JPH09258265A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH09258265A JPH09258265A JP6354396A JP6354396A JPH09258265A JP H09258265 A JPH09258265 A JP H09258265A JP 6354396 A JP6354396 A JP 6354396A JP 6354396 A JP6354396 A JP 6354396A JP H09258265 A JPH09258265 A JP H09258265A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- display device
- crystal display
- insulating film
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は液晶表示装置などに
用いられるアクティブマトリクス基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix substrate used for a liquid crystal display device or the like.
【０００２】[0002]
【従来の技術】ガラス等の絶縁性基板上に薄膜トランジ
スタ（以下、ＴＦＴと記す）をマトリクス状に形成し、
これをスイッチング素子として用いるアクティブマトリ
クス型の液晶表示装置は、高画質のフラットパネルディ
スプレイとして期待されている。2. Description of the Related Art Thin film transistors (hereinafter referred to as TFTs) are formed in a matrix on an insulating substrate such as glass,
An active matrix type liquid crystal display device using this as a switching element is expected as a high quality flat panel display.
【０００３】しかし液晶表示装置には、視野角が狭いと
いう問題点がある。その欠点を克服するため、例えば特
開平７−３６０５８号公報に開示されているように、液
晶層に印加する電界を基板面に対して平行にかける方式
の液晶表示装置が開発されている。以下、液晶層に印加
する電界を基板面に対して平行にかける方式の液晶表示
装置を横電界型液晶表示装置と記し、これに対して基板
面に垂直に電界を印加する方式の液晶表示装置を縦電界
型液晶表示装置と記す。However, the liquid crystal display device has a problem that the viewing angle is narrow. In order to overcome the drawback, for example, as disclosed in Japanese Patent Application Laid-Open No. 7-36058, a liquid crystal display device of a type in which an electric field applied to a liquid crystal layer is applied in parallel with a substrate surface has been developed. Hereinafter, a liquid crystal display device in which an electric field applied to the liquid crystal layer is applied in parallel to the substrate surface is referred to as a horizontal electric field type liquid crystal display device, and a liquid crystal display device in which an electric field is applied perpendicularly to the substrate surface. Is referred to as a vertical electric field type liquid crystal display device.
【０００４】図５は、上記公報に開示されている横電界
型液晶表示装置の構成を示す図であり、ＴＦＴ基板の１
画素分に相当する。（ａ）は上から見た図、（ｂ）は図
５（ａ）におけるＢ−Ｂ’線に沿った断面図である。図
５に示すように、基板６ａ上に対向電極５が設けられ、
続いて絶縁膜７がその上に設けられる。絶縁膜７の上
に、ゲート配線１およびデータ配線２が形成され、ゲー
ト配線１上にＴＦＴ８が設けられる。ＴＦＴ８のソース
電極はデータ配線２に接続される。ドレイン電極４は図
５（ａ）に示すように、ゲート配線１およびデータ配線
２で囲まれる領域まで延伸されており、ゲート配線１に
平行にのびる一対の部分と、この一対の部分を接続す
る、データ配線２に平行な部分とから構成される。図５
（ｂ）に示すように形成されたＴＦＴ基板上に図６に示
すように配向膜１４を形成し、基板６ｂ上に配向膜１３
を形成したものと貼り合わせ、両基板間に液晶層９を形
成すれば、横電界型液晶表示装置が完成する。FIG. 5 is a diagram showing the configuration of the horizontal electric field type liquid crystal display device disclosed in the above publication, which is a TFT substrate 1
It corresponds to a pixel. 5A is a view seen from above, and FIG. 5B is a sectional view taken along the line BB ′ in FIG. As shown in FIG. 5, the counter electrode 5 is provided on the substrate 6a,
Then, the insulating film 7 is provided thereon. The gate wiring 1 and the data wiring 2 are formed on the insulating film 7, and the TFT 8 is provided on the gate wiring 1. The source electrode of the TFT 8 is connected to the data line 2. As shown in FIG. 5A, the drain electrode 4 extends to a region surrounded by the gate wiring 1 and the data wiring 2, and connects the pair of portions extending in parallel with the gate wiring 1 to the pair of portions. , And a portion parallel to the data wiring 2. FIG.
An alignment film 14 is formed on the TFT substrate formed as shown in (b) as shown in FIG. 6, and the alignment film 13 is formed on the substrate 6b.
