JPH09329808A - Liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal display device in which reflection of light from a non-modulating region is decreased and the quality of display images is improved without adding complicated production processes for absorption of light. SOLUTION: A thin film transistor 11 is produced by forming a gate electrode 2, a gate insulating film 4, a semiconductor layer 5, a protective film 6 for the semiconductor, a semiconductor layer 7 having low resistance, a source electrode 8, drain electrode 9 and a protective film 10 on a glass substrate 1. Further, a transparent insulating resin film 12 and a transparent pixel electrode 14 are formed while a transparent insulating resin film 12 comprising a colored acrylic resin is formed as a light-absorbing part 12a in an area above the thin film transistor 11 where no transparent pixel electrode 14 is applied. The colored acrylic resin has average >30 % absorption for 50nm wavelength region in the visible ray region from 400 to 800nm wavelengths. Thus, an active matrix array substrate 15 is obtd. Thereby, reflection of light in the light absorbing part 12a which corresponds to the nonmodulating part can be decreased, which increases the contrast ratio and improves the display image quality.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device that prevents deterioration of display image quality due to reflected light.

[0002]

2. Description of the Related Art Currently, an active matrix drive liquid crystal display is used for a display of a laptop computer or various portable devices because of its high image quality, thinness, light weight and low power consumption. Thin film transistors (TFTs) are mainly used for liquid crystal displays.

As a conventional active matrix type liquid crystal display device which achieves high brightness and low power consumption, for example, the configurations shown in FIGS. 8 to 10 are known.

As shown in FIG. 8, aluminum (Al) is formed on one main surface of a glass substrate 1 as a first insulating substrate.
Molybdenum-Tungsten (Mo-W), Tantalum (T
The gate electrode 2 made of a) or titanium (Ti) and the gate wiring 3 shown in FIG. 10 are formed. A gate insulating film 4 made of amorphous silicon oxide, amorphous silicon nitride, amorphous silicon oxynitride, or the like is formed so as to cover the gate electrode 2 and the gate wiring 3. A connection terminal (not shown) is formed on the gate wiring 3 for connection with an external circuit.

Further, a semiconductor layer 5 of amorphous silicon is formed on the gate insulating film 4 near the gate electrode 2, and a semiconductor protective film 6 of amorphous silicon nitride is formed on the semiconductor layer 5 above the gate electrode 2. Is formed.
Then, at a position on the semiconductor layer 5 where the semiconductor protective film 6 is sandwiched, a large amount of phosphorus (P) atoms or the like is doped n ^+.
A low resistance semiconductor layer 7 such as a type of amorphous silicon (n ⁺ -a-Si) is formed. Further, on the low resistance semiconductor layer 7, a source electrode 8 and a drain electrode 9 made of aluminum, molybdenum, titanium, etc., and signal lines integrated with the drain electrode 9 are partially covered with the low resistance semiconductor layer 7 so as to cover a part thereof. It is formed so as to cover 7. Also,
A protective film 10 such as amorphous silicon oxide, amorphous silicon nitride, or amorphous silicon oxynitride is formed on the source electrode 8, the drain electrode 9, and the signal wiring to form a thin film transistor 11 as a switching element.

Further, a transparent insulating resin film 12 of acrylic resin is formed on one main surface of the glass substrate 1, and a contact hole 13 is formed in the transparent insulating resin film 12 on the source electrode 8.
Is formed, and a contact hole is also formed in a connection terminal with an external circuit (not shown).

Further, a transparent pixel electrode 14 of ΙTO (Indium Tin Oxide) is formed on the transparent insulating resin film 12 and the contact hole 13, and the transparent pixel electrode 14 is electrically connected to the source electrode 8 through the contact hole 13. Connected,
An active matrix array substrate 15 is formed.

On the other hand, red, green and blue color filters 22 are formed on one main surface of a glass substrate 21 as a second insulating substrate, and the color filters 22 are planarized to cover the color filters 22. The protective film 23 is formed, the counter transparent electrode 24 of ITO is formed on the flattening protective film 23, and the counter substrate 25 is formed.

