JPH09181124A - Semiconductor device, its mounting method and inspection method of mounting part - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable judging the quality of a mounting junction part of a semiconductor device having a plurality of protruding electrodes which are arranged in the row and the column directions and a substratum, by using simple optical inspection. SOLUTION: When a plurality of protruding electrodes 3 are arranged in the row and the column directions, the height of low protruding electrodes 3a arranged in the most outside row or column is set and formed to be about 50μm less than the height of high protruding electrodes 3b arranged inside the electrodes 3a. After the semiconductor device is mounted on and bonded to a board, the bonding state of the low protruding electrodes 3a arranged in the most outside row or column is optically inspected. When imperfect junction which is not yet bonded is not generated, it can be estimated that imperfect junction which is not yet bonded is not generated in the high protruding electrodes 3b arranged inside the electrodes 3a.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a semiconductor device, such as a semiconductor chip or a package containing the semiconductor chip, having a protruding electrode electrically connected to an electrode formed on a substrate, and the semiconductor device. The present invention relates to a method for mounting a device on a base body, and a method for inspecting a mounting joint between a protruding electrode of these semiconductor devices and an electrode on the base body.

[0002]

2. Description of the Related Art FIG. 6 is a perspective view of a conventional semiconductor device, and FIG. 7 is a sectional view taken along line AA of the conventional semiconductor device shown in FIG. A semiconductor chip 3 housed in the center of the package body 1 is a protruding electrode formed on the package body, and the protruding electrode 3 constitutes a group of protruding electrodes arranged in the row and column directions. It is formed around the semiconductor chip 2 in FIG. Here, the protruding electrode 3
Are formed on the package body 1 in a four-row ring shape so as to surround the semiconductor chip 2. 4 is a semiconductor chip 2
Is a wire for electrically connecting the electrode of 1 to the electrode of the package body 1.

A conventional semiconductor device is constructed as described above, and a mounting method of such a semiconductor device is described in, for example, September 1, 1995, published by Industrial Research Board, electronic material,
Vol 34, No. 9, P27 to P32. FIG. 8 is a cross-sectional process diagram for explaining a conventional method for mounting a semiconductor device on a substrate. In FIG.
Is a substrate such as a circuit board, 6 is an electrode formed on the substrate 1, and 7 is a solder paste which is a bonding material supplied onto the electrode 6.

First, as shown in FIG. 8A, a solder paste is applied onto the electrodes 6 of the substrate 5 by a method such as printing, so that the projecting electrodes 3 of the package body 1 and the electrodes 6 of the substrate 5 are separated from each other. Align so that they face each other. Next, FIG.
As shown in (b), after the semiconductor device is mounted on the substrate 5 in the aligned state, the solder paste 7 is heated to a temperature at which the solder of the solder paste 7 melts, and then cooled to obtain the solder paste. Protruding electrode 3 through 7
And the electrode 6 are electrically connected, and the semiconductor device is fixed to the substrate 1.

[0005]

However, in the above-described method of mounting a semiconductor device, a predetermined amount of solder paste 7 is supplied onto a large number of electrodes 6 of the substrate 5 by a printing method or the like. The height of the supplied solder paste 7 varies from the set value. Due to the variation in the height of the solder paste 7, a bonding failure will occur between the protruding electrode 3 of the package body 1 and the electrode 6 of the substrate 5. That is, when the printing height of the solder paste 7 is higher than the set value, the solder paste 7 comes into contact with an adjacent electrode and a short circuit defect occurs. On the contrary, when the print height of the solder paste 7 is lower than the set value, unbonding failure occurs.

The above-mentioned bonding failure may occur at any of the protruding electrodes 3 formed on the package body 1. Further, in the above-described electrode short-circuit failure, it is possible to find relatively easily by electrically inspecting a circuit, but unbonded electrode failure can be found only by electrical inspection for the following reasons. Can not.

FIG. 9 is a cross-sectional view showing an example of a joined portion in a good joined state and an unjoined defective state. In this figure, a portion A indicated by a circle in the drawing forms a fillet when the protruding electrode 3 and the solder paste 7 are wetted, and the electrode 6 of the substrate 5 and the protruding electrode 3 of the package body 1 are formed.
Is a joint portion in which the protruding electrode 3 and the solder paste 7 of the package body 1 are completely separated from each other, and C is a portion where the protruding electrode 3 and the solder paste 7 are in contact with each other. However, the protrusion electrode 3 and the solder paste 7 do not wet and a fillet is not formed, and it is an incomplete joint which cannot be completely judged as a poor joint B or a good joint A.

