JPH09283598A - Vacuum pincette - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum pincette capable of easily and perfectly removing the static electricity on a semiconductor substrate dried by the spin drying, resulting in an effective suppression of particles from depositing on the surface of the dried semiconductor substrate, thereby providing a high-quality semiconductor substrate. SOLUTION: This pincette comprises a tube 4 connectable to a vacuum pump, a suction pipe 2 connected to the tube 4, and a suction chip 1 which is connected to the suction pipe 2 and capable of being vacuum-sucked to the back face of a semiconductor substrate. A high-conductivity non-thermal diffusion metal piece connected to a ground line is fixed to the suction face of the chip 1 of the pincette.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to vacuum tweezers. More specifically, the present invention relates to a vacuum tweezer which is capable of gripping and transporting a dried semiconductor substrate by vacuum suction when individually mounting the polished and dried semiconductor substrate in a clean predetermined container.

[0002]

2. Description of the Related Art In recent years, there have been truly remarkable advances in the development and performance improvement of electronic devices such as ICs and LSIs.

With the development of such ICs and LSIs and the improvement in performance thereof, circuits formed on a semiconductor substrate are becoming more and more miniaturized.

The most obstacle to miniaturization of the circuit formed on the semiconductor substrate is the problem of how to reduce the particles adhering to the semiconductor substrate.

Generally, in a semiconductor substrate, at least the element forming surface is polished to a mirror surface, and then the polished surface is cleaned to remove particles and residual impurities on the surface, and then the cleaned semiconductor substrate is dried. Finally, the dried semiconductor substrate is individually mounted in a clean predetermined container.

When the dried semiconductor substrates are individually packaged in a clean predetermined container, it is not permitted in terms of pollution prevention for the operator to manually package the dried semiconductor substrates by hand. The semiconductor substrate is sucked in vacuum with clean vacuum tweezers, and then it is individually packaged in a storage container.

The following two methods are widely used as the method for drying the semiconductor substrate.

(1) Vapor Drying Method Using Organic Solvent In the vapor drying method using an organic solvent, the organic solvent vapor is condensed on the surface of the cleaned semiconductor substrate, and the condensed organic solvent removes the moisture on the surface of the semiconductor substrate. It is designed to be displaced and then dried by evaporating the displaced condensed organic solvent.

In the vapor drying method using this organic solvent, the organic solvent inevitably condenses on the surface of the semiconductor substrate.
There is a concern that the organic solvent used and the trace components mixed in the organic solvent may remain.

Further, in the vapor drying method using this organic solvent, since the organic solvent used is replaced with the water on the surface of the semiconductor substrate, the water on the surface of the semiconductor substrate causes the organic solvent to vaporize. There is a concern that the amount of water in the inside becomes large, and as a result, the replacement with the water on the surface of the semiconductor substrate may not be completely performed, or uneven drying may occur.

(2) Spin Drying Method The spin drying method is a method of removing water on the surface by rotating a washed semiconductor substrate at high speed in vacuum or the like.

Since the spin drying method mechanically removes water, there is less concern about impurities remaining on the surface of the semiconductor substrate as compared with the vapor drying method using an organic solvent.

For this reason, the spin drying method is widely used as a method for drying an epitaxial growth substrate which is extremely reluctant to retain particles and the like.

However, the semiconductor substrate dried by the spin drying method is charged by friction with air due to high-speed rotation, and as a result, a minute amount and a minute amount of particles floating in the clean room adhere to the surface of the dried semiconductor substrate. There were difficulties.

For this reason, it has been attempted to install a static eliminating device near the air inlet of the spin drying device, but it is difficult to completely eliminate static electricity of the semiconductor substrate dried by the spin drying method. Met.

[0016]

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object thereof is to solve the above-mentioned drawbacks of the prior art and to provide a semiconductor substrate dried by a spin drying method. To provide vacuum tweezers capable of easily and completely removing static electricity and, as a result, effectively preventing particles from adhering to the surface of a dried semiconductor substrate, thereby providing a high quality semiconductor substrate. is there.

[0017]

SUMMARY OF THE INVENTION A gist of the present invention is to provide a tube that can be connected to a vacuum pump, a suction pipe connected to the tube, and a vacuum on the back surface of the semiconductor substrate that is connected to the suction pipe. A vacuum tweezer comprising a suction tip capable of suctioning, characterized in that a high conductivity / corrosion resistant metal piece connected to a ground wire is fixed to the suction surface side of the suction tip of the vacuum tweezer. It is in vacuum tweezers.

In the present invention, the high conductivity / non-heat diffusible metal piece has a conductivity of 50% or more and a small heat diffusivity on the semiconductor substrate, such as gold piece, silver piece, platinum piece, chromium piece, Examples are nickel pieces, alloy iron pieces, aluminum pieces, alloy aluminum pieces, and the like.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Next, an embodiment of the vacuum tweezers of the present invention will be described.

FIG. 1 is a plan view showing an embodiment of the vacuum tweezers of the present invention, and FIG. 2 is a side sectional view of the main part of FIG.
FIG. 3 is an AA enlarged cross-sectional view of FIG.

1 to 3, 1 is a suction tip, 2 is a suction pipe, 3 is a gripping portion, 4 is a tube, 5 is an aluminum piece, 6 is a leaf spring, 7 is a grounding conductor, and 9 is a suction port. is there.