Then, the active matrix array substrate
Polyimide films 31 and 32 are formed on the opposing surfaces of 15 and the counter substrate 25, respectively, and polarizing plates 33 and 34 are adhered to the opposite surfaces of the polyimide films 31 and 32, respectively.

Further, an active matrix array substrate
The periphery of 15 and the counter substrate 25 are adhered to each other, and the liquid crystal 35 is sandwiched and sealed between the active matrix array substrate 15 and the counter substrate 25. A backlight 36 is installed on the back surface of the active matrix array substrate 15 via a polarizing plate 33 to form a liquid crystal display device 37.

That is, in the above-mentioned active matrix array substrate 15, as shown in FIGS. 9 and 10, the signal wiring of the transparent pixel electrode 14 and the drain electrode 9 and the transparent pixel electrode 14 and the gate wiring 3 are on the same plane. The signal wiring of the transparent pixel electrode 14 and the drain electrode 9 which is not formed inside and the transparent insulating resin film 12 is sandwiched, and the transparent pixel electrode
14 and the gate wiring 3 can be partially overlapped with each other.

In such an active matrix array substrate 15, the transparent pixel electrode 14 and the signal wiring and the transparent pixel electrode 14 and the gate wiring 3 can partially overlap each other with the transparent insulating resin film 12 interposed therebetween. For,
The area of the transparent pixel electrode 14 can be made larger than that of the active matrix array substrate 15 having a structure in which the transparent pixel electrode 14 and the signal wiring are formed in the same plane. Therefore,
As shown in FIG. 8, in the transmissive liquid crystal display device equipped with the backlight 36, the aperture ratio can be increased, so that a display screen with high brightness can be obtained and the display brightness can be kept constant. If so, the brightness of the backlight 36 can be reduced, so that the power consumption can be reduced.

[0013]

However, in the above-mentioned active matrix liquid crystal display device, the thin film transistor 11, the gate wiring 3 and the signal wiring of the drain electrode 9 in which the light incident from the outside is formed on the active matrix array substrate 15, etc. In the non-modulated area of the transmitted light, it is reflected on the display screen. The reflected light in the non-modulated region is more remarkable in a metal material in which the gate wiring 3 and the signal wiring of the drain electrode 9 have a high reflectance with respect to visible light such as aluminum. There is a problem that the display image quality of the display device 37, particularly the contrast ratio, deteriorates.

As a method of preventing the reduction of the contrast ratio, there is a method of forming a black matrix on the counter substrate 25.

However, the formation of the black matrix on the counter substrate 25 in this manner causes an increase in manufacturing steps, a decrease in throughput, and a decrease in yield due to complication of the manufacturing steps, which causes an increase in cost.

The present invention has been made in view of the above problems, and provides a liquid crystal display device in which the reflected light from the non-modulation area is reduced and the display image quality is improved without adding a complicated manufacturing process. The purpose is to

[0017]

According to the present invention, there is provided a first insulating substrate, a switching element formed on the first insulating substrate, and the first insulating substrate including the switching element. An array substrate having a transparent insulating resin film formed thereon, a transparent pixel electrode electrically connected to the switching element and formed on a portion of the transparent insulating resin film, and a second insulating substrate, A counter electrode formed on a second insulating substrate; and a counter substrate provided to face the array substrate, and a liquid crystal disposed between the array substrate and the counter substrate. The transparent insulating resin film has a wavelength of 40 nm at a portion not covered by the transparent pixel electrode.
At least 5 in the visible light region from 0 nm to 800 nm
It has a light absorbing portion that absorbs 30% or more on average in the wavelength region of 0 nm, and lowers the reflection of visible light in the portion not covered by the transparent pixel electrode, thereby increasing the contrast ratio without adding a complicated manufacturing process. Enlarge it to improve the display quality.

