CN112366127B - Atmospheric pressure low-temperature plasma jet processing method with solid mask focusing and application - Google Patents

Atmospheric pressure low-temperature plasma jet processing method with solid mask focusing and application Download PDF

Info

Publication number
CN112366127B
CN112366127B CN202011071633.3A CN202011071633A CN112366127B CN 112366127 B CN112366127 B CN 112366127B CN 202011071633 A CN202011071633 A CN 202011071633A CN 112366127 B CN112366127 B CN 112366127B
Authority
CN
China
Prior art keywords
atmospheric pressure
plasma jet
temperature plasma
pressure low
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011071633.3A
Other languages
Chinese (zh)
Other versions
CN112366127A (en
Inventor
刘景全
奚野
刘武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Jiaotong University
Original Assignee
Shanghai Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Jiaotong University filed Critical Shanghai Jiaotong University
Priority to CN202011071633.3A priority Critical patent/CN112366127B/en
Publication of CN112366127A publication Critical patent/CN112366127A/en
Application granted granted Critical
Publication of CN112366127B publication Critical patent/CN112366127B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/336—Changing physical properties of treated surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/338—Changing chemical properties of treated surfaces

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention provides an atmospheric pressure low-temperature plasma jet processing method focused by a solid mask and application thereof, wherein the method comprises the following steps: spin-coating a layer of mask material on the surface of a material to be processed, and forming a solid mask layer after curing; etching the solid mask layer by adopting atmospheric pressure low-temperature plasma jet, and enabling the atmospheric pressure low-temperature plasma jet to penetrate through the solid mask layer, so that a funnel-shaped structure is formed on the solid mask layer, and the atmospheric pressure low-temperature plasma jet is focused; then the atmospheric pressure low-temperature plasma jet flows through the funnel-shaped structure to be contacted with the surface of the material to be processed, and the surface of the material to be processed is subjected to micro processing; and after the etching is finished, removing the solid mask layer. The invention has the advantages of protecting the area which is not required to be processed on the surface of the material to be processed, avoiding the phenomenon of Newton rings at the periphery of the processing area, and simultaneously reducing the processing line width of the atmospheric pressure low-temperature plasma jet, thereby effectively improving the surface processing quality.

