JPH09283549A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To avoid exposing a part of sealed members such as wires on the package surface. SOLUTION: This device comprises a sealed resin body formed by transfer molding, consisting of support plate which is disposed in the resin body and supported with support leads, leads which are directed to the periphery of the support plate 4 at one side and extending to the outside of the resin body at the other side, one or more semiconductor chips fixed to a main face of the plate 4 and wires 7 electrically connecting the electrodes of the chips 6 to the leads 3. Height regulators 10, 11 are formed at least one by one on the main and back faces of the plate 4 or on the back face of the plate and main face of the chip 6 and have parts nearly flush with the surface of the sealed body. The regulators are insulators and cover the roots of the wires.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device (hybrid integrated circuit device) and a method for manufacturing the same, and particularly to a wire, a support plate and a wiring on the front surface (main surface and back surface) of a sealing body in a resin-sealed semiconductor device. The present invention relates to a technique effectively applied to a transfer molding technique that does not expose a portion of an object to be sealed such as a substrate.

[0002]

2. Description of the Related Art In semiconductor devices such as ICs (integrated circuit devices), a resin (resin) sealing structure is known as a package structure for covering semiconductor chips and the like.

The resin-sealed semiconductor device is manufactured using a lead frame. The lead frame is formed by patterning a thin metal plate by etching or precision press. Explaining an example of the lead frame, the lead frame includes a rectangular frame body, a support plate positioned in the center of the frame body, and supported by two or four support leads extending from the frame body, It is composed of a plurality of leads extending from the frame body and having their tips close to the periphery of the support plate, and a dam for connecting the leads and the frame body and for preventing the melted resin from flowing out at the time of transfer molding.

In manufacturing a resin-sealed semiconductor device,
First, the semiconductor chip is fixed to the main surface of the support plate. After that, the electrodes of the semiconductor chip and the tips of the leads are connected by a conductive wire. Next, after the lead frame is clamped in the mold of the transfer molding apparatus, the melted resin is injected into the cavity of the mold to cover the semiconductor chip, wires, etc. with the sealing body (package). After the transfer molding, unnecessary lead frame portions are cut and removed, and the leads protruding from the package are molded into a desired shape to manufacture a desired semiconductor device.

Semiconductor devices have been made thinner by making the package thinner. TQFP (Thin Quad) with resin package thickness as thin as 1mm
FlatPackage) is described in, for example, “Nikkei Microdevice”, September 1988 issue, published by Nikkei BP, September 115, pp. 115-P121. In this document, the die pad is displaced by the difference in the resin flow on the chip and under the die pad, and the wire height is 200 μm.
It describes that it is suppressed to m or less, and measures against short circuit due to wire deformation during molding.

On the other hand, as described in P13 and P14, "Latest Hybrid Mounting Technology" issued by the Industrial Research Institute, May 13, 1988, a transfer mold type in which a lead frame is used and sealing is performed by transfer molding. A hybrid IC (hybrid integrated circuit device) is known.

Further, in Japanese Patent Application No. 6-273202, at the time of transfer molding, a support plate is clamped by a protrusion provided on the upper and lower molds (clamp) so that the support plate does not move up and down by an inflowing resin. The manufacturing technique of the hybrid integrated circuit device in which the wire is not exposed on the surface of the package is described. In addition, in this technology, the support plate has a frame shape, and the heat dissipation plate is fixed to the back surface (lower surface) of the support plate, and the bottom surface of the heat dissipation plate is closely adhered to the bottom surface of the cavity of the mold during clamping during molding. It is described that the resin is molded so as not to go around the lower surface (back surface) of the heat dissipation plate.

[0008]

As described in the above document, during transfer molding in the manufacture of a resin-sealed semiconductor device, the support plate fluctuates vertically due to the inflow pressure of the resin flowing into the cavity. It may tilt or tilt. In this case, a phenomenon may occur in which a part of the support plate or the wire is exposed on the surface of the package.

There is also a case where the wire is deformed by the inflow pressure of the resin and a short circuit occurs between adjacent wires.

Particularly in the present situation where the sealing body is becoming thinner, partial exposure of the wire may pose a serious problem.

An object of the present invention is to provide a semiconductor device excellent in moisture resistance in which parts of an object to be sealed such as wires and supporting plates are not exposed on the package surface, and a method of manufacturing the same.

[0012] The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0013]

The following is a brief description of an outline of typical inventions disclosed in the present application.

(1) A sealing body made of resin formed by transfer molding, a support plate located in the sealing body and supported by a support lead, and one end of which faces the periphery of the support plate and the other end. A plurality of leads that extend outside the sealing body, one or more semiconductor chips fixed to the main surface of the support plate, and a wire that electrically connects the electrodes of the semiconductor chip and the leads. In the semiconductor device having the above, one or more height defining members each having a surface, a part of which is substantially flush with the front surface of the sealing body, are provided on the back surface of the support plate and the main surface of the semiconductor chip. Has been. The height defining body is an insulator. The height defining body covers the root portion of the wire.

Such a semiconductor device is manufactured by the following method.

The assembled lead frame is clamped in the mold of the transfer mold apparatus, and then resin is injected into the cavity of the mold to form a sealing body covering the main surface and the back surface of the lead frame. A method of manufacturing a semiconductor device, comprising: contacting a bottom surface and a ceiling surface of the cavity during mold clamping so that a portion of an object to be sealed located in the cavity does not move up and down. A height defining body having a positioning surface is selectively provided on the main surface and the back surface of the portion to be sealed, and then transfer molding is performed.

Specifically, a step of preparing a lead frame having a support plate for fixing the semiconductor chip, a step of fixing the semiconductor chip to the main surface of the support plate, an electrode of the semiconductor chip and a lead of the lead frame. A step of connecting the ends with a conductive wire; and after clamping the lead frame in a mold of a transfer mold device, injecting a melted resin into the cavity of the mold to support the support plate, the semiconductor chip, A method of manufacturing a semiconductor device having a molding step of covering wires and the like with a sealing body, wherein the height defining body is formed on the back surface of the support plate and the main surface of the semiconductor chip before the molding step, After that, transfer molding is performed. The height defining body is formed by applying and curing an insulating resin of the same system as the resin forming the sealing body. The height defining body covers the root portion of the wire. The height defining bodies respectively provided on the main surface side and the back surface side of the lead frame are sandwiched between the lower mold and the upper mold at the time of semi-curing to be molded to have a predetermined thickness.

