JPH09321162A - Package for semiconductor circuit device - Google Patents
Package for semiconductor circuit deviceInfo
- Publication number
- JPH09321162A JPH09321162A JP8133167A JP13316796A JPH09321162A JP H09321162 A JPH09321162 A JP H09321162A JP 8133167 A JP8133167 A JP 8133167A JP 13316796 A JP13316796 A JP 13316796A JP H09321162 A JPH09321162 A JP H09321162A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- package
- gold
- aluminum alloy
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体回路装置用
パッケージに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor circuit device package.
【０００２】[0002]
【従来の技術】航空機に搭載する電子機器は小型軽量で
耐湿性、耐熱性等に優れ、高信頼性であることが要求さ
れる。そのため半導体回路装置用パッケージ、特にハイ
ブリッド半導体およびマルチチップ半導体回路装置用パ
ッケージに対してアルミ合金を使用する場合がある。2. Description of the Related Art Electronic equipment mounted on an aircraft is required to be small and lightweight, have excellent moisture resistance and heat resistance, and have high reliability. Therefore, an aluminum alloy may be used for a semiconductor circuit device package, particularly for a hybrid semiconductor and a multi-chip semiconductor circuit device package.
【０００３】従来のこの種の半導体回路装置用パッケー
ジを概略断面図で図２に示す。FIG. 2 is a schematic sectional view of a conventional package for a semiconductor circuit device of this type.
【０００４】図２を参照して説明すると、容器２１は、
軽量であること、熱伝導性がよいことを考慮してアルミ
合金を使用する。半導体素子２３はアルミ合金と熱膨張
係数の差があり、種々の問題がある。そこで一般には、
半導体素子２３と熱膨張係数が近く、熱伝導性のよいキ
ャリアプレート２２に半導体素子２３をはんだ等の接合
材２４により固定し、このキャリアプレート２２を容器
２１にねじで固定する場合が多い。また、キャリアプレ
ート２２には半導体素子２３に信号を授受する配線パタ
ーンを設けた回路基板２５が同様に固定されており、半
導体素子２３とボンディングワイヤ２７にて接続され
る。容器２１に蓋２６を載せ、Ａｕ−Ｓｎはんだ等を使
用したはんだ接合かレーザ溶接等により接合する。な
お、はんだ接合を行う場合は容器２１にＮｉめっきやＡ
ｕめっき等のはんだ接合に適しためっきが必要である。Referring to FIG. 2, the container 21 is
Aluminum alloy is used because it is lightweight and has good thermal conductivity. The semiconductor element 23 has a difference in thermal expansion coefficient from that of an aluminum alloy, and thus has various problems. So in general,
In many cases, the semiconductor element 23 is fixed to the carrier plate 22 having a thermal expansion coefficient close to that of the semiconductor element 23 and good thermal conductivity with a bonding material 24 such as solder, and the carrier plate 22 is fixed to the container 21 with screws. A circuit board 25 having a wiring pattern for transmitting and receiving signals to and from the semiconductor element 23 is similarly fixed to the carrier plate 22, and is connected to the semiconductor element 23 by a bonding wire 27. The lid 26 is placed on the container 21 and joined by solder joining using Au—Sn solder or the like or laser welding. When soldering is performed, the container 21 is plated with Ni or A
Plating suitable for solder joining such as u plating is required.
【０００５】[0005]
【発明が解決しようとする課題】従来技術では、キャリ
アプレート２２をパッケージ内にねじで固定するため、
キャリアプレート２２、および容器２１にねじ止めスペ
ースが必要である。又、キャリアプレート２２、回路基
板２５、ねじ、と部品点数が多いため、小型軽量化に問
題がある。又、蓋の取り付けにおいて、はんだ付け、特
にＡｕ−Ｓｎはんだ付けは搭載部品に熱の影響を与え、
信頼性に問題がある。レーザによる溶接は、溶接部で素
地金属が露出するため耐蝕性に問題があり、製造コスト
上も問題がある。In the prior art, since the carrier plate 22 is fixed in the package with screws,
A screwing space is required for the carrier plate 22 and the container 21. Further, since the number of parts such as the carrier plate 22, the circuit board 25, and the screws is large, there is a problem in reducing the size and weight. Also, when mounting the lid, soldering, especially Au-Sn soldering, affects the mounted components due to heat,
There is a problem with reliability. Laser welding has a problem in corrosion resistance because the base metal is exposed at the welded portion, and also in manufacturing cost.
