JPH09286691A - Production of quarts glass crucible - Google Patents

Production of quarts glass crucible

Info

Publication number
JPH09286691A
JPH09286691A JP8105046A JP10504696A JPH09286691A JP H09286691 A JPH09286691 A JP H09286691A JP 8105046 A JP8105046 A JP 8105046A JP 10504696 A JP10504696 A JP 10504696A JP H09286691 A JPH09286691 A JP H09286691A
Authority
JP
Japan
Prior art keywords
mold
glass crucible
quartz glass
graphite electrode
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8105046A
Other languages
Japanese (ja)
Other versions
JP3699778B2 (en
Inventor
Hiroyuki Watanabe
博行 渡辺
Tatsuhiro Sato
龍弘 佐藤
Shigeo Mizuno
繁夫 水野
Mitsuo Matsumura
光男 松村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Quartz Products Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Priority to JP10504696A priority Critical patent/JP3699778B2/en
Publication of JPH09286691A publication Critical patent/JPH09286691A/en
Application granted granted Critical
Publication of JP3699778B2 publication Critical patent/JP3699778B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/09Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

Abstract

PROBLEM TO BE SOLVED: To provide a production method of a quartz glass crucible capable of preventing formation of an aggregate of fine bubbles to the crucible and industrially useful. SOLUTION: In the production method of the quartz glass crucible, after forming a packed layer of silicon dioxide powder along an inner peripheral surface of a mold whose upper part is open, a graphite electrode is set at the inside of the mold after preheating at >=800 deg.C under an inert gas atmosphere, and the packed layer is heat melted by arc discharge while rotating the mold to form the quartz glass crucible.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、シリコン単結晶の
製造に用いられる石英ガラスるつぼの製造方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a quartz glass crucible used for manufacturing a silicon single crystal.

【0002】[0002]

【従来の技術】従来、シリコン単結晶製造用の石英ガラ
スるつぼは、上部開口型の内周面に二酸化ケイ素粉末を
充填・形成し、型の上部開口部よりグラファイト電極を
型内にセットした後、型を回転させながら電極間に生じ
るアーク放電により上記二酸化ケイ素粉末を加熱溶融し
て成形している。
2. Description of the Related Art Conventionally, a quartz glass crucible for producing a silicon single crystal is prepared by filling and forming silicon dioxide powder on the inner peripheral surface of an upper opening mold and setting a graphite electrode in the mold through the upper opening of the mold. The silicon dioxide powder is heated and melted by the arc discharge generated between the electrodes while the mold is rotated to form the powder.

【0003】[0003]

【発明が解決しようとする課題】上記方法によって製造
される石英ガラスるつぼは、加熱時に蒸発した二酸化ケ
イ素が、より低温雰囲気に曝されている電極の上部に接
触して凝縮し、この凝縮物がるつぼ内に落下してその落
下箇所に微小泡集合体を生じる。この微小泡集合体がる
つぼの内表面近傍に存在する場合には、この微小泡がシ
リコン単結晶の製造時に膨張して開放泡となり、その
際、表面の剥れた石英ガラスのかけらなどが溶融シリコ
ン中に混入し、結晶に相転移を起こすなどの問題を生じ
ていた。この問題を解決するため、従来は、通電中の型
内の気流を制御するか、型内の雰囲気を強制排気するこ
とで、溶融雰囲気中から二酸化ケイ素の蒸発成分を除去
していたが、十分満足できる効果が得られなかった。
In the quartz glass crucible produced by the above method, the silicon dioxide vaporized during heating contacts the upper portion of the electrode exposed to a lower temperature atmosphere and condenses. It falls into the crucible and a micro-bubble aggregate is generated at the place where it falls. When the aggregate of microbubbles is present near the inner surface of the crucible, the microbubbles expand and become open bubbles during the production of the silicon single crystal, and at that time, the fragments of quartz glass whose surface is peeled off are melted. It was mixed in silicon and caused problems such as phase transition in crystals. In order to solve this problem, conventionally, the vaporized component of silicon dioxide was removed from the molten atmosphere by controlling the air flow in the mold during energization or by forcibly exhausting the atmosphere in the mold. The satisfactory effect was not obtained.

