JPH0543385A - Carbon heater for furnace for pulling up si single crystal - Google Patents

Carbon heater for furnace for pulling up si single crystal

Info

Publication number
JPH0543385A
JPH0543385A JP20580091A JP20580091A JPH0543385A JP H0543385 A JPH0543385 A JP H0543385A JP 20580091 A JP20580091 A JP 20580091A JP 20580091 A JP20580091 A JP 20580091A JP H0543385 A JPH0543385 A JP H0543385A
Authority
JP
Japan
Prior art keywords
heater
single crystal
carbon heater
carbon
segment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20580091A
Other languages
Japanese (ja)
Inventor
Osamu Suzuki
修 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP20580091A priority Critical patent/JPH0543385A/en
Publication of JPH0543385A publication Critical patent/JPH0543385A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To provide a carbon heater for a furnace for pulling up an Si single crystal, having sufficient mechanical strength and capable of easily and arbitrarily changing the temperature distribution. CONSTITUTION:The objective heater is composed of a heater main body 1 having cylindrical shape and furnished with alternately formed slits extending from the top edge downward and slits extending from the bottom upward and terminals 3 integrally attached to the heater main body 1. Through-holes 4 are opened at desired positions on each heater segment between two adjacent slits 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はSi単結晶引上炉に用い
られる炭素ヒーターの改良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvement of a carbon heater used in a Si single crystal pulling furnace.

【0002】[0002]

【従来の技術】Si単結晶は主にチョクラルスキー法に
より製造されている。この方法は、引上炉内に回転可能
に支持されたルツボに多結晶シリコン原料を入れ、ルツ
ボ外周に設けられた円筒状のヒーターにより加熱して多
結晶シリコン原料を溶融させ、このシリコン融液に種結
晶を浸して引上げることにより、インゴット状のシリコ
ン単結晶を得るものである。
2. Description of the Related Art Si single crystals are mainly manufactured by the Czochralski method. In this method, a polycrystalline silicon raw material is placed in a crucible rotatably supported in a pulling furnace, and the polycrystalline silicon raw material is melted by heating with a cylindrical heater provided on the outer periphery of the crucible. A seed crystal is immersed in and pulled up to obtain an ingot-shaped silicon single crystal.

【0003】Si単結晶引上炉のヒーターとしては、図
5に示すように、円筒状の形状をなし、上端から下端へ
向かうかまたは下端から上端へ向かうスリット2とが交
互に設けられたヒーター本体1、およびこのヒーター本
体1と一体に設けられた2つの端子3を有する炭素ヒー
ターが用いられている。この炭素ヒーターの原理は、2
つの端子3間に電圧を印加して、ヒーター本体1の隣接
する2つのスリット2に挟まれた各ヒーターセグメント
を順次上下に流れる電流によって抵抗加熱するものであ
る。
As a heater for a Si single crystal pulling furnace, as shown in FIG. 5, a heater having a cylindrical shape and slits 2 extending from the upper end to the lower end or from the lower end to the upper end are alternately provided. A carbon heater having a main body 1 and two terminals 3 provided integrally with the heater main body 1 is used. The principle of this carbon heater is 2
A voltage is applied between two terminals 3, and each heater segment sandwiched by two adjacent slits 2 of the heater body 1 is resistance-heated by an electric current flowing vertically.

【0004】このような炭素ヒーターを用い、ルツボ内
のシリコン融液の温度分布を制御するために、垂直方向
で所望の温度分布を得ることが要求される場合がある。
例えば、ヒーター上部に温度ピークが存在するように温
度分布を変化させる場合、従来は炭素ヒーターを図3、
図4に示すような構造に加工していた。図3はセグメン
トの上部の肉厚を減少させたものである。また、図4は
セグメントの上部でスリットの幅を拡げたものである。
いずれの炭素ヒーターも、セグメント上部の断面積を減
少させて電流密度を増加させることにより、ヒーター上
部に温度ピークが存在するように温度分布を変化させる
ものである。
In order to control the temperature distribution of the silicon melt in the crucible using such a carbon heater, it is sometimes required to obtain a desired temperature distribution in the vertical direction.
For example, when the temperature distribution is changed so that the temperature peak exists on the upper part of the heater, the conventional carbon heater is shown in FIG.
The structure was processed as shown in FIG. FIG. 3 shows a reduction in the wall thickness at the top of the segment. Further, in FIG. 4, the width of the slit is expanded at the upper part of the segment.
In any of the carbon heaters, the temperature distribution is changed so that the temperature peak exists on the upper part of the heater by decreasing the cross-sectional area of the upper part of the segment and increasing the current density.

