JP3624990B2 - Joining method of minute objects - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for joining minute objects using an energy beam, and more particularly to a technique for joining minute objects for joining or adhering minute samples of the order of nm (nanometers) or μm (micrometers).
[0002]
[Prior art]
Conventionally, a photolithography technique mainly used for semiconductors is known as a fine processing technique of the order of nm or μm. In this method, a photoresist film is applied to a semiconductor wafer having a planar structure, and this is exposed to light, an electron beam, an X-ray, or the like through a mask to provide a selective opening in the photoresist film. Then, processing such as impurity doping, etching or film formation of the semiconductor wafer itself is performed from the opening.
[0003]
Thus, in the photolithography technique, sub-micron level processing is possible using techniques such as reduction exposure. However, the photolithography technique irradiates a flat processing surface with light or the like from the vertical direction, and the processing object is limited to a flat processing object due to the depth of focus due to reduction exposure or the like. Moreover, the processed surface is limited to a relatively flat object.
[0004]
However, recently, a micro-machinery technology for forming a micro-processed product having a three-dimensional three-dimensional structure on the order of μm / nm such as a microlens array has been developed. In this micromachinery technology, a micro-processed product of the order of μm · nm is three-dimensionally formed, so that it is generally difficult to apply the above-described photolithography technology.
[0005]
Therefore, a minute sample is joined. Examples of such joining techniques include thermal diffusion joining and room temperature joining. In the thermal diffusion bonding, as shown in FIG. 16, after two samples W ₁ and W ₂ are brought into close contact with each other in a vacuum vessel 201, the sample is placed on a water-cooled base 202, and about 1000 ° C. by a heater 203. It is easy to cause the diffusion of atoms at the sample junction. Due to the diffusion, diffusion penetration occurs from the surface of the counterpart sample, and joining is achieved.
[0006]
On the other hand, as a relatively new technique, as shown in FIG. 17, there is a technique for performing room temperature bonding by irradiating high-speed atomic beams from energy beam sources 204 and 205. In this room temperature bonding, the surfaces of _two samples W ₁ and W ₂ are irradiated with Ar fast atomic beams to clean and / or activate the surfaces, and then pressure is applied to perform bonding.
[0007]
[Problems to be solved by the invention]
As described above, in the conventional thermal diffusion bonding, a high temperature state must be formed in order to join two samples, and a high temperature durability and cooling system of the entire system including a gripping tool is required. Work time including heating and cooling time becomes longer. Therefore, there are disadvantages such as high work and equipment costs, or large equipment and space.
[0008]
In room temperature bonding, the required degree of cleaning / activation differs depending on the material of the sample to be bonded and the surface condition. For example, when an oxide or the like is attached to the sample surface, it is difficult to activate surface atoms because of its strong bonding force, and high energy is required for cleaning and activating non-metallic surfaces. In conventional room temperature bonding using high-speed Ar beam bombardment of Ar, it is difficult to cope with such a change in conditions and the energy efficiency is poor.
[0009]
Furthermore, in the above-described conventional room temperature bonding, for example, a complicated operation such as bonding another minute sample to a part of one sample or bonding to an arbitrary surface or place of the sample is difficult.
[0010]
The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide a method for joining minute objects capable of forming a microstructure having a three-dimensional structure on the order of μm · nm.
[0011]
[Means for Solving the Problems]
The present invention is a method for joining nanometer or micrometer-order micro objects that irradiate the surfaces of a plurality of samples with an energy beam from an energy beam source, and pressurize the irradiated surfaces in close contact with each other. as the energy beam source, using a parallel plate type fast atom beam source for the acceleration and neutralization of ions with at least one pair of parallel plate electrodes, as the energy beam, high speed of the parallel plate fast atom beam source This is a bonding method characterized by using an energy beam in which energetic ions and fast atoms are mixed at a controlled ratio by controlling the length of the fast atom ejection hole of the atom ejection electrode .
[0012]
An energy beam in which such energetic ions and fast atoms are mixed at a controlled ratio can be cleaned and activated according to the material to be processed or processed, and can be bonded efficiently. . That is, when ions are incident on the insulator, the material is charged up, but irradiation with a neutral high-speed atomic beam has a function of reducing the degree of charge-up. For this reason, since the sample can be irradiated with highly reactive energy ions in a state where the influence of charge-up is small, cleaning and activation can be performed more efficiently than irradiation with only a fast atomic beam. This is the same even in the case of a material that has a strong interatomic bonding force on the surface and is difficult to activate. Furthermore, if a beam with controlled mixing ratio of energetic ions and fast atomic beams is used, the reactive state can be used to control the termination state of surface atoms, enabling efficient surface activation. Become.