The present invention also provides a first insulating substrate, a switching element formed on the first insulating substrate, and a transparent film formed on the first insulating substrate including the switching element. An array substrate having an insulating resin film, a transparent pixel electrode electrically connected to the switching element and formed on a part of the transparent insulating resin film, a second insulating substrate, and a second insulating substrate. A red, green and blue color filter formed on a transparent substrate, a counter substrate having a transparent electrode formed on these color filters, and a liquid crystal disposed between the array substrate and the counter substrate. The transparent insulating resin film has a wavelength of 400 nm to 800 nm in a portion not covered by the transparent pixel electrode.
Of the visible light region having a light absorption portion that absorbs at least 30% on average over a wavelength region of 50 nm, and having a wavelength peak of transmitted light that overlaps or is close to the visible light region absorbed by the light absorption portion. By overlapping the color filter and reducing the reflection of visible light in the area not covered by the transparent pixel electrode, the contrast ratio can be increased without adding a complicated manufacturing process.
Improves display quality.

The switching element is a thin film transistor using a semiconductor of any one of single crystal silicon, polycrystalline silicon and amorphous silicon as a channel layer.

Further, an electric wiring for connecting to an external circuit is provided on the insulating substrate, and the transparent pixel electrode is overlapped with at least a part of the electric wiring.

Furthermore, the transparent insulating resin film is made of at least one of acrylic resin, polyimide resin and benzocyclobutene resin and can be easily colored by chemical treatment or heat treatment. Absorbs visible light and reduces reflected light.

The transparent insulating resin film has photosensitivity,
The light absorbing portion is patterned by a photolithography process and can be easily colored with light, and this coloring absorbs visible light and reduces reflected light.

Further, the transparent insulating resin film is an acrylic resin, and the light absorbing portion is formed by treating the transparent insulating resin film with a chemical solution containing an amine solvent. It can be colored, and this coloring absorbs visible light and reduces reflected light.

The transparent insulating resin film is a benzocyclobutene-based resin, and the light absorbing portion is formed by heat treatment at 150 ° C. or higher in an atmosphere having an oxygen concentration of 100 ppm or higher, and is easily colored by chemical treatment. This coloring can absorb visible light and reduce reflected light.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the liquid crystal display device of the present invention will be described below with reference to the drawings. The parts corresponding to the conventional example shown in FIGS. 8 to 10 will be described with the same reference numerals.

As shown in FIG. 1, aluminum (Al) is formed on one main surface of a glass substrate 1 as a first insulating substrate.
Molybdenum-Tungsten (Mo-W), Tantalum (T
a) or a gate electrode 2 made of titanium (Ti) or the like and a gate wiring (not shown) integrally formed with the gate electrode 2 are formed, and amorphous silicon oxide or amorphous silicon nitride is formed so as to cover the gate electrode 2 and the gate wiring. Alternatively, the gate insulating film 4 such as amorphous silicon oxynitride is formed. A connection terminal is formed on the gate wiring for connection with an external circuit.

Further, a semiconductor layer 5 of amorphous silicon is formed on the gate insulating film 4 near the gate electrode 2, and a semiconductor protective film 6 of amorphous silicon nitride is formed on the semiconductor layer 5 above the gate electrode 2. Is formed.
Then, at a position on the semiconductor layer 5 where the semiconductor protective film 6 is sandwiched, a large amount of n ⁺ is doped with phosphorus (P) atoms or the like.
A low resistance semiconductor layer 7 such as a type of amorphous silicon (n ⁺ -a-Si) is formed. Further, on the low resistance semiconductor layer 7, a source electrode 8 made of aluminum, molybdenum, titanium or the like, a drain electrode 9 and a signal wiring integrated with the drain electrode 9 are partially covered on the low resistance semiconductor layer 7. It is formed so as to cover 7. A protective film 10 made of amorphous silicon oxide, amorphous silicon nitride, amorphous silicon oxynitride, or the like is formed on the source electrode 8, the drain electrode 9, and the signal wiring to form a thin film transistor 11 as a switching element.

Further, a transparent insulating resin film 12 of acrylic resin is formed on one main surface of the glass substrate 1, and a contact hole 13 is formed in the transparent insulating resin film 12 on the source electrode 8.
Is formed, and a contact hole is also formed in a connection terminal with an external circuit (not shown).