A lateral electric field type liquid crystal display device is completed by laminating the liquid crystal layer 9 between the substrates and the liquid crystal layer 9 formed between the substrates.
【０００５】縦電界型液晶表示装置においては、視角に
よってコントラストが低下したり、表示が反転するとい
う現象は、液晶層を透過してくる光と液晶分子の長軸方
向とのなす角度が視角方向によって変わり、複屈折異方
性が現れることに起因する。これに対して、横電界型液
晶表示装置では、図６に示すように、基板６ａ、６ｂに
対して平行な電界をドレイン電極４と対向電極５との間
に信号電界１５として印加して、液晶層９内の液晶分子
を基板６ａ、６ｂに対して平行な面内で回転させ、それ
により透過率を制御する。このため、液晶分子の長軸方
向と透過光のなす角度は視角方向によっては変わらな
い。したがって、コントラストは視角方向には依存せ
ず、広視野角化を実現することができる。In the vertical electric field type liquid crystal display device, the phenomenon that the contrast is lowered or the display is inverted depending on the viewing angle is caused by the angle formed by the light passing through the liquid crystal layer and the long axis direction of the liquid crystal molecules in the viewing angle direction. It depends on the appearance of birefringence anisotropy. On the other hand, in the horizontal electric field type liquid crystal display device, as shown in FIG. 6, an electric field parallel to the substrates 6a and 6b is applied as a signal electric field 15 between the drain electrode 4 and the counter electrode 5, The liquid crystal molecules in the liquid crystal layer 9 are rotated in a plane parallel to the substrates 6a and 6b, thereby controlling the transmittance. For this reason, the angle formed by the transmitted light and the major axis direction of the liquid crystal molecules does not change depending on the viewing angle direction. Therefore, the contrast does not depend on the viewing angle direction, and a wide viewing angle can be realized.
【０００６】[0006]
【発明が解決しようとする課題】しかし、従来の横電界
型液晶表示装置では、図５（ａ）に示すように対向電極
５がＴＦＴ基板に配設されている。このため、縦電界型
液晶表示装置と比べると配線構造が複雑であり、開口率
が低く、十分な輝度を得ることができないという問題点
があった。However, in the conventional horizontal electric field type liquid crystal display device, the counter electrode 5 is provided on the TFT substrate as shown in FIG. 5 (a). Therefore, there are problems that the wiring structure is more complicated than that of the vertical electric field type liquid crystal display device, the aperture ratio is low, and sufficient luminance cannot be obtained.
【０００７】しかも、図６に示すように、複雑な配線構
造のせいでドレイン電極４と対向電極５との間に印加さ
れる信号電界１５以外にも、各配線間、例えばデータ配
線２とドレイン電極４との間等には雑音電界１６が生
じ、表示に悪影響を及ぼしていた。Moreover, as shown in FIG. 6, in addition to the signal electric field 15 applied between the drain electrode 4 and the counter electrode 5 due to the complicated wiring structure, a space between the wirings, for example, the data wiring 2 and the drain is formed. A noise electric field 16 is generated between the electrode 4 and the like, which adversely affects the display.
【０００８】また、従来の横電界型液晶表示装置では、
数千オングストロームの厚さの電極で１０μｍほどの厚
みの液晶層９全体に電界をかけているために、図６に示
すように、液晶層９に印加される電界は基板に対して完
全に平行にはならない。このため、液晶層９に電界を印
加すると、液晶分子は基板６ａ、６ｂに対して平行な状
態からずれて、液晶分子と基板との間にいくらかの傾き
ができてしまい、その傾きのせいで、原理的にはなくな
るはずの視野角依存性を残す原因となっていた。Further, in the conventional horizontal electric field type liquid crystal display device,
Since the electric field is applied to the entire liquid crystal layer 9 having a thickness of about 10 μm by the electrode having a thickness of several thousand angstroms, the electric field applied to the liquid crystal layer 9 is completely parallel to the substrate as shown in FIG. It doesn't. Therefore, when an electric field is applied to the liquid crystal layer 9, the liquid crystal molecules deviate from the parallel state with respect to the substrates 6a and 6b, and some tilt is generated between the liquid crystal molecules and the substrate. However, it was a cause of leaving the viewing angle dependence that should disappear in principle.
