JPH09283455A - Vertical wafer boat - Google Patents

Vertical wafer boat

Info

Publication number
JPH09283455A
JPH09283455A JP9519996A JP9519996A JPH09283455A JP H09283455 A JPH09283455 A JP H09283455A JP 9519996 A JP9519996 A JP 9519996A JP 9519996 A JP9519996 A JP 9519996A JP H09283455 A JPH09283455 A JP H09283455A
Authority
JP
Japan
Prior art keywords
wafer
supporting
support
thickness
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9519996A
Other languages
Japanese (ja)
Inventor
Toshiyuki Mori
利之 森
Masatoshi Suzaki
真年 須崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TEKUNISUKO KK
Original Assignee
TEKUNISUKO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TEKUNISUKO KK filed Critical TEKUNISUKO KK
Priority to JP9519996A priority Critical patent/JPH09283455A/en
Publication of JPH09283455A publication Critical patent/JPH09283455A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To make it possible to support a wafer with its load being nearly evenly dispersed to three points by forming a plurality of supporting sections in main supporters for supporting the wafer by three points and making the thickness of each of the supporting section nearly the same as that of the wafer to be supported. SOLUTION: A wafer boat 1 is constituted of three main supporters 2, an upper supporter 3, and a lower supporter 4. These three main supporters 2 and the upper supporter 3 and the lower supporter 4 are so formed as to be assembled and disassembled by specified stoppers at an upper and a lower end of each of the main supporters 2. In the three main supporters 2, projecting supporting sections 2a are formed at a plurality of levels. The supporting sections 2a of the three main supporters 2 are so formed as to be at the same levels. The projecting directions of the supporting sections 2a are all inwards. The thickness of each supporting section 2a is made nearly the same as that of a mounted wafer 'a' or the thickness of the wafer 'a' ±10% or about. Therefore, the wafer 'a' can be supported with its load being dispersed evenly to the three main supporters.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、多数枚の半導体ウ
エーハを搭載して高温で熱処理するための縦型ウエーハ
ボートに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical wafer boat for mounting a large number of semiconductor wafers for heat treatment at high temperature.

【0002】[0002]

【従来の技術】この種のウエーハボートには、複数のウ
エーハを略垂直にして横に並べて外周縁を支持する、所
謂横型タイプと、複数のウエーハを横にして上下方向に
並べ各ウエーハの周辺近傍を複数箇所において支持す
る、所謂縦型タイプの2種類がある。ところで、熱処理
炉の小型化及び搬送の容易さのメリットを考慮すると共
に、近年、ウエーハの大口径化に伴って、ウエーハボー
トは横型タイプから縦型タイプに移行しつつある。
2. Description of the Related Art A wafer boat of this type includes a so-called horizontal type in which a plurality of wafers are arranged substantially vertically and arranged side by side to support an outer peripheral edge, and a plurality of wafers are arranged side by side in a vertical direction to surround each wafer. There are two types of so-called vertical type that support the vicinity at a plurality of locations. By the way, in consideration of the merits of downsizing of a heat treatment furnace and ease of transportation, and in recent years, a wafer boat is shifting from a horizontal type to a vertical type along with the increase in diameter of the wafer.

【0003】縦型ウエーハボートとしては、上部を支持
して吊垂させるタイプと、下部を支持して起立させるタ
イプとがある。下部を支持する起立タイプとしては、例
えば特開平4−6826号公報に開示された構成のもの
が従来例として公知である。この公知の縦型ウエーハボ
ートにおいても、ウエーハの外周近傍を4箇所で支持す
る構成になっている。
As the vertical wafer boat, there are a type in which the upper portion is supported and suspended, and a type in which the lower portion is supported and raised. As an upright type supporting the lower portion, for example, a configuration disclosed in Japanese Patent Application Laid-Open No. Hei 4-6826 is known as a conventional example. Also in this known vertical wafer boat, the vicinity of the outer periphery of the wafer is supported at four points.

