JP3639850B2 - Electron beam excited plasma sputtering system - Google Patents

Description

[0001]
[Industrial application fields]
  In the disclosed technology, a predetermined target is irradiated with ions from ion plasma generated via an electron beam to excite sputtering particles, and a film of a metal alloy, oxide, nitride, or the like is formed on a predetermined substrate.EquipmentIt belongs to the technical field.
[0002]
[Prior art]
  As is well known, the prosperity of the industrial society is strongly backed up by highly developed science, especially electronics, and therefore further development of the theory and technology of such electronics is strongly demanded. .
[0003]
  And the development of science and technology by such electronic engineering has exposed the fine forming technology of submicron unit beyond the micron unit to the industrial society. As a so-called sputtering processing technology, glass plate, metal plate, plastic film, metal film. In order to adapt to the field of architectural windows, etc., which are recently required to increase the area, film coating technology for large areas of glass substrates and various films has been developed. It has become practical, and it can be used for applications such as transparent electrodes for display of liquid crystal display elements as electronic devices, electrodes for solar cells, heat ray reflective glass, electromagnetic shielding glass, low radiation glass, etc. Oxide, gold, doped with tin, indium oxide, fluorine or antimony, Aluminum, metal such as silicon, or oxides thereof, nitrides have become applicable as film forming.
[0004]
  Thus, the coating of the sputtering film is basically performed by extracting a predetermined ion from the plasma formed in the ion generation chamber and irradiating the target, and then deriving the sputtering particles from the target to coat the substrate. In the conventional sputtering means as shown in FIG. 9, the plasma generating gas 7 is supplied while the DC power source is supplied. 1 applies high voltage to the cathode 2 and cools the target 4 with cooling water 3, forms plasma with the substrate 6 supported by the anode 5 provided parallel to the target 4, and opens and closes the shutter 8. As a result, a mode in which the sputtered particles are coated on the substrate 6 or a high-frequency sputter as shown in FIG. For example, a high frequency voltage of, for example, 13.56 MHz is applied to the target 4 via the electric instrument 9 by the high frequency power source 1 ′ and further via the cathode 2, and the plasma generating gas 7 is supplied. In this embodiment, plasma is generated between the target 4 and the wall surface, ions in the plasma are irradiated to the target 4 through the rotation of the shutter 8, and the sputtering particles are coated on the substrate 6 supported by the anode 5. It was taken.
[0005]
  However, the DC voltage application type sputtering mode as shown in FIG. 9 and the high frequency voltage application type sputtering method as shown in FIG. 10 have the disadvantage that the deposition rate of the film formation is slow and the working efficiency is poor. It was.
[0006]
  Further, since the sputtering means of this conventional mode has few controllable parameters, the flux of ions flowing into the target 4, the energy, and the gas pressure of the plasma generation conditions cannot be controlled independently of each other. There is a drawback that the number and energy of ions radiated in an assisting manner to 6 cannot be controlled independently.
[0007]
  In addition, the mutual positional relationship between the target 4 and the substrate 6 cannot be controlled independently of plasma generation or the like.
[0008]
  In order to cope with this, as shown in FIGS. 11, 12, and 13, a magnet 10 is disposed around the target 4 in order to improve the deposition rate, and the magnetron method is adopted as shown in FIG. A ring magnetron sputtering method, a planar magnetron sputtering method as shown in FIG. 12, a coaxial magnetron sputtering method as shown in FIG. 13, and the like are also employed.
[0009]
  Thus, for example, Japanese Patent Laid-Open Nos. 3-183763, 2-301562, and 5-171435 have been developed for such systems.
[0010]
  Needless to say, in the sputtering method using the seed magnetron method, the flux, energy, plasma generation conditions, and the like of ions sucked into the target 4 are controlled independently of each other as in the conventional mode shown in FIGS. However, since the magnet 10 is constrainedly disposed on the target, it is still difficult to stabilize the mutual positional relationship independently of plasma generation.
