JPH09306400A - Electron beam measuring knife edge and manufacture therefor and electron beam measuring method using electron beam measuring knife edge - Google Patents

Abstract

PROBLEM TO BE SOLVED: To measure first and second scanning directional diameters of an electron beam with high accuracy, and accurately correct astigmatism by constituting an electron beam measuring knife edge of plural knife edges. SOLUTION: Multilayer bodies 15, 25 and 35 using interfaces between lamination layers 16 and 17, 26 and 27, and 36 and 37 having respectively and mutually different electron beam transmissivity or reflectance or secondary electron emissivity as knife edges 18, 28 and 38, are arranged on surfaces 14, 24 and 34 vertical to flat main surfaces 13a and 13b, and an electron beam measuring knife edge 11 is constituted. Here, the layers 16, 26 and 36 are formed by using a light element as a main component, and the layers 17, 27 and 37 are formed by using a heavy element as a main component. When an electron beam is measured, the main surface 13a of a base board 12 is scanned in the X direction so as to cross an electron beam knife edge 18, and next, is scanned in the Y direction so as to cross a knife edge 28 or 38, and intensity of an electron tranmsitted to the 13b side of the base board is detected, and a diameter of an electron beam can be calculated with high accuracy by obtained two signals.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic beam used for measuring the diameter or edge sag of an electronic beam in an electronic beam apparatus which can be used for manufacturing and evaluating a semiconductor integrated circuit. The present invention relates to a knife edge for measuring a beam, a manufacturing method thereof, and an electronic beam measuring method using the knife edge for measuring an electronic beam.

[0002]

2. Description of the Related Art Conventionally, the following electron beam measuring method has been proposed in Japanese Patent Application No. 05-273040 with reference to FIGS. 6 and 7.

First, a conventional knife edge for measuring an electron beam, which is used in a conventionally proposed electron beam measuring method, will be described. It is shown by reference numeral 1 in FIG. 6 and is parallel to each other. A substrate 2 having flat major surfaces 3a and 3b and a surface 4 perpendicular to the major surfaces 3a and 3b, and having different electron beam transmittances or reflections on the surface 4 of the substrate 2. The stack 5 in which the first and second layers 6 and 7 having a rate or secondary electron emission rate are stacked in that order forms a knife edge 8 at the interface between the first and second layers 6 and 7. It is formed so as to have.

In this case, the first layer 6 constituting the laminated body 5 is composed of B, C, Be, Al having a relatively small atomic number.
Elements such as Si, or B ₄ C, B containing these elements
It is a layer containing a light element, which is a compound such as N, SiC, or SiN, as a main component. Further, the second layer 7 constituting the laminated body 5 is made of W, Mo, Ta, P having a relatively large atomic number.
It is a layer containing a heavy element as a main component and made of an element such as t, Ru, or Rh, or a compound containing these elements. When the first layer 6 is a layer containing a light element as a main component,
The first layer 6 has a relatively high transmittance for an electron beam and a relatively low reflectance for an electron beam, and the second layer 7 contains a heavy element as a main component. If made up of layers, the second layer 7 has a relatively low transmittance for electron beams and a relatively high reflectance for electron beams. When the first layer 6 is a layer containing a light element as a main component and the second layer 7 is a layer containing a heavy element as a main component, the first and second layers 6 and 7 are They have different secondary electron emission rates.

The above is the knife edge for electron beam measurement used in the conventionally proposed electron beam measurement method.

Next, the above-mentioned conventional electronic beam shown in FIG.
A conventional electron beam measuring method using the knife edge 1 for measuring a beam will be described. One of them is to measure the main surface 3a of the substrate 2 of the knife edge 1 for measuring an electron beam described above with an electron gun ( An electron beam B obtained from a scanning system (not shown) from a knife (not shown) forms an interface between the first and second layers 6 and 7 of the stack 5, as shown in FIGS. 6 and 7A. The edge 8 is scanned in the x direction so as to cross it vertically, for example, and the intensity of the electron B'obtained by transmitting to the side of the main surface 3b of the substrate 2 is detected by an electron detector (not shown). The width of the falling portion of the detection signal S as shown in FIG. 7B output from the electron detector corresponding to the knife edge 8 is in the direction of scanning the main surface 3a of the substrate 2 of the electron beam B. The detected signal S
On the main surface 3a of the substrate 2 of the electron beam B with a width d defined between the position of 10% and the position of 90% of the maximum level of the part that is corresponding to the knife edge 8. Signal processing circuit (not shown) as a diameter in the x direction for scanning
It is measured by the treatment in.

Another example of the conventional electron beam measuring method using the conventional electronic beam measuring knife edge 1 shown in FIG. 6 is a substrate of the electronic beam measuring knife edge 1. The main surface 3a of the second electron beam B obtained in the same manner as described above.
The intensity of the electron B'obtained by scanning with the electron beam is transmitted to the main surface 3b side of the substrate 2 by the electron detector, and the detection signal S as shown in FIG. 7B is output from the electron detector. Is second-order differentiated by a signal processing circuit (not shown), and the second-order differential signal S ′ obtained by the signal processing circuit as shown in FIG. Since the width corresponds to the edge sag seen in the x direction for scanning the main surface 3a of the substrate 2 of the electron beam B, the width d'of that portion is defined as the width d ′ of the edge.
The edge sag seen in the scanning direction on a is measured by the processing in the signal processing circuit.

The above is the conventional electron beam measuring method using the conventional electron beam measuring knife edge shown in FIG.

