JPH09283366A - Capacitor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a capacitor having excellent safety function with less capacitance drop over aging in the charged state, without enlarging the capacitor size. SOLUTION: In this capacitor wound up with or laminated with metal vapor deposited films having insulating parts (hereafter called safety mechanism margin) provided with bottleneck parts 6 for electric coupling with the metal vapor deposited films and free margin provided for the insulation from the sectioned metal vapor deposited films, the capacitor is wound up with or laminated with the metal vapor deposited film in different sectioned area. Through these procedures, the capacitor having excellent safety function at less capacitance drop over aging in the charged state can be manufactured without enlarging the capacitor size.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a capacitor using a metal vapor deposition film with a security mechanism.

[0002]

2. Description of the Related Art In order to enhance the safety of a capacitor, Japanese Patent No. 132759, European Patent Publication 00175561, German Patent 1079203, Japanese Patent Publication No. 1-30284,
JP-A-7-86088 or JP-A-4-22
In Japanese Patent No. 5508, the metal vapor deposition film is fractionated by an insulator part, and the vapor deposition film parts separated by the insulator part are electrically connected or the fractionated vapor deposition film part is electrically connected to the outside. An insulating portion having a bottleneck portion (hereinafter referred to as a safety mechanism margin) is provided in the insulating portion in order to electrically connect with the metal vapor deposition film portion for taking out, and a dielectric breakdown portion when the dielectric breakdown occurs. The electric current flowing through the metal film causes the metal vapor deposition film in the bottleneck portion to break, and the metal vapor deposition portion is electrically isolated from another fractionated vapor deposition portion or an external power source, and the cause of destruction of the capacitor is cut off. A method has been proposed.

These capacitors with a safety mechanism are (1)
Capacitors that are wound or laminated with each other with a metallized film with a safety mechanism margin, or (2) Capacitors that are wound or laminated with a metallized film with a safety mechanism margin and a normal metallized film without a safety mechanism margin. Although it has been put to practical use, the capacitor of type (1) has a good safety function, but the safety function is easy to work due to corona discharge, etc. Furthermore, the safety function of the metal vapor deposition film above and below the dielectric breakdown dielectric material also works at the same time. As a result, there is a problem that the capacitance of the capacitor significantly decreases with time under voltage application. Furthermore, since there is a safety mechanism margin in the metal vapor deposition film above and below the dielectric that will be the electrode, the electrode area will be narrowed,
The capacity is reduced by 10 to 20% as compared with a normal capacitor without a safety mechanism margin. Therefore, it is necessary to wrap an extra metal vapor deposition film, and the size of the capacitor becomes large.

On the other hand, with the capacitor (2), the problem of a decrease in capacity or an increase in size of the capacitor is less, but there is a problem that the security functionality is hard to work.

[0005]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a capacitor which does not increase the size of the capacitor, has a small decrease in capacity over time under voltage application, and has a good safety function. is there.

[0006]

Means for Solving the Problems The present invention refers to a free margin provided on a dielectric film for achieving insulation between a metal vapor deposition film and the metal vapor deposition film, and fractionating the metal vapor deposition film, Insulation having a divided metal vapor deposition film portion or a bottleneck portion for electrically connecting the divided metal vapor deposition film portion and the metal vapor deposition film portion for electrical connection with the outside. Parts (hereinafter referred to as security mechanism margins) are wound or laminated on a metal vapor deposition film, and a capacitor is formed by winding or laminating metal vapor deposition films having different fractionated vapor deposition film areas. It is a capacitor characterized by that.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in more detail below using the vapor deposition film with a security mechanism shown in FIG.

The metal vapor deposition film 1 is provided with a metal vapor deposition film on the dielectric film and a free margin 2 provided to insulate the metal vapor deposition film, and the metal vapor deposition film. The safety mechanism margin 5 has a bottleneck portion 6 for electrically connecting the metal vapor deposition film portion 3 and the metal vapor deposition film portion 4 for electrically connecting the outside.

In the conventional capacitor, metal vapor deposition films having the same area S1 of the divided metal vapor deposition film portion 3 of FIG. 1 (A) are wound or laminated, or vapor deposition with a safety mechanism margin of FIG. 1 (A). It was made by winding or laminating the film 1 and an ordinary metal vapor deposition film having no security mechanism margin of FIG.

