JPH09204657A - Polishing composition and method for polishing magnetic disc substrate - Google Patents
Polishing composition and method for polishing magnetic disc substrateInfo
- Publication number
- JPH09204657A JPH09204657A JP3417796A JP3417796A JPH09204657A JP H09204657 A JPH09204657 A JP H09204657A JP 3417796 A JP3417796 A JP 3417796A JP 3417796 A JP3417796 A JP 3417796A JP H09204657 A JPH09204657 A JP H09204657A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing composition
- magnetic disk
- particles
- colloidal silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、コンピュータ等の
記憶装置に使用される磁気ディスク基板、特にNiPメ
ッキしたアルミディスク基板を高鏡面に研磨することが
でき、高密度な磁気ディスク基板を製造するのに適した
研磨用組成物及び磁気ディスク基板の研磨方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention makes it possible to polish a magnetic disk substrate used in a storage device such as a computer, especially an NiP-plated aluminum disk substrate to a high mirror surface, and to manufacture a high density magnetic disk substrate. And a method for polishing a magnetic disk substrate.
【0002】[0002]
【従来の技術】従来、磁気ディスク基板、特にアルミデ
ィスク基板の研磨は、アルミナ微粒子に各種の研磨促進
剤を添加した研磨スラリーを使用する方法が一般的に採
られている。磁気ディスクの記憶密度の向上と共にアル
ミナ微粒子、研磨促進剤の改良が行われ、研磨面精度も
向上してきた。しかし、この方法によって達成される研
磨表面粗さは、Raで10Å程度である。最近に至り、
3.5インチ磁気ディスクで1ギガバイト以上の高密度
磁気ディスクに対応し得る基板が求められている。この
要求を達成するためには、研磨表面の平均面粗さRaが
10Å以下、望ましくは7Å以下であって、しかも従来
問題にならなかった微小の研磨痕やマイクロピット等の
表面欠陥を極少レベルにする必要がある。このような要
求に対し、前記のアルミナ微粒子をベースにした研磨ス
ラリーで研磨する従来法では前記の必要条件を満足し得
ない。2. Description of the Related Art Conventionally, for polishing a magnetic disk substrate, particularly an aluminum disk substrate, a method of using a polishing slurry prepared by adding various polishing accelerators to alumina fine particles is generally adopted. Along with the improvement of the storage density of the magnetic disk, the alumina fine particles and the polishing accelerator have been improved, and the polishing surface accuracy has also been improved. However, the polishing surface roughness achieved by this method is about 10Å in Ra. Recently,
There is a demand for a substrate capable of supporting a high density magnetic disk of 1 gigabyte or more with a 3.5 inch magnetic disk. In order to achieve this requirement, the average surface roughness Ra of the polished surface is 10 Å or less, preferably 7 Å or less, and the surface defects such as minute polishing marks and micropits which have not been a problem in the past are minimized. Need to In order to meet such requirements, the above-mentioned required conditions cannot be satisfied by the conventional method of polishing with the above-mentioned polishing slurry based on alumina fine particles.
【0003】最近公開された特開平7−240025号
公報には、コロイダルシリカに化学的腐食剤を添加した
スラリーを使った研磨方法が提案されている。この方法
に基づいて磁気ディスク基板を研磨すると、表面粗さR
aは前記の必要条件を満足する。[0003] Recently published Japanese Patent Application Laid-Open No. 7-240025 proposes a polishing method using a slurry in which a chemical corrosive agent is added to colloidal silica. When the magnetic disk substrate is polished based on this method, the surface roughness R
a satisfies the above requirement.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、本発明
者らが前記特開平7−240025号公報の方法を試行
したところ、研磨後にリンス(洗浄)を行った際、研磨
機に残った研磨液のpHが中性域になるにつれ、ゲル化
が急速に発生することが見出された。このようなゲル化
の発生は研磨パッドの目詰りを生じさせ、その結果、研
磨操作の継続が困難となるため、実用的方法とは言えな
い。高密度磁気ディスク基板の研磨方法は現在上記の状
況にあり、工業的に採用し得る方法は見つかっていな
い。そのため、高密度磁気ディスク基板に要求される前
記研磨表面アラサの必要条件を満足させる研磨方法の開
発が求められている。However, when the inventors of the present invention tried the method of the above-mentioned Japanese Patent Laid-Open No. 7-240025, when the rinse (cleaning) was performed after polishing, the polishing liquid remaining in the polishing machine was removed. It was found that gelation occurred rapidly as the pH went into the neutral range. The occurrence of such gelation causes clogging of the polishing pad, and as a result, it becomes difficult to continue the polishing operation, which is not a practical method. The polishing method for the high-density magnetic disk substrate is currently in the above-mentioned situation, and no method that can be industrially adopted has been found. Therefore, there is a demand for development of a polishing method that satisfies the requirements for the polished surface roughness required for a high-density magnetic disk substrate.
【0005】[0005]
【課題を解決するための手段】かかる状況下に鑑み、本
発明者らは、前記特開平7−240025号公報の方法
においてはゲル化の発生が継続的な研磨操作を困難にさ
せている点を見出し、ゲル化発生防止を重点に検討を行
い、工業的に採用可能であって、高密度磁気ディスク基
板に要求される研磨表面粗さRa10Å以下で、微小の
研磨痕やマイクロピット等の表面欠陥を極少レベルにす
ることができる研磨用組成物及び研磨方法を検討した。
本発明者らは、上記の目的を達成すべく鋭意努力し、検
討した結果、水、コロイド粒子、硝酸アルミニウムから
なる研磨スラリーに、ホスホン酸、フェナントロリン、
アセチルアセトンアルミニウム塩の一種若しくは二種以
上の混合物であるゲル化防止剤を含有させてなることを
特徴とする研磨用組成物を見出した。In view of such circumstances, the present inventors have found that gelation in the method disclosed in Japanese Patent Laid-Open No. 7-240025 makes continuous polishing operation difficult. The present inventors have found that the surface roughness such as micro pits and micro pits, which is industrially applicable and has a polishing surface roughness Ra of 10 Å or less, which is required for a high-density magnetic disk substrate, has been studied. The polishing composition and polishing method capable of minimizing the number of defects were investigated.
The inventors of the present invention have made diligent efforts to achieve the above-mentioned object, and as a result, studied, a polishing slurry composed of water, colloidal particles and aluminum nitrate was treated with phosphonic acid, phenanthroline,
The present inventors have found a polishing composition containing an anti-gelling agent which is one or a mixture of two or more acetylacetone aluminum salts.
【0006】[0006]
【発明の実施の形態】本発明に用いるコロイド粒子は、
通常は負に帯電した無定形シリカ粒子が水中に分散して
コロイド状をなしているもの(コロイダルシリカ)をい
い、さらにはアルミナ水和物のコロイド状粒子、セリア
水和物のコロイド状粒子を使用しても良い。上記コロイ
ダルシリカとしては平均粒子径が5〜120nmが好ま
しい。平均粒子径が5nm未満では加工レートが著しく
低く、また120nmより大きい粒子は工業的に安定に
製造することが難しいという傾向があるからである。ま
た粒度分布は、分布曲線のピーク部分がシャープで粒子
径が揃っているよりも、分布曲線のピーク部分がブロー
ドで幅の広いもの、若しくは細かい粒子と粗い粒子との
二山のピークを持つ分布の方が加工レートは高い。ま
た、コロイダルシリカの研磨スラリーへの添加量は、1
〜40重量%が望ましい。添加量が1重量%未満では研
磨レートが著しく低く、また40重量%を越えても研磨
レートの向上が見られないだけでなく、ゲル化し易くな
る傾向があるからである。The colloidal particles used in the present invention are
Usually, negatively charged amorphous silica particles are dispersed in water to form a colloidal form (colloidal silica). Further, colloidal particles of alumina hydrate and ceria hydrate are referred to as colloidal particles. You may use it. The colloidal silica preferably has an average particle size of 5 to 120 nm. This is because if the average particle size is less than 5 nm, the processing rate is remarkably low, and particles larger than 120 nm tend to be difficult to industrially and stably manufacture. In addition, the particle size distribution is such that the peak part of the distribution curve is broad and wide, or the peak part of the distribution curve has two peaks of fine particles and coarse particles, rather than the peak parts of the distribution curve are sharp and the particle diameters are uniform. Has a higher processing rate. The amount of colloidal silica added to the polishing slurry is 1
-40% by weight is desirable. This is because if the addition amount is less than 1% by weight, the polishing rate is remarkably low, and if it exceeds 40% by weight, not only the polishing rate is not improved but also gelation tends to occur.
【0007】本発明に用いる硝酸アルミニウム(Al
(NO3 )3 ・9H2 O)は、研磨促進剤としての働き
があり、添加量は0.1〜20重量%が望ましく、最も
好ましい添加量は1〜20重量%である。添加量が0.