[0011]
  Further, in such a magnetron type sputtering means, since the magnetic field distribution on the surface of the target 4 becomes non-uniform, it is often sputtered locally, and as a result, the utilization efficiency is lowered. there were.
[0012]
  Further, in this state, since the magnetic field distribution on the surface of the target 4 is not uniform, there is a difficulty that sputtering for forming a magnetic material with a sputtering coating is difficult.
[0013]
  Thus, for example, a microwave 12 such as 2.45 GHz is introduced into a rectangular waveguide 11 as shown in FIG. 14 through a quartz window 13 to form a predetermined plasma in the plasma chamber 14. There is also an ECR sputtering means for deriving the plasma 15 through the window from the chamber 14 and coating the substrate 6 with a predetermined film by the plasma 15 derived by connecting the target 4 ′ to the sputtering power source 1 ″ during that time. It has been developed and disclosed, for example, in Japanese Patent Application Laid-Open No. 59-47728.
[0014]
  However, this kind of ECR sputtering method has the disadvantage that it is difficult to form a magnetic material because there is a magnetic field at the substrate position as in the above-described magnetron method, and the axis of the plasma 15 is used to extract plasma. The distribution of space potential in the direction causes ions in the plasma 15 to be accelerated in the axial and radial directions by the potential difference, and the energy of the ions colliding with the substrate 6 such as a wafer becomes ten to several tens eV, The film-forming coating has the disadvantage that the energy is too large.
[0015]
  [Background of the invention]
  By the way, as is well known, the prosperity of the industrial society is strongly backed up by highly developed science, especially electronics, and therefore further development of the theory and technology of such electronics is strongly demanded. ing.
[0016]
  Therefore, in the electronic engineering, it is more strongly demanded that more precise and accurate processing of information such as data in each field is performed at an ultra-high speed. There is an increasing demand for high-tech and down-sizing devices that perform precise and accurate ultra-high-speed arithmetic processing. For this reason, more precise dry etching technology for silicon wafers and other highly integrated circuits such as ICs and LSIs is required. In order to cope with this, for example, as disclosed in Japanese Patent Application Laid-Open No. 63-138634, ion irradiation technology has been developed, so-called DC discharge plasma, RF discharge plasma, ECR (electron cyclotron resonance). A plasma is generated by a discharge plasma or an electron beam, and ions of the plasma are applied to a sample such as a silicon wafer. Irradiating through the electric field generated on the surface (EBEP) system has come to be put to practical use have been developed.
[0017]
  However, in order to effectively perform dry etching with good ions without leaving large damage to the large-diameter sample such as a silicon wafer, ions having a uniform large current density over a large cross-sectional area in a low energy region. It has been found that it is necessary to irradiate the target and that it must be carried out under basically conflicting conditions.
[0018]
  However, the old ion irradiation apparatus has a problem that, when the current density of ions is increased in low energy ions, it is impossible to cope with irradiation of the sample uniformly over the entire large area.
[0019]
  In order to cope with this, for example, as disclosed in Japanese Patent Application No. 3-274960, a so-called electron beam excited plasma technology (EBEP) capable of generating a high-density plasma capable of obtaining a large ion current density has been developed. The beam-excited ion irradiation apparatus has been designed to be put to practical use as seen in, for example, Japanese Patent Application Laid-Open Nos. 57-203781 and 63-190229, and is equipped with ECR (Electron Cyclotron Resonance) ) Development has been made industrially with advantages different from the discharge plasma method.
[0020]
[Problems to be solved by the invention]
  The object of the invention of this application is to solve the problem of film formation on a substrate by sputtering based on the magnetron method or the like based on the above-mentioned prior art, and the ion plasma generation region of the EBEP technology described in the background of the above-mentioned invention Electron Beam Gun of Electron Beam Excited Ion Plasma Generating Technology with Excellent Advantages such as No Difference in Plasma Potential in Axial Direction and Radial Direction and Plasma Shape Can Change Reverse Magnetic Field Coil Current Excellent electron beam excited plasma sputtering that benefits the field of application of film formation technology in the electronics industry by taking advantage ofapparatusIs intended to provide.
