JPH09251169A - Display device, active matrix type display device and manufacturing method therefor - Google Patents

Display device, active matrix type display device and manufacturing method therefor

Info

Publication number
JPH09251169A
JPH09251169A JP5884296A JP5884296A JPH09251169A JP H09251169 A JPH09251169 A JP H09251169A JP 5884296 A JP5884296 A JP 5884296A JP 5884296 A JP5884296 A JP 5884296A JP H09251169 A JPH09251169 A JP H09251169A
Authority
JP
Japan
Prior art keywords
connection
display device
array substrate
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5884296A
Other languages
Japanese (ja)
Inventor
Nobuo Hayashi
信雄 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP5884296A priority Critical patent/JPH09251169A/en
Publication of JPH09251169A publication Critical patent/JPH09251169A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To prevent short circuit between electrodes removing, separating a short-circuit ring or rubbing during the handling of a display device, the contact of a metallic wire such as a tape carrier with a separated connecting conductor and the damage of elements in a display area due to the blind shot of light in separating the connecting conductor by an energy ray such as a laser beam. SOLUTION: In the manufacturing process of a display device having an optical modulating layer such as liquid crystal in a display area 12, when a connecting conductor 25 for short circuit ring provided for protecting wires and an electrode in the display area from static electricity is separated from a connecting electrode 24 with an external circuit, a protection film 27 of an insulating layer is formed in advance on the connecting electrode and the connecting conductor. When the connecting electrode 24 is separated from the connecting conductor 25 by radiating an energy ray such as a laser beam, the irradiating angle of light is inclined to the normal of the peripheral part 22 of an array substrate and oriented outward from the side of the display area.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は液晶、電界発光など
の表示装置およびその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, an electroluminescent display device, and a method for manufacturing the same.

【0002】[0002]

【従来の技術】液晶表示装置に代表される平面型表示装
置は、薄型、軽量、低消費電力の特徴をもつことから、
OA機器、TVなどの表示装置として、さらに投射型表
示装置として広く利用され、とくに各画素電極ごとにス
イッチング素子を配置したアクティブマトリクス型表示
装置は隣接画素間でクロストークのない良好な表示画像
が実現できるために利用度が拡大している。
2. Description of the Related Art A flat-panel display device represented by a liquid crystal display device is characterized by being thin, lightweight, and low in power consumption.
It is widely used as a display device for OA equipments, TVs and the like, and also as a projection display device. In particular, an active matrix display device in which a switching element is arranged for each pixel electrode produces a good display image without crosstalk between adjacent pixels. Utilization is expanding because it can be realized.

【0003】表示装置は電極を形成した2枚の基板を対
向させてその間に光変調層を挟持した構造を有してお
り、一方の基板を表示領域から延長して周辺部とし、こ
こに表示領域内の電極に信号を伝達するための外部回路
と接続する接続電極を形成している。
A display device has a structure in which two substrates having electrodes are opposed to each other and a light modulation layer is sandwiched between them. One substrate is extended from a display area to serve as a peripheral portion, and a display is performed here. A connection electrode is formed to connect to an external circuit for transmitting a signal to the electrode in the region.

【0004】表示領域内には、信号線、走査線、スイッ
チング素子、画素電極等が配置されており、製造工程中
の不所望な静電気の発生により、配線間やスイッチング
素子に放電が生じてこれらに損傷を与えることがあり、
このために、接続電極同志を相互に電気的に接続するシ
ョートリングと称する接続導体を設けて、組立て工程で
生じる損傷を防止するようにして装置の最終的な良品検
査の段階でこの接続導体を接続電極から切離して機能の
確認を行っている。
In the display area, signal lines, scanning lines, switching elements, pixel electrodes, etc. are arranged. Due to the generation of undesired static electricity during the manufacturing process, discharge is generated between wirings and switching elements. May damage the
For this reason, a connection conductor called a short ring for electrically connecting the connection electrodes to each other is provided to prevent damage caused in the assembly process, and this connection conductor is connected at the final inspection stage of the device. The function is confirmed by disconnecting from the connection electrode.

【0005】また、電極や接続電極、接続導体は製造の
容易さや良導電性の点から、アルミニウム(Al)また
はその合金を用いている。
Further, aluminum (Al) or its alloy is used for the electrodes, the connecting electrodes, and the connecting conductors from the viewpoint of ease of manufacture and good conductivity.

【0006】[0006]

【発明が解決しようとする課題】接続導体を接続電極か
ら切離す方法として、図7(a)(面取り前)、(b)
(面取り後)に示すように、アレイ基板101の周辺部
に設けた接続電極102を短絡する接続導体103を基
板端部とともに回転する砥石104により斜めに削りと
る面取り105によって除去する方法がある。しかし、
表示装置が大型になると面取り105を均一に行うこと
は難しく、また接続導体が柔らかいAl等で形成される
ために面取りの際に接続電極のAlが擦れて引きずられ
て隣接する接続電極103と短絡するという問題が発生
する。また、図8のように検査工程等でのプロービング
針の引きずりによる隣接接続電極同志の短絡106や、
基板製造工程、表示装置として仕上げるための組立て工
程において、例えばアレイ基板を収容し、搬送を容易に
するためのカセットキャリヤからの出入れする際に、基
板の端部がこすれてAl107が引きずられ、隣接する
接続電極102同志が短絡するという問題も生じてい
る。
As a method of separating the connection conductor from the connection electrode, FIG. 7 (a) (before chamfering), (b)
As shown in (after chamfering), there is a method of removing the connecting conductor 103, which short-circuits the connecting electrode 102 provided in the peripheral portion of the array substrate 101, by the chamfering 105 which is shaved obliquely by the grindstone 104 rotating with the substrate end. But,
When the display device becomes large, it is difficult to perform chamfering 105 uniformly, and since the connecting conductor is made of soft Al or the like, Al of the connecting electrode is rubbed and dragged during the chamfering and short-circuited with the adjacent connecting electrode 103. The problem occurs. Further, as shown in FIG. 8, a short circuit 106 between adjacent connection electrodes due to dragging of a probing needle in an inspection process or the like,
In a substrate manufacturing process and an assembly process for finishing as a display device, for example, when an array substrate is housed and is put in and out of a cassette carrier for facilitating transportation, an edge of the substrate is rubbed and Al 107 is dragged, There is also a problem that adjacent connection electrodes 102 are short-circuited.

