JPH09183692A - Apparatus for producing silicon single crystal and method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To stably produce a silicon single crystal of a large diameter improved in the continuity of an impurity concn. from a large amt. of a silicon melt by housing this melt into a quartz crucible of a large diameter in an apparatus for producing the single crystal by an HMCZ method (horizontal magnetic field impression CZ method). SOLUTION: This apparatus for producing the silicon single crystal is provided with a heater having the length Ls of slits 4a which are exothermic parts of >=0.3 to <=0.7 times the inside diameter of the crucible as a resistance heater 4 for heating the crucible 2. The resistance heater and the crucible are made liftable by a lifting mechanism. At the time of producing the silicon single crystal by operating conditions under which the silicon melt amt. in the crucible of such apparatus for production decreases with lapse of the single crystal pulling-up time, the center Cs in the vertical direction of the slits of the resistance heater is positioned lower than the surface Sm of the silicon melt 6 and the falling component of the surface Sm by the pulling up of the single crystal is offset by rising of the crucible.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention is based on a horizontal magnetic field application CZ method (HMCZ method) in which a large-diameter silicon single crystal is pulled from a silicon melt in a large-diameter crucible while applying a horizontal magnetic field to the silicon melt. The present invention relates to a large diameter silicon single crystal manufacturing apparatus and method.

[0002]

2. Description of the Related Art In recent years, as semiconductor devices have become more highly integrated and more highly accurate, semiconductor crystal substrates have become larger in diameter and higher in quality. Semiconductor crystals are mainly manufactured by the Czochralski method (pulling method), and at present, efforts are being made to further increase the diameter and quality.

An apparatus and method for producing a silicon single crystal ingot by the Czochralski method will be described with reference to FIG. 5. A quartz crucible 2 held by a graphite susceptor 3 is provided at approximately the center of a pulling chamber 1. The center of the bottom of the graphite susceptor 3 is supported from below by a support shaft 10 which is rotatable and vertically movable. Polycrystalline silicon as a raw material is filled in the quartz crucible 2 and heated and melted by a resistance heater (graphite heater) 4 surrounded by a heat retaining body 5 to form a melt 6. An opening 12 is provided at the center of the ceiling of the pulling chamber 1, and a rotatable / upward / downward pulling shaft 7 holding a seed crystal 14 at the tip is provided through a subchamber 13 connected to the opening 12. When pulling the single crystal, lower the pulling shaft 7,
After immersing the seed crystal 14 in the melt 6, the single crystal ingot 8 can be grown under the seed crystal 14 by pulling the seed crystal 14 while rotating the pulling shaft 7 and the quartz crucible 2.

In order to increase the diameter of the single crystal, that is, to increase the diameter of the crystal rod 8 to about 200 mm, which is considerably larger than that of the conventional single crystal rod, the inner diameter of the quartz crucible 2 is correspondingly increased. Must be increased to, for example, 500 mm or more to increase the amount of silicon melt 6. However,
By doing so, the convection 9 of the silicon melt 6 becomes irregular, the concentration of impurities carried by the convection and the melt temperature on the crystal growth surface become unstable, and a large-diameter silicon single crystal can be stably manufactured. It will be difficult. Therefore, it is necessary to control the convection of the melt 6 to an appropriate one by some means.

Therefore, as the control means, as shown in FIG. 5, electromagnets 21 and 22 are provided outside the pulling chamber 1 so as to face each other with the crucible 2 interposed therebetween, and the melt 6 is melted by these electromagnets.
HM that pulls the single crystal ingot 8 while applying a horizontal magnetic field to the
It is known that the CZ method is used.

[0006]

In the apparatus of FIG. 5, the convection state of the silicon melt 6 in the crucible is improved by applying the horizontal magnetic field, but it is sufficient to apply the horizontal magnetic field as the diameter of the crucible becomes larger. The present inventors have revealed that such an effect cannot be obtained, and that the distribution of the impurity concentration in the crystal becomes non-uniform in the growth direction of the single crystal, that is, the impurity concentration easily changes.