【0005】[0005]

【発明が解決しようとする課題】しかし、図3または図
4のようにセグメントの肉厚を減少させたり、スリット
幅を拡げた炭素ヒーターでは、機械的強度が弱くなり、
温度分布を任意に変化させることが困難であるという問
題があった。
However, the carbon heater having the segment thickness reduced or the slit width widened as shown in FIG. 3 or FIG.
There is a problem that it is difficult to arbitrarily change the temperature distribution.

【0006】本発明は前記問題点を解決するためになさ
れたものであり、機械的強度が保持でき、しかも温度分
布を任意に変化させることが容易なSi単結晶引上炉用
炭素ヒーターを提供することを目的とする。
The present invention has been made to solve the above problems, and provides a carbon heater for a Si single crystal pulling furnace which can maintain mechanical strength and can easily change the temperature distribution arbitrarily. The purpose is to

【0007】[0007]

【課題を解決するための手段】本発明のSi単結晶引上
炉用炭素ヒーターは、円筒状の形状をなし、上端から下
端へ向かうスリットと下端から上端へ向かうスリットと
が交互に設けられた炭素ヒーターにおいて、隣接する2
つのスリットに挟まれたヒーターセグメントの所望位置
に貫通孔を設けたことを特徴とするものである。
The carbon heater for a Si single crystal pulling furnace of the present invention has a cylindrical shape, and slits extending from the upper end to the lower end and slits extending from the lower end to the upper end are alternately provided. Two adjacent carbon heaters
A through hole is provided at a desired position of the heater segment sandwiched by the two slits.

【0008】[0008]

【作用】本発明のSi単結晶引上炉用炭素ヒーターで
は、ヒーターセグメントに小さな貫通孔を設けることに
より、ヒーターセグメントの断面積を減少させ、垂直方
向の温度分布を変化させる。貫通孔は小さなものでよい
ので、ヒーターの機械的強度がそれほど低下することが
ない。また、貫通孔の加工は容易であるので、貫通孔を
ヒーターセグメントの所望の任意位置に設けることがで
き、垂直方向で所望の温度分布を得ることができる。
In the carbon heater for a Si single crystal pulling furnace of the present invention, a small through hole is provided in the heater segment to reduce the cross-sectional area of the heater segment and change the temperature distribution in the vertical direction. Since the size of the through hole may be small, the mechanical strength of the heater does not deteriorate so much. Further, since the through hole can be easily processed, the through hole can be provided at a desired arbitrary position of the heater segment, and a desired temperature distribution can be obtained in the vertical direction.

【0009】[0009]

【実施例】以下、本発明の実施例を図面を参照して説明
する。
Embodiments of the present invention will be described below with reference to the drawings.

【0010】図1および図2は本発明に係る炭素ヒータ
ーの正面図である。図1および図2の炭素ヒーターはい
ずれも、外径530mm、内径470mm、高さ400
mmの円筒状の形状をなし、上端から下端へ向かうスリ
ット2と下端から上端へ向かうスリット2とが交互に設
けられたヒーター本体1、およびこのヒーター本体1と
一体に設けられた2つの端子3を有している。
1 and 2 are front views of a carbon heater according to the present invention. Each of the carbon heaters of FIGS. 1 and 2 has an outer diameter of 530 mm, an inner diameter of 470 mm, and a height of 400.
mm, a heater main body 1 having slits 2 extending from the upper end to the lower end and slits 2 extending from the lower end to the upper end alternately, and two terminals 3 integrally provided with the heater main body 1. have.

【0011】図1の炭素ヒーター(実施例1)では、ヒ
ーター本体1の隣接する2つのスリット2に挟まれた各
ヒーターセグメントの下端から270mmおよび300
mm(上端から130mmおよび100mm)の位置
に、10mm径の貫通孔4が設けられている。このよう
な位置に貫通孔4を設けてセグメントの断面積を減少さ
せることにより、ヒーター上部に温度ピークが存在する
ように温度分布を変化させることを目標としている。
In the carbon heater (Example 1) of FIG. 1, 270 mm and 300 mm from the lower end of each heater segment sandwiched by two adjacent slits 2 of the heater body 1.
A through hole 4 having a diameter of 10 mm is provided at a position of mm (130 mm and 100 mm from the upper end). The through hole 4 is provided at such a position to reduce the cross-sectional area of the segment, so that the temperature distribution is changed so that the temperature peak exists on the upper part of the heater.

【0012】図2の炭素ヒーター(実施例2)では、ヒ
ーター本体1の隣接する2つのスリット2に挟まれた各
ヒーターセグメントの下端から100mmおよび130
mmの位置に、10mm径の貫通孔4が設けられてい
る。このような位置に貫通孔4を設けてセグメントの断
面積を減少させることにより、ヒーター下部に温度ピー
クが存在するように温度分布を変化させることを目標と
している。これらと比較するために、従来の標準的な炭
素ヒーターとして図5に示すものを用いた。
In the carbon heater (Example 2) of FIG. 2, 100 mm and 130 mm from the lower end of each heater segment sandwiched by two adjacent slits 2 of the heater body 1.
A through hole 4 having a diameter of 10 mm is provided at a position of mm. The through hole 4 is provided at such a position to reduce the cross-sectional area of the segment, so that the temperature distribution is changed so that the temperature peak exists in the lower portion of the heater. For comparison with these, the conventional standard carbon heater shown in FIG. 5 was used.

【0013】これら3種の炭素ヒーターに通電して、垂
直方向における温度分布を調べた結果を図6に示す。図
6から明らかなように、従来の標準的な炭素ヒーターと
比較して、それぞれ実施例1ではヒーター上部に温度ピ
ークが、実施例2ではヒーター下部に温度ピークが存在
していることがわかる。
FIG. 6 shows the results of examining the temperature distribution in the vertical direction by energizing these three types of carbon heaters. As is clear from FIG. 6, in comparison with the conventional standard carbon heater, the temperature peak exists in the upper part of the heater in Example 1 and the temperature peak exists in the lower part of the heater in Example 2, respectively.

【0014】[0014]

【発明の効果】以上詳述したように本発明のSi単結晶
引上炉用炭素ヒーターでは、小さな貫通孔を設けること
により、ヒーターセグメントの断面積を減少させ、垂直
方向の温度分布を変化させるので、ヒーターの機械的強
度がそれほど低下することがなく、しかも貫通孔をヒー
ターセグメントの所望の任意位置に設けることにより、
垂直方向で所望の温度分布を得ることができる。
As described above in detail, in the carbon heater for Si single crystal pulling furnace of the present invention, the cross-sectional area of the heater segment is reduced and the temperature distribution in the vertical direction is changed by providing the small through hole. Therefore, the mechanical strength of the heater does not decrease so much, and by providing the through hole at a desired arbitrary position of the heater segment,
A desired temperature distribution can be obtained in the vertical direction.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例1における炭素ヒーターの正面
図。
FIG. 1 is a front view of a carbon heater according to a first embodiment of the present invention.

【図2】本発明の実施例2における炭素ヒーターの正面
図。
FIG. 2 is a front view of a carbon heater according to a second embodiment of the present invention.

【図3】従来の改良型炭素ヒーターの正面図。FIG. 3 is a front view of a conventional improved carbon heater.

【図4】従来の他の改良型炭素ヒーターの正面図。FIG. 4 is a front view of another conventional improved carbon heater.

【図5】従来の標準的な炭素ヒーターの正面図。FIG. 5 is a front view of a conventional standard carbon heater.

【図6】本発明の実施例1、実施例2および従来の標準
的な炭素ヒーターについて、垂直方向の温度分布を示す
図。
FIG. 6 is a diagram showing a temperature distribution in the vertical direction in Examples 1 and 2 of the present invention and a conventional standard carbon heater.

【符号の説明】[Explanation of symbols]

1…ヒーター本体、2…スリット、3…端子、4…貫通
孔。
1 ... Heater main body, 2 ... Slit, 3 ... Terminal, 4 ... Through hole.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 円筒状の形状をなし、上端から下端へ向
かうスリットと下端から上端へ向かうスリットとが交互
に設けられた炭素ヒーターにおいて、隣接する2つのス
リットに挟まれたヒーターセグメントの所望位置に貫通
孔を設けたことを特徴とするSi単結晶引上炉用炭素ヒ
ーター。
1. A carbon heater having a cylindrical shape in which slits extending from an upper end to a lower end and slits extending from a lower end to an upper end are alternately provided, and a desired position of a heater segment sandwiched between two adjacent slits. A carbon heater for a Si single crystal pulling furnace, characterized in that a through hole is provided in the.
JP20580091A 1991-08-16 1991-08-16 Carbon heater for furnace for pulling up si single crystal Pending JPH0543385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20580091A JPH0543385A (en) 1991-08-16 1991-08-16 Carbon heater for furnace for pulling up si single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20580091A JPH0543385A (en) 1991-08-16 1991-08-16 Carbon heater for furnace for pulling up si single crystal

Publications (1)

Publication Number Publication Date
JPH0543385A true JPH0543385A (en) 1993-02-23

Family

ID=16512894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20580091A Pending JPH0543385A (en) 1991-08-16 1991-08-16 Carbon heater for furnace for pulling up si single crystal

Country Status (1)