In the above-mentioned completely unbonded defective joint B, it is possible to easily determine the unbonded defective by electrical inspection as described above, but in the defective joint C it is judged to be electrically good. In some cases, it is not always judged as defective. However, in such a case, although the desired electrical characteristics are exhibited in the initial stage of use, the protruding electrode 3 and the solder paste 7 are separated from each other by a slight strain or the like,
The circuit is easily broken, and the reliability of the semiconductor device is reduced.

Therefore, the quality of the bonding state of the electrode bonding portion cannot be judged only by the electrical inspection, but should be judged also by the bonding shape of the bonding portion. However, when mounting the package body 1 having a large number of protruding electrodes 3 arranged in the row and column directions on the substrate 5, the protruding electrodes 3 formed on the outermost peripheral side of the package main body 1 are not formed. It was impossible to observe the shape of the joint from the outside.

Although it is possible to inspect the shape of the joint of the protruding electrode 3 provided inside by using an X-ray CT apparatus or the like, this X-ray CT apparatus is expensive and the inspection time is long. It took a long time, which caused a high inspection cost.

The present invention has been made to solve the above problems, and determines the quality of a mounting joint between a semiconductor device having a plurality of protruding electrodes arranged in the row and column directions and a substrate by a simple optical inspection. It is an object of the present invention to provide a structure of a semiconductor device that can be manufactured, and a method of mounting the semiconductor device and a method of inspecting a mounting joint portion between the semiconductor device and a substrate.

[0012]

According to a first aspect of the present invention, a semiconductor device has a plurality of protruding electrodes electrically connected to electrodes formed on a substrate through a bonding material in the row and column directions. In a semiconductor device having a group of protruding electrodes arranged individually, the height of the protruding electrodes arranged in the outermost row or column of the protruding electrode group is higher than the height of the protruding electrodes arranged inside thereof. It is characterized by being lower than that.

In the semiconductor device according to the second aspect of the present invention, a plurality of projecting electrodes electrically connected to each other through the bonding material supplied on the electrodes formed on the base are arranged in the row and column directions. In a semiconductor device having a group of protruding electrodes arranged individually, the height of the protruding electrodes arranged in the outermost row or column of the protruding electrode group is higher than the height of the protruding electrodes arranged inside thereof. And the difference in height is larger than the variation in the height of the supplied bonding material.

Further, in the semiconductor device according to claim 3 of the present invention, the protruding electrode electrically connected to the electrode formed on the substrate through the bonding material supplied by the plating method,
In a semiconductor device having a plurality of protruding electrode groups arranged in the row and column directions, the height of the protruding electrodes arranged in the outermost row or column of the protruding electrode group is arranged inside thereof. Further, it is characterized in that it is lower than the height of the above-mentioned projection electrode and the difference in height is larger than 2 μm.

According to a fourth aspect of the present invention, there is provided a method of mounting a semiconductor device, wherein an outermost row of the electrode group of a base body on which an electrode group formed by arranging a plurality of electrodes in the row and column directions is formed or Supplying the bonding material to the electrode group so that the height of the bonding material supplied on the electrodes arranged in rows is lower than the height of the bonding material supplied on the electrodes arranged inside thereof; ,
The electrodes of the substrate on which the bonding material is arranged are aligned with the projection electrodes of the semiconductor device having the projection electrode group formed by arranging a plurality of projection electrodes in the row and column directions, respectively. After that, the semiconductor device and the base body are brought close to each other until the low-height bonding material on the electrodes arranged in the outermost row or column of the electrode group comes into contact with the protruding electrodes, and the bonding material is interposed. And a step of bringing the electrode group on the base body into contact with the protruding electrode group of the semiconductor device and joining the semiconductor device to the base body.

Further, according to a fifth aspect of the present invention, in the method for mounting a semiconductor device, the height of the bonding material supplied on the electrodes arranged in the outermost row or column of the electrode group of the base body and the height of the inside thereof are set. Characteristically, the bonding material is supplied such that the difference from the height of the bonding material supplied on the arranged electrodes is larger than the variation amount of the height of the bonding material generated when the bonding material is supplied. Is.

According to a sixth aspect of the present invention, there is provided a method of mounting a semiconductor device, wherein a bonding material is supplied onto the electrodes by a plating method and the electrodes are arranged on the outermost row or column of the electrode group of the base. Characteristically, the bonding material is supplied by a plating method so that the difference between the height of the bonding material supplied and the height of the bonding material supplied on the electrode arranged inside is larger than 2 μm. Is.

A semiconductor device according to a seventh aspect of the present invention is formed by arranging a plurality of protruding electrodes electrically connected to the electrodes formed on the base body through a bonding material in the row and column directions. In a semiconductor device having a protruding electrode group, when observing from a vertical direction with respect to an alignment direction of the protruding electrodes arranged on the outermost side of the protruding electrode group in the plane in which the protruding electrode group is arranged, It is characterized in that it has a projection electrode group in which the projection electrodes are arranged so that at least a part of all the projection electrodes arranged inside thereof can be observed.