【0004】[0004]

【発明が解決しようとする課題】この種の縦型ウエーハ
ボードは、ウエーハの外周近傍を複数箇所において支持
する構造であるため、1200℃前後の高温で熱処理を
行うと、図7で示したように、ウエーハaにおいて、支
持されている部分からウエーハの内部に向かって歪みb
が生ずるという現象が起きる。この歪みは、外見上では
視認できないが、X線写真によって確認できる。
This type of vertical wafer board has a structure in which the vicinity of the outer periphery of the wafer is supported at a plurality of points, and therefore, when heat treatment is performed at a high temperature of around 1200 ° C., as shown in FIG. Then, in the wafer a, strain b is applied from the supported portion toward the inside of the wafer.
Occurs. This distortion cannot be visually recognized but can be confirmed by an X-ray photograph.

【0005】この歪みが生ずる現象をスリップと称して
いるが、このスリップは、ウエーハ径が8インチ、12
インチと大口径になるにつれて大きくなると共に多くな
る傾向にある。そして、スリップが大きく且つ多くなる
とウエーハの品質の低下、IC、LSI等の半導体の品
質低下、半導体製造の歩留りの低下等の不都合を招く原
因になっている。
The phenomenon in which this distortion occurs is called a slip. This slip has a wafer diameter of 8 inches and 12
It tends to increase and increase as the diameter increases to inches. When the slip is large and large, it causes inconveniences such as deterioration of the quality of the wafer, deterioration of the quality of semiconductors such as IC and LSI, and decrease of the yield of semiconductor manufacturing.

【0006】従って、縦型ウエーハボートにおいては、
スリップをなくすことに解決しなければならない課題を
有している。
Therefore, in the vertical wafer boat,
There is a problem to be solved in eliminating slip.

【0007】そこで、本発明者等が種々研究した結果、
縦型ウエーハボートにおいて、搭載したウエーハの自重
がボートの支持部に均等に分散していないこと、及び複
数枚(例えば125枚)のウエーハを搭載した縦型ウエ
ーハボートは750℃程度にランプダウンされた熱処理
炉内に搬入され、その後60〜80分程度の時間を掛け
て1150℃程度までランプアップされるが、その際に
ウエーハの温度上昇率とウエーハボート、特に支持部の
温度上昇率とが相違していることに起因してスリップが
生ずるとの知見を得た。
Therefore, as a result of various studies by the present inventors,
In a vertical wafer boat, the weight of the loaded wafer is not evenly distributed on the support part of the boat, and the vertical wafer boat with a plurality of (for example, 125) wafers is ramped down to about 750 ° C. And then ramped up to about 1150 ° C. over a period of about 60 to 80 minutes. At that time, the temperature rise rate of the wafer and the temperature rise rate of the wafer boat, especially the support portion We have found that slippage occurs due to the difference.

【0008】[0008]

【課題を解決するための手段】前記従来例の課題を解決
する具体的手段として本発明は、少なくともウエーハを
支持する支持本体と、該支持本体を上下で支持する上部
支持体と下部支持体とを含み、前記支持本体には、ウエ
ーハを3点で支持する支持部が複数形成されており、該
支持部はウエーハの厚みと略同じ厚さに形成したことを
特徴とする縦型ウエーハボートを提供するものである。
As a concrete means for solving the above-mentioned problems of the prior art, the present invention provides a support main body for supporting at least a wafer, and an upper support and a lower support for supporting the support main body vertically. And a plurality of support portions for supporting the wafer at three points are formed on the support body, and the support portions are formed to have substantially the same thickness as the thickness of the wafer. It is provided.