[0013]
Further, the present invention is as the energy beam source, and is characterized in the use of parallel plate fast atom beam source for the acceleration and neutralization of ions with at least one pair of parallel plate electrodes. The parallel plate type fast atomic beam source with such an ion acceleration and neutralization mechanism can emit a beam that is superior to the conventional fast atom beam source, and the parallel plate electrode has a fast atom beam. There is an advantage that the neutralization rate can be controlled by controlling the length of the discharge hole.
[0014]
Further, the present invention provides a method for joining minute objects by irradiating the surfaces of a plurality of specimens with an energy beam from an energy beam source and bringing the irradiated surfaces into close contact with each other to pressurize them. A small energy beam source comprising a discharge tube, a gas supply nozzle for supplying gas into the tube, and a beam radiation nozzle having one or more beam radiation holes. This is a method for joining objects.
[0015]
Further, the present invention is characterized in locally performing the energy beam irradiation to the portion of the sample in a state in which the small energy beam source is brought close to the sample.
In the present invention, at least one of the sample to be joined, is characterized in that to form an adhesive layer on the irradiated surface by the energy beam irradiation.
[0016]
Further, the metal surface and the non-metal surface or non-metal surfaces may be joined.
Moreover, when joining nonmetallic surfaces, you may coat a metal film on one surface.
It is also possible to locally rows that Migihitsuji irradiation of the energy beam by disposing a shield having a pattern opening between said energy beam source and the sample.
[0017]
Alternatively, a beam using a reactive gas or a mixed gas of a reactive gas and an unreactive gas such as Ar may be used.
In addition , a bonding apparatus that handles the energy beam source and the sample is movably disposed at a position that surrounds the work area, and by operating these bonding apparatuses, the relative positional relationship between the energy beam source and the sample is adjusted. step may be in the line Migihitsuji a. Here, the above process may be performed while observing the work area in an enlarged manner.
[0018]
【Example】
Embodiments of the present invention will be described below with reference to the accompanying drawings.
FIG. 1 shows an embodiment of an apparatus for performing the joining method of the present invention, in which micro samples W ₁ and W ₂ are placed in a vacuum vessel 1 evacuated by a turbo pump and a rotary pump (not shown). Two stages 2 and 2 to be placed and a parallel plate type fast atomic beam source 3 are installed.
[0019]
This parallel plate type fast atom beam source 3 is a three-pole parallel plate type fast atom beam source, as shown in detail in FIG. In this figure, reference numeral 4 is an outer cylinder made of an insulating material (ceramic), and the upper portion of the outer cylinder 4 is covered with a top plate 6 having an introduction path 5 for introducing a gas G, and a gas introduction is provided below it. A plate-like cathode 8 having holes 7, a plate-like anode 10 having anode holes 9, and a plate-like cathode 12 having atom emission holes 11 are sequentially provided in parallel.
[0020]
In the fast atomic beam source 3, a high-frequency electric field 13 is applied between the two upstream plate electrodes 8 and 10, and a DC electric field is applied between the downstream plate electrodes 10 and 12. Thus, high-density plasma P ₁ is formed on the upstream space, a DC discharge plasma P ₂ high density affected by this downstream space is formed. The positive ions accelerated between the downstream electrodes are accelerated toward the cathode 12 having the fast atom emission holes 11 and exchange electric charges with the residual gas gas particles when passing through the fast atom emission holes 11. Neutralization is performed, and a high-speed atomic beam B is emitted.
[0021]
The parallel plate type fast atomic beam source 3 having such an ion acceleration and neutralization mechanism can emit a beam superior in straightness as compared with the conventional fast atomic beam source, There is an advantage that the neutralization rate can be controlled by controlling the length t. The relationship between the length t of the fast atom emission hole 11 and the neutralization rate is shown in FIG.