1重量%未満ではその機能が充分に果たされず、20重
量%を越えるとよりゲル化し易くなる傾向があるからで
ある。Aluminum nitrate (Al used in the present invention
(NO 3) 3 · 9H 2 O) , there is the action of the polishing accelerator, the addition amount is desirably 0.1 to 20 wt%, the most preferred amount is 1 to 20% by weight. The amount added is 0.
This is because if it is less than 1% by weight, its function is not sufficiently fulfilled, and if it exceeds 20% by weight, gelation tends to occur more easily.
【0008】本発明に用いるゲル化防止剤がホスホン
酸、フェナントロリン、アセチルアセトンアルミニウム
塩の一種若しくは二種以上の混合物であることは既に説
明した通りであるが、より具体的には、ホスホン酸とし
ては1−ヒドロキシエチリデン−1,1−ジホスホン酸
(C2 H6 O7 P2 )若しくはアミノトリメチレンホス
ホン酸(C2 H12O9 P3 N)を、フェナントロリンと
しては1,10−フェナントロリン一水和物(C12H8
N2 ・H2 O)を、アセチルアセトンアルミニウム塩と
してはアセチルアセトンのアルミニウム錯塩(Al〔C
H(COCH3 )3 〕)をそれぞれ例示することができ
る。また、含有量は0.1〜10重量%が望ましいが、
前記コロイダルシリカの濃度(添加量)、粒子径、及び
pHさらに前記ゲル化防止剤の種類によって最適添加量
が異なるので、実際はそれぞれの組成に合わせてその添
加量を調節する必要がある。ゲル化防止剤は、添加量が
少なすぎて例えば0.1重量%未満であるとゲル化防止
効果が表われず、多すぎて例えば10重量%を越えると
それ自身の働きでゲル化を引き起こしてしまうので、添
加量調整には注意が必要である。As described above, the gelling agent used in the present invention is one kind or a mixture of two or more kinds of phosphonic acid, phenanthroline and acetylacetone aluminum salt. More specifically, the phosphonic acid is 1-hydroxyethylidene-1,1-diphosphonic acid (C 2 H 6 O 7 P 2) or amino trimethylene phosphonic acid (C 2 H 12 O 9 P 3 N), as the phenanthroline 1,10-phenanthroline monohydrate Japanese products (C 12 H 8
N 2 · H 2 O) as an aluminum acetylacetone aluminum salt, an aluminum complex salt of acetylacetone (Al [C
H (COCH 3 ) 3 ]) can be exemplified. Further, the content is preferably 0.1 to 10% by weight,
Since the optimum addition amount depends on the concentration (addition amount) of the colloidal silica, the particle diameter, the pH, and the type of the gelation inhibitor, it is necessary to adjust the addition amount according to each composition in practice. When the amount of the gelling agent added is too small, for example, less than 0.1% by weight, the gelation preventing effect is not exhibited, and when it is too large, for example, more than 10% by weight, gelation occurs by itself. Therefore, it is necessary to be careful when adjusting the addition amount.
【0009】前記各成分からなる本発明の研磨用組成物
において、前記コロイダルシリカ粒子の表面には−Si
OH基及び−OH- イオンが存在し、アルカリイオンに
より電気二重層が形成され、粒子間の反発力により安定
化しているが、前記硝酸アルミニウムを研磨促進剤とし
て添加すると研磨促進効果が付与される反面、アルミニ
ウムイオンが表面電荷に干渉し、バランスが崩れ、粒子
どうしが接触してゲル化が起こる。しかし、前記ホスホ
ン酸、フェナントロリン、アセチルアセトンアルミニウ
ム塩を硝酸アルミニウムを添加する前に添加しておく
と、アルミニウムイオンの緩衝を防止し、その結果ゲル
化を防ぐことができるのである。In the polishing composition of the present invention comprising each of the above components, --Si is formed on the surface of the colloidal silica particles.
OH groups and -OH - ion present, the electric double layer is formed by alkali ions, although stabilized by repulsive forces between the particles, the polishing accelerating effect is imparted upon the addition of the aluminum nitrate as a polishing accelerator On the other hand, aluminum ions interfere with the surface charge, resulting in imbalance and gelation due to contact between particles. However, if the phosphonic acid, phenanthroline, and acetylacetone aluminum salt are added before the addition of aluminum nitrate, the buffering of aluminum ions can be prevented, and as a result, gelation can be prevented.
