JPH09331134A - Wiring board for manufacture of board, board and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable a wiring board which is excellent in dimensional accuracy and mechanical processability to be manufactured high in yield by a method wherein a large number of metal fine wires are baked in a burned columnar porous body of inorganic insulating material in parallel with its axis. SOLUTION: A wiring pattern 17 is required to be formed on the surface of a board so as to mount a semiconductor chip 15 on the board. The wiring pattern 17 is formed on the board, the semiconductor chip 15 is mounted on the board, and bumps 19 such as solder balls are formed to form a BGA-type semiconductor device 21. Moreover, it is preferable that voids inside an inorganic insulator 12 are impregnated with polyimide resin or the like after the wiring pattern 17 and others are formed art the board. A columnar body is sliced into boards, but the boards are comparatively fragile as many voids are present inside them. When the board is impregnated with resin, it is improved in strength. The board is baked as kept high in void volume, so that it can be much lessened in shrinkage factor at baking, and the board excellent in dimensional accuracy can be obtained.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a wiring body for manufacturing a substrate,
The present invention relates to a substrate and a manufacturing method thereof.

[0002]

BACKGROUND OF THE INVENTION The inventor previously arranged a number of fine metal wires such as copper in a container so as to be parallel to the axis of the container, and filled the container with a dispersion liquid of high temperature fired ceramic powder such as alumina, After drying, the high-temperature fired ceramic powder is fired under a high-temperature condition higher than the melting point of the metal fine wire, which is necessary and sufficient to sinter sufficiently densely, to obtain a dense columnar sintered body, which is perpendicular to the axis. We have developed a method to obtain a substrate with via conductors that are sliced and penetrated. According to this method, since the thin metal wires are liquefied during sintering of the high-temperature fired ceramic powder, a substrate having a dense pattern of via conductors can be manufactured without disconnection due to shrinkage of the ceramic during firing. It has also been confirmed that the liquefied fine metal wires do not diffuse into the ceramic.

Further, the inventor has arranged a number of fine metal wires such as copper in a container so as to be parallel to the axis of the container, and filled the low temperature fired ceramic powder containing glass as a main component in the container to obtain fine metal wires. We developed a method to obtain a columnar sintered body by firing at a temperature lower than the melting point of, and slice the columnar body perpendicular to the axis to obtain a substrate having a penetrating via conductor. According to this method, on the contrary, since the low-temperature fired ceramic powder mainly composed of glass is melted at the time of firing, no stress is applied to the thin metal wires, and a substrate having via conductors which are not broken can be obtained.

[0004]

However, in the case of the former method, there is a problem that the dimensional accuracy is not high because the high-temperature fired ceramic shrinks with a shrinkage ratio of about 40%. In addition, since it is baked densely, it has extremely high hardness and cannot be easily sliced. There is a problem that when an additive is added to lower the hardness, the strength is reduced. In the latter method, since a low-temperature fired ceramic mainly composed of glass is used, there is a problem that it is fragile and has low strength. Therefore, the present invention has been made to solve the above problems, and an object of the present invention is to provide a columnar body for producing a substrate, which has good dimensional accuracy and excellent machinability, and a substrate and these, which can be produced with high productivity. It is to provide a manufacturing method.

[0005]

The present invention has the following constitution in order to achieve the above object. That is, the substrate manufacturing wiring body according to the present invention is characterized in that a plurality of thin metal wires are embedded in parallel to the axis of the columnar body in the columnar body made of a porous sintered inorganic insulator. There is. The porosity of the inorganic insulator fired to be porous is 20% by volume or more and 5
It is preferably 0% by volume or less. Since it is fired porous, the hardness is not so high, the workability is easy, and the substrate can be easily sliced to obtain a substrate. Also, the shrinkage is extremely low, and the dimensional accuracy of the via conductor is good. In addition, since the inorganic insulator has a skeleton structure forming a continuous phase, it is excellent in strength. When the porosity of the columnar body is 50% or more, it is not easy to set conditions during firing, the porosity varies, and reproducibility deteriorates. When the porosity is around 40%, there is almost no shrinkage during firing, and the dimensional accuracy is good. If the porosity is less than 20%, densification proceeds to some extent and shrinkage occurs, which may cause a problem in dimensional accuracy. In addition, some of the pores in the inorganic insulator are not continuous pores, so that the resin is not partially impregnated.