Country Link
JP (1) JPH0543385A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09183692A (en) * 1995-12-28 1997-07-15 Shin Etsu Handotai Co Ltd Apparatus for producing silicon single crystal and method therefor
WO1999063133A1 (en) * 1998-06-05 1999-12-09 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
WO2000000676A1 (en) * 1998-06-26 2000-01-06 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus and its method of use
US6053974A (en) * 1997-09-30 2000-04-25 Memc Electronic Materials, Inc. Heat shield for crystal puller
US6285011B1 (en) 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
US6554898B2 (en) 2001-06-26 2003-04-29 Memc Electronic Materials, Inc. Crystal puller for growing monocrystalline silicon ingots
WO2004061166A1 (en) * 2002-12-27 2004-07-22 Shin-Etsu Handotai Co., Ltd. Graphite heater for producing single crystal, single crystal productin system and single crystal productin method
JP2007284343A (en) * 2006-04-12 2007-11-01 Schott Ag Device and method for production of single crystal or polycrystalline material, in particular polycrystalline silicon
JP2010254487A (en) * 2009-04-21 2010-11-11 Sumco Corp Method for growing single crystal
CN103160913A (en) * 2011-12-18 2013-06-19 洛阳金诺机械工程有限公司 Temperature gradient controlling device of crystal growth and method thereof
JP2014062004A (en) * 2012-09-20 2014-04-10 Ibiden Co Ltd Graphite heater
KR101494522B1 (en) * 2013-04-30 2015-02-17 웅진에너지 주식회사 Heater for single crystal silicone grower
JP2016098121A (en) * 2014-11-18 2016-05-30 住友電気工業株式会社 Apparatus for producing silicon carbide single crystal
CN106637387A (en) * 2015-10-30 2017-05-10 西安通鑫半导体辅料有限公司 Heater for monocrystal straightening and drawing and monocrystal straightening and drawing method

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09183692A (en) * 1995-12-28 1997-07-15 Shin Etsu Handotai Co Ltd Apparatus for producing silicon single crystal and method therefor
US6053974A (en) * 1997-09-30 2000-04-25 Memc Electronic Materials, Inc. Heat shield for crystal puller
WO1999063133A1 (en) * 1998-06-05 1999-12-09 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
US6093913A (en) * 1998-06-05 2000-07-25 Memc Electronic Materials, Inc Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections
WO2000000676A1 (en) * 1998-06-26 2000-01-06 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus and its method of use
US6503322B1 (en) 1998-06-26 2003-01-07 Memc Electronic Materials, Inc. Electrical resistance heater and method for crystal growing apparatus
JP2003522086A (en) * 1998-06-26 2003-07-22 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Electric resistance heater for crystal growth apparatus and method of using the same
US6285011B1 (en) 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
US6554898B2 (en) 2001-06-26 2003-04-29 Memc Electronic Materials, Inc. Crystal puller for growing monocrystalline silicon ingots
US6663709B2 (en) 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
WO2004061166A1 (en) * 2002-12-27 2004-07-22 Shin-Etsu Handotai Co., Ltd. Graphite heater for producing single crystal, single crystal productin system and single crystal productin method
US7258744B2 (en) 2002-12-27 2007-08-21 Shin-Etsu Handotai Co., Ltd. Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal
JP2007284343A (en) * 2006-04-12 2007-11-01 Schott Ag Device and method for production of single crystal or polycrystalline material, in particular polycrystalline silicon
EP1857574A2 (en) * 2006-04-12 2007-11-21 Schott AG Device and method for generating one or multicrystalline materials, in particular multi-crystalline silicium
EP1857574A3 (en) * 2006-04-12 2007-12-05 Schott AG Device and method for growing crystals
US7597756B2 (en) 2006-04-12 2009-10-06 Schott Ag Device and method for the production of monocrystalline or multicrystalline materials, in particular multicrystalline silicon
JP4533398B2 (en) * 2006-04-12 2010-09-01 ショット アクチエンゲゼルシャフト Monocrystalline or polycrystalline material, especially polycrystalline silicon manufacturing apparatus and manufacturing method
JP2010254487A (en) * 2009-04-21 2010-11-11 Sumco Corp Method for growing single crystal
CN103160913A (en) * 2011-12-18 2013-06-19 洛阳金诺机械工程有限公司 Temperature gradient controlling device of crystal growth and method thereof
JP2014062004A (en) * 2012-09-20 2014-04-10 Ibiden Co Ltd Graphite heater
KR101494522B1 (en) * 2013-04-30 2015-02-17 웅진에너지 주식회사 Heater for single crystal silicone grower
JP2016098121A (en) * 2014-11-18 2016-05-30 住友電気工業株式会社 Apparatus for producing silicon carbide single crystal
CN106637387A (en) * 2015-10-30 2017-05-10 西安通鑫半导体辅料有限公司 Heater for monocrystal straightening and drawing and monocrystal straightening and drawing method
CN106637387B (en) * 2015-10-30 2019-12-17 西安通鑫半导体辅料有限公司 heater for pulling single crystal and pulling method

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