【０００９】本発明はこのような現状に鑑みてなされた
ものであり、十分な開口率を得ると同時に、各配線間か
らの雑音信号を軽減し、ほぼ完全に基板面に対して平行
な横電界を均一に液晶層に印加することのできる液晶表
示装置を提供することを目的とする。The present invention has been made in view of such a situation as described above, and at the same time, a sufficient aperture ratio is obtained, at the same time, a noise signal from between wirings is reduced, and a horizontal direction substantially parallel to the substrate surface is obtained. It is an object of the present invention to provide a liquid crystal display device capable of uniformly applying an electric field to a liquid crystal layer.
【００１０】[0010]
【課題を解決するための手段】本発明の液晶表示装置
は、一対の絶縁性基板と該一対の絶縁性基板に挟持され
た液晶層とを有する液晶表示装置であって、一方の絶縁
性基板上には、マトリクス状に配置されているスイッチ
ング素子と、該スイッチング素子に接続された第一およ
び第二の配線と、該第一および第二の配線を覆うように
配置された、上面および傾斜面を有する層間絶縁膜と、
該液晶層に電界を印加するための第一および第二の電極
であって、一方が該スイッチング素子と電気的に接続さ
れている第一および第二の電極とが形成されており、該
第一および第二の電極は該層間絶縁膜の該上面および傾
斜面を覆うように形成されており、それにより該絶縁性
基板に対して実質的に平行に該電界を該液晶層に印加
し、そのことにより上記目的を達成する。A liquid crystal display device according to the present invention is a liquid crystal display device having a pair of insulating substrates and a liquid crystal layer sandwiched between the pair of insulating substrates, wherein one insulating substrate is provided. Above, switching elements arranged in a matrix, first and second wirings connected to the switching elements, and an upper surface and a slope arranged so as to cover the first and second wirings. An interlayer insulating film having a surface,
First and second electrodes for applying an electric field to the liquid crystal layer, one and the other of which are electrically connected to the switching element, are formed. The first and second electrodes are formed so as to cover the upper surface and the inclined surface of the interlayer insulating film, thereby applying the electric field to the liquid crystal layer substantially parallel to the insulating substrate, This achieves the above object.
【００１１】前記層間絶縁膜の材料は樹脂であってもよ
い。The material of the interlayer insulating film may be resin.
【００１２】前記樹脂は感光性アクリル樹脂であっても
よい。The resin may be a photosensitive acrylic resin.
【００１３】前記層間絶縁膜の厚さは、１〜１０μｍで
あってもよい。The thickness of the interlayer insulating film may be 1 to 10 μm.
【００１４】前記第一および第二の電極の他方は、前記
層間絶縁膜を介して、前記第二の配線を覆っていてもよ
い。The other of the first and second electrodes may cover the second wiring via the interlayer insulating film.
【００１５】前記層間絶縁膜の厚さは、前記液晶層の厚
さの３０％〜１００％であってもよい。The thickness of the interlayer insulating film may be 30% to 100% of the thickness of the liquid crystal layer.
【００１６】前記層間絶縁膜の前記上面および傾斜面を
覆うように形成された前記第一および第二の電極を、前
記一対の絶縁性基板の間のスペーサとして用いてもよ
い。The first and second electrodes formed so as to cover the upper surface and the inclined surface of the interlayer insulating film may be used as a spacer between the pair of insulating substrates.
【００１７】[0017]
【発明の実施の形態】以下、本発明の液晶表示装置を図
面を参照しながら説明する。なお、図面を通して、同じ
構成要素には同じ参照符号を付している。DETAILED DESCRIPTION OF THE INVENTION A liquid crystal display device of the present invention will be described below with reference to the drawings. Throughout the drawings, the same components are designated by the same reference numerals.
【００１８】図３は本発明の液晶表示装置の構成を示す
図であり、ＴＦＴ側基板の１画素分に相当する。（ａ）
は上から見た図、（ｂ）は図３（ａ）のＡ−Ａ’線に沿
った断面図である。FIG. 3 is a diagram showing the structure of the liquid crystal display device of the present invention, which corresponds to one pixel of the TFT side substrate. (A)
3B is a view from above, and FIG. 3B is a cross-sectional view taken along the line AA ′ of FIG.
