JPH09255491A - Zinc oxide thin film electrode structure using oxygen closing packing plane of poly-crystal oxide thin film and its production - Google Patents
Zinc oxide thin film electrode structure using oxygen closing packing plane of poly-crystal oxide thin film and its productionInfo
- Publication number
- JPH09255491A JPH09255491A JP33976696A JP33976696A JPH09255491A JP H09255491 A JPH09255491 A JP H09255491A JP 33976696 A JP33976696 A JP 33976696A JP 33976696 A JP33976696 A JP 33976696A JP H09255491 A JPH09255491 A JP H09255491A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxygen
- oxide thin
- zno
- electrode structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は多結晶酸化薄膜の酸
素最密充填面を用いたＺｎＯ薄膜電極構造体及びその製
造方法に係り、特にガラス上に成膜されている多結晶酸
化薄膜の酸素最密充填面の酸素配列を用いたＺｎＯ薄膜
電極構造体及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ZnO thin film electrode structure using an oxygen close-packed surface of a polycrystalline oxide thin film and a method for manufacturing the same, and more particularly to oxygen of a polycrystalline oxide thin film formed on glass. The present invention relates to a ZnO thin film electrode structure using oxygen arrangement of the closest packing surface and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】ガラス基板上に成膜させた多結晶ＺｎＯ
薄膜はガラスを構成する原子の無秩序に基づいて低い結
晶性を示すため、従来、ＺｎＯ薄膜の結晶性を向上させ
るためサファイア単結晶基板やＳｉＣ単結晶基板を用い
た方法などが報告されている。しかし、単結晶基板にＺ
ｎＯ薄膜を形成した場合には、基板の不透明性のためＺ
ｎＯ薄膜の光学的特性である透明性が消えるので、透明
電極としては使用できない。従って、前述したように単
結晶基板を使用して形成したＺｎＯ薄膜は基板の不透過
性によりＬＣＤ（Liquid Crystal Display) のような平
板ディスプレー或は太陽電池のような装置の透明電極と
して使用できない。2. Description of the Related Art Polycrystalline ZnO formed on a glass substrate
Since a thin film exhibits low crystallinity based on disorder of atoms constituting glass, conventionally, a method using a sapphire single crystal substrate or a SiC single crystal substrate for improving the crystallinity of a ZnO thin film has been reported. However, Z
When an nO thin film is formed, Z is due to the opacity of the substrate.
Since the optical characteristic of the nO thin film, transparency, disappears, it cannot be used as a transparent electrode. Therefore, the ZnO thin film formed using the single crystal substrate cannot be used as a transparent electrode of a flat panel display such as an LCD (Liquid Crystal Display) or a device such as a solar cell due to the impermeability of the substrate.
【０００３】[0003]
【発明が解決しょうとする課題】本発明は多結晶酸化薄
膜の酸素最密充填面を用いたＺｎＯ薄膜電極構造体及び
その製造方法を提供することにその目的がある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a ZnO thin film electrode structure using an oxygen close-packed surface of a polycrystalline oxide thin film and a method for manufacturing the same.
【０００４】[0004]
【課題を解決するための手段】前記目的を達成するため
本発明による多結晶酸化薄膜の酸素最密充填面を用いた
ＺｎＯ薄膜電極構造体は、基板と、前記基板上に成膜さ
れている立方構造または類似立方構造の酸化物薄膜層
と、前記酸化物薄膜層上に形成されているＺｎＯ層を具
備することを特徴とする。In order to achieve the above-mentioned object, a ZnO thin film electrode structure using an oxygen close-packed surface of a polycrystalline oxide thin film according to the present invention is formed on a substrate and the substrate. It is characterized by comprising an oxide thin film layer having a cubic structure or a similar cubic structure and a ZnO layer formed on the oxide thin film layer.
【０００５】前記本発明の電極構造体において、前記酸
化物薄膜層の素材は立方構造を有するＩｎ2 Ｏ3 、立方
構造または類似立方構造を有する物質を選択することが
望ましい。In the electrode structure of the present invention, the material of the oxide thin film layer is preferably selected from In 2 O 3 having a cubic structure, a substance having a cubic structure or a similar cubic structure.
【０００６】また、前記目的を達成するため本発明によ
る電極構造体の製造方法は、基板に立方構造または類似
立方構造を有する酸化物薄膜を形成する段階と、前記多
結晶酸化物薄膜上に結晶性に優れたＺｎＯ薄膜を形成す
る段階を含む。In order to achieve the above object, the method of manufacturing an electrode structure according to the present invention comprises the steps of forming an oxide thin film having a cubic structure or a similar cubic structure on a substrate, and forming a crystal on the polycrystalline oxide thin film. Forming a ZnO thin film having excellent properties.
