm.
And a foil material of 100 mm was obtained. Here, the conditions such as the rolling rate and the heat treatment were almost the same as those of the ultrafine wire. FIG. 7 shows the measurement results of the gauge factor K in the processed state of the ultrafine wire manufactured from alloy No. 27 lot 10 species. From this figure, the average value of K (marked in the figure), the maximum value, the minimum value, and the variation ΔK of K are obtained. The K of the present invention is 4.00 ± 0.02 within a lot and 4.00 ± 0.02 between lots, and their variation ΔK.
Is very small at 0.5%. That is, it was found that the ΔK of the alloy of the present invention was about 1/10 of that of the comparative alloy, and was significantly improved. The gauge characteristics of the foil material were almost the same as the ΔK of the wire material.
【００４７】実施例２ 合金番号５８（組成：Ｆｅ−１
５％Ｃｒ−３％Ｓｉ−１３％Ｃｏ−４％Ｒｕ）合金の線
材および箔材よりなるストレインゲージの製造と評価 合金の原料は、さらに９９．８％純度の電解コバルトお
よび９９．９％純度のルテニウムを用い、製造工程の条
件は、実施例１と同じであった。得られた極細線と箔材
をそのままか、あるいはさらに真空中の４００℃以上１
２００℃以下の温度で１時間加熱処理した該極細線およ
び該箔材を、厚さ５μｍの樹脂に接着した後グリッド状
のゲージパターンに加工して線材または箔材よりなるス
トレインゲージを試作した。線材ストレインゲージまた
は箔材ストレインゲージの評価結果を、それぞれ図８お
よび図９に示す。ゲージ率Ｋは、加熱温度に対して約８
００℃で極大となる。ゲージ率Ｋは約８００℃で極大値
を示し、また比電気抵抗ρおよび対銅熱起電力Ｅｍｆ
は、加熱温度に対し大きな変化はないが、抵抗温度係数
Ｃｆは小さい。すなわち、本発明合金を使用することに
よって高感度・高安定性ストレインゲージが提供できる
ことを明らかにした。Example 2 Alloy No. 58 (composition: Fe-1
5% Cr-3% Si-13% Co-4% Ru) Strain gauge made of wire and foil material of alloy and its evaluation Raw material of the alloy is electrolytic cobalt of 99.8% purity and 99.9% purity. Was used, and the manufacturing process conditions were the same as in Example 1. The obtained ultrafine wire and foil material may be used as they are, or may be further heated to 400 ° C or higher in a vacuum.
The ultrafine wire and the foil material which had been heat-treated at a temperature of 200 ° C. or less for 1 hour were adhered to a resin having a thickness of 5 μm and then processed into a grid-shaped gauge pattern to manufacture a strain gauge made of a wire material or a foil material. The evaluation results of the wire strain gauge or the foil strain gauge are shown in FIGS. 8 and 9, respectively. Gauge rate K is about 8 with respect to heating temperature
It reaches a maximum at 00 ° C. The gauge factor K shows a maximum value at about 800 ° C., the specific electric resistance ρ and the thermoelectromotive force with respect to copper Emf
Does not have a large change with respect to the heating temperature, but the resistance temperature coefficient Cf is small. That is, it was clarified that a highly sensitive and highly stable strain gauge can be provided by using the alloy of the present invention.
【００４８】実施例３ 合金番号６７（組成：Ｆｅ−１
３％Ｃｒ−４％Ｓｉ−３％Ｚｒ−１％Ｙ）合金の薄膜ス
トレインゲージの製造と評価 使用した原料の純度は、実施例１にさらに９９．９９％
純度のイットリウムおよびジルコニウムを用いた。試料
の製造方法は、先ず所定の配合からなる原料８００ｇを
高純度アルミナ坩堝に入れ、高周波溶解炉を使用して、
１０−５Ｔｏｒｒの真空中高温にて脱ガス後、高純度ア
ルゴンガス中で溶解し、除滓後鍛造してインゴットを得
る。このインゴットを１１００℃で鍛造して、直径１０
５ｍｍおよび厚さ３ｍｍの円盤状に加工する。ついで旋
盤により、精密加工して直径１０５ｍｍおよび厚さ２ｍ
ｍの円盤を作製する。最後に銅製電極にボンデングして
スパッター用ターゲットとする。これらのターゲットか
らスパッター装置を用いて、下記に示したスパッター条
件で厚さ１μｍの薄膜を作製する。Example 3 Alloy No. 67 (composition: Fe-1
3% Cr-4% Si-3% Zr-1% Y) alloy thin film strain gauge production and evaluation The purity of the raw material used was 99.99% in Example 1.
Pure yttrium and zirconium were used. First, 800 g of a raw material having a predetermined composition is put into a high-purity alumina crucible and a high-frequency melting furnace is used to prepare a sample.
After degassing at a high temperature of 10 −5 Torr in vacuum, it is melted in high-purity argon gas, slag is removed, and then forged to obtain an ingot. This ingot was forged at 1100 ° C and had a diameter of 10
It is processed into a disk shape having a thickness of 5 mm and a thickness of 3 mm. Then, using a lathe, perform precision processing to a diameter of 105 mm and a thickness of 2 m.
Make a disk of m. Finally, the copper electrode is bonded to form a sputtering target. A thin film having a thickness of 1 μm is produced from these targets by using a sputtering device under the following sputtering conditions.
【００４９】 予備排気 １×１０−７ Ｔｏｒｒ 高周波電力 １００ Ｗ アルゴンガス圧 ３×１０−２ 基板 ＳｉＯ２ 基板 電極間距離 ５０ｍｍ 成膜速度 ６０ Å／ｍｉｎ 膜厚 １μｍ ついでマスキングを施し、エッチングによりゲージパタ
ーンとし、図１０（Ａ）に示すとおり電極を取り付けて
４８素子のゲージを作製する。図１０（Ｂ）は、図１０
（Ａ）の得られた素子個々のＫのばらつきを示したもの
で、成膜状態で４．０±０．０５となり、非常に良好で
あった。Preliminary exhaust 1 × 10 −7 Torr High frequency power 100 W Argon gas pressure 3 × 10 −2 Substrate SiO 2 substrate Distance between electrodes 50 mm Film deposition rate 60 Å / min Film thickness 1 μm Then, masking is applied and a gauge pattern is obtained by etching. Then, electrodes are attached as shown in FIG. 10 (A) to manufacture a gauge of 48 elements. FIG. 10B is the same as FIG.
(A) shows the variation in K of each obtained element, which was 4.0 ± 0.05 in the film-forming state, which was very good.
【００５０】上記ゲージ内の、ゲージ率のばらつきが少
ない素子について、Ａｒ中各温度で３０分加熱して試料
とする。図１１は、これらの素子のゲージ特性と加熱温
度との関係を示したものである。得られたゲージ特性
は、線材・箔材およびそれらを使用したストレインゲー
ジの評価結果とよく似ている。The element having a small variation in gauge ratio in the gauge is heated in Ar for 30 minutes at each temperature to prepare a sample. FIG. 11 shows the relationship between the gauge characteristics of these elements and the heating temperature. The obtained gauge characteristics are very similar to the evaluation results of the wire / foil material and the strain gauge using them.
