JPH09199426A - Manufacture of microcrystalline silicon semiconductor thin film - Google Patents
Manufacture of microcrystalline silicon semiconductor thin filmInfo
- Publication number
- JPH09199426A JPH09199426A JP8006378A JP637896A JPH09199426A JP H09199426 A JPH09199426 A JP H09199426A JP 8006378 A JP8006378 A JP 8006378A JP 637896 A JP637896 A JP 637896A JP H09199426 A JPH09199426 A JP H09199426A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- microcrystalline silicon
- semiconductor thin
- substrate
- silicon semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、太陽電池等の半
導体デバイスに適用するための微結晶シリコン系半導体
薄膜の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a microcrystalline silicon based semiconductor thin film for application to semiconductor devices such as solar cells.
【０００２】[0002]
【従来の技術】従来、太陽電池等の半導体デバイスに適
用する微結晶シリコン系半導体薄膜の製造方法において
は、真空チャンバ内に、アノード側の基板とカソード側
の電極とを対向させて配置し、上記真空チャンバ内に、
シラン（ＳｉＨ4）等の反応ガスを導入する一方、真空
チャンバ内の排気を行う排気系を設けて、チャンバ内の
圧力を所望の値に保つようにしている。そのような状態
において、上記両電極間に高周波電圧を印加し、グロー
放電を発生させ、反応ガスを分解させる。そして、分解
された反応ガスのラジカルが基板の表面に付着し、さら
に堆積して、シリコン薄膜に成長する。2. Description of the Related Art Conventionally, in a method of manufacturing a microcrystalline silicon-based semiconductor thin film applied to a semiconductor device such as a solar cell, an anode side substrate and a cathode side electrode are arranged to face each other in a vacuum chamber, In the vacuum chamber,
While introducing a reaction gas such as silane (SiH 4 ), an exhaust system for exhausting the inside of the vacuum chamber is provided so that the pressure in the chamber is maintained at a desired value. In such a state, a high frequency voltage is applied between the electrodes to generate glow discharge and decompose the reaction gas. Then, the decomposed radicals of the reaction gas adhere to the surface of the substrate, are further deposited, and grow into a silicon thin film.
【０００３】通常、得られる薄膜は非晶質であるが、反
応ガスとしてＳｉＨ4に大量の水素（Ｈ2）ガスを加える
ことにより、微結晶シリコンが得られる。この理由とし
ては、基板表面のダングリングボンドが水素でターミ
ネイトされ、その結果ラジカルの表面反応が促進され、
微結晶化されやすくなる、気相中のシリコン（Ｓｉ）
系ラジカルの割合が水素希釈により低減され、堆積レー
トが下がり、微結晶化のための緩和時間（微結晶化が進
まないうちに次のラジカルがやってこない）が長くとれ
る、水素希釈により、気相中のＳｉ系重合ラジカル
（基板表面で動きにくい）が減る、結合の弱い非晶質
部分を、水素によりスパッタリングできることなどが考
えられている。Usually, the obtained thin film is amorphous, but microcrystalline silicon can be obtained by adding a large amount of hydrogen (H 2 ) gas to SiH 4 as a reaction gas. The reason for this is that dangling bonds on the substrate surface are terminated with hydrogen, and as a result, the surface reaction of radicals is promoted,
Silicon (Si) in the gas phase, which is easily crystallized
The proportion of system radicals is reduced by hydrogen dilution, the deposition rate is reduced, and the relaxation time for microcrystallization (the next radical does not arrive before microcrystallization progresses) is long. It is considered that the Si-based polymerized radicals (which are difficult to move on the substrate surface) in the inside can be reduced, and the amorphous portion having weak bonding can be sputtered with hydrogen.
【０００４】[0004]
【発明が解決しようとする課題】このような高水素希釈
法による微結晶シリコン系半導体膜の形成方法について
は、ある程度の膜厚を堆積しなければ、低抵抗、低光吸
収といった本来の微結晶半導体膜の特性を示さなかっ
た。特に、積層型非晶質太陽電池の逆接合層に用いる２
００オングストローム以下の薄膜においては、所望の膜
特性が得られていないのが現状である。Regarding the method of forming a microcrystalline silicon-based semiconductor film by such a high hydrogen dilution method, the original microcrystal such as low resistance and low light absorption is required unless a certain thickness is deposited. It did not show the characteristics of the semiconductor film. In particular, it is used for the reverse junction layer of a laminated amorphous solar cell 2
At present, the desired film characteristics are not obtained in the thin film having a thickness of 00 angstroms or less.
