JP3426062B2 - Film formation method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a film having an arbitrary pattern on an arbitrary surface of a minute component such as a micromachine or a semiconductor element.

[0002]

2. Description of the Related Art Conventionally, in order to form a film on a surface of a minute part such as an electronic part, a precision machine part, a medical part, it is generally performed by vacuum vapor deposition or sputter film formation.

In vacuum deposition, as shown in FIG. 11, a film forming material 3 is heated by a heater 5 in a vacuum container 1, and vapor of the film forming material generated by melting the film forming material is processed on a substrate or the like. A film forming surface 9 is formed by scattering and adhering to and depositing on the surface of the object 7. Examples of heating methods include energization heating, discharge heating, and electron beam heating.

In sputter film formation, as shown in FIG. 12, a target 13 made of a film forming material is first irradiated with a high energy beam such as an ion beam from a beam source 11 in a vacuum chamber 1, and the target 13 is irradiated from the target. The sputtered particles 15 that are subsequently released collide with the surface of the workpiece 7 to be attached and deposited.

[0005]

However, in all of the conventional film forming methods, only a specific surface of the workpiece is uniformly formed, and an arbitrary surface of the workpiece is formed. Alternatively, it is not possible to form a film having an arbitrary pattern at a position. For this reason, it is extremely difficult to combine a plurality of minute parts to create a high-performance part or to form a film on a part having a complicated shape.

That is, in order to combine a plurality of minute parts or to form a film on a part having a complicated shape, it is necessary to form a desired pattern shape on an arbitrary surface of a minute part or a restricted place. However, the conventional film forming method can only form a uniform film and cannot satisfy the above requirements.

Accordingly, an object of the present invention is to provide a method capable of removing the above-mentioned conventional defects and forming a film having an arbitrary pattern shape on an arbitrary surface or place of a minute component.

[0008]

First, the present invention irradiates a surface of a workpiece with a beam having good directivity emitted from a beam source for generating a low-energy film-forming gas particle beam. The object is achieved by providing a method of moving the beam source and a workpiece relative to each other to form a film on a desired surface or position of the workpiece.

[0009] Secondly, the present invention is directed emitted from the beam source for generating a film forming gas particle beam low energy
In order to irradiate the surface of the work with a beam having good properties to form a film, the beam from the beam source is applied to the work through a mask having holes of a predetermined pattern, and the beam source, the mask and the work The above object is achieved by providing a method of forming an arbitrary film-forming pattern on an arbitrary surface or position of a workpiece by moving the workpiece relative to each other.

Thirdly, according to the present invention, a film-forming material is applied in advance on the work piece or a film-forming gas is supplied, and the surface of the work piece is irradiated with an electron beam having a high directivity from a beam source. To provide a method for forming an arbitrary film formation pattern on an arbitrary surface or position of a workpiece by activating the film forming gas particles and moving the workpiece and the beam source relative to each other. To achieve the above-mentioned object

Fourthly, according to the present invention, a beam source is applied on a work piece in advance by applying a film forming material or by supplying a film forming gas, and a beam source is passed through a mask having a pattern hole of a predetermined shape on the surface of the work piece. By irradiating an electron beam with better directivity to activate the gas particles for film formation, and by moving the beam source, the mask, and the workpiece relative to each other, an arbitrary surface or position of the workpiece can be formed. The above object is achieved by providing a method for forming a film pattern.

Fifth, according to the present invention, a directivity is better than that of a beam source having a predetermined shape electrode on the surface of the workpiece which is coated with a film forming material or is supplied with a film forming gas in advance .
How to form any deposition patterns on any plane or position of the workpiece have been irradiated with an electron beam to activate the film forming gas particles, and by allowed to move relative to the beam source and the workpiece The object is achieved by providing

[0013]

According to the first aspect of the invention, the gas particles serving as the film-forming material are not uniformly irradiated on the entire surface of the workpiece, but are partially converged into a beam having a good directivity to form a partial beam of the workpiece. Since the surface is selectively irradiated and the beam is moved relative to the workpiece, it is possible to form a film having an arbitrary pattern shape on an arbitrary surface or place.