(2) A sealing body made of resin formed by transfer molding, a plurality of leads extending inside and outside the sealing body, and located inside the sealing body and on the back surface of the leads. A semiconductor device having a LOC (Lead On Chip) structure having a semiconductor chip fixed via an insulator and a wire electrically connecting the electrode of the semiconductor chip and the lead, the main surface of the semiconductor chip One or more height defining members each having a surface that is substantially flush with the front surface of the sealing body are provided on the back surface and the main surface of the lead. The height defining body is an insulator.
The height defining body covers the root portion of the wire.

Such a semiconductor device is manufactured by the following method.

A step of preparing a lead frame having a structure in which the semiconductor chip is fixed to the back surface of the lead via an insulator,
A step of fixing the semiconductor chip to the back surface of the lead of the lead frame via an insulator; a step of connecting the electrode of the semiconductor chip and a lead of the lead frame with a conductive wire; A method of manufacturing a semiconductor device, comprising: a mold step of, after mold clamping of a lead frame, injecting a melted resin into a cavity of the mold to cover the semiconductor chip, wires, etc. with a sealing body, Before the molding step, the height defining body is attached to the back surface of the semiconductor chip, the main surface of the semiconductor chip, and the main surfaces of the leads, and then transfer molding is performed. The height defining body is formed by applying and curing an insulating resin of the same system as the resin forming the sealing body. The height defining body covers the root portion of the wire. The height defining bodies respectively provided on the main surface side and the back surface side of the lead frame are sandwiched between the lower mold and the upper mold at the time of semi-curing to be molded to have a predetermined thickness.

(3) A sealing body made of a resin formed by transfer molding, a wiring board positioned in the sealing body and supported by support leads, and one end of which faces the circumference of the wiring board and the other end. A plurality of leads extending outside the encapsulant, one or more semiconductor chips and passive components fixed to the main surface of the wiring board, and a wire for electrically connecting desired electrodes and wirings. A semiconductor device having a hybrid integrated circuit device structure including: a main surface and a back surface of the wiring board, a main surface of the semiconductor chip, and a back surface of the support plate, and a part thereof is substantially the same as the front surface of the sealing body. One or more height defining bodies each having a surface are provided. The height defining body is an insulator. Further, the height defining body covers the root portion of the wire.

Such a semiconductor device is manufactured by the following method.

A step of preparing a lead frame to which a wiring board is fixed, a step of fixing a semiconductor chip or a passive component to the main surface of the wiring board, and a step of connecting predetermined electrodes and wirings with conductive wires. After the lead frame is clamped in the mold of the transfer mold device, melted resin is injected into the cavity of the mold to cover the wiring board, semiconductor chip, passive components, wires, etc. with a sealing body. A method of manufacturing a hybrid integrated circuit type semiconductor device comprising a molding step, wherein the height is defined on the main surface and the back surface of the wiring board, the main surface of the semiconductor chip, and the back surface of the support plate before the molding step. Attach the body and then transfer mold. The height defining body is formed by applying and curing an insulating resin of the same system as the resin forming the sealing body. The height defining body covers the root portion of the wire. The height defining bodies respectively provided on the main surface side and the back surface side of the lead frame are sandwiched between the lower mold and the upper mold at the time of semi-curing to be molded to have a predetermined thickness.

According to the means (1), (a) the back surface of the support plate of the lead frame before transfer molding,
A height defining body is attached to the main surface (upper surface) of the semiconductor chip fixed to the main surface of the support plate, and then transfer molding is performed. In the mold, the positioning surface of the height defining body on the back surface of the support plate contacts the bottom surface of the cavity, and the positioning surface of the height defining body on the main surface of the semiconductor chip contacts the cavity ceiling surface. Even if the resin melted into the substrate vigorously flows in, the supporting plate and the semiconductor chip do not move up and down because they contact the mold through the upper and lower height defining bodies. As a result, the lower and upper sides of the support plate, that is, even if the resin on the main surface side of the semiconductor chip is designed to be thin,
A part of the support plate and a part of the wire (wire loop) stretched between the semiconductor chip and the lead are not exposed on the surface of the sealing body.

(B) The height defining member is formed by applying and curing an insulating resin that is the same as the resin forming the sealing member, and is provided on the front and back surfaces of the lead frame, respectively. When the mold is clamped into the mold, the positioning surfaces of the upper and lower height regulators are located on the cavity bottom surface and the cavity ceiling surface, respectively, so that the regulator is sandwiched between the lower mold and the upper mold when it is semi-cured. The support plate and the semiconductor chip are securely held as they come into contact with each other.
Further, since the height defining body does not project beyond the bottom surface of the cavity or the ceiling surface of the cavity for a long time, the height defining body does not crush and damage the semiconductor chip.

(C) Since the height defining body covers the root portion of the wire, the wire is supported by the height defining body even if the melted resin flows into the cavity vigorously. For this reason, it becomes difficult to fall (deform), and it is possible to prevent the occurrence of short circuits between wires.

According to the above-mentioned means (2), as in the case of the above-mentioned means (1), it is possible to prevent the portion of the object to be sealed from being exposed by the action of the height defining member during transfer molding. That is, the LOC for fixing the lead to the main surface (upper surface) of the semiconductor chip via the insulator (insulating film).
Even in the case of a semiconductor device with a (Lead On Chip) structure, wire exposure, semiconductor chip exposure, and lead exposure can be prevented. Further, since the height defining body covers the root portion of the wire, even if the melted resin flows into the cavity vigorously, since the wire is supported by the height defining body, it collapses ( Deformation) becomes difficult, and it becomes difficult to cause a wire short circuit.