[0022]
In the parallel plate type fast atomic beam source 3, the neutralization rate can be arbitrarily changed depending on the shape of the fast atom emission electrode 12, so that the sample can be cleaned and activated efficiently. In this example, one is glass and the other is metal. However, the beam having a neutralization rate of 70% is used to efficiently clean and activate the metal surface and the surface of the glass, which is an insulating material. As the gas, Ar gas or a high-speed atomic beam using a gas in which a fluorine-containing gas such as F ₂ or SF ₆ gas is mixed in the Ar gas by about 5% to 40% is used.
[0023]
In this case, a high-speed atomic beam source may be used for each of the metal sample and the glass sample, and Ar gas beam irradiation is performed on the metal sample in correspondence with each gas. The glass may be irradiated with a mixed gas of Ar and fluorine-containing gas. After irradiation with the beam, the beam irradiation surfaces of the two samples are brought into close contact with each other and pressed to achieve room temperature bonding.
[0024]
FIG. 4 shows another example of the fast atomic beam source 3 of the two-pole parallel plate type. A high voltage is applied between the upstream anode 10 and the cathode 12 having the fast atom emission holes 11 to cause glow discharge to generate plasma P. Positive ions in the plasma P are accelerated in the direction of the cathode 12, and charge exchange with residual gas particles is performed in the fast atom emission hole 11 to neutralize. The fast atom beam B neutralized in this manner is emitted from the fast atom emission hole 11. Also in this example, the neutralization rate can be controlled by controlling the length t of the fast atom emission hole 11.
Next, a method for locally bonding a minute object to a larger object will be described. In this case, the above-described parallel plate type energy beam source can be used, but a small energy beam source 40 as shown in FIG. 5 may be used. In this energy beam source, three electrodes 45, 46 and 47 are attached to a discharge tube 41 made of Pyrex glass or quartz glass, and the intermediate electrode 46 has a ring shape. The downstream electrode 47 includes a beam radiation nozzle 42 having a beam radiation hole. The upstream electrode 45 includes a gas supply nozzle 43 that supplies gas into the discharge tube 41. There may be one or more beam radiation holes.
[0026]
The energy beam source 40 can form beams of different energy states and particle types by changing the type of gas, the type of voltage applied to the discharge electrodes 45, 46, 47, and the like. Then, by being operated by the manipulator as described above, etching, film formation, bonding, adhesion, and the like can be performed at an arbitrary place of the sample.
[0027]
Next, a working apparatus A for performing the joining work using the energy beam source will be described with reference to FIG. This apparatus is installed in a support base 101 placed in a central work area, a gripping device 102 and an energy beam source 40 installed in a first space area surrounding the support base 101, and a second space area surrounding the support base 101. A pair of magnified observation devices (scanning secondary electron microscopes) 104 and 105 are provided.
[0028]
The support base 101 is installed at the center of the base 106, and the support base 101 includes an XYZ stage and can be translated in a horizontal plane and in a vertical direction. A pair of semicircular arc-shaped (first) rails 107 and 108 are provided facing each other at a position surrounding the support base 101 on the base 106, and sliders 109 and 110 are slidably attached thereto. Yes. Each of the sliders 109 and 110 is provided with arc-shaped columns 111 and 112 having a predetermined length, and these columns 111 and 112 are further provided with sliders 113 and 114. These sliders 113 and 114, the manipulator (gripping device) 102 and an energy beam source 40 to operate by gripping the workpiece _{W 1,} respectively.
[0029]
A pair of second rails 115, 116 are provided concentrically with the first rails 107, 108 on the outer side of the first rails 107, 108 on the base 106. 118 is slidably mounted. Each slider 117, 118 is provided with arc-shaped columns 119, 120 having a predetermined length, and these columns 119, 120 are further provided with sliders 121, 122. Are provided with electron microscopes 104 and 105 (enlargement monitoring device). One of these columns 119, 120 extends to the top of the work area, so that the work area can be observed from directly above. Each slider 109, 110, 113, 114, 117, 118, 121, 122 incorporates a predetermined driving mechanism such as a motor and can be moved to a predetermined position by remote operation from the outside.
[0030]
In order to perform the above-described joining operation using the working apparatus A and the energy beam source 40, first, two minute objects W ₁ and W ₂ are placed on the support base 101. Then, the energy beam source 40 is held by the second manipulator 103, moved onto _one minute object W1, and beam irradiation is performed as shown in FIG. 7A. Fines W ₁ is, Si, semiconductor materials such as GaAs, a metal material, an insulating material such as ceramics or polyimide resins or the like is used. This is irradiated with a fast atomic beam B using Ar gas. Then, by driving the slider 114 to move the beam source 40 on the other of the sample _{W 2} on the support base 101, the mask 31 is held by the first manipulator 102, as shown in FIG. 7 (B), minute Similarly, a part of the object W ₂ is irradiated with a fast atomic beam B of Ar gas.