Description

Atmospheric pressure low-temperature plasma jet processing method with solid mask focusing and application
Technical Field
The invention relates to the field of material surface processing, in particular to an atmospheric pressure low-temperature plasma jet processing method with solid mask focusing and application.
Background
Atmospheric low-temperature plasma, also known as atmospheric cold plasma or atmospheric non-equilibrium plasma, generally refers to plasma generated under 1 standard atmospheric condition, and the atmosphere generated by the plasma is in a daily air environment or a cavity filled with a special atmosphere. Unlike high temperature plasmas (such as solar core, nuclear fusion, etc.), atmospheric low temperature plasmas are in partial powerOff state, its ionization degree is 10-7～10-4And the electron temperature is much higher than the heavy particle temperature, the plasma is in a non-thermal equilibrium state of partial ionization. Since the atmospheric pressure cold plasma has relatively low gas temperature and high chemical activity, it has become a hot spot of the application research of the plasma technology as a novel gas discharge technology in recent years, and has wide application in many fields.
Through the search discovery for the prior art:
the 'Experimental improvement of photoresist etching by kHz alternating current power supply' is written in Applied Surface Science, 2016 and 385 by Wang Lijun et al, the Western Ann university of transportation, and the research is carried out on the photoresist processed by the atmospheric pressure low temperature plasma jet under the drive of the kHz alternating current power supply, so that the influence of different electrode structures on the etching effect is analyzed, and the Newton ring phenomenon caused by the non-uniform etching exists in the etching area.
Shanghai university of transportation Wang Tao et al written "non-biogenic surfaces properties of party-C film etc by an atmospheric pressure He/O" on Applied Surface Science, 2017,3832micro-plasma jet in ambient air ", using atmospheric low temperature He/O2The plasma jet carries out etching processing on the flexible polymer Parylene-C film, and the surface appearance and chemical composition of an etching area are analyzed, and researches show that the surface of an etching central area is smooth and flat, but a plurality of annular areas with different etching degrees and chemical compositions are also shown at the edge of the etching area.
A Tool for ultra thin Surface Modification at Atmospheric Pressure Plasma Pressure is written by Masaaaki Nagatsu et al, Japan Staight university, USA, in ACS Applied Materials & Interfaces, 2016,8, "Nanocapila Atmospheric Pressure Plasma Jet et, which uses laser drawing to prepare an Atmospheric Pressure low temperature Plasma Jet generating device with a tip size of several microns or hundreds of nanometers, and greatly reduces the processing linewidth of the Atmospheric Pressure low temperature Plasma Jet.
In summary, the atmospheric pressure low-temperature plasma jet processing does not need a graphical mask and a low vacuum processing environment, the processing method is strong in universality and simple to operate, and is not only suitable for surface processing of planar materials, but also capable of realizing surface processing of curved surfaces or heterogeneous materials with complex structures through a multi-axis control platform. However, the existing atmospheric pressure low temperature plasma jet processing method still faces many challenges in reducing the processing line width and improving the quality of the processed surface. For example, the processing line width can be effectively reduced by adopting an atmospheric pressure plasma jet generating device with an opening size of tens of microns or hundreds of nanometers, but the reduction of the size of the generating device causes the increase of the ignition difficulty of plasma, and the surface quality of a processing area is reduced by an excessively strong electric field. In addition, the extension effect of the atmospheric pressure low-temperature plasma jet flow is generated on the surface of the processed material, the concentration of active particles in the plasma jet flow is gradually reduced from the center to the periphery, and the Newton's rings phenomenon appears around the processing area due to different processing degrees, so that the surface processing quality is reduced.
Therefore, it is desirable to provide an atmospheric pressure low temperature plasma jet processing method that can achieve both the reduction of the processing line width and the improvement of the surface processing quality.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide an atmospheric pressure low-temperature plasma jet processing method with solid mask focusing and application thereof.
The invention provides a method for processing atmospheric pressure low-temperature plasma jet by focusing a solid mask, which comprises the following steps:
spin-coating a layer of mask material on the surface of a material to be processed, and forming a solid mask layer after curing;
etching the solid mask layer by adopting atmospheric pressure low-temperature plasma jet, and enabling the atmospheric pressure low-temperature plasma jet to penetrate through the solid mask layer, so that a funnel-shaped structure is formed in a local area of the solid mask layer, and the atmospheric pressure low-temperature plasma jet is focused;
then the atmospheric pressure low-temperature plasma jet flows through the funnel-shaped structure to be contacted with the surface of the material to be processed, and the surface of the material to be processed is subjected to micro processing;
and after the micro-machining is finished, removing the solid mask layer and releasing the material to be machined.
Preferably, the thickness of the solid mask layer is 100nm-50 μm. When the solid mask layer is too thin, the focusing effect is not obvious; when the solid mask layer is too thick, the etching time is too long.
Preferably, the solid mask layer is etched by adopting an atmospheric pressure low-temperature plasma jet, wherein direct-writing micro-processing is realized by adopting an X, Y, Z triaxial displacement platform in an atmospheric pressure low-temperature plasma jet processing platform.
Preferably, the mask material is selected from photoresist or polymethyl methacrylate.
