JPH09209143A - Film forming device and method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To forms films of arbitrary shapes on the arbitrary surfaces or places of microparts with a film forming device by integrating an energy particle source and a target forming sputtered particles. SOLUTION: This device is formed by providing the front end of a large- diameter pipe 1 with a plasma holding chamber 2 which is a capillary, installing an electrode 3 to its base end 3 and opening a target holding part 4 at the front end. The target T is held to incline at a prescribed angle with the axial line of the capillary 2 and is formed with a very small release port 5 on the side facing the holding part 4 to release the sputtered particles. The positive ions among the charge particles in the plasma P are accelerated by an electric field when the high-frequency electric field is impressed on the electrode 3 by a power source 6 and a relatively negative high voltage is impressed on the target T by a power source 7. These positive ions come into bombardment against the target T and the sputtered particles of the atoms and molecules constituting the target material are released. As a result, a sample A is subjected to the film formation of the patterns of the size nearly the same as the size of the release port 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming method and an apparatus for forming a film having a specific pattern on a minute area on the surface of various samples.

[0002]

2. Description of the Related Art Conventionally, in order to form a film on a minute part such as an electronic part, a precision machine part and a medical part, it is generally performed by vacuum vapor deposition or sputter film formation. As shown in FIG. 13, the sputter heating is performed by irradiating a target T made of a film forming material with a high energy beam such as an ion beam from a beam source 52 in a vacuum container 51, and the target T is secondarily emitted. The sputtered particles are caused to collide with the surface of the workpiece A to be attached and deposited.

[0003]

However, in all of the conventional film forming methods by vacuum vapor deposition or sputter film formation, only a specific surface of the workpiece is formed uniformly. On any surface or position of the work piece,
It is not possible to form a film in an arbitrary pattern. Therefore, it has been extremely difficult to combine a plurality of minute parts to manufacture a high-performance part or to form a film on a part having a complicated shape.

Therefore, an object of the present invention is to perform film formation in an arbitrary pattern shape on an arbitrary surface or place of a minute component, and to perform film formation on a boundary portion of a plurality of minute substances for adhesion / bonding. An object of the present invention is to provide a device and a method capable of doing so.

[0005]

The invention according to claim 1 is characterized in that an energetic particle source for producing energetic particles and a target for producing sputter particles by irradiation of the energetic particles are integrated. It is a film forming apparatus. As a result, there is no positional deviation between the particle source and the target even when the device is moved as a whole, and the adjustment of these components is not necessary, which is suitable for film formation work on a minute sample in a narrow space. By attaching such a small film forming device to a manipulator or a translation / rotational moving stage, the film forming process or the adhesion / joining by film forming can be performed while controlling the relative position to the sample / target or moving. be able to.

According to a second aspect of the present invention, the plasma holding chamber for holding the plasma therein is provided with a target mounting portion for mounting a target that receives the plasma and discharges sputtered particles, and the target mounting portion is provided. The film forming apparatus according to claim 1, wherein a sputtered particle emission hole for emitting sputtered particles generated from the target is provided at a position facing the target attachment portion.

In this apparatus, a microtube having a target and an electrode is used to form plasma in a micro area, and sputtered particles of the target reach the micro area of the sample to form a film. By forming plasma in a minute region using a thin tube or the like, the sputtered particle generation source can be brought close to the vicinity of the film formation target portion of the sample. Further, although the target is installed at the tip of the thin tube, minute holes are made in the vicinity of the target, and sputtered particles are emitted from the holes so that a film can be formed in a minute area of the sample.

The invention according to claim 3 is the film forming apparatus according to claim 2, wherein the holding chamber is provided with a plasma generating chamber for generating plasma. If plasma is unlikely to be generated in the thin tube, use two or more electrodes in addition to the target,
Applying a high frequency electric field or DC voltage to form plasma,
Due to the influence, the formation of plasma and the presence of charged particles also exist in the thin tube portion in the downstream portion, and it is possible to easily generate the sputtered particles by impacting the target. At this time, plasma can be generated by a method other than the above, for example, introduction of microwaves.