In the second aspect of the invention, the gas particles serving as the film-forming material are not uniformly irradiated on the entire surface of the workpiece, but the surface of the workpiece is partially irradiated with the beam through the mask. Moreover, since the beam source, the mask, and the workpiece are moved relative to each other, it is possible to form a film having an arbitrary pattern shape on an arbitrary surface or place.

In the third aspect of the invention, the film-forming material or the gas particles to be the film-forming material applied in advance is selectively activated on the surface of the workpiece by the focused electron beam having a good directivity. Since the electron beam can be moved relatively with respect to the workpiece, it is possible to perform film formation in any pattern shape on any surface or place.

In the fourth aspect of the present invention, the film-forming material or the gas particles to be the film-forming material, which has been applied in advance, is partially irradiated by the electron beam irradiated onto the surface of the workpiece through the pattern hole of the mask having the predetermined shape. Since the beam source, the mask, and the workpiece can be moved relative to each other by activating the film, the film having an arbitrary pattern shape can be formed on an arbitrary surface or place.

According to the fifth aspect of the invention, the film-forming material or the gas particles to be the film-forming material applied in advance is partially activated on the surface of the workpiece by an electron beam having a predetermined shape. Since the film is formed and the electron beam can be moved relative to the workpiece, it is possible to form a film having an arbitrary pattern shape on an arbitrary surface or place.

[0018]

Embodiments of the present invention will be described below with reference to FIGS.

FIG. 1 shows an embodiment of the present invention.
In the embodiment, the surface of the object to be processed 25 is irradiated with the low energy beam 21 using the gas for film formation through the mask 23 having a pattern hole, so that a mask pattern is formed on the surface of the object to be processed. The film formation 27 having the same pattern shape is performed.

As the low-energy beam 21, a low-energy high-speed atomic beam, an ion beam, a molecular beam, or an atomic beam having a low energy suitable for film formation and having an energy beam of about 0.1 eV to 200 eV can be used. Further, a beam diameter of 1 μm to 30 cm can be used.

Further, as the mask 23, a pattern mask made of electroforming, a wet-etched stainless steel, a pattern hole made in the stainless steel by an excimer laser, and a more accurate pattern mask by the LIGA process are used. Ni made
A mask or the like can be used.

As the film forming gas, various kinds can be used depending on the film forming material. For example, a gas such as methane gas, aluminum chloride, silicon tetrachloride, or tungsten fluoride can be used as argon or helium. Use the one diluted with. The film formed according to the present invention can be formed into various materials such as metals, ceramics, resin materials, plastics, and composite materials thereof, and gas or vapor depending on these film forming materials is used.

While controlling the distance, parallelism, relative position and the like between the mask 23 and the workpiece 25 by the positioning devices 29 and 31, the low energy beam 2 using the above film forming gas is used.
By irradiating 1 to the workpiece 25 through the pattern hole of the mask 23, the mask pattern film 27 can be formed at a predetermined position of the workpiece.

In the figure, the mask 23 is linearly moved along the X, Y, and Z axes, and the workpiece 25 is linearly moved along the X and Y axes, respectively. May be rotated around at least one of the X, Y, and Z axes. Further, instead of moving both the mask and the workpiece, only one may be moved.

FIG. 2 shows another embodiment of the present invention, in which an electron beam is used as the low energy beam 21a. In this case, the film forming material 33 is uniformly applied to the surface of the workpiece 25 in advance, or the film forming gas 35 is supplied simultaneously with the electron beam 21a. By irradiating the film forming material 33 or the film forming gas 35 on the work piece 25 with the electron beam 21a through the mask 23, the film forming material or the film forming gas is activated on the surface of the work piece. A mask pattern-shaped film 27 is formed.

The relative movement between the mask and the workpiece is
At least one may be moved with respect to the other.

FIG. 3 shows another embodiment of the present invention, in which the workpiece 25a can be linearly moved along the XY axes by a positioning device (not shown), and It is possible to control the rotation around the XY axes, which allows the mask pattern film 27 to be formed on an arbitrary surface and an arbitrary position of the workpiece 25a. The workpiece 25a can be further linearly moved along the Z axis and rotated about the Z axis. Further, not only the workpiece, but also the beam source 20 and / or the mask are linearly moved around the workpiece along at least one of the X, Y, and Z axes, and at least one of the X, Y, and Z axes is moved. It can also be rotated around one.