【0004】本発明者らは、上記の点について鋭意研究
を重ねた結果、上記微小泡集合体の発生のほとんどは、
グラファイト電極に通電を開始した初期において蒸発し
た二酸化ケイ素が、初期の低温状態にあるグラファイト
電極の上部で冷やされて凝集し、落下して形成されるも
のであることを究明し、通電前にグラファイト電極を所
定の温度領域において予熱することにより、上記問題が
解消できることを見出した。したがって、本発明は、る
つぼに微小泡集合体の形成を防止できる工業的に有用な
石英ガラスるつぼの製造方法を提供することを課題とす
る。
As a result of intensive studies on the above points, the present inventors found that most of the above-mentioned microbubble aggregates were generated.
It was clarified that the silicon dioxide evaporated in the initial stage of energization of the graphite electrode is cooled and agglomerated at the upper part of the graphite electrode in the initial low temperature state and formed by dropping. It has been found that the above problem can be solved by preheating the electrode in a predetermined temperature range. Therefore, it is an object of the present invention to provide an industrially useful method for producing a quartz glass crucible that can prevent the formation of microbubble aggregates in the crucible.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するため
に、本発明の石英ガラスるつぼの製造方法では、上部が
開口した型に予め充填された二酸化ケイ素を溶融する
際、熱源となるグラファイト電極を不活性ガス雰囲気下
で800℃以上に予熱してから、型内にセットし、通電
するという技術的手段を講じている。グラファイト電極
の予熱温度は、800℃以上、好ましくは1000℃以
上が良い。800℃未満では、十分な効果が得られず、
また、上限は周辺の機器に対する影響を考慮に入れると
2000〜3000℃が好ましい。
In order to solve the above-mentioned problems, in the method for manufacturing a quartz glass crucible of the present invention, a graphite electrode serving as a heat source when melting silicon dioxide previously filled in a mold having an open upper part Is preheated to 800 ° C. or higher in an inert gas atmosphere, then set in a mold and energized. The preheating temperature of the graphite electrode is 800 ° C or higher, preferably 1000 ° C or higher. If the temperature is lower than 800 ° C, a sufficient effect cannot be obtained,
Further, the upper limit is preferably 2000 to 3000 ° C. in consideration of the influence on peripheral devices.

【0006】上記グラファイト電極の予熱は、原料の充
填工程等の待機中に行われ、専用の加熱装置で行われ
る。このような加熱装置としては、グラファイト電極を
覆うように形成されたグラファイト、セラミック等の耐
熱性の保温体で形成し、保温体の内部に加熱体が設けら
れた構成のものが好ましく、また加熱は、不活性ガス雰
囲気下で行う必要がある。これにより電極および加熱装
置の酸化消耗を防止することができる。上記加熱体とし
ては、ニクロム線、カンタル線等の金属製や、グラファ
イト製等が使用できる。また、加熱時に使用される不活
性ガスとしては、例えば、窒素ガス、アルゴンガス等が
挙げられるが、取扱いが容易で安価であるという点で、
窒素ガスが好ましい。
The graphite electrode is preheated while waiting for the raw material filling step and the like, and is performed by a dedicated heating device. As such a heating device, it is preferable that the heating device is formed of a heat-resistant heat retaining body such as graphite or ceramic formed so as to cover the graphite electrode, and the heating body is provided inside the heat retaining body. Must be performed under an inert gas atmosphere. This makes it possible to prevent the electrodes and the heating device from being consumed by oxidation. The heating element may be made of metal such as Nichrome wire or Kanthal wire, or graphite. Further, as the inert gas used at the time of heating, for example, nitrogen gas, argon gas and the like can be mentioned, but in terms of easy handling and low cost,
Nitrogen gas is preferred.