According to a fourth aspect of the present invention, the target is attached to the tip of the beam outlet of the energy beam source so that the surface intersects the beam line of the energy beam, and sputtered particles generated from the target by beam irradiation. The film forming apparatus according to claim 1, wherein the film is guided to a minute region of the sample.

In this apparatus, a target is irradiated with an energy beam source to form a film by sputtering particles. As an energy beam source, for example, Japanese Patent Application No. 7-
For example, the energy beam source described in No. 53231 is used. If the target holding part is formed in a thin tubular shape downstream of the energy beam emission port, the target can be brought close to the sample deposition part, and sputtered particles from the target can be made to a minute area at a specific position of the sample. It is possible to form a film, or to form a film on the boundary between minute objects for adhesion and bonding.

Further, by forming a hole on the upstream side in the target connecting thin tube or the like, gas particles having low energy can be diffused into the vacuum container. As a result, the probability of collision with the low-energy gas particles while the beam is being applied to the target is reduced, the target can be bombarded efficiently, and sputtered particles can be released efficiently.

According to a fifth aspect of the present invention, a material adhering portion for adhering a film forming / adhesive material is formed at a beam exit portion of the energy beam source, and energetic particles generated inside the energy beam source are applied to the adhering material. 2. The film forming apparatus according to claim 1, wherein the film is formed by irradiating and is sputtered or heated and evaporated, and is discharged from the outlet to be guided to a minute region of the sample.

When an adhesive material or a film forming material is applied or attached to the inner surface of the beam emitting electrode of the energy beam source and plasma is generated, the adhesive material or the film forming material is heated or Vapor is generated by sputtering or the like, and the vapor is emitted from the beam emission hole, so that a film can be formed on a minute region at an arbitrary position of the sample.

In order to make plasma generation more efficient,
Further, in order to generate higher-density plasma, a high-frequency electric field can be applied, or another electrode for applying a high-frequency electric field can be used in addition to the focusing cathode / anode. Further, instead of high frequency, microwaves can be introduced to facilitate plasma generation.

According to a sixth aspect of the present invention, there is provided the film forming apparatus according to the fifth aspect, wherein the beam outlet has a nozzle shape having a narrow portion. The invention according to claim 7 is the film forming apparatus according to any one of claims 4 to 6, wherein the energy beam source generates a convergent beam. The invention according to claim 8 is the film forming apparatus according to claim 7, wherein at least one of the anode and the cathode of the energy beam source has a curved surface shape or a conical shape.

According to a ninth aspect of the present invention, in the film forming apparatus according to any one of the fourth to eighth aspects, the energy beam source applies a high frequency electric field to either the anode or the cathode. is there. According to a tenth aspect of the invention, in the energy beam source, between the anode and the cathode,
9. The film forming apparatus according to claim 4, further comprising an intermediate electrode for applying a high frequency electric field.

The invention according to claim 11 is characterized in that a relatively negative voltage is applied to the target.
The film forming apparatus as described in any one of 1 to 10. A relatively negative voltage compared to the potential of the energy beam emitting electrode can be applied to the target to further accelerate the ion component in the beam and increase the sputter flow sample from the target. The invention according to claim 12 is the film forming apparatus according to any one of claims 1 to 11, characterized in that the emission holes for emitting the sputtered particles are formed to have a predetermined pattern. .

According to a thirteenth aspect of the present invention, in the film forming method of forming a film by directing an energy beam to the target and applying the sputtered particles emitted from the target to the film forming substrate, the target is formed. A film forming method characterized in that the surface of the target is arranged in the vicinity of the base material so as to face the film forming portion of the base material, and the sputtered particles are locally exposed to the base material to form the film. . Thereby, it is possible to form a film only on a necessary portion on a minute base material without dispersing sputtered particles to an unnecessary portion.

According to a fourteenth aspect of the present invention, there is provided a film forming method according to the thirteenth aspect, wherein the film forming apparatus according to any one of the fourth to twelfth aspects is used as the film forming apparatus. Since the beam source and the target are integrated, it is not necessary to adjust the beam and the target, and it is possible to quickly move to the necessary place.

The fifteenth aspect of the present invention is the film forming method according to the fourteenth aspect, wherein the energy beam source and the target are used separately. In this case, by separately holding the target and the beam source and adjusting the positions, the film formation can be performed only on the necessary portions. The invention according to claim 16 is the film forming method according to claim 15, characterized in that the energy beam source generates a convergent energy beam. With a small energy beam source, the plasma generation mechanism cannot be made large. Therefore, if the generated beam is converged and the efficiency of the beam amount irradiated to the target is increased, the amount of sputtered particles also increases, resulting in efficient beam sputtering. A film is formed.

The invention according to claim 17 is characterized in that the film formation is carried out while moving the energy beam source with respect to the target and / or the sample to be film-formed. Is. The invention according to claim 18 is the film forming method according to claim 17, wherein the movement is performed by a translation / rotation movement stage. The invention according to claim 19 is the film forming method according to claim 17, wherein the movement is performed by a manipulator.

The invention according to claim 20 is the film forming method according to any one of claims 13 to 19, characterized in that a plurality of energy beam sources are provided. According to a twenty-first aspect of the present invention, the relative positions of the target, the energy beam source, and the plurality of minute samples are moved, and a film is formed at the boundary between the samples to bond and bond the samples.
The film forming method as described in any one of 3 to 20.

The invention according to claim 22 is the film forming method according to any one of claims 13 to 21, characterized in that a shield is provided between the target and the sample. As a result, the sputtered particles generated from the target transfer the pattern shape, and the patterned film can be formed on the sample surface. In addition, since the film is formed in a smaller area, the diameter of the energy beam emitted can be limited to make the flow area for irradiating the target minute.

The invention according to claim 23 is characterized in that the target can use any material such as a metal material, a resin material, a ceramic, a semiconductor material, etc. as the target. It is a film forming method. In particular, when a fast atom source is used as the energy beam source, no matter if the target is any material of metal, semiconductor, insulator, or composite thereof, even if there is charge up, an electrically neutral beam Therefore, the target can be irradiated and therefore the film can be formed.

[0025]

EXAMPLE FIG. 1 shows a film forming apparatus according to a first example of the present invention. As shown in this figure, this device is for generating plasma P in a minute area, and is provided at the tip of the large-diameter tube 1.
A thin tube (plasma holding chamber) 2 for holding plasma is provided inside. The electrode 3 is installed at the base end thereof, and the target holding portion 4 for holding the target T is opened and formed at the tip end. The target T is held by being inclined at a predetermined angle with respect to the axis of the thin tube 2, and a minute emission hole 5 for emitting sputtered particles is formed on the side facing the holding portion 4. As described above, when the target T is installed with the tip end of the thin tube 2 inclined, the scattering direction of the sputtered particles and the position of the minute hole are easily matched, which is more efficient. The discharge hole 5 is not limited to a circular hole, but may be an elongated hole or a slit.
The diameter of the circular hole and the width of the slit are from 1 μm to 100 μm
And

In the film forming apparatus having this structure, in order to form a film, an inductively coupled high frequency electric field or a capacitively coupled high frequency electric field is applied to the electrode 3 by the power source 6 and the power source 7 is applied to the target T.
Therefore, a relatively negative high voltage of about 500 V to about 5 kV is applied. Then, among the charged particles in the plasma P, positive ions are accelerated by the electric field and bombard the target T, and sputtered particles of atoms and molecules that form the target material are emitted from the target T. As a result, sample A
A film having a pattern approximately similar to a slit or a circular hole is formed on.

At this time, the positional relationship between the sample A and the target T does not have to be fixed, and the beam source or the sample A is installed on a manipulator or a rotation / translation stage.
The film can be formed on any surface or place of the sample A.

FIG. 2 shows a preferred embodiment when it is difficult to generate plasma P in the thin tube 2. That is, another electrode 8 is provided in the large diameter tube 1 on the upstream side, and the plasma P is generated in a volume region larger than that of the thin tube 2. As a result, a large amount of charged particles are generated, so that the plasma P is easily generated in the thin tube 2. In the illustrated example, a high frequency voltage is applied to the upstream electrode 8 by the power source 9, the downstream electrode 3 is grounded, and a high negative voltage is applied to the target T.

FIG. 3 shows a film forming apparatus according to another embodiment of the present invention. A target T is integrally installed at the tip of the cylindrical beam source 10 on the beam emission electrode side of the beam source 10. In the example of FIG. 3, a thin tube 12 is attached to the beam emitting electrode 11 as shown in FIG.
A minute target T is installed at the tip of 2. The beam source 10 may be a well-known one and may be the same as the beam source described in Japanese Patent Application No. 7-53231 invented by the inventors.

At this time, the thin tube 12 may be an insulator or a conductor. When it is a conductive material, the thin tube 12 and the target T have the same potential as the beam emission electrode 11. At this time, the beam that has been accelerated by the beam emission electrode 11 and has increased energy bombards the target T, and the target constituent particles are sputtered.

On the other hand, when the thin tube 12 is an insulator, the target T does not have to have the same potential as the beam emission electrode 11, so that a relatively negative potential is applied to the target T, for example. You can At this time, of the beams, the positive ion beam can strike the target T in a state where the energy is even higher, whereby a large amount of sputtered particles can be efficiently emitted.

At the tip of the thin tube 12, as shown in (b), a discharge hole 13 having a slit or a circular hole near the target T is formed.
Is opened, and the sputtered particles reach the local region of the sample A to form a film. In this way, since the tip end portion for emitting the sputtered particles is minute, the sputtered particle source can be brought close to the minute sample A, and more precise film formation and film formation adhesion can be performed.

The material of the target T is aluminum,
Conductive materials such as copper, chromium, tungsten and nickel, insulating materials such as resins, adhesives, ceramics, Teflon, etc., or semiconductor materials such as Si, GaAs, SiO ₂ and Mo.
A lubricating material such as S ₂ or a composite material thereof can be used.

FIG. 4 is similar to the case of FIG. 3 except that the target T itself is used as a beam emitting electrode. For example, a conductive material such as copper or aluminum is formed to have a thin tip and is installed in the downstream portion of the beam source 10. When discharge is performed in this apparatus, the beam impacts the target electrode 14, and the sputtered particles are emitted from the emission hole 15 at the tip portion to form a film or adhere to a minute area of the sample A.

The hole diameter and slit width are 1 μm to 100 μm
It is a degree. Therefore, the width and diameter of the film formed on sample A is 1μ.
A film having a pattern of m to 100 μm is achieved. As is common to FIG. 3 and FIG. 4, when the thin tube 12 and the target electrode 14 are provided with holes for degassing, the pressure at the tip can be lowered, and the degree of deactivation of the beam can be reduced. can do.

FIG. 5 shows still another embodiment of the present invention. In this example, the downstream electrode 20 of the beam source 10 is provided with an emission hole 22 in the shape of a jet nozzle having a narrow portion 21 between the inlet and the outlet. And (b)
As shown in, a material 23 for film formation or adhesion is attached to a portion 21a on the front side of the narrow portion 21 of the emission hole 22 where the beam impacts. In such a configuration, particles sputtered by the beam and gas particles turned into vapor by impact heating are mixed with an introduction gas such as argon and discharged downstream. Then, film formation and adhesion can be performed on the minute area of the sample A.

In this case, since the sample A is irradiated with a jet flow in a gas state, the low energy particles are formed as compared with the film formed by the sputtered particles. Although not shown in the figure, a mask having a pattern hole may be provided between the downstream electrode and the sample A in order to further reduce the film formation area. For example, a nozzle with a hole diameter of 0.5 mm and a hole diameter of 10
If a mask of μm is used, a film having a diameter of about 10 μm can be formed.

In each of the above embodiments, the beam generating source and the target T are integrated, but the following is an embodiment in which the beam generating source and the target T are separate. That is, the target T is arranged in the vicinity of the sample A to be film-formed so that the surface thereof faces the film-formation site of the sample A, and the beam generation source 30 is arranged at a position distant from the target T to irradiate the energy beam. Then, the sputtered particles generated are locally applied to the sample A to form a film.
By doing so, the beam generation source 30 is not contaminated by the spatter, and stable operation is performed for a long period of time.

6 to 9 show that the beam generation source 30 generates a convergent beam so that the beam is focused on the target T. In these examples, the shapes of the electrode 31 and the beam emission electrode 32 on the upstream side are devised.
For example, in FIG. 6, the shape of the electrode surface is processed into a spherical shape centered on the convergence point, and the beam emission hole 33 is provided on the surface. In such a configuration, the density of the beam with which the target T is irradiated can be increased as compared with the case where the charged particles are accelerated in parallel and extracted as a beam. Therefore, since the sputtered particle density can be increased, local film formation and adhesion can be efficiently performed.

Further, as another function and effect of being a convergent beam, by adjusting the distance between the beam emitting electrode 32 and the target T, it is possible to control the area or density at which the beam is irradiated on the target T. it can. Therefore, it is effective when it is desired to control materials having different sputter rates or film forming regions. Actually, for example, an electrode made of stainless steel or graphite is installed in a quartz or Pyrex discharge tube. At this time, a discharge tube having an inner diameter of 0.1 mm to 10 mm can be used.

In FIG. 6, when it is difficult to form the spherical surface of the beam emitting electrode 32, as shown in FIG.
The beam emission electrode 32a can be sharpened. This also makes it easier for the electric field to concentrate, the ion acceleration direction is concentrated in the sharpened portion, and the beam is converged.

FIG. 8 shows a case where a high frequency electric field is applied to the upstream electrode by the power source 34. This is to facilitate the occurrence of discharge by applying a high frequency voltage to the upstream electrode when the above-mentioned convergent small beam source 30 is unlikely to discharge. At that time, the beam emission electrode
When a high voltage relatively negative to the plasma P potential is applied, the positive ions in the plasma P are accelerated toward the beam emission electrode and a convergent beam can be generated.

Similarly, in FIG. 9, when discharge is unlikely to occur, an intermediate electrode 35 is newly provided and a power source 36 applies an inductively coupled high frequency voltage or a capacitively coupled high frequency voltage to facilitate discharge. . It should be noted that it is possible to facilitate the occurrence of discharge by introducing microwaves instead of these high frequency voltages.

FIG. 10 shows an example in which the small beam source 30 as described with reference to FIGS. 6 to 9 is used to facilitate relative movement with respect to the target T and the sample A. A film is formed by irradiating a beam while rotating and translating each source by an appropriate means. Therefore, the minute target T can be installed in the vicinity of the sample A to easily form a film with an arbitrary pattern on an arbitrary place or surface of the sample A. Further, as shown in the drawing, a film can be formed on a joint portion or a boundary portion of a plurality of micro components for fixation or adhesion. For example, a micro columnar component A ₁ such as tungsten, stainless steel, or titanium having a diameter of about 10 nm to 1 mm can be brought into close contact with the polyimide or silicon substrate A ₂ , and film-forming adhesion can be performed at the boundary portion.

At this time, a hole for assembling may be preliminarily formed in the substrate A ₂ , and the film may be bonded after the assembling. Further, in order to perform such work efficiently, the relative positional relationship between the target T, the beam source 30, and the sample A may be position-controlled by a manipulator or a rotation / translation stage. Further, the work can be performed more efficiently by using a system capable of observing the relative positional relationship and the film formation state with an optical microscope, an operation electron microscope, a laser microscope, or the like.