An ITO (Indium Tin Oxide) transparent pixel electrode 14 is formed on the transparent insulating resin film 12 and the contact hole 13, and the transparent pixel electrode 14 is electrically connected to the source electrode 8 through the contact hole 13. Connected to each other.

Further, in the region above the thin film transistor 11 which is not covered by the transparent pixel electrode 14, an acrylic resin colored so as to absorb an average of 30% or more over a wavelength region of at least 50 nm in the visible light region of wavelengths of 400 nm to 800 nm. The light absorbing portion 12a of the transparent insulating resin film is formed in the non-modulated area as shown by the diagonal lines in FIG.
An active matrix array substrate 15 is formed.

On the other hand, red, green and blue color filters 22 are formed on one main surface of a glass substrate 21 as a second insulating substrate, and the color filters 22 are planarized to cover the color filters 22. The protective film 23 is formed, the counter transparent electrode 24 of ITO is formed on the flattening protective film 23, and the counter substrate 25 is formed.

And an active matrix array substrate
Polyimide films 31 and 32 are formed on the opposing surfaces of 15 and the counter substrate 25, respectively, and polarizing plates 33 and 34 are adhered to the opposite surfaces of the polyimide films 31 and 32, respectively.

Further, active matrix array substrate
The periphery of 15 and the counter substrate 25 are adhered to each other, and the liquid crystal 35 is sandwiched and sealed between the active matrix array substrate 15 and the counter substrate 25. A backlight 36 is installed on the back surface of the active matrix array substrate 15 via a polarizing plate 33 to form a liquid crystal display device 37.

The manufacturing process of the embodiment shown in FIGS. 1 and 2 will be described below with reference to the drawings.

First, as shown in FIG. 3, a thickness of 100 to 3 is formed on one main surface of the glass substrate 1 by a sputtering method or the like.
A conductive film such as aluminum (Al), molybdenum-tungsten (Mo-W), tantalum (Ta), or titanium (Ti) having a thickness of 00 nm is formed, and the gate electrode 2 and a gate wiring (not shown) are formed by a photolithography process.

Next, a thickness of 100 is obtained by the plasma CVD method.
A gate insulating film 4 of amorphous silicon oxide, amorphous silicon nitride, amorphous silicon oxynitride or the like having a thickness of up to 500 nm is formed. The film forming method is not limited to the plasma CVD method, and a sputtering method or the like may be used. Then, the glass substrate 1 having the gate insulating film 4 formed thereon has a thickness of 20 to 300 nm without being exposed to the atmosphere.
Amorphous silicon or other semiconductor layer 5, thickness 100
A semiconductor protective film 6 of amorphous silicon nitride or the like having a thickness of up to 300 nm is sequentially formed. Next, the semiconductor protective layer 6 other than the semiconductor layer 5 which will be the channel of the thin film transistor 11 above the gate electrode is removed by a photolithography process.

Further, a low resistance semiconductor layer 7 such as n ⁺ type amorphous silicon, which is heavily doped with phosphorus atoms and the like, is formed to a thickness of 20 to 70 nm.

Next, the low resistance semiconductor layer 7 to the semiconductor layer 5 in the formation region of the thin film transistor 11 are formed in an island shape by a photolithography process. Further, a connection terminal is also formed in the gate wiring by a photolithography process for connection with an external circuit (not shown).

Further, a conductive film such as aluminum, molybdenum, or titanium having a thickness of 200 to 500 nm is formed by a sputtering method or the like, and a source electrode 8, a drain electrode 9 and a signal wiring integrated with the drain electrode 9 are formed by a photolithography process. To form.

Then, the low-resistance semiconductor layer 7 on the semiconductor protective film 6 is etched and separated using the source electrode 8 and the drain electrode 9 as a mask, and amorphous silicon oxide, amorphous silicon nitride, amorphous silicon oxynitride, etc. are plasma-enhanced by the plasma CVD method. To a thickness of 100 to 500 nm by a photolithography process and at least TFT
A protective film 10 is formed so as to cover the (Thin Film Transistor) formation region, and a thin film transistor 11 is formed. Sputtering may also be used for forming the protective film 10.