【0010】尚、本発明の研磨用組成物は、前記の各成
分の他に、界面活性剤、分散剤、防腐剤、安定化剤、及
びpH調整のための酸又はアルカリ剤を含有しても良
い。しかし、その種類及び添加量はゲル化を引き起こさ
ないよう細心の注意が必要である。The polishing composition of the present invention contains a surfactant, a dispersant, a preservative, a stabilizer, and an acid or alkali agent for pH adjustment, in addition to the above components. Is also good. However, it is necessary to pay close attention to the kind and amount of addition so as not to cause gelation.
【0011】[0011]
【実施例】公称3.5”(φ95mm)NiPメッキし
たディスクを表1に示す組成の実施例7種及び比較例2
種の研磨用組成物を用い、以下に示す研磨条件で研磨
し、その研磨性能について測定した。研磨性能の測定方
法は表3に示す。 (研磨条件) 研磨機;4ウェイ式両面ポリッシングマシン(定盤径φ
640mm) 研磨パッド;スエードタイプ(ポリテックスDG ロデ
ール(株)製) 下定盤回転数;60rpm スラリー供給量;30ml/min 研磨時間;5分間 加工圧力;50g/cm2 尚、表1には研磨砥粒、ゲル化防止剤の種類及び添加量
を記載したが、全ての研磨用組成物に5重量%の硝酸ア
ルミニウムを添加し、残部を水とした。また、スラリー
性状についても表3に示す測定方法に沿って測定した。
さらに、研磨後の基板上に直流スパッタ装置で厚さ10
0nmのCr層、厚さ40nmのCo86Cr12Ta2 磁
性層及び厚さ25nmのカーボン保護膜を成膜し、最後
に潤滑剤を2nmの厚さに塗布してそれぞれ磁気ディス
クを作製した。これらの磁気ディスクの磁気特性につい
ても表3に示す測定方法に沿って測定した。全ての結果
(研磨性能、スラリー性状、磁気特性)については、表
2に示した。EXAMPLE Nominal 3.5 ″ (φ95 mm) NiP-plated disks having the composition shown in Table 1 were prepared according to Example 7 and Comparative Example 2.
Polishing was performed under the polishing conditions shown below using one of the polishing compositions, and the polishing performance was measured. Table 3 shows the method of measuring the polishing performance. (Polishing conditions) Polishing machine: 4-way double-sided polishing machine (Plate diameter φ
640 mm) Polishing pad; Suede type (manufactured by Polytex DG Rodel Co., Ltd.) Lower platen rotation speed; 60 rpm Slurry supply amount; 30 ml / min Polishing time; 5 minutes Processing pressure; 50 g / cm 2 Although the types and amounts of the particles and the antigelling agent were described, 5% by weight of aluminum nitrate was added to all the polishing compositions, and the balance was water. The slurry properties were also measured according to the measurement method shown in Table 3.
Further, the thickness of the polished substrate is 10
A 0 nm Cr layer, a 40 nm thick Co 86 Cr 12 Ta 2 magnetic layer and a 25 nm thick carbon protective film were formed, and finally a lubricant was applied to a thickness of 2 nm to form magnetic disks. The magnetic characteristics of these magnetic disks were also measured according to the measuring method shown in Table 3. All results (polishing performance, slurry properties, magnetic properties) are shown in Table 2.
【0012】[0012]
【表1】 [Table 1]
【0013】[0013]
【表2】 [Table 2]
【0014】[0014]
【表3】 [Table 3]
【0015】前記表2より明らかなように、比較例1の
アルミナを使用した研磨用組成物では、研磨速度は高い
ものの表面粗さが大きいため、高密度磁気ディスク基板
用の研磨には適さないものであった。コロイダルシリカ
にゲル化防止剤を添加しない比較例2の研磨用組成物で
は、ゲル化の現象が確認された。これに対し、1−ヒド
ロキシエチリデン−1,1−ジホスホン酸、アミノトリ
メチレンホスホン酸、1,10−フェナントロリン一水
和物、アセチルアセトンアルミニウム塩を添加した実施
例1〜7の研磨用組成物で研磨したところ、ゲル化防止
剤の添加効果によりゲル化は発生していなかった。ま
た、ゲル化防止剤を添加したことによる研磨速度、研磨
表面精度(表面粗さ、研磨痕)、磁気ディスクとしての
性能(表面欠陥、グライドテスト、サーティファイヤー
テスト)の低下は見られなかった。As is clear from Table 2, the polishing composition using alumina of Comparative Example 1 is not suitable for polishing a high-density magnetic disk substrate because the polishing rate is high but the surface roughness is large. It was a thing. In the polishing composition of Comparative Example 2 in which the gelling inhibitor was not added to the colloidal silica, the phenomenon of gelation was confirmed. In contrast, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotrimethylenephosphonic acid, 1,10-phenanthroline monohydrate, and polishing with the polishing composition of Examples 1 to 7 to which acetylacetone aluminum salt was added As a result, gelation did not occur due to the effect of adding the gelation inhibitor. Further, the addition of the gelation inhibitor did not show any deterioration in polishing rate, polishing surface accuracy (surface roughness, polishing marks), and performance as a magnetic disk (surface defect, glide test, certifier test).