【０００６】本発明は上記の欠点を解消するもので、小
型軽量、高信頼性で量産性の高い半導体用パッケージを
提供することを目的とする。The present invention solves the above-mentioned drawbacks, and an object of the present invention is to provide a semiconductor package which is small in size, lightweight, highly reliable and highly producible.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決するため
本発明は、第一の開口部と第二の開口部とを有するアル
ミ合金容器と、前記第一の開口部に接合され、シーム溶
接可能な材料から成るリングと、半導体素子を載せ、こ
の半導体素子に信号を授受する配線パターンを設けたセ
ラミック回路基板と、シーム溶接可能な材料から成る蓋
とを具備し、前記セラミック回路基板は前記第二の開口
部に緩衝材を介して接合され、前記蓋は前記第一の開口
部の前記リングに接合され、前記半導体素子を気密に封
止する気密封止構造を形成することを特徴とする半導体
回路装置用パッケージである。In order to solve the above problems, the present invention provides an aluminum alloy container having a first opening and a second opening, and a seam welded to the first opening. A ring made of a possible material, a ceramic circuit board on which a semiconductor element is mounted and a wiring pattern for transmitting and receiving signals to and from the semiconductor element is provided, and a lid made of a material capable of seam welding. The lid is joined to the second opening via a cushioning material, and the lid is joined to the ring of the first opening to form an airtight sealing structure for hermetically sealing the semiconductor element. It is a package for a semiconductor circuit device.
【０００８】また、アルミ合金容器は、シリコンを含む
アルミ合金から成ることを特徴とする。Further, the aluminum alloy container is characterized by being made of an aluminum alloy containing silicon.
【０００９】また、アルミ合金容器、リング、およびセ
ラミック回路基板の各々の接合部は金めっきが施してあ
り、金系はんだで接合することを特徴とする。The aluminum alloy container, the ring, and the ceramic circuit board are jointed with gold plating, which is characterized in that they are joined with gold solder.
【００１０】また、セラミック回路基板はＡｌＮ、又は
Ａｌ2 Ｏ3 より成ることを特徴とする。The ceramic circuit board is characterized by being made of AlN or Al 2 O 3 .
【００１１】また、緩衝材は銅より成ることを特徴とす
る。The buffer material is made of copper.
【００１２】本発明では、半導体素子に信号を授受する
配線パターンを設けた種々の回路基板は一体化して容器
に設けてあり、半導体素子はその上に固定すればよい。
その結果、キャリアプレート、ねじ、種々の回路基板は
不要となり、部品点数を減らすことができる。さらに、
キャリアプレート、ねじ取り付けスペースは不要となる
ので小型軽量化が達成できる。In the present invention, various circuit boards provided with a wiring pattern for transmitting and receiving signals to and from the semiconductor element are integrally provided in the container, and the semiconductor element may be fixed thereon.
As a result, the carrier plate, screws, and various circuit boards are unnecessary, and the number of parts can be reduced. further,
Since the carrier plate and the screw mounting space are not required, the size and weight can be reduced.
【００１３】容器と回路基板は熱膨張係数のミスマッチ
を解消する緩衝材を介して接合されるので、回路基板は
半導体素子と熱膨張係数のマッチングがとれた材料で必
要ならば熱伝導度の高い材料を使用できる。さらに容器
はＳｉを含むアルミ合金を使用することで回路基板やリ
ングとの熱膨張係数の差を減らすことができる。Since the container and the circuit board are bonded together through a buffer material that eliminates the mismatch of the thermal expansion coefficients, the circuit board is made of a material having a matching thermal expansion coefficient with the semiconductor element and has a high thermal conductivity if necessary. Materials can be used. Further, by using an aluminum alloy containing Si for the container, it is possible to reduce the difference in thermal expansion coefficient between the container and the circuit board or the ring.
【００１４】シーム溶接可能な材料から成るリングを容
器に設けているので、蓋の取り付けはシーム溶接で行う
ことができ、搭載部品に熱の影響を与えにくく、信頼性
が高く量産性も高い。Since the container is provided with the ring made of a seam-weldable material, the lid can be attached by seam welding, and the mounted parts are less likely to be affected by heat, and the reliability and mass productivity are high.
