JPH09298267A - Lead frame with heat sink for semiconductor device - Google Patents
Lead frame with heat sink for semiconductor deviceInfo
- Publication number
- JPH09298267A JPH09298267A JP8114700A JP11470096A JPH09298267A JP H09298267 A JPH09298267 A JP H09298267A JP 8114700 A JP8114700 A JP 8114700A JP 11470096 A JP11470096 A JP 11470096A JP H09298267 A JPH09298267 A JP H09298267A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- lead frame
- semiconductor element
- semiconductor device
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体素子の電極
パッドに接続するリード及び半導体チップの放熱を行う
放熱板を備えた半導体装置用放熱板付きリードフレーム
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame with a heat radiating plate for a semiconductor device, which includes a lead connected to an electrode pad of a semiconductor element and a heat radiating plate for radiating heat from a semiconductor chip.
【０００２】[0002]
【従来の技術】図３は従来の半導体装置用放熱板付きリ
ードフレームの正面断面図である。半導体素子（不図
示）を搭載すると共に放熱器として機能する金属製の放
熱板１の片面の周辺には、“ロ”の字形に切抜加工され
た両面接着剤付きテープ２を介してリードフレーム３の
一端が固定されている。このリードフレーム３は所定間
隔に複数本が平行配置されており、各々の放熱板側端は
インナーリードとして用いられ、他端はアウターリード
として用いられる。2. Description of the Related Art FIG. 3 is a front sectional view of a conventional lead frame with a heat sink for a semiconductor device. A lead frame 3 is provided with a double-sided adhesive-attached tape 2 cut out in a "B" shape around one side of a metal heat sink 1 on which a semiconductor element (not shown) is mounted and which functions as a heat sink. One end of is fixed. A plurality of lead frames 3 are arranged in parallel at a predetermined interval, and the ends on the side of each heat dissipation plate are used as inner leads and the other ends are used as outer leads.
【０００３】図３の構成においては、半導体素子を放熱
板１に搭載すれば、半導体素子の発熱が放熱板１によっ
て放熱される。また、リードフレーム３は両面接着剤付
きテープ２によって絶縁されているので、半導体素子の
電極パッドとの接続が支障なく行える。図４は半導体装
置用放熱板付きリードフレームの他の構成例を示す正面
断面図である。In the structure of FIG. 3, if the semiconductor element is mounted on the heat sink 1, the heat generated by the semiconductor element is dissipated by the heat sink 1. Further, since the lead frame 3 is insulated by the tape 2 with the double-sided adhesive, the connection with the electrode pad of the semiconductor element can be performed without any trouble. FIG. 4 is a front cross-sectional view showing another configuration example of the lead frame with a heat sink for a semiconductor device.
【０００４】放熱板１の両面の全域には防錆めっき４
ａ，４ｂ（例えば、Ｚｎ−Ｃｒ系が用いられる）が施さ
れ、他面の全域には接着剤５が塗布されている。この防
錆めっき４ａ，４ｂを設けるに際しては、放熱板１の表
面を粗化（粗さＲmax ＝５μｍ）した後に施される。放
熱板１の周辺には、リードフレーム３の一端が接着剤５
に貼着固定される。Rust-proof plating 4 is applied to the entire area of both sides of the heat sink 1.
a, 4b (for example, Zn-Cr system is used), and the adhesive 5 is applied to the entire other surface. The anticorrosion plating 4a, 4b is provided after roughening the surface of the heat dissipation plate 1 (roughness Rmax = 5 μm). At the periphery of the heat sink 1, one end of the lead frame 3 has an adhesive 5
It is attached and fixed to.
【０００５】この構成によれば、接着剤５が放熱板１の
全域に設けられているため、接着剤５とレジンの接触す
る部分が形成され、この部分では極度に高い吸湿状態に
ならない限り、比較的良好な接着強度を得ることができ
る。図５は図４の放熱板付きリードフレームを用いた半
導体装置を示す正面断面図である。According to this structure, since the adhesive 5 is provided on the entire area of the heat dissipation plate 1, a portion where the adhesive 5 and the resin contact each other is formed, and unless this portion has an extremely high moisture absorption state. A relatively good adhesive strength can be obtained. FIG. 5 is a front sectional view showing a semiconductor device using the lead frame with a heat sink of FIG.