【００５１】[0051]
【発明の効果】上記の実験結果が示すように、本発明合
金はゲージ特性および加工性が従来の材料よりさらに向
上し、特性のばらつきが少なくなる特徴を有している。
さらに、本発明のストレインゲージ用合金の線材、箔材
または薄膜よりなるストレインゲージは、ゲージ率が２
以上で、且つ比電気抵抗の温度係数（−１０〜１０）×
１０−４／℃以内であるので、高感度・高安定性を発揮
する効果がある。したがって、本発明合金よりなるスト
レインゲージは、ロードセル、ストレインセンサ、重量
計、加速度計、圧力計、各種応力・歪計および各種セキ
ュリテイ機器などに好適である。As shown by the above experimental results, the alloy of the present invention has the characteristics that the gauge characteristics and workability are further improved as compared with the conventional materials, and the variations in the characteristics are reduced.
Further, the strain gauge made of the alloy wire, foil or thin film of the strain gauge alloy of the present invention has a gauge factor of 2 or less.
Above, and temperature coefficient of specific electrical resistance (-10 to 10) ×
Since it is within 10 −4 / ° C., it has an effect of exhibiting high sensitivity and high stability. Therefore, the strain gauge made of the alloy of the present invention is suitable for load cells, strain sensors, weight scales, accelerometers, pressure gauges, various stress / strain gauges, various security devices, and the like.
【図１】図１は、Ｆｅ−Ｃｒ−Ｓｉ系合金のゲージ率Ｋ
と合金組成との関係を示す特性図である。FIG. 1 is a gauge ratio K of a Fe—Cr—Si alloy.
It is a characteristic view showing the relationship between and the alloy composition.
【図２】図２は、Ｆｅ−Ｃｒ−Ｓｉ系合金の抵抗温度係
数Ｃｆと合金組成との関係を示す特性図である。FIG. 2 is a characteristic diagram showing the relationship between the temperature coefficient of resistance Cf of an Fe—Cr—Si alloy and the alloy composition.
【図３】図３は、Ｆｅ−１８％Ｃｒ−２．５％Ｓｉ系合
金に、Ｎｉ，Ｃｏを添加した場合の、ゲージ率Ｋおよび
抵抗温度係数Ｃｆと各元素の添加量との関係を示す特性
図である。FIG. 3 shows the relationship between the gauge ratio K, the temperature coefficient of resistance Cf, and the addition amount of each element when Ni and Co are added to a Fe-18% Cr-2.5% Si alloy. It is a characteristic view to show.
【図４】図４は、Ｆｅ−１８％Ｃｒ−２．５％Ｓｉ系合
金に、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕ，Ｔｉを
添加した場合の、ゲージ率Ｋおよび抵抗温度係数Ｃｆと
各元素の添加量との関係を示す特性図である。FIG. 4 is a gauge ratio K and resistance temperature when Mo, W, V, Nb, Ta, Mn, Cu, and Ti are added to a Fe-18% Cr-2.5% Si alloy. It is a characteristic view which shows the relationship between coefficient Cf and the addition amount of each element.
【図５】図５は、Ｆｅ−１８％Ｃｒ−２．５％Ｓｉ系合
金に、Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，Ｐｔ，Ｓ
ｎを添加した場合のゲージ率Ｋおよび抵抗温度係数Ｃｆ
と各元素の添加量との関係を示す特性図である。FIG. 5 is a graph showing the composition of Fe-18% Cr-2.5% Si alloy with Zr, Hf, Ag, Au, Al, Ge, Pt and S.
Gauge factor K and temperature coefficient of resistance Cf when n is added
It is a characteristic view which shows the relationship between the addition amount of each element.
【図６】図６は、Ｆｅ−１８％Ｃｒ−２．５％Ｓｉ系合
金に、Ｓｂ，Ｇａ，Ｉｎ，Ｃｅ，Ｂｅ，Ｂ，Ｃ，Ｎを添
加した場合のゲージ率Ｋおよび抵抗温度係数Ｃｆと各元
素との関係を示す特性図である。FIG. 6 is a gauge ratio K and a temperature coefficient of resistance when Sb, Ga, In, Ce, Be, B, C and N are added to a Fe-18% Cr-2.5% Si based alloy. It is a characteristic view which shows the relationship between Cf and each element.
【図７】図７は、合金番号２７の１０ロットについて、
加工状態の極細線のゲージ率Ｋを示す特性図である。FIG. 7 is a graph of 10 lots of alloy No. 27,
It is a characteristic view which shows the gauge factor K of the ultrafine wire in a processing state.
【図８】図８は、合金番号５８の線材よりなるストレイ
ンゲージの諸特性と加熱温度Ｔとの関係を示す特性図で
ある。FIG. 8 is a characteristic diagram showing a relationship between various characteristics of a strain gauge made of an alloy No. 58 wire material and a heating temperature T.
【図９】図９は、合金番号５８の箔材よりなるストレイ
ンゲージの諸特性と加熱温度Ｔとの関係を示す特性図で
ある。FIG. 9 is a characteristic diagram showing a relationship between various characteristics of a strain gauge made of an alloy number 58 foil material and a heating temperature T.
【図１０】図１０は、合金番号６７の薄膜よりなるスト
レインゲージの（Ａ）ゲージパターンと（Ｂ）各薄膜素
子のゲージ率Ｋを示した特性図である。FIG. 10 is a characteristic diagram showing (A) a gauge pattern of a strain gauge made of a thin film of Alloy No. 67 and (B) a gauge factor K of each thin film element.
【図１１】図１１は、合金番号６７の薄膜よりなるスト
レインゲージの諸特性と加熱温度Ｔとの関係を示す特性
図である。11 is a characteristic diagram showing a relationship between various characteristics of a strain gauge made of a thin film of Alloy No. 67 and heating temperature T. FIG.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｇ０１Ｂ 7/16 Ｇ０１Ｌ 1/22 Ｍ Ｇ０１Ｌ 1/22 Ｇ０１Ｂ 7/18 Ｇ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical display location G01B 7/16 G01L 1/22 M G01L 1/22 G01B 7/18 G
Claims (25)
１〜７％および残部Ｆｅと少量の不純物とからなり、ゲ
ージ率が２以上で、且つ比電気抵抗の温度係数が（−１
０〜１０）×１０−４／℃以内であることを特徴とする
ストレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合金。1. A weight ratio of Cr5 to 30% and Si0.5.
1 to 7% and the balance Fe and a small amount of impurities, the gauge factor is 2 or more, and the temperature coefficient of specific electrical resistance is (-1
0-10) × 10 −4 / ° C. or less, Fe—Cr—Si based alloy for strain gauge.
１〜７％と、副成分としてＮｉ，Ｃｏのそれぞれ４０％
以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞ
れ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，
Ｇｅ，白金族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇ
ａ，Ｉｎ，希土類元素のそれぞれ５％以下、Ｂｅ３％以
下，Ｂ，Ｃ，Ｎ のそれぞれ１％以下のうち１種または
２種以上の合計０．００１〜５０％および残部Ｆｅと少
量の不純物とからなり、ゲージ率が２以上で、且つ比電
気抵抗の温度係数が（−１０〜１０）×１０−４／℃以
内であることを特徴とするストレインゲージ用Ｆｅ−Ｃ
ｒ−Ｓｉ基合金。2. A weight ratio of Cr5 to 30% and Si0.5.