According to the above-mentioned means (3), as in the case of the above-mentioned means (1), the exposure of the portion to be sealed can be prevented by the action of the height defining member during transfer molding. That is, height defining bodies are provided not only on the main surface and the back surface of the wiring board to which the semiconductor chips and passive components are fixed, but also on the back surface of the support plate supporting the wiring board and the main surface of the semiconductor chip, and the like. Since the sealing body is formed by transfer molding, the height of the wiring board does not fluctuate during molding, and the wires, wiring board, support plate, etc. are not exposed on the surface of the sealing body. Further, since the height defining body covers the root portion of the wire, even if molten resin flows into the cavity vigorously, the wire is deformed because it is supported by the height defining body. It becomes difficult, and it becomes difficult for the short circuit of the wire to occur.

[0029]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In all the drawings for describing the embodiments of the present invention, components having the same functions are denoted by the same reference numerals, and their repeated description will be omitted.

(Embodiment 1) FIGS. 1 to 5 are views relating to a method of manufacturing a semiconductor device according to an embodiment (Embodiment 1) of the present invention. FIG. 1 is a schematic cross-sectional view showing a transfer mold state. 2 is a cross-sectional view showing a semiconductor device, FIG. 3 is a plan view showing a lead frame on which a semiconductor chip is fixed and wire bonding is performed, and FIG. 4 is a lead frame on which a semiconductor chip is fixed and wire bonding is performed. FIG. 5 is a partial cross-sectional view, and FIG. 5 is an enlarged cross-sectional view showing a height defining body portion provided on the front and back surfaces of the support plate.

As shown in FIG. 2, the semiconductor device 1 according to the first embodiment has a sealing body (package) 2 made of a resin (resin) that is flat in appearance, a peripheral surface of the package 2, and a package 4.
It is composed of a plurality of leads 3 protruding from the sides. For example, the thickness of the package 1 is about 1 mm.

The lead 3 extends inside and outside the package 2 and is of a gull wing type. A support plate 4 is located inside the package 2. The support plate 4 is also called a tab and is supported by a support lead (tab suspension lead) not shown in the figure.

A semiconductor chip 6 constituting an IC or the like is fixed to the main surface of the support plate 4, that is, the upper surface in the figure, with a bonding material 5 (see FIG. 5) interposed. Further, the electrodes (not shown) on the upper surface of the semiconductor chip 6 and the tips of the leads 3 extending inside the package 2 are electrically connected via a conductive wire 7.

Further, a plurality of height defining bodies 11 and height defining bodies 10 made of resin are provided on the main surface (upper surface in the drawing) side and the back surface side of the support plate 4. The support plate 4
The height defining member 10 on the back surface side of the support plate 4 defines the height of the back surface of the support plate 4 at the time of molding.
It is provided in the corner. One flat surface of the height defining body 10 serves as a positioning surface 12, which is flush with the back surface of the package 2.

Further, the height defining member 11 on the main surface side of the supporting plate 4
Defines the height of the main surface of the semiconductor chip 6 fixed to the main surface of the support plate 4 during molding, and is provided in the peripheral portion of the semiconductor chip 6 in the first embodiment. The height defining body 11 covers the base portion of the wire 7 fixed to an electrode (not shown) of the semiconductor chip 6.
Thereby, the wire 7 is covered with the height defining body 11,
As a result of being supported and protected, it will not fall or deform. That is, at the time of transfer molding in the manufacture of the semiconductor device 1, the wires 7 do not fall down and are not deformed by the inflowing resin, so that the wires 7 do not come into contact with each other or the wires are not close enough to each other to cause a short circuit.

One flat surface of the height defining body 11 serves as a positioning surface 13, which is flush with the main surface of the package 2.

Next, a method of manufacturing the semiconductor device according to the first embodiment will be described. In manufacturing the semiconductor device 1, a lead frame 15 is prepared as shown in FIG. The lead frame 15 is formed by patterning a metal plate having a thickness of about 0.15 mm and made of a Fe—Ni-based alloy, a Cu alloy, or the like by etching or precision pressing.

The lead frame 15 is a strip body in which a plurality of unit lead patterns are arranged in series in one direction. The unit lead pattern is a pair of outer frames 16 extending in parallel.
And a pair of inner frames 17 connecting the pair of outer frames 16 and extending in a direction orthogonal to the outer frame 16 are formed in a frame.

A rectangular support plate (tab) 4 for mounting a semiconductor chip is provided at the center of the frame. The support plate 4 has a support lead (tab suspension lead) 21 extending from a support piece 20 protruding at four corners of the frame.
Supported by.

Further, each outer frame 16 and inner frame 17 of the frame
A plurality of leads 3 extend from the inside to the center of the frame. The leads 3 are parallel to each other on each side of the frame, and have a pattern in which the tips are brought close to the periphery of the support plate 4. Further, on each side, the lead 3 is
The pattern intersects with a narrow dam 22 provided between the supporting pieces 20. Therefore, each lead 3
Will be supported on the way by the dam 22. The dam 22 functions as a dam that prevents the melted resin from flowing out during transfer molding described later. The cantilevered lead portion inside the dam 22 is generally called an inner lead, and the outer portion is called an outer lead.

The support lead 21 is bent in a one-step step shape on the way. As a result, the supporting plate 4 is lower than the lead 3 by one step (see FIG. 4).

The outer frame 16 has guide holes 25,
26 are provided. The guide holes 25 and 26 are used as guides for transferring and positioning the lead frame 15. It should be noted that the lead frame 15 is plated at a desired portion as needed.

Next, the lead frame 15 thus constructed is assembled. That is, as shown in FIGS. 3 and 4, the semiconductor chip 6 is fixed to the main surface of the support plate 4 via the bonding material 5 (see FIG. 5). Also,
Electrodes (not shown) of the semiconductor chip 6 and the corresponding tips of the leads 3 are electrically connected by a conductive wire 7.

In the first embodiment, an example in which one semiconductor chip 6 is fixed to the support plate 4 will be described, but a plurality of semiconductor chips may be used.

Next, height defining bodies 10 and 11 are formed on the back surface of the support plate 4 and the main surface of the semiconductor chip 6, respectively. The height defining bodies 10 and 11 are formed by partially applying and curing an insulating resin using a dispenser.

Since the package 2 is formed of a thermosetting epoxy resin, the height defining members 10 and 11 are also formed of a thermosetting epoxy resin.

The height defining bodies 10 and 11 are formed so that their tip surfaces are the same as or slightly protrude from the surface of the package 2.