Next, as shown in FIG. 4, a transparent insulating resin film 12 of acrylic resin is formed on the entire main surface of the glass substrate 1 to a thickness of about 1 to 5 μm. film
Bake 12 at 150-250 ° C. In addition, a contact hole 13 is formed on the source electrode 8 by a photolithography process.
And forming an opening on a connection terminal to an external circuit (not shown).

Further, as shown in FIG. 5, a transparent conductive film such as ITO having a thickness of about 20 to 200 nm is formed on the transparent insulating resin film 12 and the contact hole 13, and the transparent pixel electrode 14 is formed by a photolithography process. Form. The transparent pixel electrode 14 is electrically connected to the source electrode 8 through the contact hole 13.

Further, as shown in FIG. 6, a transparent pixel electrode
By using 14 as a mask, the transparent insulating resin film 12 in a region not covered by the transparent pixel electrode 14 is changed from a wavelength of 400 nm to 800
The visible light absorption region is colored so as to absorb 30% or more on average over at least a wavelength region of 50 nm, and the light absorbing portion is colored.
12a is formed, and the active matrix array substrate 15 is formed.

Here, the coloring of the light absorbing portion 12a will be described.

When the transparent insulating resin film 12 is an acrylic resin, the glass substrate 1 which has been subjected to the steps described with reference to FIG. 6 is treated with an organic solvent containing an amine solvent such as monoethanolamine or aromatic amine at a temperature of 50 to 130 ° C. When immersed in a solvent for 2 minutes or more, the amine reacts with the acrylic resin and the transparent pixel electrode
The acrylic resin of the light absorbing portion 12a not covered with 14 can be colored. Coloring of the acrylic resin by the reaction with the amine is because an azo group or an azo compound which is generally known as a component of a dye is formed.

When the light absorbing portion 12a of the acrylic resin colored by this method is formed to a thickness of about 4 μm above the signal wiring of the gate electrode 2 and the aluminum film to be the gate wiring, the colored acrylic resin is used. As a result, visible light having a wavelength of 400 to 500 nm is absorbed by about 60% on average, so that the reflected light at the light absorbing portion 12a is reduced by 60% on average. In addition, visible light with a wavelength of 500 to 580 nm has an average of 30.
%, The reflected light is reduced by 30% on average.

Further, if formed as described above, only by immersing the active matrix array substrate 15 in an organic solvent containing an amine solvent, an acrylic resin in a region which is a non-modulated region of transmitted light and which is not covered by the transparent pixel electrode 14 is formed. The transparent insulating resin film 12 of the system can be colored, and the process is not complicated and the yield is not reduced.

Therefore, since the reflected light from the non-modulated region of the transmitted light can be reduced, the active matrix type liquid crystal display device is superior in the display image quality, particularly the contrast ratio, to the conventional active matrix type liquid crystal display device. .

Then, specifically, the contrast ratio can be improved to about 110: 1 if the conventional ratio is 100: 1.

The improvement of the contrast ratio is due to the transparent pixel electrode 14 on the active matrix array substrate 15.
The transparent insulating resin film 12 in the region not covered by the
At least 50 nm in the visible light range of 0 to 800 nm
If it is colored so as to absorb an average of 30% or more over the wavelength region of, it is obtained in proportion to the degree of coloring, so-called darkness.

Next, another embodiment of the liquid crystal display device of the present invention will be described with reference to FIG. It is similar to the active matrix array substrate 15 shown in FIG. 1, but the color filter 22 is different.

That is, the blue color filter 22b, the red color filter 22r, and the green color filter 22g are formed on one main surface of the glass substrate 21 at positions overlapping the transparent pixel electrode 14 so as to function as pixels, respectively. The blue color filter 22b is formed at a position above the light absorbing portion 12a. Further, a flattening protective film 23 is formed to cover these three types of color filters 22r, 22g and 22b.