【００１５】また、リング、回路基板はＡｕ系はんだで
同時に容器に接合することができ生産性を損なわない。Further, the ring and the circuit board can be simultaneously joined to the container with Au-based solder without impairing the productivity.
【００１６】以上により小型軽量、信頼性が高く量産性
の高い半導体回路装置用パッケージを実現できる。As described above, it is possible to realize a semiconductor circuit device package which is compact, lightweight, highly reliable, and highly producible.
【００１７】[0017]
【発明の実施の形態】本発明の実施の形態を図１に概略
断面図で示す。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention is shown in a schematic sectional view in FIG.
【００１８】第一の開口部と第二の開口部とを有する、
金めっきを施したアルミ合金容器１１の第二の開口部
に、金めっきした銅の緩衝用リング１２を介して、Ａｌ
Ｎ又はＡｌ2 Ｏ3 から成るセラミック回路基板１３を、
Ａｕ−Ｇｅはんだ１５で接続する。アルミ合金容器１１
は、シリコン２０重量％以上を含むアルミ合金から成る
ものを使用する。セラミック回路基板１３の緩衝用リン
グ１２との接続部には金めっきが施され、半導体素子搭
載面には配線パターンが形成されている。アルミ合金容
器１１の第一の開口部には金めっきを施したステンレス
鋼から成るリング１４をＡｕ−Ｇｅはんだ１５で接続す
る。セラミック回路基板１３とリング１４とをアルミ合
金容器１１に接続するのは同時に行い、セラミック回路
基板１３を底部とした容器を形成する。Having a first opening and a second opening,
Al is inserted into the second opening of the aluminum-plated aluminum alloy container 11 via the gold-plated copper buffer ring 12.
A ceramic circuit board 13 made of N or Al 2 O 3 ,
Connection is made with Au-Ge solder 15. Aluminum alloy container 11
Is an aluminum alloy containing 20% by weight or more of silicon. The connection portion of the ceramic circuit board 13 with the buffer ring 12 is plated with gold, and a wiring pattern is formed on the semiconductor element mounting surface. A ring 14 made of gold-plated stainless steel is connected to the first opening of the aluminum alloy container 11 with Au—Ge solder 15. The ceramic circuit board 13 and the ring 14 are simultaneously connected to the aluminum alloy container 11 to form a container having the ceramic circuit board 13 at the bottom.
【００１９】その後、半導体素子１６をセラミック回路
基板１３上の配線パターン部分（図示せず）にＡｕ−Ｓ
ｎはんだ又は接着剤から成る接合材１７で固定する。半
導体素子１６のボンディング端子とセラミック回路基板
１３上の配線パターンとはボンディングワイヤ１９で接
続する。最後に金めっきを施したステンレス鋼から成る
蓋１８をリング１４の上に開口部を気密に塞ぐように載
せ、シーム溶接機により溶接接合し、気密封止構造のパ
ッケージを完成する。Thereafter, the semiconductor element 16 is formed on the wiring pattern portion (not shown) on the ceramic circuit board 13 by Au-S.
It is fixed with a bonding material 17 made of n solder or an adhesive. The bonding terminals of the semiconductor element 16 and the wiring pattern on the ceramic circuit board 13 are connected by the bonding wires 19. Finally, a lid 18 made of stainless steel plated with gold is placed on the ring 14 so as to hermetically close the opening, and welded and joined by a seam welding machine to complete a package having a hermetically sealed structure.
【００２０】アルミ合金容器として、シリコン２０重量
％以上を含むアルミ合金を使用するのは、剛性上の問題
と、熱膨張係数をステンレスに合わせることの二点から
である。The use of an aluminum alloy containing 20% by weight or more of silicon as the aluminum alloy container is due to two problems: the problem of rigidity and the matching of the coefficient of thermal expansion with that of stainless steel.
【００２１】回路基板としてセラミックを使用するの
は、熱膨張係数が半導体チップに近いこと、絶縁体であ
って回路をパターニングするのが容易であること、強
度、気密性などの点からである。セラミックとしては、
誘電率などの点からＡｌＮやＡｌ2 Ｏ3 が好適である。Ceramics are used as the circuit board because of its thermal expansion coefficient close to that of a semiconductor chip, its ease of patterning a circuit as an insulator, its strength and hermeticity. As a ceramic,
AlN and Al 2 O 3 are preferable in terms of dielectric constant.