[0031]
In the present embodiment of irradiating only the fast atom beam in a portion joining the minute substances W _1, using a mask 31 with perforated pattern holes, only irradiated with fast atom beam B portion to perform bonding. The second manipulator 103 is allowed to reverse the other of the sample during this period, and, at the end of the beam, placed on the irradiated portion 32 of the sample W ₂ as shown in FIG. 7 (C), needs In response, a force is applied for joining. In the portion irradiated with the energy beam B, the deposits and oxide layer on the surface are removed, the atomic / molecular layer is exposed, and both are joined by pressing.
[0032]
Usually, when either one of the minute objects W ₁ and W ₂ or one of the bonding surfaces is a metal, bonding can be performed by irradiating an inert gas particle such as Ar with high-speed atomic beam. In addition, when the bonding surface is a non-metal such as ceramics, bonding is possible by irradiating a fast reactive atomic beam of chemically reactive gas particles and controlling the bonding state between atoms on the bonding surface. .
[0033]
FIG. 8 shows a method for joining micro objects according to another embodiment of the present invention, in which an energy beam from an energy beam source is irradiated on the surface of the micro object to form an adhesive layer on the irradiated surface. is there. In FIG. 8 (A), on one surface of the fines W _1, gas particles having adhesion, using a fast atom beam B such clusters to form an adhesive layer 35. Next, as shown in FIG. 8 (B), by using a part mask 31 perforated pattern hole in the fines W _2, cleaning of the surface by irradiating a fast atom beam of Ar gas only to the portion you want to adhesion I do.
[0034]
Then, the adhesive part 36 of the fines W ₂ as shown in FIG. 8 (C), placing the fine product W ₁ was applied an adhesive layer 35. The minute objects W ₁ and W ₂ are handled by a manipulation system and an enlarged observation function of an electron microscope or an optical microscope. Then, the two samples are handled, and the bonding portion is brought into intimate contact with pressure to achieve bonding.
[0035]
As the energy beam, for example, a radical beam using adhesive polymer gas particles or the like, or a low energy high-speed atomic beam is preferable. In addition, an electromagnetic beam such as an ion beam, an electron beam, or an X-ray is effectively used as an energy beam in combination with a workpiece or an adhesive material, and thus departs from the spirit of the present invention. Various alternative embodiments are possible without.
[0036]
FIG. 9 shows an example of a semiconductor device formed by repeating the above-described steps. In this example, five micro samples W _{2 to} W ₆ are bonded to a Si sample mother chip W _1. Yes. Sample _{W 2} is a micro-sample of Si. When joining this, the beam from the parallel-plate fast atom beam source 3 using Ar gas, perform bonding mother chip W ₁ and the fine small Si chip FIRST. The sample W ₃ is made of an Al material, and the micro sample W ₃ and the mother chip W ₁ are locally cleaned and activated using the small energy beam source 40 using Ar gas. For this purpose, the pattern mask 31 is used to clean and activate only the bonding location of the micro sample W ₃ of the mother chip W ₁ . This is the mother chip W ₁ has already provided an electrical circuit and sensor function, when the irradiation of the energy beam is performed to the wiring other than the joints, because damage caused by function is impaired.
[0037]
Micro sample _{W 4} and _{W 6} being a glass sample, the micro sample _{W 5} is a ceramic. Of these, the small energy beam source 40 using a mixed gas of Ar and fluorine gas or the parallel plate type fast atom beam source 3 is used for joining the micro samples W ₄ and W ₅ , and a pattern is formed as necessary. The beam irradiation location is selected using the mask 31. Further, the micro sample W ₆ is made of glass, and in order to join the micro samples W ₄ and W ₆ , the parallel plate type fast atomic beam source 3 using a mixed gas of Ar and fluorine-containing gas or a small energy beam source 40 was used to clean and activate the bonding surface and bond. At this time, the applied voltage of the parallel plate type fast atomic beam source 3 and the small energy beam source 40 is used between 1 kV and 5 kV.
[0038]
At this time, the operator performs the above operation by operating the drive mechanism while appropriately observing both the screen of the magnification observation apparatus (electron microscope) 105 and the visual field with the naked eye. As the magnification observation device 105, an appropriate observation device such as an optical microscope or a laser microscope may be used, or a plurality of combinations of these may be used depending on the purpose. In the above description, one beam source is used. However, if two beam sources are used, two samples can be irradiated simultaneously, and the time from irradiation to bonding is shortened. In this way, it is possible to efficiently join a plurality of complex shapes and dissimilar material samples in the same vacuum, which has been difficult with the present invention.
[0039]
As the energy beam source 40, as shown in FIG. 10, a coil 48 is installed in the center of the discharge tube 41, and a high frequency voltage is applied to the coil 48 corresponding to the intermediate electrode to generate plasma in the discharge tube 41. It is also possible to use a device that generates plasma with a higher density than that of the capacitive type. In the embodiment shown in FIG. 11, the intermediate electrode is a ring-shaped electrode 46 or a coil 48, a high frequency voltage is applied to both, and the other electrodes 45 and 47 are electrically connected to the ground. A source gas for forming radical particles is introduced from the gas supply nozzle 43 of the upstream electrode 45, and plasma is formed in the discharge tube 41 by high frequency discharge. Radical particles in the plasma are accelerated by the pressure difference between the inside and outside of the beam radiating nozzle 42 and are emitted from the beam radiating nozzle 42, and are irradiated onto the sample disposed downstream thereof. In this way, radical particles can be released by grounding the upstream and downstream electrodes 45 and 47, applying a high-frequency voltage to the intermediate electrodes 46 and 48, and controlling the applied voltage.
[0040]
12 and 13 generate the convergent beam so that the beam generation source 40 is focused on the samples W ₁ and W ₂ . In these examples, the shapes of the upstream electrode 45 and the beam emission electrode 47 are devised. For example, in FIG. 12, the shapes of the electrode surfaces 45a and 47a are processed into a spherical shape with the convergence point as the center, and beam emission holes are provided on the surfaces. In such a configuration, the density of the beam is increased and the irradiation range can be limited as compared with the case where charged particles are accelerated in parallel and extracted as a beam. Therefore, as shown in FIG. 12, after the two samples W ₁ and W ₂ are placed in close proximity to each other and sequentially irradiated, the active state of the irradiated surface is maintained without greatly moving them. It can be joined as it is.
[0041]
In the configuration as shown in FIG. 12, when it is difficult to produce a spherical surface of the beam emission electrode 47a, the beam emission electrode 47a can be sharpened as shown in FIG. This also makes it easier for the electric field to concentrate, and the acceleration direction of ions concentrates on the sharpened portion, and the beam converges.
[0042]
FIG. 14 shows another embodiment of the energy beam source 50 used in the present invention. This apparatus can generate a plasma P in a minute region and perform local processing. That is, a thin tube (plasma holding chamber) 52 for holding plasma is provided at the distal end of the large-diameter tube 51, an electrode 53 is installed at the proximal end, and the distal end emits an energy beam in at least two directions. A hole 54 is formed.
[0043]
In order to perform the joining by the energy beam source 50, the two minute objects W ₁ and W ₂ are supported close to each other by a predetermined angle using a manipulator, and the energy beam source is also supported by the manipulator between them. Insert the tip between the samples. Then, both samples are irradiated with an energy beam at the same time to retract the beam source 50, and then the two samples W ₁ and W ₂ are joined. According to the energy beam source 50, the beam irradiation can be performed in a state in which two samples are simultaneously brought close to each other with one energy beam source, so that the time from irradiation to bonding is shortened. Therefore, strong bonding is performed without reducing the activity of the irradiated surface.
[0044]
【The invention's effect】
As described above, according to the present invention, it is possible to bond and bond microscopic objects on the order of μm / nm. Therefore, it is possible to bond various structures in microlens arrays, micromachineries, etc. It is significant to provide new manufacturing technology.
[Brief description of the drawings]
BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is an explanatory diagram of a method for bonding micro objects according to an embodiment of the present invention.
FIG. 2 is an embodiment of an energy beam source for carrying out the method for bonding micro objects according to the present invention.
FIG. 3 is a graph showing a neutralization rate characteristic of the energy beam source of FIG. 2;
FIG. 4 is another embodiment of an energy beam source for carrying out the method for bonding micro objects according to the present invention.