And active matrix array substrate
The blue color filter 22b, which is located above the colored light absorbing portion 12a in 15 transmits blue light,
12a absorbs about 60% of visible light with a wavelength of 400 to 500 nm on average, and averages about 30% of visible light with a wavelength of 500 to 580 nm.
%, The light absorbing portion 12a absorbs the visible light in the blue region best.

Therefore, if the blue color filter 22b is formed at a position overlapping above the light absorbing portion 12a, the light absorbing portion 12a
Since the visible light incident from the outside is absorbed over the entire wavelength region so that the 12a and the blue color filter 22b complement each other, the reflected light in the non-modulated portion of the transmitted light can be reduced by 80% or more.

When the light absorption peak of the light absorption section 12a is 500 to 600 nm, the green color filter 22g is overlapped, and when the light absorption peak of the light absorption section 12a is 600 nm or more. Similarly, by overlapping the red color filter 22r, the reflected light in the non-modulated portion of the transmitted light can be reduced by 80% or more.

As described above, since the reflected light from the non-modulated area of the transmitted light is greatly reduced, the display image quality, particularly the contrast ratio, is much superior to that of the conventional active matrix type liquid crystal display device. The contrast ratio can be improved to about 130: 1 if the conventional ratio is 100: 1.

The thin film transistor 11 uses a semiconductor of single crystal silicon, polycrystalline silicon or amorphous silicon as a channel layer, and has a stagger type or a coplanar type which is generally classified as a structure. Alternatively, it may be a planar type.

Further, the transparent insulating resin film 12 is not limited to an acrylic resin, but may be a polyimide resin or a benzocyclobutene resin. In the case of a benzocyclobutene resin, a chemical is used as a method for forming a colored region. In addition to the chemical treatment by (1), a method of performing heat treatment at a temperature of 150 ° C. to 250 ° C. for 10 minutes or more in an atmosphere having an oxygen concentration of 100 ppm or more may be used. With this heat treatment method, only the resin film in the region which is the non-modulated region of the transmitted light and which is not covered by the transparent pixel electrode can undergo an oxidation reaction to be colored.

Furthermore, when the transparent insulating resin film has photosensitivity and is patterned by the photolithography process, it is generally colored at the end of the photolithography process because of the photosensitizer contained in the transparent insulating resin. ing. Therefore, a bleaching step is usually required. For example, a photosensitive acrylic resin is bleached by irradiation with light such as ultraviolet rays. In the case of such a photosensitive acrylic resin, if the decoloring step is performed by backside exposure using the thin film transistor 11 which is a switching element and the electric wiring as a mask, the acrylic resin film in the non-modulated area of the transmitted light in the active matrix array substrate 15 is formed. It can be left in a colored state, and this bleaching method makes it easier to color the light-absorbing part than the method of coloring by chemical treatment with chemicals.
12a can be formed.

[0060]

According to the present invention, the transparent insulating resin film absorbs 30% or more of light on average in the wavelength region of at least 50 nm in the visible light region of wavelengths of 400 nm to 800 nm in the portion not covered by the transparent pixel electrode. Therefore, by reducing the reflection of visible light in the portion not covered by the transparent pixel electrode, it is possible to increase the contrast ratio and improve the display image quality without adding a complicated manufacturing process.

Further, the color of the color filter at the corresponding position overlaps with the wavelength peak of the transmitted light which overlaps with or is adjacent to the absorbed visible light region, thereby further increasing the contrast ratio and improving the display image quality. it can.

Furthermore, if the transparent insulating resin film has photosensitivity and the light absorbing portion is patterned by a photolithography process, it can be easily colored with light, and this coloring absorbs visible light and reduces reflected light. it can.

Furthermore, by forming the transparent insulating resin film with an acrylic resin and treating the light absorbing portion with a chemical solution containing an amine solvent, it can be easily colored by a chemical treatment. It can absorb and reduce reflected light.

Further, the transparent insulating resin film is a benzocyclobutene-based resin, and the light absorbing portion is formed by heat treatment at 150 ° C. or higher in an atmosphere having an oxygen concentration of 100 ppm or higher, which can be easily colored by chemical treatment. This coloring can absorb visible light and reduce reflected light.

