JPH09181046A - Semiconductor manufacturing method and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the yield of treated samples by reducing the amount of deposits adhering to the inner surface of a vacuum treating vessel and suppressing them from peeling. SOLUTION: A semiconductor producing apparatus comprises a vacuum treating vessel 2 shut off from the outside to be capable of forming a vacuum atmosphere inside 2a. vacuum pump 4 for evacuating the vessel 2, means 6 for feeding a treating gas 5 such as boron trichloride in the inside 2a of the vessel 2, control means 7 for holding the vessel 2 at specified temp., and a magnetron 3 for generating a microwave 3a. Using the gas 5, a semiconductor wafer 1 is etched and vessel 2 is held at specified temp. during and standby by the control means 7.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technology for manufacturing a processing object such as etching in a vacuum processing container, and particularly to a deposit such as a reaction product deposited on the vacuum processing container. The present invention relates to a semiconductor manufacturing method and apparatus for reducing film peeling.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
The present invention was studied by the present inventors upon completion, and its outline is as follows.

A microwave etching apparatus is an example of a semiconductor manufacturing apparatus for processing a semiconductor wafer, which is an object to be processed, in a vacuum processing container made of quartz or the like.

This is to perform an etching process on a semiconductor wafer by supplying an inert gas into a vacuum processing container in which a vacuum atmosphere is formed and irradiating a microwave to generate plasma.

Here, in the microwave etching apparatus, the reaction product is deposited and adhered to the inner surface of the vacuum processing container by performing the etching process in the vacuum processing container.

Further, during the etching process (during discharge),
The temperature of the vacuum processing container rises, and when the etching process ends, the temperature drops.

Further, since the reaction products attached to the inner surface of the vacuum processing container must be removed, it is necessary to open the vacuum processing container to the atmosphere and clean it with a solvent such as alcohol or pure water.

As a result, the microwave etching apparatus must be stopped for a long time including the time of vacuum exhaustion after cleaning.

Regarding the microwave etching device, for example, Industrial Research Institute Co., Ltd., November 2, 1992.
Published on 0th, "Electronic Materials Separate Volume 1993, VLSI Manufacturing /
Test apparatus guidebook ", pages 121-125.

[0010]

However, in the microwave etching apparatus according to the above-mentioned technique, the deposit such as the reaction product deposited on the inner surface of the vacuum processing container receives a heat history and becomes a foreign matter dust source, which causes It peels off and becomes a foreign substance.

That is, the temperature of the vacuum processing container when the etching process is not performed is lowered, whereby the adhered matter is solidified and falls to become a foreign matter.

As a result, there is a problem that the foreign matter adheres to the semiconductor wafer to reduce the yield of the semiconductor wafer.

Further, in order to remove the deposits adhering to the inner surface of the vacuum processing container, it is necessary to clean the vacuum processing container to open to the atmosphere, which causes a problem that the down time of the microwave etching apparatus becomes long.

Further, since the temperature of the vacuum processing container changes, the etching rate during the etching process also changes, and stable and highly accurate processing cannot be performed.

An object of the present invention is to provide a semiconductor manufacturing method and apparatus for reducing the amount of deposits adhering to the inner surface of a vacuum processing container and suppressing film peeling of deposits to improve the yield of objects to be treated. Especially.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0017]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, the semiconductor manufacturing method of the present invention treats an object to be treated with a processing gas. The temperature of the vacuum processing container for treating the object is detected by a temperature detector, The temperature of the vacuum processing container is maintained at a predetermined temperature by heating or cooling the vacuum processing container based on the temperature value detected by the temperature detector.

Further, the semiconductor manufacturing apparatus of the present invention is for performing a process such as etching on an object to be processed using a process gas, and a vacuum processing container capable of being shielded from the outside and forming a vacuum atmosphere inside. A vacuum evacuation means for exhausting the inside of the vacuum processing container; a gas supply means for supplying the processing gas into the vacuum processing container; and a container temperature control means for maintaining the temperature of the vacuum processing container at a predetermined temperature. I have.

As a result, the temperature of the vacuum processing container can be maintained at the set predetermined temperature during processing or during standby (when processing is not performed).