Preferably, a layer of mask material is spin-coated on the surface of the material to be processed, wherein a multi-step spin coating method is adopted.
Preferably, the atmospheric pressure low-temperature plasma jet penetrates through the funnel-shaped structure to be in contact with the surface of the material to be processed, and the micro-processing is carried out on the surface of the material to be processed, wherein the micro-processing comprises etching, surface modification or in-situ deposition on the surface of the material to be processed.
The second aspect of the present invention provides an application of the above-mentioned solid mask focused atmospheric pressure low temperature plasma jet processing method, which includes:
preparing a partially etched plane parylene film;
a method for local surface modification of graphene films;
or for the preparation of locally deposited fluorocarbon thin films.
Compared with the prior art, the invention has at least one of the following beneficial effects:
the processing method provided by the invention creatively provides that the solid mask layer is introduced in the atmospheric pressure and other low-temperature plasma jet processing process, the atmospheric pressure and other low-temperature plasma is firstly adopted to etch through the solid mask layer to form a funnel-shaped structure, the funnel-shaped structure can play a role in focusing the atmospheric pressure and low-temperature plasma jet, the solid mask layer plays a role in protecting a region which is not required to be processed on the surface of a material to be processed, the Newton ring phenomenon at the periphery of the processing region is avoided, and the processing line width of the atmospheric pressure and low-temperature plasma jet is reduced, so that the surface processing quality is effectively improved.
The processing method provided by the invention has the advantages that the processing platform does not need to be upgraded, the process is simple and convenient, and the cost is lower.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic flow chart of a solid mask focused atmospheric pressure low temperature plasma jet processing method in accordance with a preferred embodiment of the present invention;
FIG. 2 is a schematic view of the interaction of the atmospheric pressure low temperature plasma jet with the processing plane in accordance with a preferred embodiment of the present invention;
FIG. 3 is a schematic diagram showing the variation of the cross-sectional profile of the solid mask layer and the material to be processed during the process of using the atmospheric pressure low temperature plasma jet to locally etch the planar Parylene-C film according to a preferred embodiment of the present invention;
fig. 4 is a schematic diagram illustrating a change in the profile of a solid mask layer and a material to be processed when the atmospheric pressure low temperature plasma jet is applied to a local graphene film modification process according to a preferred embodiment of the present invention;
fig. 5 is a schematic diagram showing the profile changes of the solid mask layer and the material layer to be processed during the process of local deposition of fluorocarbon thin film by the atmospheric pressure low temperature plasma jet according to a preferred embodiment of the present invention.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications can be made by persons skilled in the art without departing from the spirit of the invention. All falling within the scope of the present invention.
Example 1
Referring to fig. 1, a flow chart of a solid mask focused atmospheric pressure low temperature plasma jet processing method according to a preferred embodiment of the present invention is shown, which includes the following steps:
s1: as shown in fig. 1 (a), a layer of mask material is spin-coated on the surface of the material layer to be processed, and the mask material is cured, so as to form a solid mask layer on the surface of the material layer to be processed, wherein the thickness of the solid mask layer is 150nm, as shown in fig. 1 (b).
S2: as shown in fig. 1 (c), the solid mask layer is etched by using the atmospheric pressure low temperature plasma jet, and after the solid mask layer is etched by the jet, a funnel-shaped structure is formed in a local area of the etched solid mask layer, so that the atmospheric pressure low temperature plasma jet can be focused.
S3: the atmospheric pressure low-temperature plasma jet flows through the funnel-shaped structure to contact the material layer to be processed and is etched, as shown in (d) in fig. 1, after a period of time, the atmospheric pressure low-temperature plasma jet etches and penetrates the material layer to be processed, and the etching processing of the material to be processed is completed, as shown in (e) in fig. 1; as a preferred mode, the atmospheric pressure low temperature plasma jet processing can use X, Y, Z three-axis displacement platform in the atmospheric pressure low temperature plasma jet processing platform to realize direct-writing micro-processing.
S4: after the atmospheric pressure low-temperature plasma jet etching processing is completed, the solid mask layer is removed, and the material layer to be processed is released, as shown in (f) in fig. 1.
Referring to fig. 2, fig. 2 (a) is a schematic diagram of an interaction state between an atmospheric pressure low-temperature plasma jet and a processing plane after a solid mask is focused, and it can be seen from the diagram that a funnel-shaped structure is formed after the solid mask layer is partially etched and penetrated, the atmospheric pressure low-temperature plasma jet can be focused, a phenomenon of 'newton rings' at the periphery of a processing area caused by an extension effect of the atmospheric pressure low-temperature plasma jet and the processing plane is avoided, a processing line width of a material layer to be processed at a lower layer is reduced, and an actual processing line width of the atmospheric pressure low-temperature plasma jet is close to or smaller than that of the atmospheric pressure low-temperature plasma jet. Fig. 2 (b) is a schematic view of an interaction state between the atmospheric pressure low-temperature plasma jet and the processing plane without using the solid mask, and it can be seen from the diagram that the actual processing line width of the atmospheric pressure low-temperature plasma jet is much larger than that of the atmospheric pressure low-temperature plasma jet due to the extension effect of the atmospheric pressure low-temperature plasma jet and the processing plane.