【0009】前記支持部の厚みは、ウエーハの厚みに対
して±10%の範囲内に形成されていること、前記3点
の支持は、ウエーハを支持した際、ウエーハの重心を中
心としてウエーハの搬入出側の2点の支持部の中心角が
略140°であり、その2点の支持部と他の支持部との
中心角がそれぞれ略110°であること、前記支持部の
ウエーハと接触する面の面粗度は、Rmax5μm以下
及びRa0.5μm以下であること、前記支持部材は、
シリコンまたは炭化硅素のいづれかで形成されているこ
と、及び少なくとも支持本体、上部支持体及び下部支持
体が、着脱自在に形成された組立式であることを含むも
のである。
The thickness of the support portion is formed within a range of ± 10% with respect to the thickness of the wafer. The three points of support are such that when the wafer is supported, the center of gravity of the wafer is the center of the wafer. The center angle of the supporting portions at the two points on the carry-in / out side is approximately 140 °, and the central angle between the supporting portions at the two points and the other supporting portions is approximately 110 °, respectively The surface roughness to be applied is Rmax 5 μm or less and Ra 0.5 μm or less, and the support member is
It is formed of either silicon or silicon carbide, and at least the supporting body, the upper supporting body and the lower supporting body are detachable and assembled.

【0010】本発明に係る縦型ウエーハボートにおいて
は、ウエーハを3点で支持することにより、ウエーハの
自重を3点の支持部に均等に分散することができ、更に
支持部の厚みを略ウエーハと同じ厚さにすることによ
り、熱伝導による温度上昇率を同じにすることで、スリ
ップの発生を解消することができるのである。
In the vertical wafer boat according to the present invention, by supporting the wafer at three points, the weight of the wafer can be evenly distributed among the three supporting points, and the thickness of the supporting section is substantially the same. By making the thickness the same as, the temperature rise rate due to heat conduction is made the same, so that the occurrence of slip can be eliminated.

【0011】[0011]

【発明の実施の形態】次に本発明を図示の実施例により
更に詳しく説明する。図1は一部を分解して示した本発
明の縦型ウエーハボート1を示すものであり、該ウエー
ハボート1はウエーハを支持するために、3本の支持本
体2と、上部支持体3及び下部支持体4とから構成され
ている。前記支持本体2は実質的に柱状体を呈し、前記
上下の支持体3,4は実質的に板状を呈するものであ
る。
BEST MODE FOR CARRYING OUT THE INVENTION The present invention will now be described in more detail with reference to the embodiments shown in the drawings. FIG. 1 shows a vertical wafer boat 1 of the present invention, which is shown in a partially disassembled state. The wafer boat 1 has three support bodies 2 and an upper support body 3 for supporting a wafer. It is composed of a lower support 4. The support body 2 has a substantially columnar shape, and the upper and lower supports 3 and 4 have a substantially plate shape.

【0012】これら3本の支持本体2と、上部支持体3
及び下部支持体4とは、各支持本体2の上下端部におい
て所定の係止手段により組立自在に形成されている。こ
の所定の係止手段は、上下端部のそれぞれの係止部にお
いて略同一構造であるので、その一つについて図2〜3
を用いて説明する。
These three support bodies 2 and the upper support 3
The lower support 4 and the lower support 4 are formed at the upper and lower ends of each support body 2 so as to be assembled by a predetermined locking means. This predetermined locking means has substantially the same structure at the upper and lower locking parts, and one of them is shown in FIGS.
This will be described with reference to FIG.

【0013】一方の支持本体2の上下端部には、外向き
の鉤部5が一体に形成されと共に、その鉤部5に近接し
た位置の内側に凹状の被係合部5aが形成され、他方の
上部支持体3及び下部支持体4には、前記鉤部5が嵌合
して係止される係止孔6を設けると共に、ストッパー片
7を回転可能に設けてある。そして、係止孔6内には鉤
部5が実質的に係合する段部6aが形成されている。
Outward hooks 5 are integrally formed on the upper and lower ends of one of the support bodies 2, and a concave engaged portion 5a is formed inside the position close to the hook 5. The other upper support 3 and the lower support 4 are provided with a locking hole 6 into which the hook 5 is fitted and locked, and a stopper piece 7 rotatably provided. A step portion 6a is formed in the locking hole 6 so that the hook portion 5 is substantially engaged.