【0007】一方、砥石を使用しないでレーザー光等の
エネルギー線で接続導体を切り離す方法があるが、図9
に示すように接続電極102と接続導体103の切断箇
所108に外部回路と接続するためのフレキシブル配線
基板(FPC、Flexible Printed Circuit)やフレキシ
ブル配線基板上に駆動素子が配置されたテープキャリヤ
パッケージ(TCP、Tape Career Package )109の
金属配線110が重なった場合、金属配線により切断箇
所が再び短絡されてしまうという問題も発生する。
On the other hand, there is a method of separating the connecting conductor with an energy ray such as a laser beam without using a grindstone.
As shown in FIG. 5, a flexible wiring board (FPC, Flexible Printed Circuit) for connecting to an external circuit at a cut portion 108 of the connection electrode 102 and the connection conductor 103, or a tape carrier package (TCP having a drive element arranged on the flexible wiring board). , Tape Career Package) 109 overlaps with each other, there is a problem that the cut portion is short-circuited again due to the metal wiring.

【0008】さらに、回転砥石により基板周辺部の端部
に形成した接続導体を削り取って除去する場合、削りか
すの基板への付着等が生じこれを除去する作業が必要に
なるなど作業工程数が増加する。これに対してレーザー
光などのエネルギー線を照射して接続導体を切り離し除
去する方法が有効であるが、図10のようにレーザー光
111が基板101内を乱反射して表示領域112内部
の配線の切断、スイッチング素子などの内部素子の破壊
を発生することがある。
Furthermore, when the connection conductor formed at the end of the peripheral portion of the substrate is scraped and removed by the rotating grindstone, shavings adhere to the substrate and the like, and the work for removing this is required. To increase. On the other hand, a method of irradiating an energy ray such as laser light to separate and remove the connection conductor is effective, but as shown in FIG. 10, the laser light 111 diffusely reflects inside the substrate 101 and the wiring inside the display area 112 This may cause disconnection or destruction of internal elements such as switching elements.

【0009】[0009]

【課題を解決するための手段】本発明は第1に、表示領
域に配置する光変調層を挟持する一対の基板と、前記表
示領域外の周辺領域において前記基板の周縁に沿って配
置された複数の接続電極と、これらの接続電極を前記基
板の最外縁部分で共通接続し、最終的にこれらの接続電
極から切離される接続導体とを有する表示装置におい
て、前記各接続電極の一部と前記接続導体とを絶縁層で
被覆してなる表示装置を得るものである。
In the first aspect of the present invention, a pair of substrates sandwiching a light modulation layer disposed in a display region and a peripheral region outside the display region are disposed along the periphery of the substrate. In a display device having a plurality of connection electrodes and a connection conductor commonly connected at the outermost edge portion of the substrate, and finally separated from the connection electrodes, a part of each of the connection electrodes A display device obtained by covering the connection conductor with an insulating layer.

【0010】さらに、絶縁基板と、この絶縁基板上に配
線される複数本の信号線および走査線と前記信号線およ
び前記走査線にスイッチング素子を介して接続される複
数の画素電極からなる表示領域とを含むアレイ基板と、
このアレイ基板の周辺部に配置され前記複数の信号線お
よび走査線に信号を供給するための外部回路に接続され
る複数の接続電極と、前記アレイ基板の周囲に配置され
前記接続電極相互を電気的に接続する接続導体と、前記
画素電極に対向する対向電極を含む対向基板と、前記ア
レイ基板と前記対向基板との間に挟持された光変調層と
を具備するアクティブマトリクス型表示装置において、
前記アレイ基板上で前記接続電極の一部が露呈するよう
に前記接続電極および前記接続導体を被覆する保護膜と
を具備してなるアクティブマトリクス型表示装置を得る
ものである。
Further, a display region including an insulating substrate, a plurality of signal lines and scanning lines wired on the insulating substrate, and a plurality of pixel electrodes connected to the signal lines and the scanning lines via switching elements. An array substrate including and
A plurality of connection electrodes arranged around the array substrate and connected to an external circuit for supplying a signal to the plurality of signal lines and scanning lines, and the connection electrodes arranged around the array substrate are electrically connected to each other. An active matrix type display device comprising: a connection conductor that electrically connects with each other; a counter substrate including a counter electrode facing the pixel electrode; and a light modulation layer sandwiched between the array substrate and the counter substrate,
An active matrix type display device comprising: a protective film covering the connection electrodes and the connection conductors so that a part of the connection electrodes is exposed on the array substrate.

【0011】さらに、上記において接続電極と接続導体
とがその切離し箇所で前記接続電極よりも細幅の導体で
結線されていることが望ましい。
Further, in the above description, it is desirable that the connection electrode and the connection conductor are connected by a conductor having a width narrower than that of the connection electrode at the separated portion.

【0012】さらに、上記においてアレイ基板周辺部上
の信号線および走査線と接続電極との間にIC駆動回路
などの回路が形成される装置についても適用されるもの
である。
Further, the above is also applied to a device in which a circuit such as an IC drive circuit is formed between the signal line and the scanning line on the peripheral portion of the array substrate and the connection electrode.

【0013】本発明は第2に、表示領域に配置する光変
調層を挟持する一対の基板と、前記表示領域外の周辺領
域において前記基板の周縁に沿って配置された複数の接
続電極とを有する表示装置の製造方法において、前記接
続電極を共通接続する接続導体を前記基板の最外縁部分
に形成し、前記各接続電極の一部と前記接続導体とを絶
縁層で被覆し、前記接続導体を前記接続電極から切離
し、または前記基板から除去することを特徴とする表示
装置の製造方法を得るものである。
Secondly, the present invention comprises a pair of substrates sandwiching a light modulation layer arranged in the display region, and a plurality of connection electrodes arranged along the peripheral edge of the substrate in a peripheral region outside the display region. In the method for manufacturing a display device having, a connection conductor commonly connecting the connection electrodes is formed at an outermost edge portion of the substrate, and a part of each connection electrode and the connection conductor are covered with an insulating layer, and the connection conductor is formed. Is separated from the connection electrode or is removed from the substrate to obtain a method for manufacturing a display device.