Example 2
Referring to fig. 3, this embodiment provides an application of the solid mask focused atmospheric pressure low temperature plasma jet processing method for preparing a partially etched planar Parylene-C (Parylene) film, including the following steps:
s11, spin-coating a layer of AZ5206E photoresist on the circular sheet deposited with the Parylene-C film with the thickness of 5 microns, setting the single spin-coating rotating speed to be 1400 revolutions per minute, setting the spin-coating thickness to be about 5 microns, curing for 120 seconds at 120 ℃, and forming a solid mask layer on the Parylene-C film (the material layer to be processed).
S12, using X, Y, Z triaxial displacement platform in the atmospheric pressure low-temperature plasma jet processing platform to realize direct-writing micro-processing, wherein the atmospheric pressure low-temperature plasma jet is based on 150sccm He and 5sccm O2The voltage is set to 12 KV. As shown in fig. 3 (a), the atmospheric pressure low temperature plasma jet etches the solid mask layer, and after the atmospheric pressure low temperature plasma jet cuts through the solid mask layer, a funnel-shaped structure is formed in a local area of the etched solid mask layer, so that the atmospheric pressure low temperature plasma jet can be focused.
And S13, enabling the atmospheric pressure low-temperature plasma jet to penetrate through the funnel-shaped structure to be in contact with the lower Parylene-C film to be processed and etching, as shown in (b) - (C) of the figure 3, and after a period of time, enabling the atmospheric pressure low-temperature plasma jet to penetrate through the Parylene-C film to be processed and completing etching, as shown in (e) of the figure 3.
And S14, after the atmospheric pressure low-temperature plasma jet etching processing is finished, soaking the substrate for 5 minutes by using acetone to remove the solid mask layer, and releasing the Parylene-C film, as shown in (f) in FIG. 3.
Example 3
Referring to fig. 4, the present embodiment provides an application of a solid mask focused atmospheric pressure low temperature plasma jet processing method, and a method for local surface modification of a graphene film, including the following steps:
s21, spin-coating a layer of PMMA electron beam glue on a silicon wafer with a graphene film on the surface, setting the single spin-coating rotating speed to 2000 revolutions per minute, setting the spin-coating thickness to be about 200nm, curing for 300S at 120 ℃, and forming a solid mask layer on the surface of the silicon wafer (material layer to be processed) of the graphene film.
S22, using an atmospheric pressure low-temperature plasma jet processing platform to realize direct-writing micro-processing through a X, Y, Z triaxial displacement platform, wherein the atmospheric pressure low-temperature plasma jet is based on 150sccm Ar and 5sccm N2The voltage is set to 14 KV. As shown in fig. 4 (a), the atmospheric pressure low temperature plasma jet etches the solid mask layer, and after the jet cuts through the solid mask layer, a funnel-shaped structure is formed in a local area of the upper etched solid mask layer, so that the atmospheric pressure low temperature plasma jet can be focused.
And S23, enabling the atmospheric pressure low-temperature plasma jet to penetrate through the funnel-shaped structure to be in contact with the graphene film positioned at the lower layer and carrying out surface modification processing, wherein as shown in (b) - (c) in fig. 4, after a period of time, the atmospheric pressure low-temperature plasma jet completes local surface modification processing of the graphene film, as shown in (d) in fig. 4.
And S24, after the atmospheric pressure low-temperature plasma jet etching processing is finished, soaking the substrate in acetone for 5 minutes to remove the solid mask layer, releasing the graphene film, and forming a modified material layer on the graphene film, as shown in (e) in FIG. 4.
Example 4
Referring to fig. 5, the present embodiment provides an application of the solid mask focused atmospheric pressure low temperature plasma jet processing method, which is a preparation method for locally depositing a fluorocarbon thin film, and includes the following steps:
s31, spin-coating a layer of AZ5206E photoresist on the circular sheet deposited with the Parylene-C film with the thickness of 5 microns, setting the single spin-coating rotating speed to be 1400 revolutions per minute, setting the spin-coating thickness to be about 5 microns, curing for 120 seconds at 120 ℃, and forming a solid mask layer on the surface of the Parylene-C film (the material layer to be processed).
And S32, using an atmospheric pressure low-temperature plasma jet processing platform to realize direct-writing micro-processing through a X, Y, Z triaxial displacement platform, wherein the atmospheric pressure low-temperature plasma jet is based on an atmosphere of 150sccm He, and the voltage is set to be 14 KV. As shown in fig. 5 (a), the atmospheric pressure low temperature plasma jet etches the solid mask layer, and after the jet penetrates through the solid mask layer, a funnel-shaped structure is formed in a local area of the etched solid mask layer, so that the atmospheric pressure low temperature plasma jet can be focused.
S33, when the atmospheric pressure low-temperature plasma jet flows through the funnel-shaped structure and contacts the Parylene-C film at the lower layer, the concentration of 5sccm C is increased3F8The fluorocarbon thin film deposition processing is performed in the atmosphere, as shown in (b) - (c) of fig. 5, and after a period of time, the atmospheric pressure low-temperature plasma jet flow completes the local surface modification processing of the graphene thin film, as shown in (d) of fig. 5.
S34, after the atmospheric pressure low-temperature plasma jet etching processing is finished, soaking the substrate for 5 minutes by using acetone to remove the solid mask layer, releasing the Parylene-C film, and forming a deposition material layer on the surface of the Parylene-C film, as shown in (e) in FIG. 5.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention.