【0014】前記ストッパー片7には回転を許容するボ
ス部7aが一体に突出形成されると共に、支持本体2に
形成された被係合部5aに回動係合部7bが形成され、
前記ボス部7aを上下の支持体3,4に設けた軸孔8に
装着して回転可能に取り付けられる。
A boss portion 7a for allowing rotation is integrally formed on the stopper piece 7, and a rotary engaging portion 7b is formed on an engaged portion 5a formed on the support body 2.
The boss portion 7a is mounted in a shaft hole 8 provided in the upper and lower supports 3 and 4 so as to be rotatable.

【0015】このような構成の係止手段を用いることに
より、先ず下部支持体4に対して3本の支持本体2の下
端部を各対応する係止孔6内に装着して起立状態にし、
支持本体2の上端部に上部支持体3を載せ、各対応する
係止孔6内に上端部を夫々装着する。
By using the locking means having such a structure, first, the lower end portions of the three supporting main bodies 2 are mounted in the corresponding locking holes 6 with respect to the lower support body 4 and are brought into the standing state,
The upper support 3 is placed on the upper end of the support body 2, and the upper ends are mounted in the corresponding locking holes 6, respectively.

【0016】この装着状態において、各支持本体2の端
部を外側方向に僅かに移動させることで、鉤部5と段部
6aとが係合するようになり、その状態において、各ス
トッパー片7をそれぞれ回転させて支持本体2の内側面
に形成された被係合部5aに回動係合部7bが係合する
ことにより、支持本体2が内側方向に移動しない状態に
なり、鉤部5と段部6aとの係合が安定した状態に維持
されて、図4に示したように、縦型ウエーハボート1の
組立が完了する。分解する場合には、前記とは逆の作業
を行えば良い。なお、ストッパー片7は回転可能な状態
で設けられているが、これに代わって、例えば別体の楔
部材を係止孔6内に落とし込むようにしても良い。
In this mounted state, the end portions of the respective support main bodies 2 are slightly moved outwardly so that the hook portion 5 and the step portion 6a are engaged with each other, and in this state, the stopper pieces 7 are provided. When the rotary engagement portion 7b engages with the engaged portion 5a formed on the inner surface of the support body 2 by rotating the support body 2 respectively, the support body 2 does not move inward, and the hook portion 5 The engagement between the step portion 6a and the step portion 6a is maintained in a stable state, and as shown in FIG. 4, the assembly of the vertical wafer boat 1 is completed. When disassembling, the reverse operation to the above may be performed. The stopper piece 7 is provided in a rotatable state, but instead of this, for example, a separate wedge member may be dropped into the locking hole 6.

【0017】3本の支持本体2には、ウエーハaを搭載
するために、複数段(例えば125段)の支持部2aが
同一レベルをもってそれぞれ整列して突出形成され、各
支持部2aは全部が内側方向に突出している。
In order to mount a wafer a on the three support bodies 2, a plurality of stages (for example, 125 stages) of support portions 2a are formed in a protruding manner so as to be aligned at the same level, and each support portion 2a is entirely formed. It projects inward.

【0018】この場合の各支持部2aの厚みは、図5に
示したように、載置されるウエーハaの厚みと略同一、
もしくはウエーハaの厚み±10%程度の厚みに形成し
てある。これは、支持部2aの温度上昇率をウエーハa
と略同等または限りなく近似させるためである。
The thickness of each supporting portion 2a in this case is substantially the same as the thickness of the wafer a to be placed, as shown in FIG.
Alternatively, the thickness of the wafer a is about ± 10%. This is because the rate of temperature rise of the supporting portion 2a is
This is because it is approximately equal to or infinitely close to.