【０００６】接着剤５の中央部には、半導体素子６が貼
着され、その電極パッド（不図示）とリードフレーム３
の端部とがボンディングワイヤ７によって接続される。
この後、放熱板１及び半導体素子６を中心にして、リー
ドフレーム３のみが露出した状態になり且つ所定の外形
になるように、モールドレジン８が施される。モールド
レジン８が施されたことにより、半導体素子６は外部か
ら保護され、且つ接続部等が外気から遮断されるので、
経年変化が防止され、信頼性を向上させることができ
る。A semiconductor element 6 is attached to the central portion of the adhesive 5, and its electrode pad (not shown) and the lead frame 3 are attached.
Is connected to the end of the substrate by a bonding wire 7.
After that, the mold resin 8 is applied so that only the lead frame 3 is exposed and has a predetermined outer shape with the heat sink 1 and the semiconductor element 6 as the centers. By applying the mold resin 8, the semiconductor element 6 is protected from the outside, and the connecting portion and the like are shielded from the outside air.
Aging can be prevented and reliability can be improved.
【０００７】[0007]
【発明が解決しようとする課題】しかし、従来の放熱板
付きリードフレームによると、放熱板には、一般に圧延
銅条が用いられているが、圧延銅はレジンとの密着性が
十分でなく、また、通常のフレームのアイランドに比べ
て大きな面積になるため、放熱板１の裏面及び素子周囲
の圧延銅の露出部ではんだリフロー工程等で剥離クラッ
クを生じるという問題がある。However, according to the conventional lead frame with a radiator plate, a rolled copper strip is generally used for the radiator plate, but the rolled copper does not have sufficient adhesion to the resin. In addition, since the area is larger than that of an island of a normal frame, there is a problem that peeling cracks occur in the back surface of the heat sink 1 and the exposed portion of the rolled copper around the element during the solder reflow process or the like.
【０００８】また、図５の構成では、接着剤５とモール
ドレジン８の接触する部分は、極度に高い吸湿状態にな
らない限り、比較的良好な接着強度を得ることができる
が、高い吸湿状態下では放熱板１の表面との界面９にお
いて接着強度が低下する現象を本発明者らは見出した。
この接着強度の低下により、界面９にパッケージクラッ
クの起点が生じる可能性が生じてきた（これによる素子
周辺の剥離クラックが懸念される）。Further, in the structure of FIG. 5, a relatively good adhesive strength can be obtained at a portion where the adhesive 5 and the mold resin 8 come into contact with each other, unless an extremely high moisture absorption state is obtained. Then, the present inventors have found that the adhesive strength is lowered at the interface 9 with the surface of the heat sink 1.
Due to this decrease in the adhesive strength, there is a possibility that the origin of the package crack may occur at the interface 9 (there is a concern about peeling cracks around the element due to this).
【０００９】そこで本発明は、半導体素子周囲における
剥離クラック等の発生を防止することのできる半導体装
置用放熱板付きリードフレームを提供することを目的と
している。Therefore, an object of the present invention is to provide a lead frame with a heat sink for a semiconductor device, which can prevent the occurrence of peeling cracks and the like around the semiconductor element.
【００１０】[0010]
【課題を解決するための手段】上記の目的を達成するた
めに、この発明は、半導体素子が搭載される金属製の放
熱板と、この放熱板の周辺に接着剤又は接着テープを介
して固定されるリードフレームとを備えた放熱板付きリ
ードフレームにおいて、前記放熱板は、少なくとも前記
半導体素子の搭載面が所定の表面粗さに粗化された粗化
面を有する構成にしている。In order to achieve the above-mentioned object, the present invention is directed to a metal radiator plate on which a semiconductor element is mounted, and a peripheral portion of the radiator plate fixed with an adhesive or an adhesive tape. In the lead frame with a heat radiating plate, the heat radiating plate has at least a roughened surface roughened to a predetermined surface roughness on the mounting surface of the semiconductor element.