Therefore, since the temperature of the vacuum processing container does not drop even during standby, it is possible to prevent the temperature of the vacuum processing container from fluctuating.

As a result, it is possible to suppress the peeling of the film, which is caused when the deposits on the inner surface of the vacuum processing container harden and fall, and to reduce the amount of foreign matter generated in the vacuum processing container.

Further, the semiconductor manufacturing apparatus of the present invention is for performing a process such as etching on an object to be processed using a process gas, and a vacuum processing container that is shielded from the outside and can form a vacuum atmosphere inside. Vacuum exhaust means for exhausting the inside of the vacuum processing container, and the processing gas toward the inner surface facing portion of the vacuum processing container facing the object to be processed and substantially along the inner surface of the vacuum processing container. And a high pressure gas supply means for strongly spraying.

The semiconductor manufacturing apparatus of the present invention is to perform a process such as etching on an object to be processed using a process gas, has a double wall composed of an inner wall and an outer wall, and forms a vacuum atmosphere inside. A possible vacuum processing container, a vacuum evacuation means for exhausting the inside of the vacuum processing container, and a gas supply means for supplying the processing gas to the inside of the vacuum processing container,
The carrier heated by the carrier gas heating means has carrier gas supply means for supplying a carrier gas to a gap formed by the inner wall and the outer wall and a carrier gas heating means for heating the carrier gas. By supplying gas to the gap, the temperature of the vacuum processing container is maintained at a predetermined temperature.

Further, the semiconductor manufacturing apparatus of the present invention is for performing processing such as etching on an object to be processed using a processing gas, has a double wall including an inner wall and an outer wall, and forms a vacuum atmosphere inside. A possible vacuum processing container, and gas supply means for supplying the processing gas to the inside of the vacuum processing container;
An inert gas supply means for supplying an inert gas to a gap formed by the inner wall and the outer wall, and a vacuum exhaust means for exhausting the inside of the vacuum processing container and the gap.
Plasma generating means for generating plasma in the gap portion, by supplying an inert gas to the gap portion in which a vacuum atmosphere is formed and generating plasma in the gap portion using the plasma generating means The temperature of the vacuum processing container is maintained at a predetermined temperature by the heat generated when plasma is generated.

[0026]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a structural conceptual view showing an example of an embodiment of the structure of a microwave etching apparatus which is a semiconductor manufacturing apparatus of the present invention.

The semiconductor manufacturing apparatus according to the present embodiment processes a semiconductor wafer 1 which is an object to be processed and which is formed of silicon or the like in an inside 2a of a vacuum processing container (also called bell jar) 2 and an example thereof is shown. As an example, a microwave etching apparatus for generating plasma 9 by using the microwave 3a and etching the semiconductor wafer 1 will be described.

The structure of the microwave etching apparatus will be described. A vacuum processing container 2 that is shielded from the outside 8 and can form a vacuum atmosphere in the inside 2a, and the vacuum processing container 2.
Inside the vacuum processing container 2 and a vacuum pump 4 which is a vacuum exhausting means for exhausting the inside 2a of the chamber.
gas supply means 6 for supplying a processing gas (also referred to as a process gas) 5 such as l ₃ ), a container temperature control means 7 for keeping the temperature of the vacuum processing container 2 at a predetermined temperature, and a plasma generation means for oscillating the microwave 3a. The semiconductor wafer 1 is etched by using the processing gas 5 and the temperature of the vacuum processing container 2 during processing and standby is maintained at a predetermined temperature by the container temperature control means 7. is there.

Here, the container temperature control means 7 is a contact type temperature sensor 7a which is a temperature detector for detecting the temperature of the vacuum processing container 2, and a cooling gas supply which is a container cooling means for cooling the vacuum processing container 2. An output signal to the cooling gas supplier 7b or the heater 7c based on the temperature value of the vacuum processing container 2 detected by the contact type temperature sensor 7a and the heater 7c which is a container heating means for heating the vacuum processing container 2 The controller 7d, which is a control unit for sending the output signal, and a changeover switch 7e for changing the transmission destination of the output signal from the controller 7d, and the contact temperature sensor 7a and the controller 7d are connected by a fiber cable 7f.