[Brief description of drawings]

FIG. 1 is a sectional view showing one embodiment of a liquid crystal display device of the present invention.

FIG. 2 is a plan view showing the same active matrix array substrate.

FIG. 3 is a cross-sectional view showing one manufacturing process of the above active matrix array substrate.

FIG. 4 is a cross-sectional view showing the next manufacturing step of FIG. 3 above.

5 is a cross-sectional view showing the next manufacturing step of FIG. 4 above.

6 is a cross-sectional view showing the next manufacturing step of FIG. 5 above.

FIG. 7 is a cross-sectional view showing a liquid crystal display device of another embodiment.

8 is a sectional view showing an AA section of the liquid crystal display device shown in FIG. 10 of a conventional example.

9 is a cross-sectional view showing a BB cross section of the liquid crystal display device shown in FIG.

FIG. 10 is a plan view of the same.

[Explanation of symbols]

 1 Glass substrate which is the first insulating substrate 11 Thin film transistor which is a switching element 12 Transparent insulating resin film 12a Light absorbing portion 14 Transparent pixel electrode 15 Active matrix array substrate 21 Glass substrate which is the second insulating substrate 22 Color filter 25 Counter substrate 35 Liquid crystal 37 Liquid crystal display device

Claims (8)

[Claims] 1. A first insulating substrate, a switching element formed on the first insulating substrate, and a transparent insulating resin film formed on the first insulating substrate including the switching element. An array substrate having a transparent pixel electrode electrically connected to the switching element and formed on a part of the transparent insulating resin film; a second insulating substrate;
A liquid crystal display comprising a counter electrode formed on an insulating substrate of the above, a counter substrate provided to face the array substrate, and a liquid crystal disposed between the array substrate and the counter substrate. In the device, the transparent insulating resin film has an average of 3 parts over a wavelength range of at least 50 nm in a visible light range of 400 nm to 800 nm in a portion not covered with the transparent pixel electrode.
A liquid crystal display device having a light absorbing portion that absorbs 0% or more. 2. A first insulating substrate, a switching element formed on the first insulating substrate, and a transparent insulating resin film formed on the first insulating substrate including the switching element. An array substrate having a transparent pixel electrode electrically connected to the switching element and formed on a part of the transparent insulating resin film; a second insulating substrate;
Is disposed between the array substrate and the counter substrate, and the counter substrate having red, green and blue color filters formed on the insulative substrate, transparent electrodes formed on the color filters. In the liquid crystal display device including the liquid crystal, the transparent insulating resin film has an average thickness of 3 at least in a visible light region of 400 nm to 800 nm over a wavelength region of 50 nm in a portion not covered by the transparent pixel electrode.
A liquid crystal display device having a light absorbing portion that absorbs 0% or more, and overlapping with the color filter having a wavelength peak of transmitted light that overlaps or is close to a visible light region absorbed by the light absorbing portion. . 3. The switching element is single crystal silicon,
The liquid crystal display device according to claim 1 or 2, which is a thin film transistor using a semiconductor of either polycrystalline silicon or amorphous silicon as a channel layer. 4. An electric wiring for connecting to an external circuit is provided on an insulating substrate, and the transparent pixel electrode is overlapped with at least a part of the electric wiring. The liquid crystal display device according to any one of the above. 5. The transparent insulating resin film is an acrylic resin,
2. At least one of a polyimide resin and a benzocyclobutene resin.
5. The liquid crystal display device according to any one of 4 to 4. 6. The liquid crystal display device according to claim 1, wherein the transparent insulating resin film has photosensitivity, and the light absorbing portion is patterned by a photolithography process. 7. The transparent insulating resin film is an acrylic resin, and the light absorbing portion is formed by treating the transparent insulating resin film with a chemical containing an amine solvent. 7. A liquid crystal display device according to any one of 4 to 6 above. 8. The transparent insulating resin film is a benzocyclobutene-based resin, and the light-absorbing portion is formed in an atmosphere having an oxygen concentration of 100 ppm or more.
7. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is formed by heat treatment at 50 [deg.] C. or higher.