FIG. 11 shows that when a small target T is installed downstream of the small beam source 40 and sputtering film formation is performed,
By providing a mask 41 having a pattern hole between the sample A and the target T, a film having a fine pattern shape is achieved. For example, the beam diameter is 10 nm
1 mm, using a fine target T of chromium, Si
When performing pattern film formation on the multiple surfaces of the minute sample A of O ₂ or when performing film formation adhesion of a plurality of minute parts, a mask with a pattern hole is set between the target T and the sample A to form a pattern. Do the membrane. Further, for example, a gold pattern film may be formed on the surfaces of a plurality of micro-semiconductor deice parts, and these parts may be brought into close contact with each other and heated to perform diffusion bonding or circuit bonding between devices.

FIG. 12 shows an embodiment in which the wiring of a micropattern is formed locally on the three-dimensional microstructure. For this, the method using the small beam source 10 shown in FIGS. 3, 4 and 5 is used. The emission holes 13 and 15 for emitting sputtered particles from the target T form a wiring pattern, and the sputtered particles that have passed through the pattern holes are deposited on the sample A ₃ having a fine parallel plate structure. This element has a micro force strain sensor function. In this case, the sample A ₃ is a microstructure manufactured by wire cutting and has a width of 100 μm and a length of 400 μm.
m, thickness 10 μm.

In the sample A _{3 having} such a parallel plate structure, when a minute force causes a minute strain, the formed conductive wiring of copper or aluminum acts as a strain resistance wire, and the minute strain causes the strain. Shows resistance change. By taking the output and calibrating the relationship between the minute force applied to the parallel plate structure and the strain resistance change in advance, it can be used as a minute force sensor.

[0049]

As described above, according to the present invention, a small energy beam source and a micro sample are integrated or only a target is installed in the vicinity of the sample, and sputtered particles are reduced in the vicinity of the sample. Since it can be supplied to an area to realize film formation in a minute area, it is possible to perform film formation in a minute pattern on an arbitrary surface or place of a sample as described above, or at a joint or a contact boundary of a plurality of minute parts. Thus, film formation and adhesion can be efficiently performed.

Therefore, in the conventional sputtering film forming apparatus, it is difficult to perform the pattern-like film forming on the three-dimensional / multi-face of an arbitrary surface or place of a minute sample, and the processing such as adhesion, fixing or joining of the minute sample. It can be realized and is very significant in semiconductor repair, wiring repair / bonding of circuit elements, micromachining technology, and industrial fields.

[Brief description of drawings]

FIG. 1 is a sectional view partially showing a film forming apparatus according to a first embodiment of the present invention.

FIG. 2 is a sectional view partially showing a film forming apparatus according to a second embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a film forming apparatus of a third embodiment of the present invention.

FIG. 4 is a sectional view showing a film forming apparatus of a fourth embodiment of the present invention.

FIG. 5 is a sectional view showing a film forming apparatus of a fifth embodiment of the present invention.

FIG. 6 is a sectional view showing a film forming apparatus of a sixth embodiment of the present invention.

FIG. 7 is a sectional view showing a film forming apparatus of a seventh embodiment of the present invention.

FIG. 8 is a sectional view showing a film forming apparatus of an eighth embodiment of the present invention.

FIG. 9 is a sectional view showing a film forming apparatus of a ninth embodiment of the present invention.

FIG. 10 is a perspective view showing an embodiment of the film forming method of the present invention.

FIG. 11 is a cross-sectional view showing another embodiment of the film forming method of the present invention.

FIG. 12 is a perspective view showing still another embodiment of the film forming method of the present invention.

FIG. 13 is a diagram showing a conventional sputtering film forming method.