【0007】[0007]

【発明の実施の形態】本発明の石英ガラスるつぼの製造
方法を、図1〜2に基づいて説明する。図1は、本発明
の製造方法を示した模式的断面図であり、図2は、本発
明の製造方法で使用されるグラファイト電極の予熱装置
の一例を示す斜視図である。図1で示すように、本発明
の石英ガラスるつぼの製造方法は、上部が開口した型1
の内周面に沿って二酸化ケイ素粉末充填層2を形成し、
図2に示す予熱装置を用いて予め800℃に加熱したグ
ラファイト電極3を型1の内部にセットした後、型1を
回転させながらグラファイト電極3に通電し、電極3,
3間に生ずるアーク放電により上記充填層2を加熱溶融
して石英ガラスるつぼを成形する。グラファイト電極3
は、予め全体が加熱され高温状態となっているため、充
填層2の溶融初期において蒸発した二酸化ケイ素がグラ
ファイト電極に触れても凝集することはない。
BEST MODE FOR CARRYING OUT THE INVENTION A method for manufacturing a quartz glass crucible of the present invention will be described with reference to FIGS. FIG. 1 is a schematic sectional view showing a manufacturing method of the present invention, and FIG. 2 is a perspective view showing an example of a graphite electrode preheating device used in the manufacturing method of the present invention. As shown in FIG. 1, the method for producing a quartz glass crucible of the present invention is a mold 1 having an upper opening.
Forming a silicon dioxide powder filling layer 2 along the inner peripheral surface of
After setting the graphite electrode 3 preheated to 800 ° C. in the mold 1 using the preheating device shown in FIG. 2, the graphite electrode 3 is energized while the mold 1 is rotated, and the electrode 3,
The filling layer 2 is heated and melted by an arc discharge generated between 3 to form a quartz glass crucible. Graphite electrode 3
In the above, since the whole is heated in advance to a high temperature state, silicon dioxide evaporated in the initial stage of melting of the filling layer 2 does not aggregate even if it touches the graphite electrode.

【0008】上記グラファイト電極の予熱に使用される
予熱装置4は、図2に示すように、グラファイト製の保
温体5からなり、グラファイト電極3を覆うような円筒
形状の割型に形成されている。また、その内部には、ニ
クロム線からなる加熱体6が内壁面に取り付けられ、そ
の上面には、窒素等の不活性ガスの導入口7が形成され
ている。予熱装置4内に入れられたグラファイト電極3
は、導入口7から送られた窒素ガス等の不活性ガスの雰
囲気下で、加熱体6により800℃以上に加熱される。
なお、図2の予熱装置は、円筒形状のものを示したが、
使用するグラファイト電極に合わせ、適宜変更して形成
すると良い。
As shown in FIG. 2, the preheating device 4 used for preheating the graphite electrode is composed of a graphite heat retaining body 5 and is formed in a cylindrical split mold so as to cover the graphite electrode 3. . In addition, a heating body 6 made of a nichrome wire is attached to the inner wall surface inside thereof, and an inlet 7 for an inert gas such as nitrogen is formed on the upper surface thereof. Graphite electrode 3 placed in preheater 4
Is heated to 800 ° C. or higher by the heating body 6 in an atmosphere of an inert gas such as nitrogen gas sent from the inlet 7.
Although the preheating device in FIG. 2 has a cylindrical shape,
It may be formed by appropriately changing it according to the graphite electrode used.

【0009】本発明の石英ガラスるつぼの製造方法によ
れば、グラファイト電極への通電の初期段階において、
型の内周面に充填・形成された充填層からの二酸化ケイ
素の蒸発成分は、グラファイト電極に凝縮・堆積するこ
となく、上部開口型の外部へと排気されるので、ガラス
内表面近傍の微小泡集合体を著しく減少させることがで
きる。それ故、石英ガラスるつぼの収率はもちろん、シ
リコン単結晶製造時にシリコンメルトおよびインゴット
に微小泡が混入することなく生産性の向上が図れる。
According to the method for producing a quartz glass crucible of the present invention, in the initial stage of energizing the graphite electrode,
Evaporation components of silicon dioxide from the filling layer filled / formed on the inner surface of the mold are exhausted to the outside of the upper opening mold without condensing / accumulating on the graphite electrode, so that minute amounts near the inner surface of the glass Foam aggregates can be significantly reduced. Therefore, not only the yield of the quartz glass crucible but also the productivity can be improved without mixing fine bubbles in the silicon melt and the ingot during the production of the silicon single crystal.