【０００５】この発明は、上述した従来の問題点に鑑み
なされたものにして、２００オングストローム以下の薄
膜においても、所望の微結晶半導体特性が得られる微結
晶シリコン系半導体薄膜の製造方法を提供することをそ
の目的とする。The present invention has been made in view of the above-mentioned conventional problems, and provides a method for producing a microcrystalline silicon-based semiconductor thin film capable of obtaining desired microcrystalline semiconductor characteristics even in a thin film of 200 angstroms or less. That is the purpose.
【０００６】[0006]
【課題を解決するための手段】この発明の微結晶シリコ
ン系半導体薄膜の製造方法は、シリコンを主成分とする
材料ガスに高周波電力を印加し、材料ガスを分解して基
板上に微結晶シリコン系半導体薄膜を堆積させる際に、
高周波電力をパルス的にオン・オフすると共に、基板に
超音波振動を加えることを特徴とする。A method of manufacturing a microcrystalline silicon-based semiconductor thin film according to the present invention comprises applying a high frequency power to a material gas containing silicon as a main component to decompose the material gas to form microcrystalline silicon on a substrate. When depositing a semiconductor thin film
It is characterized in that high-frequency power is turned on and off in a pulsed manner and ultrasonic vibration is applied to the substrate.
【０００７】この発明は上記方法を用いることにより、
超音波振動によりラジカルの基板反応がさらに促進され
ると共に、高周波電力をパルス的に印加することによ
り、気相中のＳｉ系重合ラジカルの割合をさらに低減で
きるのに加え、微結晶のための緩和時間がより長くとれ
る。このため、２００オングストローム以下の薄膜にお
いても、所望の微結晶半導体膜特性が得られる。By using the above method, the present invention provides
Ultrasonic vibration further promotes the substrate reaction of radicals, and by applying high-frequency power in pulses, the proportion of Si-based polymerized radicals in the gas phase can be further reduced, and relaxation for microcrystals is also possible. I have more time. Therefore, desired microcrystalline semiconductor film characteristics can be obtained even in a thin film having a thickness of 200 Å or less.
【０００８】[0008]
【発明の実施の形態】以下、この発明の実施の形態につ
き説明する。図１は、この発明による微結晶シリコン系
半導体薄膜を形成する装置の概略構成図である。図１に
示すように、真空チャンバ１内に、上部放電電極２とヒ
ータを内蔵した下部放電電極３が設けられ、下部放電電
極３上にガラス等の基板４が載置される。また、真空チ
ャンバ１は図示していない真空ポンプなどの排気システ
ム５にて、減圧状態にされる。Embodiments of the present invention will be described below. FIG. 1 is a schematic configuration diagram of an apparatus for forming a microcrystalline silicon semiconductor thin film according to the present invention. As shown in FIG. 1, an upper discharge electrode 2 and a lower discharge electrode 3 containing a heater are provided in a vacuum chamber 1, and a substrate 4 made of glass or the like is placed on the lower discharge electrode 3. The vacuum chamber 1 is decompressed by an exhaust system 5 such as a vacuum pump (not shown).
【０００９】材料ガスは、ＳｉＨ4ボンベ６ａ並びにＨ2
ボンベ６ｂ、加えて特定の導電型を得る場合にはドーピ
ングガスボンベ６ｃを用い、マスフローコントローラ７
ａ〜７ｃで流量を制御された後、真空チャンバ１内に導
入される。The material gas is SiH 4 cylinder 6a and H 2
The cylinder 6b and the doping gas cylinder 6c are used to obtain a specific conductivity type.
After the flow rate is controlled by a to 7c, it is introduced into the vacuum chamber 1.
【００１０】さて、この発明では、グロー放電を生起さ
せるため、上部電極２と下部電極３間に、１３．５６Ｍ
Ｈｚの高周波電力（ＲＦパワー）をある特定の周期でオ
ン・オフ（ＯＮ／ＯＦＦ）できる機能を有する電源８よ
り、高周波電力が印加される。そして、下部電極３には
基板寸法より一回り以上大きい領域に、ある特定の振動
周期で超音波振動を発生できるピエゾ振動板９が設置さ
れ、正弦波電源１０よりこのピエゾ振動板９に電力を印
可し、駆動させ、基板４に超音波振動が加えられる。Now, in the present invention, in order to generate a glow discharge, between the upper electrode 2 and the lower electrode 3 is 13.56M.
The high frequency power is applied from a power source 8 having a function of turning on / off (ON / OFF) the high frequency power (RF power) of Hz at a specific cycle. Then, a piezoelectric diaphragm 9 capable of generating ultrasonic vibration at a specific vibration cycle is installed in a region larger than the substrate size in the lower electrode 3, and electric power is supplied to the piezoelectric diaphragm 9 from a sine wave power source 10. It is applied and driven, and ultrasonic vibration is applied to the substrate 4.
【００１１】微結晶シリコン系半導体薄膜の基本的な形
成条件としては、従来法と同じく高水素希釈条件を用い
た。具体的には、反応時の圧力１０Ｐａ、基板温度２０
０℃、高周波電力８０Ｗ（連続印加時）、ＳｉＨ4流量
２ｃｃ／ｍ、Ｈ2流量１００ｃｃ／ｍとした。As a basic forming condition of the microcrystalline silicon semiconductor thin film, a high hydrogen dilution condition was used as in the conventional method. Specifically, the reaction pressure is 10 Pa and the substrate temperature is 20.
The temperature was 0 ° C., the high frequency power was 80 W (when continuously applied), the SiH 4 flow rate was 2 cc / m, and the H 2 flow rate was 100 cc / m.
【００１２】図２に、高周波（ＲＦ）パワーのＯＮ／Ｏ
ＦＦ周波数並びに、基板に印加する超音波振動の周波数
をパラメータとし、膜厚が約２００オングストロームの
微結晶シリコン半導体薄膜を形成後、透過型電子顕微鏡
（ＴＥＭ）にて、結晶粒の観測を行った結果を示す。Ｒ
Ｆパワー連続オン、超音波振動の印加なしの状態が、従
来条件に相当する。そして、結晶粒（大きさは２００〜
２０００オングストローム）が観測された場合を
「有」、観測されなかった場合を「無」で標記してい
る。FIG. 2 shows ON / O of high frequency (RF) power.
Using the FF frequency and the frequency of ultrasonic vibration applied to the substrate as parameters, a microcrystalline silicon semiconductor thin film having a film thickness of about 200 Å was formed, and then crystal grains were observed with a transmission electron microscope (TEM). The results are shown. R
The state in which the F power is continuously turned on and no ultrasonic vibration is applied corresponds to the conventional condition. And crystal grains (size is 200 ~
2000 angstroms) are indicated as "yes" when they are observed, and "absent" when they are not observed.
【００１３】この場合、従来の条件では全く微結晶シリ
コン半導体薄膜が形成されていないが、ＯＮ／ＯＦＦ周
波数が１ＫＨｚでは超音波振動周波数として１００ＫＨ
ｚ〜１０ＭＨｚの範囲で、超音波振動周波数が１ＭＨｚ
ではＯＮ／ＯＦＦ周波数として１００Ｈｚ〜１０ＫＨｚ
の範囲で、非晶質シリコン中に粒径が２０００オングス
トローム以下の結晶シリコンが混在した微結晶シリコン
半導体薄膜が形成されることが確認できた。In this case, no microcrystalline silicon semiconductor thin film is formed under the conventional conditions, but when the ON / OFF frequency is 1 KHz, the ultrasonic vibration frequency is 100 KH.
Ultrasonic vibration frequency is 1MHz in the range of z-10MHz
Then, the ON / OFF frequency is 100 Hz to 10 KHz
It was confirmed that a microcrystalline silicon semiconductor thin film in which crystalline silicon having a grain size of 2000 angstroms or less was mixed in the amorphous silicon was formed in the range.
【００１４】さらに、膜厚が約１００オングストローム
の微結晶シリコン半導体薄膜を形成し、同様の観測を行
った結果を、図３に示す。この場合、ＯＮ／ＯＦＦ周波
数が１ＫＨｚ、超音波振動周波数として１ＭＨｚ時の
み、微結晶シリコン半導体薄膜が観測された。Further, a microcrystalline silicon semiconductor thin film having a film thickness of about 100 angstroms was formed, and the same observation was performed. The result is shown in FIG. In this case, the microcrystalline silicon semiconductor thin film was observed only when the ON / OFF frequency was 1 KHz and the ultrasonic vibration frequency was 1 MHz.
【００１５】これらの結果は、この発明の優位性を示す
ものであり、特定の領域で薄膜下でも微結晶シリコン半
導体薄膜が形成できた要因としては、以下の３点が考え
られる。 （１）ＯＮ／ＯＦＦを１ＫＨｚ周期で行うことで、気相
中の重合ラジカルが減らせた（ラジカルの重合化はミリ
セカンドオーダーで進むと考えられる）。 （２）ＯＦＦ時、次のラジカルが発生しないので、表面
反応のための緩和時間が多くとれる。 （３）超音波振動周波数として１ＭＨｚで行うことで、
基板表面反応が大きく促進された（ラジカルの表面反応
時間はマイクロセカンドオーダーと見積もられており、
何らかの相関があると考えられる）。These results show the superiority of the present invention, and the following three points can be considered as the factors that the microcrystalline silicon semiconductor thin film could be formed even under the thin film in the specific region. (1) Polymerization radicals in the gas phase were reduced by performing ON / OFF at a 1 KHz cycle (polymerization of radicals is considered to proceed in the millisecond order). (2) Since the next radical is not generated when it is turned off, the relaxation time for the surface reaction can be long. (3) As the ultrasonic vibration frequency is 1 MHz,
Substrate surface reaction was greatly promoted (radical surface reaction time is estimated to be in the microsecond order,
It is considered that there is some correlation).
【００１６】この発明の効果を、実際のデバイスで評価
するため、積層型非晶質シリコン太陽電池を作成した。
構造としては、透明電極を有するガラス基板上に、順次
ｐ型／ｉ型／ｎ型／ｐ型／ｉ型／ｎ型層を積層した後、
裏面金属電極をつけた、いわゆるタンデムセルとした。
ここで、微結晶シリコン層は基板に近い側のｎ型層に用
いた。In order to evaluate the effect of the present invention in an actual device, a laminated amorphous silicon solar cell was prepared.
As a structure, after sequentially stacking p-type / i-type / n-type / p-type / i-type / n-type layers on a glass substrate having a transparent electrode,
A so-called tandem cell with a backside metal electrode was attached.
Here, the microcrystalline silicon layer was used for the n-type layer on the side closer to the substrate.
【００１７】図３で微結晶シリコン半導体薄膜が観測さ
れた条件に、０．５％ＰＨ3ガスを添加し、上記ｎ型微
結晶シリコン半導体層を１００オングストローム形成し
たタンデムセルと、比較のため従来条件に、０．５％Ｐ
Ｈ3ガスを添加し、上記ｎ型非晶質シリコン層を１００
オングストローム形成し、他の層は前記タンデムセルと
全て同じ条件としたタンデムセルとを作成し、両者の光
照射下での電圧−電流特性を測定した結果を図４に示
す。Under the condition that a microcrystalline silicon semiconductor thin film is observed in FIG. 3, 0.5% PH 3 gas is added to the tandem cell in which the n-type microcrystalline silicon semiconductor layer is formed to 100 Å. 0.5% P for the condition
H 3 gas is added to make the n-type amorphous silicon layer 100
FIG. 4 shows the results of measuring the voltage-current characteristics of the tandem cells under the same conditions as those of the tandem cells in which the other layers were formed by angstrom formation under the same conditions.
【００１８】実線で示したこの発明によるタンデムセル
特性に対し、破線で示した従来条件によるタンデムセル
は、明らかにｎｐ逆接合部分における整流特性が現れ、
特性不良を起こしていることがわかる。これは、従来条
件では、逆接合部のｎ層が１００オングストロームでは
微結晶化されておらず、ｐ層との間でオーミック特性が
取れなかったことによる。In contrast to the tandem cell characteristic according to the present invention shown by the solid line, the tandem cell under the conventional condition shown by the broken line clearly shows the rectifying characteristic at the np reverse junction portion.
It can be seen that the characteristics are defective. This is because under the conventional conditions, the n layer at the reverse junction was not microcrystallized at 100 angstroms, and ohmic characteristics could not be obtained with the p layer.
【００１９】さらに比較のため、従来の条件下におい
て、同ｎ層を３００オングストロームと厚く作成し、微
結晶シリコン層として機能させ、他層も膜厚を最適化し
た場合と、この発明によるタンデムセルとの比較特性を
行った結果を表１に示す。Further, for comparison, the tandem cell according to the present invention and the case where the thickness of the n-layer is 300 angstroms and is made to function as a microcrystalline silicon layer and the thickness of the other layers is optimized under the conventional conditions. Table 1 shows the results of comparison characteristics with.
【００２０】[0020]
【表１】 （セル面積：１ｃｍ角、照射光：ＡＭ−１．５、１００ｍＷ／ｃｍ2）[Table 1] (Cell area: 1 cm square, irradiation light: AM-1.5, 100 mW / cm 2 )
【００２１】この場合においても、この発明では、各パ
ラメータが改善され、効率として４％の向上が見られ
た。この理由としては、この発明においては、ｎ型微結
晶シリコン層を１００オングストロームと薄くできるた
め光の吸収損失が少ないこと並びに微結晶半導体特性で
ある低抵抗化がより図れており電気的損失も少ないこと
による。Also in this case, in the present invention, each parameter was improved and the efficiency was improved by 4%. The reason for this is that in the present invention, the n-type microcrystalline silicon layer can be made as thin as 100 angstroms, so that the light absorption loss is small, and the resistance, which is a characteristic of the microcrystalline semiconductor, is further reduced and the electrical loss is also small. It depends.
【００２２】上記した実施の形態においては、微結晶シ
リコン半導体薄膜について説明したが、シリコンを主材
料としたアロイ、例えば、ＳｉＣ、ＳｉＧｅなどの微結
晶シリコン系半導体薄膜にもこの発明を適用することが
できる。In the above-mentioned embodiments, the microcrystalline silicon semiconductor thin film has been described. However, the present invention can be applied to an alloy containing silicon as a main material, for example, a microcrystalline silicon semiconductor thin film such as SiC or SiGe. You can
【００２３】また、材料ガスについても、ＳｉＨ4に限
らず、Ｓｉ2Ｈ6、Ｓｉ3Ｈ8等の他のシリコンを主成分と
する材料ガスを用いることができる。The material gas is not limited to SiH 4 , but other material gas containing silicon as a main component such as Si 2 H 6 and Si 3 H 8 can be used.
【００２４】[0024]
【発明の効果】以上説明したように、この発明による方
法を用いることにより、２００オングストローム以下の
薄膜においても、所望の微結晶半導体特性が得られる。As described above, by using the method according to the present invention, desired microcrystalline semiconductor characteristics can be obtained even in a thin film having a thickness of 200 Å or less.
【００２５】また、この発明法による微結晶シリコン系
半導体薄膜を積層型非晶質シリコン太陽電池の逆接合層
に適用することで、効率として４％の向上が図れる。By applying the microcrystalline silicon semiconductor thin film according to the method of the present invention to the reverse junction layer of the laminated amorphous silicon solar cell, the efficiency can be improved by 4%.
【図１】この発明による微結晶半導体薄膜の形成装置の
概略構成図であるFIG. 1 is a schematic configuration diagram of an apparatus for forming a microcrystalline semiconductor thin film according to the present invention.
【図２】微結晶シリコン半導体薄膜の形成結果を示す図
である。FIG. 2 is a diagram showing a result of forming a microcrystalline silicon semiconductor thin film.
【図３】微結晶シリコン半導体薄膜の形成結果を示す図
である。FIG. 3 is a diagram showing a result of forming a microcrystalline silicon semiconductor thin film.
【図４】この発明方法による太陽電池と従来方法による
積層型非晶質太陽電池の特性を示す図である。FIG. 4 is a diagram showing characteristics of a solar cell according to the method of the present invention and a laminated amorphous solar cell according to a conventional method.
１ 真空チャンバ ４ 基板 ８ 高周波電源 ９ 振動板 1 vacuum chamber 4 substrate 8 high frequency power supply 9 diaphragm
Claims (2)
波電力を印加し、この材料ガスを分解して基板上に微結
晶シリコン系半導体膜を堆積させる際に、前記高周波電
力をパルス的にオン・オフすると共に、基板に超音波振
動を加えることを特徴とする微結晶シリコン系半導体薄
膜の製造方法。1. When a high frequency power is applied to a material gas containing silicon as a main component and the material gas is decomposed to deposit a microcrystalline silicon-based semiconductor film on a substrate, the high frequency power is turned on in a pulsed manner. A method for manufacturing a microcrystalline silicon-based semiconductor thin film, which comprises turning off and applying ultrasonic vibration to the substrate.
１０ＫＨｚとし、超音波振動周波数は、１００ＫＨｚか
ら１０ＭＨｚとすることを特徴とする請求項１に記載の
微結晶シリコン系半導体薄膜の製造方法。2. The method for producing a microcrystalline silicon-based semiconductor thin film according to claim 1, wherein the on / off cycle is 100 Hz to 10 KHz, and the ultrasonic vibration frequency is 100 KHz to 10 MHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8006378A JPH09199426A (en) | 1996-01-18 | 1996-01-18 | Manufacture of microcrystalline silicon semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8006378A JPH09199426A (en) | 1996-01-18 | 1996-01-18 | Manufacture of microcrystalline silicon semiconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09199426A true JPH09199426A (en) | 1997-07-31 |
Family
ID=11636728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8006378A Pending JPH09199426A (en) | 1996-01-18 | 1996-01-18 | Manufacture of microcrystalline silicon semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09199426A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0949685A2 (en) * | 1998-03-16 | 1999-10-13 | Canon Kabushiki Kaisha | Semiconductor element and its manufacturing method |
| EP1087034A1 (en) * | 1999-09-22 | 2001-03-28 | GfE Metalle und Materialien GmbH | Plasma coating method and three dimentional coated substrate |
| US9945032B2 (en) | 2013-01-11 | 2018-04-17 | The Aerospace Corporation | Systems and methods for enhancing mobility of atomic or molecular species on a substrate at reduced bulk temperature using acoustic waves, and structures formed using same |
| US10160061B2 (en) | 2016-08-15 | 2018-12-25 | The Aerospace Corporation | Systems and methods for modifying acoustic waves based on selective heating |
| US10173262B2 (en) | 2016-02-04 | 2019-01-08 | The Aerospace Corporation | Systems and methods for monitoring temperature using acoustic waves during processing of a material |
-
1996
- 1996-01-18 JP JP8006378A patent/JPH09199426A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0949685A2 (en) * | 1998-03-16 | 1999-10-13 | Canon Kabushiki Kaisha | Semiconductor element and its manufacturing method |
| EP0949685A3 (en) * | 1998-03-16 | 2007-06-13 | Canon Kabushiki Kaisha | Semiconductor element and its manufacturing method |
| EP1087034A1 (en) * | 1999-09-22 | 2001-03-28 | GfE Metalle und Materialien GmbH | Plasma coating method and three dimentional coated substrate |
| US9945032B2 (en) | 2013-01-11 | 2018-04-17 | The Aerospace Corporation | Systems and methods for enhancing mobility of atomic or molecular species on a substrate at reduced bulk temperature using acoustic waves, and structures formed using same |
| US10173262B2 (en) | 2016-02-04 | 2019-01-08 | The Aerospace Corporation | Systems and methods for monitoring temperature using acoustic waves during processing of a material |
| US10160061B2 (en) | 2016-08-15 | 2018-12-25 | The Aerospace Corporation | Systems and methods for modifying acoustic waves based on selective heating |
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