According to an eighth aspect of the present invention, there is provided a method for mounting a semiconductor device, wherein a bonding material is provided on each of the electrodes of a substrate having an electrode group formed by arranging a plurality of electrodes in the row and column directions. The step of supplying, the electrode of the base body to which the bonding material is supplied, and the projection electrode of the semiconductor device according to claim 1, are aligned so as to face each other, and then the projection electrode group. The semiconductor device and the base body are brought close to each other until the protruding electrodes having a low height arranged in the outermost row or column of contact with the joint material, and the electrode group on the base body and the above-mentioned electrode group through the joint material. And a step of bringing the semiconductor device into contact with a projection electrode group of the semiconductor device and joining the semiconductor device to the base body.

According to a ninth aspect of the present invention, there is provided a method of mounting a semiconductor device, wherein a bonding material is provided on each of the electrodes of a substrate on which an electrode group formed by arranging a plurality of electrodes in the row and column directions is formed. The step of supplying, the electrode of the base body to which the bonding material is supplied, and the projection electrode of the semiconductor device according to claim 7 are aligned so as to face each other, and then the outermost row of the projection electrode group or The semiconductor device and the base body are brought close to each other until the low-height protruding electrodes arranged in rows come into contact with the bonding material, and the electrode group on the base body and the protruding electrode group of the semiconductor device are interposed via the bonding material. And a step of joining the semiconductor device to the base body.

According to a tenth aspect of the present invention, there is provided a semiconductor device mounting portion inspection method, wherein the semiconductor device is mounted on a substrate by the semiconductor device mounting method according to any one of the fourth to sixth, eighth and ninth aspects. In the method for inspecting the semiconductor device mounting portion after the exposure, an electrical inspection of the bonding state between the protruding electrode and the electrode and an optical inspection of the bonding state between the protruding electrode group and the protruding electrode arranged on the outermost side of the electrode group and the electrode are performed. It is characterized in that the mounting portion is evaluated by performing inspection.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. The semiconductor device according to the first embodiment of the present invention will be described below. 1 is a sectional view of a semiconductor device according to a first embodiment of the present invention. In this figure,
Reference numeral 1 denotes a package body in which a semiconductor chip 2 (shown in FIG. 6) is housed. Reference numeral 3 denotes a protruding electrode formed on the package body 1 and made of, for example, solder. The protruding electrodes 3 are arranged in a plurality of rows and columns. Thus, a projecting electrode group is formed and is formed around the outer periphery of the semiconductor chip 2 in the package body 1. Here, the protruding electrode group is formed on the package body 1 in a four-row ring shape so as to surround the semiconductor chip 2.

3a is a low protruding electrode formed in the outermost column and row of this protruding electrode group and having a diameter of about 500 μm and a height of about 200 μm, and 3b is lower than this lower protruding electrode 3a. The high protruding electrodes are arranged in the inner columns and rows and are formed to have a height higher than the low protruding electrodes 3a by about 50 μm, that is, about 250 μm. The protruding electrodes 3a having a low height and the protruding electrodes 3b having a high height are basically formed to have the same size and height.

In the semiconductor device configured as described above, the arrangement of the protruding electrodes 3 on the package body 1 is almost the same as that shown in FIG. 6 described in the prior art, and the outermost rows and columns of the protruding electrode group are arranged. Means that the low protruding electrodes 3a are arranged, and the high protruding electrodes 3b are arranged in rows and columns inside thereof.

Next, a method of mounting the above-described semiconductor device on a substrate will be described with reference to FIG. 2A to 2D are cross-sectional views of manufacturing steps sequentially showing the steps of mounting a semiconductor device on a substrate. In this figure, 5 is a substrate, for example, a substrate such as a circuit board, 6 is an electrode made of, for example, copper formed on the substrate 1, and the electrodes 6 are arranged in the row and column directions so as to face the protruding electrodes 3. A plurality of electrode groups are arranged in each.
Reference numeral 7 is a solder paste, which is a bonding material that is supplied onto the electrode 6 to electrically connect and fix the electrode 6 of the substrate 5 and the protruding electrode 3 of the package body 1.

First, as shown in FIG. 2A, the solder paste 7 is formed on the electrodes 6 of the substrate 5 by, for example, a printing method.
Are supplied to align the protruding electrodes 3 of the package body 1 and the electrodes 6 of the substrate 5 with each other. Next, as shown in FIG. 2 (b), in a state where the alignment is performed,
The semiconductor device is mounted on the substrate 5, and is pushed until the low protruding electrode 3a of the package body 1 and the solder paste 7 come into contact with each other, and is heated to a temperature at which the solder of the solder paste 7 melts, for example, 200 ° C., and then cooled. By doing so, the protruding electrode 3 and the electrode 6 are connected via the solder paste 7.
And are electrically connected, and the semiconductor device is fixed to the substrate 1. Next, the bonding state between the protruding electrode 3 of the package body 1 and the solder paste 7 is evaluated by an electrical inspection and a simple optical inspection such as visual observation or image recognition from the outside.

In the mounting method of the semiconductor device described above, in the step of supplying the solder paste 7 by the printing method,
When the design value of the printing height of the solder paste 7 supplied by the printing method is 150 μm, the printing height of the solder paste 7 actually supplied is about 135 μm to about 1 μm.
It is known that there are variations in the range of 65 μm. That is,
A difference of about 30 μm occurs between the highest and lowest printing heights of the supplied solder paste 7. Further, in the step of mounting the package body 1 on the substrate 5, the protruding electrodes 3 of the package body 1 are pushed into the printed solder paste 7 by the mounting load. Since the low protruding electrode 3a arranged on the outermost periphery is lower than the high protruding electrode 3b arranged inside by 50 μm, in order to bring all the solder paste 7 and the protruding electrode 3 into contact with each other, The difference of about 50 μm must be pushed in further.

Therefore, if the protruding electrodes 3a of about 50 μm lower arranged on the outermost periphery are all in contact with the solder paste 7, the variation in the printing height of the solder paste 7 is about 30.
Since it is μm, the high protruding electrode 3b arranged inside thereof is
Will be joined regardless of the height variation of the supplied solder paste 7. That is, the substrate 5
In the state where the semiconductor device is mounted on the semiconductor device, unbonded defects occur in the low protruding electrodes 3a arranged on the outermost periphery of the protruding electrode group by optical inspection such as visual observation or image recognition from the outside of the semiconductor device, that is, the side direction. If not, no unbonded defect is generated even in the high protrusion electrode 3b which is arranged inside and is not observable. Therefore, the unbonded defect can be easily determined by a simple optical inspection. . Furthermore, a short circuit defect can be easily inspected by an electrical inspection. Therefore, the bonding state of all the electrodes can be determined by an optical inspection and an electrical inspection from the outside without using the X-ray CT apparatus, so that the inspection time can be shortened and the inspection cost can be suppressed.

In this embodiment, the height difference between the high protruding electrode 3b and the low protruding electrode 3a is about 50.
Although the difference in height is set to be larger than the variation amount of the solder paste 7 due to printing, if all the low protruding electrodes 3a arranged on the outermost periphery are joined to the solder paste 7, the height difference is set to the inside. The height of the bump electrode 3b is set higher than the variation amount of the solder paste 7. Therefore, even if the height of the solder paste 7 varies, they are all bonded. Further, as in this embodiment, the difference between the low protruding electrode 3a and the high protruding electrode 3b is set to the variation amount + α of the solder paste 7 because the variation in the height of the protruding electrode 3 when the protruding electrode 3 is formed. This is because the bonding state can be determined more reliably in consideration of the amount.

Further, even if the difference in height between the low protrusion electrodes 3a and the high protrusion electrodes 3b is smaller than the variation amount of the printing height of the solder paste 7, even a slight difference is generated, so that the low protrusions arranged on the outermost periphery are formed. The electrode 3a is more difficult to join than the other high protruding electrodes arranged inside. That is, if the variation in the printing height of the solder paste 7 occurs at the same probability in any place, unbonded defects are most likely to occur in many low protruding electrodes 3a on the outermost periphery. Therefore, the unbonded defects are concentrated on the low protruding electrodes 3a arranged on the outermost periphery. Therefore,
If no unbonded defect has occurred in the large number of low protruding electrodes 3a arranged on the outermost periphery, it can be determined that almost no unbonded defect has occurred in the high protruding electrode 3b arranged inside thereof. .

Although the case where the solder paste 7 is supplied as the bonding material by the printing method has been described here, the present invention is not limited to this, and the solder material may be supplied by the plating method. In this case, for example, when the solder plating height is set to 30 μm as a design value, the actual solder plating height varies within a range of ± 1 μm within one package. If the height difference from the inner high protruding electrode 3b is made larger than 2 μm,
As described above, it is possible to reliably prevent the occurrence of unbonded defects. In the current technology, the solder plating method has a limit of variation of 2 μm. Therefore, if the height difference between the low protruding electrode 3a and the high protruding electrode 3b is set to be larger than 2 μm,
It is possible to reliably prevent the occurrence of unbonded defects.

Embodiment 2 FIG. 3A to 3D are sectional views of a manufacturing process sequentially showing the steps of mounting a semiconductor device on a substrate according to the second embodiment of the present invention. In this figure, 8 is solder plating supplied to the electrode group of the board 5, and 8a is a plating height of about 27 μm as a designed value on the electrodes 6 arranged in the outermost row and row of the electrode group of the board 5. The low solder plating 8b is provided on the electrode 6 disposed inside the electrode 6 to which the low solder plating 8a is supplied. The plating height is about 3 μm higher than the low solder plating 8a as a design value and is high at about 30 μm. Solder plating.

The semiconductor device constructed as described above is mounted on the substrate 5 as follows. First, FIG.
As shown in (a), the solder plating 8 is supplied on the electrode 6 by a plating method, and the electrode 6 to which the solder plating 8 is supplied and the protruding electrode 3 are aligned so as to face each other. Next, as shown in FIG. 3 (b), the substrate 5 and the package 5 are packaged in this state on the substrate 5 until the low solder plating 8 a on the electrode 6 arranged on the outermost periphery of the substrate 5 contacts the protruding electrodes. By mounting the package main body 1 close to the main body 1 and heating the solder plating 8 to a temperature at which the solder plating 8 melts, for example, 200 ° C., and then cooling, the protruding electrodes 3 and the solder plating 8 are electrically connected and fixed. It

In the semiconductor device mounting method according to the second embodiment of the present invention described above, the size and height of the projecting electrodes 3 formed on the package body 1 are all designed to be the same. The difference from the first embodiment is that the height of the solder plating 8 supplied to the electrode 6 of the substrate 5 is changed, and the plating height on the electrode 6 on the outermost periphery is the plating on the electrode 6 arranged inside thereof. This is a point designed and formed to be lower than the height. That is, the solder plating 8a having a low solder plating height as a design value is about 27 μm, and the solder plating 8a having a high solder plating height 8b is high.
Are set to about 30 μm, respectively. However, in the actual plating process, the plating height is usually ± 1 μm.
Therefore, there is a difference of about 2 μm between the maximum height and the minimum height of solder plating. In consideration of this difference, the difference in plating height between the low solder plating 8a and the high solder plating 8b is determined.

That is, when the package body 1 is mounted on the substrate 5 and then heated, the solder is melted, and the protruding electrode 3 is pushed into the solder plating 8 by the mounting load of the package body 1. At this time, since the high solder plating 8b is in contact with the protruding electrode 3, wetting occurs. In the wetted portion, the high surface tension of the solder plating 8b acts to draw the package body 1 and the substrate 5 further, and as a result, the solder plating 8a having a low plating height and the protruding electrode 3 are separated from each other. Contact with them to cause wetting. Here, the solder plating 8a having a low height is
In order to make contact with the bump electrodes 3, the package body 1 and the substrate 5 are soldered with a low solder plating 8a and a high solder plating 8b.
The difference in the height of the solder plating from the above must be close to each other by about 3 μm or more.

Therefore, since the variation of the plating height of the solder plating 8 is 2 μm, if the projection electrode 3 arranged on the outermost periphery is completely joined to the solder plating 8, the projections arranged inside the projection electrode 3 are formed. It can be judged that the electrode 3 is definitely bonded. That is, the protruding electrodes 3 arranged on the outermost periphery
In order to prevent unbonded defects from occurring, the package body 1 is mounted on the substrate 5, and a simple optical inspection is performed to observe and evaluate only the bonded parts of the protruding electrodes 3 arranged on the outermost periphery. If it is confirmed that there is no unbonded defect in the bonded portion even in the protruding electrode 3 which is not observable from the outside and is arranged in a portion other than the outermost periphery. Furthermore, if it is confirmed by an electrical inspection that there is no short circuit defect, it can be determined that the state of the mounting joint is good.

In the second embodiment of the present invention, when the outermost protruding electrode 3 and the corresponding electrode 6 are used as monitor electrodes, the outermost protruding electrode 3 and the low solder plating 8a on the electrode 6 are used. Does not necessarily need to be in a good joined state, but may be in a state of being in contact. Even in this case, since the substrate 5 and the projecting electrode 3 are closer to each other than the variation of the solder plating, the electrode 6 on the inside is high. Solder plating 8b
No unbonded defect will occur in the bonded portion between the bump electrode 3 and the bump electrode 3.

Further, in the second embodiment, the difference in plating height between the low solder plating 8a and the high solder plating 8b is set to be larger than the variation of the solder plating. This is because the bonding state can be determined more reliably in consideration of the variation in the height in the forming process, and theoretically the same as the variation amount.

Further, even if the difference in the plating height between the low solder plating 8a and the high solder plating 8b is smaller than the variation amount of the plating, even a slight difference is generated, so that the solder plating 8a having the lowest outermost circumference is located inside thereof. It becomes more difficult to join than the high solder plating 8b arranged. In other words, if the variation in the height of the solder plating is caused by the same probability at any place, the unbonded defect between the solder plating 8a having the lowest outermost circumference and the protruding electrode 3 is stochastically most likely to occur. If there is no unbonded defect on the outermost peripheral side, it can be judged that no unbonded defect has occurred on the inner side as well.

Although the case where the solder as the bonding material is supplied by the plating method has been described here, in the case of supplying vapor deposition, sputtering, etc., although there is almost no variation in the bonding material to be supplied, the protrusion electrode 3 Since there is a possibility that unbonding failure may occur due to the height variation of the protruding electrodes in the forming process, the height of the outermost protruding electrodes 3 may be reduced as described in the first embodiment, or the unbonded defects may be reduced. The outermost electrode 6 as shown in the form 2
Embodiment 1 by reducing the height of the joining material of
The same effects as those shown in 2 and 2 are obtained.

Embodiment 3 4A and 4B are a side view and a top view showing a semiconductor device according to a third embodiment of the present invention. The difference between the semiconductor device according to the third embodiment of the present invention and the conventional semiconductor device is that when observed from the vertical direction with respect to the outer periphery of the package body 1 in the plane in which the protruding electrodes 3 are arranged, The protruding electrodes 3 are arranged so as to be displaced in a certain direction from the outer peripheral portion toward the inner peripheral portion so that part or all of the protruding electrodes 3 can be observed. Is.

The semiconductor device configured as described above is
It is mounted on the substrate 5 by the same method as that shown in the first embodiment. FIG. 5 is a side view showing an electrode joint portion when this semiconductor device is mounted on the substrate 5. A portion A indicated by a circle in the drawing is a joint portion in which a fillet is formed due to wetting between the protruding electrode 3 and the solder paste 7 on the substrate 5, and C is a good joint state, and C is the protruding electrode 3 and the solder paste 7. Indicates an incomplete joint where no fillet was formed without wetting.

By thus arranging the protruding electrodes 3 so as to be displaced in a constant direction from the outer peripheral portion toward the inner peripheral portion, the side surface of the protruding electrode 3 arranged on the inner peripheral side from the outside can be observed. The presence or absence of fillet formation can be confirmed by a simple optical appearance inspection such as image recognition and visual inspection, and an incomplete joint C, which was difficult to find by conventional electrical inspection, can be easily found. Improves reliability. Further, since the bonding state of the protruding electrodes arranged inside can be found by observing the outer circumference of the package body 1 from the vertical direction, the position of the camera used for image recognition can be fixed, and a simple inspection device can be used. It is possible to judge the quality of the joined state.

In the above-mentioned embodiment of the present invention, the solder is used as the bonding material, but the bonding material is not limited to this, and the conductive resin, the anisotropic conductive resin, and the adhesive containing metal filler are used. Any material having conductivity such as an agent and capable of fixing the semiconductor device on the substrate 5 may be used.

[0045]

In the semiconductor device according to the first aspect of the present invention, the height of the protruding electrodes arranged in the outermost row or column of the protruding electrode group is more than the height of the protruding electrodes arranged inside thereof. Since the semiconductor device is formed low, unbonded defects are concentrated on the outermost side when the semiconductor device is bonded to the base. Therefore, there is an effect that it is possible to provide a structure of a semiconductor device capable of judging the quality of the mounting joint between the semiconductor device and the base body by a simple optical inspection from the outside.

Further, in the semiconductor device according to claim 2 of the present invention, the height of the bump electrodes arranged in the outermost row or column of the bump electrode group is lower than the height of the bump electrodes arranged inside thereof. Since the difference in the height is formed to be larger than the variation amount of the height of the bonding material to be supplied, when the semiconductor device is bonded to the base body, even if the bonding material supplied to the electrodes varies, If there is no unbonded defect in the mounting joint of the outermost protruding electrode whose height is lower than the variation amount, unbonded defect is surely generated in the mounted joint of the protruding electrode arranged inside it. It can be determined that there is no. Therefore, if the mounting joint portion arranged on the outermost side is evaluated by an optical inspection, it is possible to determine the quality of the mounting joint portion between the semiconductor device and the base body.

In the semiconductor device according to the third aspect of the present invention, the amount of variation in the height of the bonding material supplied by the plating method is 2 μm in the present technology, so that the protruding electrode arranged on the outermost side and If the difference in height of the protruding electrodes arranged on the inner side is made larger than 2 μm, the bonding state of the protruding electrodes arranged on the outermost side is observed. It has the effect that it can be determined that it has not occurred.