[0021]
[Means for Solving the Problems]
  The object described above is achieved by the present invention described in the following (1) to (7).
[0022]
  (1) an electron beam gun for generating electron beam excited plasma;
  A reaction chamber in which at least one target and the substrate are arranged to face each other;
  A target holder configured to change the relative position of the target and the substrate, and holding the target;
  A substrate holder for holding the substrate;
  A relative position changing device for changing the position of the substrate so that the relative position of the substrate and the target changes while facing each other;
  A reversed magnetic field coil for changing the shape of the plasma at the target position generated by the electron beam gun,
  The position of the substrate and the position of the target can be arbitrarily set independently of plasma generation conditions.
[0023]
  (2) The target is a plurality, and has a target holder for holding the plurality of targets individually,
  The electron beam excitation according to (1), wherein the target holder is configured to be able to independently and independently change a relative position between the substrate and each of the plurality of targets. Plasma sputtering equipment.
[0024]
  (3) The electron beam excited plasma sputtering apparatus according to (1) or (2), wherein the substrate holder is configured to be rotatable.
[0025]
  (4) When the target is conductive, a negative voltage is applied to the plasma by a DC power source. When the target is an insulator, a self-bias voltage is generated on the target surface by an RF power source. In this method, ions are drawn from the plasma to generate sputtered particles, and a part of the sputtered particles is ionized in the plasma to be deposited on the substrate, thereby generating a film on the substrate. The electron beam excited plasma sputtering apparatus according to any one of (1) to (3) above.
[0026]
  (5) The electron beam excited plasma sputtering apparatus according to any one of (1) to (4), wherein the target is formed in a cylindrical shape and the inner wall side is formed in a tapered shape.
[0027]
  (6) The target is formed in a cylindrical shape,
  The electron beam-excited plasma sputtering apparatus according to any one of (1) to (4), wherein the cylindrical target is covered with a covering member except for a plasma passing portion.
[0028]
  (7) The plurality of targets are each formed in a cylindrical shape, have different inner diameters, and a target closer to the substrate has a larger inner diameter. Electron beam excited plasma sputtering equipment.
[0029]
  That is,In order to solve the above-mentioned problems, the structure of the invention of the present application, which is summarized in the scope of the above-mentioned claims along the above-mentioned purpose, irradiates the target with ions from the plasma, and sputters particles from the target to the target. Electrons emitted from an electron beam gun provided in advance in the plasma generation region when the substrate is irradiated with other assistant ions and the substrate is coated with predetermined sputtering particles. The beam is led into the reaction chamber to form plasma, and the shape of the plasma is changed to a predetermined shape by changing the current of the reverse magnetic field coil provided outside the reaction chamber, and the target and the substrate are opposed to each other. These positional relationships can be set independently of the plasma generation conditions, and the flow rate of ions introduced into each of them can be set. In the case where the target is conductive, a negative voltage is applied to the plasma by the DC power source, and in the case where the target is insulative, the RF and energy can be controlled independently of each other. A bias voltage is generated on the target surface by a power source, ions are introduced from the plasma, and sputtered particles are generated. The generated sputtered particles are partially ionized in the plasma and deposited on the substrate, and the energy of the ions is the substrate. Can be set by the difference between the set surface potential and the plasma potential by the voltage applied from the bias DC or RF power source, and the target is multi-source sputtering in a plurality of stages set in the axial direction. In the case of multi-component sputtering with multiple axial divisions, when a multi-component material is deposited, the multi-target However, in this case, a plurality of targets are installed as described above, and the energy of ions to be introduced is changed by changing the voltage applied to each target. The amount of sputtering can be changed to produce a film having a composition as designed, and the amount of ion flux can be changed by changing the distance between the plasma and the target to a predetermined value. However, when the substrate and the target face each other, it may be difficult to generate plasma uniformly on the substrate. In this case, a cylindrical target installed near the reaction chamber of the acceleration electrode of the electron beam gun is used. A hole is formed so that a high-concentration plasma is generated by passing an electron beam inside the cylindrical target. Sputtered particles that are scattered by the voltage applied to the substrate are immediately ionized by the plasma, and the film is coated with good uniformity on the substrate side facing the acceleration electrode of the electron beam gun. Technical measures were taken so that the coating was formed.
[0030]
【Example】
  Next, an embodiment of the invention of this application will be described with reference to FIGS.
[0031]
  In addition, the same aspect part as FIG. 9 and the following shall be demonstrated using the same code | symbol.
[0032]
  Moreover, the same code | symbol shall attach | subject the same code | symbol throughout all the embodiments.
[0033]
  In the embodiment shown in FIG.Sign16 is a reaction chamberIndicates. Reaction chamber 16The chamber 17 has a cylindrical shape.Yes.A port 18 for supplying argon gas for plasma formation or other reactive gas 19 is formed in the front end portion.ing. Port 18 facesOn the opposite side, an exhaust port 18 'for discharging the gas 19 is opened.,It is connected to an exhaust pump (not shown).
[0034]
  Also, on the side near the centerMagnetismA field coil 20 is provided in an annular manner so that the shape of the plasma 38 can be changed by a current change flowing therethrough.
[0035]
  In the plasma 38,,A black circle-shaped electron 39 and a cross-hatched round ion are schematically shown side by side.
[0036]
  As shown in FIG.In the example,A holder in which the target 21 has an outer pipe 22 and an inner pipe 22 ′ having a flow path for the cooling water 3 near the base end in a posture parallel to the axial direction.(Target holder)So that the radial installation position can be changed appropriately.Yes.The outer pipe 22 of the holder is connected to a high-frequency power source 23 as a sputtering power source, and a self-bias voltage is applied to the surface of the target 21 to attract ions 40 from the plasma 38 and generate sputtered particles. .
[0037]
  The substrate 6 is held by the anode 5 in a predetermined state facing the target 21 in an axially parallel state. The substrate 6 held by the anode (substrate holder) 5 isOpposite to target 21As it isThe relative position and posture can be changed by the relative position change device 24.Has been. AndAn RF power source 25 for bias is connected to the anode 5.AndA set difference between the potential applied to the surface and the plasma potential can be freely applied to the ion energy.
[0038]
  In front of the reaction chamber 16,When used in the electron beam excited ion plasma generator (EBEP) in communication with the reaction chamber, substantially the same electron beam gun 26 is provided in communication.Yes.At the base of the discharge region 27 forming the first half of the chamber 17,A heating cathode 28 is provided.ing. further,Beside the heating cathode 28,Port 29 for supplying argon gas 30 for plasma discharge is openIt is. AndOn the downstream side of the heating cathode 28,Concentrically,An auxiliary electrode 31 and a discharge electrode 32 are provided.TheConnected to power supply 33ing. further,Close to the reaction chamber 16,Acceleration electrode 34 is provided,An acceleration power source 35 is connected.
[0039]
  In addition, between the discharge electrode 32 and the acceleration electrode 34,,Exhaust port 29 'is providedAndIt is connected to a predetermined pump device so that exhaust 30 'can be performed.
[0040]
  In addition,1 in FIG.Reference numeral 36 denotes an acceleration region of the electron beam gun 26.
[0041]
  Further, outside the discharge electrode 32 and the acceleration electrode 34,,Electromagnetic coils 37 and 37 'for controlling the convergence state of the electron beam 39 emitted concentrically from these electrodes are provided.,It is concentrically arranged.
[0042]
  In the above configuration, the substrate 6 is coated with a predetermined alloy film.HitThe predetermined argon gas 30, 19 is supplied to the ports 29, 18, and the predetermined pressure is maintained to exhaust from the exhaust ports 29 ', 18'.To do. AndWhen the heating cathode 28 of the electron beam gun 26 is heated to a predetermined temperature, the argon gas 30 supplied in the discharge region 27 is discharged and plasma is discharged.ButThe electrons 39 in the plasma are extracted from the auxiliary electrode 31 and the discharge electrode 32.The AndAccelerated by the acceleration electrode 34 and driven into the reaction chamber 16 as an electron beam.,It collides with the supplied argon gas 19 to form plasma 38, and ions 40 are excited.
[0043]
  The formed plasma 38 is,By changing the current value by the reversed magnetic field coil 20, it can be changed to a desired shape.It has become so.The target 21 and the substrate 6 areIndependently, the outer pipe 22 andThe relative position change device 24 changes the mutual position.It can be done.Therefore, since the shape change of the plasma 38 and the relative position and orientation of the target 21 and the substrate 6 can be set independently of each other, the flux of ions jumping into each target 21 and the substrate 6 can be controlled independently. Further, the energy of the ions is generated by changing the bias voltage to the surface of the target 21 by the RF power source 23, and is controlled by the difference from the plasma potential, and the ions 40 are drawn from the plasma 38 to generate sputtered particles. A part is further ionized, and a coating is deposited on the substrate 6 as a film.
[0044]
  The substrate holder 5 on which the substrate 6 is installed is,By rotating, the uniformity of film formation can be improved.
[0045]
  In addition, the energy of assist ions irradiating the substrate is,The surface potential set by the bias RF power source 25 applied to the substrate 6 and the potential difference between the plasma 38 can be set to a predetermined value.
[0046]
  in this way,There is no potential difference between the axial direction and the radial direction of the plasma 38 formed by the reaction chamber 16 by the beam-like electrons 39 formed by the electron beam gun 26, and the current density and the energy of the ions irradiating the target and the substrate are mutually related. Combined with being controlled independently, the substrate for the predetermined metal composition film formation on the substrate 6 in the reaction chamber 16 can be made to conform to the structure.
[0047]
  In addition, by appropriately setting the current values of the electron beam focusing coils 37 and 37 ′ and the reverse magnetic field coil 20, a wide space including the substrate in the reaction chamber and the periphery of the target can be brought into a state of no magnetic field. As a result, local sputtering due to non-uniform magnetic field distribution can be avoided.
[0048]
  Next, the embodiment shown in FIG.Will be described.
  In the embodiment shown in FIG.Target 21 'ButMultipleIt is. And in this example,An inner pipe 22 'is provided, and each of the cooling waters can be made conductive and connected to the sputtering power source 23 to change the applied voltage applied to a plurality of types of targets 21', 21 ', 21' to form a desired film. To be able to coatIt is.It is possible to change the flux of ions 40 by changing the energy of ions to be drawn by changing the voltage applied to each target 21 ′ and also changing the mutual distance between the plasma 38 and each target 21 ′. So that the desired alloy composition can be formed.It has become.
[0049]
  Next, the embodiment shown in FIG.Will be described.
  In the embodiment shown in FIG.Target 21 ″,Accelerating electrode from chamber 17 of electron beam gun 2634Close to the sideIt is. AlsoThe multi-pole magnet 26 is disposed on the inner side of the chamber 17 of the reaction chamber 16.´RingIt is.In the cylindrical target 21 ″,As shown in FIG. 4, a lead-out hole 21 ″ ″ for the electron beam 39 ′ is formed at a predetermined center.
[0050]
  In this example,By connecting an RF power source 23 ″ to the target 21 ″ and applying a high frequency voltage to the target 21 ″,Sputtered particle groups are scattered. AndThe sputtered particle group spattered,Part is ionized by plasma 38,Reverse field coil 20 and multipole magnet 26´Controlled byIt has become so. AndThe film is formed on the wafer substrate 6 ′ facing the acceleration electrode 34 with good uniformity.The Rukoto.