On the other hand, the capacitor of the present invention is shown in FIG.
The metal vapor deposition film of (A) and the metal vapor deposition film in which the area S2 of the metal vapor deposition part 3 divided as shown in FIG. 1 (B) is S2> S1 are wound or laminated.

S2 is 1.5S1≤S2≤5S1, and more preferably 2S1≤S2≤4S1. S2 is 1.5S
If it is less than 1, the area of the metal vapor deposition film is small and the size of the capacitor is large. If S2 exceeds 5S1, the capacity will drop significantly when the safety function operates under voltage.

The widths of the free margins d1 and d2, the widths of the security mechanism margins b1, b2, c1 and c2, and the widths of the bottleneck a1 and a2 are the rated voltage and capacity of the capacitor, the type and thickness of the dielectric film, and the vapor deposition. Depending on the type of metal and the film resistance, d1 and d2, b1 and b2,
It is more preferable that c1 and c2 are equal and a2> a1. Further, a plurality of bottleneck portions 6 may be provided for one divided metal vapor deposition film portion 3, and the pattern of the security mechanism margin 5 is not limited to that shown in FIG. Patent Publication 00175561, German Patent 1079203, Japanese Patent Publication No. 1-30284,
Alternatively, various patterns can be used as described in JP-A-7-86088. The feature of the present invention is to have the same security mechanism margin pattern,
In addition, it is a capacitor made by winding or laminating metal vapor deposition films having different areas S of the divided metal vapor deposition film portions 3.

It should be noted that the present invention does not exclude a capacitor in which a safety mechanism margin pattern of a metal vapor deposition film is provided on both sides of one dielectric, and which is wound and laminated with a non-metal vapor deposited dielectric film. In this case, it is necessary to change the area of the divided metal vapor deposition film portion 3 on both sides.
Also, capacitors and the like in which a dielectric film without vapor deposition is inserted between the vapor deposition film with a margin of the present security mechanism and which is wound or laminated are not excluded.

As another embodiment of the present invention, as shown in FIG. 3, a metal vapor deposition part 3 is divided into one metal vapor deposition film 1 by a security mechanism margin 5 so as to have different areas.
The capacitor of the present invention can be manufactured by providing Nos. 1 and 32 and winding and laminating the metal vapor deposition films. In this case, three or more divided metal vapor deposition parts having different areas may be provided. In the pattern of FIG. 3, the intervals a1 and a2 of the bottleneck are a2> s1 in combination of s2> s1.
It is preferably a1. Further, in the case of the pattern as shown in FIG. 4, it is preferable that the interval lengths f1 and f2 of one pattern before the pattern change are f1> f2 when s2> s1.

[0015]

【Evaluation method】

(1) Security Functionality Evaluation Method Based on JISC4908-1985, 8.15.2, a test was conducted. The capacity of the discharging capacitor C0 is 8μF.
And The environmental conditions for the test were 85 ° C.

(2) Capacitance Change with Time under Electric Charge of Capacitor The capacitor was placed in an oven at 85 ° C., 286 V was applied, the capacity after 1000 hours was examined, and the rate of change in capacity was obtained from the following equation. Capacity change rate (%) = [(Capacity after voltage test-
Capacity before voltage test) / Capacity before voltage test] x 100

[0017]

【Example】

Example 1, Comparative Example 1, Comparative Example 2 A Zn-Al alloy vapor-deposited film with a polypropylene film having a thickness of 5 μm and having a safety mechanism margin of the pattern of FIG. 1 (A) and the pattern of FIG. 1 (B). Width 630
A metal vapor deposition film of mm was prepared. Free margin 2
Width d1, d2 = 2.0 mm, fractionated metal vapor deposition film 3
Area S1 = 1535 mm ² , S2 = 3470 mm ² ,
Security mechanism margin widths b1 and b2 = 0.45 mm, c
1, c2 = 0.30 mm, three bottleneck 6 are formed on one divided metal vapor deposition film 3, and the width a1 of the bottleneck 6 is 0.3.
5 mm and a2 = 0.45 mm.

A metal vapor deposition film portion 4 which is electrically connected to the outside.
(The portion where the metallikon adheres to the metal), the metal vapor deposition film resistance of the bottleneck 6 was 4Ω / □, and the metal vapor deposition film resistance of the divided metal vapor deposition film 3 was 8Ω / □.