In the method for mounting a semiconductor device according to a fourth aspect of the present invention, the height of the bonding material supplied onto the electrodes of the base is arranged inside the electrodes arranged on the outermost side of the electrode group. By making it lower than the electrode, the possibility of the most unbonded defect occurring at the outermost electrode increases, so if there is no unbonded defect at this location, then there should be no unbonded defect inside it. Becomes Therefore, it is possible to evaluate the mounting bonding state of the semiconductor device and the substrate by judging the quality of the bonding state of the outermost electrode by an optical inspection from the outside, and thus it is possible to suppress the inspection cost.

Furthermore, in the method for mounting a semiconductor device according to claim 5 of the present invention, the height of the bonding material on the outermost electrodes of the electrode group is set to be higher than the height of the bonding material on the electrodes inside thereof. Since it is formed to be lower than the amount of variation in height of the bonding material, if there is no unbonded defect in the outermost electrode, even if there is variation in the height of the bonding material, the unbonded defect in the inner electrode will be more reliable. It is possible to evaluate the mounting bonding state of the semiconductor device and the base by determining the bonding state of the outermost electrode by an optical inspection from the outside, which does not occur.

Further, in the method for mounting a semiconductor device according to claim 6 of the present invention, the bonding material is supplied onto the electrodes by a plating method. However, in the present technology, the variation amount is 2 μm, so the electrode group The difference between the height of the bonding material on the outermost electrode and the height of the bonding material on the inner electrode is 2μ
If it is made larger than m, there is an effect that the bonding state of the outermost electrode can be evaluated by an optical inspection from the outside to evaluate the mounting bonding state of the semiconductor device and the substrate.

According to a seventh aspect of the present invention, the semiconductor device is observed from the vertical direction with respect to the alignment direction of the projection electrodes arranged on the plane where the projection electrode group is arranged and on the outermost side of the projection electrode group. At this time, at least a part of each of the protruding electrodes arranged inside thereof is arranged so that it can be observed. Therefore, when this semiconductor device is mounted and bonded to the base, there is an effect that it is possible to provide a structure of the semiconductor device in which the bonding state can be easily evaluated by an optical inspection from the outside.

Further, in the method for mounting a semiconductor device according to claim 8 of the present invention, since the semiconductor device according to any one of claims 1 to 3 is mounted and bonded to a substrate, the inspection after mounting is performed as described above. In, there is an effect that the bonding state can be easily evaluated by an optical inspection from the outside.

Further, in the method for mounting a semiconductor device according to claim 9 of the present invention, since the semiconductor device according to claim 7 is mounted and bonded to the substrate, as described above, in the inspection after mounting, it is possible to perform optical inspection from the outside. This has the effect that the joining state can be easily evaluated by a physical inspection.

In the method for inspecting a semiconductor device mounting portion according to claim 10 of the present invention, the semiconductor device is mounted on a substrate by the method for mounting a semiconductor device according to any one of claims 4 to 6, 8 and 9. Later, electrical inspection was used to evaluate short-circuit defects, and unbonded defects were evaluated by performing optical inspection only on the electrode joints located on the outermost side of the electrode group. There is an effect that the cost can be shortened and the inspection cost can be suppressed.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a mounting step sectional view showing a step of mounting the semiconductor device according to the first embodiment of the present invention on a substrate.

FIG. 3 is a mounting step sectional view showing a step of mounting a semiconductor device on a base body according to a second embodiment of the present invention.

FIG. 4 is a sectional view and a top view showing a semiconductor device according to a third embodiment of the present invention.

FIG. 5 is a side view showing a mounting joint portion to a base of a semiconductor device according to a third embodiment of the present invention.

FIG. 6 is a perspective view showing a conventional semiconductor device.

FIG. 7 is a cross-sectional view showing a conventional semiconductor device.

FIG. 8 is a sectional view of a mounting process showing a conventional mounting process of a semiconductor device on a substrate.

FIG. 9 is a side view showing a mounting joint portion of a conventional semiconductor device to a base body.

[Explanation of symbols]

1 package body, 3 protruding electrodes, 3a low protruding electrodes, 3b high protruding electrodes, 5 substrates, 6 electrodes, 7 solder paste, 8 solder plating, 8a low solder plating, 8b high solder plating.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Teru Adachi 2-3-3 Marunouchi, Chiyoda-ku, Tokyo Sanryo Electric Co., Ltd.