【0014】さらに、絶縁基板と、この絶縁基板上に配
線される複数本の信号線および走査線と前記信号線およ
び前記走査線にスイッチング素子を介して接続される複
数の画素電極からなる表示領域とを含むアレイ基板と、
このアレイ基板の周辺部に配置され前記複数の信号線お
よび走査線に信号を供給するための外部回路に接続され
る複数の接続電極と、前記画素電極に対向する対向電極
を含む対向基板と、前記アレイ基板と前記対向基板との
間に挟持された光変調層とを具備するアクティブマトリ
クス型表示装置の製造方法において、前記アレイ基板の
周辺部に前記接続電極を相互に電気的に接続する接続導
体を設け、前記接続電極の一部が露呈するように前記接
続電極領域および前記接続導体を被覆する保護膜を形成
し、前記接続導体を前記接続電極から切離しまたは前記
アレイ基板上から除去して前記接続電極間を絶縁保持す
ることを特徴とするアクティブマトリクス型表示装置の
製造方法を得るものである。
Further, a display region composed of an insulating substrate, a plurality of signal lines and scanning lines wired on the insulating substrate, and a plurality of pixel electrodes connected to the signal lines and the scanning lines via switching elements. An array substrate including and
A plurality of connection electrodes arranged on the periphery of the array substrate and connected to an external circuit for supplying signals to the plurality of signal lines and scanning lines; and a counter substrate including a counter electrode facing the pixel electrodes, In a method of manufacturing an active matrix display device comprising a light modulation layer sandwiched between the array substrate and the counter substrate, a connection for electrically connecting the connection electrodes to each other in a peripheral portion of the array substrate. A conductor is provided, a protective film is formed to cover the connection electrode region and the connection conductor so that a part of the connection electrode is exposed, and the connection conductor is separated from the connection electrode or removed from the array substrate. A method for manufacturing an active matrix type display device, characterized in that insulation is maintained between the connection electrodes.

【0015】さらに上記は、保護膜上から回転砥石によ
り接続電極を接続導体から切離しまたは前記接続導体を
除去する場合に効果がある。
Further, the above is effective when the connection electrode is separated from the connection conductor or the connection conductor is removed from the protective film by a rotary grindstone.

【0016】さらに上記は、アレイ基板側からレーザ光
を照射し、接続電極を接続導体から切離しまたは前記接
続導体を除去する場合に効果がある。
Further, the above is effective when the laser light is irradiated from the array substrate side to separate the connection electrode from the connection conductor or to remove the connection conductor.

【0017】上記保護膜の形成により、Al膜の引きず
りが防止され、接続電極間の短絡がなくなり、しかも切
離し箇所にFPC、TCP等の金属配線が重なっても保
護膜により短絡を生じることがない。
The formation of the protective film prevents the Al film from being dragged, eliminates the short circuit between the connection electrodes, and does not cause a short circuit due to the protective film even when the metal wiring such as FPC or TCP overlaps the separated portion. .

【0018】本発明は第3に、絶縁基板と、この絶縁基
板上に配線される複数本の信号線および走査線と前記信
号線および前記走査線にスイッチング素子を介して接続
される複数の画素電極からなる表示領域とを含むアレイ
基板と、このアレイ基板の周辺部に配置され前記複数の
信号線および走査線に信号を供給するための外部回路に
接続される複数の接続電極と、前記画素電極に対向する
対向電極を含む対向基板と、前記アレイ基板と前記対向
基板との間に挟持された光変調層とを具備し、前記アレ
イ基板の周辺部に前記接続電極を相互に電気的に接続す
る接続導体を設けて最終的に前記接続導体を前記接続電
極から切離しまたは前記アレイ基板上から除去するアク
ティブマトリクス型表示装置の製造方法において、前記
アレイ基板側でかつアレイ基板の法線に対して前記表示
領域側に傾斜した方向からエネルギー線を前記接続電極
と前記接続導体との切離し箇所に照射し、前記接続導体
を前記接続電極から切離しまたは前記アレイ基板上から
除去して前記接続電極間を絶縁保持することを特徴とす
るアクティブマトリクス型表示装置の製造方法にある。
Thirdly, the present invention relates to an insulating substrate, a plurality of signal lines and scanning lines arranged on the insulating substrate, and a plurality of pixels connected to the signal lines and the scanning lines via switching elements. An array substrate including a display region made of electrodes, a plurality of connection electrodes arranged in a peripheral portion of the array substrate and connected to an external circuit for supplying a signal to the plurality of signal lines and scanning lines, and the pixel An opposing substrate including an opposing electrode facing the electrode, and an optical modulation layer sandwiched between the array substrate and the opposing substrate are provided, and the connection electrodes are electrically connected to each other in a peripheral portion of the array substrate. In the method of manufacturing an active matrix type display device, which comprises providing a connection conductor for connection and finally separating the connection conductor from the connection electrode or removing it from the array substrate, Irradiating an energy ray from a direction inclined to the display area side with respect to the normal line of the array substrate to a disconnection point between the connection electrode and the connection conductor, disconnecting the connection conductor from the connection electrode or from the array substrate. A method for manufacturing an active matrix type display device is characterized in that the connection electrodes are removed and insulation is maintained between the connection electrodes.

【0019】接続導体の切断位置に、アレイ基板の裏面
から基板法線に対して傾斜した角度で、表示領域側の位
置からレーザー光などのエネルギー線を照射することに
よって、透明なアレイ基板内を乱反射する光を外側に放
出することができて、表示領域の配線、素子等を破壊す
ることがない。
By irradiating the cutting position of the connecting conductor with an energy ray such as a laser beam from the position on the display area side at an angle inclined from the back surface of the array substrate with respect to the substrate normal line, the inside of the transparent array substrate is irradiated. Light diffusely reflected can be emitted to the outside, and the wiring, elements, etc. in the display area are not destroyed.

【0020】[0020]

【発明の実施の形態】図1乃至図5に本発明の第1の実
施形態を示す。
1 to 5 show a first embodiment of the present invention.

【0021】アレイ基板11は12.1インチ対角の表
示領域12を備えた光透過型のアクティブマトリクス型
液晶表示装置用であって、アレイ基板11と対向基板1
3との間に配向膜14a、14bを介して液晶組成物か
らなる光変調層14が挟持されている。アレイ基板11
は、ガラス基板とこの基板上に複数の信号線15と複数
の走査線16とがマトリクス状に配置され、各交点近傍
にスイッチング素子として配置される例えばポリSiな
どの薄膜トランジスタTFT、(Thin Film Transisto
r)17を介してインジウムすず酸化物ITO(Indium
Tin Oxide)からなる透明な画素電極18が設けられて
いる。さらに、このガラス基板上には、走査線とほぼ平
行する補助容量線(Cs)(図示しない)が形成されるよ
う、補助容量線と画素電極の間には絶縁膜が介在する。
The array substrate 11 is for a light transmission type active matrix type liquid crystal display device having a display area 12 of 12.1 inches diagonal, and the array substrate 11 and the counter substrate 1 are arranged.
3, a light modulation layer 14 made of a liquid crystal composition is sandwiched between the light modulation layers 14 and 3 via alignment films 14a and 14b. Array substrate 11
Is a thin film transistor TFT, such as poly-Si, in which a glass substrate, a plurality of signal lines 15 and a plurality of scanning lines 16 are arranged in a matrix on the substrate, and which is arranged as a switching element in the vicinity of each intersection.
r) 17 through indium tin oxide ITO (Indium
A transparent pixel electrode 18 made of Tin Oxide) is provided. Further, an insulating film is interposed between the auxiliary capacitance line and the pixel electrode so that an auxiliary capacitance line (Cs) (not shown) which is substantially parallel to the scanning line is formed on the glass substrate.

【0022】対向基板13は、ガラス基板上にTFT1
7ならびに画素電極18周辺を遮光するためのマトリク
ス状の遮光膜BM(Black Matrix)19および赤R、緑
G、青Bの3色の光透過領域からなるカラーフィルター
20が配置され、この上に絶縁膜を介してITOからな
る対向電極21が配置されている。
The counter substrate 13 is a glass substrate on which the TFT 1 is provided.
7 and a matrix-shaped light-shielding film BM (Black Matrix) 19 for shielding the periphery of the pixel electrode 18 and a color filter 20 including light-transmissive regions of three colors of red R, green G, and blue B are arranged thereon. A counter electrode 21 made of ITO is arranged via an insulating film.

【0023】特に図1および図3に示すように、アレイ
基板11の各信号線15および走査線16は、それぞれ
対応してアレイ基板11の周辺部22に、ポリイミド等
のフレキシブル基板上に銅Cu等の金属配線が施された
FPC(TCP)23を介して外部駆動回路23aと電
気的に接続するための複数の接続電極24が厚み200
0〜5000AのAl材料で形成され、さらに、接続電
極24の基板外周縁の側に、静電気による画素TFTの
素子破壊等を防止するためのショートリングである接続
導体25各接続電極をその細線部26を介して相互に共
通接続するように接続電極24とともに同時にAl材料
で形成されている。この接続電極本体よりも細幅の導体
で形成された細線部26部分がこれらの電極間の切り離
し箇所26aとなる。
In particular, as shown in FIGS. 1 and 3, the signal lines 15 and the scanning lines 16 of the array substrate 11 respectively correspond to the peripheral portion 22 of the array substrate 11 and copper Cu on a flexible substrate such as polyimide. The plurality of connection electrodes 24 for electrically connecting to the external drive circuit 23a via the FPC (TCP) 23 provided with metal wiring such as
The connection conductor 25 is formed of an Al material of 0 to 5000 A, and further, on the outer peripheral edge side of the connection electrode 24, the connection conductor 25, which is a short ring for preventing element destruction of the pixel TFT due to static electricity, and the like, each connection electrode. It is formed of an Al material at the same time as the connection electrode 24 so as to be commonly connected to each other via 26. A thin line portion 26 formed of a conductor having a width narrower than that of the connection electrode main body serves as a separation portion 26a between these electrodes.

【0024】さらに、接続電極24と接続導体25の上
およびその周囲の基板上を絶縁層でできた保護膜27で
被覆する。保護膜27は熱CVD法あるいはプラズマC
VD法により、シリコン酸化膜またはシリコン窒化膜を
300〜1000A厚程度に単層もしくは多層に重ねて
形成する。この保護膜27は、表示領域のTFTなどの
素子を形成するときに同時に形成することができる。
Further, the connection electrode 24 and the connection conductor 25 and the surrounding substrate are covered with a protective film 27 made of an insulating layer. The protective film 27 is formed by thermal CVD or plasma C
By the VD method, a silicon oxide film or a silicon nitride film is formed to have a thickness of about 300 to 1000 A in a single layer or a multilayer. The protective film 27 can be formed at the same time when forming an element such as a TFT in the display area.

【0025】接続電極24の少なくとも一部28は、T
CP金属配線との接続のために露出しておく必要があ
る。このため、CDE(Chemical Dry Etching)法によ
りこれらの保護膜27の一部を除去し、接続電極24の
一部を露呈させる。
At least a part 28 of the connecting electrode 24 is T
It must be exposed for connection with the CP metal wiring. Therefore, a part of the protective film 27 is removed by the CDE (Chemical Dry Etching) method to expose a part of the connection electrode 24.

【0026】このアレイ基板11に対向電極21を有す
る対向基板13を取り付ける。両基板11、13の周辺
部に封着剤29を塗布して張合わせ表示領域12を形成
するとともに、封着部分からアレイ基板11の周辺部2
2を張出しておく。
A counter substrate 13 having a counter electrode 21 is attached to the array substrate 11. A sealing agent 29 is applied to the peripheral portions of both substrates 11 and 13 to form a bonded display area 12, and the peripheral portion 2 of the array substrate 11 is formed from the sealed portion.
Overhang 2.

【0027】次に図4(a)に示すように表示領域12
内への液晶注入、封止、偏光板貼付けの工程を経て、ア
レイ基板11の周辺部22の端部30を回転する砥石3
1により斜めに削り取り面取りし、接続導体を除去す
る。
Next, as shown in FIG. 4A, the display area 12
The grindstone 3 that rotates the end portion 30 of the peripheral portion 22 of the array substrate 11 through the steps of injecting liquid crystal into the inside, sealing, and pasting the polarizing plate.
1 and is chamfered diagonally to remove the connecting conductor.

【0028】または、図4(b)に示すように基板11
の裏面からYAGレーザー光32を照射して接続導体2
45接続電極24の間を切断する。
Alternatively, as shown in FIG. 4B, the substrate 11
Irradiate YAG laser light 32 from the back surface of the connection conductor 2
45 The connection electrodes 24 are cut off.

【0029】これにより、外部回路23aとの接続が可
能となる。砥石31により基板端部が擦れても絶縁膜2
7で保護されているので、直接柔らかい材料であるAl
に接触するようなことがなくなる。このため、Alが引
きずられて接続電極24同志が短絡するようなことはな
くなる。また、図5に示すように、接続電極24と砥石
研削かレーザー切断時に残された接続導体25の切断箇
所26aをFPCやTCPの金属配線33が橋絡するよ
うに重なっても接続電極24および接続導体25の上は
絶縁膜27で保護されているので短絡することがない。
なお、符号34は金属配線33と接続電極24を電気的
に接続する異方性導電接着剤を示す。
This enables connection with the external circuit 23a. Even if the edge of the substrate is rubbed by the grindstone 31, the insulating film 2
As it is protected by 7, it is a direct soft material, Al
It will not come into contact with. Therefore, Al is not dragged to short-circuit the connection electrodes 24. Further, as shown in FIG. 5, even if the connection electrode 24 and the cut portion 26a of the connection conductor 25 left at the time of grindstone grinding or laser cutting are overlapped so as to bridge the metal wiring 33 of the FPC or TCP, the connection electrode 24 and The top of the connecting conductor 25 is protected by the insulating film 27, so that no short circuit occurs.
Reference numeral 34 represents an anisotropic conductive adhesive that electrically connects the metal wiring 33 and the connection electrode 24.

【0030】また、本実施形態の変形として駆動回路を
信号線、走査線と接続電極との間に、例えば表示領域の
スイッチングTFTと同時に作製したポリSiTFTの
集積回路を配置した構造についても適用することができ
るものである。
Further, as a modification of this embodiment, a structure in which a driving circuit is arranged between a signal line, a scanning line, and a connection electrode, for example, an integrated circuit of a poly-SiTFT manufactured at the same time as a switching TFT in a display region is applied. Is something that can be done.

【0031】図6は、YAGレーザー光などのエネルギ
ー線の照射方法を説明するものである。
FIG. 6 illustrates a method of irradiating energy rays such as YAG laser light.

【0032】図2に示すようにアレイ基板11に対向基
板13を組合わせてセルを形成し、液晶注入、封止、偏
光板貼付け工程を経た液晶表示装置をX−Y−Z方向に
調整可能なテーブルに対向基板13側を下にし、表示装
置の裏面すなわちアレイ基板裏面11aを表面にして水
平に配置する。次にアレイ基板11裏面からエネルギー
線例えはYAGレーザー光32が当たるようにあらかじ
め光軸が調整されたHe/Neレーザー光を用いて照準
が合うようにテーブルを調整して所定の照準が合ったと
ころでYAGレーザー光32を照射し、接続電極24と
接続導体25とを切り離す。その際に、基板内でレーザ
ー光32が乱反射してその多くが表示領域側に伝達し内
部の配線パターンや素子等が破壊されないようにするた
め、図6に示すように基板の主表面の法線11bに対し
て表示領域側にレーザー光発進側を傾け表示領域外に向
かって光を角度θで傾斜して照射する。
As shown in FIG. 2, the array substrate 11 and the counter substrate 13 are combined to form a cell, and the liquid crystal display device which has undergone the liquid crystal injection, sealing, and polarizing plate pasting steps can be adjusted in the XYZ directions. The counter substrate 13 side is faced down on such a table, and the back surface of the display device, that is, the array substrate back surface 11a is placed as the front surface and arranged horizontally. Next, the table is adjusted so as to be aimed by using the He / Ne laser light whose optical axis is adjusted in advance so that the energy ray, for example, the YAG laser light 32 is radiated from the back surface of the array substrate 11, and the predetermined aim is achieved. By the way, the YAG laser light 32 is irradiated to separate the connection electrode 24 and the connection conductor 25. At this time, in order to prevent the laser light 32 from being diffusely reflected in the substrate and being largely transmitted to the display region side so that the internal wiring patterns, elements, etc. are not destroyed, as shown in FIG. The laser beam starting side is tilted toward the display area side with respect to the line 11b, and the light is emitted toward the outside of the display area at an angle θ.

【0033】連続して、液晶表示装置の周辺に設けられ
た接続導体25に沿ってレーザー光32が照射されるよ
うにレーザー光またはテーブルを移動させて接続導体2
5を接続電極24から切り離すことにより、接続電極2
4と接続導体25との電気的分離を容易に、かつ確実に
行うことができる。
Continuously, the laser light or the table is moved so that the laser light 32 is irradiated along the connection conductor 25 provided around the liquid crystal display device, and the connection conductor 2 is connected.
By disconnecting 5 from the connection electrode 24, the connection electrode 2
It is possible to easily and surely electrically separate 4 and the connection conductor 25.

【0034】なお、レーザー光32は必ずしもアレイ基
板裏面11aからではなく、図6とは反対方向の基板表
面から照射することも可能である。この場合も乱反射に
よる表示領域側への光伝達を最小限にすめために、アレ
イ基板面法線11bに対して傾斜した方向で表示領域外
に向かって傾斜させて照射する。
The laser light 32 may be emitted not from the back surface 11a of the array substrate but from the front surface of the substrate in the direction opposite to that shown in FIG. Also in this case, in order to minimize the light transmission to the display area side due to diffused reflection, the light is tilted toward the outside of the display area in a direction inclined with respect to the array substrate surface normal 11b.

【0035】接続導体25の切断後、ガラスのアレイ基
板11の欠け、クラック、割れなどを防止するために、
図6に示すように基板のエッジ部を軽く糸面取34を施
し、検査工程を経て、表示装置に電子部品、回路部品な
どを組み込み完成された液晶表示装置とする。
After the connection conductor 25 is cut, in order to prevent the glass array substrate 11 from being chipped, cracked, or broken,
As shown in FIG. 6, the edge portion of the substrate is lightly thread-chamfered 34, and after the inspection process, electronic components, circuit components, etc. are incorporated into the completed liquid crystal display device.

【0036】なお、このような傾斜したレーザー光照射
は、保護膜を形成しない表示装置にも適用することがで
きる。
Note that such inclined laser light irradiation can be applied to a display device in which a protective film is not formed.

【0037】[0037]

【発明の効果】本発明はショートリングの接続導体を機
械的に除去するために砥石により擦っても、保護膜によ
って接続電極や接続導体に砥石が直接的に接触しないた
め、これらの電極、導体をAlのような柔らかな材料で
形成しても擦りによってAlが引きずられず、電極相互
が短絡することがない。また、接続電極は表示装置の取
扱中に擦りが生じても保護される。さらに、接続導体の
一部が残った場合や、レーザー光によりこれら電極、導
体間を溶断して切り離した場合に、その切断箇所の上に
FPCあるいはTCPの金属配線が重なっても保護膜に
よる絶縁によって接続電極と接続導体が短絡することが
ない。
According to the present invention, even if a grinding stone is rubbed to mechanically remove the connecting conductor of the short ring, the protective film prevents the grinding stone from directly contacting the connecting electrode and the connecting conductor. Even if is formed of a soft material such as Al, Al is not dragged by rubbing and the electrodes do not short-circuit. Further, the connection electrode is protected even if rubbing occurs during handling of the display device. Furthermore, when a part of the connecting conductor remains, or when the electrodes and conductors are cut off by fusing with laser light, even if the metal wiring of FPC or TCP overlaps the cut portion, insulation by the protective film Therefore, the connection electrode and the connection conductor are not short-circuited.

【0038】さらに、レーザー光のようなエネルギー線
をアレイ基板法線に対して傾けて表示領域外に向けて切
断箇所を照射することで、アレイ基板に形成した素子や
配線を破壊することなく容易かつ確実に接続電極と接続
導体を切りはなくことができる。
Furthermore, by irradiating the cut portion toward the outside of the display area while inclining an energy ray such as a laser beam with respect to the normal line of the array substrate, it is easy to destroy the elements and wiring formed on the array substrate. In addition, the connection electrode and the connection conductor can be reliably cut off.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施形態を説明するもので表示領域
の一部を模式的に拡大して示す平面図、
FIG. 1 is a plan view schematically illustrating a part of a display area in an enlarged scale for explaining an embodiment of the present invention;

【図2】図1の表示領域の一部を拡大した示す断面図、FIG. 2 is a cross-sectional view showing an enlarged part of the display area of FIG.

【図3】図1のアレイ基板周辺部を拡大して示すもの
で、(a)は一部平面図、(b)は(a)をA−A線に
沿って切断した一部断面図、
3A and 3B are enlarged views showing the peripheral portion of the array substrate of FIG. 1, where FIG. 3A is a partial plan view, and FIG. 3B is a partial sectional view taken along line AA of FIG.

【図4】(a)、(b)は本発明の一実施形態の製造方
法を説明する断面図、
4A and 4B are cross-sectional views illustrating a manufacturing method according to an embodiment of the present invention,

【図5】本発明の一実施形態のアレイ基板周辺部にTC
Pを接続した構造を示す一部断面図、
FIG. 5 shows a TC on the periphery of an array substrate according to an embodiment of the present invention.
A partial cross-sectional view showing a structure in which P is connected,

【図6】本発明の他の実施形態の製造方法を説明する一
部断面図、
FIG. 6 is a partial cross-sectional view illustrating a manufacturing method according to another embodiment of the present invention,

【図7】従来の製造方法を説明するもので、(a)、
(b)はそれぞれ断面と平面を示す模式図、
FIG. 7 illustrates a conventional manufacturing method.
(B) is a schematic diagram showing a cross section and a plane,

【図8】従来の製造方法によるアレイ基板周辺部の一部
平面図、
FIG. 8 is a partial plan view of an array substrate peripheral portion by a conventional manufacturing method;

【図9】従来の製造方法によるアレイ基板周辺部にTC
Pを接続した構造を示す一部断面図、
FIG. 9 shows a TC on the periphery of the array substrate manufactured by the conventional manufacturing method.
A partial cross-sectional view showing a structure in which P is connected,

【図10】他の従来の製造方法を説明する一部断面図。FIG. 10 is a partial cross-sectional view illustrating another conventional manufacturing method.