[Explanation of symbols]

 1 large diameter tube 2,12 thin tube (plasma holding chamber) 3,8,20,31 electrode 4 holding part 5,13,15,22 emission hole 6,7,9,34,36 power supply 10,30,40 beam source 11, 32, 32a Beam emission electrode 14 Target electrode 21 Narrow part 21a Material adhering part 23 Adhesive material 33 Beam emission hole 35 Intermediate electrode 41 Mask A Sample T Target P Plasma

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Internal reference number FI Technical display location H05H 1/26 H05H 1/26 (72) Inventor Katsunori Ichiki 4-chome, Fujisawa, Kanagawa Prefecture No. 1 Incorporated EBARA Research Institute (72) Inventor Yotaro Hatamura 2-12-11 Kohinata, Bunkyo-ku, Tokyo (72) Inventor Masayuki Nakao 4-272 Shin-Matsudo, Matsudo-shi, Chiba D-805

Claims (23)

[Claims] 1. A film forming apparatus, wherein an energetic particle source for producing energetic particles and a target for producing sputter particles by irradiation of the energetic particles are integrated. 2. A plasma holding chamber for holding plasma therein is provided with a target mounting portion for mounting a target that receives the plasma and emits sputtered particles, and faces the target mounting portion of the holding chamber. The film forming apparatus according to claim 1, wherein a sputtered particle emission hole for emitting sputtered particles generated from the target is provided at the position. 3. The plasma generating chamber for generating plasma is attached to the holding chamber.
3. The film forming apparatus according to item 1. 4. A target is attached to the tip of the beam outlet of the energy beam source so that the surface intersects the beam line of the energy beam, and the sputtered particles generated from the target by the beam irradiation are guided to a minute region of the sample. The film forming apparatus according to claim 1, further comprising a lead-out section. 5. A material adhering portion for adhering a film forming / adhesive material is formed at a beam exit portion of the energy beam source, and the adhering material is irradiated with energetic particles generated inside the energy beam source to sputter or heat. The film forming apparatus according to claim 1, wherein the film forming apparatus is vaporized and discharged from the outlet to be guided to a minute area of the sample. 6. The film forming apparatus according to claim 5, wherein the beam outlet has a nozzle shape having a narrow portion. 7. The film forming apparatus according to claim 4, wherein the energy beam source generates a convergent beam. 8. The film forming apparatus according to claim 7, wherein at least one of the anode and the cathode of the energy beam source has a curved surface shape or a conical shape. 9. The film forming apparatus according to claim 4, wherein the energy beam source applies a high frequency electric field to either the anode or the cathode. 10. The film forming apparatus according to claim 4, wherein the energy beam source has an intermediate electrode for applying a high frequency electric field between an anode and a cathode. 11. The film forming apparatus according to claim 1, wherein a relatively negative voltage is applied to the target. 12. The film forming apparatus according to claim 1, wherein the emission holes for emitting the sputtered particles are formed to have a predetermined pattern. 13. A film forming method for forming a film by directing an energy beam to a target and applying sputtered particles emitted from the target to the film forming substrate, wherein the target is provided near the film forming substrate. The film forming method is characterized in that the surface of the substrate is arranged so as to face the film formation site of the base material, and the sputtered particles are locally exposed to the base material to form the film. 14. The film forming method according to claim 13, wherein the film forming apparatus according to any one of claims 4 to 12 is used as the film forming apparatus. 15. The film forming method according to claim 14, wherein the energy beam source and the target are used as separate bodies. 16. The film forming method according to claim 15, wherein the energy beam source generates a convergent energy beam. 17. The film forming method according to claim 13, wherein the film formation is performed while moving the energy beam source with respect to the target and / or the sample to be formed. 18. The film forming method according to claim 17, wherein the movement is performed by a translation / rotation movement stage. 19. The film forming method according to claim 17, wherein the moving is performed by a manipulator. 20. The film forming method according to claim 13, wherein there are a plurality of energy beam sources. 21. The target, the energy beam source, and a plurality of micro-samples are moved relative to each other, and a film is formed at the boundary between the samples to bond and bond them. The film-forming method as described in 1. 22. The film forming method according to claim 13, wherein a shield is provided between the target and the sample. 23. The film forming method according to claim 13, wherein the target can be any material such as a metal material, a resin material, a ceramic material, or a semiconductor material.