【0016】以上本発明の実施例を記載したが、本発明
は前記実施例に限定されるものではなく、特許請求の範
囲に記載の構成を変更しない限りどのようにでも実施す
ることができる。Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments and can be implemented in any manner as long as the configuration described in the claims is not changed.
【0017】[0017]
【発明の効果】以上説明したように本発明の研磨用組成
物及び研磨方法は、高密度磁気ディスク基板に要求され
る研磨表面粗さRa10Å以下で、微小の研磨痕やマイ
クロピット等の表面欠陥を極少レベルにした研磨面を得
ることができ、研磨パッドの目詰りなどを生ずることが
なく、継続的に研磨操作を行うことができる。したがっ
て、本発明は、コンピュータ等の記憶装置に使用される
磁気ディスク基板、特に高密度な磁気ディスク基板を製
造するのに適している。As described above, the polishing composition and the polishing method of the present invention have a polishing surface roughness Ra of 10 Å or less required for a high-density magnetic disk substrate and have surface defects such as minute polishing marks and micropits. It is possible to obtain a polishing surface with a minimal level, and it is possible to continuously perform the polishing operation without causing clogging of the polishing pad. Therefore, the present invention is suitable for manufacturing a magnetic disk substrate used for a storage device such as a computer, particularly a high-density magnetic disk substrate.
Claims (8)
組成物において、水、コロイド粒子、硝酸アルミニウム
及びゲル化防止剤からなることを特徴とする研磨用組成
物。1. A polishing composition for mirror-polishing a magnetic disk substrate, which comprises water, colloidal particles, aluminum nitrate and an anti-gelling agent.
ことを特徴とする請求項1に記載の研磨用組成物。2. The polishing composition according to claim 1, wherein the colloidal particles are colloidal silica.
で5〜120nmであることを特徴とする請求項2に記
載の研磨用組成物。3. The polishing composition according to claim 2, wherein the particle size of colloidal silica is 5 to 120 nm in average diameter.
%であることを特徴とする請求項2又は3に記載の研磨
用組成物。4. The weight ratio of colloidal silica is 1 to 40.
%, And the polishing composition according to claim 2 or 3.
20%であることを特徴とする請求項1〜4のいずれか
一項に記載の研磨用組成物。5. The weight ratio of aluminum nitrate is 0.1 to 0.1.
It is 20%, The polishing composition as described in any one of Claims 1-4.
ロリン、アセチルアセトアルミニウム塩の一種若しくは
二種以上の混合物であることを特徴とする請求項1〜5
のいずれか一項に記載の研磨用組成物。6. The anti-gelling agent is one or a mixture of two or more of phosphonic acid, phenanthroline, and acetylacetoaluminum salt.
The polishing composition according to any one of 1.
%であることを特徴とする請求項1〜6のいずれか一項
に記載の研磨用組成物。7. The weight ratio of the gelling inhibitor is 0.1-10.
%, And the polishing composition according to any one of claims 1 to 6.