【符号の説明】 11: アレイ基板 12: 表示領域 13: 対向基板 14: 光変調層 15: 信号線 16: 走査線 17: 薄膜トランジスタ(TFT) 18: 画素電極 21: 対向電極 23: TPC 24: 接続電極 25: 接続導体 26a:切り離し箇所 27: 絶縁層(保護膜) 31: 砥石 32: エネルギー線(レーザー光)[Explanation of Codes] 11: Array Substrate 12: Display Area 13: Counter Substrate 14: Light Modulation Layer 15: Signal Line 16: Scan Line 17: Thin Film Transistor (TFT) 18: Pixel Electrode 21: Counter Electrode 23: TPC 24: Connection Electrode 25: Connection conductor 26a: Separation point 27: Insulating layer (protective film) 31: Grinding stone 32: Energy ray (laser light)

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 表示領域に配置する光変調層を挟持する
一対の基板と、前記表示領域外の周辺領域において前記
基板の周縁に沿って配置された複数の接続電極と、これ
らの接続電極を前記基板の最外縁部分で共通接続し、最
終的にこれらの接続電極から切離される接続導体とを有
する表示装置において、前記各接続電極の一部と前記接
続導体とを絶縁層で被覆してなる表示装置。
1. A pair of substrates sandwiching a light modulation layer arranged in a display region, a plurality of connection electrodes arranged along the periphery of the substrate in a peripheral region outside the display region, and these connection electrodes. In a display device having a connection conductor commonly connected at the outermost edge portion of the substrate and finally separated from these connection electrodes, a part of each connection electrode and the connection conductor are covered with an insulating layer. Display device.
【請求項2】 絶縁基板と、この絶縁基板上に配線され
る複数本の信号線および走査線と前記信号線および前記
走査線にスイッチング素子を介して接続される複数の画
素電極からなる表示領域とを含むアレイ基板と、このア
レイ基板の周辺部に配置され前記複数の信号線および走
査線に信号を供給するための外部回路に接続される複数
の接続電極と、前記アレイ基板の周囲に配置され前記接
続電極相互を電気的に接続する接続導体と、 前記画素電極に対向する対向電極を含む対向基板と、 前記アレイ基板と前記対向基板との間に挟持された光変
調層とを具備するアクティブマトリクス型表示装置にお
いて、 前記アレイ基板上で前記接続電極の一部が露呈するよう
に前記接続電極および前記接続導体を被覆する保護膜と
を具備してなるアクティブマトリクス型表示装置。
2. A display region comprising an insulating substrate, a plurality of signal lines and scanning lines wired on the insulating substrate, and a plurality of pixel electrodes connected to the signal lines and the scanning lines via switching elements. An array substrate including a plurality of connection electrodes, a plurality of connection electrodes arranged in a peripheral portion of the array substrate and connected to an external circuit for supplying signals to the plurality of signal lines and scanning lines, and arranged around the array substrate. A connection conductor that electrically connects the connection electrodes to each other, a counter substrate including a counter electrode facing the pixel electrode, and a light modulation layer sandwiched between the array substrate and the counter substrate. In an active matrix display device, an activator comprising: a protective film covering the connection electrodes and the connection conductors so that a part of the connection electrodes is exposed on the array substrate. Bus matrix type display device.
【請求項3】 接続電極と接続導体とがその切離し箇所
で前記接続電極よりも細幅の導体で結線されている請求
項1または2に記載のアクティブマトリクス型表示装
置。
3. The active matrix type display device according to claim 1, wherein the connection electrode and the connection conductor are connected by a conductor having a width narrower than that of the connection electrode at a separation portion thereof.
【請求項4】 アレイ基板周辺部上の信号線および走査
線と接続電極との間に駆動回路が形成されてなる請求項
1または2に記載のアクティブマトリクス型表示装置。
4. The active matrix display device according to claim 1, wherein a drive circuit is formed between the signal line and the scanning line on the peripheral portion of the array substrate and the connection electrode.
【請求項5】 表示領域に配置する光変調層を挟持する
一対の基板と、前記表示領域外の周辺領域において前記
基板の周縁に沿って配置された複数の接続電極とを有す
る表示装置の製造方法において、前記接続電極を共通接
続する接続導体を前記基板の最外縁部分に形成し、前記
各接続電極の一部と前記接続導体とを絶縁層で被覆し、
前記接続導体を前記接続電極から切り離し、または前記
基板から除去することを特徴とする表示装置の製造方
法。
5. A display device having a pair of substrates sandwiching a light modulation layer arranged in a display region, and a plurality of connection electrodes arranged along a peripheral edge of the substrate in a peripheral region outside the display region. In the method, a connection conductor commonly connecting the connection electrodes is formed at the outermost edge portion of the substrate, and a part of each connection electrode and the connection conductor are covered with an insulating layer,
A method of manufacturing a display device, wherein the connection conductor is separated from the connection electrode or removed from the substrate.
【請求項6】 絶縁基板と、この絶縁基板上に配線され
る複数本の信号線および走査線と前記信号線および前記
走査線にスイッチング素子を介して接続される複数の画
素電極からなる表示領域とを含むアレイ基板と、このア
レイ基板の周辺部に配置され前記複数の信号線および走
査線に信号を供給するための外部回路に接続される複数
の接続電極と、 前記画素電極に対向する対向電極を含む対向基板と、 前記アレイ基板と前記対向基板との間に挟持された光変
調層とを具備するアクティブマトリクス型表示装置の製
造方法において、 前記アレイ基板の周辺部に前記接続電極を相互に電気的
に接続する接続導体を設け、前記接続電極の一部が露呈
するように前記接続電極および前記接続導体を被覆する
保護膜を形成し、前記接続導体を前記接続電極から切り
離しまたは前記アレイ基板上から除去して前記接続電極
間を絶縁保持することを特徴とするアクティブマトリク
ス型表示装置の製造方法。
6. A display region including an insulating substrate, a plurality of signal lines and scanning lines wired on the insulating substrate, and a plurality of pixel electrodes connected to the signal lines and the scanning lines via switching elements. An array substrate including a plurality of connection electrodes, a plurality of connection electrodes arranged in a peripheral portion of the array substrate and connected to an external circuit for supplying a signal to the plurality of signal lines and scanning lines, and a counter surface facing the pixel electrode. A method of manufacturing an active matrix display device, comprising: a counter substrate including electrodes; and a light modulation layer sandwiched between the array substrate and the counter substrate, wherein the connection electrodes are provided in a peripheral portion of the array substrate. A connection conductor electrically connected to the connection electrode, a protective film covering the connection electrode and the connection conductor is formed so that a part of the connection electrode is exposed, and the connection conductor is connected to the connection conductor. A method of manufacturing an active matrix type display device, characterized in that the connection electrodes are separated from each other or removed from the array substrate to maintain insulation between the connection electrodes.
【請求項7】 保護膜上から回転砥石により接続電極を
接続導体から切離しまたは前記接続導体を除去してなる
請求項6記載のアクティブマトリクス型表示装置の製造
方法。
7. The method of manufacturing an active matrix display device according to claim 6, wherein the connection electrode is separated from the connection conductor or the connection conductor is removed from the protective film by a rotary grindstone.
【請求項8】 アレイ基板側からレーザ光を照射し、接
続電極を接続導体から切離しまたは前記接続導体を除去
してなる請求項6記載のアクティブマトリクス型表示装
置の製造方法。
8. The method for manufacturing an active matrix type display device according to claim 6, wherein the array substrate side is irradiated with laser light to separate the connection electrode from the connection conductor or to remove the connection conductor.
【請求項9】 絶縁基板と、この絶縁基板上に配線され
る複数本の信号線および走査線と前記信号線および前記
走査線にスイッチング素子を介して接続される複数の画
素電極からなる表示領域とを含むアレイ基板と、このア
レイ基板の周辺部に配置され前記複数の信号線および走
査線に信号を供給するための外部回路に接続される複数
の接続電極と、 前記画素電極に対向する対向電極を含む対向基板と、 前記アレイ基板と前記対向基板との間に挟持された光変
調層とを具備し、前記アレイ基板の周辺部に前記接続電
極を相互に電気的に接続する接続導体を設けて最終的に
前記接続導体を前記接続電極から切離しまたは前記アレ
イ基板上から除去するアクティブマトリクス型表示装置
の製造方法において、 前記アレイ基板側でかつアレイ基板の法線に対して前記
表示領域側に傾斜した方向からエネルギー線を前記接続
電極と前記接続導体との切り離し箇所に照射し、前記接
続導体を前記接続電極から切り離しまたは前記アレイ基
板上から除去して前記接続電極間を絶縁保持することを
特徴とするアクティブマトリクス型表示装置の製造方
法。
9. A display region comprising an insulating substrate, a plurality of signal lines and scanning lines wired on the insulating substrate, and a plurality of pixel electrodes connected to the signal lines and the scanning lines via switching elements. An array substrate including a plurality of connection electrodes, a plurality of connection electrodes arranged in a peripheral portion of the array substrate and connected to an external circuit for supplying a signal to the plurality of signal lines and scanning lines, and a counter surface facing the pixel electrode. A counter substrate including an electrode; and a light modulation layer sandwiched between the array substrate and the counter substrate, and a connection conductor electrically connecting the connection electrodes to each other in a peripheral portion of the array substrate. In the method for manufacturing an active matrix display device, which is provided and finally the connection conductor is separated from the connection electrode or removed from the array substrate, By irradiating an energy ray from the direction inclined to the display area side with respect to the normal to the disconnection point between the connection electrode and the connection conductor, the connection conductor is disconnected from the connection electrode or removed from the array substrate. A method for manufacturing an active matrix type display device, characterized in that the connection electrodes are insulated from each other.
JP5884296A 1996-03-15 1996-03-15 Display device, active matrix type display device and manufacturing method therefor Pending JPH09251169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5884296A JPH09251169A (en) 1996-03-15 1996-03-15 Display device, active matrix type display device and manufacturing method therefor