The height defining members 10 and 11 do not move the support plate 4 and the semiconductor chip 6 up and down during transfer molding, so that the support plate 4 and the semiconductor chip 6 are rectangular.
It is desirable to provide it in the vicinity of. In the first embodiment, the height defining bodies 10 provided on the back surface of the support plate 4 are provided at the four corners of the rectangular support plate 4. However, even in the central portions of the support plate 4 and the semiconductor chip 6, as will be described later, when the areas of the positioning surfaces 12 and 13 of the height defining bodies 10 and 11 are large, the support plate 4 and the semiconductor chip 6 are It can be sufficiently supported, and it is possible to prevent the support plate 4 and the semiconductor chip 6 from vertically fluctuating and shaking.

Further, the height defining member 11 provided on the main surface of the semiconductor chip 6 has a root portion of the wire 7 fixed to the electrode of the semiconductor chip 6 as shown by two two-dot chain lines in FIG. It is provided so as to cover.

By providing the height defining body 11 so as to cover the base portion of the wire 7, the wire 7 is supported and protected by the height defining body 11 so that it is difficult to fall down, and it will not fall into the cavity during transfer molding described later. Even if the resin flows in vigorously, the resin will not easily fall down, the wires 7 will not come into contact with each other, and will not come close to each other, so that prevention of short circuit can be achieved.

In FIG. 4, the chain double-dashed line shows the cavity bottom surface 30 and the cavity ceiling surface 31 of the mold in the transfer mold, and the tips of the upper and lower height defining members 10 and 11 are the cavity bottom surface 30 or It slightly protrudes from the cavity ceiling surface 31.

Next, the height defining bodies 10 and 11 are semi-cured by natural drying or short-time baking.

Next, as shown in FIG. 5, the lower mold 32 and the upper mold 33 sandwich the height defining members 10 and 11 located on the main surface and the back surface side of the support plate 4, and the height of the back surface of the support plate 4 is increased. The thickness from the lower surface of the regulating body 10 to the upper surface of the height regulating body 11 is adjusted to a predetermined thickness, that is, the length from the cavity bottom surface of the mold to the cavity ceiling surface. By the sandwiching process by the lower mold 32 and the upper mold 33, the positioning bodies 12, 1 that are flat on the tips of the height defining bodies 10 and 11 are formed.
3 is formed.

The height defining body 10 provided on the back surface of the support plate 4 of the lead frame 15 may be provided before fixing the semiconductor chip 6. In this case, the height defining member 10 may be completely cured, that is, may be completely cured by baking or curing. in this case,
It can be supplied and sold as the lead frame 15 in which the height regulating body 10 is provided on the back surface of the support plate 4.

The height defining member 10 can also be formed by partially projecting the lead frame base material on the support plate 4 of the lead frame 15 by pressing such as coining. With this structure, in a precision press working for manufacturing a lead frame by sequentially punching a predetermined number of metal plates sequentially flowing on each line at each press station, it is only necessary to increase one station as a coining work. The cost can be reduced.

Next, the lead frame 15 is clamped to the mold 40 of the transfer molding apparatus, and the resin 44 melted into the cavity 43 is flown into the cavity 43 from the gate 45 to mold the support frame 4 and the semiconductor chip 6. , The wires 7, the tip portions of the leads 3 and the like are covered with the sealing body (package) 2. FIG. 1 is a partial cross-sectional view showing a state where the lead frame 15 which has been assembled between the lower die 41 and the upper die 42 of the mold die 40 is clamped.

The cavity 4 is formed by the lower mold 41 and the upper mold 42.
3 is formed. Further, a resin guide path such as a gate 45 for guiding the melted resin 44 is formed in the cavity 43. Further, although not shown, an air vent or the like that allows the air in the cavity 43 to escape to the outside is also formed.

Lead frame 15 assembled
As shown in FIG. 1, after positioning and placing on the lower mold 41 of the mold 40, the mold 40 is clamped, and the height defining body is sandwiched by the lower mold 41 and the upper mold 42. Since the height from the lower surface of 10 to the upper surface of the height defining body 11 is adjusted, the height defining body 10,
11 positioning surfaces 12 and 13 are cavities 43, respectively.
The cavity bottom surface 30 and the cavity ceiling surface 31 come into contact with each other without excess or deficiency. As a result, the support plate 4 and the semiconductor chip 6 can maintain a desired height in the cavity 43, and vertical fluctuation does not occur.

Therefore, even if the melted resin 44 is forcedly flown into the cavity 43 from the gate 45, the support plate 4 and the semiconductor chip 6 do not move up and down. Therefore, the defect that the support plate 4 is exposed on the back surface (lower surface) of the package 2 or the semiconductor chip 6 and some of the wires 7 are exposed on the main surface (upper surface) of the package 2 does not occur.

Further, the height defining member 11 provided on the main surface of the semiconductor chip 6 covers the base portion side of the wire 7 as shown in FIGS. The molten resin 44 flowing in does not cause the resin 7 to fall and fall, and the wires 7 do not come into contact with each other or come in close proximity to each other, so that a short circuit can be prevented.

In the first embodiment, since the height defining body 10 and the height defining body 11 are in a semi-cured state, they are deformed by the mold clamping pressure of the upper and lower molds in the transfer molding apparatus, and thus the mold There is no possibility that the semiconductor chip 6 will be damaged by the tightening pressure.

However, in the first embodiment, the height defining body 10 and the height defining body 11 may be sandwiched and completely cured. In this case, in the sandwiching process,
If the length from the lower surface of the height regulating body 10 to the upper surface of the height regulating body 11 is made lower than the length from the bottom surface of the cavity 43 to the ceiling surface by about ten and several μm, the height regulating body 11 will be interposed. As a result, the semiconductor chip 6 is not compressed, and there is no need to worry about damage due to the compression of the semiconductor chip 6. At this time, the length from the lower surface of the height defining body 10 to the upper surface of the height defining body 11 is shorter than the length from the bottom surface of the cavity 43 to the ceiling surface by about ten and several μm. Also, the semiconductor chip 6 can fluctuate up and down by a few tens of μm, but when the supporting plate 4 and the semiconductor chip 6 change up and down by about a dozen μm, the upper end portion of the loop of the wire 7 is exposed on the surface of the package 2. It is not as close to the surface of the package 2 as the moisture resistance is deteriorated.