【００１９】本発明の液晶表示装置は、上述した従来の
横電界型液晶表示装置とは異なり、図３（ａ）、（ｂ）
に示すように、絶縁膜７の上にゲート配線１、データ配
線２、および第一ドレイン電極４ａを含むＴＦＴ８を形
成し、その上に層間絶縁膜１０を介して、液晶層に電界
を印加するための第二ドレイン電極４ｂおよび対向電極
５を設けている。基板６ａ上の層間絶縁膜１０は、第二
ドレイン電極４ｂおよび対向電極５が形成されるべき部
分に、基板６ａに対して傾斜した面を有するように形成
されており、第二ドレイン電極４ｂおよび対向電極５
は、層間絶縁膜１０の上面および傾斜面を覆うように形
成されている。また、第二ドレイン電極４ｂは、層間絶
縁膜１０に設けられたコンタクトホール１１ａを介して
第一ドレイン電極４ａに電気的に接続されている。The liquid crystal display device of the present invention is different from the above-mentioned conventional horizontal electric field type liquid crystal display device, as shown in FIGS. 3 (a) and 3 (b).
As shown in, a TFT 8 including the gate wiring 1, the data wiring 2, and the first drain electrode 4a is formed on the insulating film 7, and an electric field is applied to the liquid crystal layer via the interlayer insulating film 10. A second drain electrode 4b and a counter electrode 5 are provided for this purpose. The interlayer insulating film 10 on the substrate 6a is formed in a portion where the second drain electrode 4b and the counter electrode 5 are to be formed so as to have a surface inclined with respect to the substrate 6a. Counter electrode 5
Are formed so as to cover the upper surface and the inclined surface of the interlayer insulating film 10. The second drain electrode 4b is electrically connected to the first drain electrode 4a via a contact hole 11a formed in the interlayer insulating film 10.
【００２０】図３（ａ）、（ｂ）に示す構造のＴＦＴ基
板は、以下のようにして形成される。The TFT substrate having the structure shown in FIGS. 3A and 3B is formed as follows.
【００２１】まず、図１（ａ）、（ｂ）に示すように、
絶縁性基板６ａ上に、Ｔａ等からなるゲート配線１を形
成した後、ＳｉＮｘ等からなる絶縁膜７を形成し、その
上にデータ配線２およびＴＦＴ８等を従来と同様のプロ
セスで形成する。絶縁性基板６ａとしてはガラス基板を
用いることができ、またゲート配線１およびデータ配線
２としてはＴａ等を用いることができる。ＴＦＴ８は、
ゲート配線１の一部分をゲート電極、データ配線２の突
起部２ａをソース電極とし、データ配線２と同じ膜から
形成された導電片４ａをドレイン電極としている。ま
た、データ配線２および導電片４ａ（第一ドレイン電
極）を形成する際に同時に、導電片１２がゲート配線１
と重なる位置に形成される。この導電片１２は補助容量
を形成する電極として機能する。First, as shown in FIGS. 1 (a) and 1 (b),
After the gate wiring 1 made of Ta or the like is formed on the insulating substrate 6a, the insulating film 7 made of SiNx or the like is formed, and the data wiring 2 and the TFT 8 etc. are formed thereon by the same process as the conventional one. A glass substrate can be used as the insulating substrate 6a, and Ta or the like can be used as the gate wiring 1 and the data wiring 2. TFT8 is
A part of the gate wiring 1 is used as a gate electrode, the projection 2a of the data wiring 2 is used as a source electrode, and the conductive piece 4a formed of the same film as the data wiring 2 is used as a drain electrode. Further, at the same time when the data wiring 2 and the conductive piece 4a (first drain electrode) are formed, the conductive piece 12 becomes the gate wiring 1
Is formed at a position overlapping with. The conductive piece 12 functions as an electrode forming an auxiliary capacitance.
【００２２】次に、その一部がデータ配線２の上方に位
置するように、層間絶縁膜１０を形成する。層間絶縁膜
１０には、図２（ａ）、（ｂ）に示すように、第一ドレ
イン電極４ａと第二ドレイン電極４ｂとの電気的接触、
および補助容量電極１２と第二ドレイン電極４ｂとの電
気的接触をとるために、コンタクトホール１１ａ、１１
ｂを形成する必要がある。そこで、本発明の液晶表示装
置では、数μｍの厚さで形成するのが容易であること、
しかも誘電率が窒化シリコンの半分以下であるために、
配線を層間絶縁膜を介して重畳させたときに配線間に形
成される寄生容量が小さいこと等から、樹脂を層間絶縁
膜の材料として用いる。特に、樹脂の中でも感光性アク
リル樹脂を層間絶縁膜として用いる場合には、液状の樹
脂材料をスピン塗布法により基板６ａに塗布した後、フ
ォトリソ工程にて露光し、アルカリ性溶液による現像を
行うことによりパターニングすることによりコンタクト
ホールを形成することができ、層間絶縁膜の成膜とパタ
ーニングを同時に行うことができるという長所がある。Next, the interlayer insulating film 10 is formed so that a part thereof is located above the data wiring 2. The interlayer insulating film 10 is electrically contacted with the first drain electrode 4a and the second drain electrode 4b, as shown in FIGS.