According to the conventional electron beam measuring method described above, the knife edge 8 of the conventional electron beam measuring knife edge 1 shown in FIG. 6 is formed on the surface 4 of the substrate 2. The knife edge 8 is formed on the main surface 3a of the substrate 2 of the electronic beam measuring knife edge 1 because it is formed by the interface between the first and second layers 6 and 7 constituting the body 5. On the other hand, it has high verticality and high flatness,
Therefore, in the case of one of the conventional electron beam measurement methods described above, the main surface 3 of the substrate 2 of the electron beam measurement knife edge 1 is used.
Even if the electron beam B scanning over a has a fine diameter on the order of the main surface 3a of the substrate 2 such as nano-order, it is possible to measure the diameter of the electron beam B in the x direction with high accuracy. In addition, the other one of the above-mentioned conventional electron beam measurement methods is possible.
In the two cases, even when the electron beam B to be similarly scanned has a fine edge sag like nano-order when viewed on the main surface 3a of the substrate 2, the edge sag in the x direction of the electron beam B is also generated. Can be measured with high accuracy.

[0010]

In the case of the conventional electronic beam measuring method described above with reference to FIGS. 6 and 7, the electronic beam measuring knife edge 1 to be used is used with respect to the main surface 3a of the substrate 2. Since it has only one knife edge 8 due to the interface between the first and second layers 6 and 7 that form the laminated body 5 formed on one vertical surface 4 of the electron beam B, Therefore, even if astigmatism is generated in the electron gun for obtaining the electron beam B and the scanning system, it is possible to correct it with high accuracy. It had the drawback that it could not be done.

Therefore, the present invention does not have the above-mentioned drawbacks.
A new knife edge for electronic beam measurement and its manufacturing method,
And an electronic beam using a knife edge for measuring an electronic beam
The purpose is to propose a measurement method.

[0012]

An electronic beam measuring knife edge according to the first invention of the present application has a flat main surface,
A substrate having at least a first surface and a second surface perpendicular to the main surface, and different electron beam transmittances or reflectances or secondary electron emission rates on the first surface of the substrate. And a first laminated body in which the first and second layers having are laminated in that order are formed such that the interface between the first and second layers serves as a first knife edge, and The second and third laminated bodies in which the third and fourth layers having different electron beam transmittances or reflectances or secondary electron emission rates are laminated on the second surface of the substrate are the third and fourth layers. Is formed so that the interface between the layers is the second knife edge.

In this case, the first layer of the first laminate and the third layer of the second laminate have the same electron beam transmittance or reflectance or secondary electron emission rate, and The second layer of the first laminate and the fourth layer of the second laminate may have the same electron beam transmittance or reflectance or secondary electron emission rate. Further, the first layer of the first laminated body and the third layer of the second laminated body are layers containing a light element as a main component, and the second layer of the second laminated body. The layer and the fourth layer of the second laminated body may be layers containing a heavy element as a main component. Further, the first surface and the second surface are connected to each other, and the first surface of the first laminated body is
Electron beam transmittance or reflectance or secondary electron emission rate in which the first layer and the third layer of the second laminated body are continuously extended on the first and second surfaces. A layer on the first surface and a portion on the second surface of the third layer, respectively, the second layer of the first laminate and the third laminate. Second layer of electron beam transmittance or reflectance or secondary electron emission which extends over the layer having the first electron beam transmittance or reflectance or secondary electron emission rate. Of the first layer and the fourth layer of the fourth layer on the third layer, respectively.

A method of manufacturing an electronic beam measuring knife edge according to the second aspect of the present invention comprises a step of preparing a first substrate having a flat first main surface and a step of preparing the first substrate for the first substrate. Of the first substrate, which is a part of the first main surface, and one end of the first surface with respect to the first surface. Forming a second substrate having at least a second surface extending vertically and a third surface extending from an extension end of the second surface perpendicularly to the second surface. And a first and second layers having different electron beam transmittances or reflectances or secondary electron emission rates on the first surface of the second substrate are laminated in that order. Are formed on the second surface of the second substrate and have different electron beam transmittances or reflections. Rate and secondary electron emission rate form a second stack in which third and fourth layers are stacked in that order and transmit different electron beams to the third surface of the second substrate. From the second substrate by forming a third stack in which fifth and sixth layers having a refractive index or a reflectance or a secondary electron emission rate are stacked in that order. Forming a third substrate on which the first, second and third laminates are respectively formed on the fourth, fifth and sixth surfaces consisting of the second and third surfaces; 3rd to 4th, 5th and 6th
Of the first laminated body on the seventh surface which is a part of the fourth surface of the third substrate and has the second and third main surfaces facing each other perpendicular to the surface. A fifth laminate, which is a part of the second laminate, is formed on the eighth face, which is a partial fifth laminate of the third substrate. And a sixth layered body which is a part of the third layered body is formed on a ninth surface which is a part of the sixth side of the third substrate. And a step of forming.