The resin filled in the cavity 43 is
It is temporarily hardened by a temporary baking process.
Then, final cure is performed and the resin is completely cured. At this time, since the height defining bodies 10 and 11 are made of the same resin as the package 2, they are simultaneously cured when the package 2 is cured. Then, the interfaces between the height defining bodies 10 and 11 and the package 2 are in close contact with each other, and the moisture resistance is not impaired.

Next, unnecessary portions of the lead frame 15 are cut and removed. Further, the leads 3 projecting from the periphery of the package 2 are formed into a gull wing type. As a result, the semiconductor device 1 as shown in FIG. 2 is manufactured.

According to the method of manufacturing the semiconductor device of the first embodiment, since the support plate 4 and the semiconductor chip 6 do not fluctuate in the vertical direction or the like in the transfer mold, the package 2 is supported on the surface of the object to be sealed. The plate 4, the semiconductor chip 6, the wire 7, etc. are not exposed, and the yield of the mold can be improved.

Further, since the support plate 4, the semiconductor chip 6, the wire 7 and the like are not located near the surface of the package 2, the moisture resistance of the semiconductor device is improved.

According to the method of manufacturing the semiconductor device of the first embodiment, the wire 7 is covered with the height defining member 11 at the base portion thereof, so that the wire 7 is not washed by the melted resin 44 during transfer molding. Or wire 7
It is possible to prevent the mutual contact and the occurrence of the close proximity to each other. Therefore, not only the yield of the mold can be improved, but also the reliability of the manufactured semiconductor device is increased.

(Embodiment 2) FIG. 6 is a sectional view showing a semiconductor device having an LOC structure which is another embodiment (Embodiment 2) of the present invention.

As shown in FIG. 6, in the semiconductor device 1 having the LOC structure, an insulating film (insulator) is formed on the main surface (upper surface in the figure) of the semiconductor chip 6 in a sealing body (package) 2 made of resin. The tip portion of the lead 3 is fixed via 50. The first embodiment has a structure in which the leads 3 are projected on both sides of the package 2. The lead 3 has a J-bend structure.

The leads 3 are inserted into the package 2 from both sides of the package 2, and the tip portions of the leads 3 are fixed to the semiconductor chip 6 via the insulating film 50.

Electrodes (not shown) are provided along the center line of the semiconductor chip 6, and these electrodes and the tip portions of the leads 3 on both sides are electrically connected by a conductive wire 7.

In the semiconductor device 1 having such a LOC structure, the height defining member 10 is provided on the back surface (lower surface) of the semiconductor chip 6, and on the main surface (upper surface) of the lead 3 on the main surface side of the semiconductor chip 6. A height defining body 11 is provided. Further, the height defining bodies 10 and 11 are provided with positioning surfaces 12 and 13 as in the first embodiment. The positioning surfaces 12 and 13 are flush with the main surface and the back surface of the package 2, respectively.

Height regulating body 1 on the back surface of the semiconductor chip 6
0 defines the height of the back surface of the semiconductor chip 6, and is provided at the four corners of the semiconductor chip 6. Further, in order to define the height of the leads 3 extending on the main surface of the semiconductor chip 6, height defining bodies 11 are provided on the leads 3 corresponding to the four corners of the semiconductor chip 6.

A height defining member 11 is provided along the center line of the main surface of the semiconductor chip 6. Semiconductor chip 6
The height defining member 11 provided along the center line of the main surface of
The base of the wire 7 is covered to support and protect the wire 7 from falling.

The semiconductor device having the LOC structure of the second embodiment is manufactured by the following method.

A lead frame having a structure in which the semiconductor chip is fixed to the back surface of the lead via an insulator, that is, LOC.
Prepare a lead frame for Although not particularly shown, the lead frame has a structure in which a plurality of leads extend from the inside of the inner frame of the rectangular frame in parallel with the outer frame. The tip ends of the leads extending from the inner frames on both sides extend to a position spaced apart from the center line of the frame by a predetermined distance.
Further, each lead has a structure supported by a dam provided between the pair of outer frames.

In assembling the semiconductor device 1 having the LOC structure, the lead tip portions of the lead frame are insulated and fixed to the main surface of the semiconductor chip 6 via the double-sided adhesive type insulating film 50. Since the semiconductor chip 6 is provided with an electrode along the center line of the main surface, the semiconductor chip 6 is fixed so that the lead 3 does not hang on this portion.

Next, the central electrode (not shown) of the semiconductor chip 6 and the tip portion of the lead 3 are connected by a conductive wire 7 by a conventional wire bonding.

Next, the height defining body 10 and the height defining body 11 are formed on the main surface and the back surface of the semiconductor chip 6 and the main surface (upper surface) of the leads 3. The height regulating body 10, 1
1 is formed by the same method as in the first embodiment. That is, the insulating epoxy resin is partially applied using a dispenser and is semi-cured. On this occasion,
Increase the protruding height. After that, sandwiching is performed so that the length from the lower surface of the height defining body 10 to the upper surface of the height defining body 11 matches the height of the cavity.

The height defining bodies 10 on the back surface of the semiconductor chip 6 define the height of the back surface of the semiconductor chip 6, and are provided at the four corners of the semiconductor chip 6. Also,
In order to define the height of the leads 3 extending on the main surface of the semiconductor chip 6, height defining bodies 11 are provided on the leads 3 corresponding to the four corners of the semiconductor chip 6.

A height defining body 11 is provided along the center line of the main surface of the semiconductor chip 6. The height defining body 11 provided along the center line of the main surface of the semiconductor chip 6 covers the root portion of the wire 7. As a result, the wire 7 is supported and protected by the height defining member 11, and thus it is difficult for the wire 7 to fall down, and it is also difficult for the wire 7 to fall down due to the resin that flows into the cavity at the time of transfer molding, which will be described later. It is possible to prevent short circuit because it is not close to.

The back surface (lower surface) of the semiconductor chip 6
The height defining member 10 provided in the above may be provided in the state of the semiconductor chip 6.

Next, the assembled lead frame is clamped in the mold of the transfer molding apparatus and molded to form the package 2.

Then, after removing unnecessary lead frame portions by cutting, molding is performed to form the leads 3 protruding from the package 2 into a J-bend type. As a result, the semiconductor device 1 having the LOC structure shown in FIG. 6 is manufactured.

The semiconductor device 1 having the LOC structure according to the second embodiment.
In the manufacturing, since the height defining bodies 10 and 11 are provided on the main surface and the back surface of the support plate 4 and the main surface of the leads 3 and the transfer molding is performed thereafter, the semiconductor chip 6 and the leads 3 do not move up and down, and the package The parts to be sealed such as the semiconductor chip 6 and the wires 7 are exposed on the surface of the package 2 and are not close to the surface of the package 2. As a result, LOC
The manufacturing yield of the structured semiconductor device 1 is improved. Further, the sealed parts such as the semiconductor chip 6 and the wires 7 do not come close to the surface of the package 2, the moisture resistance is improved, and the reliability of the semiconductor device 1 having the LOC structure is increased.

The semiconductor device 1 having the LOC structure according to the second embodiment.
Since the root portion of the wire 7 is supported by the height defining member 11, the wire is not flowed by the resin that flows in at the time of transfer molding and is not deformed, so that a short circuit defect of the wire does not occur. Therefore, the manufacturing yield can be improved, and the reliability of the manufactured LOC structure semiconductor device 1 can be improved.

In the second embodiment, the LOC in which the leads 3 are fixed to the main surface of the semiconductor chip 6 via the insulating film 50.
An example in which the present invention is applied to the semiconductor device 1 having a structure has been described, but the same applies to a semiconductor device having a COL (Chip On Lead) structure in which a semiconductor chip is fixed to the main surface (upper surface) of the lead via an insulating film. This can be applied, and similarly, it is possible to prevent the exposed portion of the sealed object from being exposed to the package surface and prevent the wire from short-circuiting.

(Third Embodiment) FIG. 7 is a sectional view showing a semiconductor device having a hybrid integrated circuit structure according to another embodiment (third embodiment) of the present invention. FIG. It is a top view of the lead frame used.

The semiconductor device 1 of the third embodiment is manufactured by using the lead frame to which the wiring board is fixed.

As shown in FIG. 7, the semiconductor device 1 of the third embodiment is similar to the first embodiment in appearance. The package 2 is made of a rectangular flat resin and the periphery of the package 2. It is composed of a plurality of gull wing-type leads 3 protruding from. The thickness of the package 2 is thicker than that of the first embodiment, and is, for example, about 2 to 3 mm.

In the semiconductor device 1 of the third embodiment,
The support plate 4 embedded in the package 2 has a rectangular frame shape as shown in FIG. And this support plate 4
A rectangular wiring board 60 is fixed to the main surface of the substrate with a bonding material.

Although not shown, the wiring board 60 has wirings and electrodes (pads) provided on its main surface. For example, a fixing pad is provided in the portion where the semiconductor chip 6 is mounted. The passive component 6 such as a chip capacitor or a chip resistor is mounted on the portion where the passive component 61 is mounted.
A pad (electrode) to which one electrode is fixed is provided. Around the semiconductor chip 6, pads (electrodes) for wire bonding are provided. Further, pads (electrodes) for connecting the wires 7 connected to the leads 3 are provided in the peripheral portion of the wiring board 60.

FIG. 7 shows a state in which two semiconductor chips 6 and one passive component 61 are fixed to the main surface of the wiring board 60. Further, the electrodes of the semiconductor chip 6 and the wiring board 60.
Pads (or wirings) are electrically connected by conductive wires 7. Further, the pads on the peripheral portion of the wiring board 60 and the tips of the leads 3 extending into the package 2 are connected by a conductive wire 7.

Also in the third embodiment, the height defining member 10 and the height defining member 11 are provided on the main surface side and the back surface side of the wiring board 60 as in the first embodiment. The height defining bodies 10 and 11 are provided with positioning surfaces 12 and 13 as in the first embodiment. The positioning surfaces 12 and 13 are flush with the main surface and the back surface of the package 2, respectively.

Height regulating body 1 on the back side of the wiring board 60
0 defines the height of the back surface of the wiring board 60, and is provided at four corners of the wiring board 60. In this case, the height defining member 10 is partially provided over the support plate 4.

The height defining member 11 on the main surface side of the wiring board 60
Is for defining the height of the main surface of the wiring board 60, and is preferably provided in the peripheral portion of the wiring board 60. Further, it is desirable to support and protect the root portion of each wire 7 because it prevents the wire from falling over, as in the first embodiment. Therefore, in the third embodiment, the wiring board 60, the semiconductor chip 6, and the portion of the portion to which the wires 7 are connected are arranged.
A height defining body 11 is provided on each main surface portion of the lead 3. Since the height defining bodies 11 are scattered on the main surface side of the wiring board 60, fluctuations in the main surface of the wiring board 60 can be suppressed during transfer molding described later.

The semiconductor device 1 of the third embodiment is manufactured by the following method.

In manufacturing the semiconductor device 1, a lead frame with a wiring board as shown in FIG. 8 is prepared.

The lead frame 15 is the same as the lead frame of the first embodiment except that the support plate 4 has a frame shape. A rectangular wiring board 60 is fixed to the support plate 4 with a bonding material. Since the support plate 4 has a plurality of semiconductor chips and passive components mounted thereon, the support plate 4 has a larger size than that of the first embodiment.

Although not shown, the wiring board 60 is provided with wirings and electrodes (pads) on the main surface (upper surface) as described above. For example, a fixing pad is provided in a portion where the semiconductor chip 6 is mounted, and a pad (electrode) to which an electrode of the passive component 61 is fixed is provided in a portion where the passive component 61 such as a chip capacitor or a chip resistor is mounted. The
Pads (electrodes) for wire bonding are provided on the peripheral surface of the semiconductor chip 6, and pads (electrodes) for connecting the wires 7 connected to the leads 3 are provided on the peripheral portion of the wiring board 60. ing.

In assembling the semiconductor device 1, a plurality of semiconductor chips 6 and passive components 6 are formed on the main surface of the wiring board 60 of the lead frame 15 by a conventional bonding method.
1 is installed. FIG. 7 shows a state in which two semiconductor chips 6 and one passive component 61 are fixed to the main surface of the wiring board 60.

Next, the electrodes of the semiconductor chip 6 and the pads (or wirings) of the wiring board 60 are electrically connected by the conductive wires 7 by a conventional wire bonding method. Similarly, the pads on the peripheral portion of the wiring board 60 are connected to the tip portions of the leads 3 whose tips are brought close to the periphery of the wiring board 60 by the conductive wires 7.

Next, the height defining body 10 and the height defining body 11 are formed on the main surface side and the back surface side of the wiring board 60 by the same method as in the first embodiment. That is, partially apply the insulating epoxy resin using a dispenser,
And semi-cure. After that, the length from the lower surface of the height defining body 10 to the upper surface of the height defining body 11 by sandwiching is
Match the height of the cavity.

Height regulating member 1 on the back side of the wiring board 60
0 defines the height of the back surface of the wiring board 60, and is provided at four corners of the wiring board 60. In this case, the height defining member 10 is partially provided over the support plate 4.

The height defining member 11 on the main surface side of the wiring board 60
Is for defining the height of the main surface of the wiring board 60, and is preferably provided in the peripheral portion of the wiring board 60. Further, it is desirable to support and protect the root portion of each wire 7 because it prevents the wire from falling over, as in the first embodiment. Therefore, in the third embodiment, the wiring board 60, the semiconductor chip 6, and the portion of the portion to which the wires 7 are connected are arranged.
A height defining body 11 is provided on each main surface portion of the lead 3.
Since the height defining bodies 11 are scattered on the main surface side of the wiring board 60, fluctuations in the main surface of the wiring board 60 can be suppressed during transfer molding described later.

Next, the assembled lead frame 1
The mold 5 is clamped in the mold of the transfer mold device and molded to form the package 2. At this time, the positioning surfaces 12 and 13 of the height defining bodies 10 and 11 are
Since it contacts the cavity bottom surface or the cavity ceiling surface of the mold-type cavity, the wiring board 60 and the like do not fluctuate vertically due to the inflowing resin. As a result, a part of the support plate 4, the wiring board 60, the semiconductor chip 6, the passive component 61, the wire 7, etc., which is the portion to be sealed, is partially packaged.
Since it is not exposed to the surface of the semiconductor device 1 and is not close to the surface of the package 2, the mold yield can be improved and the moisture resistance of the semiconductor device 1 can be improved.

Next, after removing unnecessary lead frame portions by cutting, molding is performed to form the leads 3 protruding from the package 2 in a gull wing type. As a result, the semiconductor device 1 having the hybrid integrated circuit structure shown in FIG. 7 is manufactured.

In the semiconductor device 1 having the hybrid integrated circuit structure of the third embodiment, the part to be sealed is not exposed on the surface of the package 2 or the part to be sealed is not close to the surface of the package 2 and is reliable. The moisture resistance is improved as well as the moisture resistance.

Further, since the base of each wire 7 is covered and supported and protected by the height defining member 11, there is no deformation such that the wire falls over during transfer molding, short circuit can be prevented, and reliability is improved. It is possible to improve.

According to the method of manufacturing the semiconductor device having the hybrid integrated circuit structure of the third embodiment, the wiring board 60 does not move up and down and the wire 7 is not deformed during transfer molding. Defects can be prevented, and the production yield can be improved to reduce product cost.

In the third embodiment, since the support plate 4 has a rectangular frame shape, the back surface of the wiring board 60 is partially exposed. Therefore, a heat dissipation plate (heat spreader) may be provided on this exposed portion. The heat dissipation plate is formed of a metal having good thermal conductivity such as copper. The back surface of the heat sink is exposed on the back surface of the package 2.

In this case, the height defining member 10 on the back surface side of the wiring board 60 is provided on the back surface of the support plate 4. In the case of this embodiment, since the wiring substrate 60 does not move up and down during transfer molding, the resin does not adhere to the exposed back surface of the heat dissipation plate, and a semiconductor device having good heat dissipation can be manufactured. it can. That is, when the semiconductor device of this embodiment is mounted, the heat dissipation plate comes into contact with the motherboard or the chassis, so that the heat generated in the semiconductor device is directly transferred to the motherboard or the chassis.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.

INDUSTRIAL APPLICABILITY The present invention can be applied to a technique of sealing at least both sides of a plate-like object which fluctuates up and down by transfer molding.

[0115]

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

(1) Before transfer molding, a height regulator made of resin is attached to the back surface of the support plate of the lead frame and the main surface (upper surface) of the semiconductor chip fixed to the main surface of the support plate, and at the time of transfer molding. In order to perform molding in a state where the lower surface of the height defining body on the back surface of the support plate is in contact with the bottom surface of the cavity and the upper surface of the height defining body on the main surface of the semiconductor chip is in contact with the cavity ceiling surface, The supporting plate and the semiconductor chip do not move up and down even if the melted resin flows into the cavity vigorously, and the supporting plate, the semiconductor chip, and the wire, which are the sealed parts, are not exposed on the surface of the package. . As a result, the sealing yield is increased and the moisture resistance of the semiconductor device is increased.

(2) Since the height defining body covers the root portion of the wire, the wire is supported by the height defining body even if the melted resin flows into the cavity vigorously. Therefore, it is not deformed, and it is possible to prevent the occurrence of wire short circuit and the like, the sealing yield can be improved, and the reliability of the semiconductor device is enhanced.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a transfer mold state in a method for manufacturing a semiconductor device according to an embodiment (Embodiment 1) of the present invention.

FIG. 2 is a cross-sectional view showing the semiconductor device of the first embodiment.

FIG. 3 is a plan view showing a lead frame to which a semiconductor chip is fixed and wire bonding is performed in the method for manufacturing a semiconductor device according to the first embodiment.

FIG. 4 is a partial cross-sectional view of a lead frame to which a semiconductor chip is fixed and wire bonding is performed in the method for manufacturing a semiconductor device according to the first embodiment.

FIG. 5 is an enlarged cross-sectional view showing the height adjuster portion provided on the front and back sides of the support plate in the method for manufacturing a semiconductor device according to the first embodiment.

FIG. 6 is an L according to another embodiment (Embodiment 2) of the present invention.
It is sectional drawing which shows the semiconductor device of OC structure.