At present, in the step of pulling up a silicon single crystal, examples of impurities whose amount in the silicon single crystal is controlled include interstitial oxygen and atoms called dopants that determine the carrier concentration of the silicon single crystal. To be
The fact that the oxygen concentration varies to a high concentration or a low concentration in a minute range becomes a base for forming a crystal defect in the device process, for example, in the case of a high concentration, or when it is a low concentration, the gettering of heavy metal impurities is insufficient, resulting in a device defect. The adverse effect is that the properties and yield are reduced.

The present invention has been made under such a background, and an object thereof is to store a large amount of silicon melt in a quartz crucible having a large diameter in an apparatus for producing a single crystal by the HMCZ method. From the above, it is an object of the present invention to provide a silicon single crystal production apparatus and a production method capable of stably producing a large-diameter silicon single crystal in which the uniformity of the impurity concentration, especially the oxygen concentration in the crystal is improved.

In order to solve the above problems, the present inventors have conducted various experiments, and as a result, the length of the slit 4a, which is the heat generating portion of the resistance heater 4, in FIG. He found that it was closely related to non-uniformity. That is, when the length of the slit 4a is close to the inner diameter of the crucible 2, the entire silicon melt is heated to a substantially uniform temperature, and the temperature gradient in the depth direction of the melt is reduced. It has been found that it is difficult to control the directionality and uniformity to desired values, and as a result, the oxygen concentration becomes nonuniform.

[0010]

In the apparatus for producing a silicon single crystal of the present invention, a cylindrical crucible having a bottom and a resistance heater surrounding the crucible are provided in a pulling chamber to form an electromagnet of a magnetic field applying apparatus. A coil outside the pulling chamber, and coaxially opposed to each other with the crucible sandwiched, of a silicon single crystal pulling a large diameter single crystal from the melt while applying a horizontal magnetic field to the silicon melt in the crucible. In the manufacturing apparatus, as shown in FIG. 1, a resistance heater 4 having a length Ls of a slit 4a, which is a heat generating portion, of 0.3 times or more and 0.7 times or less of an inner diameter R of the crucible 2 is provided. It is characterized by that.

By limiting the length Ls of the slit 4a to the above range, a temperature gradient is generated in the silicon melt in the vicinity of the crystal growth interface. The concentration of impurities in the silicon single crystal, especially the continuity of interstitial oxygen concentration in the crystal growth direction, is improved, and the micro oxygen concentration distribution in the crystal growth direction becomes uniform, resulting in high quality. The silicon wafer can be stably manufactured. If the length Ls is less than 0.3 times the inner diameter R of the crucible 2, the heating portion is too short and it is difficult to maintain the entire silicon in the crucible in a molten state. Since the length is the same as the conventional one, the above-mentioned problem occurs.

Conventionally, in the silicon single crystal manufacturing apparatus shown in FIG. 5, a silicon single crystal manufacturing method in which the amount of silicon melt in the crucible 2, and hence its depth, decreases with the elapse of the single crystal pulling time is mainly used. Has been adopted. In order to adopt this pulling method in the manufacturing apparatus of the present invention, it is preferable that the resistance heater 4 and the crucible 2 can be moved up and down by an elevating mechanism (not shown). In this case, as shown in FIG. 1, the vertical center Cs of the slit 4a of the resistance heater 4 at the start of crystal pulling.
Is located below the surface Sm of the silicon melt 6, and it is desirable to offset the drop of the silicon melt surface due to the decrease of the amount of silicon melt in the crucible due to the pulling of the silicon single crystal by the rise of the crucible 2. .

The apparatus and method for producing a silicon single crystal according to the present invention is not limited to the case of pulling one single crystal from one crucible by the usual CZ method, but a so-called multiple CZ (RCCZ method: Recharge CZ method), Or continuous charge pulling method (CCCZ method: Continuous Charging)
It can also be applied to the case of pulling up from the CZ method). Normal C
In the Z method and the RCCZ method, the depth of the melt in the crucible decreases as the crystal pulling time elapses. In the CCCZ method, the depth of the melt in the crucible during the crystal pulling is substantially the same as the depth at the start of pulling and is constant.

[0014]

[Test Example] A test example of pulling a silicon single crystal by the apparatus of FIG. 1 will be described. Test Examples 1 to 3 FIG. 1 is a cross-sectional view showing the main structure of the silicon single crystal manufacturing apparatus, and the structure around the crucible is the same as that of the conventional apparatus of FIG. In this silicon single crystal manufacturing apparatus, the length Ls of the slit 4a of the resistance heater 4 is set to the test examples 1, 2, 3
, 0.3 times, 0.45 times, and 0.
8 times. All other conditions (specifications of the pulling device and pulling method / conditions) were common to Test Examples 1, 2, and 3. The resistance heater 4 and the crucible 2 can be moved up and down by an elevating mechanism. Using the apparatus shown in FIG. 1, a silicon single crystal was pulled by the RCCZ method. In this single crystal pulling method, the depth of the melt in the crucible decreases with time.

Main specifications of the pulling device (1) Crucible inner diameter R: about 586 mm (2) Crucible depth: about 408 mm (3) Heater outer diameter: about 750 mm (4) Electromagnet coil diameter Rc (Fig. 5): about 600
mm (5) Distance between coils of electromagnet Dc (see FIG. 5): about 1
800 mm

Pulling Method / Conditions (1) Target diameter of straight body of silicon single crystal × length:
8 inches (about 210 mm) x 700 mm (2) Crucible rotation speed: 0.5 rpm (3) Seed crystal rotation speed: 16 rpm (opposite to crucible rotation direction) (4) Silicon melt in crucible at the start of pulling Depth: about 260 mm (5) Depth of silicon melt in the crucible at the end of pulling: about 180 mm (6) Strength distribution of the magnetic field at the point on the central axis l of the crucible (concentration line distribution of the magnetic field) is 4000 gauss at the center of the crucible (at half the depth of the crucible), 1 above the center of the crucible
At a position of 50 mm, 3750 gauss (7) Others: While supplying an appropriate amount of inert gas (Ar), the pressure inside the pulling chamber was maintained at a reduced pressure of 50 mbar.

First, the temperature distribution on the central axis of the crucible was measured with a thermocouple in a state where polycrystalline silicon was not put in the crucible. The results are shown in FIG. In this figure, the horizontal axis indicates the position on the central axis of the crucible (in the vertical direction), and the resistance heater 4
The vertical center Cs of the slit 4a is zero.
A curve A shows the result when the slit length is 0.8 times the crucible inner diameter, and a curve B shows the result when the slit length is 0.3 times the crucible inner diameter. The above two types of resistance heaters were provided so that the upper ends of the slits were at the same height.

As is clear from the comparison between the curves A and B, the temperature distribution is gentle when the slit length is long and steep when the slit length is short. Therefore, by providing a resistance heater with a short slit length,
It can be seen that the convection of the melt in the crucible can be controlled to be desirable by utilizing the temperature gradient on the central axis of the crucible. Further, a desired convection state can be formed by setting an appropriate vertical gap between the resistance heater and the melt in the crucible, whereby a silicon single crystal of desired quality can be manufactured.

After the temperature distribution was measured, the silicon single crystal was pulled under the above conditions in Test Examples 1 and 3. Then, the oxygen concentration distribution in the crystal growth direction of these silicon single crystals was measured. The results are shown in FIG. The micro oxygen concentration distribution is 250 μm in the crystal growth direction using a beam size of 100 × 200 μm by the micro FT-IR method.
Measured in steps. In FIGS. 3A and 3B, the “distance on the test piece” on the horizontal axis corresponds to the distance in the growth direction of the grown single crystal. As for the test piece, the crystal straight body 20 to 24 cm is vertically cut, and the thickness is 2 mm and the width is 20 m from the center of the crystal axis.
Cut out as m.

As is clear from FIG. 3, by setting the slit length of the resistance heater to be 0.7 times or less of the inner diameter of the crucible, microscopic variation in oxygen concentration in the crystal growth direction is reduced, and the oxygen concentration in the crystal growth direction is reduced. The continuity of interstitial oxygen concentration and carrier concentration can be improved.

Since the oxygen concentration distribution in the growth direction of the pulled single crystal is reflected as it is on the wafer produced from this single crystal, it is desirable that the variation in oxygen concentration is as small as possible. Specifically, the difference between the maximum value and the minimum value on the test piece at a distance of 4 cm in the single crystal growth direction is 1.0 ppma (JEIDA) or less, and particularly 0.
It is preferably 5 ppma (JEIDA) or less.