By embedding a rod made of ceramic, metal or a composite of ceramic and metal in the columnar body in parallel with the axis thereof, when the substrate is sliced and formed on a substrate, the ceramic, metal, or metal or metal may be used. Can be used as a heat radiator of a semiconductor chip on which the composite portion of the above is mounted. By providing a through-hole in the columnar body in parallel with the axis thereof, when the substrate is sliced and formed on a substrate, a cavity of a semiconductor chip having the through-hole can be mounted.

The inorganic insulator is preferably a burned material selected from aluminum oxide, mullite, cordierite and aluminum nitride. At the time of firing, a neck is generated between the powders, and the powders are connected to each other to form a porous fired product. In addition, the above-mentioned inorganic insulator is formed of glass having a softening point of 1000 ° C. or lower, aluminum oxide, mullite, cordierite,
A mixed fired product with any one or more of silicon oxide, aluminum nitride, silicon carbide, and silicon nitride can be used. At the time of firing, the glass component has a function of connecting the ceramic powder, does not lead to sintering, and can suppress shrinkage.

By slicing the wiring board for manufacturing a substrate perpendicularly to its axis, a substrate having a penetrating via conductor can be obtained. These substrates can be used as various wiring substrates such as substrates for semiconductor chips. That is, specifically, a metal conductor layer and / or a dielectric layer may be formed on the surface and secondary firing may be performed at a firing temperature of 1000 ° C. or less to form a wiring pattern or the like to obtain a semiconductor chip mounting substrate. . Polyimide-based in the voids of these substrates,
Benzocyclobutene-based, bismaleimide-triazine-based,
It is preferable to impregnate an organic insulator made of any one of epoxy type and polyphenylene ether type resins. This makes it possible to improve brittleness and provide a substrate having excellent strength. Polyimide-based and benzocyclobutene-based resins have excellent heat resistance. Further, by impregnating with resin, the coefficient of thermal expansion, the coefficient of thermal conductivity, and the dielectric constant can be controlled.

Further, in the method for manufacturing a wiring body for manufacturing a substrate according to the present invention, a dispersion liquid of an inorganic insulating powder is filled in a container in which a large number of fine metal wires are arranged in parallel with the axis of the container, and after drying, an inorganic Insulator powder with porosity of 20% by volume or more and 50% by volume
It is characterized in that the columnar body is formed by firing so as to fall within the following range. By disposing a rod-shaped body made of ceramic, metal or a composite of ceramic and metal in parallel with the axis of the container in the container together with the thin metal wire, it is possible to manufacture a wiring body for manufacturing a substrate containing a heat radiator. Further, by arranging a cylindrical body made of ceramic or metal in the container in parallel with the axis of the container together with the thin metal wire, a through hole can be formed in the columnar body. It is possible to efficiently manufacture a substrate having a penetrating via conductor by slicing the columnar body obtained by the above method for manufacturing a wiring body for manufacturing a substrate perpendicularly to the axis.

[0010]

Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic sectional view of a columnar body 10 which is a wiring body for manufacturing a substrate. The columnar body 10 will be described together with its manufacturing method. Numeral 12 is a porous and columnar fired inorganic insulator. Reference numeral 14 denotes a thin metal wire made of copper, aluminum, or the like buried in the inorganic insulator 12 in parallel with the axis. By slicing this columnar body 10 perpendicularly to the axis line with an appropriate thickness, a substrate 20 (FIG. 3) having a via conductor 18 penetrating with the thin metal wire 14 is obtained.

Of course, to form a substrate on which the semiconductor chip 15 is mounted, the wiring pattern 17 is formed on the substrate as shown in FIG.
Need to be formed. Alternatively, it is necessary to form a dielectric film (not shown) for the capacitor as needed.
In this case, a conductive paste such as a copper paste and / or a dielectric paste such as barium titanate may be applied (screen printing, etc.) and then secondary firing may be performed. In order to prevent the inorganic insulator 12 from shrinking during the second firing, the conductor paste or the dielectric paste has a thickness of 60.
It is preferable to use a material that can be fired at a relatively low temperature of about 0 ° C. in a short time. The wiring pattern 17 is formed on the substrate 20,
The semiconductor chip 15 is mounted and bumps 1 such as solder balls are provided.
9 can be formed to form a BGA type semiconductor device 21.

The wiring pattern 17 is formed on the substrate 20 as described above.
It is preferable that the voids of the inorganic insulator 12 are impregnated with any of polyimide-based, benzocyclobutene-based, bismaleimidetriazine-based, epoxy-based, and polyphenylene ether-based resins after the formation of the above. Wiring pattern 17
Since these are secondarily fired to impregnate these resins, the resin can be impregnated without worrying about the temperature of the second firing. The substrate 20 obtained by slicing the columnar body 10 is relatively fragile because it has many voids, but by impregnating the above resin, the strength can be improved and brittleness can be eliminated. Further, by impregnating with a resin, the thermal expansion coefficient, thermal conductivity, and dielectric constant of the substrate 20 can be controlled by adjusting the ratio of the inorganic insulator 12 and the resin, that is, the porosity of the columnar body 10. . Note that polyimide-based and benzocyclobutene-based resins have excellent heat resistance and are suitable for subsequent processing. Inorganic insulator 12
In order to impregnate the inside of the resin, in order to improve the adhesion with the inorganic insulator 12, first, a coupling agent such as a silane coupling agent is impregnated under reduced pressure, and then the resin is replaced with the above varnish-shaped resin, Can be cured.

The inorganic insulator 12 is preferably fired using a high temperature fired ceramic powder selected from aluminum oxide, mullite, cordierite and aluminum nitride. The state of the columnar body 10 after firing using these high-temperature fired ceramic powders is in a porous state as shown in the cross-sectional view of FIG. 2, and the void portion is a continuous phase (partly closed) on the surface. It may be a void). That is, firing is performed so that the high-temperature fired ceramic powder is not densified. The porosity of the columnar body 12 is preferably 20% by volume or more and 50% by volume or less. 50% porosity
If it is above, it is not easy to set the conditions during firing, the porosity varies, and the reproducibility deteriorates. 40% porosity
In the front and back, there is almost no shrinkage during firing, and the dimensional accuracy is good. When the porosity is less than 20%, densification progresses to some extent and shrinkage occurs, which may cause a problem in dimensional accuracy. In addition, some pores (voids) in the inorganic insulator are not continuous pores, and the resin is not partially impregnated.

Generally, the density of the ceramic fired body depends on the firing temperature, firing time, particle size distribution of the powder, etc., but the degree to which the ceramic particles vitrify the surface and adjoin each other forms a neck and sticks to each other ( The firing conditions (see FIG. 2) that do not cause densification are selected. It is said that the principle of densification is that, first, adjacent grains form a neck, and the grains continue to grow to form giant grains due to surface energy that attempts to reduce the surface area by continuing firing. In the present embodiment, baking is stopped before the surface energy for the grain growth is generated. Therefore, the sintering temperature is set lower than usual temperature conditions for densification, the sintering time is generally shortened, and the particle diameter is rather increased. The particle size distribution does not need to be particularly concerned. Accordingly, the firing conditions may be relatively rough, and the production becomes easy.

Further, in the present embodiment, since the firing is performed while the porosity is large as described above, the shrinkage rate during firing can be suppressed to be extremely low. The shrinkage ratio can be preferably set to 1% or less, and easily set to 5% or less. Therefore, the substrate 20 when cut out as the substrate 20
It is possible to obtain the substrate 20 having good dimensional accuracy, specifically, the positional accuracy of the via conductor 18. Further, the hardness is not so high as compared with the case of being densified, so that the slicing by the cutter is easy and the production efficiency is improved.

In this embodiment, an unfired body is formed by using a slurry-like or paste-like dispersion of ceramic powder. Therefore, it is possible to prepare a slurry-like or paste-like dispersion of ceramic powder (inorganic insulator powder) that does not use an organic binder or uses only a small amount, and as shown in FIG. The unfired body can be obtained by injecting the thin metal wires 14 into the container 6 stretched in parallel via the wire guide plates 2 and 4 and drying the wires. Since no organic binder is used, no binder is required during firing. Therefore, firing of a thick material (columnar body) having a sufficient thickness became possible in a short time. For example, a cylinder having a diameter of 10 cm and a height of about 20 cm can be fired in about 4 hours. This has greatly improved productivity. In contrast, when an organic binder is used, it is necessary to remove the binder at the time of firing. For example, when a green sheet is used, the binder can not be sufficiently removed if it is a thick sheet.
Only a thin material of about m can be fired.