As for the safety mechanism margin, silicone oil is transferred to the polypropylene film in the pattern of the safety mechanism margin of FIG.
Next, Al and Zn were formed by vapor deposition.

After slitting these metal vapor-deposited films to a width of 50 mm, the films of FIGS. 1 (A) and 1 (B) in Example 1 and the film of FIG. 1 (A) in Comparative Example 1 were patterned in the same pattern. The film deposited in the same direction as 1 (B)
In Comparative Example 2, as a metal deposition film combined with FIG. 1A, a normal Zn film having a safety mechanism margin of 5 μm was not used.
-Al alloy vapor-deposited film is wound, metallikoned, heat-treated, leaded, put in a plastic case, and then filled with epoxy resin by a usual method of 5.0.
A μF capacitor was created.

The combined metal vapor deposition film used in Comparative Example 2 had a free margin width of 2.0 mm, a metal vapor deposition film resistance of 4 Ω / □ at the heavy edge portion, and a metal vapor deposition film resistance of 8 Ω / □ at the active portion.

Table 1 shows the results of evaluation of the safety function of these capacitors. As shown in Table 1, the capacitor of the present invention did not have too high a safety function and did not ignite, and showed a good safety function.

Table 2 shows the rate of change in capacitance of the capacitor after 1,000 hours have passed under voltage. As shown in Table 2, the capacitor of the present invention did not break, and showed a result that the capacity was less reduced.

[0024]

[Table 1]

[Table 2]

[0025]

INDUSTRIAL APPLICABILITY According to the present invention, a metal vapor deposited film on a dielectric film and a free margin provided to insulate the metal vapor deposited film, and the metal vapor deposited film are fractionated and fractionated. Insulation part having a bottleneck part for electrically coupling the metal vapor deposition film parts to each other, or the metal vapor deposition film part for electrically coupling the divided metal vapor deposition film part and the outside (hereinafter, safety mechanism margin) In the capacitor formed by winding or laminating a metal vapor deposition film having the following), the size of the capacitor is not increased by winding or laminating metal vapor deposition films having different fractionated vapor deposition film areas. In addition, it is possible to manufacture a capacitor that has a small decrease in capacity with time under application of electricity and has good safety functionality.

[Brief description of drawings]

FIG. 1 is a schematic view showing an example of a metal vapor deposition film having a safety mechanism margin for making a capacitor of the present invention.

FIG. 2 is a normal metal vapor deposition film having no security mechanism margin.

FIG. 3 is a schematic view showing another example of a metal vapor deposition film having a safety mechanism margin for making the capacitor of the present invention.

FIG. 4 is a schematic view showing another example of a metal vapor deposition film having a safety mechanism margin for making the capacitor of the present invention.

[Explanation of symbols]

1: Metal-deposited film 2: Free margin 3: Fractionated metal-deposited film part 4: Metal-deposited film part for electrical connection with the outside of the capacitor 5: Security mechanism margin 6: Bottleneck 7: Metal-deposited film Part 31: Fractionated metal deposition film part 32: Fractionated metal deposition film part a1: Width of bottleneck a2: Width of bottleneck b1: Width of security mechanism margin b2: Width of security mechanism margin c1: Security mechanism margin Width c2: width of security mechanism margin d1: width of free margin d2: width of free margin f1: length of space between identical patterns f2: length of space between identical patterns

Claims (3)

[Claims] 1. A metal vapor deposition film provided on a dielectric film and a free margin provided to insulate the metal vapor deposition film from the dielectric film, and the metal vapor deposition film is fractionated and the metal vapor deposition film part is fractionated. Insulation part having a bottleneck part for electrically connecting the same or the metal vapor-deposited film part that is fractionated and the metal vapor-deposited film part for electrically connecting the outside (hereinafter referred to as a safety mechanism margin) A capacitor formed by winding or laminating a metal vapor deposition film having: and a capacitor formed by winding or laminating metal vapor deposition films having different fractionated vapor deposition film area. 2. The capacitor according to claim 1, which is manufactured by winding or laminating metal vapor deposition films having different narrow widths. 3. A metal vapor deposition film having an area of a fractionated vapor deposition film part which is 2 to 4 times the area of the fractional vapor deposition film part of the other metal vapor deposition film is wound or laminated. The capacitor according to claim 1 or 2, characterized in that.