【0019】また、各支持部2aにおけるウエーハaと
接触する面の面粗度は、Rmax5μm以下及びRa
0.5μm以下に設定してある。これは、面粗度の粗さ
に起因して支持部2aにおける重量の不均一の防止、延
いてはスリップを防止するためである。
The surface roughness of the surface of each supporting portion 2a that contacts the wafer a is Rmax of 5 μm or less and Ra.
It is set to 0.5 μm or less. This is to prevent non-uniformity of the weight of the supporting portion 2a due to the roughness of the surface roughness, and to prevent slipping.

【0020】3本の支持本体2と、上部及び下部支持体
3,4との結合は、前記した通りであるが、3本の支持
本体2を用いるということはウエーハaを3点で支持す
るということであり、しかもウエーハaの自重が各支持
部2aにおいて略均等に分散される必要がある。
The connection between the three support bodies 2 and the upper and lower supports 3, 4 is as described above, but the use of three support bodies 2 means that the wafer a is supported at three points. That is, the weight of the wafer a needs to be evenly distributed in each of the supporting portions 2a.

【0021】そのために、図6に示したように、3本の
支持本体2は所定の角度間隔をもって取り付ける必要が
ある。そして、ウエーハaは、方向を合わせるための所
謂オリフラcが形成されており、必ずしも限定されるも
のではないが、該オリフラcが前面側に来るようにして
縦型ウエーハボート1にウエーハaが搬入及び搬出され
る。
Therefore, as shown in FIG. 6, it is necessary to mount the three support bodies 2 at a predetermined angular interval. The wafer a is formed with a so-called orientation flat c for aligning the direction, and the orientation is not necessarily limited, but the orientation of the orientation flat c is brought to the front side and the wafer a is loaded into the vertical wafer boat 1. And be delivered.

【0022】これらのことを考慮して、3点支持の内、
前面側に位置する2点の支持本体2は、搭載されるウエ
ーハaの重心を中心にして中心角がウエーハaの搬入出
可能な角度、即ち略140°の角度範囲となるように
し、これら前面側に2点の支持本体2に対して後面側に
位置する1点の支持本体2は、前記2点の支持本体2か
らの中心角が略110°の角度範囲になるように設定し
てある。
Considering these points, among the three-point support,
The two support bodies 2 located on the front side are arranged such that the center angle of the center of the center of gravity of the wafer a to be loaded is the angle at which the wafer a can be carried in and out, that is, an angle range of about 140 °. The support body 2 at one point located on the rear surface side with respect to the support body 2 at two sides is set such that the central angle from the support body 2 at the two points is within an angle range of about 110 °. .

【0023】このように3点支持における各点の角度範
囲を設定することにより、縦型ウエーハボート1に対す
るウエーハaの搬入及び搬出が容易に行えると共に、各
支持点に対するウエーハaの荷重が略均等に分散するよ
うになる。特に、3点支持であるため、例えばウエーハ
aの平面度に多少の誤差(全体的な歪みも含む)があっ
たにしても、4点支持のものに比べて、支持部2aに対
する荷重の偏りがほとんど生じないのである。
By setting the angular range of each point in the three-point support as described above, loading and unloading of the wafer a with respect to the vertical wafer boat 1 can be easily performed, and the load of the wafer a with respect to each supporting point is substantially equal. Will be dispersed in. In particular, since it is a three-point support, even if there is some error (including overall distortion) in the flatness of the wafer a, the deviation of the load on the support portion 2a is greater than that of the four-point support. Hardly occurs.

【0024】前記した構成部材は、従来と同様に耐熱性
に優れた材料で形成されるが、少なくともウエーハaが
載置される支持部2aは、温度上昇率をウエーハaに合
わせることで薄く形成するようにしたので、シリコンま
たは炭化硅素のいずれかで形成した方が良い。そして、
本発明に係るウエーハボートは組立式で且つ縦型であ
り、吊垂式でも下部支持式でも使用できるものである。
The above-mentioned constituent members are formed of a material having excellent heat resistance as in the conventional case, but at least the supporting portion 2a on which the wafer a is placed is formed thin by adjusting the temperature rise rate to the wafer a. Therefore, it is preferable to use silicon or silicon carbide. And
The wafer boat according to the present invention is an assembling type and a vertical type, and can be used as a hanging type or a lower supporting type.