【００２２】[0022]
【発明の効果】本発明によれば、小型軽量で、信頼性の
高い半導体回路装置用パッケージを提供できる。According to the present invention, it is possible to provide a compact and lightweight package for a semiconductor circuit device having high reliability.
【図１】本発明の一例を示す断面図である。FIG. 1 is a sectional view showing an example of the present invention.
【図２】従来例を示す断面図である。FIG. 2 is a sectional view showing a conventional example.
１１…アルミ合金容器 １２…緩衝用リング １３…セラミック回路基板 １４…リング １５…Ａｕ−Ｇｅはんだ １６…半導体素子 １７…接合材 １８…蓋 １９…ボンディングワイヤ ２１…容器 ２２…キャリアプレート ２３…半導体素子 ２４…接合材 ２５…回路基板 ２６…蓋 ２７…ボンディングワイヤ 11 ... Aluminum alloy container 12 ... Buffer ring 13 ... Ceramic circuit board 14 ... Ring 15 ... Au-Ge solder 16 ... Semiconductor element 17 ... Bonding material 18 ... Lid 19 ... Bonding wire 21 ... Container 22 ... Carrier plate 23 ... Semiconductor element 24 ... Bonding material 25 ... Circuit board 26 ... Lid 27 ... Bonding wire
Claims (6)
アルミ合金容器と、前記第一の開口部に接合され、シー
ム溶接可能な材料から成るリングと、半導体素子を載
せ、この半導体素子に信号を授受する配線パターンを設
けたセラミック回路基板と、シーム溶接可能な材料から
成る蓋とを具備し、前記セラミック回路基板は前記第二
の開口部に緩衝材を介して接合され、前記蓋は前記第一
の開口部の前記リングに接合され、前記半導体素子を気
密に封止する気密封止構造を形成することを特徴とする
半導体回路装置用パッケージ。1. An aluminum alloy container having a first opening and a second opening, a ring made of a seam-weldable material joined to the first opening, and a semiconductor element are mounted on the container. A ceramic circuit board provided with a wiring pattern for transmitting and receiving signals to and from a semiconductor element; and a lid made of a seam-weldable material, wherein the ceramic circuit board is joined to the second opening via a cushioning material, The package for a semiconductor circuit device, wherein the lid is joined to the ring of the first opening to form an airtight sealing structure that hermetically seals the semiconductor element.
ミ合金から成ることを特徴とする請求項１記載の半導体
回路装置用パッケージ。2. The package for a semiconductor circuit device according to claim 1, wherein the aluminum alloy container is made of an aluminum alloy containing silicon.
ック回路基板の各々の接合部は金めっきが施してあり、
金系はんだで接合することを特徴とする請求項１記載の
半導体回路装置用パッケージ。3. The aluminum alloy container, the ring, and the joint portion of the ceramic circuit board are gold-plated,
The package for a semiconductor circuit device according to claim 1, wherein the package is joined with a gold solder.
とを特徴とする請求項１記載の半導体回路装置用パッケ
ージ。4. The package for a semiconductor circuit device according to claim 1, wherein the ceramic circuit board is made of AlN.
ることを特徴とする請求項１記載の半導体回路装置用パ
ッケージ。5. The package for a semiconductor circuit device according to claim 1, wherein the ceramic circuit board is made of Al 2 O 3 .
求項１記載の半導体回路装置用パッケージ。6. The package for a semiconductor circuit device according to claim 1, wherein the buffer material is made of copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8133167A JPH09321162A (en) | 1996-05-28 | 1996-05-28 | Package for semiconductor circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8133167A JPH09321162A (en) | 1996-05-28 | 1996-05-28 | Package for semiconductor circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09321162A true JPH09321162A (en) | 1997-12-12 |
Family
ID=15098256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8133167A Pending JPH09321162A (en) | 1996-05-28 | 1996-05-28 | Package for semiconductor circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09321162A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016111240A (en) * | 2014-12-08 | 2016-06-20 | 株式会社フジクラ | Housing for accommodating semiconductor device, semiconductor module, and method for manufacturing housing for accommodating semiconductor device |
-
1996
- 1996-05-28 JP JP8133167A patent/JPH09321162A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016111240A (en) * | 2014-12-08 | 2016-06-20 | 株式会社フジクラ | Housing for accommodating semiconductor device, semiconductor module, and method for manufacturing housing for accommodating semiconductor device |
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