The outside 8 of the vacuum processing container 2 is covered with a waveguide 3b for guiding the microwave 3a, and the magnetron 3 is attached to the waveguide 3b.

Further, an electromagnet 10 which is a ring-shaped coil for adjusting the generation position of the plasma 9 is installed on the outside 8 of the vacuum processing container 2 covered by the waveguide 3b, and a heater 7c is attached to the electromagnet 10. ing.

In addition, an electrostatic adsorption type electrode 11 which is a sample table and an electrode for supporting the semiconductor wafer 1 at the time of etching processing is installed in the inside 2a of the vacuum processing container 2, and the electrostatic adsorption type electrode 11 has A high frequency power source 12 is connected.

The vacuum processing container 2 is made of quartz or the like, the vacuum processing container 2 is provided with a gas inlet 2b and a vacuum exhaust port 2c, and the gas supply means 6 is provided via the gas inlet 2b. The vacuum pump 4 is connected via the vacuum exhaust port 2c.

Here, the microwave etching apparatus according to the present embodiment supplies the processing gas 5 as the process gas to the semiconductor wafer 1 adsorbed on the electrostatic adsorption type electrode 11, and the high frequency power source 12 generates a high frequency wave. The plasma 9 is generated by the application and the excitation of the microwave 3a by the magnetron 3.
Is generated and the semiconductor wafer 1 is etched.

Further, the vacuum processing container 2 is a microwave 3a.
Electrostatic adsorption type electrode 1
Reference numeral 1 is an electrode that supports the semiconductor wafer 1 by electrostatic attraction.

The electromagnet 10 improves the ionization efficiency by applying a magnetic field to the plasma 9, and the interior 2a of the vacuum processing container 2 is adjusted according to the magnitude of the applied current.
Is for adjusting the generation position of the plasma 9, and
The vacuum exhaust port 2c is for exhausting the residual gas containing the reaction product 13 which is the deposit generated during the etching process, and the gas inlet port 2b is for discharging the process gas 5 when the plasma 9 is generated. It is a leading introduction.

The high frequency power source 12 is a power source used for exciting plasma discharge.

Furthermore, the three contact type temperature sensors 7a attached to the vacuum processing container 2 detect (measure) the temperature of the vacuum processing container 2 and control the temperature value of the vacuum processing container 2 via the fiber cable 7f. It is sent to 7d.

The number of the contact-type temperature sensors 7a is not limited to three, and may be one or plural other than three.
Further, although the fiber cable 7f is for speedily transferring the data of the temperature value, other connection members may be used.

The controller 7d operates the changeover switch 7e based on the temperature value to send an output signal to the cooling gas supplier 7b or the heater 7c installed in the vicinity of the vacuum processing container 2.

That is, when cooling the vacuum processing container 2, the cooling gas supply device 7b blows a cooling gas 14 such as nitrogen gas or dry air onto the vacuum processing container 2,
Further, when heating the vacuum processing container 2, a heater 7c is used.
The vacuum processing container 2 is heated by.

As a result, the temperature of the vacuum processing container 2 can be maintained at a predetermined temperature by the container temperature control means 7.

Next, a semiconductor manufacturing method of this embodiment, that is, an etching method will be described.

First, while supplying the processing gas 5 such as boron trichloride to the inside 2a of the vacuum processing container 2 by the gas supply means 6, the inside 2a of the vacuum processing container 2 is evacuated by the vacuum pump 4 to a predetermined vacuum. Decompress every time.

Then, the microwave 3 of about 2.45 GHz is supplied by the magnetron 3 via the waveguide 3b.
The vacuum processing container 2 is irradiated with a from the outside 8 to generate plasma 9 in the inside 2a of the vacuum processing container 2.

Further, a high frequency voltage is applied by the high frequency power source 12 to the electrostatic attraction type electrode 11 which is also the sample stage.

As a result, the reactive element ions in the plasma 9 enter the semiconductor wafer 1 and the semiconductor wafer 1 can be etched.