In this case, the first layer of the first laminated body, the third layer of the second laminated body, and the fifth layer of the third laminated body.
Electron beam transmittance or reflectance that is the same as that of
An electron beam having a secondary electron emission rate, wherein the second layer of the first stack, the fourth layer of the second stack, and the sixth layer of the fourth stack are the same. It is possible to have transmittance or reflectance or secondary electron emission. Further, the first layer of the first laminate, the third layer of the second laminate, and the fifth layer of the third laminate are layers containing a light element as a main component, Further, the second layer of the first laminated body, the fourth layer of the second laminated body, and the sixth layer of the third laminated body are layers containing a heavy element as a main component. Is acceptable. Further, in the step of forming the second substrate, the second
Is formed so that the first surface, the second surface, and the third surface are connected in that order, and in the step of forming the third substrate, the third substrate is Forming a seventh layer having a first electron beam transmittance or a reflectance or a secondary electron emission rate continuously extending on the first, second and third surfaces of the second substrate, and Forming an eighth layer having a second electron beam transmittance or a reflectance or a secondary electron emission rate on the first layer, thereby forming the first layer of the first layered body and the second layered body. The third layer and the fifth layer of the third laminate are respectively formed on the portions of the seventh layer on the first, second and third surfaces, and the first laminate of The second layer of the body, the fourth layer of the second laminate and the sixth layer of the third laminate are the first of the eighth layers,
It is acceptable to form the parts on the second and third layers respectively.

An electronic beam measuring method using the electronic beam measuring knife edge according to the third invention of the present application uses the electronic beam measuring knife edge according to the first invention of the present application, and An electron beam is provided on the main surface of the substrate of the electron beam measuring knife edge as the first and second electron beams.
Are sequentially scanned in the first and second directions so as to traverse the knife edges of the
And first and second electrons obtained by transmitting or reflecting the substrate by scanning in the second and second directions, or first and second electrons obtained by being emitted from the substrate, respectively.
The width of the rising or falling portion of the first detection signal obtained by detecting the intensity of the secondary electrons as the first and second detection signals, respectively, corresponding to the first knife edge. And the width of the rising or falling portion obtained in correspondence with the second knife edge of the second detection signal is defined as follows:
And the respective diameters in the second direction.

The electronic beam measuring method using the electronic beam measuring knife edge according to the fourth invention of the present application uses the electronic beam measuring knife edge according to the first invention of the present application, and An electron beam is provided on the main surface of the substrate of the electron beam measuring knife edge as the first and second electron beams.
Are sequentially scanned in the first and second directions so as to traverse the knife edges of the
And first and second electrons obtained by transmitting or reflecting the substrate by scanning in the second and second directions, or first and second electrons obtained by being emitted from the substrate, respectively.
Intensity detection of the secondary electrons as the first and second detection signals, respectively, and the first and second differential signals of the first and second differential signals obtained by quadratic differential of the first and second detection signals, respectively. The width of the portion obtained corresponding to each of the knife edges is measured as the edge sag in each of the first and second directions of the electron beam.

[0018]

First Embodiment Next, with reference to FIGS. 1 to 5, a first embodiment of an electron beam measuring method according to the present invention will be described.
An embodiment of the electronic beam measuring knife edge according to the present invention and an embodiment of the manufacturing method thereof will be described below.

First, an embodiment of the electronic beam measuring knife edge according to the present invention used in the embodiment of the electronic beam measuring method according to the present invention will be described. Reference numeral 11 in FIG. , Main surfaces 13a and 13b facing each other, a first surface 14 perpendicular to the main surfaces 13a and 13b, and the main surfaces 13a and 13b and the first surface 1
The second surface 24 that is connected to the first surface 14 that is perpendicular to the first surface 14 and the second surface 24 that is perpendicular to the main surfaces 13a and 13b and the second surface 24 are the first surface 14 The third surface 34, which is connected on the side opposite to the first surface 14, and the second surface 2 on the first surface 14 perpendicular to the main surfaces 13a and 13b and the first surface 14.
The fourth surface 44, which is connected on the opposite side to the fourth side, and the main surface 1
A fifth surface connected to the third surface 13a and 13b and the fourth surface 44 perpendicular to the fourth surface 44 on the side opposite to the first surface 14 side.
Of the first and second electron beams having different electron beam transmittances or reflectances or secondary electron emission rates from each other on the first surface 14 of the substrate 12. A first stack 15 having layers 16 and 17 stacked in that order is formed with a first knife edge 18 at the interface between the first and second layers 16 and 17, and the substrate 12 A second laminated body in which third and fourth layers 26 and 27 having different electron beam transmittances or reflectances or secondary electron emission rates are laminated on the second surface 24 of 25 is the third and fourth layers 26 and 2
The second knife edge 28 is formed at the interface between the first and second electrodes 7, and the second and third electron beams have different electron beam transmittances or reflectances or secondary electron emission rates on the third surface 34 of the substrate 12. A third laminate 35, in which the fifth and sixth layers 36 and 37 are laminated in that order, is formed such that the interface between the fifth and sixth layers 36 and 37 is the third knife edge 38. It has a configuration that

In this case, the first layer 1 of the first laminate 15
6 and the third layer 26 of the second stack 25 and the third stack 3
The fifth layer 36 of No. 5 is B having a relatively small atomic number,
It is a layer mainly composed of the same light element, which is composed of elements such as C, Be, Al and Si or compounds such as B ₄ C, BN, SiC and SiN containing these elements, and has the same electron beam transmittance or It has a reflectance or a secondary electron emission rate. Further, the second layer 17 of the first stacked body 15, the fourth layer 27 of the second stacked body 25, and the sixth layer 37 of the third stacked body 35 have a relatively large atomic number W. , Mo, Ta, P
a layer containing the same heavy element as a main component, which is made of an element such as t, Ru, Rh, or a compound containing these elements,
It has the same electron beam transmittance or reflectance or secondary electron emission rate. The first, third and fifth layers 16 and 2
When 6 and 36 are layers containing a light element as a main component, the first, third and fifth layers 16, 26 and 36 have a relatively high transmittance for the electron beam and the electron beam. Has a relatively low reflectance with respect to the second, fourth and sixth
When the layers 17, 27 and 37 of No. 2 are composed mainly of heavy elements, the second, fourth and sixth layers 17, 27 and 37 have a relatively low transmittance for the electron beam. And has a relatively high reflectance for the electron beam. The first, third, and fifth layers 16, 26, and 36 are layers containing a light element as a main component, and the second, fourth, and sixth layers 1
When 7, 27 and 37 are layers containing a heavy element as a main component, the first, third and fifth layers 16, 26 and 36 and the second, fourth and sixth layers 17, 27 and 37 And secondary electron emission rates different from each other.

Further, the layer 1 of the above-mentioned first laminated body 15
6, the third layer 26 of the second stack 25 and the fifth layer 36 of the third stack 35 are the first, second and third layers of the substrate 12.
Of the above-described layer 46 containing a light element as a main component, which extends continuously on the surfaces 14, 24 and 34 of the above, the portion on the first surface 14, the portion on the second surface 24 and the third portion. The second layer 17 of the first laminate 15, the fourth layer 27 of the second laminate 25, and the sixth layer of the third laminate 35 described above. 37 is a portion on the first layer 16 and a portion on the third layer 26 of the above-mentioned layer 57 containing a heavy element as a main component extending on the above-mentioned layer 46 containing a light element as a main component. And on the fifth layer 36, respectively. Since the layer 46 containing the light element as the main component and the layer 47 containing the heavy element as the main component constitute the laminate 45, the above-described first, second and third laminates 15, 25 are provided. And 35 of the first, second, and third stacks 45 of the stack 45 just described that extend continuously over the first, second, and third surfaces 14, 24, and 34 of the substrate 12.
On the second and third surfaces 14, 24 and 34, respectively.

The above is the configuration of the embodiment of the electronic beam measuring knife edge used in the embodiment of the electronic beam measuring method according to the present invention.

Next, an example of an embodiment of a method for producing an electronic beam measuring knife edge according to the present invention for producing an electronic beam measuring knife edge having the above-mentioned structure will be described with reference to the drawings. As will be described with reference to FIGS. 3 and 4, a plate 62 having a flat main surface 64 is prepared in advance, which will be the substrate 12 of the electronic beam measuring knife edge 11 according to the present invention shown in FIG. 1 (FIG. 2A). In this case, the substrate 62 is Si
The main surface 64 of the substrate 62 is made of Si (11
0) plane.

Next, on the main surface 64 of the substrate 62, for example, S
The mask layer 71 made of iO ₂ formed for example by sputtering (FIG. 2B).

Next, a photoresist layer 72 is formed on the mask layer 71, and the principal surface 13 of the first surface 14 of the substrate 12 of the electron beam measuring knife edge 11 according to the present invention shown in FIG.
It is formed so as to extend in the <112> axis direction of Si forming the substrate 62 with a length in the direction along a and 13b (FIG. 2C).

Next, the mask layer 71 is subjected to an etching process using the photoresist layer 72 as a mask to form a mask layer 71 'below the photoresist layer 72 from the mask layer 71 (FIG. 3D). .

Next, the photoresist layer 72 is removed from the mask layer 71 '(FIG. 3E).

Next, using the mask layer 71 'for the substrate 62 as a mask, a depth of 1 using a KOH solution as an etchant
By the etching process of μm, the main surface 64 of the substrate 62 is
The electronic beam according to the present invention shown in FIG.
The surface 14 ′ of the knife edge 11 for measuring the surface to be the first surface 14 of the substrate 12 and one end of the surface 14 ′ extending perpendicularly to the surface 14 ′, after which the present invention shown in FIG. The surface 24 'which becomes the second surface 24 of the substrate 12 of the knife edge 11 for measuring the electron beam according to the above, and extends from the extended end of the surface 24' perpendicularly to the surface 24 '.
From the surface 34 'which becomes the third surface 34 of the substrate 12 of the electronic beam measuring knife edge 11 according to the present invention shown in FIG. 1 and the other end of the surface 14' (opposite to the surface 24 'side). Surface 14 '
After that, the surface 34 'which becomes the fourth surface 34 of the substrate 12 of the electronic beam measuring knife edge 11 according to the present invention shown in FIG. Of the electronic beam measuring knife edge 1 according to the present invention shown in FIG.
A substrate 62 'having a surface 54' which becomes the fifth surface 54 of the first substrate 12 is formed (FIG. 3F). In this case, surface 1
4 ', 34' and 54 'are obtained as consisting of the Si (100) face, and faces 24' and 44 'are obtained as consisting of the Si (111) face.

Next, the mask layer 71 'is removed from the surface 14' of the substrate 62 '(FIG. 4G).

Next, with respect to the substrate 62 ', a material containing a light element as a main component (for example, C) from diagonally above along a surface inclined by, for example, 45 ° with respect to the surface 24' of the substrate 62 '.
Substrate 6 by RF magnetron sputtering of
A layer 46 containing light elements as a main component, which has been continuously extended on the surfaces 14 ', 24' and 34 'of 2', is described later in the electronic beam measuring knife edge 11 according to the present invention shown in FIG. To form a layer 46 'which is then
Similarly, by RF magnetron sputtering of a material containing a heavy element as a main component (for example, W) from diagonally above, on the layer 46 ', the knife edge 11 for electron beam measurement according to the present invention shown in FIG. By forming the layer 47 'which becomes the layer 47 containing a heavy element as a main component, the layers 46' and 47 'are used, and thereafter, the electronic beam measuring knife edge 11 according to the present invention shown in FIG. A laminate 45 'is formed which becomes the laminate 45 described above, and thus the substrate 7
Substrate having a stack 45 'of layers 46' and 47 'extending continuously from 2'to the surfaces 14 ", 24" and 34 "consisting of the surfaces 14', 24 'and 34' respectively. 72 ″ (FIG. 4H).