【0025】そして、実際に本発明の縦型ウエーハボー
ト1を使用して、従来例と同様の手段で熱処理を行っ
た。即ち、125枚のウエーハaを搭載した後、750
℃程度にランプダウンされた熱処理炉内に縦型ウエーハ
ボート1を搬入し、その後60分程度の時間を掛けて略
1150℃程度までランプアップして熱処理を行った。
その結果、支持部2aで支持されていた部分に、わずか
な歪みが確認されたが、従来例に見られたような大きな
歪みは認められず、実質的に半導体製品の品質低下につ
ながらない程度であった。従って、スリップ現象を大幅
に改善できたのである。
Then, the vertical wafer boat 1 of the present invention was actually used to perform heat treatment in the same manner as in the conventional example. That is, after mounting 125 wafers a, 750
The vertical wafer boat 1 was loaded into the heat treatment furnace that was ramped down to about 0 ° C., and then the heat treatment was performed by ramping it up to about 1150 ° C. for about 60 minutes.
As a result, a slight distortion was confirmed in the portion supported by the supporting portion 2a, but the large distortion as seen in the conventional example was not recognized, and the distortion was not substantially associated with the deterioration of the quality of the semiconductor product. there were. Therefore, the slip phenomenon was significantly improved.

【0026】[0026]

【発明の効果】以上説明したように、本発明に係る縦型
ウエーハボートは、少なくともウエーハを支持する支持
本体と、該支持本体を上下で支持する上部支持体と下部
支持体とを含み、前記支持本体には、ウエーハを3点で
支持する支持部が複数形成されており、該支持部はウエ
ーハの厚みと略同じ厚さに形成した構成であるため、特
に3点支持によって、搭載されるウエーハの荷重を3点
で略均等に分散して支持することができると共に、支持
部の厚みをウエーハの厚みと略同じ厚さにしたことで、
ウエーハと同じに温度上昇するようになり、両者相俟っ
てスリップを避けることができるという優れた効果を奏
する。
As described above, the vertical wafer boat according to the present invention includes at least a supporting body for supporting the wafer, an upper supporting body and a lower supporting body for supporting the supporting body vertically. A plurality of supporting portions for supporting the wafer at three points are formed on the supporting body, and since the supporting portions are formed to have substantially the same thickness as the thickness of the wafer, they are mounted by three-point supporting in particular. The load of the wafer can be distributed and supported substantially evenly at three points, and the thickness of the supporting portion is made substantially the same as the thickness of the wafer,
The temperature rises in the same way as with a wafer, and it has an excellent effect that both sides can avoid slip.

【0027】また、前記支持部の厚みは、ウエーハの厚
みに対して±10%の範囲内に形成されていること、及
び前記3点の支持は、ウエーハを支持した際、ウエーハ
の重心を中心としてウエーハの搬入出側の2点の支持部
の中心角が略140°であり、その2点の支持部と他の
支持部との中心角がそれぞれ略110°である構成にし
たことにより、温度上昇率をウエーハと略同じにするこ
と、及び3点支持の角度を設定することで、均等な荷重
を受けて熱処理ができること、により前記と同様にスリ
ップを防止することができるのである。
Further, the thickness of the supporting portion is formed within a range of ± 10% with respect to the thickness of the wafer, and the three points of supporting are centered on the center of gravity of the wafer when supporting the wafer. As a result, the central angle of the supporting portions at the two points on the loading / unloading side of the wafer is approximately 140 °, and the central angle between the supporting portions at the two points and the other supporting portions are approximately 110 °, respectively. By making the temperature rise rate substantially the same as that of the wafer and setting the angle of the three-point support, the heat treatment can be performed by receiving an even load, so that the slip can be prevented as described above.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る一実施例の縦型ウエーハボートの
一部を分解して示した斜視図である。
FIG. 1 is a perspective view showing an exploded part of a vertical wafer boat according to an embodiment of the present invention.