Claims (7)

1. A method for processing atmospheric pressure low-temperature plasma jet flow focused by a solid mask is characterized by comprising the following steps:
spin-coating a layer of mask material on the surface of a material to be processed, and forming a solid mask layer after curing;
etching the solid mask layer by adopting atmospheric pressure low-temperature plasma jet, and enabling the atmospheric pressure low-temperature plasma jet to penetrate through the solid mask layer, so that a funnel-shaped structure is formed in a local area of the solid mask layer, and the atmospheric pressure low-temperature plasma jet is focused;
then the atmospheric pressure low-temperature plasma jet flows through the funnel-shaped structure to be contacted with the surface of the material to be processed, and the surface of the material to be processed is subjected to micro processing;
and after the micro-machining is finished, removing the solid mask layer and releasing the material to be machined.
2. The method of claim 1, wherein the thickness of the solid mask layer is 100nm to 50 μm.
3. The solid state mask focused atmospheric pressure low temperature plasma jet processing method of claim 1,
and etching the solid mask layer by adopting atmospheric pressure low-temperature plasma jet, wherein direct-writing micro-processing is realized by adopting an X, Y, Z triaxial displacement platform in an atmospheric pressure low-temperature plasma jet processing platform.
4. The method as claimed in claim 1, wherein the mask material is selected from photoresist or polymethyl methacrylate.
5. The method of claim 1, wherein a layer of mask material is spin coated on the surface of the material to be processed, wherein a multi-step spin coating method is used.
6. The solid state mask focused atmospheric pressure low temperature plasma jet processing method according to claim 1, characterized in that the atmospheric pressure low temperature plasma jet is then contacted with the surface of the material to be processed through the funnel-shaped structure to perform micro-processing on the surface of the material to be processed, wherein the micro-processing comprises etching, surface modification or in-situ deposition on the surface of the material to be processed.
7. Use of a solid state mask focused atmospheric pressure low temperature plasma jet process according to any of claims 1 to 6, comprising:
preparing a partially etched plane parylene film;
a method for local surface modification of graphene films;
or for the preparation of locally deposited fluorocarbon thin films.
CN202011071633.3A 2020-10-09 2020-10-09 Atmospheric pressure low-temperature plasma jet processing method with solid mask focusing and application Active CN112366127B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011071633.3A CN112366127B (en) 2020-10-09 2020-10-09 Atmospheric pressure low-temperature plasma jet processing method with solid mask focusing and application

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011071633.3A CN112366127B (en) 2020-10-09 2020-10-09 Atmospheric pressure low-temperature plasma jet processing method with solid mask focusing and application

Publications (2)

Publication Number Publication Date
CN112366127A CN112366127A (en) 2021-02-12
CN112366127B true CN112366127B (en) 2021-07-23

Family

ID=74507295

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011071633.3A Active CN112366127B (en) 2020-10-09 2020-10-09 Atmospheric pressure low-temperature plasma jet processing method with solid mask focusing and application

Country Status (1)