【０００７】[0007]
【本発明の実施の形態】以下、添付した図面に基づき本
発明の実施例を詳しく説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
【０００８】図１を参照すれば、１は基板、バッファ層
の機能を有するものであって、Ｉｎ 2 Ｏ3 を含む立方構
造または類似立方構造の酸化物薄膜層である。そして、
３はＺｎＯ薄膜層である。Referring to FIG. 1, reference numeral 1 denotes a substrate and a buffer layer.
Which has the function of TwoOThreeCubic structure including
It is an oxide thin film layer having a cubic structure or a similar cubic structure. And
3 is a ZnO thin film layer.
【０００９】六方構造のＺｎＯの（０００２）面上の酸
素は正三角形の頂点に位置し、隣接酸素との距離はＺｎ
Ｏの格子定数（a ZnO ＝０．３２５０）と同じ０．３２
５０ｎｍであり、ＡＢＡＢ、即ち交番的な積層構造を有
する。バッファ層として使用される答軸晶系（bixbyit
e）立方構造を有するＩｎ2 Ｏ3 はＡＢＣＡＢＣ、即ち
３つの層が交番的に積層されている構造を有し、各層の
酸素は同一配列状態を有し、酸素最密充填面である（１
１１）面の酸素間の平均距離は０．３３５３ｎｍであ
る。従って、Ｉｎ2 Ｏ3 の酸素最密充填面である（１１
１）面とＺｎＯの酸素最密充填面である酸素間不整合は
僅か３％なので〈１１１〉配向性を有するＩｎ2 Ｏ3 薄
膜は〈０００１〉の配向性を有するＺｎＯ薄膜の成長を
容易にする良好な酸素層を提供しうる。これはＺｎＯ薄
膜の酸素最密充填面がＩｎ2 Ｏ3 薄膜の酸素最密充填面
の影響を受けるからである。従って、ガラス基板上に成
膜したＺｎＯ薄膜の結晶性向上方法は多結晶Ｉｎ2 Ｏ3
のみならず、〈１１１〉配向性を有する立方構造或は類
似立方構造を有する酸化物薄膜の酸素最密充填構造を用
いても良い。Oxygen on the (0002) plane of hexagonal ZnO is located at the apex of an equilateral triangle, and the distance from adjacent oxygen is Zn.
Same as the lattice constant of O (a ZnO = 0.3250) 0.32
It has a thickness of 50 nm and has an ABAB, that is, an alternating laminated structure. Bixbyit system used as a buffer layer
e) In 2 O 3 having a cubic structure has ABCABC, that is, a structure in which three layers are alternately stacked, oxygen in each layer has the same arrangement state, and is an oxygen closest packing surface (1
The average distance between oxygen on the (11) plane is 0.3353 nm. Therefore, it is the surface of In 2 O 3 that is closest to oxygen (11)
1) Since the mismatch between the plane and the oxygen closest packed surface of ZnO is only 3%, the In 2 O 3 thin film having the <111> orientation facilitates the growth of the ZnO thin film having the <0001> orientation. It can provide a good oxygen layer. This is because the close-packed oxygen surface of the ZnO thin film is affected by the close-packed oxygen surface of the In 2 O 3 thin film. Therefore, a method for improving the crystallinity of a ZnO thin film formed on a glass substrate is a polycrystalline In 2 O 3
In addition, an oxygen close-packed structure of an oxide thin film having a cubic structure having a <111> orientation or a similar cubic structure may be used.
【００１０】また、多結晶Ｉｎ2 Ｏ3 薄膜は光の透過性
のよい物質なのでＺｎＯ薄膜をＩｎ2 Ｏ3 薄膜上に成膜
しても光透過には問題ないのでＬＣＤのような平板ディ
スプレーや太陽電池などの透明電極に使用できる。Further, since the polycrystalline In 2 O 3 thin film has a good light-transmitting property, even if a ZnO thin film is formed on the In 2 O 3 thin film, there is no problem in light transmission, so that a flat panel display such as LCD or It can be used for transparent electrodes such as solar cells.
【００１１】本発明によるＺｎＯ薄膜の結晶性向上法は
単結晶だけでなくガラス基板上でＺｎＯ薄膜をエピタキ
シァル成長させる場合、非常に有用な方法となる。一般
的にエピタキシァル成長は基板と積層薄膜の格子定数の
不整合の最少化によるものであるが、２面間の酸素配列
と酸素間距離を考慮した酸化物薄膜の成長法はＧａＮ薄
膜を成長させるためのバッファ層としてのＺｎＯ薄膜の
製造に非常に有用である。The method for improving the crystallinity of a ZnO thin film according to the present invention is a very useful method when epitaxially growing a ZnO thin film on a glass substrate as well as a single crystal. In general, epitaxial growth is based on minimizing the mismatch of the lattice constant between the substrate and the laminated thin film, but the growth method of the oxide thin film considering the oxygen arrangement between the two planes and the oxygen distance is to grow the GaN thin film. It is very useful for manufacturing a ZnO thin film as a buffer layer for
【００１２】本発明はＩｎ2 Ｏ3 薄膜の酸素最密充填面
を用いて単結晶基板やそうでないガラス基板上で〈００
０１〉配向の成長特性に優れたＺｎＯ薄膜を製造するた
めの方法である。The present invention uses the close-packed surface of oxygen of In 2 O 3 thin film to form <00 on a single crystal substrate or a glass substrate which is not.
This is a method for producing a ZnO thin film having excellent 01> orientation growth characteristics.
【００１３】本発明の電極構造体の制作方法を説明すれ
ば次のようである。The manufacturing method of the electrode structure of the present invention will be described as follows.
【００１４】図２に示されるように、スパッタリング方
法でガラス基板１上に〈１１１〉配向特性に優れたＩｎ
2 Ｏ3 薄膜２を形成する。As shown in FIG. 2, In having excellent <111> orientation characteristics was formed on the glass substrate 1 by the sputtering method.
2 O 3 thin film 2 is formed.
【００１５】図３に示されるように、Ｉｎ2 Ｏ3 薄膜２
上にアルゴンと酸素の混合ガスを用いてＺｎＯ薄膜３を
製造する。As shown in FIG. 3, the In 2 O 3 thin film 2
A ZnO thin film 3 is manufactured by using a mixed gas of argon and oxygen.
【００１６】以上のような製造方法によれば、〈１１
１〉配向特性に優れたＩｎ2 Ｏ3 薄膜の酸素最密充填面
である（１１１）面はＺｎＯ薄膜３の酸素最密充填面で
ある（０００２）面がよく成長しうる優秀な酸素層を提
供する。従って、前述したようにbixbyiteＩｎ2 Ｏ3 の
（１１１）面とウルツ（wurzeit ）ＺｎＯの（０００
２）面の酸素間距離の差は約３％であるので、ガラス基
板上で結晶性と〈０００１〉配向の成長特性に優れたＺ
ｎＯ薄膜の形成が可能である。According to the above manufacturing method, <11
1) The (111) plane, which is the oxygen close-packed surface of the In 2 O 3 thin film having excellent orientation characteristics, is the oxygen close-packed surface (0002) plane of the ZnO thin film 3, which is an excellent oxygen layer that can grow well. provide. Therefore, as described above, (111) plane of bixbyiteIn 2 O 3 and (000 of wurzeit ZnO)
2) Since the difference between the oxygen distances in the plane is about 3%, Z having excellent crystallinity and <0001> orientation growth characteristics on the glass substrate.
It is possible to form an nO thin film.
【００１７】即ち、ガラス基板上に成膜した多結晶Ｉｎ
2 Ｏ3 薄膜上にＺｎＯ薄膜を成長させることにより、Ｚ
ｎＯ薄膜の電気的、光学的特性の損失なしに結晶性と
〈０００１〉配向特性に優れた薄膜を製造しうる。That is, polycrystalline In deposited on a glass substrate
By growing a ZnO thin film on the 2 O 3 thin film, Z
It is possible to manufacture a thin film having excellent crystallinity and <0001> orientation properties without loss of electrical and optical properties of the nO thin film.
【００１８】[0018]
【発明の効果】このような本発明の電極構造体はＬＣＤ
のような平板ディスプレーまたは太陽電池等に適用で
き、良好なＺｎＯの結晶性により良質の製品が得られ
る。The electrode structure of the present invention is an LCD.
It can be applied to such flat panel displays or solar cells, and a good quality product can be obtained due to the excellent crystallinity of ZnO.
【図１】本発明による電極構造体の概略断面図である。FIG. 1 is a schematic sectional view of an electrode structure according to the present invention.
【図２】本発明による電極構造体の製造方法の工程図で
ある。FIG. 2 is a process drawing of a method for manufacturing an electrode structure according to the present invention.
【図３】本発明による電極構造体の製造方法の工程図で
ある。FIG. 3 is a process drawing of a method for manufacturing an electrode structure according to the present invention.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/28 ３０１ Ｈ０１Ｌ 21/28 ３０１Ｚ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI Technical display location H01L 21/28 301 H01L 21/28 301Z
Claims (4)
造の酸化物薄膜層と、 前記酸化物薄膜層上に形成されているＺｎＯ層を具備す
ることを特徴とする多結晶酸化薄膜の酸素最密充填面を
用いたＺｎＯ薄膜電極構造体。1. A substrate, an oxide thin film layer having a cubic structure or a similar cubic structure formed on the substrate, and a ZnO layer formed on the oxide thin film layer. A ZnO thin film electrode structure using an oxygen closest packing surface of a polycrystalline oxide thin film.