[0051]
  In this embodiment, the filament 28 'is connected to the heating power source 33' in the hot cathode 28 of the electron beam gun 26, andsubstrateThe RF power source 25 'for bias is connected to the holder 27 of (wafer) 6', but there is no particular meaning.
[0052]
  In addition, the multipole magnet 26´Is,It can also be installed outside the chamber 17The Also,The reversed field coil 20,It is also possible to install a double coil outside the electron beam converging coil 37 '.
[0053]
  Also,As shown in FIG.In addition,Cylindrical targets 21 ″, 21 ″ are axially orientedInA mode in which a predetermined number (multiple stages) is provided and multi-source sputtering can be adopted as a design change example.TheEach target 21 ″Derivation hallAbout (electron beam passage hole) 21 "",Reverse field coil 20, multipole magnet 26´As the electron beam diffuses and passes, the taper shape can be formed as shown in FIG.
[0054]
  Of course, the embodiments of the invention of this application are not limited to the above-described embodiments.TheFor example, for multi-source sputteringAs shown in FIG.Targets obtained by dividing a predetermined number of targets 211 ′, 211 ″, 211 ″ ″ in the circumferential direction through the diaphragms 41, 41, 41 in the circumferential direction.211Using,It is also possible to connect to a bias power source 25 ″.
[0055]
  In addition, as shown in FIG. 8, when there is a possibility that the influence of sputtering may occur mutually in the aspect of multi-source sputtering shown in FIG. 5, an electron beam passage hole 21 '' '' is formed in each target 21 ''. Various modes such as covering the cover-like portion 42 with the disk-like portion to be removed and dropping it to the ground to cope with this can be adopted.
[0056]
  Thus, by covering each target 21 ″ with the cover ring 42, only the plasma side is opened and the mutual influence of sputtering can be avoided.
[0057]
  Of course, the bias power source may be not only RF but also DC.
[0058]
  Furthermore, by using a reactive gas as the gas introduced into the reaction chamber in the above-described embodiment, it becomes possible to form an oxide or nitride film.
[0059]
  For example, the target is Al and the reactive gas is O.₂If Al₂O_ThreeThe reactive gas is N₂Then, AlN can be formed.
[0060]
  Also, the target is Si and the reactive gas is O₂If Si_xO_1-x(X = 0 to 1) can be formed.
[0061]
【The invention's effect】
  As described above, according to the invention of this application, basically, a reaction chamber in which a substrate is attached to a target is irradiated with an electron beam, and ions formed in the plasma are drawn to form a film on the substrate. In the sputter deposition method, ions are generated in the plasma, and are accelerated and emitted from an electron beam gun used in an electron beam excited ion generator that has been developed to the extent that it can be used industrially based on various studies so far. By using the generated electron beam, there is no potential difference in the axial and radial directions in the reaction chamber of the ion plasma formation region, and therefore the formed plasma is only changed by the reversed field coil current and the multipole magnet. To control the flux, energy, and plasma generation conditions (gas pressure, etc.) of ions flowing into the target independently of each other The ability, coating deposition on the substrate is achieved an excellent effect that allows as designed.
[0062]
  In addition, since the positional relationship between the target and the substrate and the plasma can be set independently of the plasma generation conditions and the like, the effect of being able to coat a synthetic metal film on the substrate with a desired tissue is also achieved. The
[0063]
  Further, since the surface magnetic field distribution on the target is uniform, sputtering is performed on the entire surface, and the operation efficiency is improved.
[0064]
  In addition, since it is easy to make the magnetic field around the substrate non-magnetic, it is possible to perform sputtering deposition of a magnetic material.
[Brief description of the drawings]
FIG. 1 is a schematic longitudinal sectional view of one embodiment of the invention of this application.
FIG. 2 is a schematic longitudinal sectional view of another embodiment.