In order to make electrical contact between the auxiliary capacitance electrode 12 and the second drain electrode 4b, the contact holes 11a, 11
It is necessary to form b. Therefore, in the liquid crystal display device of the present invention, it is easy to form it with a thickness of several μm,
Moreover, because the dielectric constant is less than half that of silicon nitride,
Resin is used as a material for the interlayer insulating film because the parasitic capacitance formed between the wires when the wires are overlapped with each other via the interlayer insulating film is small. In particular, in the case of using a photosensitive acrylic resin as the interlayer insulating film among the resins, by applying a liquid resin material to the substrate 6a by a spin coating method, exposing it in a photolithography process, and developing it with an alkaline solution. The contact hole can be formed by patterning, and there is an advantage that the interlayer insulating film can be formed and patterned simultaneously.
【００２３】上述したようにして層間絶縁膜１０を形成
した後、第二ドレイン電極４ｂおよび対向電極５を図３
（ｂ）に示すように、層間絶縁膜１０の上面および傾斜
面を覆うように形成する。第二ドレイン電極４ｂおよび
対向電極５の材料としてはＴａ等が用いられ得る。対向
電極５は、図３（ｂ）に示すようにデータ配線２の上方
に位置する層間絶縁膜１０を覆うように形成される。し
たがって、対向電極５はデータ配線２に完全に重なるこ
とになる。After the interlayer insulating film 10 is formed as described above, the second drain electrode 4b and the counter electrode 5 are formed in FIG.
As shown in (b), it is formed so as to cover the upper surface and the inclined surface of the interlayer insulating film 10. As a material for the second drain electrode 4b and the counter electrode 5, Ta or the like can be used. The counter electrode 5 is formed so as to cover the interlayer insulating film 10 located above the data line 2 as shown in FIG. Therefore, the counter electrode 5 completely overlaps the data line 2.
【００２４】このようにして形成されたＴＦＴ側基板の
表面に配向膜１４を形成し、ラビング処理を施す。また
絶縁性基板６ｂの表面にも配向膜１３を形成し、同様に
ラビング処理を施す。この際、液晶分子の長軸方向が第
二ドレイン電極４ｂおよび対向電極５と４５度の角度を
なして配向するようにラビング方向を決める。その後、
両基板を貼り合わせ、両基板間に液晶材料を封入するこ
とにより液晶層９を形成すると、液晶表示装置が完成す
る。なお、絶縁性基板６ｂの表面には、配向膜１３の形
成に先立って、カラーフィルターを形成してもよい。An alignment film 14 is formed on the surface of the TFT-side substrate thus formed, and a rubbing process is performed. Further, the alignment film 13 is formed on the surface of the insulating substrate 6b, and the rubbing process is performed in the same manner. At this time, the rubbing direction is determined so that the major axis direction of the liquid crystal molecules is aligned at an angle of 45 degrees with the second drain electrode 4b and the counter electrode 5. afterwards,
The liquid crystal display device is completed by bonding the two substrates and encapsulating the liquid crystal material between the two substrates to form the liquid crystal layer 9. A color filter may be formed on the surface of the insulating substrate 6b prior to forming the alignment film 13.