【００１１】この構成によれば、形成された粗化面がモ
ールドレジンが接着される表面の粗度を向上させ、高湿
時でも高い接着強度を得ることができる。この結果、半
導体素子の周囲にレジンクラックや剥がれが生じるのを
防止することができる。前記粗化面は、１μｍ以上にな
るようにするのがよい。この構成によれば、形成された
表面粗さによってモールドレジンとの接着性が高められ
ると共に、防錆処理が設け易くなる。According to this structure, the roughened surface thus formed improves the roughness of the surface to which the mold resin is bonded, and high bonding strength can be obtained even in high humidity. As a result, resin cracks and peeling around the semiconductor element can be prevented. The roughened surface is preferably 1 μm or more. According to this configuration, the formed surface roughness enhances the adhesiveness to the mold resin and facilitates the provision of the rust preventive treatment.
【００１２】前記粗化面は、防錆処理を施すことができ
る。この構成によれば、防錆処理を設けたことにより、
放熱板の表面状態が安定し、信頼性が向上する。また、
モールドレジンとの接着性が向上する。前記防錆処理面
は、有機系プライマを塗布することができる。この構成
によれば、モールドレジンとの接着性が良好になり、接
着強度が向上する。The roughened surface may be subjected to a rust preventive treatment. According to this configuration, by providing the rust prevention treatment,
The surface state of the heat sink is stable and reliability is improved. Also,
The adhesiveness with the mold resin is improved. An organic primer can be applied to the rustproof surface. According to this structure, the adhesiveness with the mold resin is improved and the adhesive strength is improved.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を基に説明する。図１は本発明による半導体装置
用放熱板付きリードフレームの一実施の形態を示す正面
断面図である。半導体装置の信頼性に影響を与えるの
は、放熱板裏面及び半導体素子周囲の剥離である。この
問題を解決すべく、本発明者らはレジンの密着性につい
て種々の評価を行った。その結果、高吸湿時にも高い接
着強度を示した表面処理で最も効果的であったのは、放
熱板の表面の粗化であった。また、防錆処理、更にはシ
ランカップリング剤に代表される有機系プライマを塗布
することも有効であることを見出した。そして、これら
の処理は連続表面処理が可能であるため、放熱板付きリ
ードフレームの低価格化も容易である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a front sectional view showing an embodiment of a lead frame with a heat sink for a semiconductor device according to the present invention. The peeling of the back surface of the heat sink and the periphery of the semiconductor element affects the reliability of the semiconductor device. In order to solve this problem, the present inventors have made various evaluations on the adhesiveness of the resin. As a result, the most effective surface treatment that showed high adhesive strength even during high moisture absorption was roughening of the surface of the heat sink. It was also found that it is effective to apply rust-prevention treatment and further apply an organic primer represented by a silane coupling agent. Since these treatments are capable of continuous surface treatment, it is easy to reduce the cost of the lead frame with a heat sink.
【００１４】そこで、本発明では、図１に示すように界
面の接着強度を向上させるために、両面に粗化処理（粗
さＲmax が１μｍ以上、ここではＲmax ＝５μｍ）を施
した放熱板１０を用いている。更に、粗化処理面には、
防錆処理が施されている。この防錆処理として、本発明
ではＺｎ−Ｃｒ系による防錆めっき１１ａ，１１ｂを用
いている。更には、シランカップリングの塗布（別工程
により行われる）が行われる。Therefore, in the present invention, as shown in FIG. 1, in order to improve the adhesive strength of the interface, the both surfaces are subjected to roughening treatment (roughness R max is 1 μm or more, R max = 5 μm in this case). The plate 10 is used. Furthermore, on the roughened surface,
Has been rustproofed. In the present invention, as the anticorrosion treatment, Zn-Cr based anticorrosion platings 11a and 11b are used. Furthermore, silane coupling is applied (performed in a separate step).
【００１５】放熱板１０の片面の周辺には、“ロ”の字
形に切抜加工された両面接着剤付きテープ１２を介して
リードフレーム１３の一端が固定されている。このリー
ドフレーム１３は所定間隔に複数本が平行配置されてお
り、各々の放熱板側端はインナーリードとして用いら
れ、他端はアウターリードとして用いられる。以上の表
面処理により、高吸湿時にも高い接着強度を得ることが
できる。One end of the lead frame 13 is fixed to the periphery of one surface of the heat dissipation plate 10 via a double-sided adhesive-attached tape 12 cut out in a "B" shape. A plurality of lead frames 13 are arranged in parallel at a predetermined interval, and the ends on the side of each radiator plate are used as inner leads and the other ends are used as outer leads. By the above surface treatment, high adhesive strength can be obtained even when high moisture absorption.
【００１６】図２は図１の放熱板付きリードフレームを
用いた半導体装置を示す正面断面図である。図１に示し
た構成の放熱板１０の片面の中央部には、接着剤１４の
半導体素子１５が貼着され、その電極パッド（不図示）
とリードフレーム１３の端部は、ボンディングワイヤ１
６によって接続される。この後、放熱板１０及び半導体
素子１５を中心にして、リードフレーム１３のみが露出
した状態になり、かつ所定の外形々状が形成されるよう
にしてモールドレジン１７が施される。FIG. 2 is a front sectional view showing a semiconductor device using the lead frame with a heat sink of FIG. A semiconductor element 15 of an adhesive 14 is attached to the central portion of one surface of the heat dissipation plate 10 having the configuration shown in FIG. 1 and its electrode pad (not shown).
The ends of the lead frame 13 and the bonding wire 1
6. After that, the mold resin 17 is applied so that only the lead frame 13 is exposed with the heat sink 10 and the semiconductor element 15 at the center and a predetermined outer shape is formed.
【００１７】このような構成により、半導体素子１５の
周囲の放熱板１０の露出面（両面接着剤付きテープ１２
及び接着剤１４に覆われていない部分）はモールドレジ
ン１７に接触するが、図５の場合と異なり、放熱板１０
の露出面は防錆めっき１１ａ，１１ｂであるため、この
界面１８の接着強度は向上しており、半導体素子１５の
周囲にレジンクラックや剥がれを生じることがない。With such a structure, the exposed surface of the heat sink 10 around the semiconductor element 15 (the double-sided adhesive-attached tape 12).
And the portion not covered with the adhesive 14) contacts the mold resin 17, but unlike the case of FIG.
Since the exposed surface of is the rust-preventive plating 11a, 11b, the adhesive strength of this interface 18 is improved, and resin cracks and peeling do not occur around the semiconductor element 15.
【００１８】なお、上記の各構成においては、リードフ
レームを両面接着剤付きテープを用いて固定するものと
したが、接着剤を塗布するようにしてもよい。Although the lead frame is fixed by using the double-sided adhesive-attached tape in each of the above-mentioned configurations, the adhesive may be applied.
【００１９】[0019]
【発明の効果】以上説明した通り、本発明は、放熱板の
少なくとも前記半導体素子の搭載面を所定の表面粗さに
粗化した粗化面を有する構成にしたので、高湿時でも高
い接着強度を得ることができ、レジンクラックや剥がれ
が半導体素子の周囲に生じるのを防止することができ
る。As described above, according to the present invention, since at least the mounting surface of the semiconductor element of the heat sink has a roughened surface that is roughened to a predetermined surface roughness, high adhesion is achieved even in high humidity. It is possible to obtain strength and prevent resin cracks and peeling from occurring around the semiconductor element.
【図１】本発明による半導体装置用放熱板付きリードフ
レームの一実施の形態を示す正面断面図である。FIG. 1 is a front sectional view showing an embodiment of a lead frame with a heat sink for a semiconductor device according to the present invention.