Publications (1)

Publication Number Publication Date
JPH09251169A true JPH09251169A (en) 1997-09-22

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ID=13095918

Family Applications (1)

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100560968B1 (en) * 1998-12-04 2006-06-14 삼성전자주식회사 Liquid crystal display and manufacturing method having two or more shorting bars

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02117785A (en) * 1988-10-25 1990-05-02 Nec Corp Laser beam cutter
JPH02203380A (en) * 1988-12-21 1990-08-13 Toshiba Corp Production of liquid crystal display element
JPH02242229A (en) * 1989-03-16 1990-09-26 Matsushita Electron Corp Production of liquid crystal display device
JPH03134628A (en) * 1989-10-20 1991-06-07 Hosiden Corp Active matrix liquid crystal display element
JPH04172192A (en) * 1990-11-07 1992-06-19 Nec Corp Laser beam machine
JPH04221926A (en) * 1990-12-25 1992-08-12 Sharp Corp Production of liquid crystal display device
JPH0567598A (en) * 1991-07-11 1993-03-19 Fujitsu Ltd Manufacture of semiconductor substrate
JPH05142569A (en) * 1991-11-20 1993-06-11 Sharp Corp Active matrix substrate
JPH07230098A (en) * 1994-02-18 1995-08-29 Sanyo Electric Co Ltd Liquid crystal display device
JPH086069A (en) * 1994-06-20 1996-01-12 Mitsubishi Electric Corp Active matrix substrate, liquid crystal display device formed by using the same and its production

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02117785A (en) * 1988-10-25 1990-05-02 Nec Corp Laser beam cutter
JPH02203380A (en) * 1988-12-21 1990-08-13 Toshiba Corp Production of liquid crystal display element
JPH02242229A (en) * 1989-03-16 1990-09-26 Matsushita Electron Corp Production of liquid crystal display device
JPH03134628A (en) * 1989-10-20 1991-06-07 Hosiden Corp Active matrix liquid crystal display element
JPH04172192A (en) * 1990-11-07 1992-06-19 Nec Corp Laser beam machine
JPH04221926A (en) * 1990-12-25 1992-08-12 Sharp Corp Production of liquid crystal display device
JPH0567598A (en) * 1991-07-11 1993-03-19 Fujitsu Ltd Manufacture of semiconductor substrate
JPH05142569A (en) * 1991-11-20 1993-06-11 Sharp Corp Active matrix substrate
JPH07230098A (en) * 1994-02-18 1995-08-29 Sanyo Electric Co Ltd Liquid crystal display device
JPH086069A (en) * 1994-06-20 1996-01-12 Mitsubishi Electric Corp Active matrix substrate, liquid crystal display device formed by using the same and its production

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100560968B1 (en) * 1998-12-04 2006-06-14 삼성전자주식회사 Liquid crystal display and manufacturing method having two or more shorting bars

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