【００２５】以上のようにして形成された図３（ａ）、
（ｂ）に示す構造のＴＦＴ側基板を有する液晶表示装置
では、従来の横電界型液晶表示装置とは異なり、第二ド
レイン電極４ｂおよび対向電極５を液晶層９の深さ方向
に対して大きく形成することができる。このため、層間
絶縁膜１０の厚さを適切に設定することにより、図４に
示すように基板６ａに対してほぼ完全に平行な電界を液
晶分子に印加することができる。本願発明者らの実験に
よれば、層間絶縁膜１０の厚さ（上面までの高さ）を、
液晶層９の厚さの３０％〜１００％、好ましくは６０％
〜１００％とすれば、基板に対してほぼ完全に平行な電
界を液晶分子に印加することができることが確認されて
いる。典型的な液晶表示装置では、液晶層９の厚さ、す
なわち基板６ａと基板６ｂとの間隔は３μｍ〜１０μｍ
の範囲とされるので、それを考慮すると層間絶縁膜１０
の厚さは１μｍ〜１０μｍ、好ましくは２μｍ〜６μｍ
に設定すればよい。これにより、従来の横電界型液晶表
示装置よりもさらに広い視野角を持つ液晶表示装置を得
ることができる。FIG. 3A, which is formed as described above,
In the liquid crystal display device having the TFT-side substrate having the structure shown in FIG. 6B, unlike the conventional horizontal electric field type liquid crystal display device, the second drain electrode 4b and the counter electrode 5 are made larger in the depth direction of the liquid crystal layer 9. Can be formed. Therefore, by appropriately setting the thickness of the interlayer insulating film 10, an electric field almost completely parallel to the substrate 6a can be applied to the liquid crystal molecules as shown in FIG. According to the experiments by the inventors of the present application, the thickness (height to the upper surface) of the interlayer insulating film 10 is
30% to 100% of the thickness of the liquid crystal layer 9, preferably 60%
It has been confirmed that an electric field almost completely parallel to the substrate can be applied to the liquid crystal molecules when ˜100%. In a typical liquid crystal display device, the thickness of the liquid crystal layer 9, that is, the distance between the substrate 6a and the substrate 6b is 3 μm to 10 μm.
Therefore, considering that, the interlayer insulating film 10
Has a thickness of 1 μm to 10 μm, preferably 2 μm to 6 μm
Should be set to. This makes it possible to obtain a liquid crystal display device having a wider viewing angle than the conventional horizontal electric field type liquid crystal display device.
【００２６】また、層間絶縁膜１０を介してデータ配線
２に対向電極５を重ねることにより、従来の横電界型液
晶表示装置よりも開口率を高くすることができる。しか
も、データ配線２は対向電極５によって完全に覆われて
しまうので、図６に示すように従来の横電界型液晶表示
装置で問題であった、データ配線がドレイン電極に及ぼ
す雑音電界の影響をほぼ完全に削減することができる。By laminating the counter electrode 5 on the data line 2 with the interlayer insulating film 10 interposed therebetween, the aperture ratio can be made higher than that of the conventional lateral electric field type liquid crystal display device. Moreover, since the data line 2 is completely covered by the counter electrode 5, the influence of the noise electric field exerted on the drain electrode by the data line, which is a problem in the conventional horizontal electric field type liquid crystal display device, as shown in FIG. It can be reduced almost completely.
【００２７】さらに、本発明の液晶表示装置において
は、液晶層を挟持する一対の基板のいずれにも透明電極
を設ける必要がない。したがって、縦電界型液晶表示装
置には必要不可欠であった透明電極を形成する工程を削
減することができる。Further, in the liquid crystal display device of the present invention, it is not necessary to provide a transparent electrode on any of the pair of substrates sandwiching the liquid crystal layer. Therefore, the step of forming the transparent electrode, which is essential for the vertical electric field type liquid crystal display device, can be omitted.
【００２８】また、本発明においては対向基板上に対向
電極などの導電膜が形成されていないので、上述したよ
うにブロック状に形成された層間絶縁膜１０の上面およ
び傾斜面を覆うように形成された対向電極５および第二
ドレイン電極４ｂを、図７に示すようにＴＦＴ側基板と
対向基板との間の間隔を保持するためのスペーサとして
用いることもできる。Further, in the present invention, since the conductive film such as the counter electrode is not formed on the counter substrate, it is formed so as to cover the upper surface and the inclined surface of the interlayer insulating film 10 formed in the block shape as described above. The counter electrode 5 and the second drain electrode 4b thus formed can also be used as a spacer for maintaining a space between the TFT side substrate and the counter substrate as shown in FIG.
【００２９】なお、本実施形態では、Cs on Gate方式の
液晶表示装置を例として本発明を説明したが、Cs on Co
mmon方式の液晶表示装置に本発明を適用した場合にも同
様の効果を得ることができる。In the present embodiment, the present invention has been described by taking the Cs on Gate type liquid crystal display device as an example.
Similar effects can be obtained when the present invention is applied to a mmon type liquid crystal display device.