おいて、請求項1〜7のいずれか一項に記載の研磨用組
成物を用いて研磨することを特徴とする磁気ディスク基
板の研磨方法。8. A method for polishing a magnetic disk substrate, which comprises polishing with the polishing composition according to claim 1 in a method for mirror-polishing a magnetic disk substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3417796A JP3653133B2 (en) | 1996-01-30 | 1996-01-30 | Polishing composition, magnetic disk substrate polishing method, and manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3417796A JP3653133B2 (en) | 1996-01-30 | 1996-01-30 | Polishing composition, magnetic disk substrate polishing method, and manufacturing method |
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JPH09204657A true JPH09204657A (en) | 1997-08-05 |
JP3653133B2 JP3653133B2 (en) | 2005-05-25 |
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JP3417796A Expired - Fee Related JP3653133B2 (en) | 1996-01-30 | 1996-01-30 | Polishing composition, magnetic disk substrate polishing method, and manufacturing method |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000328044A (en) * | 1999-05-17 | 2000-11-28 | Hitachi Chem Co Ltd | Cerium compound polisher and method for polishing substrate |
JP2001207161A (en) * | 2000-01-24 | 2001-07-31 | Showa Denko Kk | Composition for abrading magnetic disk substrate |
US6478835B2 (en) * | 2000-01-24 | 2002-11-12 | Showa Denko K.K. | Abrasive composition for polishing magnetic recording disk substrates |
JP2002327170A (en) * | 2001-04-27 | 2002-11-15 | Kao Corp | Polishing liquid composition |
US6551175B2 (en) | 2000-05-12 | 2003-04-22 | Kao Corporation | Polishing composition |
JP2003183630A (en) * | 2001-12-20 | 2003-07-03 | Fujimi Inc | Polishing composition |
US6620216B2 (en) | 2001-08-21 | 2003-09-16 | Kao Corporation | Polishing composition |
JP2004311652A (en) * | 2003-04-04 | 2004-11-04 | Rodel Nitta Co | Slurry for polishing |
JP2006159322A (en) * | 2004-12-03 | 2006-06-22 | Nihon Micro Coating Co Ltd | Polishing slurry and method |
WO2008078666A1 (en) * | 2006-12-27 | 2008-07-03 | Showa Denko K.K. | Water-based polishing slurry for polishing silicon carbide single crystal substrate, and polishing method for the same |
JP2009163810A (en) * | 2007-12-28 | 2009-07-23 | Kao Corp | Method of manufacturing hard disk substrate |
US8404009B2 (en) | 2007-10-29 | 2013-03-26 | Kao Corporation | Polishing composition for hard disk substrate |
KR20210111171A (en) | 2020-03-02 | 2021-09-10 | 에이티 실리카 가부시키가이샤 | Colloidal silica slurry |
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1996
- 1996-01-30 JP JP3417796A patent/JP3653133B2/en not_active Expired - Fee Related
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000328044A (en) * | 1999-05-17 | 2000-11-28 | Hitachi Chem Co Ltd | Cerium compound polisher and method for polishing substrate |
JP2001207161A (en) * | 2000-01-24 | 2001-07-31 | Showa Denko Kk | Composition for abrading magnetic disk substrate |
US6478835B2 (en) * | 2000-01-24 | 2002-11-12 | Showa Denko K.K. | Abrasive composition for polishing magnetic recording disk substrates |
US6551175B2 (en) | 2000-05-12 | 2003-04-22 | Kao Corporation | Polishing composition |
US6818031B2 (en) | 2001-04-27 | 2004-11-16 | Kao Corporation | Polishing composition |
JP2002327170A (en) * | 2001-04-27 | 2002-11-15 | Kao Corp | Polishing liquid composition |
US6620216B2 (en) | 2001-08-21 | 2003-09-16 | Kao Corporation | Polishing composition |
CN100390245C (en) * | 2001-08-21 | 2008-05-28 | 花王株式会社 | Polishing composition |
JP2003183630A (en) * | 2001-12-20 | 2003-07-03 | Fujimi Inc | Polishing composition |
JP2004311652A (en) * | 2003-04-04 | 2004-11-04 | Rodel Nitta Co | Slurry for polishing |
JP2006159322A (en) * | 2004-12-03 | 2006-06-22 | Nihon Micro Coating Co Ltd | Polishing slurry and method |
JP4667025B2 (en) * | 2004-12-03 | 2011-04-06 | 日本ミクロコーティング株式会社 | Polishing slurry and method |
WO2008078666A1 (en) * | 2006-12-27 | 2008-07-03 | Showa Denko K.K. | Water-based polishing slurry for polishing silicon carbide single crystal substrate, and polishing method for the same |
US8404009B2 (en) | 2007-10-29 | 2013-03-26 | Kao Corporation | Polishing composition for hard disk substrate |
JP2009163810A (en) * | 2007-12-28 | 2009-07-23 | Kao Corp | Method of manufacturing hard disk substrate |
KR20210111171A (en) | 2020-03-02 | 2021-09-10 | 에이티 실리카 가부시키가이샤 | Colloidal silica slurry |
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