Claims (10)

[Claims] 1. A semiconductor device having a projecting electrode group configured by arranging a plurality of projecting electrodes electrically connected to an electrode formed on a substrate through a bonding material in a row and a column direction, A semiconductor device, wherein the height of the protruding electrodes arranged in the outermost row or column of the protruding electrode group is lower than the height of the protruding electrodes arranged inside thereof. 2. A projection electrode group formed by arranging a plurality of projection electrodes electrically connected to each other through a bonding material supplied on an electrode formed on a substrate in the row and column directions. In the semiconductor device, the height of the protruding electrodes arranged in the outermost row or column of the protruding electrode group is lower than the height of the protruding electrodes arranged inside thereof, and the difference in height is supplied. The semiconductor device is characterized in that it is larger than the variation in height of the bonding material. 3. A projection electrode formed by arranging a plurality of projection electrodes electrically connected to a electrode formed on a substrate through a bonding material supplied by a plating method in row and column directions. In a semiconductor device having a group, the height of the protruding electrodes arranged in the outermost row or column of the protruding electrode group is lower than the height of the protruding electrodes arranged inside thereof, and the difference in height is A semiconductor device having a size larger than 2 μm. 4. A bonding material supplied onto the electrodes arranged in the outermost row or column of the electrode group of the substrate on which the electrode group formed by arranging a plurality of electrodes in the row and column directions is formed. A step of supplying a bonding material to the electrode group so that the height of the bonding material is lower than the height of the bonding material supplied on the electrode arranged inside the electrode, and the electrode of the substrate on which the bonding material is arranged. , The outermost row or column of the electrode group after alignment so that the bump electrodes of the semiconductor device having the bump electrode group formed by arranging a plurality of bump electrodes in the row and column directions face each other. The semiconductor device and the base are brought close to each other until the low-height bonding material on the electrode arranged in contact with the bump electrode contacts the electrode group on the base and the projection of the semiconductor device via the bonding material. A process of contacting the electrode group and joining the semiconductor device to the substrate. A method for mounting a semiconductor device, comprising: 5. The height of the bonding material supplied on the electrodes arranged in the outermost rows or columns of the electrode group of the base body and the height of the bonding material supplied on the electrodes arranged inside thereof. 5. The method for mounting a semiconductor device according to claim 4, wherein the bonding material is supplied so that the difference is larger than the variation amount of the height of the bonding material generated when the bonding material is supplied. 6. The bonding material is supplied onto the electrodes by a plating method, and the height of the bonding material supplied onto the electrodes arranged on the outermost row or column of the electrode group of the substrate and the height inside the bonding material are arranged inside the bonding material. 5. The method for mounting a semiconductor device according to claim 4, wherein the bonding material is supplied by a plating method so that the difference from the height of the bonding material supplied on the electrodes is larger than 2 μm. 7. A semiconductor device having a projecting electrode group formed by arranging a plurality of projecting electrodes electrically connected to electrodes formed on a substrate through a bonding material in row and column directions, When observing from the vertical direction with respect to the alignment direction of the protruding electrodes arranged on the outermost side of the protruding electrode group in the plane on which the protruding electrode group is arranged, all the protruding electrodes arranged inside the protruding electrode group A semiconductor device having a protruding electrode group in which the protruding electrodes are arranged so that at least a part of each can be observed. 8. A step of supplying a bonding material onto each of the electrodes of a base body on which an electrode group formed by arranging a plurality of electrodes in the row and column directions is formed, and the base body to which the bonding material is supplied. And the protrusion electrodes of the semiconductor device according to any one of claims 1 to 3 are aligned so as to face each other, and then the heights arranged in the outermost rows or columns of the protrusion electrode group. The semiconductor device and the base body are brought close to each other until the protruding electrode having a low contact angle is brought into contact with the bonding material, and the electrode group on the base body and the protruding electrode group of the semiconductor device are brought into contact with each other via the bonding material. And a step of joining the semiconductor device to each other. 9. A step of supplying a bonding material onto each of the electrodes of a base body on which an electrode group formed by arranging a plurality of electrodes in the row and column directions is formed, and the base body to which the bonding material is supplied. And the protruding electrodes of the semiconductor device according to claim 7 are aligned so as to face each other, and the protruding electrodes of low height arranged in the outermost row or column of the protruding electrode group are The semiconductor device and the base body are brought close to each other until they come into contact with the bonding material, and the electrode group on the base body and the protruding electrode group of the semiconductor device are brought into contact with each other via the bonding material to bond the semiconductor device to the base body. A method of mounting a semiconductor device, comprising: 10. A method for inspecting a semiconductor device mounting portion after the semiconductor device is mounted on a substrate by the method for mounting a semiconductor device according to any one of claims 4 to 6, 8 and 9, wherein a protruding electrode is used. The mounting part is evaluated by performing an electrical inspection of the bonding state with the electrodes and an optical inspection of the bonding state between the protruding electrode group and the protruding electrodes arranged on the outermost side of the electrode group and the electrode. Inspection method of semiconductor device mounting part.