【００３０】[0030]
【発明の効果】以上説明したように、本発明の液晶表示
装置では、層間絶縁膜の上面および傾斜面を完全に覆う
ように、液晶層に電界を印加するための電極を形成して
いる。このため、液晶層中の液晶分子に基板面に対して
ほぼ完全に平行に電界を印加することができる。さら
に、電界印加用の電極の一方、つまり対向電極をデータ
配線を完全に覆うように形成しているので、開口率を上
げることができると同時に、データ配線と電界印加用の
電極との間の雑音電界が表示に影響を及ぼすのを防ぐこ
とができる。したがって、本発明によれば、従来よりも
高開口率でしかも広視野角の横電界型液晶表示装置を実
現することができる。これにより、低消費電力で、高輝
度、しかも広視野角の液晶表示装置を製造することが可
能になる。As described above, in the liquid crystal display device of the present invention, the electrode for applying the electric field is formed in the liquid crystal layer so as to completely cover the upper surface and the inclined surface of the interlayer insulating film. Therefore, an electric field can be applied to the liquid crystal molecules in the liquid crystal layer almost completely parallel to the substrate surface. Further, since one of the electrodes for applying the electric field, that is, the counter electrode is formed so as to completely cover the data wiring, the aperture ratio can be increased and at the same time, the area between the data wiring and the electrode for applying the electric field can be increased. It is possible to prevent the noise electric field from affecting the display. Therefore, according to the present invention, a lateral electric field type liquid crystal display device having a higher aperture ratio and a wider viewing angle than ever can be realized. This makes it possible to manufacture a liquid crystal display device with low power consumption, high brightness, and a wide viewing angle.
【００３１】さらに、対向基板上には対向電極等の導電
膜が形成されていないので、層間絶縁膜の厚さを適切に
設定することにより、層間絶縁膜とその上面および傾斜
面に形成した電極とをスペーサとして用いることもでき
る。Further, since a conductive film such as a counter electrode is not formed on the counter substrate, the interlayer insulation film and the electrodes formed on the upper surface and the inclined surface thereof are set by appropriately setting the thickness of the interlayer insulation film. And can also be used as spacers.
【図１】 本発明の液晶表示装置のＴＦＴ側基板（アク
ティブマトリクス基板）の作製方法を説明する図であ
り、（ａ）は平面図、（ｂ）はＡ−Ａ’線に沿った断面
図である。1A and 1B are diagrams illustrating a method of manufacturing a TFT side substrate (active matrix substrate) of a liquid crystal display device of the present invention, in which (a) is a plan view and (b) is a cross-sectional view taken along line AA ′. Is.
【図２】 本発明の液晶表示装置のＴＦＴ側基板（アク
ティブマトリクス基板）の作製方法を説明する図であ
り、（ａ）は平面図、（ｂ）はＡ−Ａ’線に沿った断面
図である。2A and 2B are diagrams illustrating a method for manufacturing a TFT-side substrate (active matrix substrate) of the liquid crystal display device of the present invention, in which (a) is a plan view and (b) is a cross-sectional view taken along line AA ′. Is.
【図３】 本発明の液晶表示装置のＴＦＴ側基板（アク
ティブマトリクス基板）の構成を示す図であり、（ａ）
は平面図、（ｂ）はＡ−Ａ’線に沿った断面図である。FIG. 3 is a diagram showing a configuration of a TFT side substrate (active matrix substrate) of the liquid crystal display device of the present invention, FIG.
Is a plan view and (b) is a sectional view taken along the line AA ′.
【図４】 本発明の液晶表示装置において液晶層に印加
される電界を示す図である。FIG. 4 is a diagram showing an electric field applied to a liquid crystal layer in the liquid crystal display device of the present invention.
【図５】 従来の横電界型液晶表示装置のＴＦＴ側基板
の構成を示す図であり、（ａ）は平面図、（ｂ）はＢ−
Ｂ’線に沿った断面図である。5A and 5B are diagrams showing a configuration of a TFT-side substrate of a conventional horizontal electric field type liquid crystal display device, in which FIG. 5A is a plan view and FIG.
It is sectional drawing which followed the B'line.
【図６】 従来の横電界型液晶表示装置において液晶層
に印加される電界を示す図である。FIG. 6 is a diagram showing an electric field applied to a liquid crystal layer in a conventional horizontal electric field type liquid crystal display device.
【図７】 本発明の液晶表示装置のＴＦＴ側基板の改変
例の構成を示す平面図である。FIG. 7 is a plan view showing the configuration of a modified example of the TFT side substrate of the liquid crystal display device of the present invention.