【図2】同実施例における係止手段の一例を示す係止前
の要部の略示的断面図である。
FIG. 2 is a schematic cross-sectional view of a main part before locking showing an example of locking means in the embodiment.

【図3】同実施例における係止手段の一例を示す係止後
の要部の略示的断面図である。
FIG. 3 is a schematic sectional view of an essential part after locking showing an example of locking means in the same embodiment.

【図4】同実施例の組立完成後における一部を除去して
示した斜視図である。
FIG. 4 is a perspective view showing a part of the same embodiment after completion of assembly, with the part thereof removed.

【図5】同実施例の縦型ウエーハボートにウエーハを搭
載した状態の一部を拡大して示した正面図である。
FIG. 5 is a partially enlarged front view showing a state in which a wafer is mounted on the vertical wafer boat of the embodiment.

【図6】同実施例の縦型ウエーハボートにおける3点支
持の位置関係を示す説明図である。
FIG. 6 is an explanatory diagram showing a positional relationship of three-point support in the vertical wafer boat of the embodiment.

【図7】従来例の装置によって熱処理したウエーハの状
態を説明するための略示的平面図である。
FIG. 7 is a schematic plan view for explaining the state of a wafer that has been heat-treated by a conventional apparatus.

【符号の説明】[Explanation of symbols]

1……縦型ウエーハボート、 2……支持本体、 2a
……支持部、3……上部支持体、 4……下部支持体、
5……支持本体の端部、5a……被係合部、 6……
係止孔、 6a……段部、 7……ストッパー、7a…
…ボス部、 7b……回動係合部、 8……軸孔、 a
……ウエーハ、b……歪み、 c……オリフラ
1 ... Vertical wafer boat, 2 ... Support body, 2a
…… Supporting part, 3 …… Upper support, 4 …… Lower support,
5 ... end of support body, 5a ... engaged portion, 6 ...
Locking hole, 6a ... Step, 7 ... Stopper, 7a ...
… Boss part, 7b …… Rotating engagement part, 8 …… Shaft hole, a
…… Wafer, b… Distortion, c… Orifla

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/68 H01L 21/68 N ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code Agency reference number FI Technical display location H01L 21/68 H01L 21/68 N

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 少なくともウエーハを支持する支持本体
と、該支持本体を上下で支持する上部支持体と下部支持
体とを含み、前記支持本体には、ウエーハを3点で支持
する支持部が複数形成されており、該支持部はウエーハ
の厚みと略同じ厚さに形成したことを特徴とする縦型ウ
エーハボート。
1. A support main body that supports at least a wafer, an upper support and a lower support that support the support main up and down, and the support main body has a plurality of support portions that support the wafer at three points. The vertical wafer boat is characterized in that the supporting portion is formed to have substantially the same thickness as the thickness of the wafer.
【請求項2】 前記支持部の厚みは、ウエーハの厚みに
対して±10%の範囲内に形成されている請求項1に記
載の縦型ウエーハボート。
2. The vertical wafer boat according to claim 1, wherein the thickness of the support portion is within a range of ± 10% with respect to the thickness of the wafer.
【請求項3】 前記3点の支持は、ウエーハを支持した
際、ウエーハの重心を中心としてウエーハの搬入出側の
2点の支持部の中心角が略140°であり、その2点の
支持部と他の支持部との中心角がそれぞれ略110°で
ある請求項1または2に記載の縦型ウエーハボート。
3. The supporting of the three points is such that, when the wafer is supported, the center angle of the two supporting portions on the loading / unloading side of the wafer is about 140 ° with the center of gravity of the wafer as the center, and the two points are supported. The vertical wafer boat according to claim 1 or 2, wherein the central angle between the portion and the other supporting portion is approximately 110 °.
【請求項4】 前記支持部のウエーハと接触する面の面
粗度は、Rmax5μm以下及びRa0.5μm以下で
ある請求項1、2または3に記載の縦型ウエーハボー
ド。
4. The vertical wafer board according to claim 1, 2 or 3, wherein surface roughness of a surface of the supporting portion that contacts the wafer is Rmax 5 μm or less and Ra 0.5 μm or less.
【請求項5】 前記支持部材は、シリコンまたは炭化硅
素のいづれかで形成されている請求項1、2、3または
4に記載の縦型ウエーハボート。
5. The vertical wafer boat according to claim 1, 2, 3 or 4, wherein the support member is formed of either silicon or silicon carbide.
【請求項6】 少なくとも支持本体、上部支持体及び下
部支持体が、着脱自在に形成された組立式である請求項
1、2、3、4または5に記載の縦型ウエーハボート。
6. The vertical wafer boat according to claim 1, wherein at least the supporting main body, the upper supporting body and the lower supporting body are of a removably assembled type.
JP9519996A 1996-04-17 1996-04-17 Vertical wafer boat Pending JPH09283455A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9519996A JPH09283455A (en) 1996-04-17 1996-04-17 Vertical wafer boat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9519996A JPH09283455A (en) 1996-04-17 1996-04-17 Vertical wafer boat