FIG. 4 is a graph showing the results of Test Examples 1 to 3, showing the ratio of the heater slit length to the inner diameter of the crucible,
Microscopic variation in oxygen concentration (unit: ppma-JEI
DA). However, the above-mentioned variation is a difference between the maximum value and the minimum value in a portion on the test piece at a distance of 4 cm in the single crystal growth direction. From the result of FIG.
In the conventional device, the difference is about 1.3 ppma, whereas according to the present invention, the difference is about 0.4 to 0.8 ppma.
You can see that it is suppressed to.

[0023]

As is apparent from the above description, in the present invention, the length of the slit of the resistance heater is set to 0.3 times or more and 0.7 times or less of the inner diameter of the silicon single crystal pulling crucible. By doing so, a temperature gradient is generated in the silicon melt in the vicinity of the crystal growth interface, so that it becomes possible to control the convection to an appropriate one in combination with the effect of the horizontal magnetic field applied to this, and it becomes possible to The impurity concentration, especially the continuity of the interstitial oxygen concentration in the crystal growth direction is improved, and a high-quality silicon wafer can be stably manufactured. Further, by appropriately controlling the vertical relative position of the resistance heater and the silicon melt in the crucible, the impurity concentration in the silicon single crystal can be controlled to a desired one, and various quality requirements can be met. Can be dealt with accurately.

[Brief description of the drawings]

FIG. 1 is a schematic vertical cross-sectional view showing a main part structure of a silicon single crystal manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is measured in an empty crucible in a test example.
It is a graph which shows the temperature distribution on a crucible center axis.

FIG. 3 is a graph showing an oxygen concentration distribution in a crystal growth direction in silicon single crystals obtained in Test Examples 1 and 3.

FIG. 4 is a graph showing the results of Test Examples 1 to 3, showing the relationship between the ratio of the heater slit length to the inner diameter of the crucible and the variation in micro oxygen concentration in the obtained silicon single crystal.

FIG. 5 is a schematic vertical sectional view showing a conventional example of a silicon single crystal manufacturing apparatus by the HMCZ method.

[Explanation of symbols]

 1 Pulling Chamber 2 Quartz Crucible 4 Resistance Heater 4a Slit 6 Silicon Melt 8 Single Crystal Rod 9 Convection of Silicon Melt 21,22 Electromagnet Cc Electromagnetic Coil Center Cm Cm Half Position of Silicon Melt Depth Cs Center of vertical direction of slit Dc Distance between coils of electromagnet Dm Depth of silicon melt Ls Length of slit R Inner diameter of crucible Rc Coil diameter of electromagnet Sm Surface of silicon melt

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Izumi Fusegawa, Izumi Fusegawa, Saidai-mura, Nishishirakawa-gun, Fukushima, Odaira, Odaira 150, Odaira, Shirakawa Plant, Shin-Etsu Semiconductor Co., Ltd. Ohira 150 Shin-Etsu Semiconductor Co., Ltd. Shirakawa factory

Claims (3)

[Claims] 1. A cylindrical crucible having a bottom and a resistance heater surrounding the crucible are provided in a pulling chamber, and a coil constituting an electromagnet of a magnetic field applying device is provided outside the pulling chamber and with the crucible sandwiched therebetween. In a device for producing a silicon single crystal that is coaxially arranged oppositely and pulls a large diameter single crystal from the melt while applying a horizontal magnetic field to the silicon melt in the crucible, the resistance heater is a slit that is a heat generating part. Is 0.3 times or more and 0.7 times or less of the inner diameter of the crucible, the apparatus for producing a silicon single crystal. 2. The apparatus for producing a silicon single crystal according to claim 1, wherein the resistance heater and the crucible can be raised and lowered by a raising and lowering mechanism. 3. A method for producing a silicon single crystal according to claim 2, wherein the amount of silicon melt in the crucible decreases with the elapse of the single crystal pulling time. , At the start of crystal pulling, the vertical center of the slit of the resistance heater is located below the surface of the silicon melt,
Manufacture of a silicon single crystal characterized by raising and lowering the resistance heating heater itself while offsetting a drop in the silicon melt surface due to a decrease in the amount of silicon melt in the crucible due to pulling of the silicon single crystal by raising the crucible. Method.