1 to 7%, and Ni and Co as 40% each as an accessory component
Below, Mo, W, V, Nb, Ta, Mn, and Cu are each 10% or less, and Ti, Zr, Hf, Ag, Au, Al,
7% or less of each of Ge and platinum group elements, Sn, Sb, G
a, In, 5% or less of each rare earth element, 3% or less of Be, and 1% or less of each of B, C, and N, 0.001 to 50% in total, and the balance Fe and a small amount of impurities. Fe-C for strain gauge, characterized in that the gauge factor is 2 or more, and the temperature coefficient of specific electric resistance is within (-10 to 10) x 10 -4 / ° C.
r-Si based alloy.
１〜７％と、副成分としてＮｉ４０％以下，Ｃｏ１７％
未満、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞ
れ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，
Ｇｅ，白金族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇ
ａ，Ｉｎ，希士類元素のそれぞれ５％以下、Ｂｅ３％以
下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種または２
種以上の合計０．００１〜５０％および残部Ｆｅと少量
の不純物とからなり、ゲージ率が２以上で、且つ比電気
抵抗の温度係数が（−１０〜１０）×１０−４／℃以内
であることを特徴とするストレインゲージ用Ｆｅ−Ｃｒ
−Ｓｉ基合金。3. A weight ratio of Cr5 to 30% and Si0.5.
1 to 7%, Ni 40% or less as a sub-component, Co 17%
Less than 10% or less of Mo, W, V, Nb, Ta, Mn, and Cu, Ti, Zr, Hf, Ag, Au, Al,
7% or less of each of Ge and platinum group elements, Sn, Sb, G
1% or less of 5% or less of each of a, In, and rare earth elements, 3% or less of Be, and 1% or less of each of B, C, N
It is composed of 0.001 to 50% in total of the above species and the balance Fe and a small amount of impurities, and has a gauge factor of 2 or more and a temperature coefficient of specific electrical resistance of (-10 to 10) x 10 -4 / ° C or less. Fe-Cr for strain gauges characterized by
-Si-based alloy.
１〜７％と、副成分としてＣｏ４０％以下、Ｍｏ，Ｗ，
Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔ
ｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素
のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，希土類
元素 のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，Ｃ，Ｎ
のそれぞれ１％以下のうち１種または２種以上の合計
０．００１〜５０％および残部Ｆｅと少量の不純物とか
らなり、ゲージ率が２以上で、且つ比電気抵抗の温度係
数が（−１０〜１０）×１０−４／℃以内であることを
特徴とするストレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合
金。4. A weight ratio of Cr5 to 30% and Si0.5.
1 to 7%, Co 40% or less as an accessory component, Mo, W,
Each of V, Nb, Ta, Mn and Cu is 10% or less, T
i, Zr, Hf, Ag, Au, Al, Ge, platinum group elements each 7% or less, Sn, Sb, Ga, In, rare earth elements each 5% or less, Be 3% or less, B, C, N
Of 1% or less, 0.001 to 50% in total, and the balance Fe and a small amount of impurities, the gauge factor is 2 or more, and the temperature coefficient of specific electric resistance is (-10 -10 ) × 10 −4 / ° C. or less, Fe—Cr—Si based alloy for strain gauge.
１〜７％、希土類元素０．００１〜５％と、副成分とし
てＮｉ，Ｃｏのそれぞれ４０％以下、Ｍｏ，Ｗ，Ｖ，Ｎ
ｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，Ｚ
ｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそれ
ぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，のそれぞれ５
％以下、Ｂｅ３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下
のうち１種または２種以上の合計０．００１〜５０％お
よび残部Ｆｅと少量の不純物とからなり、ゲージ率が２
以上で、且つ比電気抵抗の温度係数が（−１０〜１０）
×１０−４／℃以内であることを特徴とするストレイン
ゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合金。5. A weight ratio of Cr5 to 30% and Si0.5.
1 to 7%, 0.001 to 5% of rare earth element, and 40% or less of each of Ni and Co as auxiliary components, Mo, W, V, N
b, Ta, Mn, Cu 10% or less each, Ti, Z
r, Hf, Ag, Au, Al, Ge, 7% or less of each of the platinum group elements, and Sn, Sb, Ga, In, each of 5
% Or less, Be 3% or less, 1% or less of each of B, C, and N, and 0.001 to 50% in total, and the balance Fe and a small amount of impurities.
Above, and the temperature coefficient of the specific electric resistance is (-10 to 10)
Fe-Cr-Si based alloy for strain gauges, characterized in that it is within × 10 -4 / ° C.
１〜７％および残部Ｆｅと少量の不純物とからなる合金
組成の原料を、非酸化性ガス、還元性ガスまたは真空中
において溶解した後、適当な鋳型で鋳造し、得られたイ
ンゴットを熱間加工により所望の丸棒または板材とな
し、ついで冷間加工を施して線材または箔材となし、そ
のままか、またはこれをさらに非酸化性ガス、還元性ガ
スまたは真空中の４００℃以上１２００℃以下の温度で
加熱後冷却することを特徴とするゲージ率が２以上で、
且つ比電気抵抗の温度係数が（−１０〜１０）×１０
−４／℃以内であることを特徴とするストレインゲージ
用Ｆｅ−Ｃｒ−Ｓｉ基合金の製造法。6. A weight ratio of Cr5 to 30% and Si0.5.
A raw material having an alloy composition of 1 to 7% and the balance Fe and a small amount of impurities is melted in a non-oxidizing gas, a reducing gas or a vacuum, and then cast in an appropriate mold, and the obtained ingot is hot-worked. Formed into a desired round bar or plate, and then cold processed into a wire or foil, either as it is or in a non-oxidizing gas, reducing gas or vacuum at 400 ° C to 1200 ° C The gauge factor is 2 or more, which is characterized by heating at the temperature of and cooling.
Moreover, the temperature coefficient of the specific electric resistance is (-10 to 10) x 10
A method for producing an Fe-Cr-Si based alloy for strain gauges, characterized in that it is within -4 / ° C.
１〜７％と、副成分としてＮｉ，Ｃｏのそれぞれ４０％
以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞ
れ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，
Ｇｅ，白金族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇ
ａ，Ｉｎ，希土類元素のそれぞれ５％以下、Ｂｅ３％以
下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種または２
種以上の合計０．００１〜５０％および残部Ｆｅと少量
の不純物とからなる合金組成の原料を、非酸化性ガス、
還元性ガスまたは真空中において溶解した後、適当な鋳
型で鋳造し、得られたインゴットを熱間加工により所望
の丸棒または板材となし、ついで冷間加工を施して線材
または箔材となし、そのままか、またはこれをさらに非
酸化性ガス、還元性ガスまたは真空中の４００℃以上１
２００℃以下の温度で加熱後冷却することを特徴とする
ゲージ率が２以上で、且つ比電気抵抗の温度係数が（−
１０〜１０）×１０−４／℃以内であることを特徴とす
るストレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合金の製造
法。7. A weight ratio of Cr5 to 30% and Si0.5.
1 to 7%, and Ni and Co as 40% each as an accessory component
Below, Mo, W, V, Nb, Ta, Mn, and Cu are each 10% or less, and Ti, Zr, Hf, Ag, Au, Al,
7% or less of each of Ge and platinum group elements, Sn, Sb, G
1 or 2 out of 5% or less of a, In and rare earth elements, 3% or less of Be, and 1% or less of B, C and N, respectively.
A raw material having an alloy composition consisting of 0.001 to 50% in total of at least one kind and the balance Fe and a small amount of impurities, and a non-oxidizing gas,
After melting in a reducing gas or vacuum, cast in a suitable mold, the obtained ingot is formed into a desired round bar or plate by hot working, and then subjected to cold working to form a wire or foil, As it is, or if it is further added to a non-oxidizing gas, reducing gas or vacuum at 400 ° C or higher 1
It is characterized in that it is cooled at a temperature of 200 ° C. or lower and then cooled, and the gauge factor is 2 or more, and the temperature coefficient of specific electric resistance is (−
10 to 10) × 10 −4 / ° C. or less, a method for producing a Fe—Cr—Si based alloy for strain gauges.
１〜７％と、副成分としてＮｉ４０％以下，Ｃｏ１７％
未満、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞ
れ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，
Ｇｅ，白金族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇ
ａ，Ｉｎ，希土類元素のそれぞれ５％以下、Ｂｅ３％以
下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種または２
種以上の合計０．００１〜５０％および残部Ｆｅと少量
の不純物とからなる合金組成の原料を、非酸化性ガス、
還元性ガスまたは真空中において溶解した後、適当な鋳
型で鋳造し得られたインゴットを熱間加工により所望の
丸棒または板材となし、ついで冷間加工を施して線材ま
たは箔材となし、そのままか、またはこれをさらに非酸
化性ガス、還元性ガスまたは真空中の４００℃以上１２
００℃以下の温度で加熱後冷却することを特徴とするゲ
ージ率が２以上で、且つ比電気抵抗の温度係数が（−１
０〜１０）×１０−４／℃以内であることを特徴とする
ストレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合金の製造法。8. A weight ratio of Cr5 to 30% and Si0.5.
1 to 7%, Ni 40% or less as a sub-component, Co 17%
Less than 10% or less of Mo, W, V, Nb, Ta, Mn, and Cu, Ti, Zr, Hf, Ag, Au, Al,
7% or less of each of Ge and platinum group elements, Sn, Sb, G
1 or 2 out of 5% or less of a, In and rare earth elements, 3% or less of Be, and 1% or less of B, C and N, respectively.
A raw material having an alloy composition consisting of 0.001 to 50% in total of at least one kind and the balance Fe and a small amount of impurities, and a non-oxidizing gas,
After melting in reducing gas or vacuum, cast in an appropriate mold to obtain the ingot, which is then hot-worked into the desired round bar or plate material, and then cold-worked into the wire or foil material, as is. Or, in addition to this, in a non-oxidizing gas, reducing gas or vacuum at 400 ° C or higher 12
The gauge factor is 2 or more, which is characterized by heating and cooling at a temperature of 00 ° C. or less, and the temperature coefficient of specific electrical resistance is (−1
0 to 10) × 10 −4 / ° C. or less, a method for producing a Fe—Cr—Si based alloy for strain gauges.
１〜７％と、副成分としてＣｏ４０％以下、Ｍｏ，Ｗ，
Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔ
ｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素
のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，希土類
元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，Ｃ，Ｎの
それぞれ１％以下のうち１種または２種以上の合計０．
００１〜５０％および残部Ｆｅと少量の不純物とからな
る合金組成の原料を、非酸化性ガス、還元性ガスまたは
真空中において溶解した後、適当な鋳型で鋳造し、得ら
れたインゴットを熱間加工により所望の丸棒または板材
となし、ついで冷間加工を施して線材または箔材とな
し、そのままか，またはこれをさらに非酸化性ガス、還
元性ガスまたは真空中の４００℃以上１２００℃以下の
温度で適当な時間加熱後冷却することを特徴とするゲー
ジ率が２以上で、且つ比電気抵抗の温度係数が（−１０
〜１０）×１０−４／℃以内であるストレインゲージ用
Ｆｅ−Ｃｒ−Ｓｉ基合金の製造法。9. A weight ratio of Cr5 to 30% and Si0.5.
1 to 7%, Co 40% or less as an accessory component, Mo, W,
Each of V, Nb, Ta, Mn and Cu is 10% or less, T
i, Zr, Hf, Ag, Au, Al, Ge, platinum group elements each 7% or less, Sn, Sb, Ga, In, rare earth element each 5% or less, Be 3% or less, B, C, N respectively. 1% or less out of 1% or a total of 0 or more.
A raw material having an alloy composition of 001 to 50% and the balance Fe and a small amount of impurities is melted in a non-oxidizing gas, a reducing gas or a vacuum and then cast in an appropriate mold, and the obtained ingot is hot-rolled. Formed into a desired round bar or plate, and then subjected to cold working to form a wire or foil, either as it is or in a non-oxidizing gas, reducing gas or vacuum at 400 ° C to 1200 ° C Which has a gauge factor of 2 or more, and a specific electric resistance having a temperature coefficient of (-10).
-10 ) The manufacturing method of the Fe-Cr-Si base alloy for strain gauges which is 10 * 10 < -4 > / degreeC or less.
５１〜７％、希土類元素０．００１〜５％と、副成分と
してＮｉ，Ｃｏのそれぞれ４０％以下、Ｍｏ，Ｗ，Ｖ，
Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，
Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそ
れぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎのそれぞれ５
％以下、Ｂｅ３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下
のうち１種または２種以上の合計０．００１〜５０％お
よび残部Ｆｅと少量の不純物とからなる合金組成の原料
を、非酸化性ガス、還元性ガスまたは真空中において溶
解した後、適当な鋳型で鋳造し、得られたインゴットを
熱間加工により所望の丸棒または板材となし、ついで冷
間加工を施して線材または箔材となし、そのままか、ま
たはこれをさらに非酸化性ガス、還元性ガスまたは真空
中の４００℃以上１２００℃以下の温度で加熱後冷却す
ることを特徴とするゲージ率が２以上で、且つ比電気抵
抗の温度係数が（−１０〜１０）×１０−４／℃以内で
あるストレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合金の製造
法。10. A weight ratio of Cr5 to 30%, Si0.
51 to 7%, 0.001 to 5% rare earth element, and 40% or less of each of Ni and Co as secondary components, Mo, W, V,
Nb, Ta, Mn, and Cu are each 10% or less, Ti,
Zr, Hf, Ag, Au, Al, Ge, 7% or less of each of the platinum group elements, Sn, Sb, Ga, In of 5 each
% Or less, 3% or less Be, 1% or less of each of B, C, and N, and 0.001 to 50% in total of 1 type or 2 types or more, and a raw material having an alloy composition consisting of the balance Fe and a small amount of impurities. After melting in oxidizing gas, reducing gas or vacuum, cast it in a suitable mold, hot-work the desired ingot into a desired round bar or plate, and then cold-work it into a wire or foil. The material has a gauge factor of 2 or more and a ratio of 2 or more and a ratio of 2 or more, which is characterized in that it is used as a material, or as it is, or is further heated at a temperature of 400 ° C. to 1200 ° C. in a non-oxidizing gas, reducing gas or vacuum A method for producing an Fe-Cr-Si-based alloy for strain gauges, which has a temperature coefficient of electric resistance within (-10 to 10) x 10-4 / C.
５１〜７％および残部Ｆｅと少量の不純物とからなり、
ゲージ率が２以上で、且つ比電気抵抗の温度係数が（−
１０〜１０）×１０−４／℃以内であるストレインゲー
ジ用Ｆｅ−Ｃｒ−Ｓｉ基合金の線材、箔材または薄膜の
いずれかよりなるストレインゲージ。11. A weight ratio of Cr5 to 30%, Si0.
51 to 7% and the balance Fe and a small amount of impurities,
The gauge factor is 2 or more, and the temperature coefficient of specific electrical resistance is (-
10 to 10) × 10 −4 / ° C. Within a strain gauge, a strain gauge made of a wire material, a foil material or a thin film of a Fe—Cr—Si based alloy.
５１〜７％と、副成分としてＮｉ，Ｃｏのそれぞれ４０
％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれ
ぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａ
ｌ，Ｇｅ，白金族元素のそれぞれ７％以下、Ｓｎ，Ｓ
ｂ，Ｇａ，Ｉｎ，希土類元素のそれぞれ５％以下、Ｂｅ
３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種ま
たは２種以上の合計０．００１〜５０％および残部Ｆｅ
と少量の不純物とからなり、ゲージ率が２以上で、且つ
比電気抵抗の温度係数が（−１０〜１０）×１０−４／
℃以内であるストレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基の
線材、箔材または薄膜のいずれかよりなるストレインゲ
ージ。12. A weight ratio of Cr5 to 30%, Si0.
51 to 7%, and Ni and Co of 40 each as an accessory component
% Or less, Mo, W, V, Nb, Ta, Mn and Cu each 10% or less, Ti, Zr, Hf, Ag, Au, A
l, Ge, 7% or less of each of the platinum group elements, Sn, S
b, Ga, In, 5% or less of each of rare earth elements, Be
3% or less, 1% or less of each of B, C and N of 1% or less, 0.001 to 50% in total and the balance Fe
And a small amount of impurities, the gauge factor is 2 or more, and the temperature coefficient of specific electric resistance is (-10 to 10) x 10 -4 /
A strain gauge made of an Fe-Cr-Si-based wire rod, foil material or thin film for strain gauges, which is within the temperature range of ℃.
５１〜７％と、副成分としてＮｉ４０％以下，Ｃｏ１７
％未満、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれ
ぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａ
ｌ，Ｇｅ，白金族元素のそれぞれ７％以下、Ｓｎ，Ｓ
ｂ，Ｇａ，Ｉｎ，希土類元素のそれぞれ５％以下、Ｂｅ
３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種ま
たは２種以上の合計０．００１〜５０％および残部Ｆｅ
と少量の不純物とからなり、ゲージ率が２以上で、且つ
比電気抵抗の温度係数が（−１０〜１０）×１０−４／
℃以内であるストレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合
金の線材、箔材または薄膜のいずれかよりなるストレイ
ンゲージ。13. A weight ratio of Cr 5 to 30%, Si 0.
51 to 7%, Ni 40% or less as an accessory component, Co17
%, Less than 10% of Mo, W, V, Nb, Ta, Mn, and Cu, Ti, Zr, Hf, Ag, Au, A
l, Ge, 7% or less of each of the platinum group elements, Sn, S
b, Ga, In, 5% or less of each of rare earth elements, Be
3% or less, 1% or less of each of B, C and N of 1% or less, 0.001 to 50% in total and the balance Fe
And a small amount of impurities, the gauge factor is 2 or more, and the temperature coefficient of specific electric resistance is (-10 to 10) x 10 -4 /
A strain gauge made of a wire material, a foil material, or a thin film of a Fe-Cr-Si-based alloy for a strain gauge, which is within a temperature of 0 ° C.
５１〜７％と、副成分としてＣｏ４０％以下、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，
希土類元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，
Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以上の
合計０．００１〜５０％および残部Ｆｅと少量の不純物
とからなり、ゲージ率が２以上で、且つ比電気抵抗の温
度係数が（−１０〜１０）×１０−４／℃以内であるス
トレインゲージ用Ｆｅ−Ｃｒ−Ｓｉ基合金の線材、箔材
または薄膜のいずれかよりなるストレインゲージ。14. A weight ratio of Cr5 to 30%, Si0.
51 to 7%, Co 40% or less as an accessory component, Mo,
W, V, Nb, Ta, Mn, and Cu are each 10% or less, Ti, Zr, Hf, Ag, Au, Al, Ge, and platinum group elements are each 7% or less, Sn, Sb, Ga, In,
5% or less for each rare earth element, 3% or less for Be, B,
Of 1% or less of each of C and N, one or more of 0.001 to 50% in total and the balance Fe and a small amount of impurities, a gauge factor of 2 or more, and a temperature coefficient of specific electrical resistance A strain gauge consisting of a wire material, a foil material or a thin film of a Fe-Cr-Si based alloy for strain gauge, which is within (-10 to 10) x 10-4 / C.
５１〜７％、希土類元素０．００１〜５％と、副成分と
してＮｉ，Ｃｏのそれぞれ４０％以下、Ｍｏ，Ｗ，Ｖ，
Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，
Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそ
れぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎのそれぞれ５
％以下、Ｂｅ３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下
のうち１種または２種以上の合計０．００１〜５０％お
よび残部Ｆｅと少量の不純物とからなり、ゲージ率が２
以上で、且つ比電気抵抗の温度係数が（−１０〜１０）
×１０−４／℃以内であるストレインゲージ用Ｆｅ−Ｃ
ｒ−Ｓｉ基合金の線材、箔材または薄膜のいづれかより
なるストレインゲージ。15. A weight ratio of Cr5 to 30%, Si0.
51 to 7%, 0.001 to 5% rare earth element, and 40% or less of each of Ni and Co as secondary components, Mo, W, V,
Nb, Ta, Mn, and Cu are each 10% or less, Ti,
Zr, Hf, Ag, Au, Al, Ge, 7% or less of each of the platinum group elements, Sn, Sb, Ga, In of 5 each
% Or less, Be 3% or less, 1% or less of each of B, C, and N, and 0.001 to 50% in total, and the balance Fe and a small amount of impurities.
Above, and the temperature coefficient of the specific electric resistance is (-10 to 10)
Fe-C for strain gauges within x10 -4 / ° C
A strain gauge made of an r-Si based alloy wire, foil or thin film.
５１〜７％および残部Ｆｅと少量の不純物とからなるＦ
ｅ−Ｃｒ−Ｓｉ基合金の線材または箔材を、適当なベー
ス面に貼付して素子となし、そのままか、または必要な
らばさらに温度補償として、該素子と直角成分の素子を
同一面内に構築してゲージパターンを形成したことを特
徴とするストレインゲージ。16. A weight ratio of Cr5 to 30%, Si0.
F consisting of 51 to 7% and the balance Fe and a small amount of impurities
An e-Cr-Si-based alloy wire or foil is attached to a suitable base surface to form an element, and as it is, or if necessary, as temperature compensation, the element and the element having a right angle component are placed in the same plane. A strain gauge that is constructed and formed into a gauge pattern.
５１〜７％と、副成分としてＮｉ，Ｃｏのそれぞれ４０
％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれ
ぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａ
ｌ，Ｇｅ，白金族元素のそれぞれ７％以下、Ｓｎ，Ｓ
ｂ，Ｇａ，Ｉｎ，希土類元素のそれぞれ５％以下、Ｂｅ
３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種ま
たは２種以上の合計０．００１〜５０％および残部Ｆｅ
と少量の不純物とからなるＦｅ−Ｃｒ−Ｓｉ基合金の線
材または箔材を、適当なベース面に貼付して素子とな
し、そのままか、または必要ならばさらに温度補償とし
て、該素子と直角成分の素子を同一面内に構築してゲー
ジパターンを形成したことを特徴とするストレインゲー
ジ。17. A weight ratio of Cr5 to 30%, Si0.
51 to 7%, and Ni and Co of 40 each as an accessory component
% Or less, Mo, W, V, Nb, Ta, Mn and Cu each 10% or less, Ti, Zr, Hf, Ag, Au, A
l, Ge, 7% or less of each of the platinum group elements, Sn, S
b, Ga, In, 5% or less of each of rare earth elements, Be
3% or less, 1% or less of each of B, C and N of 1% or less, 0.001 to 50% in total and the balance Fe
And a small amount of impurities, a wire or foil of an Fe-Cr-Si-based alloy is attached to a suitable base surface to form an element, and as it is, or if necessary, as temperature compensation, a component perpendicular to the element is formed. A strain gauge characterized in that a gauge pattern is formed by constructing the above elements in the same plane.
５１〜７％と、副成分としてＮｉ４０％以下，Ｃｏ１７
％未満、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれ
ぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａ
ｌ，Ｇｅ，白金族元素のそれぞれ７％以下、Ｓｎ，Ｓ
ｂ，Ｇａ，Ｉｎ，希土類元素のそれぞれ５％以下、Ｂｅ
３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種ま
たは２種以上の合計０．００１〜５０％および残部Ｆｅ
と少量の不純物とからなるＦｅ−Ｃｒ−Ｓｉ基合金の線
材または箔材を、適当なベース面に貼付して素子とな
し、そのままか、または必要ならばさらに温度補償とし
て、該素子と直角成分の素子を同一面内に構築してゲー
ジパターンを形成したことを特徴とするストレインゲー
ジ。18. A weight ratio of Cr5 to 30%, Si0.
51 to 7%, Ni 40% or less as an accessory component, Co17
%, Less than 10% of Mo, W, V, Nb, Ta, Mn, and Cu, Ti, Zr, Hf, Ag, Au, A
l, Ge, 7% or less of each of the platinum group elements, Sn, S
b, Ga, In, 5% or less of each of rare earth elements, Be
3% or less, 1% or less of each of B, C and N of 1% or less, 0.001 to 50% in total and the balance Fe
And a small amount of impurities, a wire or foil of an Fe-Cr-Si-based alloy is attached to a suitable base surface to form an element, and as it is, or if necessary, as temperature compensation, a component perpendicular to the element is formed. A strain gauge characterized in that a gauge pattern is formed by constructing the above elements in the same plane.
５１〜７％と、副成分としてＣｏ４０％以下、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，
希土類元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，
Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以上の
合計０．００１〜５０％および残部Ｆｅと少量の不純物
とからなるＦｅ−Ｃｒ−Ｓｉ基合金の線材または箔材
を、適当なベース面に貼付して素子となし、そのまま
か、または必要ならばさらに温度補償として、該素子と
直角成分の素子を同一面内に構築してゲージパターンを
形成したことを特徴とするストレインゲージ。19. A weight ratio of Cr5 to 30%, Si0.
51 to 7%, Co 40% or less as an accessory component, Mo,
W, V, Nb, Ta, Mn, and Cu are each 10% or less, Ti, Zr, Hf, Ag, Au, Al, Ge, and platinum group elements are each 7% or less, Sn, Sb, Ga, In,
5% or less for each rare earth element, 3% or less for Be, B,
A wire or foil material of a Fe-Cr-Si based alloy consisting of 0.001 to 50% in total of 1 or 2 or more of 1% or less of C and N and the balance Fe and a small amount of impurities is suitable. A strain gauge characterized in that a gauge pattern is formed by adhering to a base surface to form an element, as it is, or, if necessary, as temperature compensation, by constructing an element having a component orthogonal to the element in the same plane.
５１〜７％、希土類元素０．００１〜５％と、副成分と
してＮｉ，Ｃｏのそれぞれ４０％以下、Ｍｏ，Ｗ，Ｖ，
Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，
Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそ
れぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎのそれぞれ５
％以下、Ｂｅ３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下
のうち１種または２種以上の合計０．００１〜５０％お
よび残部Ｆｅと少量の不純物とからなるＦｅ−Ｃｒ−Ｓ
ｉ基合金の線材または箔材を、適当なベース面に貼付し
て素子となし、そのままか、または必要ならばさらに温
度補償として、該素子と直角成分の素子を同一面内に構
築してゲージパターンを形成したことを特徴とするスト
レインゲージ。20. The weight ratio of Cr5 to 30%, Si0.
51 to 7%, 0.001 to 5% rare earth element, and 40% or less of each of Ni and Co as secondary components, Mo, W, V,
Nb, Ta, Mn, and Cu are each 10% or less, Ti,
Zr, Hf, Ag, Au, Al, Ge, 7% or less of each of the platinum group elements, Sn, Sb, Ga, In of 5 each
% Or less, Be 3% or less, 1% or less of each of B, C, and N, and 0.001 to 50% in total, and Fe-Cr-S composed of the balance Fe and a small amount of impurities.
A wire or foil of i-based alloy is attached to a suitable base surface to form an element, and as it is, or if necessary, as temperature compensation, an element having a component orthogonal to the element is constructed in the same plane to form a gauge. A strain gauge characterized by forming a pattern.
５１〜７％および残部Ｆｅと少量の不純物とからなるＦ
ｅ−Ｃｒ−Ｓｉ基合金を、電着、蒸着、無電解メッキま
たはスパッタリングより選択した方法で、所望の形状に
薄膜を形成するかまたは薄膜を形成後所望の形状に打ち
抜き、フォトエッチングまたはトリミングなどの加工を
施して素子となし、必要ならば温度補償として、該素子
と直角成分の素子を同一面内に構築してゲージパターン
を形成し、さらに電極を構成し、そのままか、またはこ
れをさらに非酸化性ガス、還元性ガスまたは真空中で熱
処理を施したことを特徴とする薄膜ストレインゲージ。21. A weight ratio of Cr5 to 30%, Si0.
F consisting of 51 to 7% and the balance Fe and a small amount of impurities
An e-Cr-Si based alloy is formed by a method selected from electrodeposition, vapor deposition, electroless plating or sputtering to form a thin film in a desired shape, or after the thin film is formed, punched into a desired shape, photoetching or trimming. Is processed to form an element, and if necessary, as temperature compensation, an element having a component orthogonal to the element is constructed in the same plane to form a gauge pattern, and then an electrode is formed, either as it is or further. A thin film strain gauge characterized by being heat-treated in a non-oxidizing gas, a reducing gas or in a vacuum.