Here, when the etching process is performed, the reaction product 13 adheres to the inner surface 2d of the vacuum processing container 2. Furthermore, if the temperature of the vacuum processing container 2 fluctuates (especially decreases) after the etching process, the reaction product 13 falls and becomes a foreign substance. Therefore, in order to prevent film peeling of the reaction product 13, Always keep the temperature at the specified temperature.

Regarding the temperature of the vacuum processing container 2,
A predetermined temperature to be maintained is set in advance, and the temperature is constantly detected by the contact type temperature sensor 7a which is a constituent member of the container temperature control means 7 (during the etching process and the standby state where the etching process is not performed) ( Please monitor).

Further, when the temperature value detected by the contact temperature sensor 7a is sent to the controller 7d and the temperature of the vacuum processing container 2 deviates from the predetermined temperature (out of the set predetermined temperature range), The changeover switch 7e is changed over to operate the cooling gas supplier 7b or the heater 7c.

Thus, when the vacuum processing container 2 is cooled, the cooling gas supplier 7b blows the cooling gas 14 onto the vacuum processing container 2, and when the vacuum processing container 2 is heated, the vacuum is supplied by the heater 7c. The processing container 2 is heated.

As a result, the temperature of the vacuum processing container 2 can be maintained at a preset temperature by the container temperature control means 7.

According to the semiconductor manufacturing method and apparatus of the present embodiment, the following operational effects can be obtained.

That is, by having the container temperature control means 7 for keeping the temperature of the vacuum processing container 2 at a predetermined temperature, the temperature of the vacuum processing container 2 can be set even during the etching process or during standby (when the process is not performed). It can be maintained at a predetermined temperature.

As a result, the temperature of the vacuum processing container 2 does not decrease even during standby, so the vacuum processing container 2
It is possible to prevent fluctuations in temperature.

Therefore, the reaction product 13 (adhered matter) adhering to the inner surface 2d of the vacuum processing container 2 can be prevented from peeling off the film, and the amount of foreign matter generated in the vacuum processing container 2 can be reduced. be able to.

As a result, foreign substances such as the reaction products 13 can be prevented from adhering to the semiconductor wafer 1, so that the yield of the semiconductor wafer 1 can be improved.

Furthermore, since the temperature of the vacuum processing container 2 can be maintained at a predetermined temperature, the reaction product 13 is less likely to adhere, and thus the amount of the reaction product 13 adhered can be reduced.

As a result, the amount of foreign matter generated in the vacuum processing container 2 can be reduced.

Further, the film peeling of the reaction product 13 adhering to the inner surface 2d of the vacuum processing container 2 can be suppressed, so that the amount of foreign matter generated in the vacuum processing container 2 can be reduced. It is possible to reduce the frequency (number of times) of cleaning the processing container 2 to the atmosphere.

As a result, downtime (time when the semiconductor manufacturing apparatus is not in operation) can be reduced, the operating time of the apparatus can be increased, and the throughput of the etching process of the semiconductor wafer 1 can be improved.

Further, by preventing the temperature of the vacuum processing container 2 from fluctuating, the atmosphere in the vacuum processing container 2 can be stabilized, and the processing speed during the etching processing can be stabilized and the processing can be made uniform. You can

As a result, the processing performance of the etching process can be improved, and the semiconductor wafer 1 can be stably and highly accurately processed (etched).

Although the invention made by the present inventor has been specifically described based on the embodiments of the invention, the invention is not limited to the embodiments of the invention, and does not depart from the gist of the invention. It goes without saying that various changes can be made with.

For example, in the semiconductor manufacturing apparatus (microwave etching apparatus) according to the above-mentioned embodiment, the temperature of the vacuum processing container is kept at a predetermined temperature by using a container temperature control means composed of a contact type temperature sensor or the like. But
As in the semiconductor manufacturing apparatus (microwave etching apparatus) of another embodiment shown in FIGS. 2 and 3, the vacuum processing container 2 may be heated by another method.

The structure of the microwave etching apparatus shown in FIG. 2 will now be described. A vacuum processing container 2 having a double wall composed of an inner wall 2e and an outer wall 2f and capable of forming a vacuum atmosphere in the interior 2a, and a vacuum A vacuum pump 4, which is a vacuum exhaust unit that exhausts the interior 2a of the processing container 2, a gas supply unit 6 that supplies a processing gas 5 such as boron trichloride to the interior 2a of the vacuum processing container 2, an inner wall 2e, and an outer wall 2f. A carrier gas 1 such as nitrogen gas is provided in a gap 2g formed by
5, a carrier gas supply means 16 for supplying the carrier gas 15, a carrier gas heating means 17 for heating the carrier gas 15, and a magnetron 3 which is a plasma generation means for oscillating the microwave 3a.

That is, the temperature of the vacuum processing container 2 is kept at a predetermined temperature by supplying the carrier gas 15 heated by the carrier gas heating means 17 to the gap 2g.

The carrier gas 15 may be heated by the carrier gas heating means 17 at any time before it is supplied to the gap 2g.

The microwave etching apparatus shown in FIG. 3 has a double wall composed of an inner wall 2e and an outer wall 2f, and a vacuum processing container 2 capable of forming a vacuum atmosphere in the interior 2a,
A gas supply means 6 for supplying a processing gas 5 to the inside 2a of the vacuum processing container 2 and an inert gas supply means for supplying an inert gas 18 such as argon gas to a gap 2g formed by the inner wall 2e and the outer wall 2f. 19 and the inside 2 of the vacuum processing container 2
The vacuum pump 4 is a vacuum evacuation unit that exhausts a and the gap 2g, and the magnetron 3 is a plasma generation unit that generates plasma 9 in the gap 2g.

That is, the gap 2 is formed by the vacuum pump 4.
A vacuum atmosphere is formed in g, and the inert gas supply means 19 supplies the inert gas 18 to the gap 2g in which the vacuum atmosphere is formed. Further, by irradiating the microwave 3a with the magnetron 3 to generate the plasma 9 in the gap 2g, the temperature of the vacuum processing container 2 is maintained at a predetermined temperature by the heat when the plasma is generated.

The vacuum evacuation of the interior 2a of the vacuum processing container 2 and the evacuation of the gap 2g are not the same single vacuum pump 4, but two vacuum pumps connected to the interior 2a and the gap 2g separately. You may perform by the vacuum pump 4 (vacuum evacuation means).

As a result, the microwave etching apparatus shown in FIGS. 2 and 3 can also obtain the same effects as the microwave etching apparatus described in the above embodiment.

The microwave etching apparatus shown in FIGS. 1, 2 and 3 is intended to prevent the film peeling off of the deposit by keeping the temperature of the vacuum processing container 2 at a predetermined temperature. As in the semiconductor manufacturing apparatus (microwave etching apparatus) shown in FIG. 5, the adhesion of the reaction product 13, which is the adhered material, to the inner surface 2d of the vacuum processing container 2 may be reduced.

Now, the structure of the microwave etching apparatus shown in FIG. 4 will be described. A vacuum processing container 2 that is shielded from the outside 8 and can form a vacuum atmosphere in the inside 2a,
A vacuum pump 4, which is a vacuum exhaust unit that exhausts the inside 2a of the vacuum processing container 2, and the semiconductor wafer 1 of the vacuum processing container 2.
The high pressure gas supply means 20 strongly blows the processing gas 5 such as boron trichloride toward the inner surface facing portion (ceiling portion) 2h facing the inner surface 2h and substantially along the inner surface 2d of the vacuum processing container 2.

That is, the processing gas 5 is blown by the high-pressure gas supply means 20 toward the inner surface facing portion 2h, which is the ceiling of the vacuum processing container 2, at a high pressure, so that the processing gas 5 is supplied to the inner surface 2d of the vacuum processing container 2. A film can be formed.

As a result, even if the deposit such as the reaction product 13 is scattered toward the inner surface 2d of the vacuum processing container 2, the deposit of the reaction product 13 can be prevented by the gas film.

As a result, the amount of the reaction product 13 (adhered matter) adhering to the inner surface 2d of the vacuum processing container 2 can be reduced.

The microwave etching apparatus shown in FIG. 5 has a vacuum processing container 2 having a double wall composed of an inner wall 2e and an outer wall 2f, and a plurality of gas outlets 2i provided in the inner wall 2e, and a vacuum processing chamber 2. A vacuum pump 4, which is a vacuum exhaust unit that exhausts the inside 2a of the processing container 2, and a processing gas 5 are supplied to a gap 2g formed between the inner wall 2e and the outer wall 2f and through a gas outlet 2i. It comprises a gas supply means 6 for supplying a processing gas 5 to the inside 2a of the vacuum processing container 2.

That is, when the processing gas 5 is supplied to the inside 2a of the vacuum processing container 2 by the gas supply means 6, first, the processing gas 5 is supplied to the gap 2g, and further, a plurality of gas outlets provided on the inner wall 2e. Vacuum processing container 2 via 2i
The processing gas 5 is supplied to the inside 2a of the.

As a result, even if the deposit such as the reaction product 13 scatters toward the inner surface 2d of the vacuum processing container 2, the deposit is repelled by the processing gas 5 jetted in a shower from the gas outlet 2i. be able to.

As a result, it is possible to prevent the reaction product 13 from adhering to the inner surface 2d of the vacuum processing container 2.

Although the microwave etching apparatus shown in FIGS. 2 to 5 does not have the container temperature control means 7 (see FIG. 1), the microwave etching apparatus shown in FIGS. Alternatively, the container temperature control means 7 may be provided.

That is, the microwave etching apparatus shown in FIGS. 2 to 5 is provided with the container temperature control means 7 shown in FIG. 1, and the container temperature control means 7 (see FIG. 1) is provided in the vacuum processing container 2. A contact-type temperature sensor 7a which is a temperature detector for detecting the temperature, a cooling gas supplier 7b which is a container cooling means for cooling the vacuum processing container 2, and a heater 7c which is a container heating means for heating the vacuum processing container 2. And a controller 7d that is a control unit that sends an output signal to the cooling gas supplier 7b or the heater 7c based on the temperature value of the vacuum processing container 2 detected by the contact temperature sensor 7a.

Even in this case, needless to say, the same effect as that of the microwave etching apparatus shown in FIG. 1 can be obtained.

In the semiconductor manufacturing apparatus (microwave etching apparatus) shown in FIGS. 1 to 5, the case where the object to be processed is a semiconductor wafer has been described. However, the object to be processed is not a semiconductor wafer. It may be.

Further, the plasma generating means in the semiconductor manufacturing apparatus is a magnetron, but the plasma generating means may be a needle electrode provided inside the vacuum processing container, or the like. A high voltage may be applied to generate plasma.

Further, the temperature detector in the container temperature control means of the semiconductor manufacturing apparatus may be a thermocouple or the like as long as it is in contact with the vacuum processing container to detect (measure) the temperature of the vacuum processing container. Good.

As for the container cooling means or the container heating means in the container temperature control means, other cooling gas such as helium gas other than nitrogen gas or dry air, as long as it can cool or heat the vacuum processing container, Alternatively, other heating means such as an infrared lamp other than the heater may be used.

Further, the processing gas used in the semiconductor manufacturing apparatus may be a processing gas other than boron trichloride, and a processing gas suitable for processing (processing) can be used.

Further, the vacuum processing container of the semiconductor manufacturing apparatus may be made of ceramic other than quartz.

Further, the semiconductor manufacturing apparatus is not limited to the microwave etching apparatus, but may be another etching apparatus, and if the object to be processed is processed by using the vacuum processing container, CVD ( Chemical Vapor Depositio
n) A device or a sputtering device may be used.

In this case, it goes without saying that the process performed on the object to be processed such as a semiconductor wafer is a film forming process.

[0094]

Advantageous effects obtained by typical ones of the inventions disclosed by the present application will be briefly described as follows.
It is as follows.

(1). By providing the container temperature control means for maintaining the temperature of the vacuum processing container at a predetermined temperature, the temperature of the vacuum processing container can be maintained at the set predetermined temperature during processing or during standby. As a result, it is possible to prevent the temperature of the vacuum processing container from fluctuating, so that it is possible to prevent film peeling that deposits and drops on the inner surface of the vacuum processing container and reduces the amount of foreign matter generated in the vacuum processing container. can do. As a result, it is possible to reduce the adhesion of foreign matter to the object to be processed, so that the yield of the object to be processed can be improved.

(2). Since the temperature of the vacuum processing container can be maintained at a predetermined temperature, it becomes difficult for adhered substances to adhere, and the amount of adhered substances can be reduced. Thereby, the amount of foreign matter generated in the vacuum processing container can be reduced.

(3). It is possible to reduce the amount of foreign matter generated in the vacuum processing container because it is possible to suppress the peeling of the film of the deposits that have adhered to the inner surface of the vacuum processing container, which reduces the frequency of vacuum opening cleaning of the vacuum processing container. can do. As a result, the downtime of the semiconductor manufacturing apparatus can be reduced, the operating time of the apparatus can be increased, and the processing throughput of the object to be processed can be improved.

(4). By preventing the temperature of the vacuum processing container from fluctuating, the atmosphere in the vacuum processing container can be stabilized and the processing speed during processing can be stabilized and the processing can be made uniform. As a result, the processing performance can be improved, and stable and highly accurate processing can be performed on the object to be processed.

(5). Since the semiconductor manufacturing apparatus has a high-pressure gas supply unit that strongly blows the processing gas toward the inner surface facing portion which is the ceiling of the vacuum processing container and substantially along the inner surface of the vacuum processing container, the inner surface of the vacuum processing container is A gas film can be formed by the processing gas. As a result, even if the adhered material is scattered toward the inner surface of the vacuum processing container, the adherence of the adhered material can be prevented by the gas film,
As a result, it is possible to reduce the amount of deposits attached to the inner surface of the vacuum processing container.

[Brief description of the drawings]

FIG. 1 is a structural conceptual diagram showing an example of an embodiment of a structure of a microwave etching apparatus which is a semiconductor manufacturing apparatus of the present invention.

FIG. 2 is a structural conceptual diagram showing an example of a structure of a semiconductor manufacturing apparatus (microwave etching apparatus) according to another embodiment of the present invention.

FIG. 3 is a structural conceptual diagram showing an example of the structure of a semiconductor manufacturing apparatus (microwave etching apparatus) according to another embodiment of the present invention.

FIG. 4 is a structural conceptual diagram showing an example of a structure of a semiconductor manufacturing apparatus (microwave etching apparatus) according to another embodiment of the present invention.

FIG. 5 is a structural conceptual diagram showing an example of the structure of a semiconductor manufacturing apparatus (microwave etching apparatus) according to another embodiment of the present invention.

[Description of Reference Signs] 1 semiconductor wafer (object to be processed) 2 vacuum processing container 2a inside 2b gas inlet 2c vacuum exhaust port 2d inner surface 2e inner wall 2f outer wall 2g gap 2h inner surface facing portion 2i gas outlet 3 magnetron (plasma generating means) ) 3a microwave 3b waveguide 4 vacuum pump (vacuum exhaust means) 5 processing gas 6 gas supply means 7 container temperature control means 7a contact temperature sensor (temperature detector) 7b cooling gas supply device (container cooling means) 7c Heater (container heating means) 7d Controller (control unit) 7e Changeover switch 7f Fiber cable 8 External 9 Plasma 10 Electromagnet 11 Electrostatic adsorption type electrode 12 High frequency power supply 13 Reaction product (adhered matter) 14 Cooling gas 15 Carrier gas 16 Carrier gas Supplying means 17 Carrier gas heating means 18 Inert gas 19 Inert gas supply means 20 High pressure gas supply means

Continuation of the front page (51) Int.Cl. ⁶ Identification number Office reference number FI Technical display location C23F 4/00 C23F 4/00 A H01L 21/205 H01L 21/205 21/302 B

Claims (8)

[Claims] 1. A semiconductor manufacturing method for treating an object to be treated with a processing gas, wherein a temperature of a vacuum processing container for treating the object is detected by a temperature detector, and the temperature detector detects the temperature. A method for manufacturing a semiconductor, characterized in that the temperature of the vacuum processing container is maintained at a predetermined temperature by heating or cooling the vacuum processing container based on the temperature value. 2. A semiconductor manufacturing apparatus for performing processing such as etching on an object to be processed by using a processing gas, the vacuum processing container being shielded from the outside and capable of forming a vacuum atmosphere inside the vacuum processing container. And a gas supply means for supplying the processing gas into the vacuum processing container, and a container temperature control means for maintaining the temperature of the vacuum processing container at a predetermined temperature. Semiconductor manufacturing equipment. 3. The semiconductor manufacturing apparatus according to claim 2, wherein the container temperature control means includes a temperature detector that detects a temperature of the vacuum processing container, and a container cooling means that cools the vacuum processing container. It has a container heating means for heating the vacuum processing container, and a controller for sending an output signal to the container cooling means or the container heating means based on the temperature value of the vacuum processing container detected by the temperature detector. Characteristic semiconductor manufacturing equipment. 4. A semiconductor manufacturing apparatus for performing processing such as etching on an object to be processed by using a processing gas, the vacuum processing container being shielded from the outside and capable of forming a vacuum atmosphere inside the vacuum processing container. And a high pressure for strongly blowing the processing gas toward the inner surface facing portion of the vacuum processing container facing the object to be processed, and substantially along the inner surface of the vacuum processing container. A semiconductor manufacturing apparatus comprising a gas supply unit. 5. A semiconductor manufacturing apparatus for performing a process such as etching on an object to be processed using a process gas, comprising a double wall composed of an inner wall and an outer wall, wherein the inner wall has a plurality of gas outlets. A vacuum processing container provided, a vacuum evacuation means for exhausting the inside of the vacuum processing container, supplying the processing gas to a gap formed between the inner wall and the outer wall, and the gas outlet A semiconductor manufacturing apparatus, comprising: a gas supply unit configured to supply the processing gas to the inside of the vacuum processing container via a gas. 6. A semiconductor manufacturing apparatus for performing processing such as etching on an object to be processed using a processing gas, the vacuum processing comprising a double wall including an inner wall and an outer wall and capable of forming a vacuum atmosphere inside. A container; a vacuum evacuation means for exhausting the inside of the vacuum processing container; a gas supply means for supplying the processing gas into the vacuum processing container; and a carrier in a gap formed by the inner wall and the outer wall. A carrier gas supply unit that supplies gas, and a carrier gas heating unit that heats the carrier gas, and the vacuum processing by supplying the carrier gas heated by the carrier gas heating unit to the gap portion. A semiconductor manufacturing apparatus, characterized in that the temperature of a container is maintained at a predetermined temperature. 7. A semiconductor manufacturing apparatus for performing processing such as etching on an object to be processed using a processing gas, the vacuum processing comprising a double wall including an inner wall and an outer wall and capable of forming a vacuum atmosphere inside. A container; a gas supply means for supplying the processing gas into the vacuum processing container; an inert gas supply means for supplying an inert gas to a gap formed by the inner wall and the outer wall; and the vacuum processing. A vacuum evacuation means for evacuating the inside of the container and the gap portion, and a plasma generation means for generating plasma in the gap portion; and supplying an inert gas to the gap portion in which a vacuum atmosphere is formed, A semiconductor manufacturing apparatus characterized in that the temperature of the vacuum processing container is maintained at a predetermined temperature by heat generated when plasma is generated by generating plasma in the gap portion using the plasma generating means. Place. 8. The semiconductor manufacturing apparatus according to claim 4, 5, 6 or 7, further comprising: container temperature control means for maintaining the temperature of the vacuum processing container at a predetermined temperature, wherein the container temperature control means comprises: Temperature detector for detecting the temperature of the vacuum processing container, container cooling means for cooling the vacuum processing container, container heating means for heating the vacuum processing container, and temperature of the vacuum processing container detected by the temperature detector A semiconductor manufacturing apparatus comprising: a control unit that sends an output signal to the container cooling unit or the container heating unit based on a value.