For the thin metal wire 14, copper, gold, aluminum or the like can be used. These thin metal wires 14 may or may not be melted when the inorganic insulator 12 is fired. That is, since the inorganic insulator 12 is fired under the condition that it hardly shrinks (does not become densified) during firing, even if the thin metal wire 14 does not melt, there is no risk of disconnection due to shrinkage of the inorganic insulator 14. When the thin metal wires 14 are melted and liquefied, it is conceivable that the conductor metal itself disappears due to evaporation, seepage, or diffusion of the liquefied metal or a short circuit occurs between the thin metal wires 14. It has been confirmed that evaporation can be dealt with by coating the end of the green body with a ceramic paste or slurry, and that almost no liquefied metal seeps or diffuses into the ceramic.

It is advantageous in terms of cost if the firing atmosphere is performed in the atmosphere. The present inventors have confirmed that, when the fine metal wire 14 is copper, the copper must be oxidized in the air, and therefore must be in a non-oxidizing atmosphere.
Similarly, when the fine metal wires 14 were aluminum, oxidation of aluminum was expected. However, when the fine metal wires 14 were aluminum, no oxidation of aluminum was found, contrary to expectation. The formation of an oxide film on the surface side of the aluminum fine metal wire 14 was recognized, but it is considered that this oxide film serves as a kind of barrier to stop oxygen from entering the center. As a result, the fine metal wire 14
When aluminum was used, firing could be performed at low cost in the atmosphere, and electrical conduction was not hindered.

FIG. 6 shows another embodiment of the columnar body 10. The present embodiment has the same structure as described above, except that the columnar body 10 has, in addition to the fine metal wires 14, a heat radiation property made of a ceramic such as aluminum nitride, a metal such as copper, or a composite of a ceramic and a metal. The excellent rod 22 is the column 10
Buried parallel to the axis of Such a pillar 10
Needless to say, a rod-shaped body may be arranged together with the thin metal wire 14 in the container 6 shown in FIG. FIG. 7 shows an embodiment in which the columnar body 10 is sliced to a suitable thickness by a cutter and formed on a substrate 20. A semiconductor chip can be mounted on the radiator 22a formed by slicing the rod-shaped body 22. This provides the substrate 20 having excellent heat dissipation. Also in this case, as shown in FIG. 8, the conductor paste is secondarily fired on the substrate 20 to form the wiring pattern 17, and the semiconductor chip 15 is mounted on the radiator 22a, as shown in FIG. Chip 1
The semiconductor device 21 can be formed by connecting the wiring pattern 5 and the wiring pattern 17 with a wire, sealing with the sealing resin 23, and forming the bumps 19. It should be noted that the same applies to the above-described embodiment, but it is needless to say that the present invention can be provided not only in the case of mounting one semiconductor chip on the substrate 20, but also as a substrate for an MCM capable of mounting a plurality of semiconductor chips.

FIG. 9 shows still another embodiment. The present embodiment has the same structure as described above, except that a cylindrical body 24 made of ceramic, metal, or the like and having an appropriate cross-sectional shape such as a square or a circle is embedded in the columnar body 10 in addition to the thin metal wires 14. It becomes. When such a columnar body 10 is obtained, the cylindrical body 24 may be provided together with the thin metal wires 14 in the container 6 and fired. FIG. 10 shows an embodiment in which the columnar body 10 is sliced to a suitable thickness with a cutter or the like and formed on a substrate 20. Thereby, the substrate 20 having the through holes 24a can be obtained. The cylindrical body 24 may be left as it is, or may be extracted at an appropriate stage during the manufacturing process. When extracting during the manufacturing process, a through-hole may be formed using a rod. The through hole 24a can be used as a cavity for a mounted semiconductor chip.
That is, the heat dissipation plate 25 is formed by covering the through hole 24a on the substrate 20.
a is attached and the semiconductor chip is mounted on the heat dissipation plate located inside the through hole 24a. Also in this case, as shown in FIG. 11, the conductor paste is secondarily fired on the substrate 20 to form the wiring pattern 17, and the semiconductor chip 15 is mounted on the heat sink 25a, as shown in FIG. It is possible to form the semiconductor device 21 by connecting the chip 15 and the wiring pattern 17 with a wire, sealing with the sealing resin 23, and forming the bump 19.

In each of the above-mentioned embodiments, an example in which a ceramic for high temperature firing is used as the inorganic insulator has been shown, but as the inorganic insulator, these aluminum oxides, mullites, cordierites, silicon oxides, aluminum nitrides, silicon carbides are used. ,
It may be a mixed fired product of at least one kind of high temperature firing ceramics of silicon nitride and glass having a softening point of 1000 ° C. or lower. In the case of this mixed fired product, the glass component is melted at a low temperature and the ceramic particles are adhered to each other by wetting the ceramic powder, so that firing at a lower temperature becomes possible. FIG. 12 is an enlarged cross-sectional explanatory view of the columnar body or the substrate of this embodiment. Ceramic particles (inorganic insulator) 12 are connected by molten glass component 13,
It can be seen that voids are generated between the particles. Further, by slicing this, a substrate can be obtained as described above. In this embodiment, the shrinkage rate can be further reduced, and a columnar body or substrate with high dimensional accuracy can be efficiently manufactured. The glass component 13 may be basically any composition as long as it can be sufficiently fluidized at the firing temperature, but it is preferably borosilicate glass or
It is preferable that the main component is crystallized glass such as CaO-BaO-SiO ₂ or amorphous glass.

[0022]

【Example】

Example 1 50 parts by weight of ethanol and 0.1 part by weight of a surfactant were added to 100 parts by weight of a composition of 50% by weight of aluminum oxide powder and 50% by weight of a CaO-BaO-SiO ₂ glass having a softening point of about 850 ° C. In addition, the mixture was mixed in a ball mill for 20 hours to obtain a dispersion. This is inserted into the inside through the upper and lower wire guide plates.
It was filled in a stainless steel cylindrical container covered with a 3 mm copper wire and dried. Then 1 at the maximum temperature of 960 ° C in a stream of dry nitrogen
Time firing was performed. The obtained fired body has a porosity of about 34.
The shrinkage percentage was about 0.6%. This fired body was cut out to a substrate having a thickness of about 1 mm with a diamond saw, washed, dried, screen-printed with a commercially available copper paste on both sides of the substrate, and fired in a dry nitrogen flow at a maximum temperature of 910 ° C. for 10 minutes. Next, a commercially available glass paste for overcoat was applied and baked at a maximum temperature of 650 ° C. for 10 minutes in a nitrogen flow. The conductivity of the wiring portion of the obtained double-sided wiring board was 100%. Instead of aluminum oxide powder,
Similar results were obtained when mullite, cordierite, silicon oxide, aluminum nitride, silicon carbide, and silicon nitride powders were used alone or in combination. CaO
Similar results were obtained when a borosilicate glass having a softening point of about 640 ° C. was used instead of the —BaO—SiO ₂ glass.

Example 2 90 parts by weight of aluminum oxide powder and 100 parts by weight of a composition containing the balance of a sintering aid composed of silicon dioxide, calcium carbonate and magnesium oxide were added to 50 parts by weight of ethanol and 0.1 parts by weight of ethanol. A surfactant was added, and the mixture was pulverized and mixed in a ball mill for 48 hours to obtain a dispersion liquid. This was filled into a cylindrical container having a 0.3 mm diameter copper wire stretched through the upper and lower wire guide plates and dried. Then, baking was performed for 30 minutes at a maximum temperature of 1200 ° C. in a stream of dry nitrogen. The obtained fired body has a porosity of about 33% and a firing shrinkage rate of about 1.5%.
Met. This fired body was cut in the same manner as in Example 1, copper wiring was formed on both surfaces, and it was confirmed that the electrical conductivity of each wiring between both surfaces via the substrate was 100%. Almost the same results were obtained when mullite, cordierite, or aluminum nitride powder was used instead of the aluminum oxide powder.

Example 3 To 100 parts by weight of a composition of 50% by weight of aluminum nitride powder and 50% by weight of borosilicate glass having a softening point of about 830 ° C., 80 parts by weight of ethanol and 0.1 part by weight of a surfactant were added. A ball mill was mixed for 20 hours to obtain a dispersion. This was filled with a copper wire having a diameter of about 0.3 mm inside, and further filled in a graphite cylindrical container having an aluminum nitride ceramic rod having a diameter of about 14 mm penetrating through, and dried. Next, firing was performed at a maximum temperature of 850 ° C. for 1 hour in dry nitrogen. The obtained fired body was cut out to a substrate having a thickness of about 0.7 mm with a multi-blade saw, washed and dried, and a commercially available copper paste for low temperature firing was screen-printed on both sides of the substrate,
Firing was performed in dry nitrogen at a maximum temperature of 650 ° C. for 10 minutes. Next, a glass paste for overcoating was printed on one side, and baking was performed at a maximum temperature of 650 ° C. for 10 minutes in a nitrogen flow. After bonding a test semiconductor element to this substrate via a high-temperature solder bump, the potting epoxy resin was used for sealing and impregnation of the substrate to obtain a land grid-shaped package. Even when a polyimide-based, benzocyclobutene-based, bismaleimidetriazine-based, or polyphenylene ether-based resin was impregnated in place of the epoxy resin, a good package shape was obtained.

[0025]

According to the first aspect of the present invention, since the inorganic insulator is fired to be porous, the hardness is not so high, the workability is easy, and the substrate can be easily sliced to obtain the substrate. Also, the shrinkage is extremely low, and the dimensional accuracy of the via conductor is good. In addition, since the inorganic insulator has a skeleton structure forming a continuous phase, it is excellent in strength. As in claim 2, the inorganic insulator has a porosity of 20% or more and 50% or less, whereby the firing conditions during firing are easy to set, there is almost no shrinkage during firing, and the dimensional accuracy is good, Further, the resin can be well impregnated when it is sliced into a substrate. According to the third aspect, when a rod-shaped body made of ceramic, metal or a composite of ceramic and metal is embedded in the columnar body parallel to the axis of the columnar body, the sliced body is formed into a substrate,
It can be used as a heat radiator of a semiconductor chip on which the ceramic, metal or a composite portion thereof is mounted.

According to a fourth aspect of the present invention, a through hole is provided in the columnar body in parallel with the axis of the columnar body so that when the sliced body is formed on the substrate, the through hole portion is used as a cavity of a semiconductor chip to be mounted. You can As set forth in claim 5, when the inorganic insulating material is any one of aluminum oxide, mullite, cordierite, and aluminum nitride, a neck is generated between the powders during the firing, and Are connected to form a porous fired product. Further, as in claim 6, the inorganic insulator is any one of glass having a softening point of 1000 ° C. or lower, and aluminum oxide, mullite, cordierite, silicon oxide, aluminum nitride, silicon carbide, or silicon nitride. By making a mixed fired product with the above, the glass component has an effect of connecting the ceramic powders during firing, which does not result in sintering and can suppress shrinkage.

As described in claim 7, by slicing the wiring board for manufacturing a substrate perpendicularly to its axis, a substrate having a penetrating via conductor can be obtained. These substrates can be used as various wiring substrates such as substrates for semiconductor chips. That is, specifically, as in claim 8, the surface is coated with a metal conductor and / or a dielectric,
Secondary baking can be performed at a baking temperature of 1000 ° C. or less to form a wiring pattern or the like to form a substrate for mounting a semiconductor chip. As described in claim 9, it is preferable that the voids of these substrates are impregnated with an organic insulator made of any one of polyimide, benzocyclobutene, bismaleimidetriazine, epoxy and polyphenylene ether resins. This makes it possible to improve brittleness and provide a substrate having excellent strength.

By impregnating with a resin, the coefficient of thermal expansion, the coefficient of thermal conductivity, and the dielectric constant can be controlled. Claim 1
In the method of manufacturing a wiring body for manufacturing a substrate according to the present invention shown in 0, it is not necessary to densify the ceramic, the firing conditions can be set relatively rough, and the firing can be performed in a short time. It can be manufactured. Claim 1
1. As shown in FIG. 1, by arranging a rod-shaped body made of ceramic, metal, or a composite material thereof in a container in parallel with a metal thin wire in parallel with the axis of the container, a wiring body for manufacturing a substrate containing a heat radiator can be easily manufactured. You can Claim 1
In No. 2, a through hole can be formed in the columnar body by arranging a cylindrical body made of ceramic or metal and having a circular or quadrangular cross section in parallel with the axis of the container in the container along with the metal thin wire. In the thirteenth aspect, the columnar body obtained by the method for manufacturing a wiring body for manufacturing a substrate is sliced perpendicularly to the axis to efficiently manufacture a substrate having a through via conductor.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a first embodiment of a columnar body.

FIG. 2 is an enlarged cross-sectional explanatory view of the columnar body of FIG.

FIG. 3 is an explanatory sectional view of a substrate obtained by slicing the columnar body of FIG.

FIG. 4 is an explanatory diagram showing a state in which a semiconductor chip is mounted on a substrate.

FIG. 5 is an explanatory sectional view of a manufacturing apparatus.

FIG. 6 is a schematic sectional view showing a second embodiment of a columnar body.

FIG. 7 is an explanatory sectional view of a substrate obtained by slicing the columnar body of FIG. 6;

FIG. 8 is an explanatory diagram showing a state in which a semiconductor chip is mounted on a substrate.

FIG. 9 is a schematic sectional view showing a third embodiment of a columnar body.

FIG. 10 is an explanatory sectional view of a substrate obtained by slicing the columnar body of FIG. 9;

FIG. 11 is an explanatory diagram showing a state in which a semiconductor chip is mounted on a substrate.

FIG. 12 is an enlarged cross-sectional explanatory view of a columnar body when a glass component is added.

[Explanation of symbols]

 2, 4 Wire guide plate 6 Container 10 Columnar body 12 Inorganic insulator 13 Glass component 14 Metal fine wire 15 Semiconductor chip 16 Organic insulator 17 Wiring pattern 18 Via conductor 19 Bump 20 Substrate 21 Semiconductor device 22 Rod-like body 22a Heat sink 23 Sealing Resin 24 Cylindrical body 24a Through hole

Claims (13)

[Claims] 1. A wiring body for manufacturing a substrate, wherein a plurality of fine metal wires are embedded in a columnar body made of a porous fired inorganic insulator in parallel with an axis of the columnar body. 2. The wiring body for manufacturing a substrate according to claim 1, wherein the porosity of the inorganic insulator fired to be porous is 20% by volume or more and 50% by volume or less. 3. A rod-shaped body made of ceramic, metal or a composite of ceramic and metal is embedded in the columnar body in parallel with the axis of the columnar body.
Alternatively, the wiring body for manufacturing a substrate according to the item 2. 4. The wiring body for manufacturing a substrate according to claim 1, wherein a through hole is provided in the columnar body in parallel with an axis of the columnar body. 5. The method according to claim 1, wherein the inorganic insulator is aluminum oxide,
A fired product of any of mullite, cordierite, and aluminum nitride.
The wiring body for manufacturing a substrate according to 2, 3, or 4. 6. The inorganic insulating material comprises a glass having a softening point of 1000 ° C. or lower and one or more of aluminum oxide, mullite, cordierite, silicon oxide, aluminum nitride, silicon carbide and silicon nitride. The wiring body for manufacturing a substrate according to claim 1, which is a mixed fired product. 7. A substrate, which is obtained by slicing the wiring body for manufacturing a substrate according to claim 1, 2, 3, 4, 5 or 6 perpendicularly to its axis, and has a penetrating via conductor. 8. The substrate according to claim 7, wherein a metal conductor layer and / or a dielectric layer is formed on the surface of the substrate and secondarily fired at a firing temperature of 1000 ° C. or less. 9. The substrate is impregnated with an organic insulator made of a resin selected from polyimide, benzocyclobutene, bismaleimidetriazine, epoxy, and polyphenylene ether resins. The substrate according to claim 7 or 8. 10. A container in which a number of thin metal wires are arranged in parallel with the axis of the container is filled with a dispersion liquid of an inorganic insulating powder,
After the drying, the method for producing a wiring body for manufacturing a substrate, characterized by firing the inorganic insulating powder so as to have a porosity of 20% by volume or more and 50% by volume or less to form a columnar body. 11. The substrate manufacturing apparatus according to claim 10, wherein a rod-shaped body made of ceramic, metal or a composite of ceramic and metal is arranged in the container together with the metal fine wire in parallel with the axis of the container. Wiring body manufacturing method. 12. The method for manufacturing a wiring body for manufacturing a substrate according to claim 10, wherein a cylindrical body made of ceramic or metal is arranged in the container together with the thin metal wire in parallel with the axis of the container. 13. A substrate having a penetrating via conductor is obtained by slicing a columnar body obtained by the method for manufacturing a wiring body for manufacturing a substrate according to claim 10, 11 or 12 perpendicularly to an axis line. Substrate manufacturing method.