FIG. 3 is a schematic cross-sectional view of another embodiment.
4 is a schematic perspective view of the target shown in FIG. 3; FIG.
FIG. 5 is a schematic side view of a target for multi-source sputtering.
FIG. 6 is a schematic longitudinal sectional view of one unit of a multi-source sputtering target.
FIG. 7 is a schematic perspective view of a target for multi-source sputtering.
FIG. 8 is a schematic longitudinal sectional view of another target of multi-source sputtering.
FIG. 9 is a schematic longitudinal sectional view of a bipolar DC sputtering method.
FIG. 10 is a schematic longitudinal sectional view of a high-frequency sputtering method based on the prior art.
FIG. 11 is a schematic longitudinal sectional view of magnetron type sputtering means.
FIG. 12 is a schematic longitudinal sectional view of a magnetron type sputtering means.
FIG. 13 is a schematic longitudinal sectional view of a magnetron type sputtering means.
FIG. 14 is a schematic schematic longitudinal sectional view of an ECR sputtering means.
[Explanation of symbols]
5 Anode (substrate holder)
  6 Substrate
6 'substrate
  16 reaction chamber
17 chamber
18 ports
18 'exhaust port
  19 Reaction gas
20 Reverse field coil
  21 Target
21 'target
21 ″ target (cylindrical target)
21 ″ ″ Derivation hole (electron beam passage hole)
22 Outer pipe
22 'inner pipe
  23 Power supply for bias
23 ″ RF power supply
24 Relative position change device
  25 Bias power supply
26 Electron beam gun
26 'multipole magnet
27 Discharge area
28 Heating cathode
31 Auxiliary electrode
32 Discharge electrode
33 Power supply
29 ports
29 'exhaust port
30 Argon gas
30 'exhaust
32 Discharge electrode
34 Accelerating electrode
35 Acceleration power supply
36 Acceleration region of electron beam gun
  37, 37 'electromagnetic coil
  38 Plasma
  39 Electron beam
  40 ions
41 Diaphragm
42 Covering
211 target
211 'target
211 ″ target
211 "" target

Claims (7)

An electron beam gun for generating an electron beam excited plasma;
A reaction chamber in which at least one target and the substrate are arranged to face each other;
A target holder configured to change the relative position of the target and the substrate, and holding the target;
A substrate holder for holding the substrate;
A relative position change device for changing the position of the substrate so that the relative position of the substrate and the target changes while facing each other;
A reversed magnetic field coil for changing the shape of the plasma at the target position generated by the electron beam gun,
The position of the substrate and the position of the target can be arbitrarily set independently of the plasma generation conditions. The target is plural, and has a target holder for holding the plural targets individually,
The electron beam excited plasma according to claim 1, wherein the target holder is configured to be able to independently and independently change a relative position between the substrate and each of the plurality of targets. Sputtering equipment. The electron beam excited plasma sputtering apparatus according to claim 1, wherein the substrate holder is configured to be rotatable. When the target is conductive, a negative voltage is applied to the plasma by a DC power source. When the target is an insulator, a self-bias voltage is generated on the target surface by an RF power source to generate the plasma. An ion is attracted from the substrate to generate sputtered particles, and a part of the sputtered particles is ionized in the plasma to be deposited on the substrate, thereby generating a film on the substrate. Item 4. The electron beam excited plasma sputtering apparatus according to any one of Items 1 to 3. 5. The electron beam excited plasma sputtering apparatus according to claim 1, wherein the target is formed in a cylindrical shape, and the inner wall side is formed in a tapered shape. The target is formed in a cylindrical shape,
The electron beam-excited plasma sputtering apparatus according to any one of claims 1 to 4, wherein the cylindrical target is covered with a covering member except for a plasma passing portion. 3. The electron beam excited plasma according to claim 2, wherein each of the plurality of targets is formed in a cylindrical shape and has a different inner diameter, and a target closer to the substrate has a larger inner diameter. Sputtering equipment.

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