【図２】図１の放熱板付きリードフレームを用いて構成
した半導体装置を示す正面断面図である。FIG. 2 is a front sectional view showing a semiconductor device configured by using the lead frame with a heat dissipation plate of FIG.
【図３】従来の半導体装置用放熱板付きリードフレーム
を示す正面断面図である。FIG. 3 is a front cross-sectional view showing a conventional lead frame with a heat sink for a semiconductor device.
【図４】半導体装置用放熱板付きリードフレームの従来
の他の構成例を示す正面断面図である。FIG. 4 is a front sectional view showing another conventional configuration example of a lead frame with a heat sink for a semiconductor device.
【図５】図４の放熱板付きリードフレームを用いて構成
した半導体装置を示す正面断面図である。5 is a front cross-sectional view showing a semiconductor device configured by using the lead frame with a heat dissipation plate of FIG.
１０ 放熱板 １１ａ，１１ｂ 防錆めっき １２ 両面接着剤付きテープ １３ リードフレーム １４ 接着剤 １５ 半導体素子 １６ ボンディングワイヤ １７ モールドレジン １８ 界面 10 Heat Dissipating Plates 11a, 11b Anticorrosion Plating 12 Tape with Double-sided Adhesive 13 Lead Frame 14 Adhesive 15 Semiconductor Element 16 Bonding Wire 17 Mold Resin 18 Interface
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高萩 茂治 茨城県土浦市木田余町3550番地 日立電線 株式会社システムマテリアル研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shigeharu Takahagi 3550 Kidayomachi, Tsuchiura City, Ibaraki Prefecture Hitachi Cable Ltd. System Materials Research Center
Claims (4)
と、この放熱板の周辺に接着剤又は接着テープを介して
固定されるリードフレームとを備えた放熱板付きリード
フレームにおいて、 前記放熱板は、少なくとも前記半導体素子の搭載面が所
定の表面粗さに粗化された粗化面を有することを特徴と
する半導体装置用放熱板付きリードフレーム。1. A lead frame with a heat radiating plate, comprising: a metal heat radiating plate on which a semiconductor element is mounted; and a lead frame fixed around the heat radiating plate with an adhesive or an adhesive tape. A lead frame with a heat sink for a semiconductor device, wherein the plate has a roughened surface at least the mounting surface of the semiconductor element is roughened to a predetermined surface roughness.
有すことを特徴とする請求項１記載の半導体装置用放熱
板付きリードフレーム。2. The lead frame with a heat sink for a semiconductor device according to claim 1, wherein the roughened surface has a surface roughness of 1 μm or more.
を特徴とする請求項１又は２記載の半導体装置用放熱板
付きリードフレーム。3. The lead frame with a heat sink for a semiconductor device according to claim 1, wherein the roughened surface is subjected to rust prevention treatment.
て前記防錆処理を施すことを特徴とする請求項３記載の
半導体装置用放熱板付きリードフレーム。4. The lead frame with a heat sink for a semiconductor device according to claim 3, wherein an organic primer is applied to the roughened surface to perform the rust prevention treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8114700A JPH09298267A (en) | 1996-05-09 | 1996-05-09 | Lead frame with heat sink for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8114700A JPH09298267A (en) | 1996-05-09 | 1996-05-09 | Lead frame with heat sink for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09298267A true JPH09298267A (en) | 1997-11-18 |
Family
ID=14644443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8114700A Pending JPH09298267A (en) | 1996-05-09 | 1996-05-09 | Lead frame with heat sink for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09298267A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106165209A (en) * | 2014-03-31 | 2016-11-23 | 恩普乐股份有限公司 | Retaining mechanism and socket for electronic component |
-
1996
- 1996-05-09 JP JP8114700A patent/JPH09298267A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106165209A (en) * | 2014-03-31 | 2016-11-23 | 恩普乐股份有限公司 | Retaining mechanism and socket for electronic component |
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