If an electron beam is used as the low-energy beam 21 in the embodiment of FIG. 3, the film-forming material 33 should be applied beforehand to the surface of the workpiece 25a as in the case of FIG. Alternatively, the electron beam and the film forming gas are simultaneously supplied.

FIG. 4 shows still another embodiment of the present invention, in which the beam is converged into a focused beam 21b.
The target beam 25a is directly irradiated with the convergent beam without using a mask, and the target device 25a is linearly moved along the XY axes and moved along the X and Y axes by a positioning device (not shown).
The beam source 20 is rotatable about the Y axis and the beam source 20 is rotatable about the XY axes. Converging beam is 0.1
having a beam diameter of nm to 10 nm, or 10 nm to 1 μm, or 1 μm to 100 μm, preferably 10
The thickness of nm to 1 μm is used. By linearly moving the workpiece 25a and the beam source 20 along the XY axes and controlling the rotation around the XY axes, it is possible to perform film formation in an arbitrary pattern on an arbitrary surface and position of the workpiece 25a. .

When an electron beam is used as the beam 21b in this embodiment, a film forming material is applied in advance on the surface of the workpiece as in the case of FIG. 2, or the electron beam and film are formed. Supply gas for use simultaneously.

FIG. 5 shows a case where the film forming method of FIG.
A film 27 having a desired pattern shape is formed on the surface of a workpiece having a complicated shape with steps formed by combining two minute parts 25b and 25c.

FIG. 6 shows still another embodiment of the present invention. In this embodiment, the beam 21c emitted from the beam source 20 has a predetermined pattern shape, and the work piece is XY. It can be moved linearly along the axis and can be rotated around the XY axes, so that a film 27 having a predetermined pattern can be formed on any surface and position of the workpiece 25a without using a mask. It can be performed.
The beam having a predetermined pattern can be obtained by setting the shape of the electrode 20a of the beam source 20 to a desired pattern shape.

FIG. 7 shows an example of a system for carrying out the film forming method according to the present invention. In this system, the workpiece 25 can be linearly moved along the XY axis by the XY stage 39, and the rotation devices 41 and 43 provided on the XY stage rotate around the X axis and the Z axis passing through the center of the workpiece 25. The beam source 20 can be linearly moved along the X, Y, and Z axes by the manipulator 53 including the XY stage 45, the Z stage 47, and the rotating devices 49, 51. It is rotatable. In this embodiment, the beam source 20 is a convergent beam having a beam diameter of 0.1 nm to 100 μm.
When the masks shown in FIGS. 1 to 3 and 6 are used, a non-focused beam having a beam diameter of 1 μm to 30 cm can also be used.

Further, in this system, since the work piece 25 is minute and it is difficult for human eyes to position it, an optical microscope, a laser microscope, and a scanning type microscope are used to grasp the film formation position and the film formation state. A microscope 55 such as an electron microscope is used. Further, the film formation is usually performed in a vacuum container 57, and the XY stage 39 for the workpiece, the manipulator 53 for moving the beam source, and the microscope 55 are installed in the vacuum container 57, and the workpiece is processed from the outside of the vacuum container. The beam positioning and film deposition operations are controlled.

8 to 9 show a method of manufacturing a three-dimensional microstructure using the energy beam source according to the sixth embodiment of the present invention.

At the stage (A) of part processing, the workpiece 61
Then, the fine openings 62A and 62B are formed by using the energy beam sources 60A and 60B. Here, the workpiece 61
Is, for example, a silicon single crystal or a polyimide resin. Next, in the assembling step (B), the manipulator 64A is used to insert into the opening a round bar 65 of stainless material having a diameter of, for example, 300 μmφ which fits into the opening 62A. Further, in the opening 62B, a flat plate 66 made of, for example, a silicon single crystal, which fits in the opening 62B, is also provided in the manipulator 64B.
Insert by. Then, in the bonding step (C), the energy beam source 60A is rotationally moved on the conical surface around the Z axis as shown in the drawing to irradiate the contact portion between the opening 62A and the round bar 65 with the radical beam of the reactive gas particles. . Similarly, the energy beam source 60B is moved in translation to irradiate the contact portion between the flat plate 66 and the opening 62B with the radical beam of the reactive gas particles. By radiating the radical beam of the reactive gas particles, an adhesive 67 for adhering different kinds of materials is formed, and the round bar 65 and the flat plate 66 are joined to the workpiece 61.

In FIG. 9, the round bar 65 is inserted into the opening 62A of the workpiece 61, and the contact portion is irradiated with a radical beam, whereby the adhesive 67 is locally deposited and bonded. Is shown.

FIG. 10 shows an example of joining dissimilar materials by an energy beam source using high frequency plasma according to the seventh embodiment of the present invention.

In the beam sources 60A and 60B, the insulating tube 71 is used.
The upstream electrode 15 and the downstream electrode 77 are grounded. Then, a high frequency voltage is applied to the intermediate electrode 76. Alternatively, a positive voltage may be applied to the upstream electrode 75. The intermediate electrode may be a capacitively coupled type or an inductively coupled type, and in the case of the capacitive type, a ring type electrode is used,
In the case of the induction type, a coil is used. In the present embodiment, the high frequency voltage of the intermediate electrode 76 activates the oscillating motion of electrons, and plasma is generated. The positive ions in the plasma are accelerated by the acceleration bias toward the downstream electrode 77 having the beam emission hole 72, and the beam emission hole 72 is neutralized. In addition, a positive voltage is applied to the downstream electrode 7
7, and the upstream electrode 75 is connected to the ground, it becomes possible to radiate the fast atom beam generated from the negative ions in the plasma.

In the present embodiment, a radical emission nozzle 79 is provided at the tip of the downstream electrode to enable local film formation. The radical releasing nozzle 79 attached to the tip has an inner diameter of about 0.1 to 3 mm, and a micro hole for forming an ultrafine beam having a hole of 0.1 nm to 10 μm may be attached to the tip.

In the present embodiment, the work piece 61 has a fine cylinder 6
In this example, 5 is inserted, then local film formation is performed on the insertion portion, and the minute cylinders 65 and the workpiece 61 are bonded and joined. In this example, the diameter of the minute cylinder 65 is 10 nm to 100 μm.
It is a degree. An assembling hole is formed in the work piece 61 by a high-speed atom beam from the energy beam source of the above-mentioned embodiment,
Assembled there with a micro handling device under a magnifying observation device, and then changed the applied voltage for film formation,
Alternatively, other energy beam sources are aligned.
Then, as shown in FIG. 10, by irradiation with a radical beam, the combined portion is locally formed to strengthen the bonded / bonded state.

The position of the insert and the position of the energy beam irradiation position of the energy beam source are adjusted by observing with an SEM (scanning electron microscope) or an optical microscope, and a manipulator capable of fine position movement, or It is performed by a rotating / translating stage with a fixed sample or beam source. In the present embodiment, a small energy beam source is attached to the rotating / translating stage so that a beam having an arbitrary angle can be made incident on the joint portion of the sample. In addition, with the energy beam source side fixed,
Of course, the sample side may be moved by a rotation / translation stage.

As the small-diameter energy beam used for such fine processing, a radical beam of reactive gas particles having a film-forming property or a low-energy high-speed atom beam is used. For example, by using methane gas as a raw material gas for the energy beam source, a radical beam containing carbon (C) is formed, and as the adhesive 67, graphite, diamond-like carbon or the like is generated.

As the gas supplied to the energy beam source, in addition to the above-mentioned methane gas, a gas containing a metal such as tungsten fluoride, aluminum chloride or titanium chloride,
Alternatively, a carbon-based or hydrocarbon-based gas containing C or C—H such as methane described above is used. This allows
As the adhesive material, a tungsten film, an aluminum film, a titanium film, a graphite film, a diamond-like carbon film, a hydrocarbon-containing polymer film, or the like can be formed at the bonding boundary portion. Thereby, adhesion and joining between samples of different materials are performed. Film formation of such an adhesive material is often performed in a vacuum state.

In the method of manufacturing a three-dimensional microstructure using an energy beam source as shown in this embodiment, (1) it is possible to bond and join microstructures of different materials, as well as the same materials in a vacuum state. (2) Local heating does not require heating the entire sample to high temperature. (3) Adhesion and joining of a plurality of fine structures is possible. (4) A complex three-dimensional structure. Even if there is, there is a feature that it can be processed.

For example, in conventional joining by vacuum heating, the whole sample is heated to several hundreds of degrees or more to perform the joining, so that processing cannot be performed in the case of a sample such as a polymer material. Further, in the case of a semiconductor device or the like, heating the entire sample at a high temperature may cause an effect such as impairing its function. However, the above-described fine processing method allows fine processing of a three-dimensional structure without causing these problems.

Although not particularly mentioned, it is desirable that all the film forming methods shown in FIGS. 1 to 10 be carried out in a vacuum atmosphere, and a microscope is used when filming minute parts. However, the method of the present invention is not limited to these. Further, in the above embodiment, the beam, the mask, and the work piece are moved along the orthogonal axis and rotated about the orthogonal axis, but they are moved along the oblique axis and rotated around the oblique axis. You may let me.

[0048]

As described above, according to the present invention,
It is possible to form a film with an arbitrary pattern shape on an arbitrary surface or place of a work, which has been impossible in the past, and thus it is possible to form a film with a desired shape locally on a complicated structure. .

[Brief description of drawings]

FIG. 1 is a perspective view showing an embodiment of the present invention.

FIG. 2 is a perspective view showing a second embodiment of the present invention.

FIG. 3 is a perspective view showing a third embodiment of the present invention.

FIG. 4 is a perspective view showing a fourth embodiment of the present invention.

5 is a perspective view showing a film formed by the example method of FIG.

FIG. 6 is a perspective view showing a fifth embodiment of the present invention.

FIG. 7 is a schematic diagram showing an example of a system for carrying out the method of the present invention.

FIG. 8 is a perspective view showing a sixth embodiment of the present invention.

9 is a perspective view of a stage of joining in FIG.

FIG. 10 is an explanatory diagram showing a seventh embodiment of the present invention.

FIG. 11 is a schematic view showing a conventional film forming method.

FIG. 12 is a schematic view showing a conventional film forming method.

[Explanation of symbols]

21,21a, 21b, 21c beam 23 masks 25,25a Workpiece 27 Deposition

Front Page Continuation (72) Inventor Chusuke Obata 4-2-1 Honfujisawa, Fujisawa-shi, Kanagawa Inside the EBARA Research Institute (72) Inventor Yotaro Hatamura 2-12-11, Kohinata, Bunkyo-ku, Tokyo (72) Invention Person Masayuki Nakao 5-1, Shin-Matsudo, Matsudo-shi, Chiba Shin-Matsudo Central Park House C-908 (56) Reference JP-A-7-216542 (JP, A) JP-A-6-212409 (JP, A) JP-A 64- 53410 (JP, A) JP 63-132203 (JP, A) JP 63-152120 (JP, A) JP 55-32040 (JP, A) JP 3-138356 (JP, A) 57-154767 (JP, U) (58) Fields investigated (Int.Cl. ⁷ , DB name) C23C 14/00-14/58 C23C 16/00-16/56 H01L 21/205 B23K 11 / 00-11/11 B23K 15/00-15/10

Claims (2)

(57) [Claims] 1. A highly directional beam emitted from a beam source for generating a low energy gas particle beam for film formation.
In order to form by irradiating the surface of the workpiece through a mask having a hole of a predetermined pattern, and before Symbol beam source, and the mask,
To other at least one of the workpiece, X, less the Y-axis
Rotate around at least one, X, Y, as needed
By linearly moving along at least one of the Z axes ,
A film forming method comprising forming an arbitrary film forming pattern on an arbitrary plurality of surfaces or a plurality of positions of a workpiece. 2. A mask having a hole having a predetermined pattern formed by applying a film-forming material or supplying a film-forming gas onto a workpiece in advance, and emitting a highly directional electron beam from a beam source on the surface of the workpiece.
A beam source and a mask to activate the film forming material or the film forming gas particles by irradiation through a mask to form a film.
And at least one of the workpiece and the other, X, Y axis
Rotate around at least one of the
Linear movement along at least one of the Y and Z axes
In film forming method comprising the Turkey to form any deposition pattern at any of a plurality of surfaces or a plurality of locations of said workpiece.