【0010】[0010]

【実施例】以下に実施例に基づいて具体的に説明する
が、本発明はこれに限定されるものではない。 [実施例1]型内の二酸化ケイ素充填層の加熱溶融前
に、予め約1,000℃に加熱された図2に示す予熱装
置内にグラファイト電極を入れ、窒素流量1m3 /mi
nの雰囲気下で10分間加熱した。取り出したグラファ
イト電極の表面は、約800℃になっていた。これを、
直ちに図1に示すような上部開口型1内にセットし、型
1を回転させながら、グラファイト電極3,3に通電し
放電して、型の内周面に充填・成形した二酸化ケイ素粉
末充填層2を2,000℃で加熱溶融し、直径22イン
チの石英ガラスるつぼを製造した。得られた石英ガラス
るつぼの内表面に生じた微小泡集合体の数を計測し、そ
の結果を表1に示した。ここに、微小泡集合体とは、1
cm2 あたり直径1mm以上の泡が10個以上凝集して
いるものをいう。
EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples. [Example 1] Before heating and melting the silicon dioxide filling layer in the mold, a graphite electrode was placed in the preheating device shown in Fig. 2 which was previously heated to about 1,000 ° C, and the nitrogen flow rate was 1 m 3 / mi.
n atmosphere for 10 minutes. The surface of the taken out graphite electrode was about 800 ° C. this,
Immediately after setting in the upper opening mold 1 as shown in FIG. 1, while rotating the mold 1, the graphite electrodes 3, 3 were energized and discharged to fill and mold the silicon dioxide powder packed layer on the inner peripheral surface of the mold. 2 was heated and melted at 2,000 ° C. to produce a quartz glass crucible having a diameter of 22 inches. The number of microbubble aggregates formed on the inner surface of the obtained quartz glass crucible was measured, and the results are shown in Table 1. Here, the microbubble aggregate is 1
It means that 10 or more bubbles having a diameter of 1 mm or more are aggregated per cm 2 .

【0011】[比較例1]比較のために、実施例1と同
じく、図2に示す装置を用いて、実施例1と同じ条件で
グラファイト電極を600℃まで予備加熱し、これを用
いて実施例1と同じ型に充填・成型した二酸化ケイ素粉
末充填層を加熱溶融し、石英ガラスるつぼを成形した。
この石英ガラスるつぼの内表面に生じた微小泡集合体の
発生頻度を計測し、その結果を表1に示した。
[Comparative Example 1] For comparison, a graphite electrode was preheated to 600 ° C. under the same conditions as in Example 1, using the apparatus shown in FIG. A silicon dioxide powder packed layer filled and molded in the same mold as in Example 1 was heated and melted to mold a quartz glass crucible.
The frequency of occurrence of microbubble aggregates generated on the inner surface of this quartz glass crucible was measured, and the results are shown in Table 1.

【0012】[比較例2]実施例1と同じく、図2に示
す装置を用いて、予備加熱しないで実施例1と同じ型に
充填・成型した二酸化ケイ素粉末充填層を加熱溶融し
て、石英ガラスるつぼを成形した。得られた石英ガラス
るつぼの内表面に生じた微小泡集合体の発生頻度を計測
し、その結果を表1に示した。
[Comparative Example 2] As in Example 1, the apparatus shown in FIG. 2 was used to heat and melt a silicon dioxide powder filling layer filled and molded in the same mold as in Example 1 without preheating to obtain quartz. A glass crucible was molded. The frequency of occurrence of microbubble aggregates generated on the inner surface of the obtained quartz glass crucible was measured, and the results are shown in Table 1.

【0013】[0013]

【表1】 なお、表中の実施例1、比較例1及び比較例2の微小泡
集合体の発生頻度を表す数値は、比較例2を100とし
た相対値である。表1から明らかなように、予めグラフ
ァイト電極を800℃に予備加熱した場合には、微小泡
集合体の発生頻度数は、比較例1、2に比べ極めて少な
いことが認められる。
[Table 1] The numerical values showing the frequency of occurrence of the microbubble aggregates of Example 1, Comparative Example 1 and Comparative Example 2 in the table are relative values with Comparative Example 2 as 100. As is clear from Table 1, when the graphite electrode is preheated to 800 ° C. in advance, the number of microbubble aggregates generated is extremely smaller than in Comparative Examples 1 and 2.