FIG. 7 is a sectional view showing a semiconductor device having a hybrid integrated circuit structure according to another embodiment (Embodiment 3) of the present invention.

FIG. 8 is a plan view showing a lead frame used in manufacturing the semiconductor device of the third embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Sealing body (package), 3 ... Lead, 4 ... Support plate, 5 ... Bonding material, 6 ... Semiconductor chip, 7 ...
Wires, 10, 11 ... Height regulating body, 12, 13 ... Positioning surface, 15 ... Lead frame, 16 ... Outer frame, 17 ... Inner frame, 20 ... Support piece, 21 ... Support lead, 25, 26 ... Guide hole, 30 ... Cavity bottom surface, 31 ... Cavity ceiling surface, 32 ... Lower mold, 40 ... Mold mold, 41 ... Lower mold, 42
... Upper mold, 50 ... Insulating film, 60 ... Wiring board, 61
… Passive components.

Claims (12)

[Claims] 1. A sealing body made of resin formed by transfer molding, a support plate positioned in the sealing body and supported by a support lead, and one end of which faces the periphery of the support plate and the other end of which is opposite. A plurality of leads extending outside the sealing body, one or more semiconductor chips fixed to the main surface of the support plate, and a wire electrically connecting the electrodes of the semiconductor chip and the leads. A semiconductor device having
One or more height defining members each having a main surface and a back surface of the supporting plate or a back surface of the supporting plate and a main surface of the semiconductor chip, a part of which is substantially flush with the front surface of the sealing body. A semiconductor device which is provided. 2. A sealing body made of resin formed by transfer molding, a plurality of leads extending inside and outside the sealing body, and an insulator located inside the sealing body and provided on the leads. A semiconductor device having one or more semiconductor chips fixed via the semiconductor chip and wires for electrically connecting the electrodes of the semiconductor chip and the leads, the main surface and the back surface of the semiconductor chip or the semiconductor chip A semiconductor device, wherein one or more height defining members each having a surface that is substantially flush with the front surface of the sealing body are provided on the main surface and the back surface of the lead. 3. A sealing body made of resin formed by transfer molding, a wiring board positioned in the sealing body and supported by support leads, and one end of the wiring board facing the periphery and the other end of the wiring board. A plurality of leads extending outside the sealing body, one or more semiconductor chips and passive components fixed to the main surface of the wiring board, and wires for electrically connecting desired electrodes and wirings A semiconductor device having a hybrid integrated circuit device structure having a main surface and a back surface of the wiring board, a main surface of the semiconductor chip and a back surface of the wiring board, and / or a back surface of the support plate. 1. A semiconductor device, characterized in that one or more height defining bodies each having a surface that is substantially flush with the surface of the stopper are provided. 4. The semiconductor device according to claim 1, wherein the height defining body is an insulator. 5. The semiconductor device according to claim 1, wherein the height defining member covers a root portion of a wire. 6. A mold for a transfer mold apparatus is clamped on a completely assembled lead frame, and then a resin is injected into a cavity of the mold to form a sealing body covering a main surface and a back surface of the lead frame. A method of manufacturing a semiconductor device, comprising: forming a bottom surface and a ceiling surface of the cavity during mold clamping so that a portion of an object to be sealed located in the cavity does not move up and down. A method for manufacturing a semiconductor device, wherein height defining bodies having positioning surfaces that come into contact with each other are selectively provided on the main surface and the back surface of the portion to be sealed, and then transfer molding is performed. 7. A step of preparing a lead frame having a support plate for fixing a semiconductor chip, a step of fixing a semiconductor chip to a main surface of the support plate, and a step of electrically conducting an electrode of the semiconductor chip and a lead tip of the lead frame. And connecting the supporting plate, the semiconductor chip, the wire, etc. by injecting the melted resin into the cavity of the mold after clamping the lead frame in the mold of the transfer mold device. A method of manufacturing a semiconductor device having a molding step of covering with a sealing body, wherein the height is provided on a main surface and a back surface of the support plate or a back surface of the support plate and a main surface of the semiconductor chip before the molding step. 7. The method for manufacturing a semiconductor device according to claim 6, wherein a defining body is formed and then transfer molding is performed. 8. A step of preparing a lead frame having a structure for fixing a semiconductor chip to a main surface or a back surface of a lead via an insulator, and a semiconductor chip on the main surface or a back surface of the lead of the lead frame via an insulator. Fixing the
The step of connecting the electrodes of the semiconductor chip and the leads of the lead frame with a conductive wire, and after clamping the lead frame to the mold of the transfer molding apparatus, injecting the melted resin into the cavity of the mold. A method of manufacturing a semiconductor device, the method including a molding step of covering the semiconductor chip, wires, and the like with a sealing body, the main surface and the back surface of the semiconductor chip or the main surface of the semiconductor chip before the molding step. 7. The method of manufacturing a semiconductor device according to claim 6, wherein the height defining body is attached to the back surface of the lead, and then transfer molding is performed. 9. A step of preparing a lead frame to which a wiring board is fixed, a step of fixing a semiconductor chip or a passive component to the main surface of the wiring board, and connecting a predetermined electrode or wiring with a conductive wire. Steps, after the lead frame is clamped in the mold of the transfer mold device, molten resin is injected into the cavity of the mold to seal the wiring board, semiconductor chip, passive components, wires, etc. A method of manufacturing a hybrid integrated circuit type semiconductor device having a covering step, which comprises a main surface and a back surface of the wiring board or a main surface of the semiconductor chip and a back surface of the wiring board before the molding step and / or 7. The method of manufacturing a semiconductor device according to claim 6, wherein the height defining body is attached to the back surface of the support plate, and then transfer molding is performed. 10. The height regulating body is formed by applying and curing an insulating resin of the same system as that of the resin forming the sealing body.
13. The method for manufacturing a semiconductor device according to claim 1. 11. The method of manufacturing a semiconductor device according to claim 10, wherein the base of the wire is covered with the height defining member. 12. The height defining body provided on each of the main surface and the back surface of the lead frame is sandwiched between a lower mold and an upper mold at the time of semi-curing to be molded to have a predetermined thickness. A method of manufacturing a semiconductor device according to claim 10 or 11.