５１〜７％と、副成分としてＮｉ，Ｃｏのそれぞれ４０
％以下、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれ
ぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａ
ｌ，Ｇｅ，白金族元素のそれぞれ７％以下、Ｓｎ，Ｓ
ｂ，Ｇａ，Ｉｎ，希土類元素のそれぞれ５％以下、Ｂｅ
３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種ま
たは２種以上の合計０．００１〜５０％および残部Ｆｅ
と少量の不純物とからなるＦｅ−Ｃｒ−Ｓｉ基合金を、
電着、蒸着、無電解メッキまたはスパッタリングより選
択した方法で、所望の形状に薄膜を形成するかまたは薄
膜を形成後所望の形状に打ち抜き、フォトエッチングま
たはトリミングなどの加工を施して素子となし、必要な
らば温度補償として、該素子と直角成分の素子を同一面
内に構築してゲージパターンを形成し、さらに電極を構
成し、そのままか、またはこれをさらに非酸化性ガス、
還元性ガスまたは真空中で熱処理を施したことを特徴と
する薄膜ストレインゲージ。22. A weight ratio of Cr 5 to 30%, Si 0.
51 to 7%, and Ni and Co of 40 each as an accessory component
% Or less, Mo, W, V, Nb, Ta, Mn and Cu each 10% or less, Ti, Zr, Hf, Ag, Au, A
l, Ge, 7% or less of each of the platinum group elements, Sn, S
b, Ga, In, 5% or less of each of rare earth elements, Be
3% or less, 1% or less of each of B, C and N of 1% or less, 0.001 to 50% in total and the balance Fe
And an Fe-Cr-Si based alloy consisting of a small amount of impurities,
By a method selected from electrodeposition, vapor deposition, electroless plating or sputtering, a thin film is formed into a desired shape or punched into a desired shape after forming the thin film and subjected to processing such as photo etching or trimming to form an element, If necessary, as a temperature compensation, an element having a component orthogonal to the element is constructed in the same plane to form a gauge pattern, and further an electrode is formed, either as it is or as a non-oxidizing gas,
A thin film strain gauge characterized by being heat-treated in a reducing gas or vacuum.
５１〜７％と、副成分としてＮｉ４０％以下，Ｃｏ１７
％未満、Ｍｏ，Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれ
ぞれ１０％以下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａ
ｌ，Ｇｅ，白金族元素のそれぞれ７％以下、Ｓｎ，Ｓ
ｂ，Ｇａ，Ｉｎ，希土類元素のそれぞれ５％以下、Ｂｅ
３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以下のうち１種ま
たは２種以上の合計０．００１〜５０％および残部Ｆｅ
と少量の不純物とからなるＦｅ−Ｃｒ−Ｓｉ基合金を、
電着、蒸着、無電解メッキまたはスパッタリングより選
択した方法で、所望の形状に薄膜を形成するかまたは薄
膜を形成後所望の形状に打ち抜き、フォトエッチングま
たはトリミングなどの加工を施して素子となし、必要な
らば温度補償として、該素子と直角成分の素子を同一面
内に構築してゲージパターンを形成し、さらに電極を構
成し、そのままか、またはこれをさらに非酸化性ガス、
還元性ガスまたは真空中で熱処理を施したことを特徴と
する薄膜ストレインゲージ。23. A weight ratio of Cr 5 to 30%, Si 0.
51 to 7%, Ni 40% or less as an accessory component, Co17
%, Less than 10% of Mo, W, V, Nb, Ta, Mn, and Cu, Ti, Zr, Hf, Ag, Au, A
l, Ge, 7% or less of each of the platinum group elements, Sn, S
b, Ga, In, 5% or less of each of rare earth elements, Be
3% or less, 1% or less of each of B, C and N of 1% or less, 0.001 to 50% in total and the balance Fe
And an Fe-Cr-Si based alloy consisting of a small amount of impurities,
By a method selected from electrodeposition, vapor deposition, electroless plating or sputtering, a thin film is formed into a desired shape or punched into a desired shape after the thin film is formed, and a device such as photoetching or trimming is formed into an element, If necessary, as a temperature compensation, an element having a component orthogonal to the element is constructed in the same plane to form a gauge pattern, and further an electrode is formed, either as it is or as a non-oxidizing gas,
A thin film strain gauge characterized by being heat-treated in a reducing gas or vacuum.
５１〜７％と、副成分としてＣｏ４０％以下、Ｍｏ，
Ｗ，Ｖ，Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以
下、Ｔｉ，Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金
族元素のそれぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，
希土類元素のそれぞれ５％以下、Ｂｅ３％以下，Ｂ，
Ｃ，Ｎのそれぞれ１％以下のうち１種または２種以上の
合計０．００１〜５０％および残部Ｆｅと少量の不純物
とからなるＦｅ−Ｃｒ−Ｓｉ基合金を、電着、蒸着、無
電解メッキまたはスパッタリングより選択した方法で、
所望の形状に薄膜を形成するかまたは薄膜を形成後所望
の形状に打ち抜き、フォトエッチングまたはトリミング
などの加工を施して素子となし、必要ならば温度補償と
して、該素子と直角成分の素子を同一面内に構築してゲ
ージパターンを形成し、さらに電極を構成し、そのまま
か、またはこれをさらに非酸化性ガス、還元性ガスまた
は真空中で熱処理を施したことを特徴とする薄膜ストレ
インゲージ。24. A weight ratio of Cr5 to 30%, Si0.
51 to 7%, Co 40% or less as an accessory component, Mo,
W, V, Nb, Ta, Mn, and Cu are each 10% or less, Ti, Zr, Hf, Ag, Au, Al, Ge, and platinum group elements are each 7% or less, Sn, Sb, Ga, In,
5% or less for each rare earth element, 3% or less for Be, B,
Fe-Cr-Si based alloys consisting of 0.001 to 50% of one or two or more of 1% or less of C and N respectively and the balance Fe and a small amount of impurities are electrodeposited, vapor-deposited and electroless. By the method selected from plating or sputtering,
Form a thin film in the desired shape, or after forming the thin film, punch it into the desired shape and apply photo-etching or trimming to make it into an element. A thin film strain gauge characterized by being constructed in-plane to form a gauge pattern, and further constituting an electrode, which is either directly or further heat-treated in a non-oxidizing gas, a reducing gas or in a vacuum.
５１〜７％、希土類元素０．００１〜５％と、副成分と
してＮｉ，Ｃｏのそれぞれ４０％以下、Ｍｏ，Ｗ，Ｖ，
Ｎｂ，Ｔａ，Ｍｎ，Ｃｕのそれぞれ１０％以下、Ｔｉ，
Ｚｒ，Ｈｆ，Ａｇ，Ａｕ，Ａｌ，Ｇｅ，白金族元素のそ
れぞれ７％以下、Ｓｎ，Ｓｂ，Ｇａ，Ｉｎ，のそれぞれ
５％以下、Ｂｅ３％以下，Ｂ，Ｃ，Ｎのそれぞれ１％以
下のうち１種または２種以上の合計０．００１〜５０％
および残部Ｆｅと少量の不純物とからなるＦｅ−Ｃｒ−
Ｓｉ基合金を、電着、蒸着、無電解メッキまたはスパッ
タリングより選択した方法で、所望の形状に薄膜を形成
するかまたは薄膜を形成後所望の形状に打ち抜き、フォ
トエッチングまたはトリミングなどの加工を施して素子
となし、必要ならば温度補償として、該素子と直角成分
の素子を同一面内に構築してゲージパターンを形成し、
さらに電極を構成し、そのままか、またはこれをさらに
非酸化性ガス、還元性ガスまたは真空中で熱処理を施し
たことを特徴とする薄膜ストレインゲージ。25. A weight ratio of Cr5 to 30%, Si0.