【0014】[0014]

【発明の効果】本発明の方法によって製造された石英ガ
ラスるつぼは、その内側に生ずる微小泡集合体が極めて
少ないため、単結晶製造においても、シリコンメルト中
に石英ガラス片などの混入を減少させることができるの
で、生産性の向上が図れる。
Since the quartz glass crucible produced by the method of the present invention has very few fine bubble aggregates formed inside, the quartz glass crucible reduces the inclusion of quartz glass fragments in the silicon melt even in the production of a single crystal. Therefore, productivity can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の製造方法を示した模式的断面図であ
る。
FIG. 1 is a schematic cross-sectional view showing a manufacturing method of the present invention.

【図2】 本発明の製造方法で使用されるグラファイト
電極の予熱装置の一例を示す斜視図である。
FIG. 2 is a perspective view showing an example of a graphite electrode preheating device used in the manufacturing method of the present invention.

【符号の説明】[Explanation of symbols]

1 型 5 保温体 2 二酸化ケイ素粉末充填層 6 加熱体 3 グラファイト電極 7 導入口 4 加熱装置 1 type 5 heat retaining body 2 silicon dioxide powder packed layer 6 heating body 3 graphite electrode 7 inlet 4 heating device

───────────────────────────────────────────────────── フロントページの続き (72)発明者 松村 光男 福井県武生市北府2丁目13番60号 信越石 英株式会社武生工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mitsuo Matsumura 2-13-60 Kitafu, Takefu City, Fukui Prefecture Shin-Etsuishi Ei Takefu Factory Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 上部が開口した型の内周面に沿って二酸
化ケイ素粉末の充填層を形成した後、グラファイト電極
を型の内部にセットし、型を回転させながらアーク放電
により前記充填層を加熱溶融して石英ガラスるつぼを製
造するにあたり、グラファイト電極を、不活性ガス雰囲
気下で800℃以上の温度で予熱してから、型内にセッ
トして通電し発熱させることを特徴とする石英ガラスる
つぼの製造方法。
1. A filling layer of silicon dioxide powder is formed along an inner peripheral surface of a mold having an open top, a graphite electrode is set inside the mold, and the filling layer is formed by arc discharge while rotating the mold. In manufacturing a quartz glass crucible by heating and melting, the graphite electrode is preheated at a temperature of 800 ° C. or more in an inert gas atmosphere, and then set in a mold to generate electricity by heating. Crucible manufacturing method.
JP10504696A 1996-04-25 1996-04-25 Manufacturing method of quartz glass crucible Expired - Lifetime JP3699778B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10504696A JP3699778B2 (en) 1996-04-25 1996-04-25 Manufacturing method of quartz glass crucible

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10504696A JP3699778B2 (en) 1996-04-25 1996-04-25 Manufacturing method of quartz glass crucible

Publications (2)

Publication Number Publication Date
JPH09286691A true JPH09286691A (en) 1997-11-04
JP3699778B2 JP3699778B2 (en) 2005-09-28

Family

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Country Status (1)

Country Link
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* Cited by examiner, † Cited by third party
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JP2011093782A (en) * 2009-10-02 2011-05-12 Japan Siper Quarts Corp Apparatus and method for manufacturing vitreous silica crucible
CN114230139A (en) * 2021-12-28 2022-03-25 宁夏盾源聚芯半导体科技股份有限公司 Preparation device and method for improving quality of quartz crucible

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011093782A (en) * 2009-10-02 2011-05-12 Japan Siper Quarts Corp Apparatus and method for manufacturing vitreous silica crucible
CN114230139A (en) * 2021-12-28 2022-03-25 宁夏盾源聚芯半导体科技股份有限公司 Preparation device and method for improving quality of quartz crucible
CN114230139B (en) * 2021-12-28 2024-03-29 宁夏盾源聚芯半导体科技股份有限公司 Preparation device and method for improving quality of quartz crucible

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