Publications (1)

Publication Number Publication Date
JPH09283455A true JPH09283455A (en) 1997-10-31

Family

ID=14131092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9519996A Pending JPH09283455A (en) 1996-04-17 1996-04-17 Vertical wafer boat

Country Status (1)

Country Link
JP (1) JPH09283455A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112008001108T5 (en) 2007-05-01 2010-04-01 Shin-Etsu Handotai Co., Ltd. Wafer holder, vertical heat treatment boat, which includes a wafer holder, and method for the production of a wafer holder

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112008001108T5 (en) 2007-05-01 2010-04-01 Shin-Etsu Handotai Co., Ltd. Wafer holder, vertical heat treatment boat, which includes a wafer holder, and method for the production of a wafer holder
US8506712B2 (en) 2007-05-01 2013-08-13 Shin-Etsu Handotai Co., Ltd. Wafer support jig, vertical heat treatment boat including wafer support jig, and method for manufacturing wafer support jig
DE112008001108B4 (en) 2007-05-01 2022-03-31 Shin-Etsu Handotai Co., Ltd. Wafer holder, vertical heat treatment boat including a wafer holder and method for manufacturing a wafer holder

Similar Documents

Publication Publication Date Title
JP3151118B2 (en) Heat treatment equipment
US5507873A (en) Vertical boat
JPH09251961A (en) Heat-treating boat
JPH0745691A (en) Wafer holder
KR100693892B1 (en) Heat treatment jig and heat treatment method for silicon wafer
JPH09283455A (en) Vertical wafer boat
JPH09199437A (en) Semiconductor wafer supporting device
JPH09199438A (en) Heat treating jig
JPH10284429A (en) Wafer supporting device
JP3388668B2 (en) Heat treatment boat and vertical heat treatment equipment
JPH10144616A (en) Semiconductor wafer supporting port
JP3125968B2 (en) Vertical wafer boat
JP2001176811A (en) Wafer support device
JPH04304652A (en) Boat for heat treating device
JP3942317B2 (en) Semiconductor wafer heat treatment holder and heat treatment method
JPS61267317A (en) Boat for vertical type diffusion furnace
JP3069350B1 (en) Dummy wafer and heat treatment method using the dummy wafer
JP2916235B2 (en) Semiconductor wafer processing equipment
JP3098251B2 (en) Wafer support device
JP3337316B2 (en) Wafer boat for vertical heat treatment furnace
JP4285676B2 (en) Vertical wafer boat
JPH06151347A (en) Boat for vertical heat treatment furnace
JP3297267B2 (en) Heat treatment wafer boat and heat treatment apparatus using the same
JPH1154447A (en) Jig for supporting wafers and heat-treating apparatus using the same
JP3867509B2 (en) Horizontal heat treatment furnace boat and heat treatment method

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050216

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050413

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20051017