51 to 7%, 0.001 to 5% rare earth element, and 40% or less of each of Ni and Co as secondary components, Mo, W, V,
Nb, Ta, Mn, and Cu are each 10% or less, Ti,
Zr, Hf, Ag, Au, Al, Ge, platinum group elements each 7% or less, Sn, Sb, Ga, In, each 5% or less, Be 3% or less, B, C, N each 1% or less. 0.001 to 50% of one or more of them in total
And Fe-Cr- consisting of the balance Fe and a small amount of impurities
A Si-based alloy is formed by a method selected from electrodeposition, vapor deposition, electroless plating or sputtering to form a thin film in a desired shape, or after the thin film is formed, punched into a desired shape and subjected to processing such as photoetching or trimming. To form a gauge pattern by constructing the element of the component orthogonal to the element in the same plane as temperature compensation if necessary.
A thin film strain gauge, which further comprises an electrode and is heat-treated as it is or in a non-oxidizing gas, a reducing gas or a vacuum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22959195A JPH0941100A (en) | 1995-08-03 | 1995-08-03 | Iron-chromium-silicon base alloy and its production and strain gauge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22959195A JPH0941100A (en) | 1995-08-03 | 1995-08-03 | Iron-chromium-silicon base alloy and its production and strain gauge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0941100A true JPH0941100A (en) | 1997-02-10 |
Family
ID=16894588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22959195A Withdrawn JPH0941100A (en) | 1995-08-03 | 1995-08-03 | Iron-chromium-silicon base alloy and its production and strain gauge |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0941100A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11256284A (en) * | 1998-03-13 | 1999-09-21 | Nisshin Steel Co Ltd | Ferritic stainless steel excellent in antibacterial characteristic |
| EP1329531A2 (en) * | 1997-09-22 | 2003-07-23 | National Research Institute For Metals | Ferritic heat-resistant steel and method for producing it |
| DE10228210A1 (en) * | 2002-06-24 | 2004-01-22 | Thyssenkrupp Nirosta Gmbh | Iron-based steel sheet or strip, used in the production of components for exhaust gas pipes, turbochargers and catalytic converters of I.C. engines, contains alloying additions of chromium, nickel, silicon, manganese and zirconium |
| JP2005069685A (en) * | 2003-06-24 | 2005-03-17 | Osaka Prefecture | Pressure sensor integrated with pressure receiving pipe |
| DE19941411B4 (en) * | 1998-08-31 | 2005-03-31 | Japan, vertreten durch den Generaldirektor des Nationalen Metallforschungsinstitutes, Tsukuba | Turbine or boiler component |
| JP2007071594A (en) * | 2005-09-05 | 2007-03-22 | Nitta Ind Corp | Manufacturing method of dynamic quantity sensor |
| CN102230141A (en) * | 2010-04-28 | 2011-11-02 | 鞍钢集团矿业公司 | Heat resistant steel for grate plate of chain grate machine |
| CN102719708A (en) * | 2012-07-12 | 2012-10-10 | 丹阳市协昌合金有限公司 | Laser-cladding high-toughness high-hardness nickel-base alloy powder and preparation method thereof |
| DE10208855B4 (en) * | 2001-03-02 | 2013-01-03 | Sanyo Special Steel Co., Ltd. | High strength alloy with low thermal expansion and improved torsional properties, as well as wire of said alloy |
| CN105177425A (en) * | 2015-09-26 | 2015-12-23 | 哈尔滨工程大学 | Strengthening low-alloy steel containing copper nanophase and preparation method thereof |
| JP2016074934A (en) * | 2014-10-03 | 2016-05-12 | 株式会社東京測器研究所 | Alloy for strain gauge and strain gauge |
| JP2022501515A (en) * | 2018-09-28 | 2022-01-06 | コーニング インコーポレイテッド | Alloy metals with increased austenite transformation temperature and articles containing them |
| JP2023020772A (en) * | 2021-07-28 | 2023-02-09 | 國立清華大學 | High chromium and silicon-rich corrosion resistant steel and use application thereof |
-
1995
- 1995-08-03 JP JP22959195A patent/JPH0941100A/en not_active Withdrawn
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1329531A2 (en) * | 1997-09-22 | 2003-07-23 | National Research Institute For Metals | Ferritic heat-resistant steel and method for producing it |
| EP1329532A2 (en) * | 1997-09-22 | 2003-07-23 | National Research Institute For Metals | Ferritic heat-resistant steel and method for producing it |
| EP1329532A3 (en) * | 1997-09-22 | 2003-07-30 | National Research Institute For Metals | Ferritic heat-resistant steel and method for producing it |
| EP1329531A3 (en) * | 1997-09-22 | 2003-07-30 | National Research Institute For Metals | Ferritic heat-resistant steel and method for producing it |
| JPH11256284A (en) * | 1998-03-13 | 1999-09-21 | Nisshin Steel Co Ltd | Ferritic stainless steel excellent in antibacterial characteristic |
| DE19941411B4 (en) * | 1998-08-31 | 2005-03-31 | Japan, vertreten durch den Generaldirektor des Nationalen Metallforschungsinstitutes, Tsukuba | Turbine or boiler component |
| DE10208855B4 (en) * | 2001-03-02 | 2013-01-03 | Sanyo Special Steel Co., Ltd. | High strength alloy with low thermal expansion and improved torsional properties, as well as wire of said alloy |
| DE10228210B4 (en) * | 2002-06-24 | 2012-09-13 | Thyssenkrupp Nirosta Gmbh | Heat-resistant sheet steel or strip and components made from them |
| DE10228210A1 (en) * | 2002-06-24 | 2004-01-22 | Thyssenkrupp Nirosta Gmbh | Iron-based steel sheet or strip, used in the production of components for exhaust gas pipes, turbochargers and catalytic converters of I.C. engines, contains alloying additions of chromium, nickel, silicon, manganese and zirconium |
| JP2005069685A (en) * | 2003-06-24 | 2005-03-17 | Osaka Prefecture | Pressure sensor integrated with pressure receiving pipe |
| JP2007071594A (en) * | 2005-09-05 | 2007-03-22 | Nitta Ind Corp | Manufacturing method of dynamic quantity sensor |
| CN102230141A (en) * | 2010-04-28 | 2011-11-02 | 鞍钢集团矿业公司 | Heat resistant steel for grate plate of chain grate machine |
| CN102719708A (en) * | 2012-07-12 | 2012-10-10 | 丹阳市协昌合金有限公司 | Laser-cladding high-toughness high-hardness nickel-base alloy powder and preparation method thereof |
| JP2016074934A (en) * | 2014-10-03 | 2016-05-12 | 株式会社東京測器研究所 | Alloy for strain gauge and strain gauge |
| CN105177425A (en) * | 2015-09-26 | 2015-12-23 | 哈尔滨工程大学 | Strengthening low-alloy steel containing copper nanophase and preparation method thereof |
| JP2022501515A (en) * | 2018-09-28 | 2022-01-06 | コーニング インコーポレイテッド | Alloy metals with increased austenite transformation temperature and articles containing them |
| JP2023020772A (en) * | 2021-07-28 | 2023-02-09 | 國立清華大學 | High chromium and silicon-rich corrosion resistant steel and use application thereof |
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