That is, one embodiment of the vacuum tweezers of the present invention is a suction tip 1 made of polyethyl ether ketone, a suction tube 2, a grip portion 3, a tube 4, an aluminum piece 5, a leaf spring 6, a grounding wire 7, and suction. It is composed of a mouth 9.

As can be seen from FIG. 3, the aluminum piece 5
The leaf spring 6 and the leaf spring 6 are electrodeposited at a central point, and the integrated metal piece and grounding conductor 7 are fitted in the groove formed in the adsorption chip 1.

The aluminum piece 5 is slightly protruded from the suction surface of the suction chip 1 by the spring force of the leaf spring 6 when the semiconductor substrate is not suctioned, that is, when the semiconductor substrate is suctioned, the suction piece 1 is vacuumed by the vacuum force. It is designed to be flush with the suction surface of.

On the other hand, the grounding conductor 7 is the suction tip 1
It is completely housed in the groove portion formed in 1. Therefore, the grounding conductor 7 is arranged inside the substrate suction surface for sucking the semiconductor substrate.

FIG. 4 is a side sectional explanatory view of a main part showing a state when a semiconductor substrate is sucked by one embodiment of the vacuum tweezers of the present invention shown in FIGS.

In the symbols of FIG. 4, 1 to 7 and 9 are shown in FIG.
Same as 3. In FIG. 4, reference numeral 8 is a semiconductor substrate that has been adsorbed.

As can be seen from FIG. 4, the aluminum piece 5 of the vacuum tweezers is in complete electrical contact with the back surface of the semiconductor substrate 8, and the aluminum piece 5 of the vacuum tweezers and the back surface of the semiconductor substrate 8 are in contact with each other. Due to the electrical contact, the static electricity charged on the semiconductor substrate 8 flows from the aluminum piece 5 of the vacuum tweezers to the grounding conductor 7 to the ground not shown.

(Results of Static Electricity Measurement) Static electricity was measured with a voltmeter for the semiconductor substrate 8 immediately after spin drying and the semiconductor substrate 8 adsorbed by one embodiment of the vacuum tweezers of the present invention.

(Amount of Increase in Particles) The semiconductor substrate 8 immediately after spin-drying and the semiconductor substrate 8 adsorbed according to one embodiment of the vacuum tweezers of the present invention are not fixed and left in a clean room other than a clean bench for one day. Then, the number of particles having a particle diameter of 0.5 μm or more was counted.

Table 1 shows the results of these measurements.

[0032]

[Table 1]

As can be seen from Table 1, the static electricity of the semiconductor substrate 8 immediately after spin drying was as high as 2,500 V, and as a result, the number of particles was as large as 86 particles.

On the other hand, the static electricity of the semiconductor substrate 8 adsorbed by the vacuum tweezers of the present invention was 0 V, and the static electricity could be remarkably removed, and as a result, the number of particles was 13 which was extremely small.

[0035]

According to the vacuum tweezers of the present invention, when a spin-dried semiconductor substrate is individually packaged in a clean predetermined container, the back surface of the spin-dried semiconductor substrate is adsorbed and transferred to easily generate static electricity. Since it can be completely removed, the amount of particles adhering to the semiconductor substrate can be remarkably reduced, and the quality and yield of electronic devices can be improved, which is industrially useful.

[Brief description of drawings]

FIG. 1 is a plan view showing an embodiment of vacuum tweezers of the present invention.

FIG. 2 is a side sectional view of a main part of FIG.

FIG. 3 is an enlarged cross-sectional view taken along the line AA of FIG.

FIG. 4 is a side cross-sectional explanatory view of a main part of vacuum tweezers showing a state when a semiconductor substrate is sucked by an embodiment of the vacuum tweezers of the present invention.

[Explanation of symbols]

 1 suction tip 2 suction pipe 3 gripping part 4 tube 5 aluminum piece 6 leaf spring 7 grounding conductor 8 semiconductor substrate 9 suction port

Claims (5)

[Claims] 1. A vacuum comprising a tube connectable to a vacuum pump, a suction pipe connected to the tube, and a suction chip connected to the suction pipe and capable of vacuum suctioning the back surface of a semiconductor substrate. In the tweezers, a high conductivity / non-thermal diffusive metal piece connected to a ground wire is fixed to the suction surface side of the suction tip of the vacuum tweezers. 2. The vacuum tweezers according to claim 1, wherein the high-conductivity / corrosion-resistant metal piece is fitted in a groove portion opened on the suction surface side of the suction tip. 3. A high-conductivity / non-heat-diffusing metal piece and a leaf spring are fixedly integrated with each other at one central point, and are integrated at this one central point. When the leaf spring is fitted in the groove opened on the attraction surface side of the attraction chip, and the high conductivity / corrosion resistant metal piece does not attract the semiconductor substrate, the attraction force of the attraction chip is applied by the spring force of the leaf spring. The vacuum tweezers according to claim 1, wherein the vacuum tweezers are configured to be slightly protruded and to be flush with a suction surface of the suction chip when the semiconductor substrate is suctioned. 4. The vacuum tweezers according to claim 1, wherein the grounding conductor is buried lower than the suction surface. 5. A high conductivity / non-thermal diffusive metal piece selected from a gold piece, a silver piece, a platinum piece, a chromium piece, a nickel piece, an alloy iron piece, an aluminum piece, and an alloy aluminum piece.
The vacuum forceps according to claim 1, which is a seed.