Country Link
CN (1) CN112366127B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013184000A1 (en) * 2012-06-06 2013-12-12 Stichting Materials Innovation Institute (M2I) Plasma jet etching device and method for removing an encapsulation portion of a sample via plasma jet etching
CN103945630A (en) * 2014-04-21 2014-07-23 上海交通大学 Barometric pressure air micro-plasma jet device for etching thin polymer film without mask
CN104979155A (en) * 2015-06-16 2015-10-14 上海交通大学 Six-DOF (Degree of Freedom) microplasma jet machining platform system
CN106455281A (en) * 2016-10-13 2017-02-22 上海交通大学 Atmospheric pressure plasma jet device of integrated mask plate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080018841A1 (en) * 2006-07-24 2008-01-24 Samsung Electronics Co., Ltd. Methods and apparatus for forming LCD alignment films

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013184000A1 (en) * 2012-06-06 2013-12-12 Stichting Materials Innovation Institute (M2I) Plasma jet etching device and method for removing an encapsulation portion of a sample via plasma jet etching
CN103945630A (en) * 2014-04-21 2014-07-23 上海交通大学 Barometric pressure air micro-plasma jet device for etching thin polymer film without mask
CN104979155A (en) * 2015-06-16 2015-10-14 上海交通大学 Six-DOF (Degree of Freedom) microplasma jet machining platform system
CN106455281A (en) * 2016-10-13 2017-02-22 上海交通大学 Atmospheric pressure plasma jet device of integrated mask plate

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Low temperature atmospheric microplasma jet array for uniform treatment of polymer surface for flexible electronics;Tao Wang，et al;《J. Micromech. Microeng.》;20171231;全文 *
Selective removal of parylene-C film by ultrafine Ar/O2 atmospheric pressure plasma jet;Guo Honglei,et al;《强激光与粒子束》;20150228;第27卷(第2期);全文 *
Separated Type Atmospheric Pressure Plasma Microjets Array for Maskless Microscale Etching;Yichuan Dai,et al;《Micromachines》;20171231;全文 *
大气压微细冷等离子体射流特性及其无掩膜刻蚀研究;李冉;《中国优秀硕士学位论文全文数据库》;20130915;全文 *

Also Published As

Publication number Publication date
CN112366127A (en) 2021-02-12

Similar Documents

Publication Publication Date Title
JP4845936B2 (en) Liquid phase etching equipment
Toyoda et al. Gas cluster ion beam equipment and applications for surface processing
EP1843972B1 (en) Patterning by energetically-stimulated local removal of solid-condensed-gas layers and solid state chemical reactions produced with such layers
US20050221584A1 (en) Wafer processing method
DE60039293D1 (en) REACTIVIONAL BEAM METHOD AND THIN FILM HEAD MADE ACCORDING TO THIS METHOD
JP4541150B2 (en) Method for manufacturing separable substrate
JP2005310757A (en) Device and method for manufacturing three-dimensional fine structure
JPH04135079A (en) Working method by ion beams and its device
US7192848B2 (en) Method for manufacturing mesa semiconductor device
CN112366127B (en) Atmospheric pressure low-temperature plasma jet processing method with solid mask focusing and application
Liu et al. Large-area micro/nanostructures fabrication in quartz by laser interference lithography and dry etching
Varghese et al. Non-contact removal of 60-nm latex particles from silicon wafers with laser-induced plasma
JP2016130733A5 (en)
van Borkulo et al. A more than moore enabling wafer dicing technology
JPH05190517A (en) Microscopic pattern forming method
JP2009132945A (en) Method for forming film-formed body by aerosol deposition process
JPH08318378A (en) Method for joining minute object
CN112456433A (en) Ice-carving-based solution-free electron beam exposure micro-nano processing method and device
CN111422822A (en) Preparation process of nano forest getter
Zou et al. A Hydrophobic Structures Manufacturing Method Based on Laser-assisted Electrochemical Deposition
JP3945561B2 (en) Method for producing extraction electrode
JPH11221829A (en) Substrate for forming thin coat and manufacture of microstructure
KR20180111248A (en) Patterning method of vacuum kinetic spray process
JP4783900B2 (en) Method of forming film on substrate and device manufacturing method
JP3426062B2 (en) Film formation method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant