JPH09190004A - Electrophotographic photoreceptor, process cartridge having the electrophotographic photoreceptor and image forming device - Google Patents

Electrophotographic photoreceptor, process cartridge having the electrophotographic photoreceptor and image forming device

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Publication number
JPH09190004A
JPH09190004A JP8293887A JP29388796A JPH09190004A JP H09190004 A JPH09190004 A JP H09190004A JP 8293887 A JP8293887 A JP 8293887A JP 29388796 A JP29388796 A JP 29388796A JP H09190004 A JPH09190004 A JP H09190004A
Authority
JP
Japan
Prior art keywords
group
integer
photosensitive member
electrophotographic photoreceptor
electrophotographic photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8293887A
Other languages
Japanese (ja)
Other versions
JP3267519B2 (en
Inventor
和夫 ▲吉▼永
Kazuo Yoshinaga
Shunichiro Nishida
俊一郎 西田
Yuichi Hashimoto
雄一 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP29388796A priority Critical patent/JP3267519B2/en
Publication of JPH09190004A publication Critical patent/JPH09190004A/en
Application granted granted Critical
Publication of JP3267519B2 publication Critical patent/JP3267519B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Photoreceptors In Electrophotography (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain an electrophotographic photoreceptor which is free from light scattering and bleeding, is uniform and with which the compatibility of low surface energy with mechanical and electrical durability is attained by incorporating a curable org. silicon high polymer and specific resin into the surface layer of the electrophotographic photoreceptor. SOLUTION: The curable org. silicon high polymer and the resin obtd. by curing the org. silicon denatured hole transferable compd. expressed by the formula are incorporated into the surface layer of the electrophotographic photoreceptor having a photosensitive layer on a substrate. In the formula, A denotes a hole transferable group; Q denotes a hydrolyzable group or hydroxyl group; R<2> denotes a substd. or unsubstd. univalent hydrocarbon group; R<3> denotes a substd. or unsubstd. alkylene group or arylene group; (m) denotes an integer from 1 to 3; 1 denotes a positive integer. The charge transferability in this case refers to the ability to transfer charges and is preferably <=6.2eV in ionization potential.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、特定の表面層を有
する電子写真感光体、該電子写真感光体を有するプロセ
スカートリッジ及び画像形成装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrophotographic photosensitive member having a specific surface layer, a process cartridge having the electrophotographic photosensitive member, and an image forming apparatus.

【0002】[0002]

【従来の技術】電子写真感光体の表面には、帯電手段、
現像手段、転写手段及びクリーニング手段等により電気
的あるいは機械的な外力が直接に加えられるために、そ
れらに対する耐久性が要求される。
2. Description of the Related Art A charging means,
Since external electrical or mechanical force is directly applied by the developing means, the transferring means, the cleaning means, etc., durability against them is required.

【0003】具体的には、摺擦による感光体表面の摩耗
や傷の発生、及び高湿下におけるコロナ帯電時に発生し
易いオゾンによる感光体表面の劣化等に対する耐久性が
要求される。また、現像とクリーニングの繰り返し等に
起因した、感光体表面へのトナーの付着という問題もあ
り、これに対しては感光体表面のクリーニング性の向上
が求められている。
Specifically, durability is required against abrasion and scratches on the surface of the photoconductor due to rubbing, and deterioration of the surface of the photoconductor due to ozone which tends to occur during corona charging under high humidity. In addition, there is a problem that toner adheres to the surface of the photoconductor due to repetition of development and cleaning. For this purpose, improvement in the cleaning property of the surface of the photoconductor is required.

【0004】上記のような感光体表面に要求される様々
な特性を満たすために樹脂を主成分とする種々の表面保
護層を設ける試みがなされている。例えば、特開昭57
−30843号公報には、導電性粒子として金属酸化物
粒子を添加することによって耐摩耗性と抵抗を制御した
保護層が提案されている。
Attempts have been made to provide various surface protective layers containing a resin as a main component in order to satisfy various characteristics required for the surface of the photoreceptor as described above. For example, Japanese Unexamined Patent Publication No.
JP-A-30843 proposes a protective layer in which abrasion resistance and resistance are controlled by adding metal oxide particles as conductive particles.

【0005】また、表面層中に種々の物質を添加するこ
とで感光体表面の物性を改善することも検討されてい
る。例えば、シリコーンの低表面エネルギーに注目した
添加物としては、シリコーンオイル(特開昭61−13
2954号公報)、ポリジメチルシロキサン、シリコー
ン樹脂粉体(特開平4−324454号公報)、架橋シ
リコーン樹脂、ポリ(カーボネート−シリコーン)ブロ
ック共重合体、シリコーン変成ポリウレタン、シリコー
ン変成ポリエステルが報告されている。
It has also been studied to improve the physical properties of the photoreceptor surface by adding various substances to the surface layer. For example, as an additive focused on low surface energy of silicone, silicone oil (JP-A-61-13)
2954), polydimethylsiloxane, silicone resin powder (JP-A-4-324454), crosslinked silicone resin, poly (carbonate-silicone) block copolymer, silicone modified polyurethane, silicone modified polyester. .

【0006】低表面エネルギーの代表的なポリマーとし
てはフッ素系高分子があり、該フッ素系高分子としては
ポリテトラフルオロエチレン粉体、フッ化カーボン粉末
等が挙げられる。
A typical polymer having a low surface energy is a fluorinated polymer, and examples of the fluorinated polymer include polytetrafluoroethylene powder and fluorinated carbon powder.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、金属酸
化物等を含む表面保護層は高い硬度を有するものが得ら
れるが、表面エネルギーは大きくなり易いためにクリー
ニング性等に問題がある。シリコーン系樹脂は表面エネ
ルギーが小さい点で優れているが、他の樹脂に対して十
分な相溶性を示さないため、添加系では凝集し易く光散
乱を生じたり、ブリードして表面に偏析するために安定
した特性を示さない等の問題があった。また、低表面エ
ネルギーのポリマーであるフッ素系高分子は一般に溶媒
に不溶であり、分散性も不良であることから、平滑な感
光体表面を得ることが困難であり、屈折率も小さいこと
から光散乱が生じ易く、それにより透明性の劣化を生じ
る問題点があった。また、フッ素系高分子は一般的に柔
らかいために傷がつき易い問題点があった。
However, although a surface protective layer containing a metal oxide or the like can have high hardness, it has a problem in cleaning properties and the like because the surface energy is easily increased. Silicone resins are excellent in that they have a small surface energy, but they do not show sufficient compatibility with other resins, so they easily aggregate in the addition system, causing light scattering or bleeding and segregation on the surface. However, there are problems such as not exhibiting stable characteristics. In addition, fluoropolymers, which are low surface energy polymers, are generally insoluble in solvents and have poor dispersibility, making it difficult to obtain a smooth photoconductor surface and having a low refractive index There is a problem that scattering is likely to occur, which causes deterioration of transparency. Further, there is a problem that the fluorine-based polymer is generally soft and easily damaged.

【0008】本発明の目的は、上記の問題点を解決する
ことのできる、すなわち光散乱やブリードがなく、均一
で、低表面エネルギーと機械的、電気的耐久性を両立し
た電子写真感光体、及び該電子写真感光体を有するプロ
セスカートリッジ及び画像形成装置を提供することにあ
る。
An object of the present invention is to solve the above-mentioned problems, that is, an electrophotographic photosensitive member which is free of light scattering and bleeding, is uniform, and has both low surface energy and mechanical and electrical durability, And to provide a process cartridge and an image forming apparatus having the electrophotographic photosensitive member.

【0009】[0009]

【課題を解決するための手段】すなわち本発明は、支持
体上に感光層を有する電子写真感光体において、該電子
写真感光体の表面層が硬化性有機ケイ素系高分子及び下
記式(1)
That is, the present invention provides an electrophotographic photoreceptor having a photosensitive layer on a support, wherein the surface layer of the electrophotographic photoreceptor is a curable organosilicon polymer and the following formula (1):

【0010】[0010]

【外8】 (Aは正孔輸送性基を示し、Qは加水分解性基または水
酸基を示し、R2 は置換もしくは無置換の一価炭化水素
基を示し、R3 は置換もしくは無置換のアルキレン基ま
たはアリーレン基を示し、mは1〜3の整数を示し、1
は正の整数を示す。)で示される有機ケイ素変成正孔輸
送性化合物を硬化することによって得られる樹脂を含有
することを特徴とする電子写真感光体である。
[Outside 8] (A represents a hole transporting group, Q represents a hydrolyzable group or a hydroxyl group, R 2 represents a substituted or unsubstituted monovalent hydrocarbon group, and R 3 represents a substituted or unsubstituted alkylene group or arylene. Represents a group, m represents an integer of 1 to 3, and 1
Represents a positive integer. An electrophotographic photoreceptor comprising a resin obtained by curing an organosilicon-modified hole transporting compound represented by the formula (1).

【0011】また、本発明は、上記電子写真感光体を有
するプロセスカートリッジ及び画像形成装置である。
Further, the present invention is a process cartridge and an image forming apparatus having the above electrophotographic photosensitive member.

【0012】[0012]

【発明の実施の形態】上記式(1)において、Qは加水
分解性基または水酸基を示し、加水分解性基としては、
メトキシ基、エトキシ基、メチルエチルケトオキシム
基、ジエチルアミノ基、アセトキシ基、プロペノキシ
基、プロポキシ基、ブトキシ基、メトキシエチル基等が
挙げられ、より好ましくは−OR1 で示される。R1
加水分解性基であるアルコキシ基あるいはアルコキシア
ルコキシ基を形成する基であり、炭素数が1〜6である
ことが好ましく、例えばメチル基、エチル基、プロピル
基、ブチル基、ペンチル基、ヘキシル基、メトキシエチ
ル基等が挙げられる。Qとしては、式−OR1 であるア
ルコキシ基が好ましい。一般にケイ素原子に結合してい
る加水分解性基の数mが1のときは有機ケイ素化合物自
体での縮合は起こりにくく高分子化反応は抑制される
が、mが2または3のときは縮合反応が生じ易く高度に
架橋反応を行うことが可能であることから、得られる硬
化物の硬度等の改善が期待できるが、高分子量化して溶
解性及びケイ素系熱硬化樹脂との反応性が変化してしま
う場合がある。
BEST MODE FOR CARRYING OUT THE INVENTION In the above formula (1), Q represents a hydrolyzable group or a hydroxyl group.
Examples thereof include a methoxy group, an ethoxy group, a methylethylketoxime group, a diethylamino group, an acetoxy group, a propenoxy group, a propoxy group, a butoxy group and a methoxyethyl group, and more preferably -OR 1 . R 1 is an alkoxy group which is a hydrolyzable group or a group which forms an alkoxyalkoxy group, and preferably has 1 to 6 carbon atoms, for example, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, Hexyl group, methoxyethyl group and the like can be mentioned. As Q, an alkoxy group represented by the formula —OR 1 is preferable. Generally, when the number m of hydrolyzable groups bonded to a silicon atom is 1, the condensation reaction in the organosilicon compound itself is difficult to occur and the polymerization reaction is suppressed, but when m is 2 or 3, the condensation reaction is Since it is likely to occur and a high degree of crosslinking reaction can be carried out, it is expected to improve the hardness and the like of the obtained cured product, but the solubility and reactivity with the silicon-based thermosetting resin change due to the increase in the molecular weight. It may happen.

【0013】R2 はケイ素原子に直接結合した一価炭化
水素基であり、炭素数が1〜15であることが好まし
く、例えばメチル基、エチル基、プロピル基、ブチル
基、ペンチル基等が挙げられる。この他に、ビニル基、
アリル基等のアルケニル基、フェニル基、トリル基等の
アリール基が挙げられる。また、R2 が有してもよい置
換基としてはフッ素等のハロゲン原子が挙げられ、ハロ
ゲン置換一価炭化水素基としては、例えばトリフルオロ
プロピル基、ヘプタフルオロペンチル基、ノナフルオロ
ヘキシル基等で代表されるフロロ炭化水素基等が挙げら
れる。
R 2 is a monovalent hydrocarbon group directly bonded to a silicon atom and preferably has 1 to 15 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group and a pentyl group. To be Besides this, vinyl group,
Examples thereof include alkenyl groups such as allyl group and aryl groups such as phenyl group and tolyl group. Further, examples of the substituent that R 2 may have include a halogen atom such as fluorine, and examples of the halogen-substituted monovalent hydrocarbon group include a trifluoropropyl group, a heptafluoropentyl group, a nonafluorohexyl group and the like. Typical examples thereof include fluorohydrocarbon groups.

【0014】R3 はアルキレン基またはアリーレン基を
示し、炭素数が1〜18であることが好ましく、例え
ば、メチレン基、エチレン基、プロピレン基、シクロヘ
キシリデン基、フェニレン基、ビフェニレン基、ナフチ
レン基、更にはこれらが結合した基等が挙げられる。ま
た、R3 が有してもよい置換基としてはメチル基、エチ
ル基等のアルキル基、フェニル基等のアリール基、フッ
素原子、塩素原子等のハロゲン原子が挙げられる。これ
らの中ではR3 が式
R 3 represents an alkylene group or an arylene group, and preferably has 1 to 18 carbon atoms. For example, methylene group, ethylene group, propylene group, cyclohexylidene group, phenylene group, biphenylene group, naphthylene group. Further, a group to which these are bonded may be mentioned. Further, examples of the substituent which R 3 may have include an alkyl group such as a methyl group and an ethyl group, an aryl group such as a phenyl group, and a halogen atom such as a fluorine atom and a chlorine atom. Of these, R 3 is the formula

【0015】[0015]

【外9】 (nは正の整数)で示されることが好ましい。[Outside 9] It is preferable that (n is a positive integer).

【0016】nは1〜18であることが更に好ましい
が、必ずしも直鎖状である必要はない。nが19以上で
は電荷輸送性基Aが運動し易いため硬度が低下し、ケイ
素原子に直接電荷輸送性基が結合していると立体障害等
で安定性、物性に悪影響を与え易い。nは好ましくは2
〜8である。
It is more preferable that n is from 1 to 18, but it does not necessarily have to be linear. When n is 19 or more, the charge-transporting group A is likely to move, so that the hardness is lowered, and when the charge-transporting group is directly bonded to a silicon atom, stability and physical properties are likely to be adversely affected by steric hindrance or the like. n is preferably 2
88.

【0017】また1は正の整数を示すが1〜5であるこ
とが好ましい。1が6以上では硬化反応において未反応
基が残り易いため電気特性等が低下し易い。
Although 1 represents a positive integer, it is preferably 1 to 5. When 1 is 6 or more, unreacted groups are likely to remain in the curing reaction, so that electric characteristics and the like are likely to be deteriorated.

【0018】また、本発明における電荷輸送性とは電荷
を輸送する能力のことであり、イオン化ポテンシャルで
6.2eV以下であることが好ましい。つまり、前記式
(1)で示される有機ケイ素変成電荷輸送性化合物及び
Aの水素付加物は、イオン化ポテンシャルが6.2eV
以下であることが好ましく、特には4.5〜6.2eV
であることが好ましい。イオン化ポテンシャルが6.2
eVを越えると正孔注入が起こりにくく帯電し易くな
る。また、4.5eV未満では化合物が容易に酸化され
るために劣化し易くなる。イオン化ポテンシャルは大気
下光電子分析法(理研計器製、表面分析装置AC−1)
によって測定される。
The charge transport property in the present invention is the ability to transport charges, and the ionization potential is preferably 6.2 eV or less. That is, the organosilicon-modified charge-transporting compound represented by the formula (1) and the hydrogenated product of A have an ionization potential of 6.2 eV.
Or less, particularly 4.5 to 6.2 eV.
It is preferred that The ionization potential is 6.2
If it exceeds eV, hole injection is unlikely to occur and charging becomes easy. If it is less than 4.5 eV, the compound is easily oxidized and thus easily deteriorates. Ionization potential is measured by photoelectron analysis under atmosphere (RIKEN Keiki, surface analyzer AC-1)
Is measured by

【0019】また、上記有機ケイ素変成正孔輸送性化合
物は正孔輸送能として1×107 cm2 /Vsec以上
のドリフト移動度を有しているものが好ましい。1×1
-7cm2 /Vsec未満では電子写真感光体として露
光後、現像までに正孔が十分に移動できないために見か
け上感度が低減し、残留電位も高くなってしまう問題が
発生する場合がある。
Further, the organosilicon-modified hole transporting compound preferably has a hole mobility of drift mobility of 1 × 10 7 cm 2 / Vsec or more. 1x1
If it is less than 0 -7 cm 2 / Vsec, the holes may not move sufficiently after exposure as an electrophotographic photosensitive member before development, so that the sensitivity may be apparently decreased and the residual potential may be increased. .

【0020】前記式(1)の正孔輸送性基Aとしては、
正孔輸送性を示すものであればいずれのものでもよく、
その水素付加化合物(正孔輸送物質)として示せば、例
えば、オキサゾール誘導体、オキサジアゾール誘導体、
イミダゾール誘導体、トリフェニルアミン等のトリアリ
ールアミン誘導体、9−(p−ジエチルアミノスチリ
ル)アントラセン、1,1−ビス−(4−ジベンジルア
ミノフェニル)プロパン、スチリルアントラセン、スチ
リルピラゾリン、フェニルヒドラゾン類、α−フェニル
スチルベン誘導体、チアゾール誘導体、トリアゾール誘
導体、フェナジン誘導体、アクリジン誘導体、ベンゾフ
ラン誘導体、ベンズイミダゾール誘導体、チオフェン誘
導体、N−フェニルカルバゾール誘導体等が挙げられ
る。
The hole transporting group A of the above formula (1) is
Any material may be used as long as it exhibits hole transportability.
Examples of the hydrogen addition compound (hole transporting substance) include, for example, oxazole derivatives, oxadiazole derivatives,
Imidazole derivatives, triarylamine derivatives such as triphenylamine, 9- (p-diethylaminostyryl) anthracene, 1,1-bis- (4-dibenzylaminophenyl) propane, styrylanthracene, styrylpyrazoline, phenylhydrazones, Examples thereof include α-phenylstilbene derivatives, thiazole derivatives, triazole derivatives, phenazine derivatives, acridine derivatives, benzofuran derivatives, benzimidazole derivatives, thiophene derivatives, N-phenylcarbazole derivatives.

【0021】正孔輸送性基Aとしては、構造が下記式
(2)で示されるものが好ましい。
The hole transporting group A is preferably one having a structure represented by the following formula (2).

【0022】[0022]

【外10】 (R4 、R5 及びR6 は有機基であり、そのうちの少な
くとも1つは芳香族炭化水素環基または複素環基を示
し、R4 、R5 及びR6 は同一であっても異なっていて
もよい。) このように、正孔輸送性基AはR4 、R5 及びR6 のう
ちの少なくとも1つの基の水素原子が除かれて形成され
た基である。
[Outside 10] (R 4 , R 5 and R 6 are organic groups, at least one of which represents an aromatic hydrocarbon ring group or a heterocyclic group, and R 4 , R 5 and R 6 are the same or different. As described above, the hole-transporting group A is a group formed by removing the hydrogen atom of at least one of R 4 , R 5 and R 6 .

【0023】R4 、R5 及びR6 の構造の好ましい具体
例を以下に示す。
Preferred specific examples of the structures of R 4 , R 5 and R 6 are shown below.

【0024】[0024]

【外11】 [Outside 11]

【0025】[0025]

【外12】 [Outside 12]

【0026】[0026]

【外13】 [Outside 13]

【0027】上記式(1)の有機ケイ素変成正孔輸送性
化合物の合成方法としては、公知の方法、例えば、芳香
族環にビニル基を有する化合物と置換基を有する水素化
ケイ素化合物とから白金系触媒、あるいは有機過酸化物
等を触媒にヒドロシリル化反応を行うものが好適に用い
られる。この場合に使用される白金触媒についてはとく
に限定するものではなく、通常のヒドロシリル化反応、
付加型シリコーンゴムに用いられている白金触媒であれ
ばよく、塩化白金、塩化白金酸、白金−オレフィン錯
体、白金−フォスフィン錯体等が挙げられる。白金触媒
の添加量に関しては特に制限するものではないが、残留
触媒が特性に悪影響を与えないようにできる限り少量で
用いることが望ましい。芳香族環にビニル基を有する化
合物と置換基を有する水素化ケイ素化合物とから白金系
触媒等により、付加反応より本発明の化合物を合成する
場合にはビニル基のα位と反応する場合とβ位と反応す
る場合があり、一般には混合物が生じる。本発明におい
てはα位、β位のどちらに反応したものも用いられる
が、ケイ素原子と電荷輸送性基を結合している炭化水素
基の炭素数が少ない場合には立体障害からはβ位に反応
したものが好ましい。
As a method for synthesizing the organosilicon-modified hole-transporting compound of the above formula (1), a known method, for example, platinum from a compound having a vinyl group in the aromatic ring and a silicon hydride compound having a substituent is used. A system catalyst or a catalyst which performs a hydrosilylation reaction using a catalyst such as an organic peroxide is preferably used. The platinum catalyst used in this case is not particularly limited, and a normal hydrosilylation reaction,
Any platinum catalyst used in addition-type silicone rubber may be used, and examples thereof include platinum chloride, chloroplatinic acid, platinum-olefin complex, and platinum-phosphine complex. The amount of the platinum catalyst to be added is not particularly limited, but it is preferable to use the platinum catalyst in the smallest possible amount so that the residual catalyst does not adversely affect the properties. In the case of synthesizing the compound of the present invention from an addition reaction of a compound having a vinyl group in the aromatic ring and a silicon hydride compound having a substituent with a platinum-based catalyst or the like, the case of reacting with the α-position of the vinyl group and β It may react with the position, generally resulting in a mixture. In the present invention, those reacted at both the α-position and the β-position can be used, but when the number of carbon atoms of the hydrocarbon group bonding the silicon atom and the charge transporting group is small, the steric hindrance leads to the β-position. Those that have reacted are preferred.

【0028】有機過酸化物としては室温以上に半減期を
示すものであればよく、特に、ラウリルパーオキシド等
のアルキル過酸化物が水素引き抜きを起こしにくいこと
から好適に用いることができる。ビニル基を有しないも
のについては、芳香族環をホルミル化し、還元、脱水す
るか直接wittig反応によりビニル基を導入する方
法等により、本発明の合成原料として用いることが可能
である。
As the organic peroxide, any organic peroxide having a half-life at room temperature or higher can be used. In particular, an alkyl peroxide such as lauryl peroxide can be suitably used because it does not easily cause hydrogen abstraction. Those not having a vinyl group can be used as the synthetic raw material of the present invention by a method of formylating an aromatic ring, reducing or dehydrating, or directly introducing a vinyl group by a Wittig reaction.

【0029】次に、有機ケイ素系高分子について説明す
る。
Next, the organosilicon polymer will be described.

【0030】有機ケイ素系高分子としては、オルガノポ
リシロキサン、ポリシルアルキレンシロキサン、ポリシ
ルアリーレンシロキサン等が例示される。また、ケイ素
原子に結合した一価の炭化水素基とケイ素原子との数の
比が0.5〜1.5であることが好ましい。この比が
1.0を境にこれより低くなるに従いガラスの組成に近
く、加熱重量減少が少なく生成する樹脂は硬くなる傾向
があり、0.5未満では膜形成が困難である。また、こ
の比が1.0より高くなるに従いこれとは逆の傾向を示
し、オルガノポリシロキサンの場合は2.0でポリジオ
ルガノシロキサンとなるため、1.5を越えるとゴム的
要素が強くなり過ぎ、硬度が低下する。
Examples of the organosilicon-based polymer include organopolysiloxane, polysilalkylene siloxane, polysilarylene siloxane and the like. Further, the ratio of the number of the monovalent hydrocarbon group bonded to the silicon atom to the number of the silicon atom is preferably 0.5 to 1.5. As the ratio becomes lower at the boundary of 1.0, the composition becomes closer to the glass composition, the weight loss upon heating is small, and the generated resin tends to be hard. When the ratio is less than 0.5, it is difficult to form a film. Further, as the ratio becomes higher than 1.0, the opposite tendency is exhibited. In the case of organopolysiloxane, polydiorganosiloxane is obtained at 2.0, so if it exceeds 1.5, the rubber-like element becomes strong. Too much, the hardness decreases.

【0031】オルガノポリシロキサンとしては、下記式
(3)で示される構造単位を有するものが好ましい。
As the organopolysiloxane, those having a structural unit represented by the following formula (3) are preferable.

【0032】 R7 r SiO(4-r-s)/2 (OR8s (3) (R7 は直鎖状もしくは分岐状のアルキル基、アルケニ
ル基またはアリール基を示し、R8 は水素原子またはア
ルキル基を示し、r及びsはモル比を示す。)
R 7 r SiO (4-rs) / 2 (OR 8 ) s (3) (R 7 represents a linear or branched alkyl group, an alkenyl group or an aryl group, and R 8 represents a hydrogen atom or Represents an alkyl group, and r and s represent a molar ratio.)

【0033】前記式(3)において、R7 はケイ素原子
に結合した一価の炭化水素基であり、炭素数が1〜18
であることが好ましく、直鎖もしくは分岐のアルキル基
としては、例えばメチル基、エチル基、プロピル基、ブ
チル基、ペンチル基、ヘキシル基、2−エチルヘキシル
基、ドデシル基、オクタデシル基等が挙げられ、アルケ
ニル基としては例えばビニル基、アリル基等が挙げら
れ、アリール基としては例えばフェニル基、トリル基等
が挙げられ、更に、例えばトリフルオロプロピル基、ヘ
プタフルオロペンチル基、ノナフルオロヘキシル基等で
代表されるフロロ炭化水素基、クロロメチル基、クロロ
エチル基等のクロロ炭化水素基等、直鎖あるいは分岐の
飽和炭化水素基ハロゲン置換体が挙げられる。
In the above formula (3), R 7 is a monovalent hydrocarbon group bonded to a silicon atom and has 1 to 18 carbon atoms.
The linear or branched alkyl group is preferably a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a 2-ethylhexyl group, a dodecyl group, an octadecyl group, and the like. Examples of the alkenyl group include a vinyl group and an allyl group, and examples of the aryl group include a phenyl group and a tolyl group. Further, examples thereof include a trifluoropropyl group, a heptafluoropentyl group, and a nonafluorohexyl group. Fluorohydrocarbon groups, chloromethyl groups, chloroethyl groups, and other chlorohydrocarbon groups, and straight-chain or branched saturated hydrocarbon halogen substitutes.

【0034】R7 は必ずしも単一の種類である必要はな
く、樹脂特性の改良、溶媒に対する溶解性の改良等に応
じて適宜選択される。メチル基とフェニル基が混在する
系ではメチル基単独であるよりも一般に有機化合物との
親和性が向上することは周知の事実である。また、フロ
ロ炭化水素基を導入すると、オルガノポリシロキサンで
も一般高分子の場合と同様にフッ素原子の効果により表
面張力が減少し、そのため、はつ水・はつ油性等のオル
ガノポリシロキサンの特性が変化する。本発明において
も、より低い表面張力が求められる場合には、適宜、フ
ロロ炭化水素基と結合したケイ素単位を共重合して導入
することができる。
R 7 does not necessarily have to be a single type, and is appropriately selected depending on the improvement of resin characteristics, the solubility in a solvent, and the like. It is a well-known fact that in a system in which a methyl group and a phenyl group are mixed, affinity with an organic compound is generally improved as compared with a case where a methyl group is used alone. Further, when a fluorohydrocarbon group is introduced, the surface tension of the organopolysiloxane is reduced by the effect of the fluorine atom in the same manner as in the case of general polymers, and therefore the properties of the organopolysiloxane such as water repellent and oil repellent are improved. Change. Also in the present invention, when a lower surface tension is required, a silicon unit bonded to a fluorohydrocarbon group can be appropriately copolymerized and introduced.

【0035】なお、rはモル比を示し、平均0.5〜
1.5であることが好ましい。
In addition, r represents a molar ratio, and is 0.5 to 0.5 on average.
It is preferably 1.5.

【0036】前記式(3)においてケイ素原子に結合し
たOR8 基は、水酸基または加水分解縮合可能な基であ
る。R8 は水素、及びメチル基、エチル基、プロピル
基、ブチル基等の低級アルキル基から選択される。OR
8 基におけるR8 は水素からアルキル基の炭素数が多く
なるにつれて反応性が低下する特性を示し、使用される
反応系に応じて適宜選択される。加水分解縮合可能な基
の比率はsによって示されるが、0.01以上であるこ
とが好ましい。樹脂の硬度が架橋密度で調整されること
は周知であり、本発明においても前述のケイ素原子に結
合した加水分解縮合可能な基の数を制御することにより
可能となる。しかし、該加水分解縮合可能な基が多過ぎ
ると未反応で残存する可能性があり、使用環境中で加水
分解されるために表面特性等に悪影響を与え易い。好ま
しいsの値は0.01〜1.5である。
The OR 8 group bonded to the silicon atom in the above formula (3) is a hydroxyl group or a hydrolytically condensable group. R 8 is selected from hydrogen and lower alkyl groups such as methyl group, ethyl group, propyl group and butyl group. OR
R 8 in the 8 groups shows the property that the reactivity decreases as the number of carbon atoms in the alkyl group increases from hydrogen, and is appropriately selected according to the reaction system used. The ratio of the groups capable of being hydrolyzed and condensed is indicated by s, and is preferably 0.01 or more. It is well known that the hardness of the resin is adjusted by the crosslink density, and it is also possible in the present invention by controlling the number of the above-mentioned hydrolytically condensable groups bonded to the silicon atom. However, if there are too many hydrolytically condensable groups, there is a possibility that they may remain unreacted, and they will be hydrolyzed in the environment of use, so that the surface characteristics and the like are likely to be adversely affected. A preferred value of s is from 0.01 to 1.5.

【0037】有機ケイ素系高分子の一般的な特性の一つ
に有機化合物に対する親和性、溶解性が極めて悪いこと
がある。例えば、通常の有機樹脂で使用されている酸化
防止剤、紫外線吸引剤等はジメチルポリシロキサンに全
く溶解性を示さず、樹脂中で凝集する。一般に用いられ
る電荷輸送性化合物もその例外ではなく、電荷輸送の目
的に使用可能な濃度に溶解することは困難である。しか
し、本発明の前記式(1)で示される電荷輸送性化合物
と前記有機ケイ素系高分子、特にオルガノポリシロキサ
ンは、相溶性に優れ、機械的物性を大幅に改善すること
を可能にした。
One of the general characteristics of organosilicon polymers is that they have very poor affinity and solubility for organic compounds. For example, antioxidants, ultraviolet ray attractants and the like used in ordinary organic resins have no solubility in dimethylpolysiloxane and aggregate in the resin. The charge-transporting compounds that are commonly used are no exception, and it is difficult to dissolve them in a concentration that can be used for the purpose of charge-transporting. However, the charge-transporting compound represented by the formula (1) of the present invention and the organosilicon polymer, particularly the organopolysiloxane, are excellent in compatibility and it is possible to significantly improve mechanical properties.

【0038】前記有機ケイ素高分子は、硬化させる際に
架橋剤を加えて、これを介して架橋させることもでき
る。
The organosilicon polymer may be crosslinked by adding a crosslinking agent at the time of curing.

【0039】更に、架橋剤として下記式(4)で示され
るシラン化合物を用いることにより、硬化性組成物を硬
化して得られる表面保護層の硬度や強度等の物性の制御
が容易になる。
Further, by using a silane compound represented by the following formula (4) as the crosslinking agent, it becomes easy to control the physical properties such as hardness and strength of the surface protective layer obtained by curing the curable composition.

【0040】R9 a SiY4-a (4) (R9 は直鎖状もしくは分岐状のアルキル基、アルケニ
ル基またはフェニル基を示し、Yは加水分解性基を示
し、aはモル比を示す。)
R 9 a SiY 4-a (4) (R 9 represents a linear or branched alkyl group, alkenyl group or phenyl group, Y represents a hydrolyzable group, and a represents a molar ratio. .)

【0041】式(4)において、R8 は炭素数が1〜1
8であることが好ましく、例えば、メチル基、エチル
基、プロピル基、ブチル基、アミル基、ヘキシル基、ビ
ニル基、アリル基、フェニル基、トリル基等が挙げられ
る。Yで示される加水分解性基としては、水素原子、メ
トキシ基、エトキシ基、メチルエチルケトオキシム基、
ジエチルアミノ基、アセトキシ基、プロペノキシ基、プ
ロポキシ基、ブトキシ基等が挙げられる。
In the formula (4), R 8 has 1 to 1 carbon atoms.
It is preferably 8, and examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, an amyl group, a hexyl group, a vinyl group, an allyl group, a phenyl group and a tolyl group. Examples of the hydrolyzable group represented by Y include a hydrogen atom, a methoxy group, an ethoxy group, a methylethylketoxime group,
Examples thereof include a diethylamino group, an acetoxy group, a propenoxy group, a propoxy group and a butoxy group.

【0042】上記樹脂の架橋硬化には、必ずしも触媒が
必要ではないが、通常の有機ケイ素系高分子の硬化に用
いられる触媒の使用を妨げるものではなく、硬化に要す
る時間、硬化温度等を考慮してジブチル錫ジアセテー
ト、ジブチル錫ジラウレート、ジブチル錫オクトエート
等のアルキル錫有機酸塩等またはノルマルブチルチタネ
ート等の有機チタン酸エステルから適宜選択される。
A catalyst is not necessarily required for the cross-linking and curing of the above resin, but it does not hinder the use of a catalyst used for usual curing of organosilicon polymers, and the time required for curing, the curing temperature, etc. are taken into consideration. Then, it is appropriately selected from alkyltin organic acid salts such as dibutyltin diacetate, dibutyltin dilaurate and dibutyltin octoate, and organic titanate esters such as normal butyl titanate.

【0043】架橋剤としての式(4)で示されるシラン
化合物の具体例としては、例えば、メチルトリメトキシ
シラン、メチルトリエトキシシラン、ビニルトリメトキ
シシラン、フェニルトリエトキシシラン、これらのアル
コキシ基の代わりにアセトキシ基、メチルエチルケトオ
キシム基、ジエチルアミノ基、イソプロペノキシ基に置
換したシラン等が挙げられる。架橋剤はエチルポリシリ
ケートのようなオリゴマー状のものでもよい。
Specific examples of the silane compound represented by the formula (4) as a cross-linking agent include, for example, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, phenyltriethoxysilane, and a substitute for these alkoxy groups. Examples thereof include silane substituted with an acetoxy group, a methylethylketoxime group, a diethylamino group and an isopropenoxy group. The cross-linking agent may be in the form of an oligomer such as ethyl polysilicate.

【0044】本発明で使用する有機ケイ素系高分子の製
造方法としては、特公昭26−2696号公報、特公昭
28−6297号公報に記載されている方法を始めとし
て、Chemistry and Technolog
y of Silicones,Chapter5,
p.191〜(Walter No11,Academ
ic Press,Inc.1968)のオルガノポリ
シロキサン合成方法がある。例えば、ケイ素原子に対す
る一価の有機基の置換数rが平均0.5〜1.5である
オルガノアルコキシシラン、オルガノハロゲノシランを
有機溶媒中に溶解し、酸あるいは塩基存在下で加水分
解、縮合することによって重合し、その後溶媒を除去す
ることによって合成される。本発明で使用する有機ケイ
素系高分子はトルエン、キシレン等の芳香族炭化水素、
シクロヘキサノン、ヘキサン等の脂肪族炭化水素、及び
クロロホルム、クロロベンゼン等の含ハロゲン炭化水
素、エタノール、ブタノール等のアルコールなどの溶媒
中に溶解させて使用される。
Examples of the method for producing the organosilicon polymer used in the present invention include those described in Japanese Patent Publication No. 26-2696 and Japanese Patent Publication No. 28-6297, and Chemistry and Technology.
y of Silicones, Chapter5
p. 191- (Walter No11, Academ
ic Press, Inc. 1968) organopolysiloxane synthesis method. For example, an organoalkoxysilane or organohalogenosilane having an average number of substitutions r of a monovalent organic group with respect to a silicon atom of 0.5 to 1.5 is dissolved in an organic solvent, and hydrolysis and condensation are performed in the presence of an acid or a base. It is polymerized by removing the solvent and then synthesized. The organic silicon-based polymer used in the present invention is an aromatic hydrocarbon such as toluene or xylene,
It is used by dissolving it in a solvent such as an aliphatic hydrocarbon such as cyclohexanone and hexane, a halogen-containing hydrocarbon such as chloroform and chlorobenzene, an alcohol such as ethanol and butanol.

【0045】本発明においては、硬化性の有機ケイ素系
高分子と本発明の有機ケイ素変成正孔輸送性化合物の硬
化時に3次元架橋構造が形成されることにより、各元素
間の運動や外部からの化合物の侵入が困難になることか
ら、硬度や機械的強度が増大し、耐摩耗性が向上するの
みで、帯電時に発生するアーク放電等の電気的な障害や
化学物質等に対する耐久性も向上させることが可能とな
る。
In the present invention, a three-dimensional crosslinked structure is formed during the curing of the curable organosilicon polymer and the organosilicon-modified hole transporting compound of the present invention, so that the movement between the elements and the external Since it is difficult for the compound to enter, the hardness and mechanical strength increase, and the wear resistance is only improved, and the durability against electrical obstacles such as arc discharge generated during charging and chemical substances is also improved. It becomes possible.

【0046】前記有機ケイ素系高分子と有機ケイ素変成
正孔輸送性化合物を硬化する前の溶液(本発明の硬化性
組成物ともいう)は、例えば両者を溶解する溶媒中に混
合することで得られる。有機ケイ素系高分子の溶媒を除
いた固形分100重量部に対して有機ケイ素変成正孔輸
送性化合物は、好ましくは20〜200重量部混合して
用いられる。20重量部未満では正孔輸送性が不十分と
なるために帯電電位が増加して好ましくない。また、2
00重量部を越えると機械的強度が低下し、表面エネル
ギーが増加することから好ましくない。より好ましくは
有機ケイ素系高分子100重量部に対して有機ケイ素変
成正孔輸送性化合物は30〜150重量部が用いられ
る。
The solution (also referred to as the curable composition of the present invention) before curing the organosilicon polymer and the organosilicon-modified hole transporting compound is obtained, for example, by mixing them in a solvent that dissolves them. To be The organosilicon-modified hole transporting compound is preferably used in a mixture of 20 to 200 parts by weight with respect to 100 parts by weight of the solid content of the organosilicon polymer excluding the solvent. If the amount is less than 20 parts by weight, the hole transporting property becomes insufficient, so that the charging potential is undesirably increased. Also, 2
If it exceeds 100 parts by weight, the mechanical strength is lowered and the surface energy is increased, which is not preferable. More preferably, 30 to 150 parts by weight of the organosilicon-modified hole transporting compound is used with respect to 100 parts by weight of the organosilicon polymer.

【0047】本発明においては、前もって硬化性高分子
と有機ケイ素変成正孔輸送性化合物を部分的に反応させ
てもよい。この場合には感光体への塗布に支障のない溶
液または分散液であれば用いることができる。
In the present invention, the curable polymer may be partially reacted with the organosilicon-modified hole transporting compound in advance. In this case, any solution or dispersion that does not hinder the application to the photoreceptor can be used.

【0048】硬化の条件としては100〜200℃で加
熱することが好ましい。100℃に満たないと硬化反応
に時間がかかるため、未反応の加水分解性基が残存する
可能性もある。200℃を越えると正孔輸送性基が酸化
劣化し易くなり、悪影響が発生し易い。より好ましく
は、120〜160℃で加熱硬化して用いられる。
As a curing condition, heating at 100 to 200 ° C. is preferable. If the temperature is less than 100 ° C., the curing reaction takes a long time, and therefore unreacted hydrolyzable groups may remain. If the temperature exceeds 200 ° C., the hole transporting group is liable to be oxidized and deteriorated, and adverse effects are likely to occur. More preferably, it is used after being heated and cured at 120 to 160 ° C.

【0049】本発明の正孔輸送能を有する硬化性組成物
を用いて電子写真感光体を製造する例を下記に示す。
An example of producing an electrophotographic photosensitive member using the curable composition having a hole-transporting ability of the present invention is shown below.

【0050】電子写真感光体の支持体(図1及び図2中
の1)としては支持体自体が導電性を有するもの、例え
ば、アルミニウム、アルミニウム合金、銅、亜鉛、ステ
ンレス、クロム、チタン、ニッケル、マグネシウム、イ
ンジウム、金、白金、銀、鉄等を用いることができる。
その他にアルミニウム、酸化インジウム、酸化スズ、金
等を蒸着等によりプラスチック等の誘電体支持体に被膜
形成したものや、導電性微粒子をプラスチックや紙に混
合したもの等を用いることができる。これらの導電性支
持体は均一な導電性が求められるとともに平滑な表面が
重要である。表面の平滑性はその上層に形成される下引
き層、電荷発生層及び電荷輸送層の均一性に大きな影響
を与えることから、その表面粗さは0.3μm以下で用
いられることが好ましい。0.3μmを越える凹凸は下
引き層や電荷発生層のような薄い層に印加される局所電
場を大きく変化させてしまうためにその特性が大きく変
化してしまい、電荷注入や残留電位のむら等の欠陥を生
じ易いことから好ましくない。
As the support (1 in FIGS. 1 and 2) of the electrophotographic photosensitive member, the support itself has conductivity, for example, aluminum, aluminum alloy, copper, zinc, stainless steel, chromium, titanium, nickel. , Magnesium, indium, gold, platinum, silver, iron and the like can be used.
In addition, it is possible to use a material in which aluminum, indium oxide, tin oxide, gold, or the like is formed on a dielectric support such as plastic by vapor deposition, or conductive fine particles are mixed with plastic or paper. For these conductive supports, uniform conductivity is required and a smooth surface is important. Since the surface smoothness has a great influence on the uniformity of the undercoat layer, the charge generation layer and the charge transport layer formed thereon, the surface roughness is preferably 0.3 μm or less. The unevenness exceeding 0.3 μm causes a large change in the local electric field applied to a thin layer such as an undercoat layer or a charge generation layer, so that the characteristics of the unevenness greatly change, resulting in charge injection or uneven residual potential. It is not preferable because defects are likely to occur.

【0051】特に導電性微粒子をポリマーバインダー中
に分散して塗布することにより得られる導電層(図1及
び図2中の2)は形成が容易であり、均質な表面を形成
することに適している。このとき用いられる導電性微粒
子の1次粒径は100nm以下であり、より好ましくは
50nm以下である。導電性微粒子としては、導電性酸
化亜鉛、導電性酸化チタン、Al、Au、Cu、Ag、
Co、Ni、Fe、カーボンブラック、ITO、酸化ス
ズ、酸化インジウム、インジウム等が用いられ、これら
を絶縁性微粒子の表面にコーティングして用いてもよ
い。前記導電性微粒子の含有量は体積抵抗が十分に低く
なるように使用され、好ましくは1×1010Ω・cm以
下の抵抗となるように添加される。より好ましくは1×
108 Ω・cm以下で用いられる。
Particularly, the conductive layer (2 in FIGS. 1 and 2) obtained by dispersing and coating the conductive fine particles in the polymer binder is easy to form and is suitable for forming a uniform surface. There is. The primary particle diameter of the conductive fine particles used at this time is 100 nm or less, and more preferably 50 nm or less. As the conductive fine particles, conductive zinc oxide, conductive titanium oxide, Al, Au, Cu, Ag,
Co, Ni, Fe, carbon black, ITO, tin oxide, indium oxide, indium, etc. are used, and these may be used by coating the surface of the insulating fine particles. The content of the conductive fine particles is used so that the volume resistance is sufficiently low, and is preferably added so that the resistance is 1 × 10 10 Ω · cm or less. More preferably 1 ×
It is used at 10 8 Ω · cm or less.

【0052】レーザー等のコヒーレントな光源を用いて
露光する場合は干渉による画像劣化を防止するために、
上記導電性支持体の表面に凹凸を形成することも可能で
ある。このときは電荷注入や残留電位のむら等の欠陥が
生じにくいように、使用する波長の1/2λ程度の凹凸
を数μm以下の直径のシリカビーズ等の絶縁物を分散す
ることにより10μm以下の周期で形成して用いること
が可能である。
In order to prevent image deterioration due to interference when exposing using a coherent light source such as a laser,
It is also possible to form irregularities on the surface of the conductive support. At this time, in order to prevent defects such as charge injection and uneven residual potential from occurring, unevenness of about ½ λ of the wavelength used is dispersed with an insulating material such as silica beads having a diameter of several μm or less to obtain a period of 10 μm or less. Can be formed and used.

【0053】本発明においては、支持体と感光層の中間
に、注入阻止機能と接着機能をもつ下引き層(図1及び
図2中の3)を設けることもできる。下引き層の材料と
しては、カゼイン、ポリビニルアルコール、ニトロセル
ロース、エチレン−アクリル酸コポリマー、ポリビニル
ブチラール、フェノール樹脂、ポリアミド、ポリウレタ
ン、ゼラチン等が挙げられる。下引き層の膜厚は0.1
μm〜10μmであることが好ましく、特には0.3μ
m〜3μmであることが好ましい。
In the present invention, an undercoat layer (3 in FIGS. 1 and 2) having an injection blocking function and an adhesive function may be provided between the support and the photosensitive layer. Examples of the material of the undercoat layer include casein, polyvinyl alcohol, nitrocellulose, ethylene-acrylic acid copolymer, polyvinyl butyral, phenol resin, polyamide, polyurethane, gelatin and the like. The thickness of the undercoat layer is 0.1
μm to 10 μm is preferable, and particularly 0.3 μm
It is preferably m to 3 μm.

【0054】感光層としては、電荷発生物質を含有する
電荷発生層(図1及び図2中の4)と電荷輸送物質を含
有する電荷輸送層(図1及び図2中の5)からなる機能
分離タイプのものや電荷発生物質と電荷輸送物質を同一
の層に有する単層タイプ(不図示)が用いられる。
The photosensitive layer has a function consisting of a charge generating layer containing a charge generating substance (4 in FIGS. 1 and 2) and a charge transporting layer containing a charge transporting substance (5 in FIGS. 1 and 2). A separation type or a single layer type (not shown) having a charge generating substance and a charge transporting substance in the same layer is used.

【0055】電荷発生物質としては、例えば、セレン−
テルル、ピリリウム系染料、チオピリリウム系染料、フ
タロシアニン系顔料、アントアントロン系顔料、ジベン
ズピレンキノン系顔料、ピラントロン系顔料、トリスア
ゾ系顔料、ジスアゾ系顔料、アゾ系顔料、インジゴ系顔
料、キナクリドン系顔料、シアニン系顔料等を用いるこ
とができる。
As the charge generating substance, for example, selenium-
Tellurium, pyrylium dye, thiopyrylium dye, phthalocyanine pigment, anthanthrone pigment, dibenzpyrenequinone pigment, pyrantrone pigment, trisazo pigment, disazo pigment, azo pigment, indigo pigment, quinacridone pigment, A cyanine pigment or the like can be used.

【0056】本発明の正孔輸送能を有する硬化性組成物
の硬化物は、電荷輸送層(図1中の5)もしくは正孔輸
送能を有する表面保護層(図2中の6)として用いるこ
とが可能である。
The cured product of the curable composition having hole transporting ability of the present invention is used as a charge transporting layer (5 in FIG. 1) or a surface protective layer having hole transporting ability (6 in FIG. 2). It is possible.

【0057】単層感光体として用いる場合は前記電荷発
生物質と本発明の正孔輸送能を有する硬化性組成物と組
み合わせて用いることにより良好な特性が得られる。
When used as a single-layer photoconductor, good characteristics can be obtained by using the charge-generating substance in combination with the curable composition having a hole-transporting ability of the present invention.

【0058】本発明の正孔輸送能を有する硬化性組成物
は他の電荷輸送物質と組み合わせて用いることが可能で
あるが、かかる電荷輸送物質としては、ポリ−N−ビニ
ルカルバゾール、ポリスチリルアントラセン等の複素環
や縮合多環芳香族を有する高分子化合物や、ピラゾリ
ン、イミダゾール、オキサゾール、オキサジアゾール、
トリアゾール、カルバゾール等の複素環化合物、トリフ
ェニルメタン等のトリアリールアルカン誘導体、トリフ
ェニルアミン等のトリアリールアミン誘導体、フェニレ
ンジアミン誘導体、N−フェニルカルバゾール誘導体、
スチルベン誘導体、ヒドラゾン誘導体等の低分子化合物
を用いることができる。
The curable composition having a hole-transporting ability of the present invention can be used in combination with another charge-transporting substance. Examples of such a charge-transporting substance include poly-N-vinylcarbazole and polystyrylanthracene. A polymer compound having a heterocyclic ring or a condensed polycyclic aromatic compound such as pyrazoline, imidazole, oxazole, oxadiazole,
Heterocyclic compounds such as triazole and carbazole, triarylalkane derivatives such as triphenylmethane, triarylamine derivatives such as triphenylamine, phenylenediamine derivatives, N-phenylcarbazole derivatives,
Low molecular weight compounds such as stilbene derivatives and hydrazone derivatives can be used.

【0059】上記、電荷発生物質や電荷輸送物質は必要
に応じてバインダーポリマーが用いられる。バインダー
ポリマーの例としては、スチレン、酢酸ビニル、塩化ビ
ニル、アクリル酸エステル、メタクリル酸エステル、フ
ッ化ビニリデン、トリフルオロエチレン、等のビニル化
合物の重合体及び共重合体、ポリビニルアルコール、ポ
リビニルアセタール、ポリカーボネード、ポリエステ
ル、ポリスルホン、ポリフェニレンオキサイド、ポリウ
レタン、セルロース樹脂、フェノール樹脂、メラミン樹
脂、ケイ素樹脂、エポキシ樹脂等が挙げられる。
A binder polymer is used for the charge generating substance and the charge transporting substance, if necessary. Examples of the binder polymer include polymers and copolymers of vinyl compounds such as styrene, vinyl acetate, vinyl chloride, acrylic acid ester, methacrylic acid ester, vinylidene fluoride, trifluoroethylene, polyvinyl alcohol, polyvinyl acetal, and polycarbonate. , Polyester, polysulfone, polyphenylene oxide, polyurethane, cellulose resin, phenol resin, melamine resin, silicon resin, epoxy resin and the like.

【0060】本発明の正孔輸送能を有する硬化性組成物
には、前記化合物以外にも機械的特性の改良や耐久性向
上のために添加剤を用いることができる。このような添
加剤としては、酸化防止剤、紫外線吸収剤、安定化剤、
潤滑剤、導電性制御剤等が用いられる。
In addition to the above-mentioned compounds, additives may be added to the curable composition having a hole-transporting ability of the present invention in order to improve mechanical properties and durability. Such additives include antioxidants, ultraviolet absorbers, stabilizers,
Lubricants, conductivity control agents and the like are used.

【0061】本発明における電荷発生層の膜厚は3μm
以下であることが好ましく、特には0.01〜1μmで
あることが好ましい。また、電荷輸送層の膜厚は1〜4
0μmであることが好ましく、特には3〜30μmであ
ることが好ましい。
The thickness of the charge generation layer in the present invention is 3 μm.
It is preferable that it is below, and it is especially preferable that it is 0.01-1 micrometer. The charge transport layer has a thickness of 1 to 4.
It is preferably 0 μm, and particularly preferably 3 to 30 μm.

【0062】感光層が単層タイプである場合は、その膜
厚は1〜40μmであることが好ましく、特には3〜3
0μmであることが好ましい。
When the photosensitive layer is a single layer type, the thickness thereof is preferably 1 to 40 μm, and particularly 3 to 3
It is preferably 0 μm.

【0063】本発明における表面保護層の厚みは1〜1
5μmであることが好ましい。1μmに満たないと保護
効果が十分でなく、15μmを越えるとは感光層全体の
膜厚が増加することにより、画像劣化が生じて易くなっ
てしまうことから好ましくない。
The thickness of the surface protective layer in the present invention is 1 to 1
Preferably it is 5 μm. If it is less than 1 μm, the protective effect is not sufficient, and if it exceeds 15 μm, image deterioration is likely to occur due to an increase in the film thickness of the entire photosensitive layer, which is not preferable.

【0064】本発明においては、更に、露光手段が照射
する光のスポット面積と電子写真感光体が有する感光層
の厚さの積が2×104μm3以下であることが好まし
い。また、この積は現像コントラストの大きさ(現像時
の感光体上の電位差)の点で2×103μm3以上である
ことが好ましい。2×103μm3に満たないと十分な現
像コントラストは得にくくなる傾向になる。
In the present invention, the product of the spot area of the light irradiated by the exposing means and the thickness of the photosensitive layer of the electrophotographic photosensitive member is preferably 2 × 10 4 μm 3 or less. Further, this product is preferably 2 × 10 3 μm 3 or more in terms of the magnitude of development contrast (potential difference on the photoconductor at the time of development). If it is less than 2 × 10 3 μm 3 , it tends to be difficult to obtain a sufficient development contrast.

【0065】この場合、本発明に用いられる露光方法
は、光をドット状に照射することによって感光体上に静
電潜像を形成するものである。その光源は特に制限され
るものではないが、より小さなスポット面積をより容易
に得ることができるという点でレーザー光及びLED光
であることが好ましい。
In this case, the exposure method used in the present invention is to form an electrostatic latent image on the photosensitive member by irradiating light in a dot shape. The light source is not particularly limited, but is preferably laser light and LED light in that a smaller spot area can be more easily obtained.

【0066】図3に光の強度分布、スポット径及び光の
スポット面積(S)と感光層の厚さの積の関係を示す。
光スポットは一般的には図1に示すように主走査スポッ
ト径(ab)と副走査スポット径(cd)を有する楕円
形の形状を有しており、本発明におけるスポット面積と
感光層の厚さの積は、該光スポットが感光層へ照射され
ている部分の体積(V)であるといえる。
FIG. 3 shows the relationship between the light intensity distribution, the spot diameter, and the product of the light spot area (S) and the thickness of the photosensitive layer.
The light spot generally has an elliptical shape having a main scanning spot diameter (ab) and a sub-scanning spot diameter (cd) as shown in FIG. The product of the heights can be said to be the volume (V) of the portion where the light spot is irradiated on the photosensitive layer.

【0067】該光のスポット面積(S)は感光層上の面
積であり、光の強度がピーク強度(A)の1/e
2(B)以上である部分の面積で表わされる。用いられ
る光源としては半導体レーザーやLED等が挙げられ、
光強度分布についてもガウス分布やローレンツ分布等が
あるが、いずれの場合もピーク強度(A)の1/e
2(B)以上の強度の部分をスポット面積(S)とす
る。なお、スポット面積(S)は、感光体の位置にCC
Dカメラを設置することにより測定することができる。
The spot area (S) of the light is the area on the photosensitive layer, and the light intensity is 1 / e of the peak intensity (A).
2 (B) It is represented by the area of the part which is more than. Examples of the light source used include semiconductor lasers and LEDs,
There are Gaussian distributions and Lorentz distributions for the light intensity distribution, but in each case, 1 / e of the peak intensity (A)
2 A portion having an intensity higher than (B) is defined as a spot area (S). In addition, the spot area (S) is the position of the photoconductor at CC.
It can be measured by installing a D camera.

【0068】本発明における光のスポット面積は、4×
103μm2以下であることが好ましく、特には3×10
3μm2以下であることが好ましい。4×103μm2を越
えると隣接画素の光と重複し易くなり、階調再現性が不
安定となり易い。また、コストの点から1×103μm2
以上であることが好ましい。
The light spot area in the present invention is 4 ×
It is preferably 10 3 μm 2 or less, and particularly 3 × 10
It is preferably 3 μm 2 or less. When it exceeds 4 × 10 3 μm 2 , light of adjacent pixels is likely to overlap with each other, and gradation reproducibility is likely to be unstable. Also, in terms of cost, 1 × 10 3 μm 2
It is preferable that it is above.

【0069】上記観点からは、本発明における感光層の
厚さは12μm以下であることが好ましく、特には10
μm以下であることが好ましい。
From the above viewpoint, the thickness of the photosensitive layer in the present invention is preferably 12 μm or less, and particularly 10
It is preferably not more than μm.

【0070】本発明の電子写真感光体は、極めて優れた
機械的強度及び表面潤滑性を有しているので、このよう
な系に用いられる感光体としては非常に好ましい。
The electrophotographic photosensitive member of the present invention has extremely excellent mechanical strength and surface lubricity, and is therefore very preferable as a photosensitive member used in such a system.

【0071】図4に本発明のプロセスカートリッジを有
する画像形成装置の第1の例の概略構成を示す。
FIG. 4 shows a schematic configuration of a first example of an image forming apparatus having the process cartridge of the present invention.

【0072】図において、7はドラム状の本発明の電子
写真感光体であり、軸8を中心に矢印方向に所定の周速
度で回転駆動される。感光体7は、回転過程において、
一次帯電手段9によりその周面に正または負の所定電位
の均一帯電を受け、次いで、レーザービーム走査露光等
の像露光手段(不図示)からの画像露光光10を受け
る。こうして感光体7の周面に静電潜像が順次形成され
ていく。
In the figure, numeral 7 is a drum-shaped electrophotographic photosensitive member of the present invention, which is rotationally driven around a shaft 8 in the direction of the arrow at a predetermined peripheral speed. The photoconductor 7 rotates during the rotation process.
The peripheral surface of the primary charging means 9 is uniformly charged with a predetermined positive or negative potential, and then image exposure light 10 from an image exposure means (not shown) such as laser beam scanning exposure is received. Thus, an electrostatic latent image is sequentially formed on the peripheral surface of the photoconductor 7.

【0073】形成された静電潜像は、現像手段11によ
りトナー現像され、現像されたトナー現像像は、不図示
の給紙部から感光体7と転写手段12との間に感光体7
の回転と同期取りされて給紙された転写材13に、転写
手段12により順次転写されていく。
The formed electrostatic latent image is toner-developed by the developing means 11, and the developed toner-developed image is provided between the photoconductor 7 and the transfer means 12 from a paper feeding section (not shown).
Is sequentially transferred to the transfer material 13 which is fed in synchronism with the rotation of.

【0074】像転写を受けた転写材13は、感光体面か
ら分離されて像定着手段14へ導入されて像定着を受け
ることにより複写物(コピー)として装置外へプリント
アウトされる。
The transfer material 13 that has undergone the image transfer is separated from the surface of the photoconductor and is introduced into the image fixing means 14 to undergo the image fixing and printed out as a copy to the outside of the apparatus.

【0075】像転写後の感光体7の表面は、クリーニン
グ手段15によって転写残りトナーの除去を受けて清浄
面化され、更に前露光手段(不図示)からの前露光光1
6により除電処理された後、繰り返し像形成に使用され
る。なお、一次帯電手段9が帯電ローラー等を用いた接
触帯電手段である場合は、前露光は必ずしも必要ではな
い。
The surface of the photoconductor 7 after the image transfer is cleaned by the cleaning means 15 by removing the transfer residual toner, and the pre-exposure light 1 from the pre-exposure means (not shown).
It is used for repeated image formation after being neutralized by No. 6. When the primary charging unit 9 is a contact charging unit using a charging roller or the like, the pre-exposure is not necessarily required.

【0076】本発明においては、上述の電子写真感光体
7、一次帯電手段9、現像手段11及びクリーニング手
段15等の構成要素のうち、複数のものをプロセスカー
トリッジとして一体に結合して構成し、このプロセスカ
ートリッジを複写機やレーザービームプリンター等の画
像形成装置本体に対して着脱可能に構成してもよい。例
えば、一次帯電手段9、現像手段11及びクリーニング
手段15の少なくとも1つを感光体7と共に一体に支持
してカートリッジ化して、装置本体のレール18等の案
内手段を用いて装置本体に着脱可能なプロセスカートリ
ッジ17とすることができる。
In the present invention, among the constituent elements such as the electrophotographic photosensitive member 7, the primary charging means 9, the developing means 11 and the cleaning means 15 described above, a plurality of components are integrally combined to form a process cartridge, The process cartridge may be detachably attached to the main body of the image forming apparatus such as a copying machine or a laser beam printer. For example, at least one of the primary charging unit 9, the developing unit 11, and the cleaning unit 15 is integrally supported with the photoconductor 7 to form a cartridge, and the cartridge can be attached to and detached from the apparatus body by using a guide unit such as a rail 18 of the apparatus body. It may be the process cartridge 17.

【0077】図5に本発明の画像形成装置の第2の例で
あるカラー複写機の概略構成を示す。
FIG. 5 shows a schematic structure of a color copying machine which is a second example of the image forming apparatus of the present invention.

【0078】図において201はイメージスキャナ部で
あり、原稿を読み取り、デジタル信号処理を行う部分で
ある。また、202はプリンター部であり、イメージス
キャナ201に読み取られた原稿画像に対応した画像を
用紙にフルカラーでプリント出力する部分である。
In the figure, reference numeral 201 denotes an image scanner section, which is a section for reading a document and performing digital signal processing. Reference numeral 202 denotes a printer unit which prints out an image corresponding to the document image read by the image scanner 201 on a sheet in full color.

【0079】イメージスキャナ部201において、20
0は鏡面厚板であり、原稿台ガラス203上の原稿20
4は、赤外カットフィルター208を通ったハロゲンラ
ンプ205の光で照射され、原稿からの反射光はミラー
206及び207に導かれ、レンズ209により3ライ
ンセンサ(CCD)210上に像を結び、フルカラー情
報レッド(R)、グリーン(G)、ブルー(B)成分と
して信号処理部211に送られる。なお、205及び2
06は速度vで、207は1/2vでラインセンサの電
気的走査方向(主走査方向)に対して垂直方向に(副走
査方向)に機械的に動くことにより、原稿全面を走査す
る。
In the image scanner unit 201, 20
Reference numeral 0 denotes a mirror-thick plate, which is the original document 20 on the platen glass 203.
4 is irradiated with the light of the halogen lamp 205 that has passed through the infrared cut filter 208, the reflected light from the original is guided to the mirrors 206 and 207, and an image is formed on the 3-line sensor (CCD) 210 by the lens 209. The full-color information is sent to the signal processing unit 211 as red (R), green (G), and blue (B) components. Note that 205 and 2
06 is a velocity v, and 207 is a 1/2 v, which mechanically moves in a direction (sub-scanning direction) perpendicular to the electrical scanning direction (main scanning direction) of the line sensor to scan the entire surface of the document.

【0080】信号処理部211では読み取られた信号を
電気的に処理し、マゼンタ(M)、シアン(C)、イエ
ロー(Y)及びブラック(BK)の各成分に分解し、プ
リンター部202に送る。また、イメージスキャナ部2
01における一回の原稿走査につき、M、C、Y及びB
Kの内、一つの成分がプリンター202に送られ、計4
回の原稿走査により一回のプリントアウトが完成する。
The signal processing unit 211 electrically processes the read signal, decomposes it into magenta (M), cyan (C), yellow (Y) and black (BK) components, and sends them to the printer unit 202. . Also, the image scanner unit 2
01, M, C, Y and B per scan of original
One component of K is sent to the printer 202, and a total of 4
One printout is completed by scanning the document once.

【0081】イメージスキャナ部201より送られてく
るM、C、Y及びBKの画像信号は、レーザードライバ
212に送られる。レーザードライバ212は画像信号
に応じ、半導体レーザー213を変調駆動する。レーザ
ー光はポリゴンミラー214、f−θレンズ215及び
ミラー216を介し、感光体217上を走査する。
The M, C, Y and BK image signals sent from the image scanner unit 201 are sent to the laser driver 212. The laser driver 212 modulates and drives the semiconductor laser 213 according to the image signal. The laser light scans the photoconductor 217 via the polygon mirror 214, the f-θ lens 215, and the mirror 216.

【0082】218は回転現像器であり、マゼンタ現像
器219、シアン現像器220、イエロー現像器221
及びブラック現像器222より構成され、4つの現像器
が交互に感光体に接し、感光体217上に形成された
M、C、Y及びBKの静電潜像を対応するトナーで現像
する。
Reference numeral 218 denotes a rotary developing device, which includes a magenta developing device 219, a cyan developing device 220, and a yellow developing device 221.
And a black developing device 222. The four developing devices alternately contact the photoconductor and develop the electrostatic latent images of M, C, Y and BK formed on the photoconductor 217 with the corresponding toners.

【0083】223は転写ドラムで、用紙カセット22
4または225より給紙された用紙をこの転写ドラム2
23に巻き付け、感光体217上に現像されたトナー像
を用紙に転写する。
Reference numeral 223 denotes a transfer drum, which is the paper cassette 22.
4 or 225 to the transfer drum 2
23, and the toner image developed on the photoconductor 217 is transferred onto a sheet.

【0084】このようにしてM、C、Y及びBKの4色
が順次転写された後に、用紙は定着ユニット226を通
過して排紙される。
After the four colors of M, C, Y and BK have been sequentially transferred in this manner, the paper passes through the fixing unit 226 and is discharged.

【0085】次に本発明に用いられる硬化性有機ケイ素
高分子の合成例を示す。
Next, a synthesis example of the curable organosilicon polymer used in the present invention will be shown.

【0086】[0086]

【実施例】【Example】

〔合成例1〕 メチルポリシロキサン樹脂を主成分とする硬化性樹脂溶
液の調製 メチルシロキサン単位80モル%、ジメチルシロキサン
単位20モル%からなる1重量%のシラノール基を含む
メチルポリシロキサン樹脂10gをトルエン10gに溶
解し、これにメチルトリメトキシシラン5.3g、ジブ
チル錫ジアセテート0.2gを加え、均一な溶液にし
た。
[Synthesis Example 1] Preparation of curable resin solution containing methyl polysiloxane resin as a main component 10 g of methyl polysiloxane resin containing 1% by weight of silanol group consisting of 80 mol% of methyl siloxane unit and 20 mol% of dimethyl siloxane unit in toluene It was dissolved in 10 g, and 5.3 g of methyltrimethoxysilane and 0.2 g of dibutyltin diacetate were added thereto to make a uniform solution.

【0087】〔合成例2〕 メチルポリシロキサン樹脂を主成分とする硬化性樹脂溶
液の調製 メチルシロキサン単位80モル%、ジメチルシロキサン
単位20モル%からなる1重量%のシラノール基を含む
メチルポリシロキサン樹脂10gをトルエン10gに溶
解し、これに、メチルトリ(メチルエチルケトキシム)
シラン11.5g、ジブチル錫ジアセテート0.2gを
加え均一な溶液にした。
[Synthesis Example 2] Preparation of curable resin solution containing methylpolysiloxane resin as a main component 1% by weight of silanol group-containing methylpolysiloxane resin consisting of 80% by mole of methylsiloxane unit and 20% by mole of dimethylsiloxane unit 10 g of toluene was dissolved in 10 g of toluene, and methyltri (methylethylketoxime) was added to the solution.
11.5 g of silane and 0.2 g of dibutyltin diacetate were added to make a uniform solution.

【0088】〔合成例3〕 メチルフェニルポリシロキサン樹脂を主成分とする硬化
性樹脂溶液の調製 フェニルシロキサン単位40モル%、ジフェニルシロキ
サン単位20モル%、メチルシロキサン単位20モル
%、ジメチルシロキサン単位20モル%からなる1重量
%のシラノール基を含むメチルフェニルポリシロキサン
樹脂12gをトルエン10gに溶解しジブチル錫ジアセ
テート0.2gを加え均一な溶液にした。
[Synthesis Example 3] Preparation of curable resin solution containing methylphenylpolysiloxane resin as a main component 40 mol% of phenylsiloxane units, 20 mol% of diphenylsiloxane units, 20 mol% of methylsiloxane units, 20 mol of dimethylsiloxane units % Of 1% by weight of silanol group-containing methylphenylpolysiloxane resin was dissolved in 10 g of toluene, and 0.2 g of dibutyltin diacetate was added to form a uniform solution.

【0089】〔合成例4〕 フルオロシリコーン樹脂を主成分とする硬化性樹脂溶液
の調製 メチルシロキサン単位50モル%、ジメチルシロキサン
単位10モル%、3,3,4,4,5,5,6,6,6
−ノナフルオロヘキシルシロキサン単位10モル%から
なる1重量%のシラノール基を含むメチルノナフルオロ
ヘキシルポリシロキサン樹脂10gをトルエン10gに
溶解し、これに、ジブチル錫ジアセテート0.2gを加
え均一な溶液にした。
[Synthesis Example 4] Preparation of curable resin solution containing fluorosilicone resin as main component 50 mol% of methyl siloxane unit, 10 mol% of dimethyl siloxane unit, 3,3,4,4,5,5,6,6 6,6
10 g of a methylnonafluorohexylpolysiloxane resin containing 1% by weight of silanol groups consisting of 10 mol% of nonafluorohexylsiloxane units was dissolved in 10 g of toluene, and 0.2 g of dibutyltin diacetate was added thereto to form a uniform solution. did.

【0090】次に、本発明に用いられる有機ケイ素変成
正孔輸送性化合物の合成例を示す。
Next, a synthesis example of the organosilicon-modified hole-transporting compound used in the present invention will be shown.

【0091】〔合成例5〕 4−〔2−(トリエトキシシリル)エチル〕トリフェニ
ルアミンの合成 〈4−(N,N−ジフェニルアミノ)ベンズアルデヒド
の合成〉三つ口フラスコにトリフェニルアミン101.
4gとDMF35.5mlを入れ、氷水冷却下、撹拌し
ながらオキシ塩化リン84.4mlを滴下し、温度を9
5℃に上げて5時間反応させた。反応液を4リットルの
温水へ注ぎ1時間撹拌した。その後、沈澱物を瀘取し、
エタノール/水(1:1)の混合溶液で洗浄し、4−
(N,N−ジフェニルアミノ)ベンズアルデヒドを得
た。収量91.5g(収率81.0%)。
[Synthesis Example 5] Synthesis of 4- [2- (triethoxysilyl) ethyl] triphenylamine <Synthesis of 4- (N, N-diphenylamino) benzaldehyde> Triphenylamine 101.
4 g and 35.5 ml of DMF were added, and 84.4 ml of phosphorus oxychloride was added dropwise with stirring under ice-water cooling.
The mixture was heated to 5 ° C. and reacted for 5 hours. The reaction solution was poured into 4 liters of warm water and stirred for 1 hour. After that, the precipitate is filtered off,
After washing with a mixed solution of ethanol / water (1: 1),
(N, N-diphenylamino) benzaldehyde was obtained. Yield 91.5 g (81.0% yield).

【0092】〈4−ビニルトリフェニルアミンの合成〉
水素化ナトリウム14.6g、1,2−ジメトキシエタ
ン700mlを三つ口フラスコに取り、室温で撹拌しな
がらトリメチルホスフォニウムブロマイド130.8g
を加えた。次に、無水エタノールを一滴加えた後、70
℃で4時間反応させた。これに4−(N,N−ジフェニ
ルアミノ)ベンズアルデヒド100gを加え、70℃に
温度を上げ5時間反応させた。反応液を瀘過し、瀘液と
沈澱物のエーテル抽出液を一緒にし水洗した。次いで、
エーテル液を塩化カルシウムで脱水後、エーテルを除去
し、反応混合物を得た。これをエタノールから再結晶を
行い、針状、淡黄色のビニルトリフェニルアミンを得
た。収量83.4g(収率84.0%)。
<Synthesis of 4-vinyltriphenylamine>
Sodium hydride (14.6 g) and 1,2-dimethoxyethane (700 ml) were placed in a three-necked flask, and trimethylphosphonium bromide (130.8 g) was stirred at room temperature.
Was added. Then, after adding one drop of absolute ethanol, 70
The reaction was performed at 4 ° C. for 4 hours. 4- (N, N-diphenylamino) benzaldehyde 100g was added to this, the temperature was raised to 70 degreeC, and it was made to react for 5 hours. The reaction solution was filtered, and the filtrate and the ether extract of the precipitate were combined and washed with water. Then
After dehydrating the ether solution with calcium chloride, the ether was removed to obtain a reaction mixture. This was recrystallized from ethanol to obtain acicular, pale yellow vinyltriphenylamine. Yield 83.4 g (84.0% yield).

【0093】〈4−ビニルトリフェニルアミンのヒドロ
シリル化〉トルエン40ml、トリエトキシシラン9.
9g(60mmol)及びトリス(テトラメチルジビニ
ルジシロキサン)二白金(0)のトルエン溶液0.01
8mmolを三つ口フラスコに取り、室温で撹拌しなが
ら4−ビニルトリフェニルアミン8.2gのトルエン溶
液20mlを滴下した。滴下終了後、70℃で3時間撹
拌を行った後、溶媒を減圧下で除き、淡黄色油状の4−
〔2−トリエトキシシリル)エチル〕トリフェニルアミ
ンを得た。収量12.1g(収率91.7%)。
<Hydrosilylation of 4-vinyltriphenylamine> Toluene 40 ml, triethoxysilane 9.
9 g (60 mmol) and 0.01 solution of tris (tetramethyldivinyldisiloxane) diplatinum (0) in toluene
8 mmol was placed in a three-necked flask, and 20 ml of a toluene solution of 8.2 g of 4-vinyltriphenylamine was added dropwise with stirring at room temperature. After completion of the dropwise addition, the mixture was stirred at 70 ° C. for 3 hours, and then the solvent was removed under reduced pressure.
[2-Triethoxysilyl) ethyl] triphenylamine was obtained. Yield 12.1 g (91.7% yield).

【0094】H−NMRスペクトルを図6に示す(ブル
カー社製、APC300 NMRスペクトロメータ)。
この化合物のイオン化ポテンシャルを大気下光電子分析
法(理研計器製、表面分析装置AC−1)にて測定した
ところ、5.68eVであった。
The H-NMR spectrum is shown in FIG. 6 (APC300 NMR spectrometer manufactured by Bruker).
The ionization potential of this compound was 5.68 eV when measured by a photoelectron analysis method (manufactured by Riken Keiki, surface analyzer AC-1) in the atmosphere.

【0095】この化合物を銅基板上にワイヤーバーコー
ト法により塗布し、120℃にて12時間熱硬化し、約
8μmの膜を作成した。次に、蒸着により半透明金電極
を形成した。
This compound was applied on a copper substrate by the wire bar coating method and heat-cured at 120 ° C. for 12 hours to form a film of about 8 μm. Next, a translucent gold electrode was formed by vapor deposition.

【0096】このサンプルに対してパルス巾3nsec
の波長337nmの窒素レーザーを用いてTime−o
f−flight法にてドリフト移動度を測定したとこ
ろ1×10-7cm2/Vsecであった。
Pulse width 3 nsec for this sample
-O using a nitrogen laser with a wavelength of 337 nm
When the drift mobility was measured by the f-flight method, it was 1 × 10 −7 cm 2 / Vsec.

【0097】〔合成例6〕 4−〔2−(メチルジエトキシシリル)エチル〕トリフ
ェニルアミンの合成 〈4−ビニルトリフェニルアミンのヒドロシリル化〉ト
ルエン40ml、メチルジエトキシシラン8.1g及び
トリス(テトラメチルジビニルジシロキサン)二白金
(0)のトルエン溶液0.018mmolを三つ口フラ
スコに取り、室温で撹拌しながら4−ビニルトリフェニ
ルアミン8.2gトルエン溶液20mlを滴下した。滴
下終了後、70℃で3時間撹拌した後、溶媒を減圧下除
去し、淡黄色油状の4−〔2−(メチルジエトキシシリ
ル)エチル〕トリフェニルアミンを得た。収量11.2
g(収率91.4%)。
[Synthesis Example 6] Synthesis of 4- [2- (methyldiethoxysilyl) ethyl] triphenylamine <Hydrosilylation of 4-vinyltriphenylamine> 40 ml of toluene, 8.1 g of methyldiethoxysilane and tris ( 0.018 mmol of a toluene solution of tetramethyldivinyldisiloxane) diplatinum (0) was placed in a three-necked flask, and 20 ml of a toluene solution of 4-vinyltriphenylamine (8.2 g) was added dropwise with stirring at room temperature. After completion of dropping, the mixture was stirred at 70 ° C. for 3 hours, and then the solvent was removed under reduced pressure to obtain pale yellow oily 4- [2- (methyldiethoxysilyl) ethyl] triphenylamine. Yield 11.2
g (yield 91.4%).

【0098】この化合物のイオン化ポテンシャルを大気
下光電子分析法(理研計器製、表面分析装置AC−1)
にて測定したところ、5.66eVであった。
The ionization potential of this compound was measured by a photoelectron analysis method under atmospheric conditions (manufactured by Riken Keiki, surface analyzer AC-1).
Was 5.66 eV.

【0099】この化合物を銅基板上にワイヤーバーコー
ド法により塗布し、120℃にて12時間熱硬化し、約
5μmの膜を作成した。次に、蒸着により半透明金電極
を形成した。
This compound was applied on a copper substrate by the wire bar code method and heat-cured at 120 ° C. for 12 hours to form a film of about 5 μm. Next, a translucent gold electrode was formed by vapor deposition.

【0100】このサンプルに対してパルス巾3nsec
の波長337nmの窒素レーザーを用いてTime−o
f−flight法にてドリフト移動度を測定したとこ
ろ1.2×10-7cm2/Vsecであった。
Pulse width 3 nsec for this sample
-O using a nitrogen laser with a wavelength of 337 nm
When the drift mobility was measured by the f-light method, it was 1.2 × 10 −7 cm 2 / Vsec.

【0101】〔合成例7〕 4,4′,4″−トリス〔2−(トリエトキシシリル)
エチル〕トリフェニルアミンの合成 〈トリ(4−ホルミルフェニル)アミンの合成〉三つ口
フラスコにトリフェニルアミン50.7gとDMF5
3.3mlを入れ、氷水冷却下、撹拌しながらオキシ塩
化リン126.6mlを滴下した。滴下終了後、混合溶
液を95℃で5時間反応させ、5リットルの温水へ注ぎ
1時撹拌した。その後、沈澱物を瀘取し、エタノール/
水(1:1)の混合溶液で洗浄し、トリ(4−ホルミル
フェニル)アミンを得た。収量65.3g(収率95.
9%)。
Synthesis Example 7 4,4 ′, 4 ″ -Tris [2- (triethoxysilyl)
Synthesis of ethyl] triphenylamine <Synthesis of tri (4-formylphenyl) amine> In a three-necked flask, 50.7 g of triphenylamine and DMF5 were added.
3.3 ml was added, and 126.6 ml of phosphorus oxychloride was added dropwise with stirring under cooling with ice water. After completion of dropping, the mixed solution was reacted at 95 ° C. for 5 hours, poured into 5 liters of warm water, and stirred for 1 hour. After that, the precipitate is filtered and ethanol /
It was washed with a mixed solution of water (1: 1) to obtain tri (4-formylphenyl) amine. Yield 65.3 g (yield 95.
9%).

【0102】〈トリ(4−ビニルフェニル)アミンの合
成〉水素化ナトリウム14.6g、1,2−ジメトキシ
エタン70mlを三つ口フラスコに取り、室温で撹拌し
ながらトリメチルホスフォニウムブロマイド130.8
gを加えた。次に、無水エタノールを一滴加えた後、7
0℃で4時間反応させた。以上のようにして得られた反
応混合液にトリ(4−ホルミルフェニル)アミン40.
2gを加え、70℃で5時間反応させた後、瀘別し、瀘
取したケーキをエーテル抽出し瀘液と一緒にした後、水
洗した。次いで、エーテル液を塩化カルシウムで脱水
後、エーテルを除去し、反応混合物を得た。これをエタ
ノールで再結晶二回行い、針状、淡黄色のトリ(4−ビ
ニルフェニル)アミンを得た。収量38.4g(収率9
7.3%)。
<Synthesis of tri (4-vinylphenyl) amine> Sodium hydride (14.6 g) and 1,2-dimethoxyethane (70 ml) were placed in a three-necked flask, and trimethylphosphonium bromide (130.8) was stirred at room temperature.
g was added. Next, after adding a drop of absolute ethanol, 7
The reaction was carried out at 0 ° C for 4 hours. The reaction mixture obtained as described above was added with tri (4-formylphenyl) amine 40.
After adding 2 g and reacting at 70 ° C. for 5 hours, the mixture was filtered, and the filtered cake was extracted with ether, combined with the filtered solution, and washed with water. Next, the ether solution was dehydrated with calcium chloride, and the ether was removed to obtain a reaction mixture. This was recrystallized twice with ethanol to obtain needle-shaped, pale yellow tri (4-vinylphenyl) amine. Yield 38.4 g (Yield 9
7.3%).

【0103】〈トリ(4−ビニルフェニル)アミンのヒ
ドロシリル化〉トルエン40ml、トリエトキシシラン
9.9g(60mmol)及びトリス(テトラメチルジ
ビニルジシロキサン)二白金(0)のトルエン溶液0.
018mmolを三つ口フラスコに取り、室温で撹拌し
ながらトリ(4−ビニルフェニル)アミン3.3g(1
3mmol)のトルエン溶液20mlを滴下した。滴下
終了後、70℃で3時間撹拌を行った後、溶媒を減圧下
で除去し、淡黄色油状の4,4′,4″−〔2−(トリ
エトキシシリル)エチル〕トリフェニルアミンを得た。
収量7.8g(収率80.6%)。
<Hydrosilylation of tri (4-vinylphenyl) amine> 40 ml of toluene, 9.9 g (60 mmol) of triethoxysilane and tris (tetramethyldivinyldisiloxane) diplatinum (0) in toluene solution of 0.
018 mmol was placed in a three-necked flask, and tri (4-vinylphenyl) amine 3.3 g (1
20 ml of a 3 mmol) toluene solution was added dropwise. After completion of dropping, the mixture was stirred at 70 ° C. for 3 hours, and then the solvent was removed under reduced pressure to obtain pale yellow oily 4,4 ′, 4 ″-[2- (triethoxysilyl) ethyl] triphenylamine. It was
Yield 7.8 g (80.6% yield).

【0104】この化合物のイオン化ポテンシャルを大気
下光電子分析法(理研計器製、表面分析装置AC−1)
にて測定したところ、5.65eVであった。
The ionization potential of this compound was measured by a photoelectron analysis method under atmospheric conditions (manufactured by Riken Keiki, surface analyzer AC-1).
Was 5.65 eV.

【0105】この化合物を銅基板にワイヤーバーコード
法により塗布し、120℃にて12時間熱硬化し、約5
μmの膜を作成した。次に、蒸着により半透明金電極を
形成した。
This compound was applied to a copper substrate by the wire bar code method and heat-cured at 120 ° C. for 12 hours to give about 5
A μm film was prepared. Next, a translucent gold electrode was formed by vapor deposition.

【0106】このサンプルに対してパルス巾3nsec
の波長337nmの窒素レーザーを用いてTime−o
f−flight法にてドリフト移動度を測定したとこ
ろ3×10-7cm2/Vsecであった。
Pulse width 3 nsec for this sample
-O using a nitrogen laser with a wavelength of 337 nm
The drift mobility measured by the f-flight method was 3 × 10 −7 cm 2 / Vsec.

【0107】〔合成例8〕 4−〔N,N−ビス(3,4−ジメチルフェニル)アミ
ノ〕−〔2−(トリエトキシシリル)エチル〕ベンゼン
の合成 〈N,N−ビス(3,4−ジメチルフェニル)アミノベ
ンゼンの合成〉4−ヨード−o−キシレン38.5g
(166mmol)、無水炭酸カリウム22.9g(1
66mmol)及び銅粉7.0gをニトロベンゼン20
mlに加え、撹拌下加熱還流を8時間行った。冷却後瀘
過し、沈澱を除去した。得られた反応混合物をシリカゲ
ルカラムを通しN,N−ビス(3,4−ジメチルフェニ
ル)アミノベンゼンを得た。収量15.7g(収率69
%)。
[Synthesis Example 8] Synthesis of 4- [N, N-bis (3,4-dimethylphenyl) amino]-[2- (triethoxysilyl) ethyl] benzene <N, N-bis (3,4) -Synthesis of dimethylphenyl) aminobenzene> 4-iodo-o-xylene 38.5 g
(166 mmol), 22.9 g of anhydrous potassium carbonate (1
66 mmol) and 7.0 g of copper powder in nitrobenzene 20
The mixture was added to ml and heated under reflux with stirring for 8 hours. After cooling, it was filtered and the precipitate was removed. The obtained reaction mixture was passed through a silica gel column to obtain N, N-bis (3,4-dimethylphenyl) aminobenzene. Yield 15.7 g (yield 69
%).

【0108】〈4−〔N,N−ビス(3,4−ジメチル
フェニル)アミノ〕ベンズアルデヒドの合成〉三つ口フ
ラスコに〔N,N−ビス(3,4−ジメチルフェニル)
アミノ〕ベンゼン124.6gとDMF35.5mlを
入れ、氷水冷却下、撹拌しながらオキシ塩化リン84.
4mlを滴下した。滴下終了後、混合溶液を95℃で5
時間反応させ、4リットルの温水へ注ぎ1時間撹拌し
た。その後、沈澱物を瀘取し、エタノール/水(1:
1)の混合溶液で洗浄し、4−〔N,N−ビス(3,4
−ジメチルフェニル)アミノ〕ベンズアルデヒドを得
た。収量107.6g(収率79.0%)。
<Synthesis of 4- [N, N-bis (3,4-dimethylphenyl) amino] benzaldehyde> [N, N-bis (3,4-dimethylphenyl)] was added to a three-necked flask.
Amino] benzene 124.6 g and DMF 35.5 ml were put, and phosphorus oxychloride 84.
4 ml was added dropwise. After the dropping is completed, the mixed solution is heated at 95 ° C for 5 hours.
The mixture was allowed to react for 4 hours, poured into 4 liters of warm water, and stirred for 1 hour. Then, the precipitate was filtered off and ethanol / water (1:
It was washed with the mixed solution of 1), and 4- [N, N-bis (3,4
-Dimethylphenyl) amino] benzaldehyde was obtained. Yield 107.6 g (79.0% yield).

【0109】〈4−〔N,N−ビス(3,4−ジメチル
フェニル)アミノ〕スチレンの合成〉水素化ナトリウム
12.1g、1,2−ジメトキシエタン580mlを三
つ口フラスコに取り、室温で撹拌しながらトリメチルホ
スフォニウムブロマイド108.5gを加えた。次に無
水エタノールを一滴加えた後、70℃で4時間反応させ
た。以上のようにして得られた反応混合液に4−〔N,
N−ビス(3,4−ジメチルフェニル)アミノ〕ベンズ
アルデヒド100.0gを加え、70℃で5時間反応さ
せた後、瀘別し、瀘取したケーキをエーテル抽出し瀘液
と一緒にし水洗した。次いで、エーテル液を塩化カルシ
ウムで脱水後、エーテルを除去し、反応混合物を得た。
これをエタノールで再結晶二回行い、針状、4−〔N,
N−ビス(3,4−ジメチルフェニル)アミノ〕スチレ
ンを得た。収量84.5g(収率85.0%)。
<Synthesis of 4- [N, N-bis (3,4-dimethylphenyl) amino] styrene> 12.1 g of sodium hydride and 580 ml of 1,2-dimethoxyethane were placed in a three-necked flask and kept at room temperature. 108.5 g of trimethylphosphonium bromide was added with stirring. Next, one drop of absolute ethanol was added, and the mixture was reacted at 70 ° C. for 4 hours. 4- [N,
After 100.0 g of N-bis (3,4-dimethylphenyl) amino] benzaldehyde was added and the mixture was reacted at 70 ° C. for 5 hours, it was filtered, and the filtered cake was extracted with ether, combined with the filtered solution, and washed with water. Next, the ether solution was dehydrated with calcium chloride, and the ether was removed to obtain a reaction mixture.
This was recrystallized twice with ethanol, and needle-shaped, 4- [N,
N-bis (3,4-dimethylphenyl) amino] styrene was obtained. The yield was 84.5 g (85.0% yield).

【0110】〈4−〔N,N−ビス(3,4−ジメチル
フェニル)アミノ〕スチレンのヒドロシリル化〉トルエ
ン40ml、トリエトキシシラン6.0g及びトリス
(テトラメチルジビニルジシロキサン)二白金(0)の
トルエン溶液0.54mmolを三つ口フラスコに取
り、室温で撹拌しながら4−〔N,N−ビス(3,4−
ジメチルフェニル)アミノ〕スチレン9.9gのトルエ
ン溶液20mlを滴下した。滴下終了後、70℃で3時
間撹拌を行った後、溶媒を減圧下で除去し、淡黄色油状
の4−〔N,N−ビス(3,4−ジメチルフェニル)ア
ミノ〕−〔2−(トリエトキシシリル)エチル〕ベンゼ
ンを得た。収量13.4g(収率90.1%)。
<Hydrosilylation of 4- [N, N-bis (3,4-dimethylphenyl) amino] styrene> Toluene 40 ml, triethoxysilane 6.0 g and tris (tetramethyldivinyldisiloxane) diplatinum (0) 0.54 mmol of a toluene solution of 4 [N, N-bis (3,4-
20 ml of a toluene solution of 9.9 g of dimethylphenyl) amino] styrene was added dropwise. After completion of dropping, the mixture was stirred at 70 ° C. for 3 hours, the solvent was removed under reduced pressure, and a pale yellow oily 4- [N, N-bis (3,4-dimethylphenyl) amino]-[2- ( Triethoxysilyl) ethyl] benzene was obtained. Yield 13.4 g (90.1% yield).

【0111】H−NMRスペクトルを図7に示す。(ブ
ルカー社製、APC300 NMRスペクトロメータ)
C−NMRスペクトルを図8に示す。(ブルカー社製、
APC300 NMRスペクトロメータ)この化合物の
イオン化ポテンシャルを大気下光電子分析法(理研計器
製、表面分析装置AC−1)にて測定したところ、5.
26eVであった。
The H-NMR spectrum is shown in FIG. (APC300 NMR spectrometer manufactured by Bruker)
The C-NMR spectrum is shown in FIG. (Made by Bruker,
APC300 NMR spectrometer) The ionization potential of this compound was measured by a photoelectron analysis method (manufactured by Riken Keiki, surface analyzer AC-1) in the atmosphere.
It was 26 eV.

【0112】この化合物を銅基板上にワイヤーバーコー
ト法により塗布し、120℃にて12時間熱硬化し、約
5μmの膜を作成した。次に、蒸着により半透明金電極
を形成した。
This compound was applied on a copper substrate by the wire bar coating method and heat-cured at 120 ° C. for 12 hours to form a film of about 5 μm. Next, a translucent gold electrode was formed by vapor deposition.

【0113】このサンプルに対してパルス巾3nsec
の波長337nmの窒素レーザーを用いてTime−o
f−flight法にてドリフト移動度を測定したとこ
ろ9×10-7cm2/Vsecであった。
Pulse width 3 nsec for this sample
-O using a nitrogen laser with a wavelength of 337 nm
When the drift mobility was measured by the f-light method, it was 9 × 10 −7 cm 2 / Vsec.

【0114】〔合成例9〕 4−〔N,N−ビス(3,4−ジメチルフェニル)アミ
ノ〕−〔2−(トリエトキシシリル)エチル〕ベンゼン
の合成 〈4−〔N,N−ビス(3,4−ジメチルフェニル)ア
ミノ〕スチレンのヒドロシリル化〉トルエン40ml、
トリエトキシシラン6.0g(37mmol)及びジク
ロロ(h−シクロオクター1,5−ジエン)白金(I
I)0.34mmolを三つ口フラスコに取り、室温で
撹拌しながら4−〔N,N−ビス(3,4−ジメチルフ
ェニル)アミノ〕スチレン9.9gのトルエン溶液20
mlを滴下した。滴下終了後、70℃で3時間撹拌を行
った後、溶媒を減圧下で除去し、淡黄色油状の4−
〔N,N−ビス(3,4−ジメチルフェニル)アミノ〕
−〔2−(トリエトキシシリル)エチル〕ベンゼンを得
た。収量14.0g(収率94.2%)。
[Synthesis Example 9] Synthesis of 4- [N, N-bis (3,4-dimethylphenyl) amino]-[2- (triethoxysilyl) ethyl] benzene <4- [N, N-bis ( Hydrosilylation of 3,4-dimethylphenyl) amino] styrene> Toluene 40 ml,
6.0 g (37 mmol) of triethoxysilane and dichloro (h-cycloocta-1,5-diene) platinum (I
I) 0.34 mmol was placed in a three-necked flask, and while stirring at room temperature, a toluene solution of 4- [N, N-bis (3,4-dimethylphenyl) amino] styrene (9.9 g) was added.
ml was added dropwise. After completion of dropping, the mixture was stirred at 70 ° C. for 3 hours, the solvent was removed under reduced pressure, and a pale yellow oily 4-
[N, N-bis (3,4-dimethylphenyl) amino]
-[2- (Triethoxysilyl) ethyl] benzene was obtained. Yield 14.0 g (94.2% yield).

【0115】この化合物のイオン化ポテンシャルを大気
下光電子分析法(理研計器製、表面分析装置AC−1)
にて測定したところ、5.31eVであった。
The ionization potential of this compound was measured by a photoelectron analysis method under atmospheric conditions (manufactured by Riken Keiki, surface analyzer AC-1).
Was 5.31 eV.

【0116】この化合物を銅基板上にワイヤーバーコー
ト法により塗布し、120℃にて12時間熱硬化し、約
5μmの膜を作成した。次に、蒸着により半透明金電極
を形成した。
This compound was applied on a copper substrate by the wire bar coating method and heat-cured at 120 ° C. for 12 hours to form a film of about 5 μm. Next, a translucent gold electrode was formed by vapor deposition.

【0117】このサンプルに対してパルス巾3nsec
の波長337nmの窒素レーザーを用いてTime−o
f−flight法にてドリフト移動度を測定したとこ
ろ7×10-7cm2/Vsecであった。
Pulse width 3 nsec for this sample
-O using a nitrogen laser with a wavelength of 337 nm
When the drift mobility was measured by the f-light method, it was 7 × 10 −7 cm 2 / Vsec.

【0118】〔合成例10〕 4−〔3−(トリエトキシシリル)プロピル〕トリフェ
ニルアミンの合成 〈4−プロモトリフェニルアミンの合成〉N−プロモス
クシンイミド8.0g(45mmol)、トリフェニル
アミン10.0g(41mmol)を200ml三つ口
フラスコに入れ、N,N−ジメチルホルムアミド150
mlを加えた後、室温下で一晩撹拌した。次いで、N,
N−ジメチルホルムアミドを除去し、得られた固形物を
四塩化炭素で抽出した。その後、四塩化炭素を除去し、
得られた反応混合物をエタノールで二回再結晶を行い、
白色固体の4−プロモトリフェニルアミンを得た。収量
8.2g(収率61.7%)。
Synthesis Example 10 Synthesis of 4- [3- (triethoxysilyl) propyl] triphenylamine <Synthesis of 4-Promotriphenylamine> N-Promosuccinimide 8.0 g (45 mmol), triphenylamine 10 0.0 g (41 mmol) was placed in a 200 ml three-necked flask, and N, N-dimethylformamide 150 was added.
After adding ml, the mixture was stirred overnight at room temperature. Then N,
N-dimethylformamide was removed and the resulting solid was extracted with carbon tetrachloride. Then remove the carbon tetrachloride,
The obtained reaction mixture was recrystallized twice from ethanol,
4-Promotriphenylamine as a white solid was obtained. The yield was 8.2 g (61.7% yield).

【0119】〈4−N,N−ジフェニルアミノアリルベ
ンゼンの合成〉300ml四つ口フラスコにマグネシウ
ム金属1.0g(40mmol)を入れ窒素置換を行っ
た。次いでジエチルエーテル100mlを加え撹拌を開
始した。そこへ4−プロモトリフェニルアミン8.6g
(27mmol)を溶解したジエチルエーテル溶液30
mlをゆっくり滴下した。約3ml滴下したところでゆ
るやかに還流が始まった。還流させながら、更にジエチ
ルエーテル溶液の滴下を続け、滴下終了後、更に一時間
還流を行った。以上のようにして得られたグリニャール
試薬溶液を室温まで戻し、次にアリルクロライド2.1
g(27mmol)のジエチルエーテル溶液40mlを
氷冷しながらゆっくり滴下した。滴下終了後、反応混合
物を2時間還流し反応を熟成した。その後、水50ml
を氷冷しながら加え加水分解を行った。次に、エーテル
層を抽出し飽和炭酸水素ナトリウム水溶液で1回、水で
2回洗浄し、次いで無水硫酸ナトリウムで乾燥した。乾
燥後、ジエチルエーテルを除去し白色固体の4−N,N
−ジフェニルアミノアリルベンゼンを得た。収量4.9
g(収率63.2%)。
<Synthesis of 4-N, N-diphenylaminoallylbenzene> 1.0 g (40 mmol) of magnesium metal was placed in a 300 ml four-necked flask and the atmosphere was replaced with nitrogen. Next, 100 ml of diethyl ether was added and stirring was started. 8.6 g of 4-promotriphenylamine there
Diethyl ether solution 30 in which (27 mmol) was dissolved
ml was slowly added dropwise. When about 3 ml was dropped, reflux started gently. While refluxing, the diethyl ether solution was further added dropwise, and after completion of the addition, the mixture was refluxed for another hour. The Grignard reagent solution obtained as described above was returned to room temperature, and then allyl chloride 2.1 was added.
40 ml of a diethyl ether solution of g (27 mmol) was slowly added dropwise while cooling with ice. After completion of dropping, the reaction mixture was refluxed for 2 hours to mature the reaction. Then 50 ml of water
Was added while cooling with ice to carry out hydrolysis. Next, the ether layer was extracted, washed once with a saturated aqueous solution of sodium hydrogen carbonate and twice with water, and then dried over anhydrous sodium sulfate. After drying, diethyl ether was removed to give 4-N, N as a white solid.
-Diphenylaminoallylbenzene was obtained. Yield 4.9
g (yield 63.2%).

【0120】〈4−N,N−ジフェニルアミノアリルベ
ンゼンのヒドロシリル化〉トルエン40ml、トリエト
キシシラン6.0g(37mmol)及びトリス(テト
ラメチルジビニルジシロキサン)二白金(0)のトルエ
ン溶液0.54mmolを三つ口フラスコに取り、室温
で撹拌しながら4−N,N−ジフェニルアミノアリルベ
ンゼン9.7g(34mmol)のトルエン溶液20m
lを滴下した。滴下終了後、70℃で3時間撹拌を行っ
た後、溶媒を減圧下で除去し、淡黄色油状の4−〔3−
(トリエトキシシリル)プロピル〕トリフェニルアミン
を得た。収量10.7g(収率70.1%)。
<Hydrosilylation of 4-N, N-diphenylaminoallylbenzene> 40 ml of toluene, 6.0 g (37 mmol) of triethoxysilane and 0.54 mmol of a toluene solution of tris (tetramethyldivinyldisiloxane) diplatinum (0). Was placed in a three-necked flask, and while stirring at room temperature, a solution of 4-N, N-diphenylaminoallylbenzene (9.7 g, 34 mmol) in toluene (20 m).
1 was added dropwise. After completion of dropping, the mixture was stirred at 70 ° C. for 3 hours, the solvent was removed under reduced pressure, and a pale yellow oily 4- [3-
(Triethoxysilyl) propyl] triphenylamine was obtained. Yield 10.7 g (70.1% yield).

【0121】この化合物のイオン化ポテンシャルを大気
下光電子分析法(理研計器製、表面分析装置AC−1)
にて測定したところ、5.72eVであった。
The ionization potential of this compound was measured by a photoelectron analysis method under atmospheric conditions (manufactured by Riken Keiki, surface analyzer AC-1).
Was 5.72 eV.

【0122】この化合物を銅基板上にワイヤーバーコー
ト法により塗布し、120℃にて12時間熱硬化し、約
9μmの膜を作成した。次に、蒸着により半透明金電極
を形成した。
This compound was applied on a copper substrate by a wire bar coating method and heat-cured at 120 ° C. for 12 hours to form a film of about 9 μm. Next, a translucent gold electrode was formed by vapor deposition.

【0123】このサンプルに対してパルス巾3nsec
の波長337nmの窒素レーザーを用いてTime−o
f−flight法にてドリフト移動度を測定したとこ
ろ1.4×10-7cm2/Vsecであった。
Pulse width 3 nsec for this sample
-O using a nitrogen laser with a wavelength of 337 nm
When the drift mobility was measured by the f-flight method, it was 1.4 × 10 −7 cm 2 / Vsec.

【0124】〔合成例11〕 4−〔4−(トリエトキシシリル)ブチル〕トリフェニ
ルアミンの合成 〈4−メチルトリフェニルアミンの合成〉ジフェニルア
ミン4.5g(27mmol)、p−ヨードトルエン1
1.0g(51mmol)、無水炭酸カリウム5.5g
(40mmol)及び銅粉1.1gをo−ジクロロベン
ゼン30mlに加え、撹拌下加熱還流を7時間行った。
反応終了後、反応溶液を瀘過し、瀘液を35%チオ硫酸
ナトリウム水溶液及び飽和食塩水で順次洗浄し、有機層
を無水硫酸ナトリウムで乾燥後、溶媒を除去した。得ら
れた反応混合物をエタノールを用いて再結晶を行い4−
メチルトリフェニルアミンを得た。収量5.7g(収率
81.4%)。
[Synthesis Example 11] Synthesis of 4- [4- (triethoxysilyl) butyl] triphenylamine <Synthesis of 4-methyltriphenylamine> 4.5 g (27 mmol) of diphenylamine, p-iodotoluene 1
1.0 g (51 mmol), 5.5 g of anhydrous potassium carbonate
(40 mmol) and 1.1 g of copper powder were added to 30 ml of o-dichlorobenzene, and the mixture was heated under reflux with stirring for 7 hours.
After completion of the reaction, the reaction solution was filtered and the filtrate was washed successively with a 35% sodium thiosulfate aqueous solution and saturated saline, and the organic layer was dried over anhydrous sodium sulfate, and then the solvent was removed. The obtained reaction mixture is recrystallized using ethanol. 4-
Methyltriphenylamine was obtained. Yield: 5.7 g (81.4% yield).

【0125】〈4−ブロモメチルトリフェニルアミンの
合成〉N−ブロモスクシンイミド6.9g(39mmo
l)、4−メチルトリフェニルアミン9.1g(35m
mol)を300ml三つ口フラスコに入れ、四塩化炭
素100mlを加えた後、撹拌下加熱還流を一晩行っ
た。反応終了後、反応溶液を冷却した。次いで、反応溶
液を瀘過し、溶媒を除去して、得られた反応混合物をエ
タノールを用いて再結晶を行い4−ブロモメチルトリフ
ェニルアミンを得た。収量10.8g(収率91.2
%)。
<Synthesis of 4-bromomethyltriphenylamine> N-bromosuccinimide 6.9 g (39 mmo)
1), 4-methyltriphenylamine 9.1 g (35 m
(mol) was placed in a 300 ml three-necked flask, 100 ml of carbon tetrachloride was added, and then the mixture was heated under reflux with stirring overnight. After the completion of the reaction, the reaction solution was cooled. Then, the reaction solution was filtered, the solvent was removed, and the obtained reaction mixture was recrystallized using ethanol to obtain 4-bromomethyltriphenylamine. Yield 10.8 g (Yield 91.2)
%).

【0126】〈4−N,Nジフェニルアミノフェニル−
1−ブテンの合成〉200ml四つ口フラスコにマグネ
シウム金属1.0g(40mmol)を入れ窒素置換を
行った。次いでジエチルエーテル100mlを加え撹拌
を開始した。そこへ4−ブロモメチルトリフェニルアミ
ン9.1g(27mmol)を溶解したジエチルエーテ
ル溶液20mlをゆっくり滴下した。約5ml滴下した
ところでゆるやかに還流が始まった。還流させながら、
更にジエチルエーテル溶液の滴下を続け、滴下終了後、
更に一時間還流を行った。以上のようにして得られたグ
リニャール試薬溶液を室温まで戻し、次にアリルクロラ
イド2.1g(27mmol)のジエチルエーテル溶液
20mlを氷冷しながらゆっくり滴下した。滴下終了
後、反応混合物を2時間還流し反応を熟成した。その
後、水50mlを氷冷しながら加え加水分解を行った。
次に、エーテル層を抽出し飽和炭酸水素ナトトリウム水
溶液で1回、水で2回洗浄し、次いで無水硫酸ナトリウ
ムで乾燥した。乾燥後、ジエチルエーテルを除去し白色
固体の4−N,N−ジフェニルアミノフェニル−1−ブ
テンを得た。収量5.5g(収率66.7%)。
<4-N, N diphenylaminophenyl-
Synthesis of 1-butene> Magnesium metal (1.0 g, 40 mmol) was placed in a 200 ml four-necked flask and the atmosphere was replaced with nitrogen. Next, 100 ml of diethyl ether was added and stirring was started. Thereto was slowly added dropwise 20 ml of a diethyl ether solution in which 9.1 g (27 mmol) of 4-bromomethyltriphenylamine was dissolved. When about 5 ml was dropped, reflux started gently. While refluxing
Continue adding the diethyl ether solution dropwise, and after the addition is complete,
Reflux for an additional hour. The Grignard reagent solution thus obtained was returned to room temperature, and then a solution of 2.1 g (27 mmol) of allyl chloride in 20 ml of diethyl ether was slowly added dropwise while cooling with ice. After completion of dropping, the reaction mixture was refluxed for 2 hours to mature the reaction. Thereafter, 50 ml of water was added while cooling with ice to effect hydrolysis.
Next, the ether layer was extracted, washed once with a saturated aqueous sodium hydrogen carbonate solution and twice with water, and then dried over anhydrous sodium sulfate. After drying, diethyl ether was removed to obtain 4-N, N-diphenylaminophenyl-1-butene as a white solid. 5.5 g (66.7% yield).

【0127】〈4−N,N−ジフェニルアミノフェニル
−1−ブテンのヒドロシリル化〉トルエン40ml、ト
リエトキシシラン9.9g(60mmol)及びトリス
(テトラメチルジビニルジシロキサン)二白金(0)の
トルエン溶液0.018mmolを三つ口フラスコに取
り、室温で撹拌しながら4−N,N−ジフェニルアミノ
フェニル−1−ブテン16.7g(54.7mmol)
のトルエン溶液20mlを滴下した。滴下終了後、70
℃で3時間撹拌を行った後、溶媒を減圧下で除去し、淡
黄色油状の4−〔4−(トリエトキシシリル)ブチル〕
トリフェニルアミンを得た。収量13.9g((収率8
3.2%)。
<Hydrosilylation of 4-N, N-diphenylaminophenyl-1-butene> A toluene solution of 40 ml of toluene, 9.9 g (60 mmol) of triethoxysilane and tris (tetramethyldivinyldisiloxane) diplatinum (0). 0.018 mmol was placed in a three-necked flask, and 16.7 g (54.7 mmol) of 4-N, N-diphenylaminophenyl-1-butene was stirred at room temperature.
Of toluene solution was added dropwise. After dropping, 70
After stirring at ℃ for 3 hours, the solvent was removed under reduced pressure to give 4- [4- (triethoxysilyl) butyl] as a pale yellow oil.
Triphenylamine was obtained. Yield 13.9 g ((Yield 8
3.2%).

【0128】この化合物のイオン化ポテンシャルを大気
下光電子分析法(理研計器製、表面分析装置AC−1)
にて測定したところ、5.69eVであった。
The ionization potential of this compound was measured by a photoelectron analysis method under atmospheric conditions (manufactured by Riken Keiki, surface analyzer AC-1).
Was 5.69 eV.

【0129】この化合物を銅基板上にワイヤーバーコー
ト法により塗布し、120℃にて12時間熱硬化し、約
5μmの膜を作成した。次に、蒸着により半透明金電極
を形成した。
This compound was applied onto a copper substrate by the wire bar coating method and heat-cured at 120 ° C. for 12 hours to form a film of about 5 μm. Next, a translucent gold electrode was formed by vapor deposition.

【0130】このサンプルに対してパルス巾3nsce
の波長337nmの窒素レーザーを用いてTime−o
f−flight法にてドリフト移動度を測定したとこ
ろ2×10-7cm2/Vsecであった。
For this sample, the pulse width is 3 nsce.
-O using a nitrogen laser with a wavelength of 337 nm
The drift mobility was measured by the f-flight method and found to be 2 × 10 −7 cm 2 / Vsec.

【0131】〔合成例12〕合成例1の樹脂溶液に4−
〔2−(トリエトキシシリル)エチル〕トリフェニルア
ミン(合成例5)樹脂固形分に対してその70重量%を
加え混合した。これをガラス板にバーコートを用いて塗
布し、140℃で15時間乾燥した。顕微鏡で観察した
ところ均一フィルムが形成されたことが判明した。
[Synthesis Example 12] The resin solution of Synthesis Example 1 was treated with 4-
[2- (Triethoxysilyl) ethyl] triphenylamine (Synthesis Example 5) 70% by weight of the resin solid content was added and mixed. This was applied to a glass plate using a bar coat, and dried at 140 ° C. for 15 hours. Observation with a microscope revealed that a uniform film was formed.

【0132】〔比較合成例1〕合成例1の樹脂溶液に正
孔輸送性化合物としてトリフェニルアミンを樹脂量に対
して30重量%溶解し、合成例12と同様に混合硬化さ
せてフィルムを形成した。フィルムは白濁し顕微鏡では
トリフェニルアミンの析出が観測された。
Comparative Synthesis Example 1 Triphenylamine as a hole transporting compound was dissolved in the resin solution of Synthesis Example 1 in an amount of 30% by weight based on the amount of the resin, and mixed and cured in the same manner as in Synthesis Example 12 to form a film. did. The film became cloudy and precipitation of triphenylamine was observed under a microscope.

【0133】〔比較合成例2〕合成例2の樹脂溶液を用
いたほかは比較合成例1と同様に行ってフィルムを形成
させた。生成したフィルムは不透明性は低下したもの
の、顕微鏡観測ではトリフェニルアミンの結晶が析出し
た。
Comparative Synthesis Example 2 A film was formed in the same manner as in Comparative Synthesis Example 1 except that the resin solution of Synthesis Example 2 was used. Although the opacity of the produced film was lowered, triphenylamine crystals were precipitated by microscopic observation.

【0134】〔比較合成例3〕合成例5で得られた4−
ビニルトリフェニルアミンにトリメチルシラン6g(6
0mmol)を使用したほかは合成例5と同様に反応さ
せ、4−〔2−(トリメチルシリル)エチル〕トリフェ
ニルアミンを得た。これを比較合成例1と同様にしてフ
ィルムを生成したところ、不透明であり、4−〔2−
(トリメチルシリル)エチル〕トリフェニルアミンの分
離が認められた。
[Comparative Synthesis Example 3] 4-obtained in Synthesis Example 5
6 g of trimethylsilane (6 g
0 mmol) was used and the reaction was performed in the same manner as in Synthesis Example 5 to obtain 4- [2- (trimethylsilyl) ethyl] triphenylamine. When a film was produced in the same manner as in Comparative Synthesis Example 1, it was opaque, and 4- [2-
Separation of (trimethylsilyl) ethyl] triphenylamine was observed.

【0135】〔合成例13〕 4−(N−エチル−N−フェニルアミノ)−〔2−(ト
リエトキシシリル)エチル〕ベンゼンの合成 〈4−(N−エチル−N−フェニルアミノ)ベンズアル
デヒドの合成〉三つ口フラスコにジフェニルエチルアミ
ン82gとDMF35.5mlを加え、氷水冷却下、攪
拌しながらオキシ塩化リン84.4mlを滴下し、滴下
終了後、温度を95℃に昇温して5時間反応させた。そ
の後、沈澱物を濾取し、エタノール/水(1:1)の混
合溶液を洗浄し、4−(N−フェニルアミノ)エチルベ
ンズアルデヒドを得た。収量62g。
Synthesis Example 13 Synthesis of 4- (N-ethyl-N-phenylamino)-[2- (triethoxysilyl) ethyl] benzene Synthesis of <4- (N-ethyl-N-phenylamino) benzaldehyde > To a three-necked flask, 82 g of diphenylethylamine and 35.5 ml of DMF were added, and 84.4 ml of phosphorus oxychloride was added dropwise with stirring while cooling with ice water. After the addition was completed, the temperature was raised to 95 ° C. and the reaction was carried out for 5 hours. It was Then, the precipitate was collected by filtration and the mixed solution of ethanol / water (1: 1) was washed to obtain 4- (N-phenylamino) ethylbenzaldehyde. Yield 62 g.

【0136】〈4−(N−エチル−N−フェニルアミ
ノ)スチレンの合成〉水素化ナトリウム14.6g、
1,2−ジメトキシエタン700mlを三つ口フラスコ
に取り、室温で攪拌しながらトリメチルホスフォニウム
ブロマイド130.8gを加えた。次に無水エタノール
を一滴加えた後、70℃に温度を昇温し、5時間反応さ
せた。反応液を濾過し、濾液と沈澱物のエーテル抽出液
を一緒にして水洗した。次いで、エーテル液を塩化カル
シウムで脱水後、エーテルを除去し、反応混合物を得
た。これをエタノールから再結晶を行い、針状、淡黄色
の結晶を得た。収量62.4g。
<Synthesis of 4- (N-ethyl-N-phenylamino) styrene> Sodium hydride 14.6 g,
700 ml of 1,2-dimethoxyethane was placed in a three-necked flask, and 130.8 g of trimethylphosphonium bromide was added with stirring at room temperature. Next, after adding one drop of absolute ethanol, the temperature was raised to 70 ° C. and the reaction was carried out for 5 hours. The reaction solution was filtered, and the filtrate and the ether extract of the precipitate were combined and washed with water. Next, the ether solution was dehydrated with calcium chloride, and the ether was removed to obtain a reaction mixture. This was recrystallized from ethanol to obtain acicular, pale yellow crystals. Yield 62.4 g.

【0137】〈4−(N−エチル−N−フェニルアミ
ノ)スチレンのヒドロシリル化〉トルエン40ml、ト
リエトキシシラン9.9g(60mmol)およびトリ
ス(テトラメチルジビニルジシロキサン)二白金(0)
のトルエン溶液0.018mmolを三つ口フラスコに
取り、室温で攪拌しながら4−(N−エチル−N−フェ
ニルアミノ)スチレン7.6gのトルエン溶液20ml
を滴下した。滴下終了後、70℃で3時間攪拌を行った
後、溶媒を減圧下で除去して、淡黄色油状の4−(N−
エチル−N−フェニルアミノ)−〔2−(トリエトキシ
シリル)エチル〕ベンゼンを得た。収量7.8g。
<Hydrosilylation of 4- (N-ethyl-N-phenylamino) styrene> Toluene 40 ml, triethoxysilane 9.9 g (60 mmol) and tris (tetramethyldivinyldisiloxane) diplatinum (0)
Toluene solution 0.018 mmol was placed in a three-necked flask, and while stirring at room temperature, 20 ml of a toluene solution of 7.6 g of 4- (N-ethyl-N-phenylamino) styrene.
Was dripped. After completion of the dropwise addition, the mixture was stirred at 70 ° C. for 3 hours, the solvent was removed under reduced pressure, and a pale yellow oily 4- (N-
Ethyl-N-phenylamino)-[2- (triethoxysilyl) ethyl] benzene was obtained. Yield 7.8g.

【0138】この化合物のイオン化ポテンシャルを大気
下光電子分析法(理研計器製、表面分析装置AC−1)
にて測定したところ、6.3eVであった。
The ionization potential of this compound was measured by a photoelectron analysis method under air (manufactured by Riken Keiki, surface analyzer AC-1).
Was 6.3 eV.

【0139】この化合物を銅基板上にワイヤーバーコー
ト法により塗布し、120℃にて12時間熱硬化し、約
5μmの膜を作成した。次に、蒸着により半透明金電極
を形成した。
This compound was applied on a copper substrate by a wire bar coating method, and thermally cured at 120 ° C. for 12 hours to form a film of about 5 μm. Next, a translucent gold electrode was formed by vapor deposition.

【0140】このサンプルに対してパルス巾3nsec
の波長337nmの窒素レーザーを用いてTime−o
f−flight法にてドリフト移動度を測定したとこ
ろ2×10-8cm2 /Vsecであった。
Pulse width 3 nsec for this sample
-O using a nitrogen laser with a wavelength of 337 nm
When the drift mobility was measured by the f-flight method, it was 2 × 10 −8 cm 2 / Vsec.

【0141】〔実施例1〕鏡面加工により作成した外径
80mmのアルミニウムシリンダー上に、アルコール可
溶性共重合ナイロン(商品名アミランCM−8000、
東レ(株)製)5重量部をメタノール95重量部に溶解
した溶液を浸漬コーティング法により塗工した。80℃
で10分間乾燥して、膜厚が1μmの下引き層を形成し
た。
Example 1 Alcohol-soluble copolymer nylon (trade name Amilan CM-8000, manufactured by mirror-finishing) was placed on an aluminum cylinder having an outer diameter of 80 mm.
A solution obtained by dissolving 5 parts by weight of Toray Industries, Inc. in 95 parts by weight of methanol was applied by a dip coating method. 80 ℃
And dried for 10 minutes to form an undercoat layer having a film thickness of 1 μm.

【0142】次に、電荷発生層用分散液として下記のビ
スアゾ顔料5重量部をシクロヘキサノン95重量部にポ
リビニルベンザール(ベンザール化度75%以上)2重
量部を溶解した液に加え、サンドミルで20時間分散し
た。
Next, as a charge generation layer dispersion liquid, 5 parts by weight of the following bisazo pigment was added to a solution in which 95 parts by weight of cyclohexanone and 2 parts by weight of polyvinylbenzal (having a degree of benzalization of 75% or more) were dissolved. Time dispersed.

【0143】この分散液を先に形成した下引き層の上に
乾燥後の膜厚が0.2μmとなるように浸漬コーティン
グ法で塗工した。
This dispersion was applied onto the previously formed undercoat layer by a dip coating method so that the film thickness after drying would be 0.2 μm.

【0144】[0144]

【外14】 [Outside 14]

【0145】次いで、下記の構造式を有するトリアリー
ルアミン化合物5重量部とポリカーボネート樹脂(商品
名Z−200、三菱瓦斯化学(株)製)5重量部をクロ
ロベンゼン70重量部に溶解した電荷輸送層用の液に平
均粒径2μmのシリコーン樹脂微粒子0.3重量部を添
加したものを前記の電荷発生層の上に浸漬コーティング
法により乾燥後10μmの膜厚に塗工した。
Next, 5 parts by weight of a triarylamine compound having the following structural formula and 5 parts by weight of a polycarbonate resin (trade name Z-200, manufactured by Mitsubishi Gas Chemical Co., Inc.) were dissolved in 70 parts by weight of chlorobenzene to form a charge transport layer. A solution for use in which 0.3 part by weight of silicone resin fine particles having an average particle size of 2 μm was added was dried on the charge generation layer by a dip coating method and then applied to a film thickness of 10 μm.

【0146】[0146]

【外15】 [Outside 15]

【0147】次に、合成例1の硬化性組成物100重量
部にトルエン200重量部と合成例8で合成した4−
〔N,N−ビス(3,4−ジメチルフェニル)アミノ〕
−〔2−(トリエトキシシリル)エチル〕ベンゼン40
重量部を加えた硬化性組成物をスプレーコーティング法
により塗工した。
Next, 200 parts by weight of toluene was added to 100 parts by weight of the curable composition of Synthesis Example 1 and 4-synthesized in Synthesis Example 8.
[N, N-bis (3,4-dimethylphenyl) amino]
-[2- (triethoxysilyl) ethyl] benzene 40
The curable composition containing parts by weight was applied by a spray coating method.

【0148】140℃で4時間乾燥、熱硬化することで
透明で均一な膜厚が2μmの表面保護層を形成した。
By drying at 140 ° C. for 4 hours and thermosetting, a transparent and uniform surface protective layer having a thickness of 2 μm was formed.

【0149】この電子写真感光体を−700Vに帯電し
て波長680nmの光を用いて電子写真特性を測定した
ところ、E1/2(−350Vまで帯電電位が減少する
ために必要な露光量)が1.2μJ/cm2 、残留電位
が−26Vと良好であった。
When this electrophotographic photosensitive member was charged to -700 V and the electrophotographic characteristics were measured using light having a wavelength of 680 nm, E1 / 2 (exposure amount necessary for reducing the charging potential to -350 V) was found. The residual potential was 1.2 μJ / cm 2 , and the residual potential was −26 V, which was excellent.

【0150】本電子写真感光体をキヤノン製デジタルフ
ルカラー複写機CLC−500を副走査方向で63.5
μm、主走査方向で20μmの照射スポット径(1/e
2 )となるように改造した評価機を用いて初期帯電−5
00Vに設定して画像評価を行ったところ、初期及び1
0万枚耐久試験後も黒ポチ等の電荷注入及び干渉縞もな
く、感光体の摩耗量も0.8μmと少なく、均一性の優
れた画像出力が得られ、階調再現性も400dpiで2
56階調と極めて良好であった。
This electrophotographic photosensitive member was mounted on a Canon digital full-color copying machine CLC-500 for 63.5 in the sub-scanning direction.
irradiation spot diameter of 1 μm and 20 μm in the main scanning direction (1 / e
2 ) Initial charge-5 using an evaluation machine modified to
When the image was evaluated by setting it to 00V, the initial and 1
After the endurance test of 0,000 sheets, there was no charge injection such as black spots and interference fringes, the amount of wear on the photoconductor was as small as 0.8 μm, and image output with excellent uniformity was obtained, and the gradation reproducibility was 2 at 400 dpi.
The tone was 56, which was extremely good.

【0151】〔比較合成例4〕合成例4の樹脂溶液10
0重量部に実施例1にて使用したトリアリールアミン化
合物を樹脂量に対して30重量%溶解し、合成例12と
同様に混合硬化させてフィルムを形成した。フィルムは
白濁し顕微鏡ではトリフェニルアミンの析出が観測され
た。
Comparative Synthesis Example 4 Resin Solution 10 of Synthesis Example 4
The triarylamine compound used in Example 1 was dissolved in 0 part by weight in an amount of 30% by weight based on the amount of the resin, and mixed and cured in the same manner as in Synthesis Example 12 to form a film. The film became cloudy and precipitation of triphenylamine was observed under a microscope.

【0152】〔比較例1〕実施例1において保護層を塗
工しないこと以外は同様にして作成した電子写真感光体
の画像評価を行ったところ、2万枚の耐久試験後に黒ポ
チ等が大量に発生したために良好な画像は得られなかっ
た。感光体の摩耗量は2万枚で5μmと極めて大きかっ
た。
[Comparative Example 1] An image of an electrophotographic photosensitive member prepared in the same manner as in Example 1 except that the protective layer was not coated was subjected to image evaluation. After a durability test of 20,000 sheets, a large amount of black spots and the like were found. A good image could not be obtained due to the occurrence of the above phenomenon. The amount of abrasion of the photoconductor was 20,000 sheets and was extremely large at 5 μm.

【0153】〔実施例2〕引き抜き加工により得られた
外径30mmのアルミニウムシリンダー上に、フェノー
ル樹脂(商品名プライオーフェン、大日本インキ化学工
業(株)製)167重量部をメチルセロソルブ100重
量部に溶解したものへ導電性硫酸バリウム超微粒子(1
次粒径50nm)200重量部及び平均粒径2μmのシ
リコーン樹脂粒子3重量部を分散したものを浸漬コーテ
ィング法により塗工し、乾燥後の膜厚が15μmの導電
層を形成した。
Example 2 On an aluminum cylinder having an outer diameter of 30 mm obtained by drawing, 167 parts by weight of a phenol resin (trade name Praiophen, manufactured by Dainippon Ink and Chemicals, Inc.) was added to 100 parts by weight of methyl cellosolve. Conductive barium sulfate ultrafine particles (1
A dispersion of 200 parts by weight of a secondary particle size of 50 nm) and 3 parts by weight of silicone resin particles having an average particle size of 2 μm was applied by a dip coating method to form a conductive layer having a thickness of 15 μm after drying.

【0154】上記導電層上に、アルコール可溶性共重合
ナイロン(商品名アミランCM−8000、東レ(株)
製)5重量部をメタノール95重量部に溶解した溶液を
浸漬コーティング法により塗工した。80℃で10分間
乾燥して、膜厚が1μmの下引き層を形成した。
Alcohol-soluble copolymer nylon (trade name: Amilan CM-8000, Toray Industries, Inc.) was formed on the conductive layer.
5 parts by weight dissolved in 95 parts by weight of methanol was applied by a dip coating method. It was dried at 80 ° C. for 10 minutes to form an undercoat layer having a film thickness of 1 μm.

【0155】次に、電荷発生層用分散液としてCuKα
特性X線回折におけるブラック角(2θ±0.2°)の
9.0°,14.2°,23.9°及び27.1°に強
いピークを有するオキシチタニウムフタロシアニン顔料
5重量部をシクロヘキサノン95重量部にポリビニルベ
ンザール(ベンザール化度75%以上)2重量部を溶解
した液に加え、サンドミルで2時間分散した。
Next, CuKα was used as the dispersion for the charge generation layer.
5 parts by weight of oxytitanium phthalocyanine pigment having strong peaks at 9.0 °, 14.2 °, 23.9 ° and 27.1 ° of the black angle (2θ ± 0.2 °) in characteristic X-ray diffraction was added to cyclohexanone 95. 2 parts by weight of polyvinylbenzal (having a degree of benzal of 75% or more) was dissolved in parts by weight, and the mixture was dispersed in a sand mill for 2 hours.

【0156】この分散液を先に形成した下引き層の上に
乾燥後の膜厚が0.2μmとなるように浸漬コーティン
グ法で塗工した。
This dispersion was applied onto the previously formed undercoat layer by a dip coating method so that the film thickness after drying would be 0.2 μm.

【0157】次いで、合成例9で合成した有機ケイ素変
成トリアリールアミン化合物55重量部と合成例3のシ
リコーン系熱硬化樹脂100重量部をトルエン100重
量に加え溶解したものを前記の電荷発生層の上に浸漬コ
ーティング法により塗工した。120℃で5時間乾燥、
熱硬化して膜厚10μmの透明で均一な電荷輸送層を作
成した。
Next, 55 parts by weight of the organosilicon-modified triarylamine compound synthesized in Synthesis Example 9 and 100 parts by weight of the silicone-based thermosetting resin of Synthesis Example 3 were added to 100 parts by weight of toluene and dissolved to prepare the above charge generation layer. It was coated on the above by the dip coating method. Dried at 120 ° C for 5 hours,
It was heat-cured to form a transparent and uniform charge transport layer having a film thickness of 10 μm.

【0158】鉛筆硬度は5Hであり、水の接触角は10
5度であった。
The pencil hardness is 5H and the contact angle of water is 10
5 degrees.

【0159】この電子写真感光体を−700Vに帯電
し、波長680nmの光を用いて電子写真特性を測定し
たところ、E1/2(−350Vまで帯電電位が減少す
るために必要な露光量)が0.2μJ/cm2 、残留電
位が−32Vと良好であった。
This electrophotographic photosensitive member was charged to -700 V and the electrophotographic characteristics were measured using light having a wavelength of 680 nm. As a result, E1 / 2 (exposure amount necessary for reducing the charging potential to -350 V) was obtained. The residual potential was 0.2 μJ / cm 2 , and the residual potential was −32 V, which was excellent.

【0160】本電子写真感光体をキヤノン製レーザービ
ームプリンタLBP−8IVの改造機(照射スポット
(1/e2 )を副走査方向で63.5μm、主走査方向
で20μmに改造)を用いて初期帯電−500Vに設定
して画像評価を行ったところ、4000枚の耐久試験後
の感光体の摩耗量は0.1μm以下と極めて少なく、耐
久後の水の接触角も100度と良好で、画像の劣化もな
く、600dpi相当の入力信号においてのハイライト
部の1画素再現性も十分であった。
This electrophotographic photosensitive member was initially used by using a modified laser beam printer LBP-8IV manufactured by Canon Inc. (irradiation spot (1 / e 2 ) was modified to 63.5 μm in the sub-scanning direction and 20 μm in the main scanning direction). When the image was evaluated by setting the charge to -500V, the abrasion loss of the photoreceptor after the 4000 sheets durability test was extremely small, 0.1 μm or less, and the contact angle of water after the durability test was 100 degrees, which was good. Was not deteriorated, and the reproducibility of one pixel in the highlight portion in the input signal equivalent to 600 dpi was sufficient.

【0161】〔比較例2〕実施例1において用いたトリ
アリールアミン化合物5重量部とポリカーボネート樹脂
(商品名Z−200、三菱瓦斯化学(株)製)5重量部
をクロロベンゼン70重量部に溶解した電荷輸送層用の
液を実施例2の電荷発生層の上に浸漬コーティング法に
より塗工することによって、乾燥後の膜厚が10μmの
電荷輸送層を形成した。得られた電子写真感光体を実施
例2と同様にして評価したところ、4000枚の耐久試
験後は干渉縞及び黒ポチが認められ、摩耗量が1.8μ
mと大きく、水の接触角も72度と小さいために不良で
あり、600dpiでのハイライト部の1画素再現も不
十分でムラがあった。
Comparative Example 2 5 parts by weight of the triarylamine compound used in Example 1 and 5 parts by weight of a polycarbonate resin (trade name Z-200, manufactured by Mitsubishi Gas Chemical Co., Inc.) were dissolved in 70 parts by weight of chlorobenzene. The liquid for the charge transport layer was applied onto the charge generation layer of Example 2 by a dip coating method to form a charge transport layer having a film thickness after drying of 10 μm. When the obtained electrophotographic photosensitive member was evaluated in the same manner as in Example 2, interference fringes and black spots were observed after the durability test of 4000 sheets, and the abrasion amount was 1.8 μm.
Since the contact angle of water is as large as 72 m and the contact angle of water is as small as 72 degrees, it is defective, and the reproduction of one pixel in the highlight portion at 600 dpi is insufficient and uneven.

【0162】〔実施例3〕実施例2と同様のアルミニウ
ムシリンダー上に、フェノール樹脂(商品名プライオー
フェン、大日本インキ化学工業(株)製)167重量部
をメチルセロソルブ100重量部に溶解したものへ導電
性硫酸バリウム超微粒子(1次粒径50nm)200重
量部を分散したものを浸漬コーティング法により、乾燥
後の膜厚が10μmとなるように塗工した。この導電性
支持体に実施例2と同様にして膜厚1μmの下引き層、
及び膜厚0.2μmの電荷発生層を形成した。
Example 3 On an aluminum cylinder similar to that of Example 2, 167 parts by weight of a phenol resin (trade name Praiophen, manufactured by Dainippon Ink and Chemicals, Inc.) was dissolved in 100 parts by weight of methyl cellosolve. A dispersion of 200 parts by weight of conductive barium sulfate ultrafine particles (primary particle size 50 nm) was applied by a dip coating method so that the film thickness after drying would be 10 μm. An undercoat layer having a film thickness of 1 μm was formed on the conductive support in the same manner as in Example 2.
And a charge generation layer having a thickness of 0.2 μm was formed.

【0163】次いで、合成例8で合成した有機ケイ素変
成トリアリールアミン化合物40重量部と合成例2のシ
リコーン系熱硬化樹脂100重量部をトルエン100重
量部に加え溶解したものに更に平均粒径3μmのSiO
2 微粒子0.5重量部を添加したものを前記の電荷発生
層の上に浸漬コーティング法により塗工した。120℃
で5時間乾燥、熱硬化して膜厚10μmの電荷輸送層を
作成した。
Next, 40 parts by weight of the organosilicon-modified triarylamine compound synthesized in Synthesis Example 8 and 100 parts by weight of the silicone-based thermosetting resin of Synthesis Example 2 were added to 100 parts by weight of toluene and dissolved, and the average particle size was further 3 μm. SiO
2 0.5 parts by weight of fine particles were added to the above charge generation layer and applied by dip coating. 120 ° C
Was dried for 5 hours and heat-cured to form a charge transport layer having a film thickness of 10 μm.

【0164】顕微鏡で観察したところSiO2 粒子以外
は透明で均一であった。
When observed under a microscope, it was transparent and uniform except for the SiO 2 particles.

【0165】鉛筆硬度は4Hであり、水の接触角は11
0度であった。
The pencil hardness was 4H and the contact angle of water was 11
It was 0 degrees.

【0166】この電子写真感光体を−700Vに帯電
し、波長680nmの光を用いて電子写真特性を測定し
たところ、E1/2(−350Vまで帯電電位が減少す
るために必要な露光量)が0.23μJ/cm2 、残留
電位31Vと良好であった。
This electrophotographic photosensitive member was charged to -700 V, and the electrophotographic characteristics were measured using light having a wavelength of 680 nm. As a result, E1 / 2 (exposure amount necessary for reducing the charging potential to -350 V) was obtained. The residual potential was 0.23 μJ / cm 2 , and the residual potential was 31 V, which were favorable.

【0167】本電子写真感光体を実施例2と同様のレー
ザービームプリンタを用いて初期帯電−500Vに設定
して画像評価を行ったところ、1万枚の耐久試験後の感
光体の摩耗量は0.2μm以下と極めて少なく、水の接
触角は102度と良好で黒ポチ等の電荷注入及び干渉縞
による画像の劣化もなく、600dpi相当の入力信号
においてのハイライト部の1画素再現性も十分であっ
た。
The electrophotographic photoreceptor was set to an initial charge of -500 V using the same laser beam printer as in Example 2 and image evaluation was carried out. As a result, the abrasion loss of the photoreceptor after 10,000 durability tests was found. The contact angle of water is as small as 0.2 μm or less, the contact angle of water is as good as 102 degrees, and there is no image deterioration due to charge injection such as black spots and interference fringes, and 1 pixel reproducibility of the highlight part in the input signal equivalent to 600 dpi. Was enough.

【0168】〔実施例4〕実施例1と同様にして、電荷
発生層まで形成した。
Example 4 Similar to Example 1, a charge generating layer was formed.

【0169】次いで、実施例1で用いた電荷輸送層用の
液に平均粒径2μmのシリコーン樹脂微粒子0.1重量
部を添加したものを前記の電荷発生層の上に浸漬コーテ
ィング法により乾燥後9μmの膜厚に塗工した。
Then, 0.1 part by weight of silicone resin fine particles having an average particle size of 2 μm was added to the liquid for the charge transport layer used in Example 1 and dried on the above charge generating layer by a dip coating method. It was applied to a film thickness of 9 μm.

【0170】次に、表面保護層として合成例4の樹脂溶
液100重量部にトルエン200重量部と合成例8で合
成した4−〔N,N−ビス(3,4−ジメチルフェニ
ル)アミノ〕−〔2−(トリエトキシシリル)エチル〕
ベンゼン40重量部を加えた硬化性組成物をスプレーコ
ーティング法により、塗工した。
Next, as a surface protection layer, 200 parts by weight of toluene in 100 parts by weight of the resin solution of Synthesis Example 4 and 4- [N, N-bis (3,4-dimethylphenyl) amino] -synthesized in Synthesis Example 8 were used. [2- (triethoxysilyl) ethyl]
A curable composition containing 40 parts by weight of benzene was applied by a spray coating method.

【0171】140℃で4時間乾燥、熱硬化することで
透明で均一な膜厚が3μmの表面保護層を形成した。鉛
筆硬度は2Hであり、水の接触角は115度であった。
By drying at 140 ° C. for 4 hours and thermosetting, a transparent and uniform surface protective layer having a thickness of 3 μm was formed. The pencil hardness was 2H and the contact angle of water was 115 degrees.

【0172】この電子写真感光体の電子写真特性を実施
例1と同様にして評価したところ、E1/2=0.70
μJ/cm2 、残留電位が−35Vと良好であった。
When the electrophotographic characteristics of this electrophotographic photosensitive member were evaluated in the same manner as in Example 1, E1 / 2 = 0.70.
μJ / cm 2 , and the residual potential was good at -35V.

【0173】本電子写真感光体を実施例1と同様のデジ
タルフルカラー複写機を用いて初期帯電−400Vに設
定して画像評価を行ったところ、1万枚の耐久試験後の
摩耗量は0.13μmと極めて少なく、水の接触角は1
09度であり、ハイライト部、高濃度部の再現性の優れ
た画像が得られた。
Using the same digital full-color copying machine as in Example 1, the present electrophotographic photosensitive member was set to an initial charge of -400 V and image evaluation was carried out. As a result, the abrasion loss after 10,000 sheets of durability test was 0. It is extremely small at 13 μm, and the contact angle of water is 1
It was 09 degrees, and an image with excellent reproducibility in the highlight portion and the high density portion was obtained.

【0174】〔実施例5〕実施例2と同様にして、電荷
発生層まで形成した。
[Embodiment 5] A charge generation layer was formed in the same manner as in Embodiment 2.

【0175】次いで、合成例13で合成した有機ケイ素
変成トリアリールアミン化合物60重量部と合成例3の
シリコーン系熱硬化樹脂100重量部をトルエン100
重量部に加え溶解したものを前記の電荷発生層の上に浸
漬コーティング法により塗工した。120℃にて5時間
乾燥、熱硬化して電荷輸送層の膜厚10μmの本発明の
感光体を作成した。
Next, 60 parts by weight of the organosilicon-modified triarylamine compound synthesized in Synthesis Example 13 and 100 parts by weight of the silicone thermosetting resin of Synthesis Example 3 were added to 100 parts of toluene.
What was added in addition to the weight part and melt | dissolved was apply | coated by the dip coating method on the said charge generation layer. The photoconductor of the present invention having a charge transport layer having a thickness of 10 μm was prepared by drying at 120 ° C. for 5 hours and heat curing.

【0176】鉛筆硬度は5Hであり、水の接触角は10
7度であった。
The pencil hardness is 5H and the contact angle of water is 10.
7 degrees.

【0177】実施例2と同様にして電子写真特性を測定
したところ、E1/2が0.20μJ/cm2 、残留電
位が−45Vであった。
When the electrophotographic characteristics were measured in the same manner as in Example 2, E1 / 2 was 0.20 μJ / cm 2 , and the residual potential was −45V.

【0178】本電子写真感光体を実施例2と同様のレー
ザービームプリンタを用いて初期帯電−500Vに設定
して画像評価を行ったところ、1万枚の耐久試験後の感
光体の摩耗量は0.28μmと極めて少なく、水の接触
角は98度と良好で黒ポチ等の電荷注入及び干渉縞によ
る画像の劣化もなく、600dpi相当の入力信号にお
いてのハイライト部の1画素再現性も十分であった。
Using the same laser beam printer as in Example 2, the present electrophotographic photosensitive member was set to an initial charge of −500 V and image evaluation was carried out. As a result, the abrasion loss of the photosensitive member after 10,000 sheets of durability test was found. It is extremely small at 0.28 μm, the contact angle of water is as good as 98 degrees, there is no image deterioration due to charge injection such as black spots and interference fringes, and the 1-pixel reproducibility of the highlight part in an input signal equivalent to 600 dpi is sufficient. Met.

【0179】[0179]

【発明の効果】以上のように、本発明によれば、光散乱
やブリードがなく、均一で、低表面エネルギーと機械
的、電気的耐久性を両立した電子写真感光体、及び該電
子写真感光体を有するプロセスカートリッジ及び画像形
成装置を提供することができた。
As described above, according to the present invention, there is no light scattering or bleeding, the electrophotographic photosensitive member is uniform and has both low surface energy and mechanical and electrical durability, and the electrophotographic photosensitive member. A process cartridge having a body and an image forming apparatus can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の電子写真感光体の層構成の例を示す図
である。
FIG. 1 is a diagram showing an example of a layer structure of an electrophotographic photosensitive member of the present invention.

【図2】本発明の電子写真感光体の層構成の例を示す図
である。
FIG. 2 is a diagram showing an example of a layer structure of an electrophotographic photosensitive member of the present invention.

【図3】光の強度分布、スポット径及び光のスポット面
積と感光層の厚さの積の関係を示す図である。
FIG. 3 is a diagram showing a relationship between a light intensity distribution, a spot diameter, and a product of a light spot area and a thickness of a photosensitive layer.

【図4】本発明の画像形成装置の第1の例の概略構成を
示す図である。
FIG. 4 is a diagram illustrating a schematic configuration of a first example of the image forming apparatus of the present invention.

【図5】本発明の画像形成装置の第2の例の概略構成を
示す図である。
FIG. 5 is a diagram showing a schematic configuration of a second example of the image forming apparatus of the invention.

【図6】実施例5の4−〔2−(トリエトキシシリル)
エチル〕トリフェニルアミンのH−NMRスペクトルで
ある。
FIG. 6 4- [2- (triethoxysilyl) of Example 5
3 is an H-NMR spectrum of ethyl] triphenylamine.

【図7】実施例8の4−〔N,N−ビス(3,4−ジメ
チルフェニル)アミノ〕−〔2−(トリエトキシシリ
ル)エチル〕ベンゼンのH−NMRスペクトルである。
FIG. 7 is an H-NMR spectrum of 4- [N, N-bis (3,4-dimethylphenyl) amino]-[2- (triethoxysilyl) ethyl] benzene of Example 8.

【図8】実施例8の4−〔N,N−ビス(3,4−ジメ
チルフェニル)アミノ〕−〔2−(トリエトキシシリ
ル)エチル〕ベンゼンのC−NMRスペクトルである。
FIG. 8 is a C-NMR spectrum of 4- [N, N-bis (3,4-dimethylphenyl) amino]-[2- (triethoxysilyl) ethyl] benzene of Example 8.

Claims (13)

【特許請求の範囲】[Claims] 【請求項1】 支持体上に感光層を有する電子写真感光
体において、該電子写真感光体の表面層が硬化性有機ケ
イ素系高分子及び下記式(1) 【外1】 (Aは正孔輸送性基を示し、Qは加水分解性基または水
酸基を示し、R2 は置換もしくは無置換の一価炭化水素
基を示し、R3 は置換もしくは無置換のアルキレン基ま
たはアリーレン基を示し、mは1〜3の整数を示し、1
は正の整数を示す。)で示される有機ケイ素変成正孔輸
送性化合物を硬化することによって得られる樹脂を含有
することを特徴とする電子写真感光体。
1. An electrophotographic photoreceptor having a photosensitive layer on a support, wherein the surface layer of the electrophotographic photoreceptor is a curable organosilicon polymer and the following formula (1) (A represents a hole transporting group, Q represents a hydrolyzable group or a hydroxyl group, R 2 represents a substituted or unsubstituted monovalent hydrocarbon group, and R 3 represents a substituted or unsubstituted alkylene group or arylene. Represents a group, m represents an integer of 1 to 3, and 1
Represents a positive integer. ) An electrophotographic photoreceptor containing a resin obtained by curing an organosilicon-modified hole transporting compound represented by
【請求項2】 R2 が炭素数1〜15の一価炭化水素基
またはハロゲン置換一価炭化水素基であり、R3 が 【外2】 (nは1〜18の整数)で示され、lが1〜5の整数で
ある請求項1記載の電子写真感光体。
2. R 2 is a monovalent hydrocarbon group having 1 to 15 carbon atoms or a halogen-substituted monovalent hydrocarbon group, and R 3 is The electrophotographic photosensitive member according to claim 1, wherein n is an integer of 1 to 18 and 1 is an integer of 1 to 5.
【請求項3】 Qが−OR1 (R1 はアルキル基または
アルコキシアルキル基を示す。)で示される請求項1ま
たは2記載の電子写真感光体。
3. The electrophotographic photoreceptor according to claim 1, wherein Q is —OR 1 (R 1 represents an alkyl group or an alkoxyalkyl group).
【請求項4】 R1 の炭素数が1〜6である請求項3記
載の電子写真感光体。
4. The electrophotographic photosensitive member according to claim 3, wherein R 1 has 1 to 6 carbon atoms.
【請求項5】 Aが下記式(2) 【外3】 (R4 、R5 及びR6 は有機基であり、そのうちの少な
くとも1つは芳香族炭化水素環基または複素環基を示
し、R4 、R5 及びR6 は同一であっても異なっていて
もよい。)で示される請求項1乃至4のいずれかに記載
の電子写真感光体。
5. A is the following formula (2): (R 4 , R 5 and R 6 are organic groups, at least one of which represents an aromatic hydrocarbon ring group or a heterocyclic group, and R 4 , R 5 and R 6 are the same or different. 5. The electrophotographic photosensitive member according to claim 1, wherein
【請求項6】 硬化性有機ケイ素高分子が下記式(3) R7 r SiO(4-r-s)/2 (OR8s (3) (R7 は直鎖状もしくは分岐状のアルキル基、アルケニ
ル基またはアリール基を示し、R8 は水素原子またはア
ルキル基を示し、r及びsはモル比を示す。)で示され
る請求項1乃至5のいずれかに記載の電子写真感光体。
6. A curable organosilicon polymer is represented by the following formula (3) R 7 r SiO (4-rs) / 2 (OR 8 ) s (3) (R 7 is a linear or branched alkyl group, The electrophotographic photosensitive member according to claim 1, wherein R 8 represents an alkenyl group or an aryl group, R 8 represents a hydrogen atom or an alkyl group, and r and s represent a molar ratio.
【請求項7】 rが平均0.5〜1.5であり、sが平
均0.01〜1.5である請求項6記載の電子写真感光
体。
7. The electrophotographic photoreceptor according to claim 6, wherein r is 0.5 to 1.5 on average, and s is 0.01 to 1.5 on average.
【請求項8】 有機ケイ素変成正孔輸送性化合物が4.
5〜6.2eVのイオン化ポテンシャルを有する請求項
1乃至7のいずれかに記載の電子写真感光体。
8. The modified organosilicon hole-transporting compound.
The electrophotographic photosensitive member according to any one of claims 1 to 7, which has an ionization potential of 5 to 6.2 eV.
【請求項9】 有機ケイ素変成正孔輸送性化合物が1×
10-7cm2 /Vsec以上のドリフト移動度を有する
請求項1乃至8のいずれかに記載の電子写真感光体。
9. The method according to claim 1, wherein the modified organosilicon hole transporting compound is 1 ×
The electrophotographic photosensitive member according to any one of claims 1 to 8 having 10 -7 cm 2 / Vsec or more drift mobility.
【請求項10】 電子写真感光体、及び帯電手段、現像
手段及びクリーニング手段からなる群より選ばれる少な
くともひとつの手段を一体に支持し、画像形成装置本体
に着脱自在であるプロセスカートリッジにおいて、 該電子写真感光体が支持体上に感光層を有する電子写真
感光体であって、該電子写真感光体の表面層が硬化性有
機ケイ素系高分子及び下記式(1) 【外4】 (Aは正孔輸送性基を示し、Qは加水分解性基または水
酸基を示し、R2 は置換もしくは無置換の一価炭化水素
基を示し、R3 は置換もしくは無置換のアルキレン基ま
たはアリーレン基を示し、mは1〜3の整数を示し、1
は正の整数を示す。)で示される有機ケイ素変成正孔輸
送性化合物を硬化することによって得られる樹脂を含有
することを特徴とするプロセスカートリッジ。
10. A process cartridge which integrally supports an electrophotographic photosensitive member and at least one unit selected from the group consisting of a charging unit, a developing unit and a cleaning unit, and which is detachable from the main body of the image forming apparatus. The photographic photoreceptor is an electrophotographic photoreceptor having a photosensitive layer on a support, and the surface layer of the electrophotographic photoreceptor is a curable organosilicon polymer and the following formula (1) (A represents a hole transporting group, Q represents a hydrolyzable group or a hydroxyl group, R 2 represents a substituted or unsubstituted monovalent hydrocarbon group, and R 3 represents a substituted or unsubstituted alkylene group or arylene. Represents a group, m represents an integer of 1 to 3, and 1
Represents a positive integer. A process cartridge containing a resin obtained by curing the modified organosilicon hole transporting compound represented by the formula (1).
【請求項11】 R2 が炭素数1〜15の一価炭化水素
基またはハロゲン置換一価炭化水素基であり、R3 が 【外5】 (nは1〜18の整数)で示され、lが1〜5の整数で
ある請求項10記載のプロセスカートリッジ。
11. R 2 is a monovalent hydrocarbon group having 1 to 15 carbon atoms or a halogen-substituted monovalent hydrocarbon group, and R 3 is The process cartridge according to claim 10, wherein the process cartridge is represented by (n is an integer of 1 to 18), and l is an integer of 1 to 5.
【請求項12】 電子写真感光体、帯電手段、露光手
段、現像手段及び転写手段を有する画像形成装置におい
て、 該電子写真感光体が支持体上に感光層を有する電子写真
感光体であって、該電子写真感光体の表面層が硬化性有
機ケイ素系高分子及び下記式(1) 【外6】 (Aは正孔輸送性基を示し、Qは加水分解性基または水
酸基を示し、R2 は置換もしくは無置換の一価炭化水素
基を示し、R3 は置換もしくは無置換のアルキレン基ま
たはアリーレン基を示し、mは1〜3の整数を示し、1
は正の整数を示す。)で示される有機ケイ素変成正孔輸
送性化合物を硬化することによって得られる樹脂を含有
することを特徴とする画像形成装置。
12. An image forming apparatus having an electrophotographic photosensitive member, a charging unit, an exposing unit, a developing unit and a transferring unit, wherein the electrophotographic photosensitive member has a photosensitive layer on a support, The surface layer of the electrophotographic photoreceptor is a curable organosilicon polymer and the following formula (1) (A represents a hole transporting group, Q represents a hydrolyzable group or a hydroxyl group, R 2 represents a substituted or unsubstituted monovalent hydrocarbon group, and R 3 represents a substituted or unsubstituted alkylene group or arylene. Represents a group, m represents an integer of 1 to 3, and 1
Represents a positive integer. An image forming apparatus comprising a resin obtained by curing the modified organosilicon hole transporting compound represented by the formula (1).
【請求項13】 R2 が炭素数1〜15の一価炭化水素
基またはハロゲン置換一価炭化水素基であり、R3 が 【外7】 (nは1〜18の整数)で示され、lが1〜5の整数で
ある請求項12記載の画像形成装置。
13. R 2 is a monovalent hydrocarbon group having 1 to 15 carbon atoms or a halogen-substituted monovalent hydrocarbon group, and R 3 is The image forming apparatus according to claim 12, wherein (n is an integer of 1 to 18), and l is an integer of 1 to 5.
JP29388796A 1995-11-06 1996-11-06 Electrophotographic photosensitive member, process cartridge having the electrophotographic photosensitive member, and image forming apparatus Expired - Fee Related JP3267519B2 (en)

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