成膜されていることを特徴とする請求項１に記載の多結
晶酸化薄膜の酸素最密充填面を用いたＺｎＯ薄膜電極構
造体。2. A ZnO thin film electrode using an oxygen close-packed surface of a polycrystalline oxide thin film according to claim 1, wherein the material of the oxide thin film layer is formed of In 2 O 3. Structure.
薄膜を形成する段階と、 前記酸化物薄膜上にＺｎＯ薄膜を結晶成長法により形成
する段階を含むことを特徴とする多結晶酸化薄膜の酸素
最密充填面の酸素配列を用いたＺｎＯ薄膜電極構造体の
製造方法。3. A polycrystalline oxide thin film comprising: a step of forming a cubic or similar cubic oxide thin film on a substrate; and a step of forming a ZnO thin film on the oxide thin film by a crystal growth method. A method for manufacturing a ZnO thin film electrode structure using the oxygen arrangement of the oxygen closest packing surface.
ることを特徴とする請求項３に記載の多結晶酸化薄膜の
酸素最密充填面の酸素配列を用いたＺｎＯ薄膜電極構造
体の製造方法。4. The ZnO thin film electrode structure using the oxygen arrangement of the closest packed surface of oxygen of the polycrystalline oxide thin film according to claim 3, wherein the oxide thin film layer is formed of In 2 O 3. Manufacturing method.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR19950069786 | 1995-12-30 | ||
| KR95P69786 | 1995-12-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09255491A true JPH09255491A (en) | 1997-09-30 |
Family
ID=19448592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33976696A Pending JPH09255491A (en) | 1995-12-30 | 1996-12-19 | Zinc oxide thin film electrode structure using oxygen closing packing plane of poly-crystal oxide thin film and its production |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH09255491A (en) |
| DE (1) | DE19654717A1 (en) |
| FR (1) | FR2743091A1 (en) |
| GB (1) | GB2308919A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6500690B1 (en) | 1999-10-27 | 2002-12-31 | Kaneka Corporation | Method of producing a thin-film photovoltaic device |
| KR20040107318A (en) * | 2003-06-13 | 2004-12-20 | 재단법인 포항산업과학연구원 | Electrochemical Preparation Method of ZnO |
| JP2010050342A (en) * | 2008-08-22 | 2010-03-04 | National Institute For Materials Science | Amorphous base material |
| JP4622075B2 (en) * | 2000-10-03 | 2011-02-02 | 凸版印刷株式会社 | Transparent conductive material and method for producing the same |
| JP2012134467A (en) * | 2010-11-30 | 2012-07-12 | Semiconductor Energy Lab Co Ltd | Manufacturing method for semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4556407B2 (en) * | 2002-10-04 | 2010-10-06 | 住友金属鉱山株式会社 | Oxide transparent electrode film and method for producing the same, transparent conductive substrate, solar cell, and photodetector |
-
1996
- 1996-12-19 JP JP33976696A patent/JPH09255491A/en active Pending
- 1996-12-19 GB GB9626372A patent/GB2308919A/en not_active Withdrawn
- 1996-12-30 DE DE1996154717 patent/DE19654717A1/en not_active Withdrawn
- 1996-12-30 FR FR9616210A patent/FR2743091A1/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6500690B1 (en) | 1999-10-27 | 2002-12-31 | Kaneka Corporation | Method of producing a thin-film photovoltaic device |
| JP4622075B2 (en) * | 2000-10-03 | 2011-02-02 | 凸版印刷株式会社 | Transparent conductive material and method for producing the same |
| KR20040107318A (en) * | 2003-06-13 | 2004-12-20 | 재단법인 포항산업과학연구원 | Electrochemical Preparation Method of ZnO |
| JP2010050342A (en) * | 2008-08-22 | 2010-03-04 | National Institute For Materials Science | Amorphous base material |
| JP2012134467A (en) * | 2010-11-30 | 2012-07-12 | Semiconductor Energy Lab Co Ltd | Manufacturing method for semiconductor device |
| US9281358B2 (en) | 2010-11-30 | 2016-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US9634082B2 (en) | 2010-11-30 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2743091A1 (en) | 1997-07-04 |
| GB2308919A (en) | 1997-07-09 |
| GB9626372D0 (en) | 1997-02-05 |
| DE19654717A1 (en) | 1997-07-03 |
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