FIG. 5 is an example of a small energy beam source for carrying out the method for bonding micro objects according to the present invention.
FIG. 6 is a perspective view showing a working device for carrying out the method for joining micro objects according to the present invention.
FIG. 7 is a diagram showing a method for joining minute objects according to the present invention.
FIG. 8 is a diagram showing another embodiment of the method for bonding micro objects according to the present invention.
FIG. 9 is a diagram showing another embodiment of the method for bonding micro objects according to the present invention.
FIG. 10 is another embodiment of a small energy beam source for carrying out the method for bonding micro objects according to the present invention.
FIG. 11 is another embodiment of a small energy beam source for carrying out the method for bonding micro objects according to the present invention.
FIG. 12 is another embodiment of a small energy beam source for carrying out the method for bonding micro objects according to the present invention.
FIG. 13 is another embodiment of a compact energy beam source for carrying out the method for bonding micro objects according to the present invention.
FIG. 14 is another embodiment of a compact energy beam source for carrying out the method for bonding micro objects according to the present invention.
FIG. 15 is another embodiment of a small energy beam source for carrying out the method for bonding micro objects according to the present invention.
FIG. 16 is an example of a conventional method for joining minute objects.
FIG. 17 is an example of a conventional method for joining minute objects.
[Explanation of symbols]
W ₁ , W ₂ ... W ₆ Minute object 3 Parallel plate type fast atomic beam source 40, 50 Small energy beam source B Energy beam 30, 32 Joint surface 35 Adhesive layer

Claims (8)

In the method of joining nanometer or micrometer order micro objects that irradiate the surface of a plurality of specimens with an energy beam from an energy beam source, and pressurize the irradiated surfaces in close contact with each other.
As the energy beam source, a parallel plate type fast atomic beam source that accelerates and neutralizes ions using at least one pair of parallel plate electrodes,
As the energy beam, by controlling the length of the fast atom emission hole of the fast atom emission electrode of the parallel plate fast atom beam source, the energy beam is a mixture of energy ions and fast atoms mixed at a controlled ratio. A bonding method comprising using As picture Nerugi over beam source, using a parallel plate type fast atom beam source for the acceleration of the ions and neutralized with at least one pair of parallel plate electrodes,
As the energy beam, by controlling the length of the fast atom emission hole of the fast atom emission electrode of the parallel plate fast atom beam source, the energy beam is a mixture of energy ions and fast atoms mixed at a controlled ratio. Use
A method for joining nanometer- or micrometer-order microscopic objects characterized by irradiating the surfaces of a plurality of specimens with an energy beam from the energy beam source and bonding the irradiated surfaces together to pressurize them. . The energy beam having a neutralization rate of 70% of Ar gas or fluorine-containing Ar gas is irradiated to each of a metal sample and a glass sample, and after irradiation of the beam, the beam irradiation surfaces of the two samples are brought into close contact with each other and pressurized. 3. The method for bonding nanometer- or micrometer-order minute objects according to claim 1 or 2, wherein bonding is performed. In the method of joining nanometer or micrometer order micro objects that irradiate the surface of a plurality of specimens with an energy beam from an energy beam source, and pressurize the irradiated surfaces in close contact with each other.
As the energy beam source, a small energy beam source configured to include a discharge tube, a gas supply nozzle for supplying a gas into the tube, and a beam radiation nozzle having one or more beam radiation holes ,
As the energy beam, the joining method of minute substances characterized by Rukoto using energy ions and fast atom energy beams are mixed by controlling the ratio. 5. The method for bonding micro objects according to claim 4 , wherein the irradiation of energy beam is locally performed on a part of the sample in a state where the small energy beam source is brought close to the sample. At least one of the sample to be bonded, the bonding method of claims 1 to serial mounting of fine material to any of the 5 and forming an adhesive layer on the irradiated surface by the energy beam irradiation. Bonding of fines according to any claims 1 and performing locally 6 of the irradiation of the energy beam the shield is arranged with a pattern opening between said energy beam source and said sample Method. An assembly apparatus for handling the energy beam source and the sample is movably disposed at a position surrounding the work area, and the above steps are performed while adjusting the relative positional relationship between the energy beam source and the sample by operating these assembly apparatuses. joining method of claims 1 to 7 minute product according to any one of and performing.

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