１ ゲート配線 ２ データ配線 ４ａ 第一ドレイン電極 ４ｂ 第二ドレイン電極 ５ 対向電極 ６ａ、６ｂ 絶縁性基板 ７ ゲート絶縁膜 ８ ＴＦＴ ９ 液晶層 １０ 層間絶縁膜 １１ａ、１１ｂ コンタクトホール １２ 補助容量電極 １３、１４ 配向膜 １５ 信号電界 １６ 雑音電界 1 gate wiring 2 data wiring 4a first drain electrode 4b second drain electrode 5 counter electrodes 6a, 6b insulating substrate 7 gate insulating film 8 TFT 9 liquid crystal layer 10 interlayer insulating film 11a, 11b contact hole 12 auxiliary capacitance electrode 13, 14 Alignment film 15 Signal electric field 16 Noise electric field
Claims (7)
に挟持された液晶層とを有する液晶表示装置であって、
一方の絶縁性基板上には、 マトリクス状に配置されているスイッチング素子と、 該スイッチング素子に接続された第一および第二の配線
と、 該第一および第二の配線を覆うように配置された、上面
および傾斜面を有する層間絶縁膜と、 該液晶層に電界を印加するための第一および第二の電極
であって、一方が該スイッチング素子と電気的に接続さ
れている第一および第二の電極と、が形成されており、 該第一および第二の電極は該層間絶縁膜の該上面および
傾斜面を覆うように形成されており、それにより該絶縁
性基板に対して実質的に平行に該電界を該液晶層に印加
する、液晶表示装置。1. A liquid crystal display device comprising a pair of insulating substrates and a liquid crystal layer sandwiched between the pair of insulating substrates,
On one insulating substrate, switching elements arranged in a matrix, first and second wirings connected to the switching element, and arranged so as to cover the first and second wirings. Also, an interlayer insulating film having an upper surface and an inclined surface, and first and second electrodes for applying an electric field to the liquid crystal layer, one of which is electrically connected to the switching element. A second electrode is formed, and the first and second electrodes are formed so as to cover the upper surface and the inclined surface of the interlayer insulating film, whereby the first electrode and the second electrode are substantially formed with respect to the insulating substrate. Liquid crystal display device in which the electric field is applied to the liquid crystal layer in a substantially parallel manner.
求項１に記載の液晶表示装置。2. The liquid crystal display device according to claim 1, wherein the material of the interlayer insulating film is resin.
請求項２に記載の液晶表示装置。3. The resin is a photosensitive acrylic resin,
The liquid crystal display device according to claim 2.
である、請求項１から３のいずれか１つに記載の液晶表
示装置。4. The thickness of the interlayer insulating film is 1 to 10 μm.
The liquid crystal display device according to any one of claims 1 to 3, which is
記層間絶縁膜を介して、前記第二の配線を覆っている、
請求項１から４のいずれか１つに記載の液晶表示装置。5. The other of the first and second electrodes covers the second wiring via the interlayer insulating film,
The liquid crystal display device according to claim 1.
厚さの３０％〜１００％である、請求項１、２、３およ
び５のいずれか１つに記載の液晶表示装置。6. The liquid crystal display device according to claim 1, wherein the thickness of the interlayer insulating film is 30% to 100% of the thickness of the liquid crystal layer.
を覆うように形成された前記第一および第二の電極を、
前記一対の絶縁性基板の間のスペーサとして用いた、請
求項１から６のいずれか１つに記載の液晶表示装置。7. The first and second electrodes formed so as to cover the upper surface and the inclined surface of the interlayer insulating film,
The liquid crystal display device according to claim 1, which is used as a spacer between the pair of insulating substrates.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6354396A JP3174497B2 (en) | 1996-03-19 | 1996-03-19 | Liquid crystal display |
| US08/806,928 US5852485A (en) | 1996-02-27 | 1997-02-26 | Liquid crystal display device and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6354396A JP3174497B2 (en) | 1996-03-19 | 1996-03-19 | Liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09258265A true JPH09258265A (en) | 1997-10-03 |
| JP3174497B2 JP3174497B2 (en) | 2001-06-11 |
Family
ID=13232249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6354396A Expired - Lifetime JP3174497B2 (en) | 1996-02-27 | 1996-03-19 | Liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3174497B2 (en) |
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