In this case, on the surface 44 'of the substrate 62',
No laminate such as laminate 45 'is formed, and thus no such laminate is formed on the surface 44 "of the substrate 62" that is the surface 44' of the substrate 62 '. 6
A stack similar to the stack 45 'is formed on the surface 54' of the 2'extending from a position away from the surface 44 'to the side opposite to the surface 44', and thus the substrate 72 ', Such a laminate is so formed on the surface 54 "of the substrate 72 ', which is the surface 54".

Next, the surface of the substrate 72 "facing each other perpendicular to the surfaces 14", 24 ", and 34" is subjected to a sputtering etching process using a focused ion beam on the substrate 72 "as shown in FIG. The electronic beam measuring knife edge 11 according to the present invention has main surfaces 13a and 13b facing each other, which is a part of the surface 14 "of the substrate 72", and a surface of the surface 24 ". Surfaces which are a part of the surface 34 ″ are respectively designated as the first, second and third surfaces 14, 24 and 34 of the electronic beam measuring knife edge according to the present invention shown in FIG. And the layer extending continuously on the third surface 14, 24 and 34 and the layer extending on that layer are described in the electronic beam measuring knife edge 11 according to the invention shown in FIG. The laminated body 45 A substrate having a layer 46 and 47 which are, electron beam according to the invention shown in Figure 1 - is formed as the substrate 12 of the beam measuring knife edge 11 (Fig. 3I).

As described above, the embodiment of the electronic beam measuring knife edge according to the present invention used in the embodiment of the electronic beam measuring method according to the present invention and the embodiment of the manufacturing method thereof are clarified. became.

Next, a description will be given of a first embodiment of the electron beam measuring method according to the present invention using the embodiment of the electron beam measuring knife edge according to the present invention shown in FIG. .

In the first embodiment of the electronic beam measuring method according to the present invention, the electronic beam measuring knife edge 11 according to the present invention shown in FIG. 1 is used and is described above with reference to FIGS. 6 and 7. According to the conventional electron beam measuring method, the main surface 13a of the substrate 12 of the electronic beam measuring knife edge 11 is used.
By an electron beam B obtained from an electron gun (not shown) through a scanning system (not shown), as shown in FIGS. 1 and 5A, at the interface between the layers 16 and 17 of the laminate 15. The first knife edge 18 is scanned (eg, vertically) in the x-direction so that the major surface 3 of the substrate 12 is scanned.
An electron B '(not shown) obtained by transmitting to the b side is detected as a detection signal S1 as shown in FIG. 5B by an electron detector (not shown), and subsequently or before the second signal.
In the y-direction so as to cross (eg, vertically) the second knife edge 28 at the interface between layers 26 and 27 of stack 25 of the stack 25 or the third knife edge 38 at the interface between layers 36 and 37 of stack 35. 5B, and the intensity of the electrons B'obtained by transmitting to the main surface 3b side of the substrate 12 is detected by the same electron detector as the detection signal S2 as shown in FIG. 5B. , The width of the descending portion obtained corresponding to the first knife edge 18 is
Since it corresponds to the diameter in the x direction of scanning the main surface 13a of the substrate 12 of the electronic beam B, the first signal of the detection signal S1
The width d1 defined between the position of 10% and the position of 90% of the maximum level of the part which is corresponding to the knife edge 18 of the electronic beam B is set to the main surface 13 of the substrate 12 of the electron beam B.
The diameter in the x direction for scanning on a is measured by a signal processing circuit (not shown), and is obtained corresponding to the second or third knife edge 28 or 38 of the detection signal S2. Since the width of the portion corresponds to the diameter of the electron beam B in the y direction for scanning the main surface 13a of the substrate 12, the second or third knife edge 2 of the detection signal S2 is detected.
The width d2 defined between the position of 10% and the position of 90% of the maximum level of the falling portion corresponding to 8 or 38 is set on the main surface 13a of the substrate 12 of the electronic beam B. Signal processing circuit (not shown) as the diameter in the y direction for scanning
Measured by

The above is the first embodiment of the electron beam measuring method according to the present invention.

According to the embodiment of the electronic beam measuring method according to the present invention, the electronic beam according to the present invention to be used is used.
The first knife edge 18 of the knife edge 11 for measuring
Are the first and second layers 16 and 1 forming the first laminate 15 formed on the first surface 14 of the substrate 12.
The third and fourth layers forming the second stack 25 formed by the interface between 7 and the second knife edge 28 formed on the second surface 24 of the substrate 12. 26
6 and 7 forming a third stack 35 formed on the third surface 34 of the substrate 12 by a third knife edge 38 formed by the interface between the first stack 27 and the second stack 27.
Of the first, second and third knife edges 18, 2 as they are formed by the interface between the layers 36 and 37 of
8 and 38 both have a high perpendicularity to the main surface 13a of the substrate 12 and a high flatness of 1 nm or less. Therefore, the substrate 12 of the knife edge 11 for electron beam measurement is
Even if the electron beam B that scans on the main surface 13a of the electron beam B has a fine diameter such as a nano order when viewed on the main surface 13a of the substrate 12, the main surface of the substrate 12 of the electron beam B is Both the x-direction and y-direction diameters that scan the surface 13a can be measured with high accuracy.

As is apparent from the above description, the electron beam measuring knife edge 11 according to the present invention to be used is formed on the first surface 14 of the substrate 12 which is perpendicular to the main surface 13a. On the first knife edge 18 due to the interface between the first and second layers 16 and 17 constituting the first laminated body 15 and on the second surface 24 perpendicular to the main surface 13 a of the substrate 12. The second knife edge 28 formed by the interface between the third and fourth layers 26 and 27 that form the second laminated body 25 formed in FIG. The fifth and sixth layers 36 and 37 forming the third laminate 35 formed on the surface 34 of
And a third knife edge 38 due to the interface of
The electron beam B is made to scan the main surface 13a of the substrate 12 of the electron beam measuring knife edge 11 in the x-direction across the first knife edge 18, and then or before the second or third It is possible to scan in the y-direction across the knife edge 28 or 38, whereby both the x-direction and the y-direction diameter of the electron beam B can be measured and thus the electron gun and the scan for obtaining the electron beam B. Even if astigmatism occurs in the system, it can be corrected with high accuracy.

Further, according to the electronic beam measuring knife edge 11 according to the present invention shown in FIG. 1, as is clear from the above-described first embodiment of the electronic beam measuring method according to the present invention. The electron beam measuring knife edge 11 used in the first embodiment of the electron beam measuring method according to the present invention
The diameters in the x and y directions of the electron beam B that scans the main surface 13a of the substrate 12 in the x and y directions can be measured with high accuracy, and the electron beam B Even if astigmatism occurs in the obtained electron gun and scanning system, this can be corrected with high accuracy.

The electronic beam measuring knife edge 11 according to the present invention shown in FIG.
Not only can it be used for electronic beam measurement,
It can be used in the same manner as described above to measure the diameter of an ion beam, an X-ray beam or the like, and the same action / effect can be obtained.

Further, according to the method of manufacturing the electronic beam measuring knife edge shown in FIGS. 3 and 4, the electronic beam measuring knife edge 1 having the excellent action and effect shown in FIG. 1 is obtained. , Can be easily manufactured.

[0042]

Second Embodiment Next, a second embodiment of the electron beam measuring method according to the present invention will be described.

In the second embodiment of the electronic beam measuring method according to the present invention, the electronic beam measuring knife edge 1 according to the present invention shown in FIG. 1 is used, and the electronic beam measuring is performed. Main surface 13a of the substrate 12 of the knife edge 11 for
In the same manner as in the electron beam measuring method according to the present invention described in the first embodiment, the electron beam B obtained from the electron gun through the scanning system moves in the direction crossing the first knife edge 18. The electron beam B, which is obtained by scanning in the x direction and transmitting to the main surface 13b side of the substrate 12 thereby, is intensity-detected as a detection signal S1 as shown in FIG. 5B by an electron detector, and next or before that. , The electron beam B is scanned in the y-direction transverse to the second or third knife edge 28 or 38, whereby the major surface 1 of the substrate 12 is
The electron B'transmitted to the 3b side is intensity-detected by the same electron detector as a detection signal S2 as shown in FIG. Corresponding to the first and second or third knife edges 18 and 28 or 38 of the electron beam measuring knife edge 1 of the differential signals S1 'and S2' respectively shown in FIG. 5C. The widths of the obtained portions correspond to the edge sags in the x-direction and the y-direction of scanning the main surface 13a of the substrate 12 of the electron beam B, respectively. Therefore, the widths d1 'and d2 of those portions are obtained. ′
Is measured as an edge sag of the electron beam B in the x and y directions by the signal processing circuit.

The above is the second embodiment of the electron beam measuring method according to the present invention.

According to the second embodiment of the electron beam measuring method according to the present invention, the first, second and third knife edges 18 of the electron beam measuring knife edge 11 to be used are used. , 28 and 38 are the main surfaces 13a of the substrate 12 of the electron beam measuring knife edge 11 as described in the first embodiment of the electron beam measuring method according to the present invention.
Since the electron beam B has a high verticality and a high flatness, the edge of the electron beam in the x and y directions even if the electron beam B has a fine diameter like a nano-order. Both can be measured with high accuracy.

In the electron beam measuring method according to the present invention described above, the electron beam B causes the knife edge of the electron beam measuring knife edge 11 to change the light element of the laminated body forming the knife edge. The substrate 12 is assumed to be scanned across from the layer containing the main component toward the layer containing the heavy element.
The case where the diameter of the electron beam B is measured has been described by paying attention to the portion that falls corresponding to the knife edge of the detection signal of the electron transmitted through the main surface 13b side of The knife edge of the electron beam measuring knife edge 11 is scanned across from the layer side containing the heavy element as the main component of the laminate forming it to the layer side containing the light element as the main component. It is also possible to measure the diameter of the electron beam B in the same manner by paying attention to the portion rising corresponding to the knife edge of the detection signal of the electron transmitted through the main surface 13b side of the substrate 12. Would be obvious.

In the above-described electron beam measuring method according to the present invention, a laminated body is formed which forms the first, second and third knife edges of the electron beam measuring knife edge 11 used for the method. The electron beam measurement method that takes advantage of the difference in the transmittance of the electron beam between the layer containing the heavy element as the main component and the layer containing the light element as the main component has been described. -Electron beams are formed in a layer containing a heavy element as a main component and a layer containing a light element as a main component that respectively form the first, second and third knife edges of the beam measuring knife edge 11.
The difference in reflectance with respect to the
By obtaining a detection signal from the reflected electrons of the electron beam B which scans the main surface 13a of the substrate 12 of the knife edge 11 for measuring the beam in the x and y directions, or by the electron beam.
There is a difference in the emission rate of secondary electrons between the layer containing a heavy element as a main component and the layer containing a light element as a main component that form the first, second and third knife edges of the measuring knife edge 11, respectively. Taking advantage of this, the knife edge 11 for electronic beam measurement
The main beam 13a of the substrate 12 is scanned by the electron beam B in the x and y directions so as to obtain a detection signal from the secondary electrons which are emitted to obtain a detection signal. It will be apparent that it is possible to make a measurement similar to the one measured by the frame measurement method.

Besides, various modifications and changes may be made without departing from the spirit of the present invention.

[0049]

According to the electron beam measuring knife edge of the present invention, by using the electron beam measuring method of the present invention, even if the diameter of the electron beam is very small, Both the diameters in the first and second scanning directions can be measured with high accuracy, and the edge sag in the first and second scanning directions of the electron beam can be measured with high accuracy.

According to the method of manufacturing the electronic beam measuring knife edge of the present invention, the excellent electronic beam measuring knife edge of the present invention can be easily manufactured.

According to the electron beam measuring method using the electron beam measuring knife edge according to the present invention, even if the diameter of the electron beam is minute, the first and second electron beam Both the diameter in the scanning direction can be measured with high accuracy, and the edge sag of the electron beam in the first and second scanning directions can be measured with high accuracy.

[Brief description of drawings]

FIG. 1 is a schematic perspective view showing an embodiment of an electronic beam measuring knife edge according to the present invention.

FIG. 2 is a schematic perspective view in sequential steps showing an embodiment of a method for manufacturing a knife edge for measuring an electronic beam according to the present invention.

FIG. 3 is a schematic perspective view in a sequential process subsequent to the sequential process shown in FIG. 2, showing an embodiment of a method for manufacturing an electronic beam measuring knife edge according to the present invention.

4 is a schematic perspective view in a sequential process subsequent to the sequential process shown in FIG. 3, showing an embodiment of a method for manufacturing a knife edge for electronic beam measurement according to the present invention.

5 is a diagram for explaining an electronic beam measuring method according to the present invention using the electronic beam measuring knife edge shown in FIG. 1. FIG.

FIG. 6 is a schematic perspective view showing a conventional electronic beam measuring knife edge.

FIG. 7 is a diagram for explaining a conventional electron beam measuring method using the conventional electron beam measuring knife edge shown in FIG. 6;

[Explanation of symbols]

1, 11 Electronic beam measuring knife edge 2, 12, 62 Substrate 3a, 3b, 13a, 13b, 64 Main surface 4, 14, 24, 34, 44, 54 Surface 14 ', 24', 34 ', 44 ', 54' surface 5, 15, 25, 35, 45, 45 'laminated body 6, 16, 26, 36, 46, 46' layer containing light element as main component 7, 17, 27, 37, 47, 47 'Layer containing heavy element as a main component 8, 18, 28, 38 Knife edge 71 Mask layer 71' Mask layer 72 Photoresist layer B Electron beam B'Electron

Front page continuation (72) Inventor Takahiro Makino 3-19-2 Nishishinjuku, Shinjuku-ku, Tokyo Within Nippon Telegraph and Telephone Corporation (72) Inventor Hisaki Takenaka 3-19-2 Nishishinjuku, Shinjuku-ku, Tokyo Nippon Telegraph and Telephone Corporation Phone Co., Ltd.

Claims (10)

[Claims] 1. A substrate having a flat main surface and at least first and second surfaces perpendicular to the main surface, the electron beam transmittances different from each other on the first surface of the substrate. Alternatively, the first laminated body in which the first and second layers having the reflectance or the secondary electron emission rate are laminated in that order uses the interface between the first and second layers as the first knife edge. And the third and fourth layers having different electron beam transmittances or reflectances or secondary electron emission rates are laminated on the second surface of the substrate. A knife edge for electronic beam measurement, wherein the laminate is formed so that the interface between the third and fourth layers serves as a second knife edge. 2. The electronic beam measuring knife edge according to claim 1, wherein the first layer of the first laminate and the third layer of the second laminate are provided.
Electron beam transmittance or reflectance that is the same as that of
A second layer of the first stack and a fourth layer of the second stack having a secondary electron emission rate.
Electron beam transmittance or reflectance that is the same as that of
A knife edge for measuring an electron beam, which has a secondary electron emission rate. 3. The electronic beam according to claim 1 or 2.
In the knife edge for measuring thickness, the first layer of the first laminate and the third layer of the second laminate are
Is a layer containing a light element as a main component, and the second layer of the second laminate and the fourth layer of the second laminate.
Knife layer for electron beam measurement, characterized in that said layer is a layer containing a heavy element as a main component. 4. The method according to claim 1, 2 or 3.
In the electronic beam measuring knife edge described above, the first surface and the second surface are connected to each other, and the first layer of the first laminate and the third layer of the second laminate are connected.
On the first surface of the layer having a first electron beam transmittance or a reflectance or a secondary electron emission coefficient that continuously extends on the first and second surfaces. A second layer of the first laminate and a third layer of the third laminate.
A second layer extending over the layer having the first electron beam transmittance or reflectance or the secondary electron emission rate.
Of the layer having the electron beam transmittance or the reflectance or the secondary electron emission rate, which are respectively on the first layer and on the third layer of the fourth layer. Knife edge for electronic beam measurement. 5. A step of preparing a first substrate having a flat first main surface, and an etching process from the side of the first main surface of the first substrate to remove the first substrate from the first substrate. A first surface that is a part of the first main surface, a second surface that extends perpendicularly to the first surface from one end of the first surface, and a second surface thereof. Forming a second substrate having at least a third surface extending perpendicularly to the second surface from the extended end of the second substrate, and forming a second substrate on the first surface of the second substrate. First having different electron beam transmittance or reflectance or secondary electron emission rate
And a second layer to form a first laminated body in which they are laminated in that order, and different electron beam transmittances or reflectances or secondary electron emission rates are provided on the second surface of the second substrate. Forming a second laminated body in which the third and fourth layers having the above are laminated in that order, and different electron beam transmittances or reflectances or secondary degrees are formed on the third surface of the second substrate. By forming a third laminate in which fifth and sixth layers having an electron emission rate are laminated in that order, from the second substrate, the first, second and third surfaces thereof are formed. Forming a third substrate on which the first, second and third laminated bodies are formed on the fourth, fifth and sixth surfaces, respectively. 4, having a second and a third main surface which face each other perpendicular to the fifth and sixth surfaces, and The fourth laminated body which is a part of the first laminated body is formed on the seventh surface which is a part of the fourth surface of the third substrate, and the fifth laminated body of the third substrate is formed. A fifth laminate, which is a part of the second laminate, is formed on the eighth face, which is a part of the face, and a ninth laminate, which is a part of the sixth face of the third substrate. And a step of forming a fourth substrate on which a sixth laminated body which is a part of the third laminated body is formed, and a method of manufacturing a knife edge for measuring an electron beam, the method comprising: . 6. The method of manufacturing a knife edge for measuring an electron beam according to claim 5, wherein the first layer of the first laminate and the third layer of the second laminate are used.
And the fifth layer of the third laminated body have the same electron beam transmittance or reflectance or secondary electron emission rate, and the second layer of the first laminated body and the second layer of the second laminated body are 4th of laminated body
And the sixth layer of the fourth laminated body have the same electron beam transmittance or reflectance or secondary electron emission rate. 7. The method for manufacturing a knife edge for measuring an electron beam according to claim 5 or 6, wherein the first layer of the first laminate and the third layer of the second laminate are provided.
And a fifth layer of the third laminate are layers containing a light element as a main component, and the second layer of the first laminate and the fourth layer of the second laminate are
And a sixth layer of the third laminated body are layers containing a heavy element as a main component. A method for manufacturing a knife edge for measuring an electron beam, comprising: 8. Claim 5 or claim 6 or claim 8.
In the method of manufacturing a knife edge for electronic beam measurement according to the above, in the step of forming the second substrate, the second substrate has a first surface, a second surface, and a third surface thereof. In the step of forming the third substrate, the third substrate is formed so as to be connected in order, and the third substrate is continuously extended on the first, second and third surfaces of the second substrate. A seventh layer having an electron beam transmittance or reflectance of 1 or a secondary electron emission rate of 1 is formed, and a second electron beam transmittance or reflectance or a secondary electron emission rate is formed on the seventh layer. By forming the eighth layer, the first layer of the first laminate, the third layer of the second laminate, and the fifth layer of the third laminate form the seventh layer. And the second layer of the first laminated body. Serial second
Forming a fourth layer of the laminated body and a sixth layer of the third laminated body on the above first, second and third layers of the eighth layer, respectively. A method of manufacturing a knife edge for measuring electronic beams characterized by. 9. The electronic beam measuring knife edge according to claim 1, claim 2, claim 3 or claim 4 is used, and the electronic beam measuring knife edge is on the main surface of the substrate. An electron beam is sequentially scanned in the first and second directions respectively across the first and second knife edges, and the substrate is scanned by scanning the electron beams in the first and second directions. Intensity is detected as first and second detection signals of the first and second electrons obtained by transmitting or reflecting respectively or the first and second secondary electrons obtained by being emitted from the substrate, respectively, Corresponding to the width of the rising or falling portion obtained corresponding to the first knife edge of the first detection signal, and the second knife edge of the second detection signal. Standing up Or the width of the falling portion is measured as the diameter of the electron beam in each of the first direction and the second direction. E-beam used
Measuring method. 10. The electronic beam measuring knife edge according to claim 1, claim 2, claim 3 or claim 4 is used, and the electronic beam measuring knife edge is on the main surface of the substrate. An electron beam is sequentially scanned in the first and second directions respectively across the first and second knife edges, and the substrate is scanned by scanning the electron beams in the first and second directions. Intensity is detected as first and second detection signals of the first and second electrons obtained by transmitting or reflecting respectively or the first and second secondary electrons obtained by being emitted from the substrate, respectively, The width of the portion obtained corresponding to each of the first and second knife edges of the first and second differential signals obtained by second-order differentiating the first and second detection signals is defined as follows: The first and the above beam Electron beam using a knife-edge beam measurement - - electron beam, characterized by measuring the respective edges of the two directions anyone beam measurement method.